CN1855462A - 电子部件搭载用基板和电子部件 - Google Patents

电子部件搭载用基板和电子部件 Download PDF

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CN1855462A
CN1855462A CNA200610064801XA CN200610064801A CN1855462A CN 1855462 A CN1855462 A CN 1855462A CN A200610064801X A CNA200610064801X A CN A200610064801XA CN 200610064801 A CN200610064801 A CN 200610064801A CN 1855462 A CN1855462 A CN 1855462A
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film
solder
electronic unit
substrate
metal layer
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CN100470779C (zh
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秦昌平
松岛直树
藤永猛
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Hitachi Kyowa Engineering Co Ltd
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Hitachi Kyowa Engineering Co Ltd
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Abstract

本发明涉及提供防止在基板或电子部件的接合部上形成的焊料膜表面的氧化，并在无助焊剂下可以接合的基板或电子部件。在基板(1)上形成金属化层(2)，其上形成Sn焊料膜(3)和Ag膜(4)。Ag膜(4)是在大气中室温下不发生氧化的金属。即使在湿式加工中，由于Ag和Sn的电池反应，使得仅在露出的Sn焊料膜(3)的侧面发生氧化，所以不影响接合，焊料膜上的Ag膜(4)上不发生氧化。在Sn焊料膜(3)熔融的同时，Ag膜(4)溶解到Sn焊料中，所以Ag膜(4)不妨碍接合。

Description

电子部件搭载用基板和电子部件
技术领域
本发明涉及在金属化层上形成焊料膜的电子部件搭载用基板、以及在接合点或者引线表面形成焊料膜的电子部件。
背景技术
相当多的制品在基板和电子部件的电极、电子部件的引线上形成有焊料。具体而言，在以下的电子部件的安装中广泛使用：(1)在基板上形成金属化层作为电极，在该金属化层上形成焊料膜，使用该焊料膜来进行与电子部件的接合；(2)在电子部件的电极上形成金属化层，在该金属化层上形成焊料膜，使用该焊料膜来进行与其他电子部件的接合；(3)在含有引线的电子部件的引线表面形成焊料膜，在与印刷线路板等接合时，该焊料膜也熔融而接合等。
作为形成电极的金属化层和焊料膜的例子有，(1)在印刷线路板上的铜箔上采用镀膜法形成焊料层；(2)在陶瓷基板上形成金属化层，在该金属化层上使用溅射或者蒸镀等方法形成薄膜的焊料膜。还有，作为形成电极的金属化层和焊料膜的电子部件的例子，可以举出例如在半导体晶片上形成电路元件，其接合部的电极金属化层上形成焊料凸点的结构。还有，在包含引线的电子部件的引线表面形成焊料层的例子，可以举出例如在电子部件的引线表面单独镀Sn或者形成Sn合金的镀层的电子部件。
这些基板或者电子部件上的焊料膜的作用如下所述。
在基板上预先形成焊料膜的情况下，电子部品搭载在基板上，使得电子部件的接合部在焊料膜上接触，通过将其进行回流，基板上的焊料膜熔融，这些焊料浸润于电子部件接合部的金属化层等，从而接合电子部件和基板。
对于在陶瓷、硅等基板上形成金属化层后，并在该金属化层上采用薄膜形成技术形成焊料膜的衬底(submount)部件而言，是把光元件等电子部件压在焊料膜上，在不加助焊剂的状态下加热，使薄膜焊料熔融，在电子部件的金属化层上浸润焊料，进行接合。
对于在电子部件的电极金属化层上形成焊料凸点的部件而言，根据芯片切割进行分割后，对于在各芯片上形成焊料凸点时，多数情况为将焊料球熔融，在电子部件的金属化层上浸润焊料而形成焊料凸点。这种情况下，在印刷线路板、陶瓷基板等上搭载电子部件，对此进行回流时，焊料凸点熔融，在基板的金属化层上浸润焊料而进行接合。还有，近年来，也有在Si晶片上形成电路元件，在根据芯片切割进行分割的前工序，通过镀敷等方法在晶片状态下形成焊料膜的情况。
对于含有引线的电子部件而言，通过在基板上印刷焊料膏，在该焊料膏上搭载电子部件的引线，使整体回流而熔融焊料，来接合基板和电子部件的引线。
电子部件的引线框，多为单独的镀银膜或者单独的镀Sn膜等，单独的镀银膜，由于表面不氧化而浸润性优良，单独的Sn膜，虽然其表面氧化，但氧化膜的某一部分会破裂，而导致基板侧的焊料和Sn镀膜熔融成为一体，来进行接合。
在特开平5-190973号公报中，公开了电子部件搭载用基板的一个例子，半导体激光器用衬底。该衬底，采用Ti/Pt/Au作为金属化层，在半导体激光器搭载部上设置Pt层和AuSn焊料层。半导体激光器的背面上也形成金属化层，衬底的Au-Sn焊料发生熔融，与金属化层接合，使得半导体激光器牢固地固定。
在此领域中可以使用Au-Sn焊料的理由是，Au-Sn焊料是硬焊料，难以产生蠕变变形。这是因为，半导体激光器在发光时会发热，因此如果温度上升而使焊料蠕变变形，则半导体激光的位置偏移，而无法得到光学性结合。
近年来，作为光记录用的光源，多使用由GaAs半导体制成的半导体激光器等。这样的半导体激光器中，如果使用Au-Sn焊料，由于受到根据焊料接合的残留应力的影响，有时会出现可靠性下降的情况。残留应力是由在焊料的熔点半导体激光器和衬底固定，冷却到室温附近时，半导体激光器和衬底的热膨胀率有差异而引起的。在焊料软的情况下，焊料发生变形而缓和残留应力，但在焊料硬的时候，残留应力的缓和效果就小。
从而，在使用Au-Sn焊料，进行元件全长较长的半导体激光器等接合时，在半导体激光器上会产生比较大的残留应力，降低该半导体激光器的寿命。
鉴于上述情况，开始研究在半导体激光器的安装中使用以Sn为主要成分的软焊料。
发明内容
但是，这种在基板或电子部件的金属化层、或者在电子部件的引线表面形成的以Sn为主要成分的焊料膜上，大多会在表面上形成氧化膜。这是因为，通常焊料的主要成分是Sn，Sn在大气中被氧化。
从确实地进行接合的角度老看，比较方便的是使用可将焊料膜表面存在的氧化膜还原，以大幅提高接合性的助焊剂。但近年来不允许使用助焊剂的情况在增多。
例如，光元件的安装中，首先，如果助焊剂残渣存在于光元件的发光部，会遮挡光路，而导致不良效果。还有，助焊剂自身或者在清洗助焊剂残渣时使用的有机溶剂也可能损坏光元件。
在印刷线路板或者陶瓷基板上形成焊料膜的情况，在电子部件侧形成焊料凸点的情况、在电子部件的引线表面形成焊料膜的情况，至今使用助焊剂来降低焊料膜表面氧化膜的不良影响。但是，近年来接合部的细微化、窄距化得到不断的发展，因此在接合时助焊剂成分的蒸发、助焊剂的流动等因素会使细微的接合部发生位置偏移，而存在发生短络的可能性。还有，这些助焊剂自身的材料费、涂布工序、之后的清洗工序都是导致成本上升的原因，因此优选采用无助焊剂的简便接合方法。
对于电子部件的引线框，也能够预测今后接合部将不断地细微化，将越来越接近对基板的焊料膏印刷的细微化的限度。即，如果不是在基板侧实施焊料膏印刷，而是使用电子部件侧的焊料镀敷等进行接合，则可以大幅度降低引线间的搭桥的不良情况。还有，使用助焊剂时，由于加热时产生助焊剂的气泡，所以尽管很少，但也有可能使电子部件的位置移动。以往由于焊料的量多，因此根据熔融焊料表面张力的自我校准，不会发生由助焊剂的气泡引起的电子部件的位置偏移，但是今后随着微细化的发展，焊料量减小，就不能忽视这种气泡的影响。还有，由于使用助焊剂，在材料费、助焊剂涂布工序及清洗工序方面都成为成本增加的原因，因此优选尽可能采用无助焊剂的接合工序。
还有，在镀Sn的引线框上，生长着被称为晶须的针状结晶，常常带来引线间的短路。引线间距的细微化，意味着即使更短的晶须也会引起短路，这样就要求更加严格的控制。
本发明要解决的课题是提供防止在基板或者电子部件的接合部上形成的焊料膜表面的氧化，可以在无助焊剂下进行接合的电子部件。
上述目的可以通过由基材、在基材上形成的金属化层、及在金属化层表面的一部分上形成的Sn焊料部构成，并且在Sn焊料部表面的电子部件搭载部上形成Ag膜的电子部件搭载用基板来实现。
还有，上述目的可以通过含有基材、在基材上形成的金属化层、及在金属化层表面的一部分形成的Sn焊料部，并且在Sn焊料部表面形成有Ag膜的电子部件来实现。
而且，上述目的可以通过如下的电子部件来实现，该电子部件由引线框、搭载到引线框上的功能元件、接合功能元件的端子部和引线框的接合部的多个接合线、对功能元件和多个接合线和引线框的一部分进行注模的树脂部构成，从树脂部外延的引线上实施镀锡，在实施了镀锡的引线的接合部上形成Ag膜。
根据本发明，可以提供在电子部件的接合部的焊料上形成防止焊料表面氧化的防氧化膜，能够在无助焊剂下接合的电子部件。
附图说明
图1是基板的接合部的断面图。
图2是实施例2的基板的接合部的断面图。
图3是实施例3的基板的接合部的断面图。
图4是电子部件的接合部的部分断面图。
图5是电子部件的断面图。
图中，1是陶瓷基板，2是金属化层，3是Sn焊料膜，4是Ag膜，5是聚酰亚胺箔，6是Cu电极金属化层，7是焊料凸点，8是银镀膜，9是Si晶片，10是基板，11是金属化层，12是焊料凸点，13是银镀膜，14是半导体芯片，15是引线框，16是焊料镀膜，17是银镀膜，18是接合线，19是树脂，20是基板，30是基板，40是电子部件，50是电子部件，60是Au膜，70是电路元件。
具体实施方式
使用实施例，参照附图，对本发明的实施方式进行如下说明。
实施例1
使用图1对作为本发明的第一实施方式的基板进行说明。这里，图1是基板接合部的断面图。
图1的基板10的构成是，在陶瓷基板1上，成为一体地EB(电子束)蒸镀由Ti/Pt/Au(Ti→Pt→Au的顺序)构成的金属化层2后，通过离子蚀刻形成图案，然后用抗蚀剂形成图案，在其上成为一体地电阻蒸镀Sn(锡)焊料膜3和Ag(银)表面防氧化膜4，进行升离(lift-off)。金属化层2的Ti(钛)层起到与陶瓷基板1紧密接合的作用、Pt(铂)层起到焊料阻挡层的作用，Au(金)层起到确保引线接合性的作用。金属化层2的厚度，从陶瓷基板1侧开始，分别为0.1μm/0.2μm/0.2μm。还有，Sn焊料膜3的厚度为3μm，Ag膜4的厚度为0.1μm。
通过加热整个基板接合电子部件等时，Sn焊料膜3起到粘接剂的作用。但是，由于Sn焊料膜3具有在大气中被氧化的性质，因此用Ag膜4防止Sn焊料膜3氧化。Ag膜4和Sn焊料膜3的形成部为电子部件搭载部，在金属化层2在表面露出的部分上实施引线接合。
对通过Ag来防止Sn氧化的效果，进行如下详述。Ag的氧化反应，由式(1)表示。
  (1)
该反应式在什么温度、氧分压下向右进行，可以通过该反应的吉布斯自由能计算出来。
吉布斯自由能ΔG，可以使用焓ΔH、熵ΔS和绝对温度T表示如下。
ΔG＝ΔH-TΔS  (2)
根据Kubachewski著的《材料热化学(第6版)》(MaterialsThermochemistry Sixth Edition)(p258)，标准状态25℃的ΔH°＝31.1kJ/mol，ΔS°＝120.9J/K/mol。因此，在标准状态25℃的Ag2O的标准生成自由能为，
ΔG°＝31.1-298×0.1209kJ/mol
     ＝-4.9282kJ/mol
由此，可以计算出Ag2O的生成/分解的氧分压的边界值，即离解压力。
ΔG＝ΔG°+RT1nK  (3)
K＝a(Ag2O)/(a2(Ag)×PO2)  (4)
(3)式中R为气体常数，K为平衡常数，a是各自的活度，PO2是氧分压。对于Ag2O的离解压力，(3)式左边的ΔG＝0，(4)式的a(Ag2O)＝1，a2(Ag)＝1，所以，
ΔG°＝RT lnPO2  (5)
接着，使用前面求出的ΔG°、气体常数R＝8.314kJ/K/mol、温度298K(25℃)，计算出PO2，则(5)式变形为：
PO2＝ext(ΔG°/R/T)  (6)
   ＝0.998大气压(atm)
   ＝1011hPa
在大气压(1atm)中氧浓度为21％，所以氧分压为213hPa(0.21atm)，比Ag2O的离解压力小。从而，在25℃的大气中，Ag不发生氧化。因此，根据图1的构成，由于在Sn焊料膜3上形成了Ag膜4，而Ag在常温的大气中不氧化，因此可以起到防止Sn焊料膜的氧化的效果。
根据本实施例，即使在电子部件10的湿式加工中也可以几乎在整个范围内防止形成氧化膜。对此进行如下说明。
图1的构造中，Sn和比其更为贵金属的Ag接触，形成在侧面露出Sn的构造。由湿式加工中的水引起腐蚀时，即通过所谓的电池反应，在侧面暴露的贱金属Sn发生单方的离子化。换言之，以Ag和Sn作为电极并且以水分作为电解液的电池中，只要还有更为贱金属的Sn极残存，Ag极就不会受到腐蚀。即，仅是侧面的一部分被腐蚀(氧化)，几乎占整个接合面的Ag膜4的表面不发生氧化。这样，在熔融Sn焊料膜3接合电子部件时，阻碍接合的氧化膜仅存在于侧面的一部分，几乎不产生负面影响。综上所述，考虑到通常的来自氧气的氧化和来自水的氧化这两方面，并且考虑到焊料的接合性，如图1所示的在Sn焊料膜3上面覆盖Ag膜4，并且侧面的Sn焊料膜3露出的结构是合适的。如果在Sn焊料膜的侧面也覆盖Ag膜，则预测在湿式加工中由于电池反应而引起的Ag的防蚀效果会减弱，但与Sn相比，Ag更不易被腐蚀，因此与Sn膜的上面露出的状况相比，能实现防止氧化的效果。
如果在Sn焊料上形成Ag膜，在Sn/Ag界面，可能形成Ag3Sn化合物。但是，在Ag表面会长时间维持Ag膜。这是因为Ag在Sn中的扩散慢。从而，可以长时间维持图1的结构，因此可以长时间维持防止氧化的效果。
对于作为焊料的熔融特性和接合性，在厚度为3μm的Sn焊料膜上形成厚度0.1μm的Ag膜，进行确认。其结果，在Sn焊料膜熔融的同时，Ag膜溶解到Sn焊料中，可以确认Ag膜对焊料的浸润性、接合性没有坏的影响。
从接合性的角度来规定Sn焊料膜和Ag膜的厚度比。即，Sn和Ag的合金中Ag的浓度为73wt％，正好整体上是Ag3Sn。如果Ag小于这一浓度，在大于等于Sn-Ag共晶温度221℃时，一定会残留液相成分，因此能够接合。从而，适合将Sn焊料膜3和Ag膜4的厚度决定成为，熔融时的Ag浓度小于等于73wt％。
例如银餐具会发黑，因此一般认为比金更易于氧化。如上所述Ag不会受到由氧气引起的表面氧化，因此这被认为是由大气中的水分引起的氧化。但是，基板或电子部件通常是在无尘室中制造，并在湿度保持得极低的干燥器中保管。这样，可以忽略大气中水分的影响。
综上所述，根据本实施例，可以提供具有能够在接合面的大部分防止由氧气引起的表面氧化和由水分引起的氧化，并且接合性优良的焊料膜(这里包括Ag叫做焊料膜)的基板。本实施例的构成中，使用Ag防止氧化，由于Ag是在大气中不氧化的最廉价的金属，所以在成本方面也有利。
还有，上述实施例中是使用陶瓷作为基板，但也可以使用玻璃基板、玻璃环氧基板、半导体基板等。金属化层使用了Ti/Pt/Au，但并不限于此，也可以是例如Cr/Cu/Au、Ti/Ni/Au等。还有，焊料使用了Sn焊料，但并不限于此，也可以是Sn-Ag焊料、Sn-Ag-Cu焊料、Sn-Zn焊料、Sn-Pb焊料等以Sn为主要成分(最多的成分)的合金。Sn焊料和以Sn为主要成分的合金焊料都称为Sn焊料。Ag也不限于纯银，包括以Ag为主要成分的合金。成膜方法也不限于蒸镀法，可以使用溅射法等薄膜形成技术。此外，上述的变形例也适用于本说明书的其他实施例。
实施例2
参照图2，对于作为本发明所涉及的第一实方式的基板的其他实施例进行说明。图2是基板接合部的断面图。
图2所示的基板20是在实施例1中说明的基板10的Ag膜4上，形成Au膜60的构造。与实施例1不同之处是，在能够升离地形成了图案的保护层上，连续电阻蒸镀形成Sn焊料膜3、Ag膜4和Au膜60。
Au是不氧化的金属，因此多用于金属化层的表面涂膜、引线接合等。在焊料中也可以作为防氧化膜使用。但是，尤其在以Sn为主体的焊料膜上直接形成Au膜时，由于Au和Sn间的相互扩散非常迅速，所以Au扩散到Sn中，而会出现Au的防氧化效果仅在短时间内有效的情况。但是，如图2的结构中，Ag膜4起到Au和Sn相互扩散的阻挡层的功能，可以防止Au向Sn中扩散。从而，使焊料表面不被氧化，可以获得优良的浸润性。
还有，在Ag膜上设置Au层也可以适用于本说明书的以下实施例。这时，可以通过薄膜形成技术形成Ag层之后，接着进行Au层的形成。也可以是通过镀敷法形成Ag层之后，接着由镀层法形成Au层。
实施例3
对于作为本发明所涉及的第一实施方式的基板的另一实施例，参照图3进行说明。这里，图3是基板接合部的断面图。
图3的基板30的结构为，粘接具有可挠性的聚酰亚胺箔5和铜箔，对铜箔进行图案加工而形成Cu电极金属化层6，通过电镀法在其上面形成Sn焊料凸点7，进一步在其上形成Ag镀膜8。焊料凸点7的组成也可以是实施例1的变形例中说明的合金焊料。还有，为了简化图示，图3中省略了纸面上侧的夹持铜箔的聚酰亚胺箔。
Ag镀膜8，如果形成的厚度较厚，则会覆盖焊料凸点7的全部表面，但如果通过调节到适当的厚度而形成得较为薄一些，则会产生微小的未镀敷区域。由于在该部分焊料凸点7的表面稍微露出，所以在湿式加工中通过电池反应可以达到Ag镀膜8的防蚀效果。还有，同样地，由于Ag镀层在25℃的大气中不氧化，因此即使在室温下长期保管，在镀银部分也不形成氧化膜，不会对接合性产生坏的影响。
通过使用这种形态的可挠性基板30，可以将位置调节成为，与基板30接合的电子部件(图中未显示)的接合部与各焊料凸点7上的Ag镀膜8相接触，并通过进行回流，可以在无助焊剂条件下接合基板30和电子部件。无助焊剂接合的优点在于，可以降低助焊剂自身的成本、由于削减了接合后的清洗工序而降低了成本、降低由助焊剂引起的部件损伤等。
实施例4
对于本发明所涉及的第二实施方式的电子部件，参照图4进行说明。图4是电子部件的接合部的部分断面图。
图4的电子部件40的结构是，在Si晶片9上形成电路元件70后，在Si晶片状态下在金属化层11上镀保护层(图中未显示)，之后，通过镀敷形成焊料凸点12，剥离保护镀层后，由掩模溅射法形成Ag膜13。
与实施例1相同，焊料凸点12可以通过实施Sn、Sn-Ag、Sn-Ag-Cu、Sn-Zn、Sn-Pb等金属/合金镀敷来形成。进而，通过形成Ag膜13，可以防止由大气中的氧和水分引起的Ag膜13表面的氧化。
还有，本实施例中在剥离保护镀层后，由掩模溅射法形成了Ag膜13，但在形成焊料凸点12之后，也可以接着实施Ag镀敷。这时Ag镀层的形状与Ag膜13的形状会有一些不同。
近年来，一直在研究电子部件安装的圆晶级化，因此对于圆晶状态电子部件的焊料凸点形成技术变得很重要。形成焊料凸点的圆晶，随后在芯片切割工序中被分割，因此焊料凸点必然与芯片切割用冷却水接触。从而，由水分引起的焊料表面的腐蚀成为重要的课题，使用本发明的构成就可以防止焊料凸点表面的腐蚀。
实施例5
对于作为本发明所涉及的第二实施方式的电子部件的其他实施例，参照图5进行说明。这里，图5是电子部件的断面图。
图5所示的电子部件50是，在引线框15上安装半导体芯片14，通过接合线18将引线框15和半导体芯片14进行接合，由树脂19整个注模这种构成的电子部件。在引线接合部上形成焊料镀膜16和Ag镀膜17。本实施例中，焊料镀膜16可以通过使用Sn、Sn-Ag、Sn-Ag-Cu、Sn-Zn、Sn-Pb等金属/合金。至于Ag镀膜17对焊料镀膜16的防氧化效果，与上述的实施例相同。
此外，图5中，焊料镀膜16的几乎全部区域都被Ag镀膜17所覆盖，但关系到接合性，仅在小尺寸封装(SOP)的引线的水平部分(与基板的接合部)实施镀银就足以。还有，电子部件中内置的功能元件并不限定于半导体芯片，也可以是电阻元件、电容元件。
本实施例可以提供能够以镀敷在电子部件上的微小量焊料，使焊料表面不被氧化，不使用助焊剂而在基板上安装的电子部件。
还有，根据本实施例，焊料镀膜16的几乎全部区域被Ag镀膜17所覆盖，因此具有防止产生Sn晶须的效果。

Claims (11)

1.一种电子部件搭载用基板，其为由基材、在该基材上形成的金属化层、在该金属化层表面的一部分形成的Sn焊料部构成的电子部件搭载用基板，其特征在于：所述Sn焊料部表面的电子部件搭载部上形成有Ag膜。
2.根据权利要求1所述的电子部件搭载用基板，其特征在于：所述Sn焊料部是以Sn为主要成分的合金焊料。
3.根据权利要求1所述的电子部件搭载用基板，其特征在于：所述Ag膜是以Ag为主要成分的合金。
4.根据权利要求1所述的电子部件搭载用基板，其特征在于：所述Ag膜构成为在所述Sn焊料部和所述Ag膜的平均组成中的Ag比例小于等于73wt％。
5.根据权利要求1所述的电子部件搭载用基板，其特征在于：在所述Ag膜之上形成有Au膜。
6.一种电子部件，其为包含基材、在该基材上形成的金属化层、在该金属化层表面的一部分上形成的Sn焊料部的电子部件，其特征在于：所述Sn焊料部表面形成有Ag膜。
7.一种电子部件，其为由引线框、被搭载在该引线框上的功能元件、接合该功能元件的端子部和所述引线框的接合部的多个接合线、对所述功能元件和所述多个接合线和所述引线框的一部分进行注模的树脂部所构成的电子部件，其特征在于：从所述树脂部外延的引线上实施有锡镀层，在实施了锡镀层的所述引线的接合部上形成有Ag膜。
8.根据权利要求6或7所述的电子部件，其特征在于：所述Sn焊料部是以Sn为主要成分的合金焊料。
9.根据权利要求6或7所述的电子部件，其特征在于：所述Ag膜是以Ag为主要成分的合金。
10.根据权利要求6或7所述的电子部件，其特征在于：所述Ag膜构成为在所述Sn焊料部和所述Ag膜的平均组成中的Ag比例小于等于73wt％。
11.根据权利要求6或7所述的电子部件，其特征在于：在所述Ag膜之上形成有Au膜。
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JP4073183B2 (ja) * 2001-08-01 2008-04-09 株式会社日立製作所 Ｐｂフリーはんだを用いた混載実装方法及び実装品
JP2003223945A (ja) * 2002-01-30 2003-08-08 Tanaka Kikinzoku Kogyo Kk Ａｕ−Ｇｅ系ろう材付リードピン
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