PT1601813E - Método para depositar silicone - Google Patents

Método para depositar silicone Download PDF

Info

Publication number
PT1601813E
PT1601813E PT04703337T PT04703337T PT1601813E PT 1601813 E PT1601813 E PT 1601813E PT 04703337 T PT04703337 T PT 04703337T PT 04703337 T PT04703337 T PT 04703337T PT 1601813 E PT1601813 E PT 1601813E
Authority
PT
Portugal
Prior art keywords
plasma
chamber
hydrogen
sccm
gas
Prior art date
Application number
PT04703337T
Other languages
English (en)
Portuguese (pt)
Inventor
Tobias Roschek
Bernd Rech
Original Assignee
Forschungszentrum Juelich Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh filed Critical Forschungszentrum Juelich Gmbh
Publication of PT1601813E publication Critical patent/PT1601813E/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
PT04703337T 2003-02-27 2004-01-20 Método para depositar silicone PT1601813E (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10308381A DE10308381B4 (de) 2003-02-27 2003-02-27 Verfahren zur Abscheidung von Silizium

Publications (1)

Publication Number Publication Date
PT1601813E true PT1601813E (pt) 2008-11-13

Family

ID=32863924

Family Applications (1)

Application Number Title Priority Date Filing Date
PT04703337T PT1601813E (pt) 2003-02-27 2004-01-20 Método para depositar silicone

Country Status (15)

Country Link
US (1) US7981776B2 (https=)
EP (1) EP1601813B1 (https=)
JP (1) JP4733627B2 (https=)
KR (1) KR101127047B1 (https=)
CN (1) CN1754007A (https=)
AT (1) ATE403763T1 (https=)
AU (1) AU2004215243B2 (https=)
CA (1) CA2517598C (https=)
CY (1) CY1108484T1 (https=)
DE (2) DE10308381B4 (https=)
ES (1) ES2311792T3 (https=)
PT (1) PT1601813E (https=)
RU (1) RU2005129984A (https=)
SI (1) SI1601813T1 (https=)
WO (1) WO2004076713A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216624A (ja) * 2005-02-01 2006-08-17 Mitsubishi Heavy Ind Ltd 太陽電池及び太陽電池の製造方法
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
TWI350006B (en) * 2007-10-05 2011-10-01 Ind Tech Res Inst Plasma enhanced thin film deposition method
WO2009059238A1 (en) 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
JP5005588B2 (ja) 2008-03-14 2012-08-22 東洋自動機株式会社 袋移送及び傾き修正装置
RU2367600C1 (ru) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Способ получения кремния высокой чистоты
DE102008063737A1 (de) * 2008-12-18 2010-06-24 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat
TW201120942A (en) * 2009-12-08 2011-06-16 Ind Tech Res Inst Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition
CN102108494B (zh) * 2009-12-23 2013-01-16 财团法人工业技术研究院 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置
CN102031503B (zh) * 2010-09-29 2012-12-05 理想能源设备(上海)有限公司 硅薄膜的沉积方法
US8642376B2 (en) * 2011-05-16 2014-02-04 Applied Materials, Inc. Methods for depositing a material atop a substrate
DE102014007766B4 (de) * 2014-05-21 2025-10-16 Christian Bauch Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
CN114242833A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 异质结太阳电池的硅片处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334423A (en) * 1993-01-28 1994-08-02 United Solar Systems Corp. Microwave energized process for the preparation of high quality semiconductor material
JPH09232235A (ja) * 1995-02-24 1997-09-05 Mitsui Toatsu Chem Inc 光電変換素子
KR100469134B1 (ko) 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터
US5824940A (en) * 1997-01-27 1998-10-20 Alfred University Ceramic bullet-proof fabric
JPH11233801A (ja) * 1998-02-17 1999-08-27 Canon Inc 微結晶シリコン膜の形成方法、および光起電力素子
JP4335389B2 (ja) * 1999-11-24 2009-09-30 株式会社カネカ シリコン系薄膜光電変換装置の製造方法
JP3857024B2 (ja) * 2000-07-17 2006-12-13 株式会社神戸製鋼所 微結晶シリコン薄膜の形成方法
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
JP4397391B2 (ja) * 2006-10-30 2010-01-13 信越フィルム株式会社 ガスバリア性プラスチックおよびプラスチックフィルムの製造方法

Also Published As

Publication number Publication date
US20060240649A1 (en) 2006-10-26
CA2517598A1 (en) 2004-09-10
DE502004007776D1 (de) 2008-09-18
DE10308381A1 (de) 2004-09-16
AU2004215243A1 (en) 2004-09-10
SI1601813T1 (sl) 2009-02-28
DE10308381B4 (de) 2012-08-16
EP1601813A1 (de) 2005-12-07
JP2006519482A (ja) 2006-08-24
US7981776B2 (en) 2011-07-19
CA2517598C (en) 2012-05-15
CY1108484T1 (el) 2014-04-09
ES2311792T3 (es) 2009-02-16
AU2004215243B2 (en) 2009-12-03
ATE403763T1 (de) 2008-08-15
JP4733627B2 (ja) 2011-07-27
KR101127047B1 (ko) 2012-04-23
RU2005129984A (ru) 2006-05-10
WO2004076713A1 (de) 2004-09-10
CN1754007A (zh) 2006-03-29
KR20050114218A (ko) 2005-12-05
EP1601813B1 (de) 2008-08-06

Similar Documents

Publication Publication Date Title
PT1601813E (pt) Método para depositar silicone
Keppner et al. The “Micromorph” cell: a new way to high-efficiency-low-temperature crystalline silicon thin-film cell manufacturing?
Kakiuchi et al. Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition
CN101246932A (zh) 氢氩高稀释方法生产氢化硅薄膜
Kim et al. Growth of microcrystal silicon by remote plasma chemical vapor deposition
US7902049B2 (en) Method for depositing high-quality microcrystalline semiconductor materials
CN101550544B (zh) 一种改善高速沉积微晶硅材料中非晶孵化层的方法
JPH07130661A (ja) 非晶質酸化シリコン薄膜の生成方法
US20120167963A1 (en) Photovoltaic Device Structure with Primer Layer
US8273641B2 (en) Plasma deposition of amorphous semiconductors at microwave frequencies
EP3125305A1 (en) Method for manufacturing germanium based thin film solar cells with improved light induced degradation properties
JPH04373122A (ja) 薄膜半導体の製造法
JP2659400B2 (ja) 炭素含有シリコン薄膜の形成法
JP2723548B2 (ja) 炭素含有シリコン微結晶薄膜の形成法
Soppe et al. High rate growth of micro-crystalline silicon by microwave-PECVD
Podraza et al. Development of deposition phase diagrams for thin film Si: H and Si1-xGex: H using real time spectroscopic ellipsometry
EP3125304A1 (en) Method for manufacturing silicon based thin film solar cells with improved light induced degradation properties
Smith et al. The efficiency of gas usage in glow-discharge deposition of hydrogenated amorphous silicon
CN120129333A (zh) 一种硅片硼掺杂层的制备方法、硅片及装置系统
JP2575397B2 (ja) 光電変換素子の製造方法
Lin et al. Low-temperature growth of poly-crystalline silicon films using SiCl/sub 4/and H/sub 2/mixture
Yang et al. Reduced adverse effects on Si thin film solar cells caused by growth chamber air exposure
Xi et al. Identification and Reduction of PI Interface Instability and Establishment of 8.5% Stabilized Efficiency for Single Junction a-Si Solar Cells
JPH05275354A (ja) シリコン薄膜の製造法
Kim et al. Amorphous silicon double stacked solar cell using low band gap A-Si bottom cell