DE102012224354B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

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Publication number
DE102012224354B4
DE102012224354B4 DE102012224354.2A DE102012224354A DE102012224354B4 DE 102012224354 B4 DE102012224354 B4 DE 102012224354B4 DE 102012224354 A DE102012224354 A DE 102012224354A DE 102012224354 B4 DE102012224354 B4 DE 102012224354B4
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DE
Germany
Prior art keywords
electrode
comb finger
semiconductor device
internal electrode
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102012224354.2A
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German (de)
English (en)
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DE102012224354A1 (de
Inventor
Noboru Miyamoto
Yoshikazu Tsunoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of DE102012224354A1 publication Critical patent/DE102012224354A1/de
Application granted granted Critical
Publication of DE102012224354B4 publication Critical patent/DE102012224354B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49589—Capacitor integral with or on the leadframe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE102012224354.2A 2012-03-09 2012-12-21 Halbleitervorrichtung Active DE102012224354B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-053061 2012-03-09
JP2012053061A JP5754398B2 (ja) 2012-03-09 2012-03-09 半導体装置

Publications (2)

Publication Number Publication Date
DE102012224354A1 DE102012224354A1 (de) 2013-09-12
DE102012224354B4 true DE102012224354B4 (de) 2021-09-30

Family

ID=49029640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012224354.2A Active DE102012224354B4 (de) 2012-03-09 2012-12-21 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US8754462B2 (enExample)
JP (1) JP5754398B2 (enExample)
CN (1) CN103311191B (enExample)
DE (1) DE102012224354B4 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012005299T5 (de) * 2012-03-19 2014-09-04 Mitsubishi Electric Corporation Halbleitervorrichtung und Halbleitersystem
JP6169250B2 (ja) * 2014-03-06 2017-07-26 三菱電機株式会社 電力用半導体装置
CN113748509B (zh) * 2019-04-24 2024-04-30 罗姆股份有限公司 半导体装置
JP7365405B2 (ja) * 2019-04-24 2023-10-19 ローム株式会社 半導体装置
JP2021182575A (ja) * 2020-05-18 2021-11-25 現代自動車株式会社Hyundai Motor Company 半導体装置内部スナバ回路接続構造及びこれを用いたパワーモジュール構造
US11538748B2 (en) * 2020-06-04 2022-12-27 Mediatek Singapore Pte. Ltd. Semiconductor device with capacitor element
JP6841367B1 (ja) * 2020-07-14 2021-03-10 富士電機株式会社 半導体モジュール、電力変換装置及び半導体モジュールの製造方法
KR20230123346A (ko) * 2022-02-16 2023-08-23 삼성전자주식회사 집적 회로
DE102022211040A1 (de) 2022-10-19 2024-04-25 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleitermodul

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001250890A (ja) 2000-03-07 2001-09-14 Fuji Electric Co Ltd 半導体装置及びその製造方法
US20020001166A1 (en) 1998-08-04 2002-01-03 Kenji Kijima Ceramic capacitor mounting structure
DE10345247A1 (de) 2003-09-29 2005-05-19 Infineon Technologies Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2010213447A (ja) 2009-03-10 2010-09-24 Nissan Motor Co Ltd 機電一体型駆動装置
WO2012056873A1 (ja) 2010-10-28 2012-05-03 株式会社日立製作所 バスバ間内蔵コンデンサ、電力機器及び電力変換装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299584A (ja) 1992-02-21 1993-11-12 Toshiba Corp 薄膜容量素子及び半導体記憶装置
JPH06140446A (ja) 1992-07-21 1994-05-20 Hitachi Ltd 半導体装置及びそれを用いた電子装置
JP3340003B2 (ja) * 1995-11-20 2002-10-28 京セラ株式会社 多層配線基板及び半導体素子収納用パッケージ
JPH10174424A (ja) 1996-10-07 1998-06-26 Toshiba Corp 電力変換装置
JP2000092847A (ja) 1998-09-14 2000-03-31 Denso Corp コンデンサ付き半導体モジュール装置
JP4044265B2 (ja) 2000-05-16 2008-02-06 三菱電機株式会社 パワーモジュール
US6558169B2 (en) * 2001-03-29 2003-05-06 Intel Corporation Shunt power connection for an integrated circuit package
JP4060657B2 (ja) * 2002-07-18 2008-03-12 Ｎｅｃトーキン株式会社 固体電解コンデンサとその製造方法
JP2004350400A (ja) 2003-05-22 2004-12-09 Hitachi Ltd 電力変換装置
JP2005341643A (ja) * 2004-05-24 2005-12-08 Toshiba Corp 電力変換器のブスバー装置
JP2006174566A (ja) * 2004-12-14 2006-06-29 Toyota Motor Corp 電流制御素子、昇圧装置およびインバータ装置
JP2006222347A (ja) * 2005-02-14 2006-08-24 Toyota Motor Corp 半導体モジュールと半導体モジュールの製造方法
JP4661645B2 (ja) * 2005-03-23 2011-03-30 トヨタ自動車株式会社 パワー半導体モジュール
KR100876247B1 (ko) * 2006-10-19 2008-12-26 삼성에스디아이 주식회사 이차전지 및 그 제조방법
JP5061717B2 (ja) 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
JP5151338B2 (ja) * 2007-09-14 2013-02-27 株式会社Ｉｈｉ コンデンサ内蔵絶縁型半導体パワーモジュール
US8053865B2 (en) * 2008-03-10 2011-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. MOM capacitors integrated with air-gaps
JP5169353B2 (ja) * 2008-03-18 2013-03-27 三菱電機株式会社 パワーモジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020001166A1 (en) 1998-08-04 2002-01-03 Kenji Kijima Ceramic capacitor mounting structure
JP2001250890A (ja) 2000-03-07 2001-09-14 Fuji Electric Co Ltd 半導体装置及びその製造方法
DE10345247A1 (de) 2003-09-29 2005-05-19 Infineon Technologies Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2010213447A (ja) 2009-03-10 2010-09-24 Nissan Motor Co Ltd 機電一体型駆動装置
WO2012056873A1 (ja) 2010-10-28 2012-05-03 株式会社日立製作所 バスバ間内蔵コンデンサ、電力機器及び電力変換装置
US20130279227A1 (en) 2010-10-28 2013-10-24 Hitachi ,Ltd. Capacitor embedded between busbars, electric power device and electric power conversion device

Also Published As

Publication number Publication date
CN103311191B (zh) 2016-08-10
US20130234291A1 (en) 2013-09-12
CN103311191A (zh) 2013-09-18
US8754462B2 (en) 2014-06-17
JP5754398B2 (ja) 2015-07-29
JP2013187464A (ja) 2013-09-19
DE102012224354A1 (de) 2013-09-12

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