IT202200011561A1 - Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente - Google Patents
Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente Download PDFInfo
- Publication number
- IT202200011561A1 IT202200011561A1 IT102022000011561A IT202200011561A IT202200011561A1 IT 202200011561 A1 IT202200011561 A1 IT 202200011561A1 IT 102022000011561 A IT102022000011561 A IT 102022000011561A IT 202200011561 A IT202200011561 A IT 202200011561A IT 202200011561 A1 IT202200011561 A1 IT 202200011561A1
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- semiconductor devices
- manufacturing
- manufacturing semiconductor
- devices
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05005—Structure
- H01L2224/05009—Bonding area integrally formed with a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05164—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/24247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82009—Pre-treatment of the connector or the bonding area
- H01L2224/8203—Reshaping, e.g. forming vias
- H01L2224/82035—Reshaping, e.g. forming vias by heating means
- H01L2224/82039—Reshaping, e.g. forming vias by heating means using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102022000011561A IT202200011561A1 (it) | 2022-05-31 | 2022-05-31 | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente |
US18/324,897 US20230386980A1 (en) | 2022-05-31 | 2023-05-26 | Method of manufacturing semiconductor devices and corresponding semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102022000011561A IT202200011561A1 (it) | 2022-05-31 | 2022-05-31 | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente |
Publications (1)
Publication Number | Publication Date |
---|---|
IT202200011561A1 true IT202200011561A1 (it) | 2023-12-01 |
Family
ID=82693977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT102022000011561A IT202200011561A1 (it) | 2022-05-31 | 2022-05-31 | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente |
Country Status (2)
Country | Link |
---|---|
US (1) | US20230386980A1 (it) |
IT (1) | IT202200011561A1 (it) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180342453A1 (en) | 2017-05-23 | 2018-11-29 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding product |
US20190115287A1 (en) | 2017-10-12 | 2019-04-18 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices, corresponding device and circuit |
US20200203264A1 (en) | 2018-12-24 | 2020-06-25 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20200321274A1 (en) | 2019-04-05 | 2020-10-08 | Stmicroelectronics S.R.L. | Method of manufacturing leadframes for semiconductor devices, corresponding leadframe and semicondctor device |
US20210050226A1 (en) | 2019-08-16 | 2021-02-18 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20210050299A1 (en) | 2019-08-16 | 2021-02-18 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20210091030A1 (en) * | 2019-09-25 | 2021-03-25 | Intel Corporation | Electroless-catalyst doped-mold materials for integrated-circuit die packaging architectures |
US20210183748A1 (en) | 2019-12-17 | 2021-06-17 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20210305203A1 (en) | 2019-01-22 | 2021-09-30 | Stmicroelectronics S.R.L. | Semiconductor device and corresponding method of manufacture |
US20220068741A1 (en) * | 2020-08-27 | 2022-03-03 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding device |
-
2022
- 2022-05-31 IT IT102022000011561A patent/IT202200011561A1/it unknown
-
2023
- 2023-05-26 US US18/324,897 patent/US20230386980A1/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180342453A1 (en) | 2017-05-23 | 2018-11-29 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding product |
US20190115287A1 (en) | 2017-10-12 | 2019-04-18 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices, corresponding device and circuit |
US20200203264A1 (en) | 2018-12-24 | 2020-06-25 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20210305203A1 (en) | 2019-01-22 | 2021-09-30 | Stmicroelectronics S.R.L. | Semiconductor device and corresponding method of manufacture |
US20200321274A1 (en) | 2019-04-05 | 2020-10-08 | Stmicroelectronics S.R.L. | Method of manufacturing leadframes for semiconductor devices, corresponding leadframe and semicondctor device |
US20210050226A1 (en) | 2019-08-16 | 2021-02-18 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20210050299A1 (en) | 2019-08-16 | 2021-02-18 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20210091030A1 (en) * | 2019-09-25 | 2021-03-25 | Intel Corporation | Electroless-catalyst doped-mold materials for integrated-circuit die packaging architectures |
US20210183748A1 (en) | 2019-12-17 | 2021-06-17 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding semiconductor device |
US20220068741A1 (en) * | 2020-08-27 | 2022-03-03 | Stmicroelectronics S.R.L. | Method of manufacturing semiconductor devices and corresponding device |
Also Published As
Publication number | Publication date |
---|---|
US20230386980A1 (en) | 2023-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT201900024292A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
TWI800456B (zh) | 一種用於背封矽片的方法和設備 | |
TWI799751B (zh) | 製造半導體裝置的方法及半導體裝置 | |
IT202200001649A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
TWI799905B (zh) | 半導體元件和半導體元件的製造方法 | |
IT201900022641A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore, apparato e dispositivo a semiconduttore corrispondenti | |
IT202200011561A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
IT202200009839A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
IT202200008891A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
IT202200008897A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
IT202200001646A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
IT202200016011A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
TWI801282B (zh) | 一種晶圓研磨設備 | |
IT202200008900A1 (it) | Dispositivo a semiconduttore e corrispondenti procedimenti | |
GB202215350D0 (en) | Semiconductor device and method for manufacturing semiconductor device | |
GB202219739D0 (en) | Semiconductor device module and method for manufacturing same | |
IT202200008903A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore, dispositivo e sistema corrispondenti | |
IT201900024232A1 (it) | Dispositivo a semiconduttore e corrispondente procedimento per fabbricare dispositivi a semiconduttore | |
IT201900022632A1 (it) | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente | |
TWI860055B (zh) | 半導體裝置及半導體裝置的製造方法 | |
TWI801099B (zh) | 半導體裝置及其製造方法 | |
TWI800845B (zh) | 半導體裝置及其製造方法 | |
TWI800408B (zh) | 半導體裝置及其製造方法 | |
TWI859719B (zh) | 半導體裝置及其製造方法 | |
IT201700087201A1 (it) | Dispositivo a semiconduttore e corrispondente metodo di fabbricazione di dispositivi a semiconduttore |