CN1197132C - 在栅极蚀刻处理后用湿式化学方法去除氧氮化硅材料 - Google Patents

在栅极蚀刻处理后用湿式化学方法去除氧氮化硅材料 Download PDF

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CN1197132C
CN1197132C CNB008051232A CN00805123A CN1197132C CN 1197132 C CN1197132 C CN 1197132C CN B008051232 A CNB008051232 A CN B008051232A CN 00805123 A CN00805123 A CN 00805123A CN 1197132 C CN1197132 C CN 1197132C
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Abstract

提出一种用于形成晶体管栅极结构(41，42)的方法。形成栅极氧化物层。在栅极氧化物层(41)上淀积栅极材料(42)。在栅极材料(42)上淀积氧氮化硅层(43)。蚀刻氧氮化硅层(43)、栅极材料(42)以及栅极氧化物层(41)以形成栅极结构(41，42)。在栅极结构(41，42)的顶部留有氧氮化硅区(43)。进行湿式化学处理以从栅极结构(41，42)的顶部去掉氧氮化硅区(43)。在完成湿式化学处理之后，在栅极结构(41，42)周围形成隔离物(61，62)。

Description

在栅极蚀刻处理后用湿式化学方法去除氧氮化硅材料
技术领域
本发明涉及半导体器件的处理，更具体地说，涉及在栅极蚀刻处理后用湿式化学方法去除氧氮化硅材料。
背景技术
在集成电路的工艺流程中，形成栅极图案的步骤被证明是最关键的步骤。为提高光刻形成图案的能力，可事先淀积270埃()的氧氮化硅(SiON)的无机底部消反射涂层(BARC)。但是，在可形成金属硅化物之前，必须从栅极叠层的顶部去掉这个SiON层。留下的任何SiON会极大地妨碍低表面电阻硅化物的均匀形成。
在先有技术中，作为间隔物蚀刻的一部分去掉SiON层。间隔物蚀刻法对均厚淀积的介质薄膜进行蚀刻以形成隔离物，借助其来隔开轻掺杂漏区(LDD)和源/漏区。在形成隔离物之后，进行过腐蚀以去掉SiON层。这种过腐蚀一般是在具有气体如CF4、CHF3和Ar的介质电蚀刻器中进行的。但是，这种过腐蚀导致几个不希望有的结果：硅沟道隔离氧化物的损失，对扩散硅的不希望有的蚀刻以及隔离物的凹进。
发明内容
按照本发明的最佳实施例，提出一种用于形成晶体管栅极结构的方法。
本发明提供了一种形成晶体管栅极结构的方法，它包括以下步骤：(a)形成栅极氧化物层；(b)在所述栅极氧化物层上淀积栅极材料层；(c1)在所述栅极材料层上淀积氧氮化硅的消反射涂层；(c2)使用标准的光刻技术，从上述所得的各个层形成栅极区的图案；(d)蚀刻所述氧氮化硅的消反射涂层、所述栅极材料层以及所述栅极氧化物层以形成栅极结构，  在所述栅极结构的顶部留有氧氮化硅区；(e)进行湿式化学处理以从所述栅极结构的顶部去掉所述氧氮化硅区；以及(f)在进行所述湿式化学处理之后，在所述栅极结构周围形成隔离物。
其中，在步骤(b)中所述栅极材料层是非晶硅层或多晶硅层。
其中，在步骤(e)中所述湿式化学处理是热磷酸蚀刻或中性氧化物蚀刻。
其中，步骤(e)是在注入轻掺杂漏区之前进行的。
所述方法可以用于加工集成电路。
根据本发明，在进行湿式化学处理之后，在不需要过腐蚀的情况下在栅极结构周围形成常规的隔离物。
在本发明的最佳实施例中，栅极材料是非晶硅。另外，栅极材料可以是多晶硅、退火的非晶硅、或者其他类型的栅极材料。湿式化学处理是，例如，热磷酸蚀刻或者中性氧化物蚀刻(NOE)。NOE是一种含有乙二醇、氟化铵、水和表面活化剂的溶液。湿式化学处理可以在注入轻掺杂漏区之前或之后进行。
在栅极蚀刻之后、通过湿式剥离方法、选择性地去掉栅极叠层SiON层(不是作为隔离物过腐蚀的一部分)减小了沟道氧化物损失、扩散硅的蚀刻、以及隔离物的凹进。湿式剥离方法选择性地蚀刻SiON层，而使晶片的剩余部分，最重要的是使栅极氧化物(如热氧化物)未改变。在去掉SiON层的情况下，隔离介质直接淀积在栅极材料上。然后，用隔离物蚀刻，可以去掉SiON过蚀刻步骤，消除与之相关的不希望有的影响。
附图说明
图1是说明按照本发明的最佳实施例的半导体工艺的简化流程图。
图2、3、4、5、6、7、8、9和10说明按照本发明最佳实施例的在图1中描述的半导体工艺。
具体实施方式
图1是按照本发明的最佳实施例的半导体加工的简化流程图。在步骤11中，在半导体晶片的衬底上形成缓冲(衬垫)氧化物层。例如，通过硅的热氧化产生氧化物来形成缓冲氧化物层。缓冲氧化物层厚为例如200埃()。在步骤12中，在缓冲氧化物层的顶部形成氮化物层。例如，通过低压化学汽相淀积(LPCVD，SiH2Cl2+NH3二氯甲硅烷/氨)形成氮化物层。氮化物层厚为例如2000埃()。在步骤13，通过干蚀刻处理使氮化物和缓冲氧化物形成图案以确定沟道区。例如，用湿化学品如硫酸和双氧水来清洗沟道区。清洗一般以旋转-冲洗-干燥(SRD)结束。
图2说明完成步骤13后的结果。在图2中，在硅衬底30的顶部，在缓冲氧化物层的一些部分31上覆盖氮化物层的部分32。
在步骤14中，通过例如对硅晶片进行干蚀刻形成沟道。干蚀刻可以是蚀刻硅并且弄平侧壁断面的一个或一个以上的步骤。图3说明步骤14完成的结果。在图3中，表示在硅衬底30中蚀刻的沟道33。例如，沟道33宽为0.5微米，而且延伸到衬底30的表面以下0.5微米。
在步骤15中，通过化学汽相淀积(CVD)用填充氧化物来填充沟道，使得对于平均沟道宽度，实现沟道与氮化物掩模之间的局部平面化。例如，CVD氧化物延伸到氮化物层的上表面以上0.7微米。图4说明步骤15完成的结果。在图4中，填充氧化物35已经填充了(图3中所示的)沟道33。例如，填充氧化物35延伸到氮化物层32的上表面以上0.7微米。
在步骤16中，把填充氧化物蚀刻到刚刚在衬底的表面以上的水平。例如通过化学机械抛光(CMP)处理与湿蚀刻的结合来完成这种蚀刻。在衬底表面上留下的填充氧化物的量是这样的，以便将来的处理步骤会去除/蚀刻剩余的填充氧化物，使得保留的填充氧化物会与栅极氧化物的表面找平、或者略高于栅极氧化物的表面。
图5说明步骤16完成的结果。在图5中，已经把填充氧化物35蚀刻到刚刚在缓冲氧化物层31的上表面以上的水平。例如，填充氧化物35延伸到缓冲层31的上表面以上800。
在步骤17中，例如，通过使用“热”磷酸溶液的湿蚀刻、把氮化物剥离。图6中表示出所述结果。在图6中，去掉了(图5中所示的)氮化物层32。
虽然为形成隔离结构已经使用浅沟槽隔离(STI)来形成场氧化物，但是也可以使用其他技术。例如，常常用硅的局部氧化(LOCOS)工艺来形成场氧化物区域。在LOCOS工艺中，形成衬垫氧化物层。在衬垫氧化物的上面，形成氮化物层。将氮化物形成图案并蚀刻。在衬底上已经蚀刻了氮化物而露出衬底的位置上，生长场氧化物。然后，去掉氮化物和衬垫氧化物。但是，STI比传统的LOCOS工艺有各种优势。例如，STI考虑到隔离结构的平面化。这导致在确定晶体管的栅极叠层时对关键尺寸(CD)的更好控制。在确定栅极叠层时对CD的更好控制导致在确定栅极叠层之后发生的进一部处理步骤中对CD的更好控制。
在步骤18中，在衬底上，例如通过热生长，形成适当的栅极氧化物层。例如，栅极氧化物层的厚度大约为54()。在形成栅极氧化物层之后，在步骤19中，淀积非晶硅层。另外，可以淀积多晶硅层、退火非晶硅层或者其他类型的栅极材料层，代替非晶硅层。
在步骤20中，淀积270的氧氮化硅(SiON)的无机底部消反射涂层(BARC)。
在步骤21中，使用标准的光刻技术，分别从非晶硅层与二氧化硅层形成多晶硅栅极区的图案。氧氮化硅的无机底部消反射涂层起到提高光刻形成图案的能力的作用。在图7中表示出形成图案与蚀刻的结果，其中表示了氧化物区41、非晶体多晶硅区42和SiON区43的栅极叠层。如从图7中可以看到的，SiON区43保留在新形成的非晶体多晶硅(栅极)区的顶部，而栅极氧化物区41的两侧是暴露的。
在发生于执行常规的轻掺杂漏区(LDD)阶段之前或者之后的步骤22中，使用湿式化学方法去掉一部分、但最好是全部的SiON区。因为湿式处理本身是各向同性的，所以有侧面蚀刻栅极氧化物区41的潜力。因此，湿式剥离处理必须选择性地蚀刻SiON层，而使栅极氧化物区41基本上不受影响。
在本发明的最佳实施例中，在湿式剥离处理中使用热磷酸。在热磷酸处理中，已经测量了SiON和热氧化物的腐蚀率，对于SiON为59.3/min，对于热氧化物层为1.62/min。这给出SiON对热氧化物的36.6的选择性，以及在完全去掉SiON区43的情况下、栅极氧化物区41中低于10的横向损失。
除了热磷酸，许多不同湿式化学品也是可能的选择，但是应该在此选择性的基础上对其评价。例如，可以使用中性氧化物蚀刻(NOE)。在NOE处理中，已经测量了SiON和热氧化物的腐蚀率，分别为12.5-17/min和2.5-4.5/min。腐蚀率取决于NOE液所吸收的水分的量。这表明SiON对热氧化物的选择性在2.8至6.8的范围内。这意味着，到去掉整个270SiON区43的时候，在栅极氧化物区41中有60的横向损失。
图8表示SiON区43被去掉了。在常规的轻掺杂漏区(LDD)阶段(如果其尚未被执行)被执行之后，形成隔离物。
在步骤23中，在去掉了SiON区43的情况下，直接在非晶硅区42上淀积隔离介质。例如，图9表示直接淀积在非晶硅区42上的隔离介质层51。隔离介质层51是例如由氮化物或某些其他介质材料构成的。
在由图10说明的步骤24中，对隔离介质层进行蚀刻以形成隔离物61和隔离物62。
在形成隔离物61和62之后，继续常规的处理。例如，通过屏蔽氧化物层进行n+和p+掺杂物的注入。注入之后接着是，例如在大约1000摄氏度下快速热退火(RTA)约30秒，以激活注入的杂质。前端处理也把非晶硅层的晶格改成了多晶硅。
然后通过常规方式在源/漏区上形成金属硅化物区。
尽管上面的讨论给出了处理步骤的概述，但是，如本专业的技术人员会理解的，对不同类型的器件的处理在某些细节上可能不同，这取决于所用的工艺类型(例如，它是CMOS还是NMOS工艺)。
上述讨论仅公开和描述了本发明的示例性的方法和实施例。如本专业的技术人员将会理解的，本发明可以用其他特定形式来实施，而不违背其精神或基本特征。因此，本发明的公开意在说明、而非限定本发明的范围，其范围由以下权利要求书给出。

Claims (7)

1.一种形成晶体管栅极结构(41，42)的方法，它包括以下步骤：
(a)形成栅极氧化物层(41)；
(b)在所述栅极氧化物层(41)上淀积栅极材料层(42)；
(c1)在所述栅极材料层(42)上淀积氧氮化硅的消反射涂层(43)；
(c2)使用标准的光刻技术，从上述所得的各个层形成栅极区的图案；
(d)蚀刻所述氧氮化硅的消反射涂层(43)、所述栅极材料层(42)以及所述栅极氧化物层(41)以形成栅极结构(41，42)，在所述栅极结构(41，42)的顶部留有氧氮化硅区(43)；
(e)进行湿式化学处理以从所述栅极结构(41，42)的顶部去掉所述氧氮化硅区(43)；以及
(f)在进行所述湿式化学处理之后，在所述栅极结构(41，42)周围形成隔离物(61，62)。
2.权利要求1的方法，其特征在于：在步骤(b)中所述栅极材料层(42)是非晶硅层。
3.权利要求1的方法，其特征在于：在步骤(b)中所述栅极材料层(42)是多晶硅层。
4.权利要求1的方法，其特征在于：在步骤(e)中所述湿式化学处理是热磷酸蚀刻。
5.权利要求1的方法，其特征在于：在步骤(e)中所述湿式化学处理是中性氧化物蚀刻。
6.权利要求1的方法，其特征在于：步骤(e)是在注入轻掺杂漏区之前进行的。
7.权利要求1的的方法，其特征在于所述方法用于加工集成电路。
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