DE112004001117B4 - Halbleiterbauelement und Verfahren zur Herstellung - Google Patents

Halbleiterbauelement und Verfahren zur Herstellung Download PDF

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Publication number
DE112004001117B4
DE112004001117B4 DE112004001117T DE112004001117T DE112004001117B4 DE 112004001117 B4 DE112004001117 B4 DE 112004001117B4 DE 112004001117 T DE112004001117 T DE 112004001117T DE 112004001117 T DE112004001117 T DE 112004001117T DE 112004001117 B4 DE112004001117 B4 DE 112004001117B4
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DE
Germany
Prior art keywords
layer
gate
semiconductor
forming
dielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112004001117T
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German (de)
English (en)
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DE112004001117T5 (de
Inventor
Zoran Krivokapic
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GlobalFoundries Inc
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GlobalFoundries Inc
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Publication date
Application filed by GlobalFoundries Inc filed Critical GlobalFoundries Inc
Publication of DE112004001117T5 publication Critical patent/DE112004001117T5/de
Application granted granted Critical
Publication of DE112004001117B4 publication Critical patent/DE112004001117B4/de
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
DE112004001117T 2003-06-23 2004-06-05 Halbleiterbauelement und Verfahren zur Herstellung Expired - Fee Related DE112004001117B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/601,401 US6913959B2 (en) 2003-06-23 2003-06-23 Method of manufacturing a semiconductor device having a MESA structure
US10/601,401 2003-06-23
PCT/US2004/017727 WO2005001908A2 (en) 2003-06-23 2004-06-05 Strained semiconductor device and method of manufacture

Publications (2)

Publication Number Publication Date
DE112004001117T5 DE112004001117T5 (de) 2006-06-29
DE112004001117B4 true DE112004001117B4 (de) 2011-12-01

Family

ID=33552165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112004001117T Expired - Fee Related DE112004001117B4 (de) 2003-06-23 2004-06-05 Halbleiterbauelement und Verfahren zur Herstellung

Country Status (8)

Country Link
US (1) US6913959B2 (https=)
JP (1) JP2007519217A (https=)
KR (1) KR101065046B1 (https=)
CN (1) CN100521231C (https=)
DE (1) DE112004001117B4 (https=)
GB (1) GB2418533B (https=)
TW (1) TWI341546B (https=)
WO (1) WO2005001908A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100725112B1 (ko) * 2005-04-27 2007-06-04 한국과학기술원 백―바이어스를 이용하여 ｓｏｉ 기판에 형성된 플래시 블록을 소거하기 위한 플래시 메모리 소자의 제조 방법, 그 소거 방법 및 그 구조
JP4988217B2 (ja) * 2006-02-03 2012-08-01 株式会社日立製作所 Ｍｅｍｓ構造体の製造方法
US9184263B2 (en) * 2013-12-30 2015-11-10 Globalfoundries Inc. Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
US10170332B2 (en) * 2014-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET thermal protection methods and related structures
US10014410B2 (en) 2014-12-02 2018-07-03 Renesas Electronics Corporation Method for producing semiconductor device and semiconductor device
US20170366965A1 (en) * 2016-06-21 2017-12-21 Chiun Mai Communication Systems, Inc. Communication device, communication system and method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002078075A1 (en) * 2001-03-23 2002-10-03 Université Catholique de Louvain Fabrication method of so1 semiconductor devices

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EP0510667B1 (en) 1991-04-26 1996-09-11 Canon Kabushiki Kaisha Semiconductor device having an improved insulated gate transistor
US5397904A (en) * 1992-07-02 1995-03-14 Cornell Research Foundation, Inc. Transistor microstructure
DE4340967C1 (de) * 1993-12-01 1994-10-27 Siemens Ag Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor
JP3078720B2 (ja) * 1994-11-02 2000-08-21 三菱電機株式会社 半導体装置およびその製造方法
DE19544721C1 (de) * 1995-11-30 1997-04-30 Siemens Ag Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor
JP3472401B2 (ja) * 1996-01-17 2003-12-02 三菱電機株式会社 半導体装置の製造方法
DE19711482C2 (de) * 1997-03-19 1999-01-07 Siemens Ag Verfahren zur Herstellung eines vertikalen MOS-Transistors
US6118161A (en) 1997-04-30 2000-09-12 Texas Instruments Incorporated Self-aligned trenched-channel lateral-current-flow transistor
JPH1131659A (ja) * 1997-07-10 1999-02-02 Toshiba Corp 半導体装置の製造方法
US6200866B1 (en) * 1998-02-23 2001-03-13 Sharp Laboratories Of America, Inc. Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET
KR100280106B1 (ko) * 1998-04-16 2001-03-02 윤종용 트렌치 격리 형성 방법
US6080612A (en) * 1998-05-20 2000-06-27 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI electrostatic discharge protection device
US6339002B1 (en) * 1999-02-10 2002-01-15 International Business Machines Corporation Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts
US6770689B1 (en) * 1999-03-19 2004-08-03 Sakura Color Products Corp. Aqueous glittering ink
US6252284B1 (en) 1999-12-09 2001-06-26 International Business Machines Corporation Planarized silicon fin device
JP2002151688A (ja) * 2000-08-28 2002-05-24 Mitsubishi Electric Corp Ｍｏｓ型半導体装置およびその製造方法
US6495401B1 (en) 2000-10-12 2002-12-17 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI MOS transistor
KR100346845B1 (ko) * 2000-12-16 2002-08-03 삼성전자 주식회사 반도체 장치의 얕은 트렌치 아이솔레이션 형성방법
US6635923B2 (en) 2001-05-24 2003-10-21 International Business Machines Corporation Damascene double-gate MOSFET with vertical channel regions
KR100428768B1 (ko) * 2001-08-29 2004-04-30 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 그 형성 방법
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WO2002078075A1 (en) * 2001-03-23 2002-10-03 Université Catholique de Louvain Fabrication method of so1 semiconductor devices

Also Published As

Publication number Publication date
TWI341546B (en) 2011-05-01
GB2418533A (en) 2006-03-29
WO2005001908A2 (en) 2005-01-06
GB0523869D0 (en) 2006-01-04
JP2007519217A (ja) 2007-07-12
US20050003593A1 (en) 2005-01-06
KR20060062035A (ko) 2006-06-09
CN100521231C (zh) 2009-07-29
DE112004001117T5 (de) 2006-06-29
US6913959B2 (en) 2005-07-05
CN1809927A (zh) 2006-07-26
KR101065046B1 (ko) 2011-09-19
WO2005001908A3 (en) 2005-06-02
TW200507030A (en) 2005-02-16
GB2418533B (en) 2007-03-28

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