DE112014003849T5 - Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben - Google Patents
Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben Download PDFInfo
- Publication number
- DE112014003849T5 DE112014003849T5 DE112014003849.0T DE112014003849T DE112014003849T5 DE 112014003849 T5 DE112014003849 T5 DE 112014003849T5 DE 112014003849 T DE112014003849 T DE 112014003849T DE 112014003849 T5 DE112014003849 T5 DE 112014003849T5
- Authority
- DE
- Germany
- Prior art keywords
- layer
- light
- pattern
- phase shift
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-171766 | 2013-08-21 | ||
JP2013171766 | 2013-08-21 | ||
JP2014-070305 | 2014-03-28 | ||
JP2014070305 | 2014-03-28 | ||
PCT/JP2014/071886 WO2015025922A1 (ja) | 2013-08-21 | 2014-08-21 | マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112014003849T5 true DE112014003849T5 (de) | 2016-05-12 |
Family
ID=52483693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112014003849.0T Pending DE112014003849T5 (de) | 2013-08-21 | 2014-08-21 | Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben |
Country Status (7)
Country | Link |
---|---|
US (1) | US9874808B2 (zh) |
JP (3) | JP2015194673A (zh) |
KR (2) | KR102251087B1 (zh) |
CN (2) | CN105452956B (zh) |
DE (1) | DE112014003849T5 (zh) |
TW (1) | TWI545390B (zh) |
WO (1) | WO2015025922A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3086180A1 (en) * | 2015-03-31 | 2016-10-26 | Shin-Etsu Chemical Co., Ltd. | Halftone phase shift mask blank, halftone phase shift mask, and pattern exposure method |
DE112015001717B4 (de) | 2013-08-20 | 2024-06-13 | Dai Nippon Printing Co., Ltd. | Maskenrohling, Phasenverschiebungsmaske und Verfahren zur Herstellung derselben |
Families Citing this family (20)
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JP6551585B2 (ja) * | 2014-08-04 | 2019-07-31 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク及びその製造方法 |
JP2016035559A (ja) * | 2014-08-04 | 2016-03-17 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク及びその製造方法 |
US10551733B2 (en) | 2015-03-24 | 2020-02-04 | Hoya Corporation | Mask blanks, phase shift mask, and method for manufacturing semiconductor device |
JP6477159B2 (ja) * | 2015-03-31 | 2019-03-06 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランクス及びハーフトーン位相シフトマスクブランクスの製造方法 |
JP6418035B2 (ja) | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | 位相シフトマスクブランクス及び位相シフトマスク |
JP6341129B2 (ja) * | 2015-03-31 | 2018-06-13 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク |
JP6058757B1 (ja) * | 2015-07-15 | 2017-01-11 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
JP6346137B2 (ja) * | 2015-09-30 | 2018-06-20 | 株式会社ニューギン | 遊技機 |
DE102016203094B4 (de) * | 2016-02-26 | 2022-02-10 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske |
JP6297766B1 (ja) * | 2016-08-26 | 2018-03-20 | Hoya株式会社 | マスクブランク、転写用マスク及び半導体デバイスの製造方法 |
JP6677139B2 (ja) * | 2016-09-28 | 2020-04-08 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランクの製造方法 |
JP6432636B2 (ja) * | 2017-04-03 | 2018-12-05 | 凸版印刷株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
TWI659262B (zh) * | 2017-08-07 | 2019-05-11 | 日商Hoya股份有限公司 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
TWI639884B (zh) * | 2017-11-23 | 2018-11-01 | Powerchip Technology Corporation | 相移式光罩及其製作方法 |
CN111742259B (zh) * | 2018-02-27 | 2023-05-02 | Hoya株式会社 | 掩模坯料、相移掩模及半导体器件的制造方法 |
TWI753152B (zh) * | 2018-04-12 | 2022-01-21 | 聯華電子股份有限公司 | 光罩以及形成圖案的方法 |
JP6579219B2 (ja) * | 2018-05-07 | 2019-09-25 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク |
JP7179543B2 (ja) * | 2018-09-12 | 2022-11-29 | Hoya株式会社 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
CN111367142A (zh) * | 2018-12-26 | 2020-07-03 | 聚灿光电科技(宿迁)有限公司 | 一种包含不同透光性的新型光学掩膜版 |
WO2020166475A1 (ja) * | 2019-02-13 | 2020-08-20 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
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JPH0815851A (ja) | 1994-06-24 | 1996-01-19 | Sony Corp | ハーフトーン方式位相シフトマスク及びレジスト露光方法 |
JP3312708B2 (ja) * | 1994-09-16 | 2002-08-12 | 株式会社東芝 | 位相シフトマスクの欠陥修正方法 |
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2014
- 2014-08-21 KR KR1020167003588A patent/KR102251087B1/ko active Application Filing
- 2014-08-21 JP JP2014168321A patent/JP2015194673A/ja active Pending
- 2014-08-21 KR KR1020217013518A patent/KR102380131B1/ko active IP Right Grant
- 2014-08-21 CN CN201480045458.7A patent/CN105452956B/zh active Active
- 2014-08-21 DE DE112014003849.0T patent/DE112014003849T5/de active Pending
- 2014-08-21 US US14/912,831 patent/US9874808B2/en active Active
- 2014-08-21 TW TW103128943A patent/TWI545390B/zh active
- 2014-08-21 WO PCT/JP2014/071886 patent/WO2015025922A1/ja active Application Filing
- 2014-08-21 CN CN202010891721.1A patent/CN111913344A/zh active Pending
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112015001717B4 (de) | 2013-08-20 | 2024-06-13 | Dai Nippon Printing Co., Ltd. | Maskenrohling, Phasenverschiebungsmaske und Verfahren zur Herstellung derselben |
EP3086180A1 (en) * | 2015-03-31 | 2016-10-26 | Shin-Etsu Chemical Co., Ltd. | Halftone phase shift mask blank, halftone phase shift mask, and pattern exposure method |
Also Published As
Publication number | Publication date |
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JP6432444B2 (ja) | 2018-12-05 |
KR20160044466A (ko) | 2016-04-25 |
US20160195803A1 (en) | 2016-07-07 |
TWI545390B (zh) | 2016-08-11 |
US9874808B2 (en) | 2018-01-23 |
KR102251087B1 (ko) | 2021-05-14 |
KR102380131B1 (ko) | 2022-03-30 |
CN111913344A (zh) | 2020-11-10 |
WO2015025922A1 (ja) | 2015-02-26 |
JP2015212826A (ja) | 2015-11-26 |
TW201514609A (zh) | 2015-04-16 |
KR20210054599A (ko) | 2021-05-13 |
CN105452956A (zh) | 2016-03-30 |
JP2015194673A (ja) | 2015-11-05 |
JP2015194758A (ja) | 2015-11-05 |
CN105452956B (zh) | 2020-09-11 |
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