DE102009060677A1 - Fertigungsverfahren für Photomaskenrohling und Fertigungsverfahren für Photomaske - Google Patents

Fertigungsverfahren für Photomaskenrohling und Fertigungsverfahren für Photomaske Download PDF

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Publication number
DE102009060677A1
DE102009060677A1 DE102009060677A DE102009060677A DE102009060677A1 DE 102009060677 A1 DE102009060677 A1 DE 102009060677A1 DE 102009060677 A DE102009060677 A DE 102009060677A DE 102009060677 A DE102009060677 A DE 102009060677A DE 102009060677 A1 DE102009060677 A1 DE 102009060677A1
Authority
DE
Germany
Prior art keywords
thin film
film
light
photomask
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009060677A
Other languages
German (de)
English (en)
Inventor
Toshiyuki Suzuki
Masahiro Hashimoto
Kazunori Ono
Ryo Ohkubo
Kazuya Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE102009060677A1 publication Critical patent/DE102009060677A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE102009060677A 2008-12-29 2009-12-28 Fertigungsverfahren für Photomaskenrohling und Fertigungsverfahren für Photomaske Withdrawn DE102009060677A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-335663 2008-12-29
JP2008335663A JP5497288B2 (ja) 2008-12-29 2008-12-29 フォトマスクブランクの製造方法及びフォトマスクの製造方法

Publications (1)

Publication Number Publication Date
DE102009060677A1 true DE102009060677A1 (de) 2010-08-19

Family

ID=42285359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009060677A Withdrawn DE102009060677A1 (de) 2008-12-29 2009-12-28 Fertigungsverfahren für Photomaskenrohling und Fertigungsverfahren für Photomaske

Country Status (5)

Country Link
US (1) US8221941B2 (https=)
JP (1) JP5497288B2 (https=)
KR (1) KR101255414B1 (https=)
DE (1) DE102009060677A1 (https=)
TW (1) TWI463247B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2594994A2 (en) 2011-11-21 2013-05-22 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method, photomask, and photomask blank
US8475978B2 (en) 2010-09-10 2013-07-02 Shin-Etsu Chemical Co., Ltd. Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film
US8753786B2 (en) 2011-11-21 2014-06-17 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method, halftone phase shift mask, and halftone phase shift mask blank

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JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
JP2010217514A (ja) * 2009-03-17 2010-09-30 Toppan Printing Co Ltd フォトマスクの製造方法
JP5409298B2 (ja) * 2009-11-26 2014-02-05 Ｈｏｙａ株式会社 マスクブランク及び転写用マスク並びにそれらの製造方法
TWI588593B (zh) * 2010-04-09 2017-06-21 Ｈｏｙａ股份有限公司 Phase shift mask substrate and method of making same, and phase shift mask
JP5682493B2 (ja) 2010-08-04 2015-03-11 信越化学工業株式会社 バイナリーフォトマスクブランク及びバイナリーフォトマスクの製造方法
JP5154626B2 (ja) * 2010-09-30 2013-02-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5653888B2 (ja) * 2010-12-17 2015-01-14 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP6173733B2 (ja) * 2012-03-23 2017-08-02 Hoya株式会社 マスクブランク、転写用マスク及びこれらの製造方法
JP5596111B2 (ja) * 2012-12-05 2014-09-24 Ｈｏｙａ株式会社 半導体デバイスの製造方法
JP5868905B2 (ja) 2013-07-03 2016-02-24 信越化学工業株式会社 フォトマスクブランクの製造方法およびフォトマスクブランク
JP6234898B2 (ja) * 2013-09-25 2017-11-22 信越化学工業株式会社 フォトマスクブランクの製造方法
JP5775631B2 (ja) * 2014-08-06 2015-09-09 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
WO2016152212A1 (ja) * 2015-03-24 2016-09-29 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6418035B2 (ja) * 2015-03-31 2018-11-07 信越化学工業株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP5962811B2 (ja) * 2015-04-22 2016-08-03 信越化学工業株式会社 光パターン照射方法
JP2016095533A (ja) * 2016-01-25 2016-05-26 信越化学工業株式会社 光パターン照射方法
KR102313892B1 (ko) 2016-03-29 2021-10-15 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6683578B2 (ja) * 2016-09-23 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
US10983430B2 (en) * 2018-02-22 2021-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Mask assembly and haze acceleration method
TWI847949B (zh) * 2018-11-30 2024-07-01 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7059234B2 (ja) * 2018-11-30 2022-04-25 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法及び表示装置の製造方法
TWI782237B (zh) * 2018-11-30 2022-11-01 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7413092B2 (ja) * 2020-03-12 2024-01-15 Hoya株式会社 フォトマスクブランク、フォトマスクブランクの製造方法、フォトマスクの製造方法及び表示装置の製造方法
JP7801845B2 (ja) * 2020-09-08 2026-01-19 テクセンドフォトマスク株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002258455A (ja) 2001-03-01 2002-09-11 Shin Etsu Chem Co Ltd 位相シフトマスクブランク及び位相シフトマスク

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JP2924791B2 (ja) * 1996-06-18 1999-07-26 日本電気株式会社 フォトマスク及びフォトマスクの製造方法
JP2001033939A (ja) * 1999-05-19 2001-02-09 Semiconductor Leading Edge Technologies Inc マスクブランク若しくはマスクとそれらの製造方法およびそのマスクを用いた露光方法
JP3722029B2 (ja) * 2000-09-12 2005-11-30 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
JP2002229183A (ja) 2000-12-01 2002-08-14 Hoya Corp リソグラフィーマスクブランク及びその製造方法
JP4258631B2 (ja) 2002-12-03 2009-04-30 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
KR100805973B1 (ko) * 2002-12-26 2008-02-25 호야 가부시키가이샤 리소그래피 마스크 블랭크
WO2004059384A1 (ja) 2002-12-26 2004-07-15 Hoya Corporation リソグラフィーマスクブランク
JP4026000B2 (ja) 2003-01-22 2007-12-26 信越化学工業株式会社 フォトマスクブランクの製造方法、反りの低減方法及び膜の耐薬品性の向上方法、並びにフォトマスク
JP2005241693A (ja) * 2004-02-24 2005-09-08 Shin Etsu Chem Co Ltd ハーフトーン型位相シフトマスクブランク及びその製造方法並びにハーフトーン型位相シフトマスク及びその製造方法
JP4650608B2 (ja) * 2004-05-18 2011-03-16 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4076989B2 (ja) 2004-10-15 2008-04-16 Ｈｏｙａ株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP4578960B2 (ja) 2004-12-27 2010-11-10 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスクの製造方法
JP2006317665A (ja) 2005-05-12 2006-11-24 Shin Etsu Chem Co Ltd 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크
JP4958149B2 (ja) * 2006-11-01 2012-06-20 Ｈｏｙａ株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法

Patent Citations (2)

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JP2002156742A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd 位相シフトマスクブランク、位相シフトマスク及びこれらの製造方法
JP2002258455A (ja) 2001-03-01 2002-09-11 Shin Etsu Chem Co Ltd 位相シフトマスクブランク及び位相シフトマスク

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8475978B2 (en) 2010-09-10 2013-07-02 Shin-Etsu Chemical Co., Ltd. Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film
EP3736631A1 (en) 2010-09-10 2020-11-11 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and light pattern exposure method
EP2594994A2 (en) 2011-11-21 2013-05-22 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method, photomask, and photomask blank
US8753787B2 (en) 2011-11-21 2014-06-17 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method, photomask, and photomask blank
US8753786B2 (en) 2011-11-21 2014-06-17 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method, halftone phase shift mask, and halftone phase shift mask blank
EP3048484A1 (en) 2011-11-21 2016-07-27 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method
EP3051347A2 (en) 2011-11-21 2016-08-03 Shin-Etsu Chemical Co., Ltd. Light pattern exposure method

Also Published As

Publication number Publication date
US20100167185A1 (en) 2010-07-01
US8221941B2 (en) 2012-07-17
JP5497288B2 (ja) 2014-05-21
TW201030455A (en) 2010-08-16
KR101255414B1 (ko) 2013-04-17
TWI463247B (zh) 2014-12-01
KR20100080413A (ko) 2010-07-08
JP2010156880A (ja) 2010-07-15

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