JP4230704B2 - 高周波ｍｏｓｆｅｔスイッチ - Google Patents

高周波ｍｏｓｆｅｔスイッチ Download PDF

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Publication number
JP4230704B2
JP4230704B2 JP2002031997A JP2002031997A JP4230704B2 JP 4230704 B2 JP4230704 B2 JP 4230704B2 JP 2002031997 A JP2002031997 A JP 2002031997A JP 2002031997 A JP2002031997 A JP 2002031997A JP 4230704 B2 JP4230704 B2 JP 4230704B2
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Japan
Prior art keywords
coupled
node
transfer transistor
impedance
switch circuit
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JP2002031997A
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Japanese (ja)
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JP2002314388A5 (enExample
JP2002314388A (ja
Inventor
トレノー・エフ・グッデル
Original Assignee
フェアチャイルド・セミコンダクター・コーポレーション
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Publication of JP2002314388A5 publication Critical patent/JP2002314388A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

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  • Electronic Switches (AREA)
JP2002031997A 2001-02-09 2002-02-08 高周波ｍｏｓｆｅｔスイッチ Expired - Fee Related JP4230704B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/780,199 US6396325B2 (en) 1999-12-03 2001-02-09 High frequency MOSFET switch
US09/780199 2001-02-09

Publications (3)

Publication Number Publication Date
JP2002314388A JP2002314388A (ja) 2002-10-25
JP2002314388A5 JP2002314388A5 (enExample) 2005-08-18
JP4230704B2 true JP4230704B2 (ja) 2009-02-25

Family

ID=25118919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002031997A Expired - Fee Related JP4230704B2 (ja) 2001-02-09 2002-02-08 高周波ｍｏｓｆｅｔスイッチ

Country Status (5)

Country Link
US (1) US6396325B2 (enExample)
JP (1) JP4230704B2 (enExample)
KR (1) KR100886011B1 (enExample)
DE (1) DE10203955A1 (enExample)
TW (1) TW565999B (enExample)

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US7358974B2 (en) 2001-01-29 2008-04-15 Silicon Graphics, Inc. Method and system for minimizing an amount of data needed to test data against subarea boundaries in spatially composited digital video
US7145378B2 (en) * 2001-07-16 2006-12-05 Fairchild Semiconductor Corporation Configurable switch with selectable level shifting
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
TW557435B (en) * 2002-05-08 2003-10-11 Via Tech Inc Portable computer capable of displaying input image signal
US7034837B2 (en) * 2003-05-05 2006-04-25 Silicon Graphics, Inc. Method, system, and computer program product for determining a structure of a graphics compositor tree
EP1695439A1 (de) * 2003-12-17 2006-08-30 Rohde & Schwarz GmbH & Co. KG Elektronischer hochfrequenz-schalter und eichleitung mit solchen hochfrequenz-schaltern
US7516029B2 (en) 2004-06-09 2009-04-07 Rambus, Inc. Communication channel calibration using feedback
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
US7292065B2 (en) * 2004-08-03 2007-11-06 Altera Corporation Enhanced passgate structures for reducing leakage current
US7274242B2 (en) * 2004-11-02 2007-09-25 Rambus Inc. Pass transistors with minimized capacitive loading
JP4599225B2 (ja) * 2005-05-26 2010-12-15 株式会社東芝 スイッチング回路
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7259589B1 (en) 2005-09-16 2007-08-21 Pericom Semiconductor Corp. Visual or multimedia interface bus switch with level-shifted ground and input protection against non-compliant transmission-minimized differential signaling (TMDS) transmitter
US7890063B2 (en) * 2006-10-03 2011-02-15 Samsung Electro-Mechanics Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
US7843280B2 (en) * 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
DE102006058169A1 (de) * 2006-12-09 2008-06-19 Atmel Germany Gmbh Integrierter Halbleiterschaltkreis
JP5151145B2 (ja) 2006-12-26 2013-02-27 ソニー株式会社 スイッチ回路、可変コンデンサ回路およびそのｉｃ
US7738841B2 (en) * 2007-09-14 2010-06-15 Samsung Electro-Mechanics Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
US8299835B2 (en) * 2008-02-01 2012-10-30 Sensor Electronic Technology, Inc. Radio-frequency switch circuit with separately controlled shunt switching device
EP2760136B1 (en) 2008-02-28 2018-05-09 Peregrine Semiconductor Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US7928794B2 (en) * 2008-07-21 2011-04-19 Analog Devices, Inc. Method and apparatus for a dynamically self-bootstrapped switch
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
US8115518B1 (en) * 2010-08-16 2012-02-14 Analog Devices, Inc. Integrated circuit for reducing nonlinearity in sampling networks
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9966946B2 (en) * 2014-04-02 2018-05-08 Infineon Technologies Ag System and method for a driving a radio frequency switch
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
JP6701451B2 (ja) * 2017-07-03 2020-05-27 三菱電機株式会社 高周波スイッチ
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

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DE2851789C2 (de) * 1978-11-30 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schaltung zum Schalten und Übertragen von Wechselspannungen
US4508983A (en) * 1983-02-10 1985-04-02 Motorola, Inc. MOS Analog switch driven by complementary, minimally skewed clock signals
US4787686A (en) * 1985-12-20 1988-11-29 Raytheon Company Monolithic programmable attenuator
JPH0773202B2 (ja) * 1989-12-28 1995-08-02 三菱電機株式会社 半導体集積回路
JPH0595266A (ja) * 1991-09-30 1993-04-16 Rohm Co Ltd 伝送ゲート
US5461265A (en) * 1992-05-25 1995-10-24 Matsushita Electric Industrial Co., Ltd. High-frequency variable impedance circuit having improved linearity of operating characteristics
JP3198808B2 (ja) * 1994-06-30 2001-08-13 株式会社村田製作所 高周波スイッチ
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
US5883541A (en) * 1997-03-05 1999-03-16 Nec Corporation High frequency switching circuit
JP3258930B2 (ja) * 1997-04-24 2002-02-18 東芝マイクロエレクトロニクス株式会社 トランスミッション・ゲート
US6052000A (en) * 1997-04-30 2000-04-18 Texas Instruments Incorporated MOS sample and hold circuit
US5900657A (en) * 1997-05-19 1999-05-04 National Semiconductor Corp. MOS switch that reduces clock feed through in a switched capacitor circuit
JP3310203B2 (ja) * 1997-07-25 2002-08-05 株式会社東芝 高周波スイッチ装置
US6281737B1 (en) * 1998-11-20 2001-08-28 International Business Machines Corporation Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor
US6236259B1 (en) * 1999-10-04 2001-05-22 Fairchild Semiconductor Corporation Active undershoot hardened fet switch

Also Published As

Publication number Publication date
DE10203955A1 (de) 2002-08-22
KR100886011B1 (ko) 2009-02-26
KR20020066182A (ko) 2002-08-14
US20010007430A1 (en) 2001-07-12
TW565999B (en) 2003-12-11
JP2002314388A (ja) 2002-10-25
US6396325B2 (en) 2002-05-28

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