WO2012051960A1 - 一种基于铟凸点的无助焊剂回流工艺方法 - Google Patents

一种基于铟凸点的无助焊剂回流工艺方法 Download PDF

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Publication number
WO2012051960A1
WO2012051960A1 PCT/CN2011/081091 CN2011081091W WO2012051960A1 WO 2012051960 A1 WO2012051960 A1 WO 2012051960A1 CN 2011081091 W CN2011081091 W CN 2011081091W WO 2012051960 A1 WO2012051960 A1 WO 2012051960A1
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Prior art keywords
layer
indium
bump
silver
bumps
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PCT/CN2011/081091
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English (en)
French (fr)
Inventor
黄秋平
罗乐
徐高尉
袁媛
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中国科学院上海微系统与信息技术研究所
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Priority to US13/880,451 priority Critical patent/US8900986B2/en
Publication of WO2012051960A1 publication Critical patent/WO2012051960A1/zh

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Definitions

  • the invention relates to a fluxless reflow process based on an indium bump array, which is mainly used for a micro-electromechanical (MEMS) system, a photo-electric chip and a bio-chip, etc., which are required to be flux-free.
  • MEMS micro-electromechanical
  • the flip chip soldering process it belongs to the field of microelectronic packaging. Background technique
  • Solder is a must in microelectronic package. It mainly implements signal transmission and mechanical support inside and between devices. Commonly used metal solders, such as tin-based solders, are easily formed into a metal oxide layer on the surface thereof. When the device is packaged and soldered, the oxide layer hinders the smooth progress of the soldering process without removing the oxide layer. In the case of soldering, it is often difficult to obtain high quality interconnect effects. In order to obtain a good interconnection effect, it is usually necessary to use a flux to remove the solder oxide layer during soldering to obtain a high quality solder.
  • the bump array reflow process of bump arrays provides an idea for bumpless reflow using bump arrays [Jeong-Won Yoon, Hyun-Suk Chun, Seung-Boo Jung, Reliability evaluation of Au-20Sn flip chip Gold bump fabricated by sequential electroplating method with Sn and Au. Materials Science and Engineering A 473 (2008) 119-125.].
  • the present invention seeks to realize a bump reflow process based on indium fluxless solder. It is known that indium is a low-temperature solder having excellent properties, and is also a characteristic not commonly used for tin-based solders, and is widely used in packages for optoelectronic chips and the like.
  • the present invention proposes to maintain the characteristics of the indium solder based on two platings and selecting an appropriate method. Based on this method, it is possible to achieve no flux reflow, and it is also possible to keep the reflow temperature in a lower temperature range. This process has not been reported yet. Summary of the invention
  • An object of the present invention is to provide a process for flux-free reflow based on indium bumps, and the commonly used metal materials for preventing oxidation are gold and silver.
  • the commonly used metal materials for preventing oxidation are gold and silver.
  • it is unrealistic to introduce a gold layer on the surface layer of indium to prevent the oxidation of indium to achieve its reflow into a ball at a lower temperature. This is because from the gold-indium equilibrium phase diagram, the introduction of a small amount of gold in indium causes its melting point to rise sharply, which is undesirable because it loses indium as an excellent low temperature.
  • the advantage of solder is to provide a process for flux-free reflow based on indium bumps, and the commonly used metal materials for preventing oxidation are gold and silver.
  • the present invention a process is devised to achieve the cladding of silver indium bump arrays, and the design of the process is a key point of the present invention. Therefore, the present invention describes a specific process by taking a manufacturing process on a silicon substrate as an example.
  • sputtering a seed layer on the substrate such as sputtering Ti/Cu/Ti, sputtering the Ti layer on the copper surface in order to enhance the adhesion between the passivation layer and the metal layer and avoid oxidation of the copper layer;
  • a seed layer on the substrate such as sputtering Ti/Cu/Ti, sputtering the Ti layer on the copper surface in order to enhance the adhesion between the passivation layer and the metal layer and avoid oxidation of the copper layer;
  • the adhesion between the passivation layers is very poor, and the adhesion between Ti and SiO 2 is strong;
  • Passivation layer opening (a) depositing SiO 2 as a passivation layer by PECVD (plasma-enhanced chemical vapor deposition);
  • Electroplating indium bumps, direct plating of indium bumps and air should be avoided after electroplating and electroplating, and contact with air can be achieved by placing the plated silicon wafer in deionized water or alcohol;
  • the surface of the indium bump is silver plated; the thickness of the plating is controlled by the plating current and the plating time.
  • the final result is a complete coating of the indium bump surface layer with a silver layer; but at the same time, the silver plating layer is required to be thin, thereby making In -Ag solder melting point is not too high; silver indium atomic ratio is close to Ag-In eutectic point;
  • the present invention proposes a process for achieving successful reflow of bumps without the aid of flux.
  • the indium solder with excellent performance and low melting point is used as the main component; a relatively simple two-step electroplating process is adopted, that is, the indium bump is first plated, and then a silver plating layer for preventing oxidation is plated on the surface layer;
  • the peak temperature of reflow since indium-silver maintains a lower melting point in a larger atomic ratio range, after the silver is coated with indium, the bump can still be realized at a lower temperature. Reflow into a ball, the peak reflow temperature in the example is 200 ° C, which is suitable for some applications requiring low temperature soldering.
  • the fluxless reflow of indium bump arrays can be achieved by the process provided by the present invention, which can be applied to flip-chip interconnections in some special optoelectronic chips, MEMS chips and bio-detection chips.
  • the process steps of bump preparation are performed by sequential sequential plating, which is a key point of the present invention.
  • 3 SiO 2 was fabricated by PECVD as a bump passivation layer, which was opened by BOE wet etching;
  • the chip to be reflowed is placed in an annealing furnace controlled by a temperature process, and the reflow device provides a protective atmosphere such as nitrogen or hydrogen.
  • FIG. 1 is a flow chart of a flux-free reflow process provided by the present invention. detailed description
  • Step 1 The substrate is metallized, and a layer of oxide 101 for insulation is thermally oxidized on the silicon substrate to a thickness of 5000 ⁇ , and a composite of Ti/Cu/Ti (200 A /2000 A /200 A) is sputtered thereon.
  • Metal film as a seed layer for electroplating and UBM (under bump metallization), step 2 passivation layer, PECVD (plasma-enhanced chemical vapor deposition) deposition Layer 5000A of Si0 2 103 as a passivation layer;
  • Step 3 coating and photolithography of 1.7 ⁇ m of S1912 104 to prepare the passivation layer opening, S1912 is a mature, commonly used thin photoresist, which is easy to obtain uniform and thickness 1-3 ⁇ Coating effect;
  • Step 4 Passivation layer opening, SiO2DTi is etched by wet etching to expose the sputtered copper layer 105, blunt The opening diameter of the layer is about 40 ⁇ m ⁇ ;
  • step 5 the metallization layer is thickened, and the copper layer is thickened by a copper plating solution.
  • the thickness of the electroplated copper layer is about 3-4 ⁇ ; after the copper layer is thickened, the thin glue S1912 is removed by acetone; Place it before the bump 8 reflow.
  • Step 6 electroplating indium bumps, electroplating indium at a current density of 5-20 mA/cm 2 , controlling the amount of indium plating by controlling the plating time, and finally plating indium bumps 107; silicon wafers which are plated with indium bumps Placed in deionized water to avoid oxidation of the indium bump surface layer;
  • Step 7 coating the indium bumps of the silver layer 108 by electroplating on the indium bump surface layer, and the thickness of the silver layer is controlled within a certain range to avoid the silver indium atom ratio deviating too far from the eutectic point. Its melting point is higher than the melting point of indium; therefore, it should be chosen close to the eutectic point;
  • step 8 the plated silicon wafer is placed in a reflow furnace in a nitrogen atmosphere for reflux, and the resulting alloy composition is controlled, wherein the peak temperature at reflux is 200 ° C, and the temperature is refluxed for 5 min at the temperature, and finally, the reflux is obtained. 109 bumps; perform post-cutting processing.

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Description

一种基于铟凸点的无助焊剂回流工艺方法 技术领域
本发明涉及到一种基于铟凸点阵列的无助焊剂回流工艺方法， 主要用于 需进行免助焊剂的微机电 （MEMS ) 系统， 光电芯片 （Photoelectric chip ) 与 生物芯片 (Bio-chip)等倒装焊接工艺中， 属于微电子封装领域。 背景技术
焊料在微电子封装中是必定要用到的， 它主要实现器件内部及器件间信 号传输与机械支撑等。 常用的金属焊料， 如锡基焊料， 由于其表面极易形成 一层金属氧化层， 在用它对器件进行封装焊接时， 该氧化层会阻碍焊接过程 的顺利进行， 在不去除该氧化层的情况下焊接， 往往很难获得高质量的互连 效果。 为得到好的互连效果， 通常需在焊接时使用助焊剂而去除焊料表层氧 化层从而得到高质量的焊接。但是在某些特殊的应用中，如某些光电芯片（带 光学镜头） ， 微机电系统和生物检测芯片的焊接中， 焊接过程中如果引入助 焊剂将会不可避免地给器件带来污染， 这些污染对器件性能的影响通常是致 命的， 因此在此类应用中， 助焊剂一般是禁用的。 为达到上述要求， 开发一 些可实现免助焊剂情况下可实现良好焊接的工艺技术是必须的。 实现该技术 的可用方案有两种： 采取特殊的助焊剂 （如用氢气等还原性强的气体或用等 离子对焊料表面进行清洗） ， 采取特殊方法防止焊料表面发生氧化。
对无助焊剂的倒装焊工艺而言， 第一歩是如何实现焊料凸点在无助焊剂情 况下成功实现回流。 迄今为止， Chin C. Lee领导的课题组对基于锡基焊料的 免助焊剂焊接工艺做出了一些研究， 实现了两片状芯片间无助焊剂的键合 [Chin C. Lee, Ricky W. Chuang, Fluxless Non-Eutectic Joints Fabricated Using Gold-Tin Multilayer Composite, IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, VOL. 26, NO. 2, JUNE 2003.]； Jeong-Won Yoon等利用顺次序电镀工艺实现了锡基凸点阵列的凸点阵列回流 工艺， 为利用凸点阵列实现无助焊剂回流提供了一种思路 [Jeong-Won Yoon, Hyun-Suk Chun, Seung-Boo Jung, Reliability evaluation of Au-20Sn flip chip solder bump fabricated by sequential electroplating method with Sn and Au. Materials Science and Engineering A 473 (2008) 119-125.]。 本发明试图实现基 于铟无助焊剂凸点回流工艺， 我们知道， 铟是一种性能极佳的低温焊料， 也 是锡基等常用焊料所没有的特性， 被广泛用于光电芯片等的封装中。 本发明 提出一种基于两次电镀， 并选择适当的方式保持了铟焊料的特性。 基于此方 法既可实现其无助焊剂回流， 而且还可以使回流温度保持在较低的温度范围 内。 此工艺尚未见报道。 发明内容
本发明的目的在于提供一种基于铟凸点的无助焊剂回流的工艺方法， 常 用的阻止氧化的金属材料是金和银。 实际工艺中， 在铟的表层引入一层金层 来阻止铟的氧化而实现其在较低温度下回流成球是不现实的。 这是因为从金- 铟平衡相图可知， 在铟中引入少量的金， 就会使其熔点急剧上升， 而这一点 是不希望看到的， 因为这样会失去铟作为一种性能优良的低温焊料的优势。 而如果在铟的表面引入银层则不会出现这种情况， 显然可以避免这种情况： 但从铟-银平衡相图知， 向铟中引入银后， 其焊料熔点先降低， 当铟银质量比 约为 96%: 4%时到达共晶点， 此时焊料熔点为 144° C， 比铟的熔点 156.6° C还低， 其后随着银含量的增加， In-Ag焊料熔点缓慢上升。 由此可见， 用银 对铟包覆既可防止铟凸点表面氧化， 同时还能保证焊料熔点不会迅速上升， 从而可实现低温回流。
因此， 本发明中设计出了一种工艺方法以实现银对铟凸点阵列的包覆， 该工艺歩骤的设计是本发明的关键点。 所以本发明是以在硅基板上的制作流 程为例说明具体的工艺过程。
该发明的具体工艺过程如下：
A.基板金属化
(a) 对硅片进行热氧化， 以得到绝缘的基板；
(b) 在基板上溅射种子层， 如溅射 Ti/Cu/Ti， 在铜表面溅射 Ti层是为了增 强钝化层与该金属层间的附着力且避免铜层的氧化； 铜与钝化层间的粘附力 很差， Ti与 Si02的粘附力较强；
B.钝化层开口 (a)用 PECVD (plasma-enhanced chemical vapor deposition, 离子增强型气 相沉积法） 沉积 Si02作为钝化层；
(b) 涂覆薄胶 （厚度为 1-3μηι， 此厚度是为了利用电镀铜来实现铜 UBM 制作） 并光刻， 之后对光刻胶清边， 用 BOE (bufferrd-oxide-etch, 缓冲氧化 层腐蚀）湿法腐蚀或 RIE (reaction ion etching, 反应离子刻蚀）实现钝化层进 行开口和硅片边缘的接触电极的形成， 钝化层开口直径是根据凸点直径而定， 一般为 30-50 m;
C.凸点下金属化层增厚
(a) 利用电镀法对 Ti/Cu UBM层进行铜增厚。 因溅射的铜层不能做得较 厚， 一般只做到 1000A-6000A间； 较薄的铜层极易导致凸点在回流过程发生 脱落， 增加铜层厚度可以改善焊球脱落发生脱落的现象； 通常增厚后厚度为 3-4 μ m;
D.电镀铟凸点
(a) 丙酮去胶 （也可在凸点回流前进行） ·'
(b) 电镀铟凸点， 电镀过程以及电镀完成后应避免铟凸点与空气的直接接 触， 将电镀完成的硅片置于去离子水或酒精等中可实现其与空气的接触；
E.电镀银层包覆铟凸点
(a) 铟凸点表面镀银； 镀层厚度通过电镀电流大小和电镀时间控制， 最 终结果是用银层实现对铟凸点表层的完全包覆； 但同时要保证银镀层较薄， 从而使得 In-Ag焊料熔点不会太高； 银铟原子比例接近 Ag-In共晶点；
F.凸点回流
(a) 选择恰当的回流曲线， 将凸点阵列置于氮气气氛或氢气气氛退火炉 中进行回流，回流峰值温度在 180-220°C之间；在回流峰值温度上回流 3-8min， 使之回流成球；
(b) 对回流好的凸点进行切片等后期处理。
由此可见， 本发明提出了可实现凸点在无助焊剂帮助下成功实现回流的 工艺方法。 以性能优良、 熔点低的铟焊料为主要成分； 采取比较简单的按次 序两次电镀工艺， 即先电镀出铟凸点， 再在其表层电镀一层用于阻止氧化的 银镀层； 较低的回流峰值温度， 由于铟-银在一个较大的原子比例范围内均保 持较低的熔点， 因此实现了银对铟的包覆后， 凸点仍可在较低的温度下实现 回流成球， 范例中的回流峰值温度为 200° C, 此特点可满足某些需低温焊接 的应用场合。 采用本发明提供的工艺可实现铟凸点阵列的无助焊回流， 该工 艺可应用于某些特殊的光电芯片， MEMS 芯片和生物检测芯片中的倒装互连 中。
本发明的特征在于：
①对衬底进行金属化和实现钝化层开口后， 采取依次顺序电镀的方式实 现凸点制备的工艺歩骤， 这是本发明的关键之处；
②用 Ti/Cu/Ti对基板进行金属化；
③用 PECVD制作 Si02作为凸点钝化层， 用 BOE湿法腐蚀对其进行开口；
④通过控制电镀条件来实现银层对铟凸点表层的完美包覆；
⑤凸点回流： 将需回流的芯片放于温度过程可控的退火炉中， 且回流设 备提供氮气或氢气等保护氛围。 附图说明
图 1为本发明提供的无助焊剂回流工艺流程图。 具体实施方式
为了能使本发明的优点和积极效果得到充分体现， 下面结合附图 1， 有 8 个歩骤， 包括实现衬底金属化， 钝化层开口， 电镀铜、 铟和银， 凸点回流成 球等工艺，具体描述了在硅片上实现直径为 40μηι左右的铟凸点无助焊回流工 艺之一例。
歩骤 1基板金属化， 在硅基板上热氧化一层做绝缘用的氧化层 101， 厚度 为 5000Α, 再在其上溅射 Ti/Cu/Ti (200 A /2000 A /200 A) 的复合金属薄膜， 以作为电镀的种子层和 UBM (under bump metallization, 凸点下金属化层） ； 歩骤 2钝化层制作， PECVD (plasma-enhanced chemical vapor deposition, 离子增强型气相沉积法） 沉积一层 5000A的 Si02 103作为钝化层；
歩骤 3， 涂覆并光刻 1.7μιη的 S1912 104， 为钝化层开口做准备， S1912 是一种成熟的、 常用的薄胶光刻胶， 用它很容易获得均匀且厚度 1-3μηι的涂 覆效果；
歩骤 4钝化层开口， 采用 ΒΟΕ湿法腐蚀 SiO^DTi露出溅射的铜层 105， 钝 化层开口直径为 40μιη左右；
歩骤 5金属化层增厚， 利用铜电镀液对铜层增厚， 电镀铜 106层厚度约 为 3-4μηι; 铜层增厚后， 用丙酮去除薄胶 S1912; 用丙酮去胶工艺也可放在歩 骤 8凸点回流前进行。
歩骤 6电镀铟凸点， 在电流密度为 5-20mA/cm2下电镀铟， 通过控制电镀 时间来控制电镀铟的量， 最后电镀出铟凸点 107; 将电镀完铟凸点的硅片置于 去离子水中， 以避免铟凸点表层发生氧化；
歩骤 7， 在铟凸点表层利用电镀的方法实现银层 108对铟凸点的包覆， 银 层厚度需控制在一定的范围内， 以避免银铟原子比例偏离共晶点太远而致使 其熔点高于铟熔点太多； 所以应选择接近共晶点；
歩骤 8， 将电镀完成的硅片置于氮气气氛的回流炉中进行回流， 控制生成 的合金成分， 其中回流时峰值温度为 200° C, 在此温度上回流 5min， 最后得 到经过回流所得的 109凸点； 进行切点后处理。

Claims

权 利 要 求 书
1、 一种基于铟凸点的无助焊剂回流工艺方法， 其特征在于包括以下各歩：
A.基板金属化
(a)对硅片进行热氧化， 以得到绝缘的基板；
(b)在基板上溅射 Ti/Cu/Ti种子层；
B.钝化层开口
(a)用离子增强型气相沉积法沉积 Si02作为钝化层；
(b)涂覆薄胶并光刻， 之后对光刻胶清边， 用缓冲氧化层腐蚀湿法腐蚀或 反应离子刻蚀实现钝化层开口和硅片边缘形成接触电极；
C.凸点下金属化层增厚
(a) 利用电镀法对 Ti/Cu UBM层进行铜增厚；
D.电镀铟凸点
(a)在上述歩骤 C铜层增厚后， 丙酮去胶；
(b)电镀铟凸点， 电镀过程以及电镀完成后应避免铟凸点与空气的直接接 触， 将电镀完成的硅片置于去离子水或酒精中实现其与空气的接触；
E.电镀银层包覆铟凸点
铟凸点表面镀银， 使银层实现对铟凸点表层的包覆， 铟凸点仍可在较低 温度下实现成球；
F.凸点回流
(a)将歩骤 E的包覆银层的铟凸点， 在氮气或氢气氛退火炉中进行回流成 球状， 回流峰值温度为 180-220°C之间；
(b)对回流后成球状的凸点进行切片后处理。
2、 按权利要求 1所述的方法， 其特征在于在基板上溅射 Ti/Cu/Ti种子层厚度 依次为 200A/2000A/200A。
3、 按权利要求 1所述的方法， 其特征在于歩骤 B中 （b) 所述的涂覆薄胶厚 度为 1-3μιη， 所述的薄胶为 S1912。
4、 按权利要求 1所述的方法， 其特征在于歩骤 B中 （b) 所述的钝化层开口 直径根据凸点直径而定， 通常为 30-50μηι。
5、 按权利要去 1所述的方法， 其特征在于歩骤 Ε中所述的铜层增厚后厚度为 3-4μπι。
6、 按权利要求 1所述的方法， 其特征在于铜层增厚后用丙酮去胶歩骤或放在 歩骤 F凸点回流前进行。
7、 按权利要求 1所述的方法， 其特征在于：
①电镀铟凸点的电流密度为 5-20mA/cm2 ;
②歩骤 E中银层对铟层的包覆是通过电镀电流大小和时间控制的， 银铟 原子比例接近 Ag-In的共晶点。
8、 按权利要求 1所述的方法， 其特征在于歩骤 F中在所述的回流峰值温度时 回流时间为 3-8分钟， 使之回流成球。
9、 按权利要求 1所述的方法， 其特征在于歩骤 E中回流峰值温度为 200°C。
10、按权利要求 8或 9所述的方法， 其特征在于在 200°C峰值温度回流时间为 5分钟。
PCT/CN2011/081091 2010-10-22 2011-10-21 一种基于铟凸点的无助焊剂回流工艺方法 WO2012051960A1 (zh)

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