CN203368406U - 用于mems设备的前端电荷放大器及系统 - Google Patents

用于mems设备的前端电荷放大器及系统 Download PDF

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CN203368406U
CN203368406U CN2013201721287U CN201320172128U CN203368406U CN 203368406 U CN203368406 U CN 203368406U CN 2013201721287 U CN2013201721287 U CN 2013201721287U CN 201320172128 U CN201320172128 U CN 201320172128U CN 203368406 U CN203368406 U CN 203368406U
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charge amplifier
mems
frequency
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约恩·奥普里斯
H·陶
S·李
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Shanghai Sirui Technology Co ltd
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    • H03—ELECTRONIC CIRCUITRY
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    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
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    • H03—ELECTRONIC CIRCUITRY
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    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
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    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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    • H03F3/70—Charge amplifiers
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Abstract

本申请涉及MEMS设备前端电荷放大器。除了其他方面以外，本申请讨论了用于前端电荷放大器的装置和方法。在某些示例中，一种用于MEMS设备的前端电荷放大器可包括电荷放大器和反馈电路，该电荷放大器配置成连接到所述MEMS设备并提供所述MEMS设备的检测质量块的感测信息，该反馈电路配置成接收所述感测信息并向所述电荷放大器的输入端提供反馈，其中所述电荷放大器包括传递函数，该传递函数具有在第一频率处的第一极点、在第二频率处的第二极点和在第三频率处的一个零点。

Description

用于MEMS设备的前端电荷放大器及系统
技术领域
本申请讨论了微机电系统（MEMS），尤其是一种用于MEMS设备的前端放大器。 
背景技术
现有的将来自电容式MEMS传感器的电荷转换成电压的放大器具有噪声高、失真度高和偏移大等缺点。 
实用新型内容
本实用新型的目的之一在于提供一种用于MEMS设备的前端电荷放大器及系统。该前端电荷放大器与现有的将来自电容式MEMS传感器的电荷转换成电压的放大器相比，能够减少噪声、失真和偏移，并提供改进的增益漂移和相位漂移的温度稳定性。 
除了其他方面以外，本申请还讨论了用于前端电荷放大器的装置和方法。在某些示例中，一种用于MEMS设备的前端电荷放大器可包括电荷放大器和反馈电路，该电荷放大器配置成连接到所述MEMS设备并提供所述MEMS设备的检测质量块的感测信息，该反馈电路配置成接收所述感测信息并向所述电荷放大器的输入端提供反馈，其中所述电荷放大器包括传递函数，该传递函数具有第一频率处的第一极点、第二频率处的第二极点和第三频率处的一个零点。 
在某些示例中，一种用于MEMS设备的系统，包括微机电系统（MEMS）传感器和前端电荷放大器。该前端电荷放大器配置成提供所述MEMS传感器的感测信息，该前端电荷放大器包括电荷放大器和反馈电路，该电荷放大器配置成连接到所述MEMS传感器并提供该MEMS传感器的检测质量块的感测信息，该反馈电路，配置成接收所述感测信息并向所述电荷放大器的输入端提供反馈， 其中所述电荷放大器包括传递函数，该传递函数具有在第一频率处的第一极点、在第二频率处的第二极点和在第三频率处的零点。 
本实用新型的前端电荷放大器与现有的将来自电容式MEMS传感器的电荷转换成电压的放大器相比，能够减少噪声、失真和偏移，并提供改进的增益漂移和相位漂移的温度稳定性。 
实用新型内容部分旨在提供对本专利申请的主题的概述，并非旨在提供本申请的排他性或穷举性说明。本文包括具体实施方式以提供与本专利申请有关的进一步信息。 
附图说明
附图（这些附图不一定是按照比例绘制的）中，相同的数字能够描述不同视图中的相似部件。具有不同字母后缀的相同数字能够表示类似部件的不同实例。附图通过示例而非限制的方式概括地示出了本申请中讨论的各个实施例。 
图1概括地示出了示例性前端放大器； 
图2概括地示出了示例性前端放大器的示例放大级； 
图3概括地示出了在反馈回路中使用跨导器（transconductor）和电流衰减器的示例性前端放大器； 
图4A和图4B示出了对单极电荷放大器和具有双极和单一零点的示例性前端电荷放大器的大体对比。 
具体实施方式
本申请已经意识到一种改进型前端放大器，该改进型前端放大器与微机电系统（MEMS）设备，例如MEMS陀螺仪，一起使用。该前端放大器可将来自MEMS设备电极的电荷转换为一电压，该电压被进一步处理以协助提供用于驱动所述MEMS设备的反馈或协助感测（sense）所述MEMS设备的移动。所述改进型前端放大器与现有的将来自电容式MEMS传感器的电荷转换成电压的放大器相比，能够减少噪声、失真和偏移，并提供改进的增益漂移和相位漂移 的温度稳定性。 
图1概括地示出了示例性前端放大器100。在某些示例中，该前端放大器100可用于将电容式MEMS设备传感器的电荷转换成电压以协助驱动MEMS设备（例如MEMS陀螺仪101）的检测质量块（proof mass）102，或协助提供关于该MEMS陀螺仪101移动的指示。在某些示例中，前端放大器100可从MEMS陀螺仪101的一对电容传感器电极103处接收差分感测信号，并可提供代表电容传感器电极103上的电荷的差分电压（VOUT）。在某些示例中，电容传感器电极103可与所述MEMS设备的检测质量块相关联，所述感测信号可提供关于所述检测质量块的位置和移动的感测信息。 
在一个示例中，前端放大器100可包括连接在前端放大器100的输入端和前端放大器100的输出端之间的反馈回路104。在某些示例中，反馈回路104可包括诸如可调电容器之类的可调电容（CF）。在一个示例中，反馈回路104可包括电阻器网络105和基于电流的参考电阻器106，该基于电流的参考电阻器106可包括电流镜107。在某些示例中，电阻器网络105和基于电流的参考电阻器106可与可调电容（CF）并联连接。在某些示例中，可利用可调电容（CF）设置前端放大器100的总增益。在一个示例中，由基于电流的参考电阻提供的电流的值也可随可调电容（CF）改变，以使前端放大器100的闭合回路极点位置不发生改变，从而保留了在预定频率处或预定频率范围内（例如MEMS陀螺仪101的共振频率处）的相位关系。在某些示例中，前端放大器100可包括多个放大级，例如第一级108、第二级109和第三级110。 
图2概括地示出了示例性多级前端放大器200的示例放大级。在某些示例中，多级前端放大器200可包括第一放大级208、第二放大级209和第三放大级210。在一些示例中，三个放大级208、209、210的传递函数可包括两个极点和一个零点。在一个示例中，第一放大级208可提供低噪声的直线或固定增益。在一个示例中，第一放大级208的增益可大约为10。在某些示例中，第二放大级209可提供包括极点的传递函数。在一些示例中，第二放大级209可包括配置成调整回路增益系数并保证反馈回路稳定性的可变增益。在一个示例中， 第二放大级209可具有大约25微安倍/伏特（uA/V）到大约250uA/V的增益。在一个示例中，第二放大级209可包括具有反馈回路的放大器212，该反馈回路具有电容元件211。应当理解，上述提供的增益为示例性增益，只要不偏离本申请主题的范围，其他增益也是可以的。第三放大级210可提供包括极点和一个零点的传递函数。在一个示例中，第三放大级210可包括放大器214及在反馈回路中的第一电容元件215，并包括连接到第三放大级210的输入端并配置成对到第三放大级210的输入信号进行接受的第二电容元件216。在某些示例中，第二电容元件216可通过电阻元件连接第三放大级210的输入信号。在一个示例中，第三放大级210可接收第二放大级209的输出，该第二放大级可接收第一放大级208的输出。应当理解的是，可以在不偏离本申请主题范围的情况下对放大级进行不同的顺序排列，包括对包括极点和零点的放大级进行不同的顺序排列。应当理解的是，在不偏离本申请主题范围的情况下，前端放大器可包括更多或更少的放大级。 
除了上述改进以外，该示例性前端放大器可提供低的Δ增益/增益漂移vs.温度（Δgain/gain drift versus temperature）（额外的40dB开环增益）。在某些示例中，前端放大器可提供低变化的Δ相位漂移vs.温度（Δphase drift versus temperature）（与单极前端放大器相比，是5-50倍的改进）。在某些示例中，该前端放大器可提供低输出偏移。在一些示例中，多级前端电荷放大器200可提供至少60dB的增益、在约2Hz处的高通滤波拐角和高达20MHz的闭环带宽，以使在20KHz处的相位不会因RC随温度的变化而漂移太多。多级前端电荷放大器200中每一级的增益可通过电阻比率设置，以提供恒定的增益vs.温度。 
图3概括地示出了在反馈回路304中使用跨导器（transconductor）317和电流衰减器318的示例性前端放大器300。该前端放大器300可包括三级放大器319，该三级放大器319具有包括两个极点和一个零点的传递函数。该前端放大器可用于处理从MEMS设备接收的电容信号，该MEMS设备例如为MEMS陀螺仪（未示出）。与图1的示例性前端放大器相比，使用跨导器317将电压信号转换成电流信号可改善前端放大器300的性能，因为基于电流的参考电阻器 106可使输入信号非线性地失真，而跨导器317不会使感测信号在靠近期望频率处非线性失真。在某些示例中，前端放大器300可包括共模反馈电路320，以稳定前端放大器300的差分输入的共模电压。在一些示例中，该共模反馈电路320可将共模电压设置为共模参考（ref）。 
在某些示例中，根据本申请主题的前端电荷放大器可为MEMS设备感测信号提供改进的处理性能。例如，与现有的利用单极传递函数的前端放大器相比，具有包括两个极点和一个零点的传递函数的前端放大器可减少感测信号在或接近期望频率处或期望频率范围内的相移和信号衰减。图4A和4B示出了单极电荷放大器401和具有两个极点和单一零点的示例性前端电荷放大器402的大体对比。在一个示例中，如图4A所示，与单极前端放大器的80dB DC增益相比，示例性前端电荷放大器与例如具有大约20KHz的陀螺仪共振频率的MEMS陀螺仪一起，可提供100dB直流（DC）增益。图4A和图4B的曲线来自具有两个20KHz极点和一个2MHz零点的示例性前端电荷放大器和具有2KHz单一极点的单极前端放大器。应当理解的是，在不偏离本申请主题范围的情况下，其它极点和零点频率也是可以的，包括但不限于低于或接近MEMS设备的共振频率的极点频率。在某些示例中，选择该极点和零点频率的目的可以是提供改进的相位和增益稳定性。在一些示例中，选择该极点和零点频率的目的可以是减小噪声带宽。图4B示出了单极电荷放大器401的开环频率相位特征与具有两个极点和单一零点的示例性电荷放大器402的开环频率相位特征的对比。就相移来讲，相比于单极前端放大器将相移降低到-57.3毫度（mdeg），该示例性前端放大器可将相移降低到-1.2mdeg。 
补充注释
示例1中，一种装置可包括电荷放大器和反馈电路，该电荷放大器配置成连接到微机电系统（MEMS）设备并提供该MEMS设备的检测质量块的感测信息，该反馈电路配置成接收所述感测信息，并向所述电荷放大器的输入端提供反馈，其中所述电荷放大器包括传递函数，该传递函数具有在第一频率处的第 一极点、在第二频率处的第二极点和在第三频率处的一个零点。 
示例2中，示例1所述的第一频率和第二频率等于或低于所述检测质量块的共振频率。 
示例3中，示例1和2中任一个或多个所述的第三频率可选地基本高于所述第一频率和所述第二频率。 
示例4中，示例1-3中任一个或多个所述的两个极点和所述零点可选地配置成将所述感测信息在预定频率范围内的相移基本减小为0。 
示例5中，示例1-4中任一个或多个所述的电荷放大器可选地包括多级电荷放大器。 
示例6中，示例1-5中任一个或多个所述的多级电荷放大器可选地包括配置成提供固定增益的第一放大级。 
示例7中，示例1-6中任一个或多个所述的多级电荷放大器可选地包括第二放大级，该第二放大级具有包括所述第一极点的传递函数。 
示例8中，示例1-7中任一个或多个所述的第二放大级的增益可选地为可变增益。 
示例9中，示例1-8中任一个或多个所述的多级电荷放大器可选地包括第三放大级，该第三放大级具有包括所述第二极点和所述零点的传递函数。 
示例10中，示例1-9中任一个或多个所述的反馈电路可选地包括可调电容。 
示例11中，示例1-10中任一个或多个所述的反馈电路可选地包括电阻器网络，该电阻器网络包括：电流镜，该电流镜连接到所述电荷放大器的所述输入端；第一反馈电阻器，该第一反馈电阻器连接到所述电荷放大器的输出端，并与所述电流镜串联而连接到所述电荷放大器的所述输入端；以及第二反馈电阻器，该第二反馈电阻器具有连接到电源的第一端和连接到所述电流镜和所述第一反馈电阻器的第二端。 
示例12中，示例1-11中任一个或多个所述的反馈电路可选地包括：电流衰减器，该电流衰减器连接到所述电荷放大器的所述输入端；以及跨导器，该跨导器连接到所述电流镜和所述电荷放大器的输出端，该跨导器配置为提供代 表所述感测信息的电流信号。 
示例13中，一种方法可包括：从微机电系统（MEMS）设备接收感测信号；使用所述感测信号和放大器提供代表所述MEMS设备的电容的电压，该放大器具有在第一频率处的第一传递函数极点、在第二频率处的第二传递函数极点和在第三频率处的一个传递函数零点。 
示例14中，示例1-13中任一个或多个所述的接收感测信号可选地包括：接收与所述MEMS设备的检测质量块相关联的感测信号，其中所述第一频率和所述第二频率低于或大约等于所述检测质量块的共振频率。 
示例15中，示例1-14中任一个或多个所述的提供代表所述电容的电压可选地包括：利用两个传递函数极点和所述传递函数零点，在预定频率范围内提供所述感测信号和所述电压之间的几乎为零的相移。 
示例16中，示例1-15中任一个或多个所述的方法可选地包括：利用连接到所述放大器的输出端的可调电容向所述放大器的输入端提供第一反馈。 
示例17中，示例1-16中任一个或多个所述的方法可选地包括：利用代表所述感测信息的电流信号向所述放大器的输入端提供第二反馈。 
示例18中，示例1-17中任一个或多个所述的提供第二反馈可选地包括：利用跨导器将所述感测信息由电压信号转换成电流信号；以及使用电流衰减器衰减所述电流信号以向所述输入端提供所述第二反馈。 
示例19中，一种系统可包括微机电系统（MEMS）传感器和配置成提供所述MEMS传感器的感测信息的前端电荷放大器。该前端电荷放大器可包括电荷放大器和反馈电路，该电荷放大器配置成连接到所述MEMS传感器，并提供该MEMS传感器的检测质量块的感测信息，该反馈电路配置成接收所述感测信息，并向所述电荷放大器的输入端提供反馈，其中所述电荷放大器包括传递函数，该传递函数具有在第一频率处的第一极点、在第二频率处的第二极点和在第三频率处的零点。 
示例20中，示例1-19中任一个或任意多个所述的MEMS传感器包括MEMS陀螺仪。 
上述详细说明书参照了附图，附图也是所述详细说明书的一部分。附图以图解的方式显示了可应用本申请的具体示例。这些示例在本申请中被称作“示例”。这些示例可包括除所示或描述的元件以外的元件。但是，本申请还考虑了其中只提供那些所示或所描述的（所示出或所描述的一个或多个方面）元件的示例。并且，相对于特定示例（或该示例的一个或多个方面），或相对于本申请所示或所描述的其他示例（该其它示例的一个或多个方面），本实用新型还考虑了利用那些所示出的或所描述的元件的任意组合或变换的示例。 
本申请所涉及的所有出版物、专利及专利文件全部作为本申请的参考内容，尽管它们是分别加以参考的。如果本申请与参考文件之间存在用途差异，则将参考文件的用途视作本申请的用途的补充，若两者之间存在不可调和的差异，则以本申请的用途为准。 
在本申请中，与专利文件通常使用的一样，术语“一”或“某一”表示包括一个或多个，但其他情况或在使用“至少一个”或“一个或多个”时应除外。在本申请中，除非另外指明，否则使用术语“或”指无排他性的或者，使得“A或B”包括：“A但不是B”、“B但不是A”以及“A和B”。在所附权利要求中，术语“包含”和“在其中”等同于各个术语“包括”和“其中”的通俗英语。同样，在所附权利要求书中，术语“包含”和“包括”是开放性的，即，系统、设备、物品或步骤包括除了权利要求中这种术语之后所列出的那些部件以外的部件的，依然视为落在该条权利要求的范围之内。而且，在下面的权利要求中，术语“第一”、“第二”和“第三”等仅仅用作标签，并非对对象有数量要求。 
本申请描述的方法示例可至少在部分上由机器或计算机执行。一些示例可包括以可操作指令编码的机器可读介质或计算机可读介质，以配置电子设备执行上述示例中描述的方法。所述方法的实施可包括例如微码的代码，汇编语言，高级语言代码，等等。这些代码可包括用于执行各种方法的计算机可读指令。所述代码可构成计算机程序产品的一部分。另外，在一个示例中，所述代码可以例如在执行期间或其他时间有形存储于一个或多个易失去的、持久的或不易失去的计算机可读介质中。这限额有形计算机克服介质示例可包括，但不限于， 硬盘、可移动磁盘、可移动光盘（例如高密度磁盘和数字化视频光盘），磁带盒，存储卡或杆，随机存储器，只读存储器，等等。 
上述说明的作用在于解说而非限制。例如，上述示例（或示例的一个或多个方面）可结合使用。可以在理解上述说明书的基础上，利用现有技术的某种常规技术来执行其他示例。遵照37C.F.R.§1.72（b）的规定提供摘要，允许读者快速确定本技术公开的性质。提交本摘要时要理解的是该摘要不用于解释或限制权利要求的范围或意义。同样，在上面的具体实施方式中，各种特征可归类成将本公开合理化。这不应理解成未要求的公开特征对任何权利要求必不可少。相反，本申请的主题可在于特征少于特定公开的示例的所有特征。因此，下面的权利要求据此并入具体实施方式中，每个权利要求均作为一个单独的示例，并且应当理解的是，这些示例可以多种结合或变换方式互相结合。应参看所附的权利要求，以及这些权利要求所享有的等同物的所有范围，来确定本实用新型的范围。 

Claims (14)

1.一种用于MEMS设备的前端电荷放大器，包括： 
电荷放大器，配置成连接到微机电系统MEMS设备并提供该MEMS设备的检测质量块的感测信息；以及 
反馈电路，配置成接收所述感测信息，并向所述电荷放大器的输入端提供反馈； 
其中所述电荷放大器包括传递函数，该传递函数具有在第一频率处的第一极点、在第二频率处的第二极点和在第三频率处的一个零点。 
2.如权利要求1所述的用于MEMS设备的前端电荷放大器，其中，所述第一频率和所述第二频率等于或低于所述检测质量块的共振频率。 
3.如权利要求1所述的用于MEMS设备的前端电荷放大器，其中，所述第三频率基本高于所述第一频率和所述第二频率。 
4.如权利要求1所述的用于MEMS设备的前端电荷放大器，其中，所述两个极点和所述零点配置成将所述感测信息在预定频率范围内的相移基本减小为0。 
5.如权利要求1所述的用于MEMS设备的前端电荷放大器，其中，所述电荷放大器包括多级电荷放大器。 
6.如权利要求5所述的用于MEMS设备的前端电荷放大器，其中，所述多级电荷放大器包括配置成提供固定增益的第一放大级。 
7.如权利要求6所述的用于MEMS设备的前端电荷放大器，其中，所述多级电荷放大器包括第二放大级，该第二放大级具有包括所述第一极点的传递函数。 
8.如权利要求7所述的用于MEMS设备的前端电荷放大器，其中，所述第二放大级的增益为可变增益。 
9.如权利要求7所述的用于MEMS设备的前端电荷放大器，其中，所述多级电荷放大器包括第三放大级，该第三放大级具有包括所述第二极点和所述 零点的传递函数。 
10.如权利要求1所述的用于MEMS设备的前端电荷放大器，其中，所述反馈电路包括可调电容。 
11.如权利要求1所述的用于MEMS设备的前端电荷放大器，其中，所述反馈电路包括电阻器网络，该电阻器网络包括： 
电流镜，该电流镜连接到所述电荷放大器的所述输入端； 
第一反馈电阻器，该第一反馈电阻器连接到所述电荷放大器的输出端，并与所述电流镜串联而连接到所述电荷放大器的所述输入端；以及 
第二反馈电阻器，该第二反馈电阻器具有连接到电源的第一端和连接到所述电流镜和所述第一反馈电阻器的第二端。 
12.如权利要求1所述的用于MEMS设备的前端电荷放大器，其中，所述反馈电路包括： 
电流衰减器，该电流衰减器连接到所述电荷放大器的所述输入端；以及 
跨导器，该跨导器连接到所述电流镜和所述电荷放大器的输出端，该跨导器配置为提供代表所述感测信息的电流信号。 
13.一种用于MEMS设备的系统，包括： 
微机电系统MEMS传感器；以及 
前端电荷放大器，配置成提供所述MEMS传感器的感测信息，该前端电荷放大器包括： 
电荷放大器，配置成连接到所述MEMS传感器，并提供该MEMS传感器的检测质量块的感测信息；以及 
反馈电路，配置成接收所述感测信息，并向所述电荷放大器的输入端提供反馈； 
其中所述电荷放大器包括传递函数，该传递函数具有在第一频率处的第一极点、在第二频率处的第二极点和在第三频率处的零点。 
14.如权利要求13所述的用于MEMS设备的系统，其中，所述MEMS传感器包括MEMS陀螺仪。 
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CN110120787A (zh) 2019-08-13
EP2648334B1 (en) 2020-06-10
KR102058489B1 (ko) 2019-12-23
KR20130113385A (ko) 2013-10-15
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CN110120787B (zh) 2023-07-25

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