KR100886011B1 - 고주파 ｍｏｓｆｅｔ 스위치 - Google Patents

고주파 ｍｏｓｆｅｔ 스위치 Download PDF

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Publication number
KR100886011B1
KR100886011B1 KR1020020005562A KR20020005562A KR100886011B1 KR 100886011 B1 KR100886011 B1 KR 100886011B1 KR 1020020005562 A KR1020020005562 A KR 1020020005562A KR 20020005562 A KR20020005562 A KR 20020005562A KR 100886011 B1 KR100886011 B1 KR 100886011B1
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KR
South Korea
Prior art keywords
node
impedance
transfer transistor
inverter
bulk
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Expired - Lifetime
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KR1020020005562A
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English (en)
Korean (ko)
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KR20020066182A (ko
Inventor
구델트레노에프.
Original Assignee
페어차일드 세미컨덕터 코포레이션
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Publication of KR20020066182A publication Critical patent/KR20020066182A/ko
Application granted granted Critical
Publication of KR100886011B1 publication Critical patent/KR100886011B1/ko
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

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  • Electronic Switches (AREA)
KR1020020005562A 2001-02-09 2002-01-31 고주파 ｍｏｓｆｅｔ 스위치 Expired - Lifetime KR100886011B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/780,199 2001-02-09
US09/780,199 US6396325B2 (en) 1999-12-03 2001-02-09 High frequency MOSFET switch

Publications (2)

Publication Number Publication Date
KR20020066182A KR20020066182A (ko) 2002-08-14
KR100886011B1 true KR100886011B1 (ko) 2009-02-26

Family

ID=25118919

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020005562A Expired - Lifetime KR100886011B1 (ko) 2001-02-09 2002-01-31 고주파 ｍｏｓｆｅｔ 스위치

Country Status (5)

Country Link
US (1) US6396325B2 (enExample)
JP (1) JP4230704B2 (enExample)
KR (1) KR100886011B1 (enExample)
DE (1) DE10203955A1 (enExample)
TW (1) TW565999B (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661253B1 (en) 2000-08-16 2003-12-09 Altera Corporation Passgate structures for use in low-voltage applications
US6563367B1 (en) * 2000-08-16 2003-05-13 Altera Corporation Interconnection switch structures
US7027072B1 (en) 2000-10-13 2006-04-11 Silicon Graphics, Inc. Method and system for spatially compositing digital video images with a tile pattern library
US7358974B2 (en) 2001-01-29 2008-04-15 Silicon Graphics, Inc. Method and system for minimizing an amount of data needed to test data against subarea boundaries in spatially composited digital video
US7145378B2 (en) * 2001-07-16 2006-12-05 Fairchild Semiconductor Corporation Configurable switch with selectable level shifting
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
TW557435B (en) * 2002-05-08 2003-10-11 Via Tech Inc Portable computer capable of displaying input image signal
US7034837B2 (en) * 2003-05-05 2006-04-25 Silicon Graphics, Inc. Method, system, and computer program product for determining a structure of a graphics compositor tree
US7489179B2 (en) * 2003-12-17 2009-02-10 Rohde & Schwarz Gmbh & Co., Kg Electronic high-frequency switch and attenuator with said high-frequency switches
US7516029B2 (en) 2004-06-09 2009-04-07 Rambus, Inc. Communication channel calibration using feedback
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
US7292065B2 (en) * 2004-08-03 2007-11-06 Altera Corporation Enhanced passgate structures for reducing leakage current
US7274242B2 (en) * 2004-11-02 2007-09-25 Rambus Inc. Pass transistors with minimized capacitive loading
JP4599225B2 (ja) * 2005-05-26 2010-12-15 株式会社東芝 スイッチング回路
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7259589B1 (en) 2005-09-16 2007-08-21 Pericom Semiconductor Corp. Visual or multimedia interface bus switch with level-shifted ground and input protection against non-compliant transmission-minimized differential signaling (TMDS) transmitter
US7890063B2 (en) * 2006-10-03 2011-02-15 Samsung Electro-Mechanics Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
US7843280B2 (en) * 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
DE102006058169A1 (de) * 2006-12-09 2008-06-19 Atmel Germany Gmbh Integrierter Halbleiterschaltkreis
JP5151145B2 (ja) 2006-12-26 2013-02-27 ソニー株式会社 スイッチ回路、可変コンデンサ回路およびそのｉｃ
US7738841B2 (en) * 2007-09-14 2010-06-15 Samsung Electro-Mechanics Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
US8299835B2 (en) * 2008-02-01 2012-10-30 Sensor Electronic Technology, Inc. Radio-frequency switch circuit with separately controlled shunt switching device
US9024700B2 (en) 2008-02-28 2015-05-05 Peregrine Semiconductor Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US7928794B2 (en) * 2008-07-21 2011-04-19 Analog Devices, Inc. Method and apparatus for a dynamically self-bootstrapped switch
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
US8115518B1 (en) * 2010-08-16 2012-02-14 Analog Devices, Inc. Integrated circuit for reducing nonlinearity in sampling networks
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9966946B2 (en) * 2014-04-02 2018-05-08 Infineon Technologies Ag System and method for a driving a radio frequency switch
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
JP6701451B2 (ja) * 2017-07-03 2020-05-27 三菱電機株式会社 高周波スイッチ
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4508983A (en) * 1983-02-10 1985-04-02 Motorola, Inc. MOS Analog switch driven by complementary, minimally skewed clock signals
US6052000A (en) * 1997-04-30 2000-04-18 Texas Instruments Incorporated MOS sample and hold circuit
US6175268B1 (en) * 1997-05-19 2001-01-16 National Semiconductor Corporation MOS switch that reduces clock feedthrough in a switched capacitor circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3872325A (en) * 1973-10-17 1975-03-18 Rca Corp R-F switching circuit
DE2851789C2 (de) * 1978-11-30 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Schaltung zum Schalten und Übertragen von Wechselspannungen
US4787686A (en) * 1985-12-20 1988-11-29 Raytheon Company Monolithic programmable attenuator
JPH0773202B2 (ja) * 1989-12-28 1995-08-02 三菱電機株式会社 半導体集積回路
JPH0595266A (ja) * 1991-09-30 1993-04-16 Rohm Co Ltd 伝送ゲート
US5461265A (en) * 1992-05-25 1995-10-24 Matsushita Electric Industrial Co., Ltd. High-frequency variable impedance circuit having improved linearity of operating characteristics
JP3198808B2 (ja) * 1994-06-30 2001-08-13 株式会社村田製作所 高周波スイッチ
US5903178A (en) * 1994-12-16 1999-05-11 Matsushita Electronics Corporation Semiconductor integrated circuit
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
US5883541A (en) * 1997-03-05 1999-03-16 Nec Corporation High frequency switching circuit
JP3258930B2 (ja) * 1997-04-24 2002-02-18 東芝マイクロエレクトロニクス株式会社 トランスミッション・ゲート
JP3310203B2 (ja) * 1997-07-25 2002-08-05 株式会社東芝 高周波スイッチ装置
US6281737B1 (en) * 1998-11-20 2001-08-28 International Business Machines Corporation Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor
US6236259B1 (en) * 1999-10-04 2001-05-22 Fairchild Semiconductor Corporation Active undershoot hardened fet switch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4508983A (en) * 1983-02-10 1985-04-02 Motorola, Inc. MOS Analog switch driven by complementary, minimally skewed clock signals
US6052000A (en) * 1997-04-30 2000-04-18 Texas Instruments Incorporated MOS sample and hold circuit
US6175268B1 (en) * 1997-05-19 2001-01-16 National Semiconductor Corporation MOS switch that reduces clock feedthrough in a switched capacitor circuit

Also Published As

Publication number Publication date
DE10203955A1 (de) 2002-08-22
US6396325B2 (en) 2002-05-28
JP4230704B2 (ja) 2009-02-25
JP2002314388A (ja) 2002-10-25
US20010007430A1 (en) 2001-07-12
KR20020066182A (ko) 2002-08-14
TW565999B (en) 2003-12-11

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