CN1929119A - 均热片组件及其制造方法 - Google Patents

均热片组件及其制造方法 Download PDF

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Publication number
CN1929119A
CN1929119A CNA2006101537264A CN200610153726A CN1929119A CN 1929119 A CN1929119 A CN 1929119A CN A2006101537264 A CNA2006101537264 A CN A2006101537264A CN 200610153726 A CN200610153726 A CN 200610153726A CN 1929119 A CN1929119 A CN 1929119A
Authority
CN
China
Prior art keywords
heat spreader
sintered body
spreader module
sheet material
insulated substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101537264A
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English (en)
Chinese (zh)
Inventor
石川修平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN1929119A publication Critical patent/CN1929119A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
CNA2006101537264A 2005-09-09 2006-09-08 均热片组件及其制造方法 Pending CN1929119A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005261977 2005-09-09
JP2005261977A JP4378334B2 (ja) 2005-09-09 2005-09-09 ヒートスプレッダモジュール及びその製造方法

Publications (1)

Publication Number Publication Date
CN1929119A true CN1929119A (zh) 2007-03-14

Family

ID=37758802

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101537264A Pending CN1929119A (zh) 2005-09-09 2006-09-08 均热片组件及其制造方法

Country Status (5)

Country Link
US (1) US7447032B2 (de)
EP (1) EP1770773A3 (de)
JP (1) JP4378334B2 (de)
KR (1) KR100762195B1 (de)
CN (1) CN1929119A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106717136A (zh) * 2014-09-24 2017-05-24 京瓷株式会社 电子模块
CN107369612A (zh) * 2017-07-14 2017-11-21 南通明芯微电子有限公司 一种芯片的制造方法
CN107546200A (zh) * 2017-07-27 2018-01-05 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN107611104A (zh) * 2017-07-27 2018-01-19 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN109309065A (zh) * 2017-07-27 2019-02-05 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN111356544A (zh) * 2017-11-20 2020-06-30 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
CN111590044A (zh) * 2020-06-16 2020-08-28 辽宁科技大学 一种铜铝结合5g天线散热器的制作方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007125878A1 (ja) * 2006-04-26 2007-11-08 Denki Kagaku Kogyo Kabushiki Kaisha アルミニウム－炭化珪素質複合体及びそれを用いた放熱部品
DE602006013948D1 (de) * 2006-05-04 2010-06-10 Hitachi Ltd Magnetspeichervorrichtung
DE102007051570A1 (de) * 2007-10-29 2009-04-30 Austrian Research Centers Gmbh Verfahren zur Herstellung eines Verbundwerkstoffs sowie Verbundwerkstoff, Verbundwerkstoffkörper und Anschlussvorrichtung
JP2009130060A (ja) * 2007-11-21 2009-06-11 Toyota Industries Corp 放熱装置
JP5070014B2 (ja) * 2007-11-21 2012-11-07 株式会社豊田自動織機 放熱装置
US20110278638A1 (en) * 2008-03-25 2011-11-17 Lin Charles W C Semiconductor chip assembly with post/dielectric/post heat spreader
JP5316602B2 (ja) * 2010-12-16 2013-10-16 株式会社日本自動車部品総合研究所 熱拡散部材の接合構造、発熱体の冷却構造、及び熱拡散部材の接合方法
TWI435393B (zh) * 2011-01-19 2014-04-21 Subtron Technology Co Ltd 封裝載板及其製作方法
TWI433615B (zh) * 2012-04-12 2014-04-01 Subtron Technology Co Ltd 散熱基板及其製作方法
US20130306293A1 (en) * 2012-05-21 2013-11-21 Hamilton Sundstrand Space Systems International Extruded matching set radiators
US20130308273A1 (en) * 2012-05-21 2013-11-21 Hamilton Sundstrand Space Systems International Laser sintered matching set radiators
US20140097002A1 (en) 2012-10-05 2014-04-10 Tyco Electronics Amp Gmbh Electrical components and methods and systems of manufacturing electrical components
US9758858B2 (en) 2012-10-05 2017-09-12 Tyco Electronics Corporation Methods of manufacturing a coated structure on a substrate
CN203013703U (zh) * 2012-12-17 2013-06-19 中怡(苏州)科技有限公司 散热元件及应用该散热元件的通讯装置
JPWO2014170997A1 (ja) * 2013-04-19 2017-02-16 株式会社日立製作所 パワーモジュール及びその製造方法
KR101735633B1 (ko) 2016-12-05 2017-05-15 임정희 엘이디용 조명장치
JP7119671B2 (ja) * 2017-11-20 2022-08-17 三菱マテリアル株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
JP2020188235A (ja) * 2019-05-17 2020-11-19 三菱マテリアル株式会社 複合伝熱部材、及び、複合伝熱部材の製造方法
JP2022048812A (ja) * 2020-09-15 2022-03-28 Ｄｏｗａメタルテック株式会社 放熱部材およびその製造方法
KR20220088819A (ko) 2020-12-20 2022-06-28 박지인 항균 효과를 지닌 점자 스티커

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4583283A (en) 1982-03-26 1986-04-22 Motorola, Inc. Electrically isolated semiconductor power device
US5050040A (en) * 1988-10-21 1991-09-17 Texas Instruments Incorporated Composite material, a heat-dissipating member using the material in a circuit system, the circuit system
EP0480038B1 (de) 1990-04-16 1997-07-09 Denki Kagaku Kogyo Kabushiki Kaisha Keramische leiterplatte
JP2656416B2 (ja) 1991-12-16 1997-09-24 三菱電機株式会社 半導体装置および半導体装置の製造方法、並びに半導体装置に用いられる複合基板および複合基板の製造方法
US5561321A (en) * 1992-07-03 1996-10-01 Noritake Co., Ltd. Ceramic-metal composite structure and process of producing same
US5608267A (en) 1992-09-17 1997-03-04 Olin Corporation Molded plastic semiconductor package including heat spreader
US5834840A (en) 1995-05-25 1998-11-10 Massachusetts Institute Of Technology Net-shape ceramic processing for electronic devices and packages
US5650663A (en) 1995-07-03 1997-07-22 Olin Corporation Electronic package with improved thermal properties
US5844310A (en) 1996-08-09 1998-12-01 Hitachi Metals, Ltd. Heat spreader semiconductor device with heat spreader and method for producing same
JPH10134869A (ja) 1996-10-30 1998-05-22 Yazaki Corp 端子材料および端子
JPH1129379A (ja) 1997-02-14 1999-02-02 Ngk Insulators Ltd 半導体ヒートシンク用複合材料及びその製造方法
US6261703B1 (en) 1997-05-26 2001-07-17 Sumitomo Electric Industries, Ltd. Copper circuit junction substrate and method of producing the same
JP4304749B2 (ja) * 1998-02-24 2009-07-29 住友電気工業株式会社 半導体装置用部材の製造方法
JPH11307682A (ja) 1998-04-23 1999-11-05 Hitachi Ltd 半導体装置
JP2000174166A (ja) 1998-10-02 2000-06-23 Sumitomo Electric Ind Ltd 半導体搭載パッケ―ジ
JP2001007265A (ja) 1999-06-22 2001-01-12 Sentan Zairyo:Kk 冷却装置付基板及びその製法
US6075700A (en) 1999-02-02 2000-06-13 Compaq Computer Corporation Method and system for controlling radio frequency radiation in microelectronic packages using heat dissipation structures
JP4261713B2 (ja) 1999-12-20 2009-04-30 パナソニック株式会社 熱伝導基板とその製造方法
JP2004221605A (ja) 1999-12-24 2004-08-05 Ngk Insulators Ltd ヒートシンク材及びその製造方法
JP2001339022A (ja) 1999-12-24 2001-12-07 Ngk Insulators Ltd ヒートシンク材及びその製造方法
JP2001196512A (ja) 2000-01-11 2001-07-19 Mitsubishi Electric Corp 半導体装置
US6343647B2 (en) 2000-01-11 2002-02-05 Thermax International, Ll.C. Thermal joint and method of use
JP2002043482A (ja) 2000-05-17 2002-02-08 Ngk Insulators Ltd 電子回路用部材及びその製造方法並びに電子部品
US7214566B1 (en) 2000-06-16 2007-05-08 Micron Technology, Inc. Semiconductor device package and method
KR20020006389A (ko) * 2000-07-12 2002-01-19 박호군 다공성 금속을 이용한 반도체 패키징용 히트 싱크 및 그제조방법
JP2002069392A (ja) 2000-08-31 2002-03-08 Polymatech Co Ltd 熱伝導性接着フィルムおよびその製造方法ならびに電子部品
JP2002203942A (ja) 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP4015023B2 (ja) 2001-02-22 2007-11-28 日本碍子株式会社 電子回路用部材及びその製造方法並びに電子部品
US7069645B2 (en) 2001-03-29 2006-07-04 Ngk Insulators, Ltd. Method for producing a circuit board
US6475327B2 (en) 2001-04-05 2002-11-05 Phoenix Precision Technology Corporation Attachment of a stiff heat spreader for fabricating a cavity down plastic chip carrier
WO2003007312A2 (en) 2001-05-24 2003-01-23 Fry's Metals , Inc. Thermal interface material and heat sink configuration
JP2002368168A (ja) 2001-06-13 2002-12-20 Hitachi Ltd 半導体装置用複合部材、それを用いた絶縁型半導体装置、又は非絶縁型半導体装置
JP4812985B2 (ja) 2001-08-23 2011-11-09 電気化学工業株式会社 セラミック体と銅板の接合方法
DE10142614A1 (de) * 2001-08-31 2003-04-03 Siemens Ag Leistungselektronikeinheit
JP2003155575A (ja) 2001-11-16 2003-05-30 Ngk Insulators Ltd 複合材料及びその製造方法
JP3850739B2 (ja) 2002-02-21 2006-11-29 三菱電機株式会社 半導体装置
JP4223730B2 (ja) 2002-04-15 2009-02-12 株式会社エー・エム・テクノロジー ヒートシンク板
JP4113971B2 (ja) * 2002-07-30 2008-07-09 株式会社豊田自動織機 低膨張材料及びその製造方法
JP2004253736A (ja) * 2003-02-21 2004-09-09 Ngk Insulators Ltd ヒートスプレッダモジュール
JP4014528B2 (ja) 2003-03-28 2007-11-28 日本碍子株式会社 ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
DE10324190B4 (de) 2003-05-28 2009-07-23 M.Pore Gmbh Wärmetauscher
US7532481B2 (en) * 2004-04-05 2009-05-12 Mitsubishi Materials Corporation Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material
US7032652B2 (en) * 2004-07-06 2006-04-25 Augux Co., Ltd. Structure of heat conductive plate

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106717136A (zh) * 2014-09-24 2017-05-24 京瓷株式会社 电子模块
CN106717136B (zh) * 2014-09-24 2019-03-01 京瓷株式会社 电子模块
CN107369612A (zh) * 2017-07-14 2017-11-21 南通明芯微电子有限公司 一种芯片的制造方法
CN107546200A (zh) * 2017-07-27 2018-01-05 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN107611104A (zh) * 2017-07-27 2018-01-19 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
WO2019019867A1 (zh) * 2017-07-27 2019-01-31 比亚迪股份有限公司 散热元件及其制备方法和igbt模组
WO2019019857A1 (zh) * 2017-07-27 2019-01-31 比亚迪股份有限公司 散热元件及其制备方法和igbt模组
CN109309065A (zh) * 2017-07-27 2019-02-05 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN109309065B (zh) * 2017-07-27 2023-05-05 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN111356544A (zh) * 2017-11-20 2020-06-30 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
CN111356544B (zh) * 2017-11-20 2022-01-14 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
CN111590044A (zh) * 2020-06-16 2020-08-28 辽宁科技大学 一种铜铝结合5g天线散热器的制作方法

Also Published As

Publication number Publication date
US20070058349A1 (en) 2007-03-15
EP1770773A3 (de) 2008-01-23
EP1770773A2 (de) 2007-04-04
US7447032B2 (en) 2008-11-04
KR100762195B1 (ko) 2007-10-02
KR20070029593A (ko) 2007-03-14
JP4378334B2 (ja) 2009-12-02
JP2007073875A (ja) 2007-03-22

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Open date: 20070314