SI1601813T1 - Postopek za nanos silicija - Google Patents

Postopek za nanos silicija

Info

Publication number
SI1601813T1
SI1601813T1 SI200430905T SI200430905T SI1601813T1 SI 1601813 T1 SI1601813 T1 SI 1601813T1 SI 200430905 T SI200430905 T SI 200430905T SI 200430905 T SI200430905 T SI 200430905T SI 1601813 T1 SI1601813 T1 SI 1601813T1
Authority
SI
Slovenia
Prior art keywords
plasma
chamber
hydrogen
silicon
depositing silicon
Prior art date
Application number
SI200430905T
Other languages
English (en)
Slovenian (sl)
Inventor
Tobias Roschek
Bernd Rech
Original Assignee
Forschungszentrum Juelich Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh filed Critical Forschungszentrum Juelich Gmbh
Publication of SI1601813T1 publication Critical patent/SI1601813T1/sl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
SI200430905T 2003-02-27 2004-01-20 Postopek za nanos silicija SI1601813T1 (sl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10308381A DE10308381B4 (de) 2003-02-27 2003-02-27 Verfahren zur Abscheidung von Silizium
PCT/DE2004/000066 WO2004076713A1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium
EP04703337A EP1601813B1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium

Publications (1)

Publication Number Publication Date
SI1601813T1 true SI1601813T1 (sl) 2009-02-28

Family

ID=32863924

Family Applications (1)

Application Number Title Priority Date Filing Date
SI200430905T SI1601813T1 (sl) 2003-02-27 2004-01-20 Postopek za nanos silicija

Country Status (15)

Country Link
US (1) US7981776B2 (https=)
EP (1) EP1601813B1 (https=)
JP (1) JP4733627B2 (https=)
KR (1) KR101127047B1 (https=)
CN (1) CN1754007A (https=)
AT (1) ATE403763T1 (https=)
AU (1) AU2004215243B2 (https=)
CA (1) CA2517598C (https=)
CY (1) CY1108484T1 (https=)
DE (2) DE10308381B4 (https=)
ES (1) ES2311792T3 (https=)
PT (1) PT1601813E (https=)
RU (1) RU2005129984A (https=)
SI (1) SI1601813T1 (https=)
WO (1) WO2004076713A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216624A (ja) * 2005-02-01 2006-08-17 Mitsubishi Heavy Ind Ltd 太陽電池及び太陽電池の製造方法
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
TWI350006B (en) * 2007-10-05 2011-10-01 Ind Tech Res Inst Plasma enhanced thin film deposition method
WO2009059238A1 (en) 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
JP5005588B2 (ja) 2008-03-14 2012-08-22 東洋自動機株式会社 袋移送及び傾き修正装置
RU2367600C1 (ru) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Способ получения кремния высокой чистоты
DE102008063737A1 (de) * 2008-12-18 2010-06-24 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat
TW201120942A (en) * 2009-12-08 2011-06-16 Ind Tech Res Inst Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition
CN102108494B (zh) * 2009-12-23 2013-01-16 财团法人工业技术研究院 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置
CN102031503B (zh) * 2010-09-29 2012-12-05 理想能源设备(上海)有限公司 硅薄膜的沉积方法
US8642376B2 (en) * 2011-05-16 2014-02-04 Applied Materials, Inc. Methods for depositing a material atop a substrate
DE102014007766B4 (de) * 2014-05-21 2025-10-16 Christian Bauch Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
CN114242833A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 异质结太阳电池的硅片处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334423A (en) * 1993-01-28 1994-08-02 United Solar Systems Corp. Microwave energized process for the preparation of high quality semiconductor material
JPH09232235A (ja) * 1995-02-24 1997-09-05 Mitsui Toatsu Chem Inc 光電変換素子
KR100469134B1 (ko) 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터
US5824940A (en) * 1997-01-27 1998-10-20 Alfred University Ceramic bullet-proof fabric
JPH11233801A (ja) * 1998-02-17 1999-08-27 Canon Inc 微結晶シリコン膜の形成方法、および光起電力素子
JP4335389B2 (ja) * 1999-11-24 2009-09-30 株式会社カネカ シリコン系薄膜光電変換装置の製造方法
JP3857024B2 (ja) * 2000-07-17 2006-12-13 株式会社神戸製鋼所 微結晶シリコン薄膜の形成方法
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
JP4397391B2 (ja) * 2006-10-30 2010-01-13 信越フィルム株式会社 ガスバリア性プラスチックおよびプラスチックフィルムの製造方法

Also Published As

Publication number Publication date
US20060240649A1 (en) 2006-10-26
CA2517598A1 (en) 2004-09-10
DE502004007776D1 (de) 2008-09-18
PT1601813E (pt) 2008-11-13
DE10308381A1 (de) 2004-09-16
AU2004215243A1 (en) 2004-09-10
DE10308381B4 (de) 2012-08-16
EP1601813A1 (de) 2005-12-07
JP2006519482A (ja) 2006-08-24
US7981776B2 (en) 2011-07-19
CA2517598C (en) 2012-05-15
CY1108484T1 (el) 2014-04-09
ES2311792T3 (es) 2009-02-16
AU2004215243B2 (en) 2009-12-03
ATE403763T1 (de) 2008-08-15
JP4733627B2 (ja) 2011-07-27
KR101127047B1 (ko) 2012-04-23
RU2005129984A (ru) 2006-05-10
WO2004076713A1 (de) 2004-09-10
CN1754007A (zh) 2006-03-29
KR20050114218A (ko) 2005-12-05
EP1601813B1 (de) 2008-08-06

Similar Documents

Publication Publication Date Title
SI1601813T1 (sl) Postopek za nanos silicija
GB0406049D0 (en) Surface coatings
SG143230A1 (en) Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
WO2003035927A3 (en) Gas delivery apparatus for atomic layer deposition
TW362118B (en) Method for depositing amorphous SiNC coatings
WO2005104634A3 (en) Method and system for performing atomic layer deposition
TW200629389A (en) Method for treating a substrate
TW200500485A (en) CVD method and apparatus for forming silicon nitride film
TW200605196A (en) Improved deposition repeatability of PECVD films
TW200737315A (en) Method of forming a silicon layer and method of manufacturing a display substrate by using the same
AU1925401A (en) Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
WO2010123707A3 (en) Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
TW200600605A (en) Liquid precursors for the CVD deposition of amorphous carbon films
TW200741869A (en) Method of seasoning film-forming apparatus
EP0936284A3 (en) Method and apparatus for producing thin films
WO2005036593A3 (en) Deposition of silicon-containing films from hexachlorodisilane
TW200501241A (en) Method for cleaning thin-film forming apparatus
WO2004070788A3 (en) Method for depositing a low dielectric constant film
WO2009112730A3 (fr) PROCEDE DE RECYCLAGE DE SILANE (SiH4)
RU98119152A (ru) Способ получения гомоэпитаксиальной алмазной тонкой пленки и устройство для его осуществления
KR20180116819A (ko) 태양광 플라스마 화학 증착 공정 중 그라파이트보트에 질화물을 증착하는 방법
JP2006519482A5 (https=)
WO2005049228A3 (en) Glow discharge-generated chemical vapor deposition
TW200623240A (en) Remote chamber methods for removing surface deposits
TW200616085A (en) Method and apparatus for forming silicon nitride film