CY1108484T1 - Μεθοδος για την αποθεση πυριτιου - Google Patents
Μεθοδος για την αποθεση πυριτιουInfo
- Publication number
- CY1108484T1 CY1108484T1 CY20081101261T CY081101261T CY1108484T1 CY 1108484 T1 CY1108484 T1 CY 1108484T1 CY 20081101261 T CY20081101261 T CY 20081101261T CY 081101261 T CY081101261 T CY 081101261T CY 1108484 T1 CY1108484 T1 CY 1108484T1
- Authority
- CY
- Cyprus
- Prior art keywords
- silicon
- chamber
- plasma
- hydrogen
- gas containing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3411—Silicon, silicon germanium or germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10308381A DE10308381B4 (de) | 2003-02-27 | 2003-02-27 | Verfahren zur Abscheidung von Silizium |
| EP04703337A EP1601813B1 (de) | 2003-02-27 | 2004-01-20 | Verfahren zur abscheidung von silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CY1108484T1 true CY1108484T1 (el) | 2014-04-09 |
Family
ID=32863924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CY20081101261T CY1108484T1 (el) | 2003-02-27 | 2008-11-06 | Μεθοδος για την αποθεση πυριτιου |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US7981776B2 (https=) |
| EP (1) | EP1601813B1 (https=) |
| JP (1) | JP4733627B2 (https=) |
| KR (1) | KR101127047B1 (https=) |
| CN (1) | CN1754007A (https=) |
| AT (1) | ATE403763T1 (https=) |
| AU (1) | AU2004215243B2 (https=) |
| CA (1) | CA2517598C (https=) |
| CY (1) | CY1108484T1 (https=) |
| DE (2) | DE10308381B4 (https=) |
| ES (1) | ES2311792T3 (https=) |
| PT (1) | PT1601813E (https=) |
| RU (1) | RU2005129984A (https=) |
| SI (1) | SI1601813T1 (https=) |
| WO (1) | WO2004076713A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006216624A (ja) * | 2005-02-01 | 2006-08-17 | Mitsubishi Heavy Ind Ltd | 太陽電池及び太陽電池の製造方法 |
| US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| TWI350006B (en) * | 2007-10-05 | 2011-10-01 | Ind Tech Res Inst | Plasma enhanced thin film deposition method |
| WO2009059238A1 (en) | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Plasma treatment between deposition processes |
| JP5005588B2 (ja) | 2008-03-14 | 2012-08-22 | 東洋自動機株式会社 | 袋移送及び傾き修正装置 |
| RU2367600C1 (ru) * | 2008-04-16 | 2009-09-20 | Борис Георгиевич Грибов | Способ получения кремния высокой чистоты |
| DE102008063737A1 (de) * | 2008-12-18 | 2010-06-24 | Forschungszentrum Jülich GmbH | Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat |
| TW201120942A (en) * | 2009-12-08 | 2011-06-16 | Ind Tech Res Inst | Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition |
| CN102108494B (zh) * | 2009-12-23 | 2013-01-16 | 财团法人工业技术研究院 | 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置 |
| CN102031503B (zh) * | 2010-09-29 | 2012-12-05 | 理想能源设备(上海)有限公司 | 硅薄膜的沉积方法 |
| US8642376B2 (en) * | 2011-05-16 | 2014-02-04 | Applied Materials, Inc. | Methods for depositing a material atop a substrate |
| DE102014007766B4 (de) * | 2014-05-21 | 2025-10-16 | Christian Bauch | Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan |
| DE102014007767B4 (de) * | 2014-05-21 | 2025-08-28 | Christian Bauch | Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan |
| CN114242833A (zh) * | 2021-11-18 | 2022-03-25 | 国家电投集团科学技术研究院有限公司 | 异质结太阳电池的硅片处理方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5334423A (en) * | 1993-01-28 | 1994-08-02 | United Solar Systems Corp. | Microwave energized process for the preparation of high quality semiconductor material |
| JPH09232235A (ja) * | 1995-02-24 | 1997-09-05 | Mitsui Toatsu Chem Inc | 光電変換素子 |
| KR100469134B1 (ko) | 1996-03-18 | 2005-09-02 | 비오이 하이디스 테크놀로지 주식회사 | 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터 |
| US5824940A (en) * | 1997-01-27 | 1998-10-20 | Alfred University | Ceramic bullet-proof fabric |
| JPH11233801A (ja) * | 1998-02-17 | 1999-08-27 | Canon Inc | 微結晶シリコン膜の形成方法、および光起電力素子 |
| JP4335389B2 (ja) * | 1999-11-24 | 2009-09-30 | 株式会社カネカ | シリコン系薄膜光電変換装置の製造方法 |
| JP3857024B2 (ja) * | 2000-07-17 | 2006-12-13 | 株式会社神戸製鋼所 | 微結晶シリコン薄膜の形成方法 |
| JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| JP4397391B2 (ja) * | 2006-10-30 | 2010-01-13 | 信越フィルム株式会社 | ガスバリア性プラスチックおよびプラスチックフィルムの製造方法 |
-
2003
- 2003-02-27 DE DE10308381A patent/DE10308381B4/de not_active Expired - Lifetime
-
2004
- 2004-01-20 ES ES04703337T patent/ES2311792T3/es not_active Expired - Lifetime
- 2004-01-20 US US10/547,118 patent/US7981776B2/en not_active Expired - Fee Related
- 2004-01-20 KR KR1020057015528A patent/KR101127047B1/ko not_active Expired - Fee Related
- 2004-01-20 EP EP04703337A patent/EP1601813B1/de not_active Expired - Lifetime
- 2004-01-20 PT PT04703337T patent/PT1601813E/pt unknown
- 2004-01-20 CN CNA2004800052636A patent/CN1754007A/zh active Pending
- 2004-01-20 DE DE502004007776T patent/DE502004007776D1/de not_active Expired - Lifetime
- 2004-01-20 WO PCT/DE2004/000066 patent/WO2004076713A1/de not_active Ceased
- 2004-01-20 AT AT04703337T patent/ATE403763T1/de active
- 2004-01-20 CA CA2517598A patent/CA2517598C/en not_active Expired - Fee Related
- 2004-01-20 RU RU2005129984/02A patent/RU2005129984A/ru not_active Application Discontinuation
- 2004-01-20 SI SI200430905T patent/SI1601813T1/sl unknown
- 2004-01-20 AU AU2004215243A patent/AU2004215243B2/en not_active Ceased
- 2004-01-20 JP JP2006501464A patent/JP4733627B2/ja not_active Expired - Fee Related
-
2008
- 2008-11-06 CY CY20081101261T patent/CY1108484T1/el unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20060240649A1 (en) | 2006-10-26 |
| CA2517598A1 (en) | 2004-09-10 |
| DE502004007776D1 (de) | 2008-09-18 |
| PT1601813E (pt) | 2008-11-13 |
| DE10308381A1 (de) | 2004-09-16 |
| AU2004215243A1 (en) | 2004-09-10 |
| SI1601813T1 (sl) | 2009-02-28 |
| DE10308381B4 (de) | 2012-08-16 |
| EP1601813A1 (de) | 2005-12-07 |
| JP2006519482A (ja) | 2006-08-24 |
| US7981776B2 (en) | 2011-07-19 |
| CA2517598C (en) | 2012-05-15 |
| ES2311792T3 (es) | 2009-02-16 |
| AU2004215243B2 (en) | 2009-12-03 |
| ATE403763T1 (de) | 2008-08-15 |
| JP4733627B2 (ja) | 2011-07-27 |
| KR101127047B1 (ko) | 2012-04-23 |
| RU2005129984A (ru) | 2006-05-10 |
| WO2004076713A1 (de) | 2004-09-10 |
| CN1754007A (zh) | 2006-03-29 |
| KR20050114218A (ko) | 2005-12-05 |
| EP1601813B1 (de) | 2008-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CY1108484T1 (el) | Μεθοδος για την αποθεση πυριτιου | |
| WO2006055459A3 (en) | Tensile and compressive stressed materials for semiconductors | |
| JP5276594B2 (ja) | プラズマからの蒸着による成膜方法 | |
| ATE251341T1 (de) | Verfahren zur ätzung von substraten | |
| EP0936284A3 (en) | Method and apparatus for producing thin films | |
| CA1269061C (en) | PRODUCTION OF DIAMOND-LIKE CARBON COATINGS | |
| TW200605196A (en) | Improved deposition repeatability of PECVD films | |
| DE69432175D1 (de) | Verfahren und vorrichtung zur verbrennungs cvd von filmen und beschichtungen | |
| WO2004059707A3 (en) | A method and apparatus for forming a high quality low temperature silicon nitride film | |
| DE50008155D1 (de) | Verfahren und vorrichtung zur plasmabeschichtung von oberflächen | |
| WO2005087974A3 (en) | Cvd processes for the deposition of amorphous carbon films | |
| DE69637982D1 (de) | Verfahren zur herstellung fluorinierter silikon-oxid-schichten unter verwendung von plasma-cvd | |
| DE502006008626D1 (de) | Verfahren zum abscheiden von schichten in einem cvd-reaktor sowie gaseinlassorgan für einen cvd-reaktor | |
| JP2013514959A5 (https=) | ||
| ATE482301T1 (de) | Verfahren zur herstellung von siliziumoxidhaltigen schichten | |
| RU98119152A (ru) | Способ получения гомоэпитаксиальной алмазной тонкой пленки и устройство для его осуществления | |
| DE502006008382D1 (de) | Reaktor und verfahren zur herstellung von silizium | |
| AU2003260448A8 (en) | Titania coatings by plasma cvd at atmospheric pressure | |
| NO20074852L (no) | Primings- og beleggingsprosess | |
| TW200730662A (en) | System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties | |
| WO2004057653A3 (en) | A method and apparatus for forming a high quality low temperature silicon nitride layer | |
| MXPA06002679A (es) | Deposicion de vapor quimico generado por descarga de brillo. | |
| ATE129528T1 (de) | Verfahren zur herstellung von diamantschichten mittels durch mikrowellenplasma unterstützte cvd. | |
| Van Den Oever et al. | N, NH, and NH2 radical densities in a remote Ar–NH3–SiH4 plasma and their role in silicon nitride deposition | |
| ATE448566T1 (de) | Verbesserungen von verfahren zum plasmaätzen |