IT202200011561A1 - Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente - Google Patents

Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente Download PDF

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Publication number
IT202200011561A1
IT202200011561A1 IT102022000011561A IT202200011561A IT202200011561A1 IT 202200011561 A1 IT202200011561 A1 IT 202200011561A1 IT 102022000011561 A IT102022000011561 A IT 102022000011561A IT 202200011561 A IT202200011561 A IT 202200011561A IT 202200011561 A1 IT202200011561 A1 IT 202200011561A1
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IT
Italy
Prior art keywords
semiconductor device
semiconductor devices
manufacturing
manufacturing semiconductor
devices
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IT102022000011561A
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English (en)
Inventor
Michele Derai
Guendalina Catalano
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St Microelectronics Srl
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Publication date
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Priority to IT102022000011561A priority Critical patent/IT202200011561A1/it
Priority to US18/324,897 priority patent/US20230386980A1/en
Publication of IT202200011561A1 publication Critical patent/IT202200011561A1/it

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/05099Material
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    • H01L2224/241Disposition
    • H01L2224/24151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/82009Pre-treatment of the connector or the bonding area
    • H01L2224/8203Reshaping, e.g. forming vias
    • H01L2224/82035Reshaping, e.g. forming vias by heating means
    • H01L2224/82039Reshaping, e.g. forming vias by heating means using a laser
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    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
IT102022000011561A 2022-05-31 2022-05-31 Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente IT202200011561A1 (it)

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Application Number Priority Date Filing Date Title
IT102022000011561A IT202200011561A1 (it) 2022-05-31 2022-05-31 Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente
US18/324,897 US20230386980A1 (en) 2022-05-31 2023-05-26 Method of manufacturing semiconductor devices and corresponding semiconductor device

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IT102022000011561A IT202200011561A1 (it) 2022-05-31 2022-05-31 Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente

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Citations (10)

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Publication number Priority date Publication date Assignee Title
US20180342453A1 (en) 2017-05-23 2018-11-29 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding product
US20190115287A1 (en) 2017-10-12 2019-04-18 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices, corresponding device and circuit
US20200203264A1 (en) 2018-12-24 2020-06-25 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20200321274A1 (en) 2019-04-05 2020-10-08 Stmicroelectronics S.R.L. Method of manufacturing leadframes for semiconductor devices, corresponding leadframe and semicondctor device
US20210050226A1 (en) 2019-08-16 2021-02-18 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20210050299A1 (en) 2019-08-16 2021-02-18 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20210091030A1 (en) * 2019-09-25 2021-03-25 Intel Corporation Electroless-catalyst doped-mold materials for integrated-circuit die packaging architectures
US20210183748A1 (en) 2019-12-17 2021-06-17 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20210305203A1 (en) 2019-01-22 2021-09-30 Stmicroelectronics S.R.L. Semiconductor device and corresponding method of manufacture
US20220068741A1 (en) * 2020-08-27 2022-03-03 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180342453A1 (en) 2017-05-23 2018-11-29 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding product
US20190115287A1 (en) 2017-10-12 2019-04-18 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices, corresponding device and circuit
US20200203264A1 (en) 2018-12-24 2020-06-25 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20210305203A1 (en) 2019-01-22 2021-09-30 Stmicroelectronics S.R.L. Semiconductor device and corresponding method of manufacture
US20200321274A1 (en) 2019-04-05 2020-10-08 Stmicroelectronics S.R.L. Method of manufacturing leadframes for semiconductor devices, corresponding leadframe and semicondctor device
US20210050226A1 (en) 2019-08-16 2021-02-18 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20210050299A1 (en) 2019-08-16 2021-02-18 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20210091030A1 (en) * 2019-09-25 2021-03-25 Intel Corporation Electroless-catalyst doped-mold materials for integrated-circuit die packaging architectures
US20210183748A1 (en) 2019-12-17 2021-06-17 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding semiconductor device
US20220068741A1 (en) * 2020-08-27 2022-03-03 Stmicroelectronics S.R.L. Method of manufacturing semiconductor devices and corresponding device

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