DE102009015589A1 - Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske - Google Patents
Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske Download PDFInfo
- Publication number
- DE102009015589A1 DE102009015589A1 DE102009015589A DE102009015589A DE102009015589A1 DE 102009015589 A1 DE102009015589 A1 DE 102009015589A1 DE 102009015589 A DE102009015589 A DE 102009015589A DE 102009015589 A DE102009015589 A DE 102009015589A DE 102009015589 A1 DE102009015589 A1 DE 102009015589A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- mask
- phase shift
- etching
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000005530 etching Methods 0.000 claims abstract description 125
- 238000000034 method Methods 0.000 claims abstract description 54
- 230000008569 process Effects 0.000 claims abstract description 41
- 238000001312 dry etching Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 3
- 239000011147 inorganic material Substances 0.000 claims abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 32
- 239000011651 chromium Substances 0.000 claims description 30
- 229910052804 chromium Inorganic materials 0.000 claims description 23
- 239000000460 chlorine Substances 0.000 claims description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 26
- 239000010410 layer Substances 0.000 description 296
- 239000007789 gas Substances 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 229910021350 transition metal silicide Inorganic materials 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical class [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 9
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 229910003470 tongbaite Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000005546 reactive sputtering Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910008807 WSiN Inorganic materials 0.000 description 2
- 229910008828 WSiO Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 lanthal Chemical compound 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 241000251131 Sphyrna Species 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- FXNGWBDIVIGISM-UHFFFAOYSA-N methylidynechromium Chemical compound [Cr]#[C] FXNGWBDIVIGISM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-095924 | 2008-04-02 | ||
| JP2008095924 | 2008-04-02 | ||
| JP2009034480A JP5323526B2 (ja) | 2008-04-02 | 2009-02-17 | 位相シフトマスクブランク及び位相シフトマスクの製造方法 |
| JP2009-034480 | 2009-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102009015589A1 true DE102009015589A1 (de) | 2009-10-22 |
Family
ID=41078854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102009015589A Withdrawn DE102009015589A1 (de) | 2008-04-02 | 2009-03-30 | Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8043771B2 (enExample) |
| JP (1) | JP5323526B2 (enExample) |
| KR (1) | KR101575697B1 (enExample) |
| DE (1) | DE102009015589A1 (enExample) |
| TW (1) | TWI453529B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220075258A1 (en) * | 2018-12-26 | 2022-03-10 | S&S Tech Co., Ltd. | Blankmask and photomask |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI457697B (zh) * | 2009-01-15 | 2014-10-21 | Shinetsu Chemical Co | 光罩製造方法，空白光罩與乾式蝕刻法 |
| KR101663173B1 (ko) * | 2009-10-09 | 2016-10-07 | 삼성전자주식회사 | 알카리 세정에 내성을 갖는 위상 반전 마스크 및 위상 반전 마스크의 제조 방법 |
| JP2011123426A (ja) * | 2009-12-14 | 2011-06-23 | Toppan Printing Co Ltd | フォトマスクブランク及びフォトマスクの製造方法 |
| JP5704754B2 (ja) | 2010-01-16 | 2015-04-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
| JP2011215197A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | フォトマスク及びその製造方法 |
| KR101151685B1 (ko) * | 2011-04-22 | 2012-07-20 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 포토마스크 |
| SG185228A1 (en) * | 2011-04-25 | 2012-11-29 | Ultratech Inc | Phase-shift mask with assist phase regions |
| JP5541266B2 (ja) | 2011-11-18 | 2014-07-09 | 信越化学工業株式会社 | パターン形成膜のエッチング条件の評価方法 |
| JP5541265B2 (ja) * | 2011-11-18 | 2014-07-09 | 信越化学工業株式会社 | エッチングマスク膜の評価方法 |
| US8715890B2 (en) | 2012-01-31 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor mask blanks with a compatible stop layer |
| KR101823276B1 (ko) * | 2013-09-24 | 2018-01-29 | 호야 가부시키가이샤 | 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| JP6364813B2 (ja) * | 2014-02-27 | 2018-08-01 | 大日本印刷株式会社 | フォトマスクの製造方法 |
| WO2016147518A1 (ja) * | 2015-03-19 | 2016-09-22 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法 |
| JP6780550B2 (ja) * | 2017-03-10 | 2020-11-04 | 信越化学工業株式会社 | フォトマスクブランク |
| JP6753375B2 (ja) * | 2017-07-28 | 2020-09-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
| US10739671B2 (en) | 2017-11-10 | 2020-08-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing phase shift photo masks |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1069055A (ja) | 1996-08-28 | 1998-03-10 | Sharp Corp | フォトマスクの製造方法 |
| JP2003322947A (ja) | 2002-04-26 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| WO2004090635A1 (ja) | 2003-04-09 | 2004-10-21 | Hoya Corporation | フォトマスクの製造方法及びフォトマスクブランク |
| US7011910B2 (en) | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| JP2008095924A (ja) | 2006-10-16 | 2008-04-24 | Denso Corp | シール装置 |
| JP2009034480A (ja) | 2007-07-31 | 2009-02-19 | Topcon Corp | 眼科情報処理装置及び眼科検査装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0749558A (ja) * | 1993-08-05 | 1995-02-21 | Sony Corp | 位相シフトマスクの作製方法 |
| JP2002251000A (ja) | 2001-02-26 | 2002-09-06 | Semiconductor Leading Edge Technologies Inc | 位相シフトマスクの製造方法、位相シフトマスク、位相シフトマスクブランクス及び半導体装置の製造方法 |
| US6924070B2 (en) * | 2003-03-19 | 2005-08-02 | Intel Corporation | Composite patterning integration |
| JP4413828B2 (ja) * | 2004-10-22 | 2010-02-10 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| US8293430B2 (en) * | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
| JP4509050B2 (ja) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
| JP2009063638A (ja) * | 2007-09-04 | 2009-03-26 | Fujitsu Microelectronics Ltd | フォトマスクの製造方法及び半導体装置の製造方法 |
-
2009
- 2009-02-17 JP JP2009034480A patent/JP5323526B2/ja active Active
- 2009-03-27 TW TW098110215A patent/TWI453529B/zh active
- 2009-03-30 DE DE102009015589A patent/DE102009015589A1/de not_active Withdrawn
- 2009-04-01 KR KR1020090028032A patent/KR101575697B1/ko active Active
- 2009-04-01 US US12/416,468 patent/US8043771B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1069055A (ja) | 1996-08-28 | 1998-03-10 | Sharp Corp | フォトマスクの製造方法 |
| US5851702A (en) | 1996-08-28 | 1998-12-22 | Sharp Kabushiki Kaisha | Method for producing a photomask |
| JP2003322947A (ja) | 2002-04-26 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| US7011910B2 (en) | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| WO2004090635A1 (ja) | 2003-04-09 | 2004-10-21 | Hoya Corporation | フォトマスクの製造方法及びフォトマスクブランク |
| US7314690B2 (en) | 2003-04-09 | 2008-01-01 | Hoya Corporation | Photomask producing method and photomask blank |
| JP2008095924A (ja) | 2006-10-16 | 2008-04-24 | Denso Corp | シール装置 |
| JP2009034480A (ja) | 2007-07-31 | 2009-02-19 | Topcon Corp | 眼科情報処理装置及び眼科検査装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220075258A1 (en) * | 2018-12-26 | 2022-03-10 | S&S Tech Co., Ltd. | Blankmask and photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090253054A1 (en) | 2009-10-08 |
| KR20090105850A (ko) | 2009-10-07 |
| US8043771B2 (en) | 2011-10-25 |
| JP2009265620A (ja) | 2009-11-12 |
| TW201003296A (en) | 2010-01-16 |
| TWI453529B (zh) | 2014-09-21 |
| JP5323526B2 (ja) | 2013-10-23 |
| KR101575697B1 (ko) | 2015-12-08 |
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