DE112014003849T5 - Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben - Google Patents

Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben Download PDF

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Publication number
DE112014003849T5
DE112014003849T5 DE112014003849.0T DE112014003849T DE112014003849T5 DE 112014003849 T5 DE112014003849 T5 DE 112014003849T5 DE 112014003849 T DE112014003849 T DE 112014003849T DE 112014003849 T5 DE112014003849 T5 DE 112014003849T5
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DE
Germany
Prior art keywords
layer
light
pattern
phase shift
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112014003849.0T
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German (de)
English (en)
Inventor
Takashi Adachi
Youichi Miura
Hideyoshi Takamizawa
Hayano Katsuya
Youhei Ohkawa
Hiroshi Watanabe
Ayako Tani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of DE112014003849T5 publication Critical patent/DE112014003849T5/de
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)
DE112014003849.0T 2013-08-21 2014-08-21 Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben Pending DE112014003849T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013171766 2013-08-21
JP2013-171766 2013-08-21
JP2014070305 2014-03-28
JP2014-070305 2014-03-28
PCT/JP2014/071886 WO2015025922A1 (ja) 2013-08-21 2014-08-21 マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法

Publications (1)

Publication Number Publication Date
DE112014003849T5 true DE112014003849T5 (de) 2016-05-12

Family

ID=52483693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112014003849.0T Pending DE112014003849T5 (de) 2013-08-21 2014-08-21 Maskenrohling, Maskenrohling mit negativem Resistfilm, Phasenverschiebungsmaske und Verfahren zur Herstellung eines durch ein Muster gebildeten Körpers unter Verwendung derselben

Country Status (7)

Country Link
US (1) US9874808B2 (zh)
JP (3) JP2015194673A (zh)
KR (2) KR102380131B1 (zh)
CN (2) CN111913344A (zh)
DE (1) DE112014003849T5 (zh)
TW (1) TWI545390B (zh)
WO (1) WO2015025922A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3086180A1 (en) * 2015-03-31 2016-10-26 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern exposure method

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016035559A (ja) * 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP6551585B2 (ja) * 2014-08-04 2019-07-31 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
WO2016152212A1 (ja) * 2015-03-24 2016-09-29 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP6341129B2 (ja) * 2015-03-31 2018-06-13 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6477159B2 (ja) * 2015-03-31 2019-03-06 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクス及びハーフトーン位相シフトマスクブランクスの製造方法
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6346137B2 (ja) * 2015-09-30 2018-06-20 株式会社ニューギン 遊技機
DE102016203094B4 (de) * 2016-02-26 2022-02-10 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske
WO2018037863A1 (ja) * 2016-08-26 2018-03-01 Hoya株式会社 マスクブランク、転写用マスク及び半導体デバイスの製造方法
JP6677139B2 (ja) * 2016-09-28 2020-04-08 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6432636B2 (ja) * 2017-04-03 2018-12-05 凸版印刷株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
TWI659262B (zh) * 2017-08-07 2019-05-11 日商Ｈｏｙａ股份有限公司 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法
TWI639884B (zh) * 2017-11-23 2018-11-01 Powerchip Technology Corporation 相移式光罩及其製作方法
WO2019167622A1 (ja) * 2018-02-27 2019-09-06 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法
TWI753152B (zh) * 2018-04-12 2022-01-21 聯華電子股份有限公司 光罩以及形成圖案的方法
JP6579219B2 (ja) * 2018-05-07 2019-09-25 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP7179543B2 (ja) * 2018-09-12 2022-11-29 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
CN111367142A (zh) * 2018-12-26 2020-07-03 聚灿光电科技（宿迁）有限公司 一种包含不同透光性的新型光学掩膜版
SG11202108439YA (en) * 2019-02-13 2021-09-29 Hoya Corp Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07199447A (ja) * 1993-12-28 1995-08-04 Sony Corp 単層ハーフトーン方式位相シフトマスク及びその作製方法
JPH0815851A (ja) * 1994-06-24 1996-01-19 Sony Corp ハーフトーン方式位相シフトマスク及びレジスト露光方法
JP3312708B2 (ja) * 1994-09-16 2002-08-12 株式会社東芝 位相シフトマスクの欠陥修正方法
JP4322848B2 (ja) * 2000-09-12 2009-09-02 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法
JP2002169265A (ja) 2000-12-01 2002-06-14 Hoya Corp フォトマスクブランクス及びフォトマスクブランクスの製造方法
JP2002258458A (ja) 2000-12-26 2002-09-11 Hoya Corp ハーフトーン型位相シフトマスク及びマスクブランク
JP4387390B2 (ja) 2000-12-26 2009-12-16 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクおよびマスクブランク、これらの製造方法、並びにパターン転写方法
US20020197509A1 (en) 2001-04-19 2002-12-26 Carcia Peter Francis Ion-beam deposition process for manufacturing multi-layered attenuated phase shift photomask blanks
JP2002323746A (ja) * 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd 位相シフトマスク及び、それを用いたホールパターン形成方法
JP2002351049A (ja) 2001-05-30 2002-12-04 Hitachi Ltd フォトマスクおよびその製造方法
DE10307518B4 (de) 2002-02-22 2011-04-14 Hoya Corp. Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
JP4707922B2 (ja) 2002-04-26 2011-06-22 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4021237B2 (ja) 2002-04-26 2007-12-12 Ｈｏｙａ株式会社 リソグラフィーマスクブランクの製造方法及びリソグラフィーマスク並びにハーフトーン型位相シフトマスクブランク
US7011910B2 (en) 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
WO2005040919A1 (ja) * 2003-10-23 2005-05-06 Matsushita Electric Industrial Co., Ltd. フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
JP4348536B2 (ja) 2004-03-31 2009-10-21 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
TWI348590B (en) 2004-03-31 2011-09-11 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
JP4883278B2 (ja) 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4764214B2 (ja) 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP5023589B2 (ja) 2006-07-21 2012-09-12 大日本印刷株式会社 フォトマスクおよび該フォトマスクの設計方法
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
JP4914272B2 (ja) 2007-04-02 2012-04-11 エルピーダメモリ株式会社 投影露光用のレチクル、該投影露光用のレチクルの製造方法及び該レチクルを用いた半導体装置
JP2007193368A (ja) 2007-04-24 2007-08-02 Renesas Technology Corp 電子装置の製造方法
JP2008310091A (ja) 2007-06-15 2008-12-25 Shin Etsu Chem Co Ltd ハーフトーン型位相シフトマスク
US7868129B2 (en) * 2007-07-12 2011-01-11 Eastman Chemical Company Sloped tubular reactor with spaced sequential trays
TWI453531B (zh) 2008-06-25 2014-09-21 Hoya Corp 相位移空白遮罩及相位移遮罩
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
US8974987B2 (en) * 2009-02-16 2015-03-10 Dai Nippon Printing Co., Ltd. Photomask and methods for manufacturing and correcting photomask
JP5380703B2 (ja) 2009-03-06 2014-01-08 ルネサスエレクトロニクス株式会社 マスクの製造方法および半導体装置の製造方法
JP5177567B2 (ja) 2009-05-15 2013-04-03 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4697495B2 (ja) * 2010-05-28 2011-06-08 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
IL213195A0 (en) * 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
JP2012203317A (ja) * 2011-03-28 2012-10-22 Toppan Printing Co Ltd 位相シフトマスクブランク及び位相シフトマスク及び位相シフトマスクの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3086180A1 (en) * 2015-03-31 2016-10-26 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern exposure method

Also Published As

Publication number Publication date
TW201514609A (zh) 2015-04-16
US20160195803A1 (en) 2016-07-07
KR20210054599A (ko) 2021-05-13
KR20160044466A (ko) 2016-04-25
CN111913344A (zh) 2020-11-10
US9874808B2 (en) 2018-01-23
JP2015194673A (ja) 2015-11-05
TWI545390B (zh) 2016-08-11
WO2015025922A1 (ja) 2015-02-26
JP2015194758A (ja) 2015-11-05
KR102380131B1 (ko) 2022-03-30
KR102251087B1 (ko) 2021-05-14
CN105452956A (zh) 2016-03-30
JP6432444B2 (ja) 2018-12-05
CN105452956B (zh) 2020-09-11
JP2015212826A (ja) 2015-11-26

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