CN1826690A - 沿多个表面具有应变晶格结构的fet沟道 - Google Patents
沿多个表面具有应变晶格结构的fet沟道 Download PDFInfo
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- CN1826690A CN1826690A CNA2004800210466A CN200480021046A CN1826690A CN 1826690 A CN1826690 A CN 1826690A CN A2004800210466 A CNA2004800210466 A CN A2004800210466A CN 200480021046 A CN200480021046 A CN 200480021046A CN 1826690 A CN1826690 A CN 1826690A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1211—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with field-effect transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
- H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
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- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (35)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/626,760 | 2003-07-21 | ||
US10/626,760 US6921982B2 (en) | 2003-07-21 | 2003-07-21 | FET channel having a strained lattice structure along multiple surfaces |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1826690A true CN1826690A (zh) | 2006-08-30 |
CN100479158C CN100479158C (zh) | 2009-04-15 |
Family
ID=34080479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800210466A Expired - Lifetime CN100479158C (zh) | 2003-07-21 | 2004-07-19 | 沿多个表面具有应变晶格结构的fet沟道 |
Country Status (6)
Country | Link |
---|---|
US (5) | US6921982B2 (zh) |
EP (1) | EP1652235A4 (zh) |
KR (1) | KR100773009B1 (zh) |
CN (1) | CN100479158C (zh) |
TW (1) | TWI281248B (zh) |
WO (1) | WO2005010944A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102956700A (zh) * | 2011-08-30 | 2013-03-06 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
CN102969340A (zh) * | 2011-08-30 | 2013-03-13 | 台湾积体电路制造股份有限公司 | 具有限定在类金刚石形状半导体结构中的沟道的FinFET器件 |
CN103137685A (zh) * | 2011-11-24 | 2013-06-05 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
CN105453251A (zh) * | 2013-08-01 | 2016-03-30 | 高通股份有限公司 | 在基板上从不同材料形成鳍的方法 |
CN113316850A (zh) * | 2019-01-18 | 2021-08-27 | 微软技术许可有限责任公司 | 设备的制造 |
Families Citing this family (367)
Publication number | Priority date | Publication date | Assignee | Title |
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US6503783B1 (en) * | 2000-08-31 | 2003-01-07 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
KR100483425B1 (ko) * | 2003-03-17 | 2005-04-14 | 삼성전자주식회사 | 반도체소자 및 그 제조 방법 |
JP4277021B2 (ja) * | 2003-05-30 | 2009-06-10 | パナソニック株式会社 | 半導体装置 |
US7456476B2 (en) * | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US6909151B2 (en) | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7307467B2 (en) * | 2006-04-28 | 2007-12-11 | International Business Machines Corporation | Structure and method for implementing oxide leakage based voltage divider network for integrated circuit devices |
US7355253B2 (en) * | 2003-08-22 | 2008-04-08 | International Business Machines Corporation | Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates |
US6970373B2 (en) * | 2003-10-02 | 2005-11-29 | Intel Corporation | Method and apparatus for improving stability of a 6T CMOS SRAM cell |
US7091566B2 (en) * | 2003-11-20 | 2006-08-15 | International Business Machines Corp. | Dual gate FinFet |
KR100585111B1 (ko) * | 2003-11-24 | 2006-06-01 | 삼성전자주식회사 | 게르마늄 채널 영역을 가지는 비평면 트랜지스터 및 그제조 방법 |
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- 2004-07-19 EP EP04757122A patent/EP1652235A4/en not_active Withdrawn
- 2004-07-19 WO PCT/US2004/023183 patent/WO2005010944A2/en active Search and Examination
- 2004-07-19 CN CNB2004800210466A patent/CN100479158C/zh not_active Expired - Lifetime
- 2004-07-19 KR KR1020067000697A patent/KR100773009B1/ko active IP Right Grant
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2005
- 2005-05-24 US US11/137,811 patent/US7198990B2/en not_active Expired - Lifetime
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2008
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Cited By (11)
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CN102956700A (zh) * | 2011-08-30 | 2013-03-06 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
WO2013029318A1 (zh) * | 2011-08-30 | 2013-03-07 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
CN102969340A (zh) * | 2011-08-30 | 2013-03-13 | 台湾积体电路制造股份有限公司 | 具有限定在类金刚石形状半导体结构中的沟道的FinFET器件 |
CN102956700B (zh) * | 2011-08-30 | 2015-06-24 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
CN103137685A (zh) * | 2011-11-24 | 2013-06-05 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
CN103137685B (zh) * | 2011-11-24 | 2015-09-30 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
US9190331B2 (en) | 2011-11-24 | 2015-11-17 | Semiconductor Manufacturing International (Shanghai) Corporation | Semiconductor device and manufacturing method thereof |
US9190330B2 (en) | 2011-11-24 | 2015-11-17 | Semiconductor Manufacturing International (Shanghai) Corporation | Semiconductor device and manufacturing method thereof |
CN105453251A (zh) * | 2013-08-01 | 2016-03-30 | 高通股份有限公司 | 在基板上从不同材料形成鳍的方法 |
CN105453251B (zh) * | 2013-08-01 | 2019-05-28 | 高通股份有限公司 | 在基板上从不同材料形成鳍的方法 |
CN113316850A (zh) * | 2019-01-18 | 2021-08-27 | 微软技术许可有限责任公司 | 设备的制造 |
Also Published As
Publication number | Publication date |
---|---|
US6921982B2 (en) | 2005-07-26 |
US20080105898A1 (en) | 2008-05-08 |
WO2005010944A3 (en) | 2005-08-11 |
KR100773009B1 (ko) | 2007-11-05 |
US20050218427A1 (en) | 2005-10-06 |
US20050017377A1 (en) | 2005-01-27 |
TW200516762A (en) | 2005-05-16 |
US7198990B2 (en) | 2007-04-03 |
EP1652235A4 (en) | 2008-09-17 |
EP1652235A2 (en) | 2006-05-03 |
US20080105900A1 (en) | 2008-05-08 |
TWI281248B (en) | 2007-05-11 |
WO2005010944A2 (en) | 2005-02-03 |
US20070111406A1 (en) | 2007-05-17 |
CN100479158C (zh) | 2009-04-15 |
KR20060035746A (ko) | 2006-04-26 |
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