CN213583700U - 半导体器件 - Google Patents

半导体器件 Download PDF

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CN213583700U
CN213583700U CN202021698147.XU CN202021698147U CN213583700U CN 213583700 U CN213583700 U CN 213583700U CN 202021698147 U CN202021698147 U CN 202021698147U CN 213583700 U CN213583700 U CN 213583700U
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conductive
semiconductor
semiconductor die
semiconductor device
direct structuring
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F·G·齐格利奥利
A·平图斯
M·德赖
P·马格尼
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STMicroelectronics SRL
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Abstract

本公开的各实施例涉及半导体器件。一种半导体器件，包括：设置有经激光束加工的导电结构的至少一个半导体裸片；和成型到至少一个半导体裸片上的封装成型结构，封装成型结构将至少一个半导体裸片和其上提供的导电结构的至少一部分进行包封。根据本公开的实施例，降低了半导体器件的成本并且提供了良好的热性能。

Description

半导体器件
技术领域
本公开涉及半导体器件。
背景技术
目前有各种技术可用于制造半导体器件，诸如，例如，QFN(四方扁平无引线)半导体器件。
在该技术领域所需的特征可能包括：
降低的装配成本；
用定制衬底代替引线框；
衬底制造中的高灵活性；
针对多个裸片的模块化配置；和/或
可能不需要引线接合的能力。
实用新型内容
本公开至少解决了上述问题中的一些问题。
根据本公开的一个方面，提供了一种半导体器件，包括：设置有经激光束加工的导电结构的至少一个半导体裸片；和成型到至少一个半导体裸片上的封装成型结构，封装成型结构将至少一个半导体裸片和其上提供的导电结构的至少一部分进行包封。
在一些实施例中，导电结构中的至少一些导电结构延伸通过激光直接成型结构。
在一些实施例中，对激光直接成型结构进行激光束加工包括在激光直接成型结构中形成腔，并且导电结构包括激光直接成型材料中的腔的表面上的导电层。
在一些实施例中，半导体器件包括：成型到至少一个半导体裸片上的附加的激光直接成型结构的一层；和在附加的激光直接成型结构的一层上的第二导电结构。
在一些实施例中，第二导电结构中的至少一些导电结构延伸通过附加的激光直接成型结构的一层。
在一些实施例中，导电结构通过至少一个半导体裸片与第二导电结构分隔开。
根据本公开的实施例，降低了半导体器件的成本并且提供了良好的热性能。
附图说明
现在将通过示例参考附图描述一个或多个实施例，其中：
图1A至图1I是根据实施例的方法中的可能的动作的示例；
图2是根据实施例的半导体器件的截面视图；
图3是根据实施例的半导体器件的截面视图；
图4是实施例的半导体器件示例的某些元件的平面视图；
图5是图4的、由箭头V指示的部分的详细视图；和
图6和图7基本上对应于图5的视图，是实施例中某些可能的动作的示例的示例性视图。
要理解的是，为了清楚和便于表示，各个附图可能不是按相同的比例绘制的。
具体实施方式
本公开提供了各种实施例，这些实施例有助于按照上文讨论的思路提供进一步的改进。
根据一个或多个实施例，可以通过具有下文的权利要求中提出的特征的方法实现各种优点。
一个或多个实施例可以涉及对应的半导体器件(例如，集成电路)。
一个或多个实施例可以提供以下优点中的一个或多个：
低成本的结构；
避免引线接合的可能性；
良好的热性能；
使用塑料引线框的可能性；和/或
有助于焊点检查。
在一个或多个实施例中，本公开提供了一种方法，包括：将至少一个半导体裸片布置在支撑表面上；将激光直接成型材料成型到其上布置有至少一个半导体裸片的支撑表面上；对成型到其上布置有至少一个半导体裸片的支撑表面上的激光直接成型材料进行激光束加工，针对布置在支撑表面上的至少一个半导体裸片提供导电结构；以及将设置有导电结构的至少一个半导体裸片与支撑表面分离。
在一个或多个实施例中，本公开提供了一种半导体器件，包括设置有根据本文所述的方法形成的导电结构的至少一个半导体裸片。该半导体器件进一步包括成型到至少一个半导体裸片的封装成型材料，该封装成型材料将至少一个半导体裸片和其上设置的导电结构的至少一部分进行包封。
在一个或多个实施例中，本公开提供了一种方法，包括：在衬底的表面上形成激光直接成型材料的第一层，多个半导体裸片位于衬底的表面上；通过对激光直接成型材料的第一层进行激光束加工，来在激光直接成型材料的第一层上形成第一导电结构，第一导电结构电耦合到多个半导体裸片；以及将多个半导体裸片和第一导电结构与衬底的表面分离。
在下文的说明书中，说明了一个或多个具体的细节，旨在提供对本说明书的实施例的示例的深入理解。实施例可以在没有一个或多个具体细节的情况下获得，或者通过其他方法、部件、材料等获得。在其他情况下，没有详细说明和描述已知的结构、材料或操作，使得不会模糊实施例的某些方面。
在本说明书的框架中对“一实施例”或“一个实施例”的引用旨在指示与所描述的实施例相关的特定的配置、结构或特征包括在至少一个实施例中。因此，在可能在本说明书的一个或多个点出现的诸如“在一项实施例中”或“在一个实施例中”的短语不一定是指一个和同一个实施例。此外，特定的构造、结构或特征可以在一个或多个实施例中以任何适当的方式组合。
本文使用的引用仅是为了方便，并且因此不定义保护的范围或实施例的范围。
激光直接成型(LDS)是如今广泛应用于工业和消费电子市场的各个部门的基于激光的机械技术，例如，高性能天线集成，其中天线设计可以直接在成型塑料部件上形成。
在一个示例性过程中，成型部件可以由市面上可获得的树脂生产，其中包括适用于LDS工艺的添加物；目前可用于该目的的树脂的范围广泛，如PC、PC/ABS、ABS、LCP等。
在LDS中，激光束可以用于将所需的导电图案传输到塑料成型上，该塑料成型随后可以金属化(例如经由铜或其他金属的化学镀层) 以最终确定所需的导电图案。
本文举例说明的一个或多个实施例是基于这样的认识，即LDS 有助于在成型化合物中提供导电结构(诸如通孔和线路)，而无需进一步的制造步骤并且在可获得的形状上具有高度灵活性。
一个或多个实施例可以应用于各种类型的半导体器件诸如(作为非限制性示例)目前被称为QFN的半导体器件，QFN是四方扁平无引线的缩写。
一个或多个实施例可以有助于提供不包括引线框的半导体器件。术语“引线框”(或“引线框架”)目前用于(例如参见美国专利商标局的USPC综合词汇表)指示为集成电路片或芯片以及电引线提供支撑的金属框架，以将片或芯片中集成电路的互连到其他电气部件或触点。
一个或多个实施例可以基于这样的认识，即EMC(环氧树脂成型化合物)包封的半导体封装器件上集成的电子功能可以通过提高封装级别1的密度来增加价值：例如参见C.Fechtelpeter等人于2016年9月28日至29日在德国维尔茨堡在2016年第12届国际成型互连器件大会(2016年中)的论文集的第88至93页(ISBN 978-1-5090-5429-9)提出的“Reliability in MID–barriers,potentials, field of action(中间屏障、电位、行动域的可靠性)”。
此外已知LDS-MID技术可以有助于将电路直接集成到芯片封装外壳。例如，这可以包括可能与封装叠加(PoP)解决方案组合的 AoP(封装天线)解决方案，从而增加功能密度(尺寸和成本降低)。
这种解决方案可以利用最先进的包覆成型成型材料，以用于保护 IC封装免受环境压力的影响，同时促进(非常)高的选择性金属化和粘合强度(>20N/mm2)、高耐热性和低CTE(热膨胀)以及良好的 RF(射频)特性和高频性能。
这种解决方案还可以利用压缩成型和转移成型技术(transfer moldingtechnique)的发展，以及借助LDS技术提供微通孔(通过模具通孔)的可能性。
本文举例说明的一个或多个实施例可以涉及提供临时(牺牲)支撑带(例如，包括当前称为Kapton的聚酰亚胺带材料)，其上可附接一个或多个半导体芯片或裸片，然后利用LDS化合物成型。
附接在带上的芯片可以涉及本领域的技术人员已知的任何技术。
此外，LDS化合物可以包括广泛范围的LDS材料中的任何一种，诸如，例如，树脂(诸如聚合树脂，如目前市场上可用的PC、PC/ABS、 ABS、LCP)。
在使LDS化合物成型后，可以根据需要(可能重复地)执行迹线和通孔的激光成型，以创建包括多个(N+1)层的(甚至相当复杂) 导电结构的布线。
在一个或多个实施例中，此后牺牲带可以被移除(即一个或多个裸片可以与带分离)，其中有可能在由此提供的结构的后侧上形成用于焊接的焊盘。
一个或多个实施例可以包括图1A至图1I中举例说明的动作，其中如下文上述的最终分割的多个半导体器件的同步制造被假设为按照本领域的其他常规方式进行。
图1A是提供如上上述的(牺牲)支撑带10的动作的示例，其中一个或多个半导体芯片或裸片12可以以本领域的技术人员已知的方式附接在其上。
图1B是将LDS材料成型到其上布置有裸片12的带10上的动作的示例；如上上述，一系列市面上可获得的树脂包括适用于LDS工艺(目前各个供应商可获得的PC、PC/ABS、ABS、LCP)的添加物，可以用于该目的。
图1C是对LDS材料14进行LDS加工(激光束激活L加上可能的金属化(诸如电镀)以按照本领域的常规方式促进或增加导电性) 以提供导电结构16的第一层的动作的示例。
图1D是在图1C产生的结构上成型另一LDS材料18(与14相同或不同)的动作的示例。
图1E是对另一LDS材料18进行LDS加工(激光束激活L加上可能的金属化(诸如电镀)以按照本领域的常规方式促进或增加导电性)以提供导电结构20的另一层的动作的示例。如本文举例说明，这种LDS加工可以包括延伸通过层14和/或18的厚度的导电通孔20’的可能结构。
图1F是移除牺牲支撑板10，从而将图1E产生的结构与带10分离的动作的示例，其中导电结构22的可能形成(生长)在结构的“后”侧。
图1G是将另一LDS材料24(与14和18相同或不同)成型到图 1F的结构的后侧的(可选择的)动作的示例。
图1H是对LDS材料24进行LDS加工(激光束激活L加上可能的金属化(诸如电镀)以按照本领域的常规方式促进或增加导电性) 以在图1F的结构的后侧提供导电结构26的一层的(可选择的)动作的示例。如本文举例说明，这种LDS加工可以包括延伸通过芯片或裸片12的层24的厚度的导电通孔26’的可能结构。
图1I是通过喷墨印刷、片材成型或其他已知技术封装该结构的前(上)和/或底(后)表面的动作的示例。
本文举例说明的一个或多个实施例有助于提供使用LDS材料的导电结构(例如参见16、20、20’、26、26’)的复杂3D布线。这有助于避免(或者至少减少)电气布线提供不同厚度的不同金属镀覆迹线层的可能性。
在一些实施例中，导电结构(例如参见16、20、20’、26、26’) 的形成可以包括金属化(例如，电镀等)的附加步骤，以在已经被加工为形成导电结构图案(例如参见16、20、20’、26、26’)的LDS 材料的区域上或区域中形成导电材料。金属化可以促进或提供导电结构适当的导电性，例如，通过增加用于本文提供的半导体器件所需的导电结构的导电性。
在一个或多个实施例中，可以避免使用(金属)引线框。
在一个或多个实施例中，可以在层之间提供EMI(电磁干扰)屏蔽。
图2和图3是可以如上文举例说明生产的半导体器件的截面视图的示例。图3是包括图1G和图1H中举例说明的可选择的动作的实施例的示例。
在图2和图3中的部件或元件与图1A至图1I中已经讨论的部件或元件由相同的的附图标记指示。为了简洁起见将不再重复详细的描述。
在图3中举例说明的布置中，如在22处举例说明的半导体芯片或裸片12的后侧的金属生长可以考虑在半导体片或芯片12的后侧或底侧可能存在金属化以及稍后将要移除的专用布线。
如本领域的技术人员所知，半导体裸片(诸如12)在其底(后) 面可以设置有金属化(诸如几纳米的金)。这种金属化可以在裸片制造中产生，目的是一旦焊接到印刷电路板或PCB上就具有良好的电气性能，如果在金属化和相关联的引线框的任何点之间需要接地连接，那么就可能形成(厚)铜层；在该动作后，在封装分割期间，接地连接可以从引线框的剩余部分移除或断开。
图2和图3中举例说明的实施例可以包括在“第一”LDS层14 上提供的导电结构18的一层。一个或多个实施例可以涉及在器件的前侧或顶侧上提供的LDS材料的多个这种另外的层。这可能导致半导体芯片或裸片12的导电结构至少三层的堆叠布置。
图2和图3是提供通过(层14中)LDS材料的激光束加工获得的“半切”线的可能性的100处的示例。此外，此后可以淀积导电材料(例如通过已知的工艺(诸如电镀)应用的金属)，从而有助于焊料检查。
这些半切线(可润湿侧面)可通过激光蚀刻LDS材料14来创建。然后可以经由“分割”获得单个封装，该“分割”可以经由常规工具 (如锯条)实现。
如图5举例说明，这种可润湿侧面可以经由进入到LDS材料中的激光束的(强)激光穿透(例如，约100微米的蚀刻)而产生。
如图5举例说明，由此形成的凹坑可能具有在其之间延伸的(较) 轻的激光穿透的线104(例如，几微米的蚀刻)。
图6举例说明了上文中产生和讨论的半导体器件的“分割”的可能的结果。如上上述，分割可能涉及任何已知的分割方法(用箭头S 表示)，即图4中移除104处的电镀的可能性，如传统的分割方法所预期的那样，移除连接到引线框结构上的所谓的母线(bus bar)，以使引线框中的引线短路，例如，通过电解过程促进电镀生长。
图7是在单独的半导体器件的一侧分割的可能结果的示例。图7 还举例说明了在半切(可润湿侧面)100的表面导电材料的沉积(例如经由电镀的金属化)。
要理解的是，图3还可以被视为在半导体芯片或裸片12的后侧进行LDS处理的可能性的示例，其利用了由半导体芯片或裸片12后侧的层24的LDS工艺而产生的导电区域26、26’的导热性，以产生适用于用作散热器和/或促进散热的导热通孔和导热垫的合并布置。
本文举例说明的方法可以包括：
提供支撑表面(例如，诸如10的带)；
在上述支撑表面上布置至少一个半导体裸片(例如，LED 12)；
将激光直接成型材料(例如，14)成型到其上布置有至少一个半导体裸片的支撑表面上；
对(例如，L)成型到其上布置有至少一个半导体裸片的支撑表面上的激光直接成型材料进行激光束加工，针对布置在上述支撑表面上的至少一个半导体裸片提供导电结构(例如，16)；和
将设置有导电结构的上述至少一个半导体裸片与上述支撑表面分离。
本文举例说明的方法可以包括：
i)将另一激光直接成型材料(例如，18)成型到设置有上述导电结构的上述至少一个半导体裸片上；和
ii)对上述另一激光直接成型材料进行激光束加工，针对上述至少一个半导体裸片提供另一导电结构。
本文举例说明的方法可以包括重复上述动作i)和ii)，针对上述至少一个半导体裸片提供导电结构的多个层的堆叠布置。
本文举例说明的方法可以包括，在将设置有上述导电结构的上述至少一个半导体裸片与上述支撑表面(例如，10)分离后：
将附加的激光直接成型材料(24)成型到与上述导电结构相对的上述至少一个半导体裸片(12)上；和
对上述附加的激光直接成型材料进行激光束加工(例如，L)，针对与上述导电结构相对的上述至少一个半导体裸片提供附加的导电结构。
本文举例说明的方法可以包括，在将设置有上述导电结构的上述至少一个半导体裸片与上述支撑表面(例如，10)分离后，对与上述导电结构相对的上述激光直接成型材料进行激光束加工，从而在其中提供焊料可湿的结构(例如，100)。
在本文举例说明的方法中，上述激光束加工可以包括：
应用激光束能量以提供至少一个导电结构图案；和
将导电材料应用(例如，电镀)到上述至少一个导电结构图案上。
本文举例说明的半导体器件可以包括：
设置有根据本公开所述的方法形成的导电结构的至少一个半导体裸片；和
成型到上述至少一个半导体裸片的封装成型材料(例如，28 处举例说明的环氧树脂成型化合物)，以对上述至少一个半导体裸片和其上提供的至少部分导电结构进行包封。
本文举例说明的一个或多个实施例可以使其本身与在同一受让人的名义下于同日提交的意大利专利申请中所公开的用于制造半导体器件的解决方案相结合来实践。
在不损害基本原理的情况下，细节和实施例可以在不背离实施例的范围的情况下相对于仅通过示例描述的内容而变化，甚至是显著的变化。
可以将上文上述的各种实施例组合以提供进一步的实施例，可以根据上述详细描述对实施例进行这些和其他更改。通常，在以下权利要求中，所使用的术语不应该被解释为将权利要求限制于说明书和权利要求中所公开的具体实施例，而应该解释为包括所有可能的实施例以及这些权利要求所要求的等效物的全部范围。因此，权利要求不受本公开的限制。

Claims (6)

1.一种半导体器件，其特征在于，包括：
设置有经激光束加工的导电结构的至少一个半导体裸片；和
成型到所述至少一个半导体裸片上的封装成型结构，所述封装成型结构将所述至少一个半导体裸片和其上提供的所述导电结构的至少一部分进行包封。
2.根据权利要求1所述的半导体器件，其特征在于，所述导电结构中的至少一些导电结构延伸通过激光直接成型结构。
3.根据权利要求1所述的半导体器件，其特征在于，对所述激光直接成型结构进行激光束加工包括在所述激光直接成型结构中形成腔，并且所述导电结构包括所述激光直接成型材料中的腔的表面上的导电层。
4.根据权利要求1所述的半导体器件，其特征在于，包括：
成型到所述至少一个半导体裸片上的附加的激光直接成型结构的一层；和
在附加的激光直接成型结构的所述一层上的第二导电结构。
5.根据权利要求4所述的半导体器件，其特征在于，所述第二导电结构中的至少一些导电结构延伸通过附加的激光直接成型结构的所述一层。
6.根据权利要求4所述的半导体器件，其特征在于，所述导电结构通过所述至少一个半导体裸片与所述第二导电结构分隔开。
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