EP1620892A2 - Verbundwerkstoff sowie elektrischer schaltkreis oder elektrisches modul - Google Patents
Verbundwerkstoff sowie elektrischer schaltkreis oder elektrisches modulInfo
- Publication number
- EP1620892A2 EP1620892A2 EP04728319A EP04728319A EP1620892A2 EP 1620892 A2 EP1620892 A2 EP 1620892A2 EP 04728319 A EP04728319 A EP 04728319A EP 04728319 A EP04728319 A EP 04728319A EP 1620892 A2 EP1620892 A2 EP 1620892A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- composite material
- metal
- nanofibers
- material according
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49877—Carbon, e.g. fullerenes
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/14—Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C2204/00—End product comprising different layers, coatings or parts of cermet
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
Definitions
- the invention relates to a composite material or a composite material according to the preamble of claim 1 and to an electrical circuit or an electrical module according to the preamble of claim 32.
- a “composite material” or a “composite material” in the sense of the invention is generally a material which has a plurality of material components, for example in a common matrix or else at least partially in at least two adjacent and interconnected material sections.
- a “component for heat dissipation” or a “heat sink” in the sense of the invention are generally components which are used in particular in electronics and in particular also in power electronics and are used here to dissipate heat loss or to cool electrical or electronic components, such as B. floor and / or heat dissipation plates in electrical circuits or modules, supports for electrical or electronic components, housings or housing elements of electrical components or modules, but also for example from a cooling medium such. B. water flow through cooler, heat pipe or elements of such active heat sinks.
- composite materials are used as material for constructions, components, etc., especially when material properties are required that cannot be achieved with a single material component.
- the properties desired for the composite material can be optimally set.
- "Materials for Thermal Conduction” Chung et al., Appl. Therm. Eng., 21, (2001) 1 593-1605, gives a general overview of materials for heat conduction or heat dissipation materials. The article outlines the properties of possible individual components and relevant examples of composite materials.
- metal-ceramic substrates as printed circuit boards, for example those made of aluminum oxide (Al 2 0 3 ) or increasingly also those made of aluminum nitride (AIN) because of the improved electrical properties.
- Al 2 0 3 aluminum oxide
- AIN aluminum nitride
- layers or base plates made of copper have been used as a carrier or transition layer to a heat sink, through which a possibly not insignificant power loss of such a power module has to be dissipated, which have a high thermal conductivity and therefore to dissipate the power loss and heat as well are well suited for heat spreading.
- Expansion coefficients of the materials used namely the ceramic, the copper and also the silicon of the active electrical or electronic components of such a module.
- Power modules or their components are subject to a not inconsiderable temperature change not only during manufacture, but especially during operation, for example during the transition from the operating phase to the idle phase and vice versa, but also during operation when the module is switched. Due to the different expansion coefficients, these temperature changes lead to mechanical stresses in the module, i.e. to mechanical stresses between the ceramic and the adjacent metallizations or metal layers (such as a base plate on one side of the ceramic layer and conductor tracks, contact areas, etc. on the other side of the ceramic layer) and also between Metal surfaces and the electrical or electronic components arranged thereon, in particular Semiconductor devices. Frequent mechanical voltage changes lead to material fatigue and thus to a failure of the module or the components there.
- This DCB method then has e.g. following process steps:
- the object of the invention is to provide a composite material which, while maintaining a high thermal conductivity which is greater than or at least equal to that of copper or copper alloys, has a coefficient of thermal expansion which is significantly reduced compared to copper.
- a composite material is formed according to claim 1.
- An electrical circuit or an electrical module are designed according to claim 32.
- the composite material according to the invention which i.a. also for applications in electrical engineering and for applications as a substrate or as a component
- Heat dissipation in electrical power modules is essentially composed of three main components, namely at least one metal or at least one metal alloy, at least one ceramic and nanofibers, which have a thickness in the range of approximately 1.3 nm to 300 nm, the length / thickness ratio being greater than 10 for the majority of the nanofibers contained in the composite.
- the portion of ceramic can be replaced in whole or in part by glass, for example by silicon oxide.
- the nanofibers used bring about the desired reduction in the coefficient of thermal expansion of the composite material in at least two mutually perpendicular spatial axes, preferably in all three mutually perpendicular spatial axes.
- the orientation of the nanofibers is isotropically distributed at least in the at least two spatial axes.
- the nanofibers are, for example, at least partially nanotubes, which are distinguished by a particularly high strength in the axial direction and thereby contribute particularly effectively to the desired reduction in the coefficient of thermal expansion.
- the nanofibers preferably consist of an electrically conductive material, so that the composite material comprising the nanofibers or its part comprising these nanofibers can also be used for electrical interconnects or contacts, etc. H. has the necessary electrical conductivity for this application.
- the nanofibers are preferably those made of carbon and / or boron nitride and / or tungsten carbide.
- Other suitable for the production of nanofibers Materials or material connections are fundamentally conceivable, in particular also carbon nanofibers coated with boron nitride and / or tungsten carbide.
- An aluminum oxide or an aluminum nitride ceramic is preferably used as the ceramic in the composite material according to the invention, the aluminum nitride ceramic being distinguished by a particularly high electrical dielectric strength and by an increased thermal conductivity.
- Copper or a is preferably suitable as the metal component in the invention
- Copper alloy This applies in particular also in the event that the composite material is to be used for substrates or printed circuit boards or as a component for heat dissipation for electrical circuits or modules. Copper, but also copper alloys, are relatively easy to machine, especially when this material component of the composite material contains the nanofibers.
- nanofibers in the at least one metal or the at least one metal alloy and / or in the ceramic and / or in the glass, for example in a matrix formed by the metal or the metal alloy.
- the proportion of nanofibers in the composite material is, for example, in the range between 10 and 70% by volume, preferably in the range between 40 and 70% by volume, based on the total volume of the material component of the composite material containing these fibers.
- nanofibers are contained in the metal or in the metal alloy of the composite material, a wide variety of options are available for realizing this special design Procedures available. So it is z. B. possible to first form a preform or preform from the nanofibers, for example in the form of a three-dimensional latticework, a fleece-like structure, a hollow or tube-like structure etc. from the nanofibers, in which preform then the at least one metal or the at least one metal alloy is introduced.
- preform A wide variety of techniques are conceivable especially for this purpose, for example by chemical and / or electrolytic deposition, by melt infiltration, etc.
- the composite material is a fiber-reinforced ceramic-glass composite material as a substrate for electrical or electronic applications and consists of a carrier substrate based on ceramic and / or glass materials and of at least one fiber-reinforced metal layer applied on one side.
- the fibers in the metal layer are then, for example, carbon nanotubes which have a thickness of 1.3 to 300 nm and a length / thickness ratio> 10, the nanofibers being present in the metal matrix of the metal layer in a proportion of 10 to 70 percent by volume , If the carrier substrate also contains nanofibers, these consist of high nitride and / or tungsten carbide.
- the metal and the nanofibers to a preform or a carrier made of metal and / or ceramic, for example by chemical and / or electrolytic deposition.
- the capsule and the metal blank produced containing the nanofibers are separated so that it can then be further processed, for example by machining or by cutting, sawing and / or rolling to produce plates or foils, which then is connected to a ceramic layer, for example for the production of a metal-ceramic substrate or a printed circuit board.
- the composite material according to the invention is designed as a laminate, with at least two interconnected material sections or layers, in which case a material section or a layer consists of the at least one metal or the at least one metal alloy and the another section of material or the other layer of ceramic.
- the nanofibers are then contained, for example, in the at least one material section made of the metal or the metal alloy.
- the nanofibers are also contained in the ceramic, for example to increase the mechanical strength of the ceramic and / or to improve the thermal conductivity of the ceramic.
- both material sections or layers are e.g. B. by soldering, preferably also connected by active soldering or using the direct bonding technique known per se.
- the composite material is designed as a metal-ceramic substrate or printed circuit board, there is one on at least one surface side
- Ceramic layer provided a metallization, which is formed by the at least one metal or the at least one metal alloy and which contains the nanofibers. This metal layer is then connected, for example, to the base plate of such a substrate or to a base plate with which the substrate is also connected to a passive heat sink, for example in the form of a heat sink, or to an active heat sink, for example in the form of a cooler through which a cooling medium flows Micro cooler is connected.
- a passive heat sink for example in the form of a heat sink
- an active heat sink for example in the form of a cooler through which a cooling medium flows Micro cooler is connected.
- the metal or the metal alloy which form these conductor tracks, contact areas etc., can also contain the nanofibers, the structuring of the metallization into the conductor tracks etc. being carried out, for example, in the customary manner, namely in that after a metal layer has been applied, it is deposited in the structured metallization is brought, for example also by a masking and etching process.
- the invention thus creates a composite material in which the incorporation of the nanofibers into the metal matrix, for example copper matrix, achieves a significantly higher conductivity (eg> 380 W (mK) "1 ) combined with a reduced thermal expansion Furthermore, easy processing of the metal containing the nanofibers is ensured, in particular when using copper for the metal matrix, so that all usual Processing techniques such as drilling, milling, punching, but also chemical processing are possible.
- nanofibers are provided in the metal matrix, they serve as reinforcement components which, with their high thermal conductivity (greater than 1 000 W (mK) "1 ) and with their negligible thermal expansion coefficient, reduce the expansion coefficient of the entire composite material and significantly improve its thermal conductivity.
- FIG. 1 shows a simplified representation of an electrical power module with a
- Composite material according to the invention shows a simplified schematic illustration of the various method steps (positions a - d) of the HIP method for producing a metal-nanofiber composite material;
- 3 shows a schematic representation of a method for further processing a starting material containing the at least one metal or the at least one metal alloy and the nanofibers.
- 4 and 5 in a schematic representation in side view and in plan view of a bath for electrolytic and / or chemical co-deposition of
- FIG. 1 shows a simplified representation and a side view of an electrical power module 1, which, among other things, consists of a ceramic-copper substrate 2 with various electronic semiconductor components 3, of which only one power component is shown for the sake of simplicity, and a base plate 4 consists.
- the copper-ceramic substrate 2 comprises a ceramic layer 5, for example made of aluminum oxide or aluminum nitride ceramic, wherein different ceramics can also be used in the case of a multi-part formation of the layer 5, as well as an upper metallization 6 and a lower metallization 7.
- the metallizations 6 and 7 in the illustrated embodiments are each formed from a film which contains nanofibers in a matrix of copper or a copper alloy, for example in a proportion of 10-70% by volume, based on the total volume of the respective film or metallization, preferably in a proportion from 40 - 70% by volume.
- the component 3 is a power semiconductor component, for. B. a transistor for switching high currents z. B. to control an electric motor or a drive other power semiconductor components are conceivable, such as laser diodes, etc.
- the thickness of the base plate 4 in the axial direction perpendicular to the planes of the metallizations 6 and 7 is many times greater than the thickness of the foils used for these metallizations 6 and 7.
- the two metallizations 6 and 7 are each areally connected to a surface side of the ceramic layer 5 using a suitable technique, for example the DCB technique or by means of the active soldering method.
- the metallization 6 is further structured in the required manner to form conductor tracks, contact areas, fastening areas for fastening or for soldering on components 3, shielding areas or tracks, tracks acting as inductors, etc., preferably with the aid of the masking known to the person skilled in the art - or etching technology.
- Other techniques are also conceivable, for example in the form that the structuring is produced by mechanical processing of the film forming the metallization 6, for example after or before the application of the metallization 6 to the ceramic layer 5.
- the film forming the metallization 7 is not structured in the illustrated embodiment.
- this film covers a large part of the underside of the ceramic layer 5, although, among other things, to increase the dielectric strength, the edge region of the ceramic layer 5 is kept free of the metallization 7, ie the edge of the metallization 7 ends at a distance from the edge of the ceramic layer 5 ,
- the base plate 4 is also designed such that its circumference projects significantly beyond the circumference of the copper-ceramic substrate 2.
- the base plate 4 is, for example, the base plate of a housing of the power module 1 that is otherwise not shown in detail.
- the metallization 7 is connected to the base plate 4 with its surface side facing away from the ceramic layer 5, specifically using a suitable technique, such as, for. B.
- the base plate 4 in the illustrated embodiment also consists of a metal or a metal alloy, for example of copper or a copper alloy, the metal or the metal alloy of the base plate 4 in turn containing the nanofibers in a proportion of 10-70% by volume based on the total Volume of the base plate 4, preferably in the proportion of 40-70 volume%.
- Base plate 4 are distributed at least in the two mutually perpendicular spatial axes, which define the planes of the metallizations 6 and 7 and the plane of the upper side of the base plate 4 connected to the metallization 7, with respect to their orientation or approximately isotropically.
- the nanofibers have a thickness in the range between 1.3 nm to 300 nm, the larger proportion of the nanofibers contained in the metal matrix in each case having a length / thickness ratio> 10.
- the nanofibers are carbon-based or made of carbon, for example in the form of nanotubes. Basically, there is also
- the orientation of the nanofibers can also be in all three perpendicular spatial axes, i. H. in the two, the levels of metallizations 6 and 7 and the top of the
- Base plate 4 defining spatial axes as well as isotropically distributed in the spatial axis running perpendicular thereto.
- a substantial reduction in the thermal coefficient of thermal expansion of the metallization 6 and 7 and in particular also the base plate 4 is achieved specifically in the spatial axes in which the preferred orientation of the nanofibers is present, namely in the spatial axes determining the levels of the metallizations and the levels of the top of the base plate, specifically to a value ⁇ 5x10 "6 K " 1 , especially also in the temperature range between room temperature (about 20 ° C.) and 250 ° C. which is of interest for substrates of semiconductor power modules ,
- the electrical conductivity, in particular also of the conductor tracks formed by the metallization 6, corresponds to the electrical conductivity of copper or a copper alloy without the nanofibers.
- Base plate 4 reached.
- a passive heat sink for example connected to a cooling element or radiator, which is arranged in a flow of a medium dissipating the heat loss, in the simplest case an air flow, or the base plate 4 is connected to an active heat sink, i. H. for example with a micro cooler through which a cooling medium flows, for example a gaseous and / or vaporous and / or liquid cooling medium, for example water.
- a cooling medium for example a gaseous and / or vaporous and / or liquid cooling medium, for example water.
- the base plate 4 directly as a cooler and in particular as an active cooler, for B. micro cooler, which is flowed through by the cooling medium, or run as a heat pipe. In these cases, too, it makes sense to use at least part of the
- Cooler or the heat pipe which (part) is connected to the metallization 7, from which the nanofibers contain metal or the corresponding metal alloy.
- FIG. 2 shows in various process steps (positions a - d) one possibility of producing a starting material consisting of the metal matrix and the nanofibers contained in this matrix.
- this method which is also referred to as the HIP method, a powdery mixture 8 of particles made of the metal or the metal alloy, for example of copper or of the copper alloy and introduced from the nanofibers into a capsule 9 in such a way that this capsule 8 is filled with the mixture 8 about up to 60% of its capacity.
- Mixing aids can also be added to the mixture 8, in particular in order to enable the highest possible proportion of nanofibers and to achieve a uniform distribution of these fibers and, among other things, to reduce the adhesion between the nanofibers. Furthermore, it can be expedient to improve the connection between the metal, for example copper and the carbon of the nanofibers, those with herringbone-like
- Coatings of the nanofibers with reactive elements, which bring about a chemical bond, and / or a coating of the nanofibers with the metal and / or with ceramic and / or with boron nitride and / or with tungsten carbide, for example by vapor deposition, etc., can also be expedient.
- a lid 10 is then placed on the upper opening of the capsule 9 and this is tightly connected to the capsule, for example welded.
- the interior of the capsule 9 is evacuated via a connection 11 provided on the cover 10 and the interior of the capsule 8 is then sealed gas-tight.
- the deformable, closed capsule 9 is subjected to high pressure at all times at a process temperature in the range of approximately 500 to 1000 ° C.
- This all-round pressurization of the capsule 9 takes place in a closed chamber 12 a hydrostatic pressure acting on the capsule 9, as indicated in position d by the arrows there.
- This actual HIP process results in a volume reduction, which is reflected in a deformation of the capsule 9.
- the volume shrinkage that occurs during this deformation is about 5-10%, but can also be larger, for example up to 20%.
- the capsule 9 and the associated lid 10 and the connection between these two elements are designed so that the capsule is not damaged.
- the capsule 9 has, for example, a simple geometry and is thin-walled.
- the capsule 9 and the starting material produced in the HIP process are then separated from one another, so that this can then be processed further in a suitable manner.
- the capsule 9 and its cover 10 fulfill several in the HIP process
- FIG. 3 shows in various positions ad a possibility of further processing of the end product 13 obtained with the HIP process.
- This is shown as a block in FIG. 3 (position a).
- the product 13 is then formed into a film 15 (position b), which is then subsequently wound up for further use (position c).
- position d it is again indicated that the film 15 or corresponding cuts of this film with the help of, for example, the DCB technique or with the help of another suitable method on the ceramic layer 5 to form the Metallizations 6 and 7 can be applied, the metallization 6 being structured in further process steps not shown in FIG. 3.
- FIGS. 4 and 5 show a further possibility for the production of the starting material which contains the nanofibers in the metal matrix.
- metal or copper foils are arranged in a suitable bath containing the nanofibers and also the metal, for example copper, from which copper and nanofibers are then deposited electrolytically and / or chemically on the foil blanks.
- the starting material obtained with this method is then used, for example, directly as a layer containing the metal or the metal alloy together with the nanofibers in a laminate-like configuration of the composite material according to the invention, for example for the metallizations 6 and 7 or the base plate 4 of the power module 1 in FIG. 1 , or that obtained with this method, for example Plate-like starting material is subjected to further processing, for example a rolling process, before it is used as a material component in the composite material.
- the method of FIGS. 4 and 5 there is also the possibility of arranging one or more preforms in the bath 17 which is formed by a three-dimensional structure, for example a network or a fleece-like structure made of nanofibers, so that the deposition then takes place of copper and other nanofibers from the bath 17 on the respective preform to form a material containing the nanofibers and the metal or copper.
- the nanofibers of the preform are also pretreated chemically with reactive elements in this embodiment, for example, for better bonding with the metal, which the mechanical connection between the Nanofiber and the metal, for example copper improve.
- a coating of the nanofibers with the metal for example by vapor deposition, is also conceivable with this method.
- the ceramic layer 5 itself can also be used as the pre-form, on which the metal (copper) and the nanofibers are then electrolytically and / or chemically deposited from the bath 17.
- the ceramic layer 5 is previously pretreated, at least on its surface sides on which this co-deposition of nanofibers and metal is to take place, for example made electrically conductive, for example by applying a thin metal or copper layer.
- FIGS. 6 and 7 show a further possible embodiment of a method in which copper is electrolytically and / or chemically deposited on preforms 18 which are formed from interlocking fibers from a bath 19 which contains copper or copper salts.
- the product obtained can then be used as a starting material for further processing.
- nanofibers or nanofibers coated with copper protrude from the material obtained so that a dirt-repellent lotus effect results and / or wetting effects of the material can be controlled.
- the power module 1 of FIG. 1 for example, it is also possible to use only the base plate 4 and / or only one of the metallizations 6 or 7 from which the Manufacture material containing nanofibers. Furthermore, it is also possible to provide nanofibers in the ceramic layer 5 in order, for. B. to increase the thermal conductivity of this ceramic layer.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE2003120838 DE10320838B4 (de) | 2003-05-08 | 2003-05-08 | Faserverstärktes Metall-Keramik/Glas-Verbundmaterial als Substrat für elektrische Anwendungen, Verfahren zum Herstellen eines derartigen Verbundmaterials sowie Verwendung dieses Verbundmaterials |
PCT/DE2004/000824 WO2004102659A2 (de) | 2003-05-08 | 2004-04-20 | Verbundwerkstoff sowie elektrischer schaltkreis oder elektrisches modul |
Publications (1)
Publication Number | Publication Date |
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EP1620892A2 true EP1620892A2 (de) | 2006-02-01 |
Family
ID=33394381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP04728319A Withdrawn EP1620892A2 (de) | 2003-05-08 | 2004-04-20 | Verbundwerkstoff sowie elektrischer schaltkreis oder elektrisches modul |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060263584A1 (de) |
EP (1) | EP1620892A2 (de) |
JP (1) | JP2007500450A (de) |
CN (1) | CN100454525C (de) |
DE (1) | DE10320838B4 (de) |
WO (1) | WO2004102659A2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE405948T1 (de) * | 2004-05-18 | 2008-09-15 | Soemtron Ag | Kühlvorrichtung |
JP2006152338A (ja) * | 2004-11-26 | 2006-06-15 | Sumitomo Electric Ind Ltd | ダイヤモンド被覆電極及びその製造方法 |
WO2008063148A2 (en) * | 2005-05-20 | 2008-05-29 | University Of Central Florida | Carbon nanotube reinforced metal composites |
US8231703B1 (en) | 2005-05-25 | 2012-07-31 | Babcock & Wilcox Technical Services Y-12, Llc | Nanostructured composite reinforced material |
US7886813B2 (en) * | 2005-06-29 | 2011-02-15 | Intel Corporation | Thermal interface material with carbon nanotubes and particles |
DE102006037185A1 (de) * | 2005-09-27 | 2007-03-29 | Electrovac Ag | Verfahren zur Behandlung von Nanofasermaterial sowie Zusammensetzung aus Nanofasermaterial |
DE102005046404B4 (de) * | 2005-09-28 | 2008-12-24 | Infineon Technologies Ag | Verfahren zur Minderung von Streuungen in der Durchbiegung von gewalzten Bodenplatten und Leistungshalbleitermodul mit einer nach diesem Verfahren hergestellten Bodenplatte |
TW200726344A (en) * | 2005-12-30 | 2007-07-01 | Epistar Corp | Hybrid composite material substrate |
US7592688B2 (en) * | 2006-01-13 | 2009-09-22 | International Rectifier Corporation | Semiconductor package |
DE102007001743A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und Verfahren zur Herstellung eines solchen |
AU2007307054B2 (en) | 2006-10-06 | 2011-01-27 | Microsemi Corporation | High temperature, high voltage SiC void-less electronic package |
DE102007031490B4 (de) * | 2007-07-06 | 2017-11-16 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleitermoduls |
AT505491B1 (de) * | 2007-07-10 | 2010-06-15 | Electrovac Ag | Verbundwerkstoff |
DE102007051613A1 (de) * | 2007-10-24 | 2009-04-30 | Siemens Ag | Schalt- und Schutzeinrichtung, Schmelzsicherung, Schaltanlage/Verteilersystem, Stromschienenverteiler und Anschlusseinrichtung |
DE102008044641A1 (de) * | 2008-04-28 | 2009-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
DE202009008337U1 (de) * | 2009-06-12 | 2009-08-27 | Picolas Gmbh | Vorrichtung zur Absteuerung eines Laserdiodenarrays |
JP2012253125A (ja) * | 2011-06-01 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体装置及び配線基板 |
DE102012102611B4 (de) * | 2012-02-15 | 2017-07-27 | Rogers Germany Gmbh | Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates |
JP2014047127A (ja) * | 2012-09-04 | 2014-03-17 | Toyo Tanso Kk | 金属−炭素複合材、金属−炭素複合材の製造方法及び摺動部材 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3766634A (en) * | 1972-04-20 | 1973-10-23 | Gen Electric | Method of direct bonding metals to non-metallic substrates |
US3744120A (en) * | 1972-04-20 | 1973-07-10 | Gen Electric | Direct bonding of metals with a metal-gas eutectic |
JPS5253720A (en) * | 1975-10-29 | 1977-04-30 | Hitachi Ltd | Non-orientated cu-carbon fiber compoite and its manufacturing method |
JPS6141538A (ja) * | 1984-08-06 | 1986-02-27 | 株式会社日立製作所 | セラミツク基板及びその製造方法 |
US5165909A (en) * | 1984-12-06 | 1992-11-24 | Hyperion Catalysis Int'l., Inc. | Carbon fibrils and method for producing same |
JPH01148542A (ja) * | 1987-12-04 | 1989-06-09 | Ok Trading Kk | 繊維強化メタライズドセラミツクス |
IL92717A (en) * | 1988-12-16 | 1994-02-27 | Hyperion Catalysis Int | Fibrils |
NL9001662A (nl) * | 1990-07-20 | 1992-02-17 | Velterop F M Bv | Werkwijze voor het verbinden van een keramisch materiaal met een ander materiaal. |
JPH06196585A (ja) * | 1992-12-24 | 1994-07-15 | Toshiba Corp | 回路基板 |
JP2914076B2 (ja) * | 1993-03-18 | 1999-06-28 | 株式会社日立製作所 | セラミックス粒子分散金属部材とその製法及びその用途 |
US5424054A (en) * | 1993-05-21 | 1995-06-13 | International Business Machines Corporation | Carbon fibers and method for their production |
US5495979A (en) * | 1994-06-01 | 1996-03-05 | Surmet Corporation | Metal-bonded, carbon fiber-reinforced composites |
US5660923A (en) * | 1994-10-31 | 1997-08-26 | Board Of Trustees Operating Michigan State University | Method for the preparation of metal matrix fiber composites |
US5814408A (en) * | 1996-01-31 | 1998-09-29 | Applied Sciences, Inc. | Aluminum matrix composite and method for making same |
US5981085A (en) * | 1996-03-21 | 1999-11-09 | The Furukawa Electric Co., Inc. | Composite substrate for heat-generating semiconductor device and semiconductor apparatus using the same |
JPH1053405A (ja) * | 1996-08-06 | 1998-02-24 | Otsuka Chem Co Ltd | 微結晶からなる六方晶窒化ホウ素多結晶体及びその製造法 |
US5707715A (en) * | 1996-08-29 | 1998-01-13 | L. Pierre deRochemont | Metal ceramic composites with improved interfacial properties and methods to make such composites |
JP3607934B2 (ja) * | 1996-09-19 | 2005-01-05 | 国立大学法人 東京大学 | カーボンナノチューブ強化アルミニウム複合材料 |
US6245442B1 (en) * | 1997-05-28 | 2001-06-12 | Kabushiki Kaisha Toyota Chuo | Metal matrix composite casting and manufacturing method thereof |
JP2001010874A (ja) * | 1999-03-27 | 2001-01-16 | Nippon Hybrid Technologies Kk | 無機材料とアルミニウムを含む金属との複合材料の製造方法とその関連する製品 |
JP2001107203A (ja) * | 1999-09-30 | 2001-04-17 | Yazaki Corp | 複合材料及びその製造方法 |
JP3953276B2 (ja) * | 2000-02-04 | 2007-08-08 | 株式会社アルバック | グラファイトナノファイバー、電子放出源及びその作製方法、該電子放出源を有する表示素子、並びにリチウムイオン二次電池 |
JP2002080280A (ja) * | 2000-06-23 | 2002-03-19 | Sumitomo Electric Ind Ltd | 高熱伝導性複合材料及びその製造方法 |
JP3893860B2 (ja) * | 2000-08-11 | 2007-03-14 | 株式会社豊田自動織機 | 電子部品のケース及びその製造方法 |
US6420293B1 (en) * | 2000-08-25 | 2002-07-16 | Rensselaer Polytechnic Institute | Ceramic matrix nanocomposites containing carbon nanotubes for enhanced mechanical behavior |
US6407922B1 (en) * | 2000-09-29 | 2002-06-18 | Intel Corporation | Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader |
US6469381B1 (en) * | 2000-09-29 | 2002-10-22 | Intel Corporation | Carbon-carbon and/or metal-carbon fiber composite heat spreader |
US6460497B1 (en) * | 2000-10-16 | 2002-10-08 | Donald Eugene Hodgson | Hodgson piston type engine |
KR100565139B1 (ko) * | 2001-02-22 | 2006-03-30 | 니뽄 가이시 가부시키가이샤 | 전자 회로용 부재 및 그 제조 방법과 전자 부품 |
JP4714371B2 (ja) * | 2001-06-06 | 2011-06-29 | ポリマテック株式会社 | 熱伝導性成形体及びその製造方法 |
JP3632682B2 (ja) * | 2001-07-18 | 2005-03-23 | ソニー株式会社 | 電子放出体の製造方法、冷陰極電界電子放出素子の製造方法、並びに、冷陰極電界電子放出表示装置の製造方法 |
-
2003
- 2003-05-08 DE DE2003120838 patent/DE10320838B4/de not_active Expired - Fee Related
-
2004
- 2004-04-20 EP EP04728319A patent/EP1620892A2/de not_active Withdrawn
- 2004-04-20 JP JP2006529582A patent/JP2007500450A/ja active Pending
- 2004-04-20 CN CNB2004800124333A patent/CN100454525C/zh not_active Expired - Fee Related
- 2004-04-20 WO PCT/DE2004/000824 patent/WO2004102659A2/de active Application Filing
- 2004-04-20 US US10/554,496 patent/US20060263584A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
---|
See references of WO2004102659A2 * |
Also Published As
Publication number | Publication date |
---|---|
JP2007500450A (ja) | 2007-01-11 |
CN100454525C (zh) | 2009-01-21 |
CN1784784A (zh) | 2006-06-07 |
US20060263584A1 (en) | 2006-11-23 |
DE10320838B4 (de) | 2014-11-06 |
DE10320838A1 (de) | 2004-12-02 |
WO2004102659A2 (de) | 2004-11-25 |
WO2004102659A3 (de) | 2005-06-09 |
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