CN1741263A - 制造半导体器件的方法以及一种半导体衬底 - Google Patents
制造半导体器件的方法以及一种半导体衬底 Download PDFInfo
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- CN1741263A CN1741263A CNA2005101098493A CN200510109849A CN1741263A CN 1741263 A CN1741263 A CN 1741263A CN A2005101098493 A CNA2005101098493 A CN A2005101098493A CN 200510109849 A CN200510109849 A CN 200510109849A CN 1741263 A CN1741263 A CN 1741263A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 100
- 238000005530 etching Methods 0.000 claims abstract description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 46
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000011259 mixed solution Substances 0.000 claims description 42
- 239000013078 crystal Substances 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 5
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- 238000007254 oxidation reaction Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 3
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- 238000012545 processing Methods 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
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- 239000000243 solution Substances 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- 229960002163 hydrogen peroxide Drugs 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3085—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Element Separation (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP248957/2004 | 2004-08-27 | ||
JP2004248957A JP2006066726A (ja) | 2004-08-27 | 2004-08-27 | 半導体装置の製造方法及び半導体基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1741263A true CN1741263A (zh) | 2006-03-01 |
CN100452345C CN100452345C (zh) | 2009-01-14 |
Family
ID=35943914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101098493A Expired - Fee Related CN100452345C (zh) | 2004-08-27 | 2005-08-26 | 制造半导体器件的方法以及一种半导体衬底 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7439183B2 (zh) |
JP (1) | JP2006066726A (zh) |
KR (1) | KR100693237B1 (zh) |
CN (1) | CN100452345C (zh) |
TW (1) | TWI279859B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102330089A (zh) * | 2010-07-14 | 2012-01-25 | 中国科学院微电子研究所 | 硅片打孔系统及方法 |
CN102347349A (zh) * | 2010-07-28 | 2012-02-08 | 中国科学院微电子研究所 | 半导体结构及其制作方法 |
CN102361011A (zh) * | 2008-06-11 | 2012-02-22 | 美格纳半导体有限会社 | 形成半导体器件的栅极的方法 |
CN106990461A (zh) * | 2016-01-20 | 2017-07-28 | 上海新微技术研发中心有限公司 | 一种直角顶角硅阶梯光栅及其制造方法 |
CN108447774A (zh) * | 2018-03-29 | 2018-08-24 | 睿力集成电路有限公司 | 同时去除热氧化膜和去除沉积氧化膜的方法及设备 |
CN109795977A (zh) * | 2017-11-16 | 2019-05-24 | 上海新微技术研发中心有限公司 | 一种在薄膜中形成斜面的方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200625437A (en) * | 2004-12-30 | 2006-07-16 | Macronix Int Co Ltd | Shallow trench isolation process of forming smooth edge angle by cleaning procedure |
US7566949B2 (en) * | 2006-04-28 | 2009-07-28 | International Business Machines Corporation | High performance 3D FET structures, and methods for forming the same using preferential crystallographic etching |
KR100869845B1 (ko) * | 2006-12-04 | 2008-11-21 | 주식회사 하이닉스반도체 | 산화막 패턴의 형성 방법 및 이를 이용한 반도체 소자의패터닝 방법 |
US7776713B2 (en) * | 2007-05-30 | 2010-08-17 | Macronix International Co., Ltd. | Etching solution, method of surface modification of semiconductor substrate and method of forming shallow trench isolation |
JP5565735B2 (ja) * | 2010-11-12 | 2014-08-06 | 国立大学法人東北大学 | Soi基板のエッチング方法及びsoi基板上の裏面照射型光電変換モジュールの作製方法 |
US10868108B2 (en) * | 2018-06-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having high voltage lateral capacitor and manufacturing method thereof |
US11289637B2 (en) * | 2019-04-11 | 2022-03-29 | International Business Machines Corporation | Transmon qubits with trenched capacitor structures |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6085539A (ja) | 1983-10-17 | 1985-05-15 | Toshiba Corp | 半導体装置の製造方法 |
US4702795A (en) * | 1985-05-03 | 1987-10-27 | Texas Instruments Incorporated | Trench etch process |
KR0156115B1 (ko) | 1994-06-16 | 1998-12-01 | 문정환 | 반도체 소자의 격리막 구조 및 형성방법 |
JP3575859B2 (ja) * | 1995-03-10 | 2004-10-13 | 株式会社東芝 | 半導体基板の表面処理方法及び表面処理装置 |
US6348157B1 (en) * | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
US6617226B1 (en) * | 1999-06-30 | 2003-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
US6479395B1 (en) * | 1999-11-02 | 2002-11-12 | Alien Technology Corporation | Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings |
JP2003051536A (ja) | 2001-08-06 | 2003-02-21 | Sony Corp | 基板処理方法および半導体装置の製造方法 |
JP3923768B2 (ja) | 2001-09-19 | 2007-06-06 | 株式会社東芝 | 半導体基板構造の製造方法 |
US6656852B2 (en) * | 2001-12-06 | 2003-12-02 | Texas Instruments Incorporated | Method for the selective removal of high-k dielectrics |
KR100546855B1 (ko) * | 2002-12-28 | 2006-01-25 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
-
2004
- 2004-08-27 JP JP2004248957A patent/JP2006066726A/ja active Pending
-
2005
- 2005-08-15 TW TW094127834A patent/TWI279859B/zh not_active IP Right Cessation
- 2005-08-25 KR KR1020050078204A patent/KR100693237B1/ko active IP Right Grant
- 2005-08-26 US US11/211,708 patent/US7439183B2/en not_active Expired - Fee Related
- 2005-08-26 CN CNB2005101098493A patent/CN100452345C/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102361011A (zh) * | 2008-06-11 | 2012-02-22 | 美格纳半导体有限会社 | 形成半导体器件的栅极的方法 |
CN102361011B (zh) * | 2008-06-11 | 2016-06-22 | 美格纳半导体有限会社 | 形成半导体器件的栅极的方法 |
CN102330089A (zh) * | 2010-07-14 | 2012-01-25 | 中国科学院微电子研究所 | 硅片打孔系统及方法 |
CN102330089B (zh) * | 2010-07-14 | 2013-07-17 | 中国科学院微电子研究所 | 硅片打孔系统及方法 |
CN102347349A (zh) * | 2010-07-28 | 2012-02-08 | 中国科学院微电子研究所 | 半导体结构及其制作方法 |
CN106990461A (zh) * | 2016-01-20 | 2017-07-28 | 上海新微技术研发中心有限公司 | 一种直角顶角硅阶梯光栅及其制造方法 |
CN106990461B (zh) * | 2016-01-20 | 2020-05-15 | 安徽中科米微电子技术有限公司 | 一种直角顶角硅阶梯光栅及其制造方法 |
CN109795977A (zh) * | 2017-11-16 | 2019-05-24 | 上海新微技术研发中心有限公司 | 一种在薄膜中形成斜面的方法 |
CN108447774A (zh) * | 2018-03-29 | 2018-08-24 | 睿力集成电路有限公司 | 同时去除热氧化膜和去除沉积氧化膜的方法及设备 |
Also Published As
Publication number | Publication date |
---|---|
KR20060050643A (ko) | 2006-05-19 |
TWI279859B (en) | 2007-04-21 |
US7439183B2 (en) | 2008-10-21 |
JP2006066726A (ja) | 2006-03-09 |
CN100452345C (zh) | 2009-01-14 |
US20060046487A1 (en) | 2006-03-02 |
KR100693237B1 (ko) | 2007-03-12 |
TW200620460A (en) | 2006-06-16 |
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