TW565999B - High frequency MOSFET switch - Google Patents

High frequency MOSFET switch Download PDF

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Publication number
TW565999B
TW565999B TW091101484A TW91101484A TW565999B TW 565999 B TW565999 B TW 565999B TW 091101484 A TW091101484 A TW 091101484A TW 91101484 A TW91101484 A TW 91101484A TW 565999 B TW565999 B TW 565999B
Authority
TW
Taiwan
Prior art keywords
node
impedance
transistor
impedance element
mos
Prior art date
Application number
TW091101484A
Other languages
English (en)
Chinese (zh)
Inventor
Trenor F Goodell
Original Assignee
Fairchild Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor filed Critical Fairchild Semiconductor
Application granted granted Critical
Publication of TW565999B publication Critical patent/TW565999B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Electronic Switches (AREA)
TW091101484A 2001-02-09 2002-01-29 High frequency MOSFET switch TW565999B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/780,199 US6396325B2 (en) 1999-12-03 2001-02-09 High frequency MOSFET switch

Publications (1)

Publication Number Publication Date
TW565999B true TW565999B (en) 2003-12-11

Family

ID=25118919

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091101484A TW565999B (en) 2001-02-09 2002-01-29 High frequency MOSFET switch

Country Status (5)

Country Link
US (1) US6396325B2 (enExample)
JP (1) JP4230704B2 (enExample)
KR (1) KR100886011B1 (enExample)
DE (1) DE10203955A1 (enExample)
TW (1) TW565999B (enExample)

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US7292065B2 (en) * 2004-08-03 2007-11-06 Altera Corporation Enhanced passgate structures for reducing leakage current
US7274242B2 (en) * 2004-11-02 2007-09-25 Rambus Inc. Pass transistors with minimized capacitive loading
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US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7259589B1 (en) 2005-09-16 2007-08-21 Pericom Semiconductor Corp. Visual or multimedia interface bus switch with level-shifted ground and input protection against non-compliant transmission-minimized differential signaling (TMDS) transmitter
US7890063B2 (en) * 2006-10-03 2011-02-15 Samsung Electro-Mechanics Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
US7843280B2 (en) * 2006-12-01 2010-11-30 Samsung Electro-Mechanics Company Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
DE102006058169A1 (de) * 2006-12-09 2008-06-19 Atmel Germany Gmbh Integrierter Halbleiterschaltkreis
JP5151145B2 (ja) 2006-12-26 2013-02-27 ソニー株式会社 スイッチ回路、可変コンデンサ回路およびそのｉｃ
US7738841B2 (en) * 2007-09-14 2010-06-15 Samsung Electro-Mechanics Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
US8299835B2 (en) * 2008-02-01 2012-10-30 Sensor Electronic Technology, Inc. Radio-frequency switch circuit with separately controlled shunt switching device
EP2760136B1 (en) 2008-02-28 2018-05-09 Peregrine Semiconductor Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US7928794B2 (en) * 2008-07-21 2011-04-19 Analog Devices, Inc. Method and apparatus for a dynamically self-bootstrapped switch
US8723260B1 (en) 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
US8115518B1 (en) * 2010-08-16 2012-02-14 Analog Devices, Inc. Integrated circuit for reducing nonlinearity in sampling networks
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US20150236748A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Devices and Methods for Duplexer Loss Reduction
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9966946B2 (en) * 2014-04-02 2018-05-08 Infineon Technologies Ag System and method for a driving a radio frequency switch
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
JP6701451B2 (ja) * 2017-07-03 2020-05-27 三菱電機株式会社 高周波スイッチ
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

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Also Published As

Publication number Publication date
DE10203955A1 (de) 2002-08-22
KR100886011B1 (ko) 2009-02-26
JP4230704B2 (ja) 2009-02-25
KR20020066182A (ko) 2002-08-14
US20010007430A1 (en) 2001-07-12
JP2002314388A (ja) 2002-10-25
US6396325B2 (en) 2002-05-28

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees