JP2015519743A - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
- Publication number
- JP2015519743A JP2015519743A JP2015510397A JP2015510397A JP2015519743A JP 2015519743 A JP2015519743 A JP 2015519743A JP 2015510397 A JP2015510397 A JP 2015510397A JP 2015510397 A JP2015510397 A JP 2015510397A JP 2015519743 A JP2015519743 A JP 2015519743A
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- Prior art keywords
- gate
- trench
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- trenches
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 239000000758 substrate Substances 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 210000000746 body region Anatomy 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 description 36
- 230000008569 process Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
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- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/460,567 | 2012-04-30 | ||
US13/460,567 US20120211828A1 (en) | 2009-10-21 | 2012-04-30 | Hybrid split gate semiconductor |
PCT/US2013/038956 WO2013166078A1 (en) | 2012-04-30 | 2013-04-30 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015519743A true JP2015519743A (ja) | 2015-07-09 |
Family
ID=49514833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015510397A Pending JP2015519743A (ja) | 2012-04-30 | 2013-04-30 | 半導体デバイス |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2015519743A (zh) |
KR (1) | KR20150003775A (zh) |
CN (1) | CN104541374A (zh) |
DE (1) | DE112013002267T5 (zh) |
WO (1) | WO2013166078A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9419129B2 (en) | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
CN105702736B (zh) * | 2016-01-29 | 2019-10-11 | 上海华虹宏力半导体制造有限公司 | 屏蔽栅-深沟槽mosfet的屏蔽栅氧化层及其形成方法 |
CN105977298B (zh) * | 2016-05-26 | 2019-04-23 | 深圳尚阳通科技有限公司 | 屏蔽栅功率器件及其制造方法 |
CN108447911B (zh) * | 2018-03-09 | 2021-07-27 | 香港商莫斯飞特半导体股份有限公司 | 一种深浅沟槽半导体功率器件及其制备方法 |
CN110444591B (zh) * | 2019-08-31 | 2021-04-20 | 电子科技大学 | 具有低比导通电阻的槽型器件及其制造方法 |
CN112635659B (zh) * | 2019-10-09 | 2023-03-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN110600543A (zh) * | 2019-10-17 | 2019-12-20 | 厦门芯达茂微电子有限公司 | 一种Split Gate-IGBT结构及其制作方法 |
CN111933710B (zh) * | 2020-08-03 | 2023-04-07 | 株洲中车时代半导体有限公司 | 碳化硅器件的元胞结构、其制备方法及碳化硅器件 |
CN113471278A (zh) * | 2021-06-24 | 2021-10-01 | 无锡新洁能股份有限公司 | 屏蔽栅沟槽型半导体器件及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006202931A (ja) * | 2005-01-20 | 2006-08-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
WO2007129261A2 (en) * | 2006-05-05 | 2007-11-15 | Nxp B.V. | Trench field effect transistors |
JP2011258834A (ja) * | 2010-06-10 | 2011-12-22 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2012059943A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7576388B1 (en) * | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
WO2005065385A2 (en) * | 2003-12-30 | 2005-07-21 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7453119B2 (en) * | 2005-02-11 | 2008-11-18 | Alphs & Omega Semiconductor, Ltd. | Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact |
CN102738239A (zh) * | 2005-05-26 | 2012-10-17 | 飞兆半导体公司 | 沟槽栅场效应晶体管及其制造方法 |
US7544571B2 (en) * | 2006-09-20 | 2009-06-09 | Fairchild Semiconductor Corporation | Trench gate FET with self-aligned features |
US9419129B2 (en) * | 2009-10-21 | 2016-08-16 | Vishay-Siliconix | Split gate semiconductor device with curved gate oxide profile |
US8354711B2 (en) * | 2010-01-11 | 2013-01-15 | Maxpower Semiconductor, Inc. | Power MOSFET and its edge termination |
-
2013
- 2013-04-30 KR KR1020147030434A patent/KR20150003775A/ko not_active Application Discontinuation
- 2013-04-30 WO PCT/US2013/038956 patent/WO2013166078A1/en active Application Filing
- 2013-04-30 DE DE112013002267.2T patent/DE112013002267T5/de not_active Ceased
- 2013-04-30 CN CN201380022798.3A patent/CN104541374A/zh active Pending
- 2013-04-30 JP JP2015510397A patent/JP2015519743A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006202931A (ja) * | 2005-01-20 | 2006-08-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
WO2007129261A2 (en) * | 2006-05-05 | 2007-11-15 | Nxp B.V. | Trench field effect transistors |
JP2011258834A (ja) * | 2010-06-10 | 2011-12-22 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2012059943A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2013166078A1 (en) | 2013-11-07 |
DE112013002267T5 (de) | 2015-03-12 |
KR20150003775A (ko) | 2015-01-09 |
CN104541374A (zh) | 2015-04-22 |
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