CN1728394A - 半导体集成电路器件 - Google Patents
半导体集成电路器件 Download PDFInfo
- Publication number
- CN1728394A CN1728394A CNA2005100922772A CN200510092277A CN1728394A CN 1728394 A CN1728394 A CN 1728394A CN A2005100922772 A CNA2005100922772 A CN A2005100922772A CN 200510092277 A CN200510092277 A CN 200510092277A CN 1728394 A CN1728394 A CN 1728394A
- Authority
- CN
- China
- Prior art keywords
- channel mos
- semiconductor device
- type
- gate electrode
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims description 47
- 229920005591 polysilicon Polymers 0.000 claims description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021357 chromium silicide Inorganic materials 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 5
- 206010010144 Completed suicide Diseases 0.000 claims description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000003870 refractory metal Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004207225A JP2006032543A (ja) | 2004-07-14 | 2004-07-14 | 半導体集積回路装置 |
JP207225/04 | 2004-07-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1728394A true CN1728394A (zh) | 2006-02-01 |
CN100502017C CN100502017C (zh) | 2009-06-17 |
Family
ID=35731159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100922772A Expired - Fee Related CN100502017C (zh) | 2004-07-14 | 2005-07-14 | 半导体集成电路器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060022274A1 (zh) |
JP (1) | JP2006032543A (zh) |
KR (1) | KR20060050160A (zh) |
CN (1) | CN100502017C (zh) |
TW (1) | TW200614429A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104733393A (zh) * | 2013-12-23 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | 光罩式只读存储器的结构及制造方法 |
CN105575903A (zh) * | 2009-05-15 | 2016-05-11 | 格罗方德半导体公司 | 形成半导体装置的电阻结构的方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7470959B2 (en) * | 2003-11-04 | 2008-12-30 | International Business Machines Corporation | Integrated circuit structures for preventing charging damage |
JP4987309B2 (ja) * | 2005-02-04 | 2012-07-25 | セイコーインスツル株式会社 | 半導体集積回路装置とその製造方法 |
JP2007165492A (ja) * | 2005-12-13 | 2007-06-28 | Seiko Instruments Inc | 半導体集積回路装置 |
US20070146564A1 (en) * | 2005-12-23 | 2007-06-28 | Innolux Display Corp. | ESD protection circuit and driving circuit for LCD |
US20090039431A1 (en) * | 2007-08-06 | 2009-02-12 | Hiroaki Takasu | Semiconductor device |
US8395216B2 (en) * | 2009-10-16 | 2013-03-12 | Texas Instruments Incorporated | Method for using hybrid orientation technology (HOT) in conjunction with selective epitaxy to form semiconductor devices with regions of different electron and hole mobilities and related apparatus |
CN102110649A (zh) * | 2009-12-28 | 2011-06-29 | 北大方正集团有限公司 | 一种改善铝栅互补金属氧化物半导体静态电流失效的方法 |
JP5546298B2 (ja) * | 2010-03-15 | 2014-07-09 | セイコーインスツル株式会社 | 半導体回路装置の製造方法 |
BR112013025991A2 (pt) | 2011-04-08 | 2016-12-20 | Auckland Uniservices Ltd | sistema, método, e controlador de sistema de gerenciamento de fonte de alimentação de energia elétrica, e, aparelho |
JP2012253241A (ja) * | 2011-06-03 | 2012-12-20 | Sony Corp | 半導体集積回路およびその製造方法 |
WO2014038966A1 (en) * | 2012-09-06 | 2014-03-13 | Auckland Uniservices Limited | Local demand side power management for electric utility networks |
US9805990B2 (en) | 2015-06-26 | 2017-10-31 | Globalfoundries Inc. | FDSOI voltage reference |
CN106950775A (zh) * | 2017-05-16 | 2017-07-14 | 京东方科技集团股份有限公司 | 一种阵列基板和显示装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59161654A (ja) * | 1983-03-04 | 1984-09-12 | 松下精工株式会社 | 空冷ヒ−トポンプ式空気調和装置 |
US4759836A (en) * | 1987-08-12 | 1988-07-26 | Siliconix Incorporated | Ion implantation of thin film CrSi2 and SiC resistors |
JPH03105967A (ja) * | 1989-09-19 | 1991-05-02 | Nec Corp | 半導体装置の入出力保護回路 |
JPH04345064A (ja) * | 1991-05-22 | 1992-12-01 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH05235275A (ja) * | 1992-02-26 | 1993-09-10 | Nippon Precision Circuits Kk | 集積回路装置 |
JPH0722617A (ja) * | 1993-06-23 | 1995-01-24 | Nippon Motorola Ltd | 半導体集積回路装置の静電気破壊保護回路 |
JPH08102498A (ja) * | 1994-09-30 | 1996-04-16 | Hitachi Ltd | 半導体装置 |
JP3717227B2 (ja) * | 1996-03-29 | 2005-11-16 | 株式会社ルネサステクノロジ | 入力/出力保護回路 |
US6034388A (en) * | 1998-05-15 | 2000-03-07 | International Business Machines Corporation | Depleted polysilicon circuit element and method for producing the same |
JPH11345886A (ja) * | 1998-06-02 | 1999-12-14 | Seiko Instruments Inc | 半導体装置の静電破壊防止回路 |
US6080630A (en) * | 1999-02-03 | 2000-06-27 | Advanced Micro Devices, Inc. | Method for forming a MOS device with self-compensating VT -implants |
JP3650281B2 (ja) * | 1999-05-07 | 2005-05-18 | セイコーインスツル株式会社 | 半導体装置 |
JP2001298157A (ja) * | 2000-04-14 | 2001-10-26 | Nec Corp | 保護回路及びこれを搭載した半導体集積回路 |
JP2001320018A (ja) * | 2000-05-08 | 2001-11-16 | Seiko Instruments Inc | 半導体装置 |
JP4124553B2 (ja) * | 2000-08-04 | 2008-07-23 | セイコーインスツル株式会社 | 半導体装置 |
JP2002124641A (ja) * | 2000-10-13 | 2002-04-26 | Seiko Instruments Inc | 半導体装置 |
US6552401B1 (en) * | 2000-11-27 | 2003-04-22 | Micron Technology | Use of gate electrode workfunction to improve DRAM refresh |
KR100456526B1 (ko) * | 2001-05-22 | 2004-11-09 | 삼성전자주식회사 | 식각저지막을 갖는 에스오아이 기판, 그 제조방법, 그위에 제작된 에스오아이 집적회로 및 그것을 사용하여에스오아이 집적회로를 제조하는 방법 |
JP2004023005A (ja) * | 2002-06-19 | 2004-01-22 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP4094379B2 (ja) * | 2002-08-27 | 2008-06-04 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
US6955958B2 (en) * | 2002-12-30 | 2005-10-18 | Dongbuanam Semiconductor, Inc. | Method of manufacturing a semiconductor device |
-
2004
- 2004-07-14 JP JP2004207225A patent/JP2006032543A/ja active Pending
-
2005
- 2005-07-11 US US11/178,744 patent/US20060022274A1/en not_active Abandoned
- 2005-07-13 TW TW094123775A patent/TW200614429A/zh unknown
- 2005-07-14 KR KR1020050063622A patent/KR20060050160A/ko not_active Application Discontinuation
- 2005-07-14 CN CNB2005100922772A patent/CN100502017C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105575903A (zh) * | 2009-05-15 | 2016-05-11 | 格罗方德半导体公司 | 形成半导体装置的电阻结构的方法 |
CN104733393A (zh) * | 2013-12-23 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | 光罩式只读存储器的结构及制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20060050160A (ko) | 2006-05-19 |
TW200614429A (en) | 2006-05-01 |
CN100502017C (zh) | 2009-06-17 |
JP2006032543A (ja) | 2006-02-02 |
US20060022274A1 (en) | 2006-02-02 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160309 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090617 |
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CF01 | Termination of patent right due to non-payment of annual fee |