TWI453529B - 相偏移光罩基底及相偏移光罩之製造方法 - Google Patents
相偏移光罩基底及相偏移光罩之製造方法 Download PDFInfo
- Publication number
- TWI453529B TWI453529B TW098110215A TW98110215A TWI453529B TW I453529 B TWI453529 B TW I453529B TW 098110215 A TW098110215 A TW 098110215A TW 98110215 A TW98110215 A TW 98110215A TW I453529 B TWI453529 B TW I453529B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- mask
- etching
- phase shift
- pattern
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title claims description 100
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010408 film Substances 0.000 claims description 359
- 238000005530 etching Methods 0.000 claims description 181
- 239000000758 substrate Substances 0.000 claims description 63
- 239000007789 gas Substances 0.000 claims description 36
- 229910052707 ruthenium Inorganic materials 0.000 claims description 35
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 30
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 22
- 239000011651 chromium Substances 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 20
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000000460 chlorine Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000013039 cover film Substances 0.000 claims description 3
- 229910001507 metal halide Inorganic materials 0.000 claims description 3
- 150000005309 metal halides Chemical class 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 2
- 230000000694 effects Effects 0.000 description 25
- 238000012545 processing Methods 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 239000010410 layer Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 229910052723 transition metal Inorganic materials 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 10
- 238000013461 design Methods 0.000 description 10
- -1 transition metal ruthenium oxide Chemical class 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 229910003470 tongbaite Inorganic materials 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 150000003624 transition metals Chemical class 0.000 description 8
- 238000005546 reactive sputtering Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- 229910008807 WSiN Inorganic materials 0.000 description 2
- 229910008828 WSiO Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- FXNGWBDIVIGISM-UHFFFAOYSA-N methylidynechromium Chemical compound [Cr]#[C] FXNGWBDIVIGISM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008095924 | 2008-04-02 | ||
| JP2009034480A JP5323526B2 (ja) | 2008-04-02 | 2009-02-17 | 位相シフトマスクブランク及び位相シフトマスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201003296A TW201003296A (en) | 2010-01-16 |
| TWI453529B true TWI453529B (zh) | 2014-09-21 |
Family
ID=41078854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098110215A TWI453529B (zh) | 2008-04-02 | 2009-03-27 | 相偏移光罩基底及相偏移光罩之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8043771B2 (enExample) |
| JP (1) | JP5323526B2 (enExample) |
| KR (1) | KR101575697B1 (enExample) |
| DE (1) | DE102009015589A1 (enExample) |
| TW (1) | TWI453529B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2209048B1 (en) * | 2009-01-15 | 2013-09-04 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a photomask, and dry etching method |
| KR101663173B1 (ko) * | 2009-10-09 | 2016-10-07 | 삼성전자주식회사 | 알카리 세정에 내성을 갖는 위상 반전 마스크 및 위상 반전 마스크의 제조 방법 |
| JP2011123426A (ja) | 2009-12-14 | 2011-06-23 | Toppan Printing Co Ltd | フォトマスクブランク及びフォトマスクの製造方法 |
| JP5704754B2 (ja) | 2010-01-16 | 2015-04-22 | Hoya株式会社 | マスクブランク及び転写用マスクの製造方法 |
| JP2011215197A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | フォトマスク及びその製造方法 |
| KR101151685B1 (ko) * | 2011-04-22 | 2012-07-20 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 포토마스크 |
| SG185228A1 (en) * | 2011-04-25 | 2012-11-29 | Ultratech Inc | Phase-shift mask with assist phase regions |
| JP5541265B2 (ja) * | 2011-11-18 | 2014-07-09 | 信越化学工業株式会社 | エッチングマスク膜の評価方法 |
| JP5541266B2 (ja) | 2011-11-18 | 2014-07-09 | 信越化学工業株式会社 | パターン形成膜のエッチング条件の評価方法 |
| US8715890B2 (en) * | 2012-01-31 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor mask blanks with a compatible stop layer |
| JP5837257B2 (ja) * | 2013-09-24 | 2015-12-24 | Hoya株式会社 | マスクブランク、転写用マスクおよび転写用マスクの製造方法 |
| JP6364813B2 (ja) * | 2014-02-27 | 2018-08-01 | 大日本印刷株式会社 | フォトマスクの製造方法 |
| US10571797B2 (en) * | 2015-03-19 | 2020-02-25 | Hoya Corporation | Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP6780550B2 (ja) * | 2017-03-10 | 2020-11-04 | 信越化学工業株式会社 | フォトマスクブランク |
| JP6753375B2 (ja) * | 2017-07-28 | 2020-09-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法 |
| US10739671B2 (en) | 2017-11-10 | 2020-08-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing phase shift photo masks |
| US20220075258A1 (en) * | 2018-12-26 | 2022-03-10 | S&S Tech Co., Ltd. | Blankmask and photomask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI259329B (en) * | 2003-04-09 | 2006-08-01 | Hoya Corp | Method of manufacturing a photomask, and photomask blank |
| JP2006209126A (ja) * | 2005-01-27 | 2006-08-10 | Applied Materials Inc | フォトマスク製作に適したモリブデン層をエッチングするための方法 |
| US20070212618A1 (en) * | 2006-03-10 | 2007-09-13 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0749558A (ja) * | 1993-08-05 | 1995-02-21 | Sony Corp | 位相シフトマスクの作製方法 |
| JP3539652B2 (ja) | 1996-08-28 | 2004-07-07 | シャープ株式会社 | フォトマスクの製造方法 |
| JP2002251000A (ja) | 2001-02-26 | 2002-09-06 | Semiconductor Leading Edge Technologies Inc | 位相シフトマスクの製造方法、位相シフトマスク、位相シフトマスクブランクス及び半導体装置の製造方法 |
| US7011910B2 (en) | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
| JP2003322947A (ja) * | 2002-04-26 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| US6924070B2 (en) * | 2003-03-19 | 2005-08-02 | Intel Corporation | Composite patterning integration |
| JP4413828B2 (ja) * | 2004-10-22 | 2010-02-10 | 信越化学工業株式会社 | フォトマスクブランクおよびフォトマスクならびにこれらの製造方法 |
| JP2008095924A (ja) | 2006-10-16 | 2008-04-24 | Denso Corp | シール装置 |
| US7641339B2 (en) | 2007-07-31 | 2010-01-05 | Kabushiki Kaisha Topcon | Ophthalmologic information processing apparatus and ophthalmologic examination apparatus |
| JP2009063638A (ja) * | 2007-09-04 | 2009-03-26 | Fujitsu Microelectronics Ltd | フォトマスクの製造方法及び半導体装置の製造方法 |
-
2009
- 2009-02-17 JP JP2009034480A patent/JP5323526B2/ja active Active
- 2009-03-27 TW TW098110215A patent/TWI453529B/zh active
- 2009-03-30 DE DE102009015589A patent/DE102009015589A1/de not_active Withdrawn
- 2009-04-01 US US12/416,468 patent/US8043771B2/en active Active
- 2009-04-01 KR KR1020090028032A patent/KR101575697B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI259329B (en) * | 2003-04-09 | 2006-08-01 | Hoya Corp | Method of manufacturing a photomask, and photomask blank |
| JP2006209126A (ja) * | 2005-01-27 | 2006-08-10 | Applied Materials Inc | フォトマスク製作に適したモリブデン層をエッチングするための方法 |
| US20070212618A1 (en) * | 2006-03-10 | 2007-09-13 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| US8043771B2 (en) | 2011-10-25 |
| DE102009015589A1 (de) | 2009-10-22 |
| KR101575697B1 (ko) | 2015-12-08 |
| KR20090105850A (ko) | 2009-10-07 |
| JP5323526B2 (ja) | 2013-10-23 |
| JP2009265620A (ja) | 2009-11-12 |
| US20090253054A1 (en) | 2009-10-08 |
| TW201003296A (en) | 2010-01-16 |
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