TW202105459A - 接合基板之方法 - Google Patents

接合基板之方法 Download PDF

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Publication number
TW202105459A
TW202105459A TW108138831A TW108138831A TW202105459A TW 202105459 A TW202105459 A TW 202105459A TW 108138831 A TW108138831 A TW 108138831A TW 108138831 A TW108138831 A TW 108138831A TW 202105459 A TW202105459 A TW 202105459A
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substrate
bonding interface
bonding
interface
deposited
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TW108138831A
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普拉由帝 黎安東
源輝 徐
司瑞斯坎薩羅傑 希魯納弗卡羅蘇
阿維德 桑達拉江
戴尋東
馮啟文
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美商應用材料股份有限公司
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Publication of TW202105459A publication Critical patent/TW202105459A/zh

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Abstract

此處提供例如在基板級封裝中使用的用於接合基板之方法。在某些實施例中，一種用於接合基板之方法包括：實行電化學沉積（ECD），以在第一基板及第二基板之各者上沉積至少一個材料；在第一基板及第二基板上實行化學機械研磨（CMP），以在第一基板及第二基板之各者上形成接合界面；將第一基板定位在第二基板上，使得第一基板上的接合界面與第二基板上的接合界面對齊；及使用第一基板上的接合界面及第二基板上的接合界面，將第一基板接合至第二基板。

Description

接合基板之方法
本揭露案大致關於用於基板處理之方法，且更具體而言，關於例如在基板級封裝中使用的用於接合基板之方法。
當前銅對銅（Cu-Cu）接合處理技術，儘管適合在基板級封裝中使用，但具有一或更多缺點。舉例而言，為了達成將Cu表面彼此接合的足夠的接合強度，其中在基板級封裝期間可變得高度氧化，目前的Cu-Cu接合處理技術使用從約300°C-400°C的溫度，及可超過數兆帕（MPa）的壓力。然而，使用此等高的溫度/壓力可導致當包括Cu表面的基板（例如，矽（Si）基板）彼此接合時不精確的對準，例如歸因於基板上的Si及接合所使用的Cu之間熱膨脹係數（CTE）的不匹配。再者，此等高的溫度/壓力某些時候可損害下層的基板及/或形成於其上的電路。此外，與目前Cu-Cu接合處理技術相關聯的長的處理時間（可超過30分鐘）及嚴格的真空要求（需要用以降低在Cu表面上的氧化）可降低基板可接合在一起的產量，且增加處理成本。
如此，發明人已提供改良的技術用於處理基板。
此處提供例如在基板級封裝中使用的用於接合基板之方法。在某些實施例中，一種用於接合基板之方法包括：實行電化學沉積（ECD），以在第一基板及第二基板之各者上沉積至少一個材料；在第一基板及第二基板上實行化學機械研磨（CMP），以在第一基板及第二基板之各者上形成接合界面；將第一基板定位在第二基板上，使得第一基板上的接合界面與第二基板上的接合界面對齊；及使用第一基板上的接合界面及第二基板上的接合界面，將第一基板接合至第二基板。
在某些實施例中，一種用於接合基板之方法包括：實行物理氣相沉積（PVD），以在第一基板及第二基板之各者上沉積第一材料；實行ECD，以在第一基板及第二基板之各者上沉積第二材料；在第一基板及第二基板上實行CMP，以在第一基板及第二基板之各者上形成第二材料的接合界面；將第一基板定位在第二基板上，使得第一基板上的接合界面與第二基板上的接合界面對齊；及使用第一基板上的接合界面及第二基板上的接合界面，將第一基板接合至第二基板。
在某些實施例中，一種非暫態電腦可讀取儲存媒體，具有儲存於其上的指令，當藉由處理器執行時，實行用於接合基板之方法。方法可包括此處所揭露的任何實施例。在某些實施例中，方法包括：實行ECD，以在第一基板及第二基板之各者上沉積至少一個材料；在第一基板及第二基板上實行CMP，以在第一基板及第二基板之各者上形成接合界面；將第一基板定位在第二基板上，使得第一基板上的接合界面與第二基板上的接合界面對齊；及使用第一基板上的接合界面及第二基板上的接合界面，將第一基板接合至第二基板。
在某些實施例中，一種用於接合基板之方法，包括：實行ECD，以在第一基板及第二基板之各者上沉積至少一個材料，且在第一基板及第二基板之各者上形成接合界面；將第一基板定位在第二基板上，使得第一基板上的接合界面與第二基板上的接合界面對齊；及使用第一基板上的接合界面及第二基板上的接合界面，將第一基板接合至第二基板。
以下說明本揭露案的其他及進一步實施例。
此處現所述為在基板級封裝中使用的用於銅對銅（Cu-Cu）接合之方法。
第1圖根據本揭露案的至少某些實施例，為在基板級封裝中使用的用於接合基板之方法的流程圖，且第2A-2G圖為使用第1圖之方法形成的基板200的概要圖。
在實行第1圖的方法之前，基板200可使用一或更多適合的材料及一或更多傳統預處理技術而預形成。舉例而言，基板200的預處理可包括在基板200上實行光刻處理，包括以矽（Si）或其他適合的材料形成的底層207、沉積於底層207上的介電層205（例如，氧化、聚合物或類似者）及沉積於介電層205（第2A圖）上的光阻（PR）層203。在完成光刻處理之後，可在基板200上實行蝕刻及PR剝離處理（第2B圖），以移除PR層203及某些介電層205。可使用物理氣相沉積（PVD）及/或ECD處理以在基板200的底層207及介電層205上沉積一或更多適合的互連材料201（第2C圖），例如銅（Cu）、鋁（Al）或其他適合的材料。此後，可使用CMP處理以移除某些互連材料201，在互連材料上可沉積一或更多材料以形成接合界面（第2D圖），用以將兩個基板200彼此接合。在基板200上實行CMP處理之後，於基板200的底層207及介電層205上剩餘的互連材料201之厚度（或量）可取決於一或更多因素，例如介電層205的厚度、底層207的厚度、基板200的預期用途等等。
根據第1圖的方法，第一基板（例如，基板200）及第二基板（例如，與基板200相同的基板200a（第2G圖））可彼此接合。為了圖示之目的，除非另外說明，第1圖的方法就基板200的方面敘述。在102處，於第2D圖的基板200（及基板200a）上實行ECD處理，以在基板200的互連材料201的表面上沉積一或更多材料。可沉積在互連材料201的表面上的材料可包括但非限於錫（Sn）、銀（Ag）、鉛（Pb）、銦（In）、鉍（Bi）、金（Au）或此等之結合（例如，（SnAg）共熔焊料202）。沉積在互連材料201的表面上的焊料202的厚度可從約1µm至約5µm的範圍（第2E圖），然而，焊料202的厚度可小於1µm及大於5µm（第2F圖），且可調整以適應互連材料201、介電層205、底層207及/或製造商的特定製造能力的特定配置。
舉例而言，當102處的ECD處理可提供受控的焊料202沉積在互連材料201（例如，厚度從50nm至約100nm的範圍（例如，見第2F圖））的表面上時，在102處可使用EMP處理在互連材料201的表面上形成受控的凹陷/突起，或焊料204的接合界面（界面焊料204），亦即，使得界面焊料204不會延伸經過介電層205的表面。
或者，在102處當EMP處理無法在互連材料201的表面上提供受控的焊料202沉積（第2E圖）時，於104處在基板200（及基板200a）上實行可選的CMP處理，以幫助在基板200的互連材料201的表面上形成界面焊料204（第2F圖）。如上所述，保留在互連材料201的表面上的界面焊料204的厚度/量可從50nm約100nm的範圍，然而，界面焊料204的厚度可小於50nm及大於100nm。再次，界面焊料204的厚度可調整以適應互連材料201、介電層205及/或底層207的特定配置。
為了將基板200接合至基板200a，於106處，兩個基板200、200a可定位於彼此頂部，使得在兩個基板200、200a上的界面焊料204、204a彼此對齊（第2G圖）。一旦對齊之後，在108處，可使用包括但非限於熱壓接合、混合接合或其他已知接合處理的一或更多已知結合處理，以使用界面焊料204、204a將基板200、200a彼此接合。接合處理可在大氣壓力下實行，且可實行接合處理的溫度可從約230°C至約250°C的範圍，然而，溫度可小於230°C及大於250°C，即，歸因於界面焊料204使用具有相對低熔點的材料形成（例如，共熔焊料202）。
在兩個基板200、200a於界面焊料204、204a處彼此接合之後，於兩個基板200、200a之間達成精細間距互連：在基板200、200a的介電層205、205a的未接合表面之間不存在間隙。
第3圖為用於將第一基板（例如，基板400（第4A及4B圖））接合至第二基板（例如，與基板400相同的基板400a（第4C圖））之方法的流程圖。用於形成基板400、400a之第3圖的方法與用於形成第2A-2G圖之基板200、200a的方法實質上相同。因此，此處僅說明對用於形成基板400、400a之方法為獨特的特徵。為了圖示之目的，除非另外說明，第3圖的方法就基板400的方面敘述。
在基板400（及基板400a）上實行ECD處理之前，於300處，在基板400（及基板400a）上實行PVD處理，以在互連材料401（及在基板400a上類似的互連材料401a）上沉積一或更多適合的材料層，而可提供用於將焊料402黏附至此的表面。舉例而言，Cu、鈦（Ti）或其結合的層406可沉積在互連材料401上。層406的厚度可從0.1µm至約1µm的範圍，然而，層406的厚度可小於0.1µm及大於1µm。可調整層406的厚度以適應互連材料401、介電405、底層407及/或待沉積於層406上的焊料402的特定配置。
在302處，於基板400（及基板400a）上實行ECD處理，以在層406的表面上沉積焊料402（類似於102處的ECD處理）。在302處實行ECD處理之前，於層406上可實行一或更多其他處理，例如蝕刻處理、CMP處理等等，以幫助獲得層406的所欲厚度。
在302處於層406的表面上沉積焊料402之後，在304處可於基板400（及基板400a）上實行CMP處理（類似於104處的CMP處理）。CMP處理移除過多的焊料402、402a，以建立界面焊料404、404a的層。為了將基板400、400a彼此接合，在306處，兩個基板400、400a可初始定位於彼此頂部，使得兩個基板400、400a上的界面焊料404、404a及層406、406a（例如，在實行CMP處理之後層406、406a的剩餘部分）彼此對齊（第4C圖）。一旦對齊之後，可執行以上所述的接合處理，而在308處將兩個基板400、400a彼此接合。
此處所述用於接合基板之方法提供用於基板級封裝的相對單純且具成本效益的方式，且克服通常與傳統基板接合處理相關聯的缺點。更具體而言，當與如上所述使用高的溫度/壓力，例如300°C-400°C及數個MPa的傳統接合處理相比較時，此處所述的接合處理使用相對低的溫度/壓力將兩個基板200/200a、400/400a彼此接合。
儘管以上導向本揭露案的實施例，可衍生本揭露案的其他及進一步實施例而不會悖離本揭露案的基本範疇。
102:步驟 104:步驟 106:步驟 108:步驟 200:基板 200a:基板 201:互連材料 201a:互連材料 202:焊料 203:光阻層 204:界面焊料 204a:界面焊料 205:介電層 205a:介電層 207:底層 300:步驟 302:步驟 304:步驟 306:步驟 308:步驟 400:基板 400a:基板 401:互連材料 401a:互連材料 402:焊料 404:界面焊料 404a:界面焊料 405:介電 406:層 406a:層 407:底層
以上簡要概述且以下更詳細討論的本揭露案的實施例，可藉由參考在隨附圖式中描繪的本揭露案的圖示性實施例而理解。然而，隨附圖式僅圖示本揭露案的通常實施例，且因此不應考量為範疇之限制，因為本揭露案認可其他均等效果的實施例。
第1圖根據本揭露案的至少某些實施例，為在基板級封裝中使用的用於接合基板之方法的流程圖。
第2A-2G圖根據本揭露案的至少某些實施例，為使用第1圖之方法形成的基板的概要圖。
第3圖根據本揭露案的至少某些實施例，為在基板級封裝中使用的用於接合基板之方法的流程圖。
第4A-4C圖根據本揭露案的至少某些實施例，為使用第3圖之方法形成的基板的概要圖。
為了促進理解，已儘可能地使用相同的元件符號代表共通圖式中相同的元件。圖式並非按照尺寸繪製，且為了清楚可能省略。一個實施例的元件及特徵可有益地併入其他實施例中而無須進一步說明。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
102:步驟
104:步驟
106:步驟
108:步驟

Claims (20)

  1. 一種用於接合基板之方法，包含以下步驟： 實行電化學沉積（ECD），以在一第一基板及一第二基板之各者上沉積至少一個材料；在該第一基板及該第二基板上實行化學機械研磨（CMP），以在該第一基板及該第二基板之各者上形成一接合界面；將該第一基板定位在該第二基板上，使得該第一基板上的該接合界面與該第二基板上的該接合界面對齊；及使用該第一基板上的該接合界面及該第二基板上的該接合界面，將該第一基板接合至該第二基板。
  2. 如請求項1所述之方法，其中該至少一個材料為Sn、Ag、Pb、In、Bi或Au之至少一者。
  3. 如請求項2所述之方法，其中該第一基板及該第二基板之至少一者包含Cu或Al之至少一者，及Si、氧化物或一聚合物之至少一者，且 其中該至少一個材料沉積於該Cu或Al之至少一者上。
  4. 如請求項1至3任一項所述之方法，其中該至少一個材料沉積於該第一基板及該第二基板之各者上達到不超過5µm的一厚度。
  5. 如請求項1至3任一項所述之方法，其中在實行CMP之後，在該第一基板上的該接合界面及在該第二基板上的該接合界面之各者具有不超過100nm的一厚度。
  6. 如請求項1至3任一項所述之方法，其中將該第一基板接合至該第二基板在大氣壓力下實行。
  7. 如請求項1至3任一項所述之方法，其中將該第一基板接合至該第二基板在不超過250°C的一溫度下實行。
  8. 一種用於接合基板之方法，包含以下步驟： 實行物理氣相沉積（PVD），以在一第一基板及一第二基板之各者上沉積一第一材料；實行電化學沉積（ECD），以在該第一基板及該第二基板之各者上沉積一第二材料；在該第一基板及該第二基板上實行化學機械研磨（CMP），以在該第一基板及該第二基板之各者上形成該第二材料的一接合界面；將該第一基板定位在該第二基板上，使得該第一基板上的該接合界面與該第二基板上的該接合界面對齊；及使用該第一基板上的該接合界面及該第二基板上的該接合界面，將該第一基板接合至該第二基板。
  9. 如請求項8所述之方法，其中該第一材料為Ti、Cu之一者及其之結合，且該第二材料為Sn、Ag、Pb、In、Bi或Au之一者。
  10. 如請求項9所述之方法，其中該第一基板及該第二基板之至少一者包含Cu或Al之至少一者，及Si、氧化物或一聚合物之至少一者，且 其中該第一材料沉積於該Cu或Al之至少一者上，且該第二材料沉積於該第一材料上。
  11. 如請求項8至10任一項所述之方法，其中該第一材料沉積至不超過1µm的一厚度，且其中該第二材料沉積至不超過5µm的一厚度。
  12. 如請求項8至10任一項所述之方法，其中在實行CMP之後，在該第一基板上的該接合界面及該第一材料具有不超過100nm的一結合的厚度，且在該第二基板上的該接合界面及該第一材料具有不超過100nm的一結合的厚度。
  13. 如請求項8至10任一項所述之方法，其中將該第一基板接合至該第二基板在大氣壓力下實行。
  14. 如請求項8至10任一項所述之方法，其中將該第一基板接合至該第二基板在不超過250°C的一溫度下實行。
  15. 一種非暫態電腦可讀取儲存媒體，具有儲存於其上的指令，當藉由一處理器執行時，實行用於接合基板之一方法，該方法包含以下步驟： 實行電化學沉積（ECD），以在一第一基板及一第二基板之各者上沉積至少一個材料；在該第一基板及該第二基板上實行化學機械研磨（CMP），以在該第一基板及該第二基板之各者上形成一接合界面；將該第一基板定位在該第二基板上，使得該第一基板上的該接合界面與該第二基板上的該接合界面對齊；及使用該第一基板上的該接合界面及該第二基板上的該接合界面，將該第一基板接合至該第二基板。
  16. 如請求項15所述之非暫態電腦可讀取儲存媒體，其中該至少一個材料為Sn、Ag、Pb、In、Bi或Au之至少一者； 其中該第一基板及該第二基板之至少一者包含Cu或Al之至少一者，及Si、氧化物或一聚合物之至少一者；其中該至少一個材料沉積於該Cu或Al之至少一者上；及其中該至少一個材料沉積於該第一基板及該第二基板之各者上達到不超過5µm的一厚度。
  17. 如請求項15至16任一項所述之非暫態電腦可讀取儲存媒體，其中在實行CMP之後，在該第一基板上的該接合界面及在該第二基板上的該接合界面之各者具有不超過100nm的一厚度。
  18. 如請求項15至16任一項所述之非暫態電腦可讀取儲存媒體，其中將該第一基板接合至該第二基板在大氣壓力下實行，且其中將該第一基板接合至該第二基板在不超過250°C的一溫度下實行。
  19. 一種用於接合基板之方法，包含以下步驟： 實行電化學沉積（ECD），以在一第一基板及一第二基板之各者上沉積至少一個材料，且在該第一基板及該第二基板之各者上形成一接合界面；將該第一基板定位在該第二基板上，使得該第一基板上的該接合界面與該第二基板上的該接合界面對齊；及使用該第一基板上的該接合界面及該第二基板上的該接合界面，將該第一基板接合至該第二基板。
  20. 如請求項19所述之方法，進一步包含以下步驟：在實行ECD之後，於該第一基板及該第二基板上實行化學機械研磨（CMP），使得該第一基板及該第二基板之各者上所形成的該接合界面具有不超過100nm的一厚度。
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