CN102364671B - 制造硅通孔的方法 - Google Patents
制造硅通孔的方法 Download PDFInfo
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- CN102364671B CN102364671B CN 201110343866 CN201110343866A CN102364671B CN 102364671 B CN102364671 B CN 102364671B CN 201110343866 CN201110343866 CN 201110343866 CN 201110343866 A CN201110343866 A CN 201110343866A CN 102364671 B CN102364671 B CN 102364671B
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- mask
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- stepped bore
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 38
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000013459 approach Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201110343866 CN102364671B (zh) | 2011-11-03 | 2011-11-03 | 制造硅通孔的方法 |
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CN 201110343866 CN102364671B (zh) | 2011-11-03 | 2011-11-03 | 制造硅通孔的方法 |
Publications (2)
Publication Number | Publication Date |
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CN102364671A CN102364671A (zh) | 2012-02-29 |
CN102364671B true CN102364671B (zh) | 2013-07-24 |
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CN 201110343866 Active CN102364671B (zh) | 2011-11-03 | 2011-11-03 | 制造硅通孔的方法 |
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CN (1) | CN102364671B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012037538A2 (en) | 2010-09-18 | 2012-03-22 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
DE112011103124T5 (de) | 2010-09-18 | 2013-12-19 | Fairchild Semiconductor Corporation | Biegelager zum Verringern von Quadratur für mitschwingende mikromechanische Vorrichtungen |
US9156673B2 (en) | 2010-09-18 | 2015-10-13 | Fairchild Semiconductor Corporation | Packaging to reduce stress on microelectromechanical systems |
CN103221333B (zh) | 2010-09-18 | 2017-05-31 | 快捷半导体公司 | 多晶片mems封装 |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
KR101332701B1 (ko) | 2010-09-20 | 2013-11-25 | 페어차일드 세미컨덕터 코포레이션 | 기준 커패시터를 포함하는 미소 전자기계 압력 센서 |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
KR102058489B1 (ko) | 2012-04-05 | 2019-12-23 | 페어차일드 세미컨덕터 코포레이션 | 멤스 장치 프론트 엔드 전하 증폭기 |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
CN104465445B (zh) * | 2014-12-10 | 2018-04-17 | 华进半导体封装先导技术研发中心有限公司 | 一种硅通孔底部衬垫露出的检测方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6867073B1 (en) * | 2003-10-21 | 2005-03-15 | Ziptronix, Inc. | Single mask via method and device |
CN102214624A (zh) * | 2011-05-17 | 2011-10-12 | 北京大学 | 一种具有通孔的半导体结构及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7825024B2 (en) * | 2008-11-25 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming through-silicon vias |
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- 2011-11-03 CN CN 201110343866 patent/CN102364671B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6867073B1 (en) * | 2003-10-21 | 2005-03-15 | Ziptronix, Inc. | Single mask via method and device |
CN102214624A (zh) * | 2011-05-17 | 2011-10-12 | 北京大学 | 一种具有通孔的半导体结构及其制造方法 |
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CN102364671A (zh) | 2012-02-29 |
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Effective date of registration: 20191028 Address after: 214028 Jiangsu province Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park building D1 Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: 200331 room 155-2, ginkgo Road, Shanghai, Putuo District, China, 4 Patentee before: Shanghai State Intellectual Property Services Co.,Ltd. |
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