DE10308381B4 - Verfahren zur Abscheidung von Silizium - Google Patents

Verfahren zur Abscheidung von Silizium Download PDF

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Publication number
DE10308381B4
DE10308381B4 DE10308381A DE10308381A DE10308381B4 DE 10308381 B4 DE10308381 B4 DE 10308381B4 DE 10308381 A DE10308381 A DE 10308381A DE 10308381 A DE10308381 A DE 10308381A DE 10308381 B4 DE10308381 B4 DE 10308381B4
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DE
Germany
Prior art keywords
plasma
silicon
chamber
hydrogen
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE10308381A
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German (de)
English (en)
Other versions
DE10308381A1 (de
Inventor
Tobias Roschek
Dr. Rech Bernd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10308381A priority Critical patent/DE10308381B4/de
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Priority to PCT/DE2004/000066 priority patent/WO2004076713A1/de
Priority to RU2005129984/02A priority patent/RU2005129984A/ru
Priority to AU2004215243A priority patent/AU2004215243B2/en
Priority to KR1020057015528A priority patent/KR101127047B1/ko
Priority to PT04703337T priority patent/PT1601813E/pt
Priority to ES04703337T priority patent/ES2311792T3/es
Priority to JP2006501464A priority patent/JP4733627B2/ja
Priority to CA2517598A priority patent/CA2517598C/en
Priority to AT04703337T priority patent/ATE403763T1/de
Priority to SI200430905T priority patent/SI1601813T1/sl
Priority to US10/547,118 priority patent/US7981776B2/en
Priority to EP04703337A priority patent/EP1601813B1/de
Priority to DE502004007776T priority patent/DE502004007776D1/de
Priority to CNA2004800052636A priority patent/CN1754007A/zh
Publication of DE10308381A1 publication Critical patent/DE10308381A1/de
Priority to CY20081101261T priority patent/CY1108484T1/el
Application granted granted Critical
Publication of DE10308381B4 publication Critical patent/DE10308381B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DE10308381A 2003-02-27 2003-02-27 Verfahren zur Abscheidung von Silizium Expired - Lifetime DE10308381B4 (de)

Priority Applications (16)

Application Number Priority Date Filing Date Title
DE10308381A DE10308381B4 (de) 2003-02-27 2003-02-27 Verfahren zur Abscheidung von Silizium
SI200430905T SI1601813T1 (sl) 2003-02-27 2004-01-20 Postopek za nanos silicija
AU2004215243A AU2004215243B2 (en) 2003-02-27 2004-01-20 Method for depositing silicon
KR1020057015528A KR101127047B1 (ko) 2003-02-27 2004-01-20 규소 침착 방법
PT04703337T PT1601813E (pt) 2003-02-27 2004-01-20 Método para depositar silicone
ES04703337T ES2311792T3 (es) 2003-02-27 2004-01-20 Procedimiento para la deposicion de silicio.
JP2006501464A JP4733627B2 (ja) 2003-02-27 2004-01-20 珪素の析出法
CA2517598A CA2517598C (en) 2003-02-27 2004-01-20 Method of depositing silicon
PCT/DE2004/000066 WO2004076713A1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium
RU2005129984/02A RU2005129984A (ru) 2003-02-27 2004-01-20 Способ осаждения кремния
US10/547,118 US7981776B2 (en) 2003-02-27 2004-01-20 Method for depositing silicon
EP04703337A EP1601813B1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium
DE502004007776T DE502004007776D1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium
CNA2004800052636A CN1754007A (zh) 2003-02-27 2004-01-20 沉积硅的方法
AT04703337T ATE403763T1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium
CY20081101261T CY1108484T1 (el) 2003-02-27 2008-11-06 Μεθοδος για την αποθεση πυριτιου

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10308381A DE10308381B4 (de) 2003-02-27 2003-02-27 Verfahren zur Abscheidung von Silizium

Publications (2)

Publication Number Publication Date
DE10308381A1 DE10308381A1 (de) 2004-09-16
DE10308381B4 true DE10308381B4 (de) 2012-08-16

Family

ID=32863924

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10308381A Expired - Lifetime DE10308381B4 (de) 2003-02-27 2003-02-27 Verfahren zur Abscheidung von Silizium
DE502004007776T Expired - Lifetime DE502004007776D1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE502004007776T Expired - Lifetime DE502004007776D1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium

Country Status (15)

Country Link
US (1) US7981776B2 (https=)
EP (1) EP1601813B1 (https=)
JP (1) JP4733627B2 (https=)
KR (1) KR101127047B1 (https=)
CN (1) CN1754007A (https=)
AT (1) ATE403763T1 (https=)
AU (1) AU2004215243B2 (https=)
CA (1) CA2517598C (https=)
CY (1) CY1108484T1 (https=)
DE (2) DE10308381B4 (https=)
ES (1) ES2311792T3 (https=)
PT (1) PT1601813E (https=)
RU (1) RU2005129984A (https=)
SI (1) SI1601813T1 (https=)
WO (1) WO2004076713A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216624A (ja) * 2005-02-01 2006-08-17 Mitsubishi Heavy Ind Ltd 太陽電池及び太陽電池の製造方法
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
TWI350006B (en) * 2007-10-05 2011-10-01 Ind Tech Res Inst Plasma enhanced thin film deposition method
WO2009059238A1 (en) 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
JP5005588B2 (ja) 2008-03-14 2012-08-22 東洋自動機株式会社 袋移送及び傾き修正装置
RU2367600C1 (ru) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Способ получения кремния высокой чистоты
DE102008063737A1 (de) 2008-12-18 2010-06-24 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat
TW201120942A (en) * 2009-12-08 2011-06-16 Ind Tech Res Inst Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition
CN102108494B (zh) * 2009-12-23 2013-01-16 财团法人工业技术研究院 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置
CN102031503B (zh) * 2010-09-29 2012-12-05 理想能源设备(上海)有限公司 硅薄膜的沉积方法
US8642376B2 (en) * 2011-05-16 2014-02-04 Applied Materials, Inc. Methods for depositing a material atop a substrate
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
DE102014007766B4 (de) * 2014-05-21 2025-10-16 Christian Bauch Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan
CN114242833A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 异质结太阳电池的硅片处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19711268A1 (de) * 1996-03-18 1997-10-30 Hyundai Electronics Ind Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma
JP2002030438A (ja) * 2000-07-17 2002-01-31 Kobe Steel Ltd 微結晶シリコン薄膜の形成方法
US6488995B1 (en) * 1998-02-17 2002-12-03 Canon Kabushiki Kaisha Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US5334423A (en) * 1993-01-28 1994-08-02 United Solar Systems Corp. Microwave energized process for the preparation of high quality semiconductor material
JPH09232235A (ja) * 1995-02-24 1997-09-05 Mitsui Toatsu Chem Inc 光電変換素子
US5824940A (en) 1997-01-27 1998-10-20 Alfred University Ceramic bullet-proof fabric
JP4335389B2 (ja) * 1999-11-24 2009-09-30 株式会社カネカ シリコン系薄膜光電変換装置の製造方法
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
JP4397391B2 (ja) * 2006-10-30 2010-01-13 信越フィルム株式会社 ガスバリア性プラスチックおよびプラスチックフィルムの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19711268A1 (de) * 1996-03-18 1997-10-30 Hyundai Electronics Ind Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma
US6488995B1 (en) * 1998-02-17 2002-12-03 Canon Kabushiki Kaisha Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby
JP2002030438A (ja) * 2000-07-17 2002-01-31 Kobe Steel Ltd 微結晶シリコン薄膜の形成方法

Also Published As

Publication number Publication date
DE10308381A1 (de) 2004-09-16
CA2517598A1 (en) 2004-09-10
JP4733627B2 (ja) 2011-07-27
US7981776B2 (en) 2011-07-19
RU2005129984A (ru) 2006-05-10
KR101127047B1 (ko) 2012-04-23
JP2006519482A (ja) 2006-08-24
ATE403763T1 (de) 2008-08-15
US20060240649A1 (en) 2006-10-26
CY1108484T1 (el) 2014-04-09
DE502004007776D1 (de) 2008-09-18
CA2517598C (en) 2012-05-15
KR20050114218A (ko) 2005-12-05
PT1601813E (pt) 2008-11-13
EP1601813A1 (de) 2005-12-07
WO2004076713A1 (de) 2004-09-10
SI1601813T1 (sl) 2009-02-28
AU2004215243A1 (en) 2004-09-10
ES2311792T3 (es) 2009-02-16
EP1601813B1 (de) 2008-08-06
AU2004215243B2 (en) 2009-12-03
CN1754007A (zh) 2006-03-29

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Effective date: 20121117

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