DE102014218389B4 - Halbleitermodul - Google Patents

Halbleitermodul Download PDF

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Publication number
DE102014218389B4
DE102014218389B4 DE102014218389.8A DE102014218389A DE102014218389B4 DE 102014218389 B4 DE102014218389 B4 DE 102014218389B4 DE 102014218389 A DE102014218389 A DE 102014218389A DE 102014218389 B4 DE102014218389 B4 DE 102014218389B4
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Prior art keywords
base plate
insulating substrate
positioning wire
wire joining
semiconductor module
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DE102014218389.8A
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German (de)
English (en)
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DE102014218389A1 (de
Inventor
Takami c/o Mitsubishi Electric Corp. Otsuki
Rei c/o Mitsubishi Electric Corp. Yoneyama
Akihiko c/o Wave Technology Inc. Yamashita
Yoshitaka c/o Mitsubishi Electric Corp. Kimura
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/37—Effects of the manufacturing process
    • H01L2924/3701—Effects of the manufacturing process increased through put

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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JPH01281760A (ja) * 1988-05-07 1989-11-13 Mitsubishi Electric Corp 半導体装置
JP2000031358A (ja) * 1998-07-08 2000-01-28 Sansha Electric Mfg Co Ltd 電力用半導体モジュール
JP2013161961A (ja) * 2012-02-06 2013-08-19 Calsonic Kansei Corp 半導体モジュールの製造方法

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JPH02266557A (ja) * 1989-04-06 1990-10-31 Mitsubishi Electric Corp 半導体装置
JPH10321651A (ja) * 1997-05-19 1998-12-04 Mitsubishi Electric Corp 半導体装置
JP3347279B2 (ja) * 1997-12-19 2002-11-20 三菱電機株式会社 半導体装置およびその製造方法
JP2000068446A (ja) * 1998-08-25 2000-03-03 Hitachi Ltd パワー半導体モジュール
JP3619708B2 (ja) * 1999-06-02 2005-02-16 株式会社日立製作所 パワー半導体モジュール
US6774465B2 (en) * 2001-10-05 2004-08-10 Fairchild Korea Semiconductor, Ltd. Semiconductor power package module
DE102009002992B4 (de) * 2009-05-11 2014-10-30 Infineon Technologies Ag Leistungshalbleitermodulanordnung mit eindeutig und verdrehsicher auf einem Kühlkörper montierbarem Leistungshalbleitermodul und Montageverfahren
EP2442358A4 (en) * 2009-06-10 2014-04-16 Toyota Motor Co Ltd SEMICONDUCTOR COMPONENT
JP5884291B2 (ja) * 2011-04-20 2016-03-15 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板ユニット
JP5716637B2 (ja) * 2011-11-04 2015-05-13 住友電気工業株式会社 半導体モジュール及び半導体モジュールの製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01281760A (ja) * 1988-05-07 1989-11-13 Mitsubishi Electric Corp 半導体装置
JP2000031358A (ja) * 1998-07-08 2000-01-28 Sansha Electric Mfg Co Ltd 電力用半導体モジュール
JP2013161961A (ja) * 2012-02-06 2013-08-19 Calsonic Kansei Corp 半導体モジュールの製造方法

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