CN1983028B - 掩膜坯及变换掩膜的制造方法 - Google Patents

掩膜坯及变换掩膜的制造方法 Download PDF

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Publication number
CN1983028B
CN1983028B CN2006101727019A CN200610172701A CN1983028B CN 1983028 B CN1983028 B CN 1983028B CN 2006101727019 A CN2006101727019 A CN 2006101727019A CN 200610172701 A CN200610172701 A CN 200610172701A CN 1983028 B CN1983028 B CN 1983028B
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CN
China
Prior art keywords
substrate
diaphragm
resist
forms
against corrosion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2006101727019A
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English (en)
Chinese (zh)
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CN1983028A (zh
Inventor
小林英雄
樋口孝雄
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Hoya Corp
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Hoya Corp
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Publication of CN1983028A publication Critical patent/CN1983028A/zh
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Publication of CN1983028B publication Critical patent/CN1983028B/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN2006101727019A 2003-09-29 2004-09-24 掩膜坯及变换掩膜的制造方法 Expired - Fee Related CN1983028B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003-338533 2003-09-29
JP2003338533 2003-09-29
JP2003338533 2003-09-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100118724A Division CN100537053C (zh) 2003-09-29 2004-09-24 掩膜坯及掩膜坯的制造方法

Publications (2)

Publication Number Publication Date
CN1983028A CN1983028A (zh) 2007-06-20
CN1983028B true CN1983028B (zh) 2012-07-25

Family

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Family Applications (2)

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CN2006101727019A Expired - Fee Related CN1983028B (zh) 2003-09-29 2004-09-24 掩膜坯及变换掩膜的制造方法
CNB2004100118724A Expired - Fee Related CN100537053C (zh) 2003-09-29 2004-09-24 掩膜坯及掩膜坯的制造方法

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Country Status (6)

Country Link
US (1) US7674561B2 (enExample)
JP (2) JP2011040770A (enExample)
KR (5) KR20050031425A (enExample)
CN (2) CN1983028B (enExample)
DE (1) DE102004047355B4 (enExample)
TW (2) TWI387846B (enExample)

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TW200609666A (en) * 2004-07-09 2006-03-16 Hoya Corp Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
US7678511B2 (en) * 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
KR100780814B1 (ko) * 2006-08-16 2007-11-30 주식회사 에스앤에스텍 차폐판 및 이를 구비한 레지스트 코팅장치
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
JP5393972B2 (ja) * 2007-11-05 2014-01-22 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
KR101654515B1 (ko) * 2009-07-01 2016-09-07 주식회사 에스앤에스텍 포토마스크 블랭크, 포토마스크 블랭크의 제조방법 및 포토마스크
CN101968606B (zh) * 2009-07-27 2013-01-23 北京京东方光电科技有限公司 掩膜基板和边框胶固化系统
KR102167485B1 (ko) * 2012-09-13 2020-10-19 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
KR102239197B1 (ko) * 2012-09-13 2021-04-09 호야 가부시키가이샤 마스크 블랭크의 제조 방법 및 전사용 마스크의 제조 방법
CN106610568A (zh) * 2015-10-27 2017-05-03 沈阳芯源微电子设备有限公司 一种涂胶显影工艺模块及该模块内环境参数的控制方法
JP6504996B2 (ja) * 2015-11-04 2019-04-24 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置、及びコンピュータ読み取り可能な記録媒体
JP7038211B2 (ja) * 2018-06-29 2022-03-17 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及びフォトマスク
CN112655074B (zh) * 2018-09-10 2024-07-12 东京毅力科创株式会社 涂布膜形成方法以及涂布膜形成装置
JP7154572B2 (ja) * 2018-09-12 2022-10-18 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
JP7202901B2 (ja) * 2019-01-18 2023-01-12 東京エレクトロン株式会社 塗布膜形成方法及び塗布膜形成装置
TWI699580B (zh) * 2019-03-07 2020-07-21 友達光電股份有限公司 陣列基板
KR102743196B1 (ko) 2023-04-17 2024-12-16 에스케이엔펄스 주식회사 블랭크 마스크 및 이의 제조 방법
CN117406314A (zh) * 2023-12-01 2024-01-16 华中光电技术研究所(中国船舶集团有限公司第七一七研究所) 一种球面元件上抛光平面保护漆的涂覆方法
CN120233623A (zh) * 2023-12-29 2025-07-01 Sk恩普士有限公司 空白掩模及制造空白掩模的方法

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Also Published As

Publication number Publication date
TWI391779B (zh) 2013-04-01
KR20080075816A (ko) 2008-08-19
TWI387846B (zh) 2013-03-01
KR100976977B1 (ko) 2010-08-23
US7674561B2 (en) 2010-03-09
CN1983028A (zh) 2007-06-20
US20050069787A1 (en) 2005-03-31
KR101047646B1 (ko) 2011-07-07
TW200837492A (en) 2008-09-16
KR20070039909A (ko) 2007-04-13
CN100537053C (zh) 2009-09-09
DE102004047355A1 (de) 2005-04-28
CN1605397A (zh) 2005-04-13
KR20050031425A (ko) 2005-04-06
KR20100085003A (ko) 2010-07-28
JP2011040770A (ja) 2011-02-24
JP2015111312A (ja) 2015-06-18
KR101045177B1 (ko) 2011-06-30
TW200517786A (en) 2005-06-01
KR20070039908A (ko) 2007-04-13
DE102004047355B4 (de) 2022-03-10

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