CN1934404A - 用于对处理物体进行加工的系统 - Google Patents
用于对处理物体进行加工的系统 Download PDFInfo
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- CN1934404A CN1934404A CNA200480021056XA CN200480021056A CN1934404A CN 1934404 A CN1934404 A CN 1934404A CN A200480021056X A CNA200480021056X A CN A200480021056XA CN 200480021056 A CN200480021056 A CN 200480021056A CN 1934404 A CN1934404 A CN 1934404A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (166)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/629,400 US7115837B2 (en) | 2003-07-28 | 2003-07-28 | Selective reflectivity process chamber with customized wavelength response and method |
US10/629,400 | 2003-07-28 | ||
PCT/US2004/023352 WO2005013325A2 (en) | 2003-07-28 | 2004-07-21 | System for processing a treatment object |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1934404A true CN1934404A (zh) | 2007-03-21 |
CN1934404B CN1934404B (zh) | 2011-12-14 |
Family
ID=34103614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200480021056XA Active CN1934404B (zh) | 2003-07-28 | 2004-07-21 | 用于对处理物体进行加工的系统 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7115837B2 (zh) |
JP (1) | JP2007500447A (zh) |
KR (1) | KR101124051B1 (zh) |
CN (1) | CN1934404B (zh) |
DE (1) | DE112004001402B4 (zh) |
TW (1) | TWI365499B (zh) |
WO (1) | WO2005013325A2 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102576676A (zh) * | 2009-10-09 | 2012-07-11 | 应用材料公司 | 用于改善控制加热和冷却基板的设备与方法 |
CN104979166A (zh) * | 2014-04-10 | 2015-10-14 | 应用材料公司 | 具有辐射源补偿的基座 |
CN105393339A (zh) * | 2013-06-21 | 2016-03-09 | 应用材料公司 | 用于半导体处理腔室的吸收反射体 |
CN105679695A (zh) * | 2011-11-03 | 2016-06-15 | 应用材料公司 | 快速热处理腔室 |
CN108292617A (zh) * | 2015-12-30 | 2018-07-17 | 马特森技术有限公司 | 用于毫秒退火系统的室壁加热 |
CN111629884A (zh) * | 2018-01-24 | 2020-09-04 | 惠普发展公司,有限责任合伙企业 | 用于构造材料加热的方法和设备 |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7470142B2 (en) * | 2004-06-21 | 2008-12-30 | Sang-Yun Lee | Wafer bonding method |
EP2381011B1 (en) * | 2003-08-04 | 2012-12-05 | LG Display Co., Ltd. | Evaporation source for evaporating an organic electroluminescent layer |
JP4069877B2 (ja) * | 2004-02-03 | 2008-04-02 | ソニー株式会社 | 電子機器およびハードディスク・ドライブ収納装置 |
US20060291833A1 (en) * | 2005-06-01 | 2006-12-28 | Mattson Techonology, Inc. | Switchable reflector wall concept |
US7745762B2 (en) | 2005-06-01 | 2010-06-29 | Mattson Technology, Inc. | Optimizing the thermal budget during a pulsed heating process |
JP2007012734A (ja) * | 2005-06-29 | 2007-01-18 | Matsushita Electric Ind Co Ltd | プラズマエッチング装置及びプラズマエッチング方法 |
DE102005038672A1 (de) * | 2005-08-16 | 2007-02-22 | Mattson Thermal Products Gmbh | Vorrichtung zum thermischen Behandeln von Halbleitersubstraten |
US20070148367A1 (en) * | 2005-12-22 | 2007-06-28 | Lewis Daniel J | Chemical vapor deposition apparatus and methods of using the apparatus |
US20150361557A1 (en) * | 2014-06-17 | 2015-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
DE102006029252A1 (de) * | 2006-06-26 | 2007-12-27 | Advanced Photonics Technologies Ag | Anlage zur Bearbeitung eines Werkstücks mit UV-, NIR- oder IR-Strahlung |
US20080166694A1 (en) * | 2007-01-09 | 2008-07-10 | Michael Weber | Plant tissue packaging process |
US7939192B2 (en) * | 2007-06-20 | 2011-05-10 | Tesla Motors, Inc. | Early detection of battery cell thermal event |
US20090018805A1 (en) * | 2007-07-12 | 2009-01-15 | Michael Weber | Optically selective coatings for plant tissues |
JP2009038230A (ja) * | 2007-08-02 | 2009-02-19 | Ushio Inc | 光照射式加熱処理装置 |
DE102007048564A1 (de) * | 2007-10-09 | 2009-04-23 | Heraeus Noblelight Gmbh | Vorrichtung für eine Bestrahlungseinheit |
US20090186768A1 (en) * | 2007-11-16 | 2009-07-23 | Hoobler Ray J | Sunscreen formulations for use in the production of organic crops |
WO2009067190A1 (en) * | 2007-11-19 | 2009-05-28 | Purfresh, Inc. | Systems and methods for applying particle films to control stress on plant tissues |
KR20100139092A (ko) * | 2008-03-26 | 2010-12-31 | 지티 솔라 인코퍼레이티드 | 금-코팅된 폴리실리콘 반응기 시스템 및 방법 |
US8283607B2 (en) * | 2008-04-09 | 2012-10-09 | Applied Materials, Inc. | Apparatus including heating source reflective filter for pyrometry |
US8367983B2 (en) * | 2008-04-09 | 2013-02-05 | Applied Materials, Inc. | Apparatus including heating source reflective filter for pyrometry |
US7758238B2 (en) * | 2008-06-30 | 2010-07-20 | Intel Corporation | Temperature measurement with reduced extraneous infrared in a processing chamber |
US8452166B2 (en) * | 2008-07-01 | 2013-05-28 | Applied Materials, Inc. | Apparatus and method for measuring radiation energy during thermal processing |
CN101672934A (zh) * | 2008-09-11 | 2010-03-17 | 鸿富锦精密工业(深圳)有限公司 | 镀膜设备 |
US8147137B2 (en) * | 2008-11-19 | 2012-04-03 | Applied Materials, Inc. | Pyrometry for substrate processing |
US8129284B2 (en) * | 2009-04-28 | 2012-03-06 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment method and heat treatment apparatus for heating substrate by light irradiation |
US10060180B2 (en) | 2010-01-16 | 2018-08-28 | Cardinal Cg Company | Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology |
US10000411B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductivity and low emissivity coating technology |
US10000965B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductive coating technology |
US9068133B2 (en) * | 2010-02-19 | 2015-06-30 | Enerpy B.V. | Photonic radiolysis of waste materials |
US8609517B2 (en) * | 2010-06-11 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOCVD for growing III-V compound semiconductors on silicon substrates |
WO2012009636A1 (en) * | 2010-07-15 | 2012-01-19 | Despatch Industries Limited Partnership | Firing furnace configuration for thermal processing system |
JP5885404B2 (ja) * | 2010-08-04 | 2016-03-15 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
US9449858B2 (en) * | 2010-08-09 | 2016-09-20 | Applied Materials, Inc. | Transparent reflector plate for rapid thermal processing chamber |
JP5606852B2 (ja) * | 2010-09-27 | 2014-10-15 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
JP2012074430A (ja) * | 2010-09-28 | 2012-04-12 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP5559656B2 (ja) * | 2010-10-14 | 2014-07-23 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
WO2012166984A1 (en) | 2011-06-01 | 2012-12-06 | Pfi Acquisition, Inc. | Apparatus for powering an accessory device in a refrigerated container |
KR101995984B1 (ko) * | 2011-08-16 | 2019-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 챔버 내의 기판을 감지하기 위한 방법들 및 장치 |
WO2013052262A1 (en) | 2011-10-05 | 2013-04-11 | Applied Materials, Inc. | Particle control in laser processing systems |
US9018570B2 (en) * | 2011-12-15 | 2015-04-28 | Intermolecular, Inc. | Combinatorial heating of substrates by an inductive process and combinatorial independent heating |
US8536072B2 (en) | 2012-02-07 | 2013-09-17 | United Microelectronics Corp. | Semiconductor process |
JP2014194921A (ja) * | 2013-03-01 | 2014-10-09 | Tokyo Electron Ltd | マイクロ波処理装置及びマイクロ波処理方法 |
US9129918B2 (en) * | 2013-10-30 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for annealing semiconductor structures |
CN105765706B (zh) | 2013-11-12 | 2019-10-25 | 应用材料公司 | 高温计的背景消除 |
US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
US10240236B2 (en) * | 2015-03-06 | 2019-03-26 | Lam Research Corporation | Clean resistant windows for ultraviolet thermal processing |
US20170194162A1 (en) * | 2016-01-05 | 2017-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor manufacturing equipment and method for treating wafer |
KR20170104710A (ko) * | 2016-03-07 | 2017-09-18 | 삼성디스플레이 주식회사 | 성막 장치 및 표시 장치의 제조 방법 |
US11621180B2 (en) * | 2016-10-31 | 2023-04-04 | Nissin Ion Equipment Co., Ltd. | Heating device |
US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
KR102658700B1 (ko) * | 2019-06-13 | 2024-04-19 | 매슨 테크놀로지 인크 | 투과 스위치 플레이트를 갖는 열 처리 시스템 |
CN116601753A (zh) * | 2020-12-14 | 2023-08-15 | 玛特森技术公司 | 具有热处理系统的工件处理装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US102098A (en) * | 1870-04-19 | Improved french bedstead | ||
US3144562A (en) * | 1961-05-12 | 1964-08-11 | Itt | Radiation source search system using an oscillating filter |
JPS5977289A (ja) * | 1982-10-26 | 1984-05-02 | ウシオ電機株式会社 | 光照射炉 |
SE448575B (sv) * | 1983-08-11 | 1987-03-02 | Tri Innovations Ab | Reflektorkonstruktion for ir-ugnar |
US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
JPS60258928A (ja) * | 1984-02-28 | 1985-12-20 | タマラツク・サイエンテイフイツク・カンパニ−・インコ−ポレ−テツド | 半導体ウエ−ハの加熱装置および方法 |
US4938815A (en) * | 1986-10-15 | 1990-07-03 | Advantage Production Technology, Inc. | Semiconductor substrate heater and reactor process and apparatus |
JP3466633B2 (ja) * | 1991-06-12 | 2003-11-17 | ソニー株式会社 | 多結晶半導体層のアニール方法 |
US5226732A (en) * | 1992-04-17 | 1993-07-13 | International Business Machines Corporation | Emissivity independent temperature measurement systems |
GB9219221D0 (en) * | 1992-09-11 | 1992-10-28 | Queen Mary & Westfield College | Furnace |
US5561735A (en) * | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
US5971565A (en) * | 1995-10-20 | 1999-10-26 | Regents Of The University Of California | Lamp system with conditioned water coolant and diffuse reflector of polytetrafluorethylene(PTFE) |
US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
EP0898731A1 (en) * | 1996-12-20 | 1999-03-03 | Koninklijke Philips Electronics N.V. | Furnace for rapid thermal processing |
US5874711A (en) * | 1997-04-17 | 1999-02-23 | Ag Associates | Apparatus and method for determining the temperature of a radiating surface |
US5960158A (en) * | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
US6027244A (en) * | 1997-07-24 | 2000-02-22 | Steag Rtp Systems, Inc. | Apparatus for determining the temperature of a semi-transparent radiating body |
US6056434A (en) * | 1998-03-12 | 2000-05-02 | Steag Rtp Systems, Inc. | Apparatus and method for determining the temperature of objects in thermal processing chambers |
US6127658A (en) * | 1998-08-04 | 2000-10-03 | Steag C.V.D. Systems, Ltd. | Wafer heating apparatus and method with radiation absorptive peripheral barrier blocking stray radiation |
PT1114284E (pt) * | 1998-09-09 | 2004-01-30 | John Harrison | Modulo receptor de energia solar |
US6303411B1 (en) * | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
US6259062B1 (en) * | 1999-12-03 | 2001-07-10 | Asm America, Inc. | Process chamber cooling |
US6376806B2 (en) * | 2000-05-09 | 2002-04-23 | Woo Sik Yoo | Flash anneal |
DE10051125A1 (de) * | 2000-10-16 | 2002-05-02 | Steag Rtp Systems Gmbh | Vorrichtung zum thermischen Behandeln von Substraten |
US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
DE10197002B3 (de) * | 2000-12-04 | 2017-11-23 | Mattson Technology Inc. | Verfahren und System zur Wärmebehandlung |
US6600138B2 (en) * | 2001-04-17 | 2003-07-29 | Mattson Technology, Inc. | Rapid thermal processing system for integrated circuits |
CN101324470B (zh) | 2001-12-26 | 2011-03-30 | 加拿大马特森技术有限公司 | 测量温度和热处理的方法及系统 |
US6839507B2 (en) * | 2002-10-07 | 2005-01-04 | Applied Materials, Inc. | Black reflector plate |
US7041931B2 (en) * | 2002-10-24 | 2006-05-09 | Applied Materials, Inc. | Stepped reflector plate |
-
2003
- 2003-07-28 US US10/629,400 patent/US7115837B2/en not_active Expired - Lifetime
-
2004
- 2004-07-21 DE DE112004001402T patent/DE112004001402B4/de active Active
- 2004-07-21 KR KR1020067001927A patent/KR101124051B1/ko active IP Right Grant
- 2004-07-21 CN CN200480021056XA patent/CN1934404B/zh active Active
- 2004-07-21 JP JP2006521902A patent/JP2007500447A/ja active Pending
- 2004-07-21 WO PCT/US2004/023352 patent/WO2005013325A2/en active Application Filing
- 2004-07-27 TW TW093122407A patent/TWI365499B/zh active
-
2006
- 2006-08-16 US US11/506,174 patent/US7737385B2/en active Active - Reinstated
-
2010
- 2010-05-10 US US12/776,845 patent/US9633876B2/en active Active
Cited By (15)
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US11613073B2 (en) | 2018-01-24 | 2023-03-28 | Hewlett-Packard Development Company, L.P. | Method and apparatus for build material heating |
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US20050023267A1 (en) | 2005-02-03 |
US7115837B2 (en) | 2006-10-03 |
WO2005013325A9 (en) | 2005-11-03 |
TWI365499B (en) | 2012-06-01 |
JP2007500447A (ja) | 2007-01-11 |
CN1934404B (zh) | 2011-12-14 |
WO2005013325A2 (en) | 2005-02-10 |
US7737385B2 (en) | 2010-06-15 |
KR20060052925A (ko) | 2006-05-19 |
DE112004001402T5 (de) | 2006-06-29 |
WO2005013325A3 (en) | 2005-06-16 |
TW200511437A (en) | 2005-03-16 |
US9633876B2 (en) | 2017-04-25 |
US20100219174A1 (en) | 2010-09-02 |
DE112004001402B4 (de) | 2011-07-28 |
KR101124051B1 (ko) | 2012-03-23 |
WO2005013325B1 (en) | 2005-08-04 |
US20070131671A1 (en) | 2007-06-14 |
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