CN1784784A - 复合材料及电路或电模块 - Google Patents
复合材料及电路或电模块 Download PDFInfo
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- CN1784784A CN1784784A CNA2004800124333A CN200480012433A CN1784784A CN 1784784 A CN1784784 A CN 1784784A CN A2004800124333 A CNA2004800124333 A CN A2004800124333A CN 200480012433 A CN200480012433 A CN 200480012433A CN 1784784 A CN1784784 A CN 1784784A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49877—Carbon, e.g. fullerenes
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C2204/00—End product comprising different layers, coatings or parts of cermet
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0102—Calcium [Ca]
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- H—ELECTRICITY
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- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Laminated Bodies (AREA)
Abstract
Description
λth单位W/mK | α单位10-6/K | |
Ag | 428 | 19.7 |
Cu | 395 | 16.8 |
CuCo0.2 | 385 | 17.7 |
CuSn0.12 | 364 | 17.7 |
Au | 312 | 14.3 |
Al | 239 | 23.8 |
BeO | 218 | 8.5 |
AlN | 140-170 | 2.6 |
Si | 152 | 2.6 |
SiC | 90 | 2.6 |
Ni | 81 | 12.8 |
Sn | 65 | 27 |
AuSn20 | 57 | 15.9 |
Fe | 50 | 13.2 |
Si3N4 | 10-40 | 3.1 |
Al2O3 | 18.8 | 6.5 |
FeNi42 | 15.1 | 5.1 |
银环氧粘合剂 | 0.8-2 | 53 |
环氧树脂模制件 | 0.63-0.76 | 18-30 |
SiO2 | 0.1 | 0.5 |
W | 130 | 4.5 |
Mo | 140 | 5.1 |
Cu/Mo/CU | 194 | 6.0 |
AlSiC | 160-220 | 7-10 |
Claims (34)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10320838.0 | 2003-05-08 | ||
DE2003120838 DE10320838B4 (de) | 2003-05-08 | 2003-05-08 | Faserverstärktes Metall-Keramik/Glas-Verbundmaterial als Substrat für elektrische Anwendungen, Verfahren zum Herstellen eines derartigen Verbundmaterials sowie Verwendung dieses Verbundmaterials |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1784784A true CN1784784A (zh) | 2006-06-07 |
CN100454525C CN100454525C (zh) | 2009-01-21 |
Family
ID=33394381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800124333A Expired - Fee Related CN100454525C (zh) | 2003-05-08 | 2004-04-20 | 复合材料及电路或电模块 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060263584A1 (zh) |
EP (1) | EP1620892A2 (zh) |
JP (1) | JP2007500450A (zh) |
CN (1) | CN100454525C (zh) |
DE (1) | DE10320838B4 (zh) |
WO (1) | WO2004102659A2 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE405948T1 (de) * | 2004-05-18 | 2008-09-15 | Soemtron Ag | Kühlvorrichtung |
JP2006152338A (ja) * | 2004-11-26 | 2006-06-15 | Sumitomo Electric Ind Ltd | ダイヤモンド被覆電極及びその製造方法 |
WO2008063148A2 (en) * | 2005-05-20 | 2008-05-29 | University Of Central Florida | Carbon nanotube reinforced metal composites |
US8231703B1 (en) | 2005-05-25 | 2012-07-31 | Babcock & Wilcox Technical Services Y-12, Llc | Nanostructured composite reinforced material |
US7886813B2 (en) * | 2005-06-29 | 2011-02-15 | Intel Corporation | Thermal interface material with carbon nanotubes and particles |
DE102006037185A1 (de) * | 2005-09-27 | 2007-03-29 | Electrovac Ag | Verfahren zur Behandlung von Nanofasermaterial sowie Zusammensetzung aus Nanofasermaterial |
DE102005046404B4 (de) * | 2005-09-28 | 2008-12-24 | Infineon Technologies Ag | Verfahren zur Minderung von Streuungen in der Durchbiegung von gewalzten Bodenplatten und Leistungshalbleitermodul mit einer nach diesem Verfahren hergestellten Bodenplatte |
TW200726344A (en) * | 2005-12-30 | 2007-07-01 | Epistar Corp | Hybrid composite material substrate |
US7592688B2 (en) * | 2006-01-13 | 2009-09-22 | International Rectifier Corporation | Semiconductor package |
DE102007001743A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und Verfahren zur Herstellung eines solchen |
CN101542723A (zh) | 2006-10-06 | 2009-09-23 | 美高森美公司 | 高温、高压SiC无空隙电子封装 |
DE102007031490B4 (de) * | 2007-07-06 | 2017-11-16 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls |
AT505491B1 (de) * | 2007-07-10 | 2010-06-15 | Electrovac Ag | Verbundwerkstoff |
DE102007051613A1 (de) * | 2007-10-24 | 2009-04-30 | Siemens Ag | Schalt- und Schutzeinrichtung, Schmelzsicherung, Schaltanlage/Verteilersystem, Stromschienenverteiler und Anschlusseinrichtung |
DE102008044641A1 (de) * | 2008-04-28 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE202009008337U1 (de) * | 2009-06-12 | 2009-08-27 | Picolas Gmbh | Vorrichtung zur Absteuerung eines Laserdiodenarrays |
JP2012253125A (ja) * | 2011-06-01 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体装置及び配線基板 |
DE102012102611B4 (de) * | 2012-02-15 | 2017-07-27 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP2014047127A (ja) * | 2012-09-04 | 2014-03-17 | Toyo Tanso Kk | 金属−炭素複合材、金属−炭素複合材の製造方法及び摺動部材 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3766634A (en) * | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
US3744120A (en) * | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
JPS5253720A (en) * | 1975-10-29 | 1977-04-30 | Hitachi Ltd | Non-orientated cu-carbon fiber compoite and its manufacturing method |
JPS6141538A (ja) * | 1984-08-06 | 1986-02-27 | 株式会社日立製作所 | セラミツク基板及びその製造方法 |
US5165909A (en) * | 1984-12-06 | 1992-11-24 | Hyperion Catalysis Int'l., Inc. | Carbon fibrils and method for producing same |
JPH01148542A (ja) * | 1987-12-04 | 1989-06-09 | Ok Trading Kk | 繊維強化メタライズドセラミツクス |
ZA899615B (en) * | 1988-12-16 | 1990-09-26 | Hyperion Catalysis Int | Fibrils |
NL9001662A (nl) * | 1990-07-20 | 1992-02-17 | Velterop F M Bv | Werkwijze voor het verbinden van een keramisch materiaal met een ander materiaal. |
JPH06196585A (ja) * | 1992-12-24 | 1994-07-15 | Toshiba Corp | 回路基板 |
JP2914076B2 (ja) * | 1993-03-18 | 1999-06-28 | 株式会社日立製作所 | セラミックス粒子分散金属部材とその製法及びその用途 |
US5424054A (en) * | 1993-05-21 | 1995-06-13 | International Business Machines Corporation | Carbon fibers and method for their production |
US5495979A (en) * | 1994-06-01 | 1996-03-05 | Surmet Corporation | Metal-bonded, carbon fiber-reinforced composites |
US5660923A (en) * | 1994-10-31 | 1997-08-26 | Board Of Trustees Operating Michigan State University | Method for the preparation of metal matrix fiber composites |
US5814408A (en) * | 1996-01-31 | 1998-09-29 | Applied Sciences, Inc. | Aluminum matrix composite and method for making same |
US5981085A (en) * | 1996-03-21 | 1999-11-09 | The Furukawa Electric Co., Inc. | Composite substrate for heat-generating semiconductor device and semiconductor apparatus using the same |
JPH1053405A (ja) * | 1996-08-06 | 1998-02-24 | Otsuka Chem Co Ltd | 微結晶からなる六方晶窒化ホウ素多結晶体及びその製造法 |
US5707715A (en) * | 1996-08-29 | 1998-01-13 | L. Pierre deRochemont | Metal ceramic composites with improved interfacial properties and methods to make such composites |
JP3607934B2 (ja) * | 1996-09-19 | 2005-01-05 | 国立大学法人 東京大学 | カーボンナノチューブ強化アルミニウム複合材料 |
US6245442B1 (en) * | 1997-05-28 | 2001-06-12 | Kabushiki Kaisha Toyota Chuo | Metal matrix composite casting and manufacturing method thereof |
JP2001010874A (ja) * | 1999-03-27 | 2001-01-16 | Nippon Hybrid Technologies Kk | 無機材料とアルミニウムを含む金属との複合材料の製造方法とその関連する製品 |
JP2001107203A (ja) * | 1999-09-30 | 2001-04-17 | Yazaki Corp | 複合材料及びその製造方法 |
JP3953276B2 (ja) * | 2000-02-04 | 2007-08-08 | 株式会社アルバック | グラファイトナノファイバー、電子放出源及びその作製方法、該電子放出源を有する表示素子、並びにリチウムイオン二次電池 |
JP2002080280A (ja) * | 2000-06-23 | 2002-03-19 | Sumitomo Electric Ind Ltd | 高熱伝導性複合材料及びその製造方法 |
JP3893860B2 (ja) * | 2000-08-11 | 2007-03-14 | 株式会社豊田自動織機 | 電子部品のケース及びその製造方法 |
US6420293B1 (en) * | 2000-08-25 | 2002-07-16 | Rensselaer Polytechnic Institute | Ceramic matrix nanocomposites containing carbon nanotubes for enhanced mechanical behavior |
US6469381B1 (en) * | 2000-09-29 | 2002-10-22 | Intel Corporation | Carbon-carbon and/or metal-carbon fiber composite heat spreader |
US6407922B1 (en) * | 2000-09-29 | 2002-06-18 | Intel Corporation | Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader |
US6460497B1 (en) * | 2000-10-16 | 2002-10-08 | Donald Eugene Hodgson | Hodgson piston type engine |
EP1363325B1 (en) * | 2001-02-22 | 2013-02-20 | NGK Insulators, Ltd. | Member for electronic circuit, method for manufacturing the member |
JP4714371B2 (ja) * | 2001-06-06 | 2011-06-29 | ポリマテック株式会社 | 熱伝導性成形体及びその製造方法 |
JP3632682B2 (ja) * | 2001-07-18 | 2005-03-23 | ソニー株式会社 | 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法 |
-
2003
- 2003-05-08 DE DE2003120838 patent/DE10320838B4/de not_active Expired - Fee Related
-
2004
- 2004-04-20 EP EP04728319A patent/EP1620892A2/de not_active Withdrawn
- 2004-04-20 CN CNB2004800124333A patent/CN100454525C/zh not_active Expired - Fee Related
- 2004-04-20 JP JP2006529582A patent/JP2007500450A/ja active Pending
- 2004-04-20 WO PCT/DE2004/000824 patent/WO2004102659A2/de active Application Filing
- 2004-04-20 US US10/554,496 patent/US20060263584A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN100454525C (zh) | 2009-01-21 |
WO2004102659A2 (de) | 2004-11-25 |
DE10320838B4 (de) | 2014-11-06 |
US20060263584A1 (en) | 2006-11-23 |
JP2007500450A (ja) | 2007-01-11 |
WO2004102659A3 (de) | 2005-06-09 |
EP1620892A2 (de) | 2006-02-01 |
DE10320838A1 (de) | 2004-12-02 |
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