DE112013002267T5 - Halbleiterbauelement - Google Patents

Halbleiterbauelement Download PDF

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Publication number
DE112013002267T5
DE112013002267T5 DE112013002267.2T DE112013002267T DE112013002267T5 DE 112013002267 T5 DE112013002267 T5 DE 112013002267T5 DE 112013002267 T DE112013002267 T DE 112013002267T DE 112013002267 T5 DE112013002267 T5 DE 112013002267T5
Authority
DE
Germany
Prior art keywords
gate
trenches
hybrid
depth
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112013002267.2T
Other languages
German (de)
English (en)
Inventor
Madhur Bobde
Qufei Chen
Misbah Ul Azam
Kyle Terrill
Yang Gao
Sharon Shi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Vishay Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/460,567 external-priority patent/US20120211828A1/en
Application filed by Vishay Siliconix Inc filed Critical Vishay Siliconix Inc
Publication of DE112013002267T5 publication Critical patent/DE112013002267T5/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE112013002267.2T 2012-04-30 2013-04-30 Halbleiterbauelement Ceased DE112013002267T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/460,567 2012-04-30
US13/460,567 US20120211828A1 (en) 2009-10-21 2012-04-30 Hybrid split gate semiconductor
PCT/US2013/038956 WO2013166078A1 (en) 2012-04-30 2013-04-30 Semiconductor device

Publications (1)

Publication Number Publication Date
DE112013002267T5 true DE112013002267T5 (de) 2015-03-12

Family

ID=49514833

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112013002267.2T Ceased DE112013002267T5 (de) 2012-04-30 2013-04-30 Halbleiterbauelement

Country Status (5)

Country Link
JP (1) JP2015519743A (zh)
KR (1) KR20150003775A (zh)
CN (1) CN104541374A (zh)
DE (1) DE112013002267T5 (zh)
WO (1) WO2013166078A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
CN105702736B (zh) * 2016-01-29 2019-10-11 上海华虹宏力半导体制造有限公司 屏蔽栅-深沟槽mosfet的屏蔽栅氧化层及其形成方法
CN105977298B (zh) * 2016-05-26 2019-04-23 深圳尚阳通科技有限公司 屏蔽栅功率器件及其制造方法
CN108447911B (zh) * 2018-03-09 2021-07-27 香港商莫斯飞特半导体股份有限公司 一种深浅沟槽半导体功率器件及其制备方法
CN110444591B (zh) * 2019-08-31 2021-04-20 电子科技大学 具有低比导通电阻的槽型器件及其制造方法
CN112635659B (zh) * 2019-10-09 2023-03-24 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN110600543A (zh) * 2019-10-17 2019-12-20 厦门芯达茂微电子有限公司 一种Split Gate-IGBT结构及其制作方法
CN111933710B (zh) * 2020-08-03 2023-04-07 株洲中车时代半导体有限公司 碳化硅器件的元胞结构、其制备方法及碳化硅器件
CN113471278A (zh) * 2021-06-24 2021-10-01 无锡新洁能股份有限公司 屏蔽栅沟槽型半导体器件及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7576388B1 (en) * 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
WO2005065385A2 (en) * 2003-12-30 2005-07-21 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2006202931A (ja) * 2005-01-20 2006-08-03 Renesas Technology Corp 半導体装置およびその製造方法
US7453119B2 (en) * 2005-02-11 2008-11-18 Alphs & Omega Semiconductor, Ltd. Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
CN102738239A (zh) * 2005-05-26 2012-10-17 飞兆半导体公司 沟槽栅场效应晶体管及其制造方法
WO2007129261A2 (en) * 2006-05-05 2007-11-15 Nxp B.V. Trench field effect transistors
US7544571B2 (en) * 2006-09-20 2009-06-09 Fairchild Semiconductor Corporation Trench gate FET with self-aligned features
US9419129B2 (en) * 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US8354711B2 (en) * 2010-01-11 2013-01-15 Maxpower Semiconductor, Inc. Power MOSFET and its edge termination
JP5569162B2 (ja) * 2010-06-10 2014-08-13 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5580150B2 (ja) * 2010-09-09 2014-08-27 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
WO2013166078A1 (en) 2013-11-07
JP2015519743A (ja) 2015-07-09
KR20150003775A (ko) 2015-01-09
CN104541374A (zh) 2015-04-22

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