DE10203955A1 - Hochfrequenz-MOS-Schalter - Google Patents
Hochfrequenz-MOS-SchalterInfo
- Publication number
- DE10203955A1 DE10203955A1 DE2002103955 DE10203955A DE10203955A1 DE 10203955 A1 DE10203955 A1 DE 10203955A1 DE 2002103955 DE2002103955 DE 2002103955 DE 10203955 A DE10203955 A DE 10203955A DE 10203955 A1 DE10203955 A1 DE 10203955A1
- Authority
- DE
- Germany
- Prior art keywords
- coupled
- impedance
- transistor
- node
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 32
- 230000004913 activation Effects 0.000 claims abstract 3
- 230000005540 biological transmission Effects 0.000 claims description 67
- 230000008054 signal transmission Effects 0.000 claims description 27
- 230000003071 parasitic effect Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000007363 regulatory process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 230000004044 response Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- PCLIRWBVOVZTOK-UHFFFAOYSA-M 2-(1-methylpyrrolidin-1-ium-1-yl)ethyl 2-hydroxy-2,2-diphenylacetate;iodide Chemical compound [I-].C=1C=CC=CC=1C(O)(C=1C=CC=CC=1)C(=O)OCC[N+]1(C)CCCC1 PCLIRWBVOVZTOK-UHFFFAOYSA-M 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000802 evaporation-induced self-assembly Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 108010075465 minican Proteins 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 230000001850 reproductive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/780,199 US6396325B2 (en) | 1999-12-03 | 2001-02-09 | High frequency MOSFET switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10203955A1 true DE10203955A1 (de) | 2002-08-22 |
Family
ID=25118919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2002103955 Withdrawn DE10203955A1 (de) | 2001-02-09 | 2002-02-01 | Hochfrequenz-MOS-Schalter |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6396325B2 (enExample) |
| JP (1) | JP4230704B2 (enExample) |
| KR (1) | KR100886011B1 (enExample) |
| DE (1) | DE10203955A1 (enExample) |
| TW (1) | TW565999B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015105113B4 (de) * | 2014-04-02 | 2021-07-01 | Infineon Technologies Ag | System und Verfahren zum Ansteuern eines Hochfrequenzschalters |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6563367B1 (en) * | 2000-08-16 | 2003-05-13 | Altera Corporation | Interconnection switch structures |
| US6661253B1 (en) | 2000-08-16 | 2003-12-09 | Altera Corporation | Passgate structures for use in low-voltage applications |
| US7027072B1 (en) | 2000-10-13 | 2006-04-11 | Silicon Graphics, Inc. | Method and system for spatially compositing digital video images with a tile pattern library |
| US7358974B2 (en) | 2001-01-29 | 2008-04-15 | Silicon Graphics, Inc. | Method and system for minimizing an amount of data needed to test data against subarea boundaries in spatially composited digital video |
| US7145378B2 (en) * | 2001-07-16 | 2006-12-05 | Fairchild Semiconductor Corporation | Configurable switch with selectable level shifting |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| TW557435B (en) * | 2002-05-08 | 2003-10-11 | Via Tech Inc | Portable computer capable of displaying input image signal |
| US7034837B2 (en) * | 2003-05-05 | 2006-04-25 | Silicon Graphics, Inc. | Method, system, and computer program product for determining a structure of a graphics compositor tree |
| EP1695439A1 (de) * | 2003-12-17 | 2006-08-30 | Rohde & Schwarz GmbH & Co. KG | Elektronischer hochfrequenz-schalter und eichleitung mit solchen hochfrequenz-schaltern |
| US7516029B2 (en) | 2004-06-09 | 2009-04-07 | Rambus, Inc. | Communication channel calibration using feedback |
| JP4659826B2 (ja) | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Ｒｆフロントエンド集積回路 |
| US7292065B2 (en) * | 2004-08-03 | 2007-11-06 | Altera Corporation | Enhanced passgate structures for reducing leakage current |
| US7274242B2 (en) * | 2004-11-02 | 2007-09-25 | Rambus Inc. | Pass transistors with minimized capacitive loading |
| JP4599225B2 (ja) * | 2005-05-26 | 2010-12-15 | 株式会社東芝 | スイッチング回路 |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7259589B1 (en) | 2005-09-16 | 2007-08-21 | Pericom Semiconductor Corp. | Visual or multimedia interface bus switch with level-shifted ground and input protection against non-compliant transmission-minimized differential signaling (TMDS) transmitter |
| US7890063B2 (en) * | 2006-10-03 | 2011-02-15 | Samsung Electro-Mechanics | Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure |
| US7843280B2 (en) * | 2006-12-01 | 2010-11-30 | Samsung Electro-Mechanics Company | Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure |
| DE102006058169A1 (de) * | 2006-12-09 | 2008-06-19 | Atmel Germany Gmbh | Integrierter Halbleiterschaltkreis |
| JP5151145B2 (ja) | 2006-12-26 | 2013-02-27 | ソニー株式会社 | スイッチ回路、可変コンデンサ回路およびそのｉｃ |
| US7738841B2 (en) * | 2007-09-14 | 2010-06-15 | Samsung Electro-Mechanics | Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure |
| US8299835B2 (en) * | 2008-02-01 | 2012-10-30 | Sensor Electronic Technology, Inc. | Radio-frequency switch circuit with separately controlled shunt switching device |
| EP2760136B1 (en) | 2008-02-28 | 2018-05-09 | Peregrine Semiconductor Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
| US7928794B2 (en) * | 2008-07-21 | 2011-04-19 | Analog Devices, Inc. | Method and apparatus for a dynamically self-bootstrapped switch |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US8514008B2 (en) * | 2010-07-28 | 2013-08-20 | Qualcomm, Incorporated | RF isolation switch circuit |
| US8115518B1 (en) * | 2010-08-16 | 2012-02-14 | Analog Devices, Inc. | Integrated circuit for reducing nonlinearity in sampling networks |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| JP6701451B2 (ja) * | 2017-07-03 | 2020-05-27 | 三菱電機株式会社 | 高周波スイッチ |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3872325A (en) * | 1973-10-17 | 1975-03-18 | Rca Corp | R-F switching circuit |
| DE2851789C2 (de) * | 1978-11-30 | 1981-10-01 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Schaltung zum Schalten und Übertragen von Wechselspannungen |
| US4508983A (en) * | 1983-02-10 | 1985-04-02 | Motorola, Inc. | MOS Analog switch driven by complementary, minimally skewed clock signals |
| US4787686A (en) * | 1985-12-20 | 1988-11-29 | Raytheon Company | Monolithic programmable attenuator |
| JPH0773202B2 (ja) * | 1989-12-28 | 1995-08-02 | 三菱電機株式会社 | 半導体集積回路 |
| JPH0595266A (ja) * | 1991-09-30 | 1993-04-16 | Rohm Co Ltd | 伝送ゲート |
| US5461265A (en) * | 1992-05-25 | 1995-10-24 | Matsushita Electric Industrial Co., Ltd. | High-frequency variable impedance circuit having improved linearity of operating characteristics |
| JP3198808B2 (ja) * | 1994-06-30 | 2001-08-13 | 株式会社村田製作所 | 高周波スイッチ |
| US5903178A (en) * | 1994-12-16 | 1999-05-11 | Matsushita Electronics Corporation | Semiconductor integrated circuit |
| JPH08204530A (ja) * | 1995-01-23 | 1996-08-09 | Sony Corp | スイツチ回路 |
| US5883541A (en) * | 1997-03-05 | 1999-03-16 | Nec Corporation | High frequency switching circuit |
| JP3258930B2 (ja) * | 1997-04-24 | 2002-02-18 | 東芝マイクロエレクトロニクス株式会社 | トランスミッション・ゲート |
| US6052000A (en) * | 1997-04-30 | 2000-04-18 | Texas Instruments Incorporated | MOS sample and hold circuit |
| US5900657A (en) * | 1997-05-19 | 1999-05-04 | National Semiconductor Corp. | MOS switch that reduces clock feed through in a switched capacitor circuit |
| JP3310203B2 (ja) * | 1997-07-25 | 2002-08-05 | 株式会社東芝 | 高周波スイッチ装置 |
| US6281737B1 (en) * | 1998-11-20 | 2001-08-28 | International Business Machines Corporation | Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor |
| US6236259B1 (en) * | 1999-10-04 | 2001-05-22 | Fairchild Semiconductor Corporation | Active undershoot hardened fet switch |
-
2001
- 2001-02-09 US US09/780,199 patent/US6396325B2/en not_active Expired - Lifetime
-
2002
- 2002-01-29 TW TW091101484A patent/TW565999B/zh not_active IP Right Cessation
- 2002-01-31 KR KR1020020005562A patent/KR100886011B1/ko not_active Expired - Lifetime
- 2002-02-01 DE DE2002103955 patent/DE10203955A1/de not_active Withdrawn
- 2002-02-08 JP JP2002031997A patent/JP4230704B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015105113B4 (de) * | 2014-04-02 | 2021-07-01 | Infineon Technologies Ag | System und Verfahren zum Ansteuern eines Hochfrequenzschalters |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100886011B1 (ko) | 2009-02-26 |
| JP4230704B2 (ja) | 2009-02-25 |
| KR20020066182A (ko) | 2002-08-14 |
| US20010007430A1 (en) | 2001-07-12 |
| TW565999B (en) | 2003-12-11 |
| JP2002314388A (ja) | 2002-10-25 |
| US6396325B2 (en) | 2002-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10203955A1 (de) | Hochfrequenz-MOS-Schalter | |
| DE69737731T2 (de) | Integrierte Schaltung mit adaptivem Eingangs/Ausgangstor | |
| DE102012208124B4 (de) | Ringing-Unterdrückungsschaltung | |
| DE69718221T2 (de) | Treiberschaltungsvorrichtung | |
| DE60115668T2 (de) | System und Verfahren für einen Überraschungsabschluss durch Signalauslöschung | |
| DE69635295T2 (de) | Leitungstreiber mit Impulsformer | |
| DE4426841B4 (de) | Signalübertragungseinrichtung | |
| DE102005060042B4 (de) | Treiber für Niederspannungsdifferenzsignale, der Zweige mit Serienwiderständen enthält | |
| DE10314308B4 (de) | Chipintegrierte Abschlussvorrichtung und Halbleiterbaustein sowie zugehöriges Steuerverfahren | |
| DE19711328C2 (de) | Schaltung zur Pegelverschiebung | |
| DE102009008182B4 (de) | Empfangsvorrichtung mit Impedanzsteuerschaltung | |
| DE69602650T2 (de) | Treiberschaltung zur Schnittstellenbildung zwischen integrierten Schaltungen und Übertragungsleitungen | |
| DE60012121T2 (de) | Verfahren und schaltungsanordnung zur pufferung von taktsignalen mit hoher geschwindigkeit | |
| DE69501285T2 (de) | Stromschaltende Schaltung | |
| DE19856850A1 (de) | Hochspannungs-Ausgangsklemmschaltkreis für Anwendungen mit Niederspannungs-Differenzausschlag im Fall der Überlastung | |
| DE102013222786A1 (de) | Teilnehmerstation für ein Bussystem und Verfahren zur Reduzierung von leitungsgebundenen Emissionen in einem Bussystem | |
| DE102020208635A1 (de) | Differenzsignal-übertragungsschaltung | |
| DE102020104869B3 (de) | Schaltungsanordnung mit galvanischer trennung | |
| EP0823148B1 (de) | Gtl-ausgangsverstärker zum einkoppeln eines am eingang anliegenden eingangssignales in eine am ausgang anliegende übertragungsleitung | |
| DE69426720T2 (de) | Halbleiterschaltungsanordnung mit einer Kombination von CMOS- und bipolaren Schaltungen | |
| DE69934551T2 (de) | Sende-Empfangstreiber mit programmierbarer Flankensteilheit unabhängig vom Herstellungsverfahren , der Speisespannung und der Temperatur | |
| DE19938907A1 (de) | Schaltung und Verfahren zum Verringern von Schaltstörungen | |
| DE69822376T2 (de) | Ausgangsschaltung mit niedrigem Signalhub | |
| DE69504265T2 (de) | Ausgangschaltung für eine Sende-/Empfangslogik vom Typ "gunning" | |
| DE10047647A1 (de) | Hochfrequenz-Mos-Schalter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20120901 |