CN1714406A - 存储设备和存取设备 - Google Patents
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Abstract
简而言之,根据本发明的实施例,提供了一种存储器(100)。该存储器(100)可以包括存储元件(130)和被耦合到该存储元件(130)的第一存取设备(120),其中,该第一存取设备(120)包含第一硫族化物材料(940)。该存储器(100)可以进一步包括被耦合到该第一存取设备(120)的第二存取设备(125),其中,该第二存取设备(125)包含第二硫族化物材料(920)。
Description
背景
相变存储设备将相变材料(即可以在一般的非晶体状态与一般的结晶体状态之间加以电转换的材料)用于电子存储应用。一种类型的存储元件利用相变材料;在一项应用中,该相变材料可以在一般的非晶体与一般的结晶体局部顺序的结构状态之间、或在跨越完全非晶体状态与完全结晶体状态之间的整个光谱的局部顺序的不同的可检测状态之间加以电转换。这些相变材料的该状态也是非易失性的,体现在:当被设置处于表示一电阻值的结晶体、半结晶体、非晶体或半非晶体状态时,那个值被保留,直到被另一个编程事件更改为止,因为那个值表示该材料的相态或物理状态(例如,结晶体的或非晶体的)。
晶体管或二极管可以被连接到该相变材料,并可以用作选择设备,以便在编程操作或读操作期间存取该相变材料。该晶体管或二极管通常被形成在硅单一晶体基层的顶面的里面或上面。晶体管可以占据该存储器芯片的相对大的部分,所以,可以增加该存储单元尺寸,从而对存储容量和成本/存储器芯片的位产生不利的影响。
附图简述
图1是示意图,展示了根据本发明的另一个实施例的存储器;以及,
图2是根据本发明的实施例的图17中所展示的该存储器的一部分的横截面视图;
图3展示了存储单元的电流-电压特征;以及,
图4展示了选择设备的电流-电压特征。
详细说明
选择设备120可以被用来在存储元件130的编程或读取期间存取存储元件130。选择设备120可以作为开关来进行操作,该开关要么“关闭”,要么“打开”,这取决于跨越该存储单元而施加的电压势能数量。该关闭状态可能是实质上的不导电状态,该打开状态可能是实质上的导电状态。例如,选择设备120可以具有阈值电压;并且,如果跨选择设备120被施加比选择设备120的该阈值电压更小的电压势能,那么,选择设备120可以保持“关闭”或处于相对高的电阻状态,以便很少或没有电流通过该存储单元。作为选择,如果跨选择设备120被施加比选择设备120的该阈值电压更大的电压势能,那么,选择设备120可以“打开”(即,在相对低的电阻状态中进行操作),以便电流通过该存储单元。换言之,如果跨选择设备120被施加小于预定的电压势能(例如,该阈值电压),那么,选择设备120可以处于实质上的不导电状态。如果跨选择设备120被施加大于该预定的电压势能,那么,选择设备120可以处于实质上的导电状态。选择设备120也可以被称作“存取设备”、“隔离设备”或“开关”。
在一个实施例中,选择设备120可以包含开关材料(例如,硫族化物或用双向半导体的材料),并可以被称作“双向半导体器件阈值开关”,或只被称作“双向半导体器件开关”。选择设备120的该开关材料可能是处于被置于两个电极之间的实质上的非晶体状态的材料;通过预定电流或电压势能的施加,它可以在较高电阻“关闭”状态(例如,大于大约10兆欧)与相对较低电阻“打开”状态(例如,大约零欧姆)之间加以重复、可逆地转换。在这个实施例中,选择设备120可能是二终端设备,该二终端设备可以具有类似于处于该非晶体状态的相变存储元件的电流-电压(I-V)特征。但是,与相变存储元件不同的是,选择设备120的该开关材料可能不会更改相位。也就是说,选择设备120的该开关材料可能不是可编程材料,并且,结果,选择设备120可能不是能够存储信息的存储设备。例如,选择设备120的该开关材料可以永久地保持是非晶体的,并且,该I-V特征可以在整个的该操作寿命期间保持不变。
图1是示意图,展示了存储器100的实施例。在这个实施例中,存储单元111-119每个包括选择设备120、选择设备125和存储元件130。在这个实施例中,可以减少总的快速返回,以允许使用较低阈值存储元件。例如,如果关于那一对双向半导体器件开关的总VTH是大约2伏特,那么,通过适当地选择该开关材料厚度,每个开关的个别的VTH可以是大约1伏特。如果每个开关的VH是(例如)0.8伏特,那么,若使用单一设备,则可以将该快速返回从大约1.2伏特减少到总共大约0.4伏特。开关设备的这种堆叠串联设置可以减少“在读取期间干扰位”的趋向。这种堆栈可以由与该存储元件串联的一个开关、两个开关或多个开关组成,它们都被放置在该行线路与列线路之间,从而可协助可靠的存储选择和操作。
如所展示的,存储元件130以及选择设备120和125按串行布置来加以连接。在一个实施例中,选择设备120和125可能是用双向半导体器件开关,存储元件130可能是用双向半导体器件存储器。
参考图2,根据本发明的另一个实施例来展示存储器100的存储单元(例如,115)的实施例。存储单元115可以包含基层240、覆盖在基层240上面的绝缘材料260、以及覆盖在绝缘材料260上面的导电材料270。导电材料270可能是地址线(例如,行线路152)。在导电材料270以上,可以在绝缘材料280的各个部分之间形成电极340。在电极340上,可以沉淀存储材料350、电极材料360、开关材料920、电极材料930、开关材料940、电极材料950和导电材料980的顺序层,以形成垂直的存储单元结构。导电材料980可能是地址线(例如,列线路142)。
在图2所展示的该实施例中,在存储元件130上形成选择设备125和120,以形成被串连耦合的薄膜垂直结构或垂直堆栈。在另一种实施例中,可以在选择设备120和125以上形成存储元件130,或者,可以在选择设备120与125之间形成存储元件130,以形成被串连耦合的薄膜垂直结构。在图2所展示的该实施例中,可以使用薄膜材料来形成选择设备120和125以及存储元件130;并且,该垂直堆栈可以被称作“薄膜垂直堆栈”。
在图2所展示的该实施例中,存储材料350以及电极340和360可以形成存储元件130。存储材料350可能是用双向半导体材料或硫族化物材料,并且可以被称作“双向半导体器件存储器”。开关材料920以及电极360和930可以形成选择设备125。可以使用被用来形成这里所描述的开关材料220的类似的材料和类似的制造技术,来形成开关材料920。开关材料940以及电极930和950可以形成选择设备120。可以使用被用来形成这里所描述的开关材料220的类似的材料和类似的制造技术,来形成开关材料940。在替代实施例中,开关材料920和940可以由相同的材料或不同的材料构成。例如,在一个实施例中,开关材料920可以由硫族化物材料构成,开关材料940可以由另一种不同的硫族化物材料构成。
在一个实施例中,选择设备120和125可能是用双向半导体器件开关,存储元件130可能是双向半导体器件存储器,并且,存储单元115可以被称作“双向半导体器件存储单元”。如上所述,图4中示出关于选择设备120的I-V特征的例子。选择设备125可以具有类似于图4中所展示的特征的I-V特征。
参考图3,示出存储单元115的I-V特征的例子(可以包括这个实施例中的存储元件130以及选择设备120和125)。存储单元115的该维持电压(被标注为VH)可以产生于选择设备120和125以及存储元件130的这些维持电压。存储元件115的该阈值电压可以等同于存储元件130以及选择设备120和125的这些组合阈值电压。
如从这里的讨论中可以理解的,选择设备或双向半导体器件开关的该阈值电压可以由这个双向半导体器件开关的该开关材料的厚度或合金组成成分来确定,并且,双向半导体器件开关的该维持电压可以由接触这个双向半导体器件开关的该开关材料的这些电极的组成成分来确定。相应地,在一个实施例中,通过减小该开关材料的厚度并使用特定类型的电极,可以减小该快速返回电压(即双向半导体器件开关的该阈值电压与维持电压之间的电压差)。
例如,参考图2中所展示的选择设备120,如果电极930和950是碳层,并且如果开关材料940的厚度是大约200,那么,选择设备120的该维持电压可能是大约1伏特,选择设备120的该阈值电压可能是大约1.2伏特。在这个例子中,该快速返回电压可能是大约0.2伏特——它是选择设备120的该维持电压与阈值电压之间的差。
在图2所展示的该实施例中,存储单元115可以包括被串连耦合到双向半导体器件存储器的两个双向半导体器件开关,以便当需要较高的开关电压和维持电压时,减小存储单元的该维持电压与该阈值电压之间的电压差。换言之,两个双向半导体器件开关可以被串连耦合到双向半导体器件存储器,以减少存储单元的“快速返回”,即,当需要较高的开关电压和维持电压时,减小双向半导体的存储单元的该阈值电压与维持电压之间的电压差。
在一个实施例中,电极360、930和950可能是碳,开关材料920的厚度可能是大约200,并且,开关材料940的厚度可能是大约200。在这个实施例中,选择设备120的该阈值电压可能是大约1.2伏特,并且,选择设备120的该维持电压可能是大约1伏特。选择设备125的该阈值电压可能是大约1.2伏特,选择设备125的该维持电压可能是大约1伏特。如果复位/设置存储元件130的该阈值电压是大约0.8/0.0伏特,那么,存储单元115的该阈值电压对于处于复位状态和设置状态的存储单元115而言可能是大约3.2/2.4伏特——它是存储元件130以及选择设备120和125的这些组合阈值电压。也就是说,可以跨越存储单元115来施加比大约3.2伏特更大的电压势能,以便“打开”选择设备120和125并且将电流传导通过存储单元115。通过将比大约3.2伏特更大的电压势能施加于列线路142并将大约零伏特的电压势能施加于行线路152,可以跨存储单元115来施加比大约3.2伏特更大的电压。
在这个例子中,为了对被选择的存储单元(例如,存储单元115)进行编程,可以将大约1.8伏特的电压施加于未经选择的列和未经选择的行线路(例如,线路141、143、151和153)。可以将比大约3.2伏特更大的电压施加于被选择的列线路(例如,142),并且,可以将零伏特施加于被选择的行线路(例如,行线路152)。在这个例子中,在选择设备120和125“打开”之后,由于快速返回,可以根据该单元的存储状态和该列所提供的电流,来将跨存储单元115的该电压降从大约3.2伏特减少到大约2.0-2.8伏特。然后,通过迫使电流通过存储单元115,同时,保证“该被选择的列线路保留在偏压大约1.8伏特的这些未经选择的行线路的大约2.4伏特以内,以便未经选择的存储单元不被干扰”,可以将信息存储在存储元件130中。也就是说,该列可能不被允许在编程期间高于大约4.2伏特。
图3可以被用来用图表展示这个例子——其中,关于该充满的存储单元(所有3个部件被一起采用),VTH分别对于复位状态和设置状态而言是3.2/2.4伏特,VH是2.8伏特。通过存储单元115的该电流接近零安培,直到超过(例如)大约3.2或2.4伏特的该阈值电压VTH为止,这取决于该存储单元是否分别处于复位或设置状态。然后,随着该电流的增加,跨越存储单元115的该电压下降到(关于复位位)或攀升到(关于置位)(例如)大约2.8伏特的该维持电压VH。
为了读取被存储在这个被选择的存储单元中的该信息的该值,在这个例子中,可以跨越存储单元115来施加大约2.8伏特的电压。可以感测存储元件130的该电阻,以确定:存储元件130是否处于低电阻结晶体状态,即“设置”状态(例如,小于大约10,000欧姆),或者,存储元件130是否处于高电阻非晶体状态,即“复位”状态(例如,大于大约10,000欧姆)。
在另一个实施例中,为了读取被存储在这个被选择的存储单元中的该信息的该值,通过将2.8伏特施加于该被选择的列、将零伏特施加于该被选择的行并将1.4伏特施加于所有其他未经选择的行和列,可以跨存储单元115来施加大约2.8伏特的电压。可以感测从该被选择的列到该被选择的行的该电阻,以确定:存储元件130是否处于低电阻结晶体状态,即“设置”状态,或者,存储元件130是否处于高电阻非晶体状态,即“复位”状态。在这个实施例中,这些串联选择设备可能不为复位状态的情况而“打开”,这样,也提供了该被选择的列与被选择的行之间的高电阻。
应该理解:以上例子不是本发明的限制。通过改变开关材料920和940的厚度以及电极360、930和950的这些组成成分,可以实现其他维持电压和阈值电压,以改变存储单元的快速返回。“减少存储单元的快速返回”的一个优点是:可以减少通过该存储单元的电容性位移电流,从而在读取的同时,减少了使“干扰位”的趋向处于不同的状态。
在其他实施例中,图2中所展示的存储单元115可以按不同的方式被排列,并且包括额外的层和结构。例如,可能需要形成隔离结构、阻挡层、外围电路(例如,寻址电路)等。而该存储单元可能是由不同的电流或极性来编程的具有不同的相位的铁电体或铁磁体材料,并且,当被编程为这些不同的状态时,这些不同的相位会导致不同的阻抗。另一种方式,该存储单元可能是得益于小型存取设备的任何其他的材料或设备。应该理解:这些元件的缺乏不是对本发明的范围的限制。
这里已展示和描述本发明的某些特点,但精通该技术领域的人现在将会想到有许多修改、替换、变化和等效物。所以,将会理解:所附权利要求书意在包括处于本发明的真实精神以内的所有这类修改和变化。
Claims (25)
1.一种装置,其特征在于包括:
存储元件;
被耦合到该存储元件的第一存取设备,其中,该第一存取设备包含第一硫族化物材料;以及,
被耦合到该第一存取设备的第二存取设备,其中,该第二存取设备包含第二硫族化物材料。
2.权利要求1的装置,其特征在于:进一步包括基层上的垂直结构,其中,该垂直结构包括串连彼此耦合的该第一存取设备、该第二存取设备和该存储元件。
3.权利要求1的装置,其特征在于:其中,使用薄膜材料来形成该第一存取设备、该第二存取设备和该存储元件。
4.权利要求1的装置,其特征在于:其中,该第二存取设备在该第一存取设备上,并且,该第一存取设备在该存储元件上。
5.权利要求1的装置,其特征在于:其中,该第一选择设备包括开关材料,该开关材料处于实质上的非晶体状态,并且,通过施加一预定电压或电流,该开关材料适合在较高的电阻状态与相对较低的电阻状态之间加以重复、可逆的转换。
6.权利要求1的装置,其特征在于:其中,该存储元件包含相变材料,通过将电流施加于该相变材料,该相变材料能够被编程为至少两个存储状态之一,以改变实质上的结晶体状态与实质上的非晶体状态之间的该相变材料的该相位;其中,处于该实质上的非晶体状态的该相变材料的电阻大于处于该实质上的结晶体状态的该相变材料的该电阻。
7.权利要求1的装置,其特征在于:其中,该存储元件包含基层上的存储材料;并且,其中,该第一硫族化物材料在该存储材料上,该第二硫族化物材料在该第一硫族化物材料上。
8.权利要求7的装置,其特征在于:进一步包括:
存储材料与该第一硫族化物材料之间的第一电极;以及,
该第一硫族化物材料与该第二硫族化物材料之间的第二电极。
9.权利要求8的装置,其特征在于:其中,该第一电极和该第二电极是碳薄膜。
10.权利要求7的装置,其特征在于:其中,该第一硫族化物材料、该第二硫族化物材料和该存储材料每个包含碲。
11.权利要求7的装置,其特征在于:其中,该第一硫族化物材料是从一组中选择的材料,该组包括硅、碲、砷、锗及其组合。
12.权利要求7的装置,其特征在于:其中,该存储材料是碲、锑、锗合金。
13.一种装置,其特征在于包括:
双向半导体器件第一开关;
双向半导体器件第二开关,它被耦合到该双向半导体器件第一开关;以及,
存储元件,它被耦合到该双向半导体器件第二开关。
14.权利要求13的装置,其特征在于:其中,使用薄膜材料来形成该存储元件、该双向半导体器件第一开关、以及该双向半导体器件第二开关。
15.权利要求13的装置,其特征在于:进一步包括基层上的垂直结构,其中,该垂直结构包括串连彼此耦合的该双向半导体器件第一开关、该双向半导体器件第二开关、以及该存储元件。
16.一种装置,其特征在于包括:
基层上的存储材料;
该存储材料上的第一电极;
该第一电极上的第一硫族化物材料;
该第一硫族化物材料上的第二电极;以及,
该第二电极上的第二硫族化物材料。
17.权利要求16的装置,其特征在于:其中,该存储材料、该第一电极、该第一硫族化物材料、该第二电极和该第二硫族化物材料在该基层上形成垂直堆栈的各个部分。
18.权利要求16的装置,其特征在于:其中,该存储材料、该第一电极、该第一硫族化物材料、该第二电极和该第二硫族化物材料每个是薄膜材料。
19.一种装置,其特征在于包括:
具有维持电压的存储单元,其中,该存储单元包括:
存储元件;以及,
至少两个被串连耦合的存取设备,它们被耦合到该存储元件,以增加该存储单元的该维持电压。
20.权利要求19的装置,其特征在于:
其中,该存储元件包括相变材料;以及,
其中,这两个被串连耦合的存取设备中的第一存取设备包括第一硫族化物材料,并且,其中,这两个被串连耦合的存取设备中的该第二存取设备包括第二硫族化物材料。
21.权利要求20的装置,其特征在于:其中,该第一硫族化物材料不同于该第二硫族化物材料。
22.权利要求19的装置,其特征在于:其中,使用薄膜材料来形成这至少两个被串连耦合的存取设备中的第一存取设备、这至少两个被串连耦合的存取设备中的第二存取设备、以及该存储元件。
23.一种系统,其特征在于包括:
处理器;
被耦合到该处理器的无线接口;以及,
被耦合到该处理器的存储器,该存储器包括:
存储元件;
被耦合到该存储元件的第一存取设备,其中,该第一存取设备包含第一硫族化物材料;以及,
被耦合到该第一存取设备的第二存取设备,其中,该第二存取设备包含第二硫族化物材料。
24.权利要求23的系统,其特征在于:其中,该存储元件包含基层上的存储材料;并且,其中,该第一硫族化物材料在该存储材料上,该第二硫族化物材料在该第一硫族化物材料上。
25.权利要求23的系统,其特征在于:其中,该存储器进一步包括基层上的垂直结构,其中,该垂直结构包括串连彼此耦合的该第一存取设备、该第二存取设备和该存储元件。
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102598139A (zh) * | 2009-07-13 | 2012-07-18 | 希捷科技有限公司 | 具有非欧姆选择层的非易失性存储单元 |
CN103368146A (zh) * | 2012-03-28 | 2013-10-23 | 株式会社半导体能源研究所 | 半导体装置 |
CN103794619A (zh) * | 2012-10-30 | 2014-05-14 | 爱思开海力士有限公司 | 可变电阻存储器件 |
CN105229786A (zh) * | 2013-06-03 | 2016-01-06 | 美光科技公司 | 热优化相变存储器单元及其制造方法 |
CN105244058A (zh) * | 2014-07-07 | 2016-01-13 | 科洛斯巴股份有限公司 | 使用选择器器件保持特性的非易失性存储器器件感测方法 |
CN107689799A (zh) * | 2011-05-31 | 2018-02-13 | 科洛斯巴股份有限公司 | 具有非线性元件的切换器件 |
US10211397B1 (en) | 2014-07-07 | 2019-02-19 | Crossbar, Inc. | Threshold voltage tuning for a volatile selection device |
US10541025B2 (en) | 2017-03-24 | 2020-01-21 | Crossbar, Inc. | Switching block configuration bit comprising a non-volatile memory cell |
US10910561B1 (en) | 2012-04-13 | 2021-02-02 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US10964388B2 (en) | 2014-03-11 | 2021-03-30 | Crossbar, Inc. | Selector device for two-terminal memory |
Families Citing this family (148)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7935951B2 (en) * | 1996-10-28 | 2011-05-03 | Ovonyx, Inc. | Composite chalcogenide materials and devices |
US7589343B2 (en) * | 2002-12-13 | 2009-09-15 | Intel Corporation | Memory and access device and method therefor |
JP4254293B2 (ja) * | 2003-03-25 | 2009-04-15 | 株式会社日立製作所 | 記憶装置 |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
US7236394B2 (en) * | 2003-06-18 | 2007-06-26 | Macronix International Co., Ltd. | Transistor-free random access memory |
US6914255B2 (en) * | 2003-08-04 | 2005-07-05 | Ovonyx, Inc. | Phase change access device for memories |
US7399655B2 (en) * | 2003-08-04 | 2008-07-15 | Ovonyx, Inc. | Damascene conductive line for contacting an underlying memory element |
US7308067B2 (en) * | 2003-08-04 | 2007-12-11 | Intel Corporation | Read bias scheme for phase change memories |
US7381611B2 (en) * | 2003-08-04 | 2008-06-03 | Intel Corporation | Multilayered phase change memory |
KR100505709B1 (ko) | 2003-09-08 | 2005-08-03 | 삼성전자주식회사 | 상 변화 메모리 장치의 파이어링 방법 및 효율적인파이어링을 수행할 수 있는 상 변화 메모리 장치 |
US6992369B2 (en) * | 2003-10-08 | 2006-01-31 | Ovonyx, Inc. | Programmable resistance memory element with threshold switching material |
US7005665B2 (en) * | 2004-03-18 | 2006-02-28 | International Business Machines Corporation | Phase change memory cell on silicon-on insulator substrate |
US6944041B1 (en) * | 2004-03-26 | 2005-09-13 | Bae Systems Information And Electronic Systems Integration, Inc. | Circuit for accessing a chalcogenide memory array |
WO2005096380A1 (en) | 2004-04-02 | 2005-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of the same |
US7038231B2 (en) * | 2004-04-30 | 2006-05-02 | International Business Machines Corporation | Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation |
US7323707B2 (en) * | 2004-06-30 | 2008-01-29 | Intel Corporation | Initializing phase change memories |
US7359231B2 (en) * | 2004-06-30 | 2008-04-15 | Intel Corporation | Providing current for phase change memories |
US6990017B1 (en) * | 2004-06-30 | 2006-01-24 | Intel Corporation | Accessing phase change memories |
US7190048B2 (en) * | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Resistance variable memory device and method of fabrication |
JP4367281B2 (ja) * | 2004-08-03 | 2009-11-18 | ソニー株式会社 | 演算回路 |
US20060056227A1 (en) * | 2004-09-10 | 2006-03-16 | Parkinson Ward D | One time programmable phase change memory |
US7646630B2 (en) * | 2004-11-08 | 2010-01-12 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
US7202493B2 (en) * | 2004-11-30 | 2007-04-10 | Macronix International Co., Inc. | Chalcogenide memory having a small active region |
TWI260764B (en) * | 2004-12-10 | 2006-08-21 | Macronix Int Co Ltd | Non-volatile memory cell and operating method thereof |
CN100386882C (zh) * | 2004-12-20 | 2008-05-07 | 旺宏电子股份有限公司 | 非易失性存储器及其操作方法 |
EP1677371A1 (en) | 2004-12-30 | 2006-07-05 | STMicroelectronics S.r.l. | Dual resistance heater for phase change devices and manufacturing method thereof |
US7307268B2 (en) * | 2005-01-19 | 2007-12-11 | Sandisk Corporation | Structure and method for biasing phase change memory array for reliable writing |
US20060169968A1 (en) * | 2005-02-01 | 2006-08-03 | Thomas Happ | Pillar phase change memory cell |
KR100707182B1 (ko) * | 2005-02-18 | 2007-04-13 | 삼성전자주식회사 | 상전이 메모리 소자 및 제조방법 |
US7317200B2 (en) | 2005-02-23 | 2008-01-08 | Micron Technology, Inc. | SnSe-based limited reprogrammable cell |
US7643327B2 (en) * | 2005-03-07 | 2010-01-05 | Nxp B.V. | Driving a memory matrix of resistance hysteresis elements |
JP2008533634A (ja) * | 2005-03-09 | 2008-08-21 | エヌエックスピー ビー ヴィ | 抵抗ヒステリシス素子を備えるメモリマトリックスの制御 |
US7495944B2 (en) * | 2005-03-30 | 2009-02-24 | Ovonyx, Inc. | Reading phase change memories |
US7453715B2 (en) * | 2005-03-30 | 2008-11-18 | Ovonyx, Inc. | Reading a phase change memory |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
US8116159B2 (en) * | 2005-03-30 | 2012-02-14 | Ovonyx, Inc. | Using a bit specific reference level to read a resistive memory |
US7233177B2 (en) | 2005-04-04 | 2007-06-19 | International Business Machines Corporation | Precision tuning of a phase-change resistive element |
EP1710324B1 (en) * | 2005-04-08 | 2008-12-03 | STMicroelectronics S.r.l. | PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device |
US8653495B2 (en) | 2005-04-11 | 2014-02-18 | Micron Technology, Inc. | Heating phase change material |
US7787280B2 (en) * | 2005-04-12 | 2010-08-31 | Panasonic Corporation | Electric element, memory device, and semiconductor integrated circuit |
US7408240B2 (en) * | 2005-05-02 | 2008-08-05 | Infineon Technologies Ag | Memory device |
US8513768B2 (en) * | 2005-05-09 | 2013-08-20 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US9911743B2 (en) | 2005-05-09 | 2018-03-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8013363B2 (en) * | 2005-05-09 | 2011-09-06 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US8217490B2 (en) * | 2005-05-09 | 2012-07-10 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7782650B2 (en) * | 2005-05-09 | 2010-08-24 | Nantero, Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US7479654B2 (en) | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
US9196615B2 (en) * | 2005-05-09 | 2015-11-24 | Nantero Inc. | Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
US20060289848A1 (en) * | 2005-06-28 | 2006-12-28 | Dennison Charles H | Reducing oxidation of phase change memory electrodes |
US7381981B2 (en) * | 2005-07-29 | 2008-06-03 | International Business Machines Corporation | Phase-change TaN resistor based triple-state/multi-state read only memory |
KR100665227B1 (ko) * | 2005-10-18 | 2007-01-09 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
US8188454B2 (en) * | 2005-10-28 | 2012-05-29 | Ovonyx, Inc. | Forming a phase change memory with an ovonic threshold switch |
US20070171705A1 (en) * | 2005-12-15 | 2007-07-26 | Parkinson Ward D | Writing phase change memories |
US7692272B2 (en) * | 2006-01-19 | 2010-04-06 | Elpida Memory, Inc. | Electrically rewritable non-volatile memory element and method of manufacturing the same |
US7345899B2 (en) * | 2006-04-07 | 2008-03-18 | Infineon Technologies Ag | Memory having storage locations within a common volume of phase change material |
US7391664B2 (en) * | 2006-04-27 | 2008-06-24 | Ovonyx, Inc. | Page mode access for non-volatile memory arrays |
KR100871880B1 (ko) * | 2006-05-30 | 2008-12-03 | 삼성전자주식회사 | 상 변화 메모리 장치의 메모리 셀 내의 상 변화 물질의일부를 리셋하기 위한 리셋 전류를 감소시키는 방법 및 상변화 메모리 장치 |
US20070279974A1 (en) * | 2006-06-06 | 2007-12-06 | Dennison Charles H | Forming heaters for phase change memories with select devices |
US7492630B2 (en) * | 2006-07-31 | 2009-02-17 | Sandisk 3D Llc | Systems for reverse bias trim operations in non-volatile memory |
US7719874B2 (en) * | 2006-07-31 | 2010-05-18 | Sandisk 3D Llc | Systems for controlled pulse operations in non-volatile memory |
US7499304B2 (en) * | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | Systems for high bandwidth one time field-programmable memory |
US7495947B2 (en) * | 2006-07-31 | 2009-02-24 | Sandisk 3D Llc | Reverse bias trim operations in non-volatile memory |
US7522448B2 (en) * | 2006-07-31 | 2009-04-21 | Sandisk 3D Llc | Controlled pulse operations in non-volatile memory |
US7499355B2 (en) * | 2006-07-31 | 2009-03-03 | Sandisk 3D Llc | High bandwidth one time field-programmable memory |
JP2008085204A (ja) * | 2006-09-28 | 2008-04-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US7684225B2 (en) * | 2006-10-13 | 2010-03-23 | Ovonyx, Inc. | Sequential and video access for non-volatile memory arrays |
US7924608B2 (en) * | 2006-10-19 | 2011-04-12 | Boise State University | Forced ion migration for chalcogenide phase change memory device |
KR100772116B1 (ko) * | 2006-10-31 | 2007-11-01 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그의 제조방법 |
US8067762B2 (en) | 2006-11-16 | 2011-11-29 | Macronix International Co., Ltd. | Resistance random access memory structure for enhanced retention |
KR101296288B1 (ko) * | 2006-12-29 | 2013-08-14 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 동작 방법 |
TWI326917B (en) * | 2007-02-01 | 2010-07-01 | Ind Tech Res Inst | Phase-change memory |
JP2008217937A (ja) * | 2007-03-06 | 2008-09-18 | Toshiba Corp | 強誘電体記憶装置及びその制御方法 |
US7969769B2 (en) * | 2007-03-15 | 2011-06-28 | Ovonyx, Inc. | Multi-terminal chalcogenide logic circuits |
KR100872883B1 (ko) * | 2007-03-22 | 2008-12-10 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
US7626860B2 (en) * | 2007-03-23 | 2009-12-01 | International Business Machines Corporation | Optimized phase change write method |
US7745231B2 (en) * | 2007-04-17 | 2010-06-29 | Micron Technology, Inc. | Resistive memory cell fabrication methods and devices |
US7848138B2 (en) * | 2007-06-01 | 2010-12-07 | Intel Corporation | Biasing a phase change memory device |
US8125821B2 (en) * | 2007-06-01 | 2012-02-28 | Infineon Technologies Ag | Method of operating phase-change memory |
US7687309B2 (en) * | 2007-06-28 | 2010-03-30 | International Business Machines Corporation | CMOS-process-compatible programmable via device |
US7772582B2 (en) | 2007-07-11 | 2010-08-10 | International Business Machines Corporation | Four-terminal reconfigurable devices |
US7881092B2 (en) * | 2007-07-24 | 2011-02-01 | Rising Silicon, Inc. | Increased switching cycle resistive memory element |
US8679977B2 (en) | 2007-07-25 | 2014-03-25 | Micron Technology, Inc. | Method and apparatus providing multi-planed array memory device |
US7995371B2 (en) * | 2007-07-26 | 2011-08-09 | Unity Semiconductor Corporation | Threshold device for a memory array |
US7659534B2 (en) * | 2007-08-03 | 2010-02-09 | International Business Machines Corporation | Programmable via devices with air gap isolation |
US7969770B2 (en) * | 2007-08-03 | 2011-06-28 | International Business Machines Corporation | Programmable via devices in back end of line level |
US7678605B2 (en) * | 2007-08-30 | 2010-03-16 | Dupont Air Products Nanomaterials Llc | Method for chemical mechanical planarization of chalcogenide materials |
US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
US9000408B2 (en) * | 2007-10-12 | 2015-04-07 | Ovonyx, Inc. | Memory device with low reset current |
US8098517B2 (en) * | 2007-10-31 | 2012-01-17 | Ovonyx, Inc. | Method of restoring variable resistance memory device |
TWI347607B (en) | 2007-11-08 | 2011-08-21 | Ind Tech Res Inst | Writing system and method for a phase change memory |
US7791933B2 (en) * | 2007-12-21 | 2010-09-07 | International Business Machines Corporation | Optimized phase change write method |
US8426838B2 (en) | 2008-01-25 | 2013-04-23 | Higgs Opl. Capital Llc | Phase-change memory |
US8674792B2 (en) | 2008-02-07 | 2014-03-18 | Toyota Motor Engineering & Manufacturing North America, Inc. | Tunable metamaterials |
US20090257275A1 (en) * | 2008-04-09 | 2009-10-15 | Karpov Ilya V | Seasoning phase change memories |
US20090256133A1 (en) * | 2008-04-09 | 2009-10-15 | Kau Derchang | Multiple layer resistive memory |
JP5244454B2 (ja) * | 2008-05-19 | 2013-07-24 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
US8053753B2 (en) * | 2008-06-06 | 2011-11-08 | Ovonyx, Inc. | Thin film logic circuitry |
US8284596B2 (en) * | 2008-06-09 | 2012-10-09 | Qimonda Ag | Integrated circuit including an array of diodes coupled to a layer of resistance changing material |
US7978507B2 (en) * | 2008-06-27 | 2011-07-12 | Sandisk 3D, Llc | Pulse reset for non-volatile storage |
US7974119B2 (en) | 2008-07-10 | 2011-07-05 | Seagate Technology Llc | Transmission gate-based spin-transfer torque memory unit |
US8467236B2 (en) | 2008-08-01 | 2013-06-18 | Boise State University | Continuously variable resistor |
US9263126B1 (en) | 2010-09-01 | 2016-02-16 | Nantero Inc. | Method for dynamically accessing and programming resistive change element arrays |
US7715228B2 (en) * | 2008-08-25 | 2010-05-11 | Nve Corporation | Cross-point magnetoresistive memory |
US9030867B2 (en) * | 2008-10-20 | 2015-05-12 | Seagate Technology Llc | Bipolar CMOS select device for resistive sense memory |
US7936580B2 (en) | 2008-10-20 | 2011-05-03 | Seagate Technology Llc | MRAM diode array and access method |
US7936583B2 (en) * | 2008-10-30 | 2011-05-03 | Seagate Technology Llc | Variable resistive memory punchthrough access method |
US7825478B2 (en) * | 2008-11-07 | 2010-11-02 | Seagate Technology Llc | Polarity dependent switch for resistive sense memory |
US8604457B2 (en) | 2008-11-12 | 2013-12-10 | Higgs Opl. Capital Llc | Phase-change memory element |
US8178864B2 (en) | 2008-11-18 | 2012-05-15 | Seagate Technology Llc | Asymmetric barrier diode |
US8203869B2 (en) | 2008-12-02 | 2012-06-19 | Seagate Technology Llc | Bit line charge accumulation sensing for resistive changing memory |
US8154006B2 (en) * | 2008-12-29 | 2012-04-10 | Micron Technology, Inc. | Controlling the circuitry and memory array relative height in a phase change memory feol process flow |
US8148707B2 (en) * | 2008-12-30 | 2012-04-03 | Stmicroelectronics S.R.L. | Ovonic threshold switch film composition for TSLAGS material |
TWI402845B (zh) | 2008-12-30 | 2013-07-21 | Higgs Opl Capital Llc | 相變化記憶體陣列之驗證電路及方法 |
US8377741B2 (en) * | 2008-12-30 | 2013-02-19 | Stmicroelectronics S.R.L. | Self-heating phase change memory cell architecture |
US7939815B2 (en) * | 2008-12-30 | 2011-05-10 | Stmicroelectronics S.R.L. | Forming a carbon passivated ovonic threshold switch |
TWI412124B (zh) | 2008-12-31 | 2013-10-11 | Higgs Opl Capital Llc | 相變化記憶體 |
US8144506B2 (en) | 2009-06-23 | 2012-03-27 | Micron Technology, Inc. | Cross-point memory devices, electronic systems including cross-point memory devices and methods of accessing a plurality of memory cells in a cross-point memory array |
US8159856B2 (en) | 2009-07-07 | 2012-04-17 | Seagate Technology Llc | Bipolar select device for resistive sense memory |
US8158964B2 (en) | 2009-07-13 | 2012-04-17 | Seagate Technology Llc | Schottky diode switch and memory units containing the same |
US8278641B2 (en) | 2009-12-23 | 2012-10-02 | Intel Corporation | Fabricating current-confining structures in phase change memory switch cells |
TWI416661B (zh) * | 2009-12-29 | 2013-11-21 | Ind Tech Res Inst | 空隙製造方法、電阻式記憶元件及其製造方法 |
US8367460B2 (en) * | 2010-06-22 | 2013-02-05 | Micron Technology, Inc. | Horizontally oriented and vertically stacked memory cells |
US20120002461A1 (en) * | 2010-07-02 | 2012-01-05 | Karpov Elijah I | Non-volatile memory with ovonic threshold switch and resistive memory element |
JP2012069664A (ja) * | 2010-09-22 | 2012-04-05 | Toshiba Corp | 抵抗変化型メモリ |
US8649212B2 (en) | 2010-09-24 | 2014-02-11 | Intel Corporation | Method, apparatus and system to determine access information for a phase change memory |
US8648426B2 (en) | 2010-12-17 | 2014-02-11 | Seagate Technology Llc | Tunneling transistors |
US8675423B2 (en) | 2012-05-07 | 2014-03-18 | Micron Technology, Inc. | Apparatuses and methods including supply current in memory |
US9245926B2 (en) * | 2012-05-07 | 2016-01-26 | Micron Technology, Inc. | Apparatuses and methods including memory access in cross point memory |
US8890105B2 (en) * | 2012-08-29 | 2014-11-18 | Kabushiki Kaisha Toshiba | Nonvolatile memory |
US9343317B2 (en) * | 2013-07-01 | 2016-05-17 | Micron Technology, Inc. | Methods of forming silicon-containing dielectric materials and semiconductor device structures |
US20160005965A1 (en) * | 2014-07-01 | 2016-01-07 | Micron Technology, Inc. | Memory cells having a first selecting chalcogenide material and a second selecting chalcogenide material and methods therof |
US10115819B2 (en) | 2015-05-29 | 2018-10-30 | Crossbar, Inc. | Recessed high voltage metal oxide semiconductor transistor for RRAM cell |
US9460788B2 (en) | 2014-07-09 | 2016-10-04 | Crossbar, Inc. | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor |
US9548450B2 (en) * | 2014-09-23 | 2017-01-17 | Micron Technology, Inc. | Devices containing metal chalcogenides |
US9406881B1 (en) | 2015-04-24 | 2016-08-02 | Micron Technology, Inc. | Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same |
KR102507303B1 (ko) * | 2016-02-22 | 2023-03-08 | 삼성전자주식회사 | 메모리 소자 |
US10192616B2 (en) * | 2016-06-28 | 2019-01-29 | Western Digital Technologies, Inc. | Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selects |
US9793323B1 (en) | 2016-07-11 | 2017-10-17 | Macronix International Co., Ltd. | Phase change memory with high endurance |
KR102532201B1 (ko) | 2016-07-22 | 2023-05-12 | 삼성전자 주식회사 | 메모리 소자 |
US9786345B1 (en) * | 2016-09-16 | 2017-10-10 | Micron Technology, Inc. | Compensation for threshold voltage variation of memory cell components |
KR102544160B1 (ko) * | 2016-09-19 | 2023-06-16 | 에스케이하이닉스 주식회사 | 전압 제어 장치 |
US10068663B1 (en) | 2017-05-30 | 2018-09-04 | Seagate Technology Llc | Data storage device with rewriteable in-place memory |
US11449431B2 (en) | 2017-05-30 | 2022-09-20 | Seagate Technology Llc | Data storage device with rewritable in-place memory |
US10090067B1 (en) | 2017-05-30 | 2018-10-02 | Seagate Technology Llc | Data storage device with rewritable in-place memory |
US10147501B1 (en) | 2017-05-30 | 2018-12-04 | Seagate Technology Llc | Data storage device with rewriteable in-place memory |
KR102595902B1 (ko) | 2018-08-23 | 2023-10-30 | 삼성전자주식회사 | 저항성 메모리 소자 |
US10998024B2 (en) * | 2019-07-31 | 2021-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for enhancing tunnel magnetoresistance in memory device |
US11139025B2 (en) | 2020-01-22 | 2021-10-05 | International Business Machines Corporation | Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3629863A (en) * | 1968-11-04 | 1971-12-21 | Energy Conversion Devices Inc | Film deposited circuits and devices therefor |
GB1372414A (en) * | 1971-11-26 | 1974-10-30 | Marconi Co Ltd | Semiconductor memory device arrangements |
JPS5620714B2 (zh) * | 1972-06-27 | 1981-05-15 | ||
US3872492A (en) * | 1972-07-26 | 1975-03-18 | Energy Conversion Devices Inc | Radiation hardened field effect transistor |
DD251225A1 (de) * | 1986-07-18 | 1987-11-04 | Karl Marx Stadt Tech Hochschul | Entkoppelte anordnung amorpher speicherelemente |
JPH03109526A (ja) * | 1989-06-20 | 1991-05-09 | Japan Synthetic Rubber Co Ltd | 液晶表示装置用アクティブマトリックス基板 |
JPH04127569A (ja) * | 1990-09-19 | 1992-04-28 | Hitachi Ltd | 半導体装置およびその製造方法 |
US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5296716A (en) * | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5818749A (en) * | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
US6072454A (en) * | 1996-03-01 | 2000-06-06 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
US5923582A (en) * | 1997-06-03 | 1999-07-13 | Cypress Semiconductor Corp. | SRAM with ROM functionality |
US6157566A (en) * | 1997-08-20 | 2000-12-05 | Micron Technology, Inc. | Reduced leakage DRAM storage unit |
JP4491870B2 (ja) * | 1999-10-27 | 2010-06-30 | ソニー株式会社 | 不揮発性メモリの駆動方法 |
US6534781B2 (en) * | 2000-12-26 | 2003-03-18 | Ovonyx, Inc. | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact |
US6707749B2 (en) * | 2002-08-14 | 2004-03-16 | Intel Corporation | Enabling an interim density for top boot flash memories |
-
2002
- 2002-12-13 US US10/319,769 patent/US6795338B2/en not_active Expired - Lifetime
-
2003
- 2003-05-22 JP JP2004560268A patent/JP4869600B2/ja not_active Expired - Fee Related
- 2003-05-22 AU AU2003241617A patent/AU2003241617A1/en not_active Abandoned
- 2003-05-22 CN CNB038256096A patent/CN100552812C/zh not_active Expired - Lifetime
- 2003-05-22 WO PCT/US2003/016481 patent/WO2004055828A2/en active Application Filing
- 2003-05-22 KR KR1020057010582A patent/KR100669313B1/ko active IP Right Grant
- 2003-05-28 TW TW092114451A patent/TWI237315B/zh not_active IP Right Cessation
- 2003-06-10 MY MYPI20032163A patent/MY133250A/en unknown
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102598139B (zh) * | 2009-07-13 | 2015-01-14 | 希捷科技有限公司 | 具有非欧姆选择层的非易失性存储单元 |
CN102598139A (zh) * | 2009-07-13 | 2012-07-18 | 希捷科技有限公司 | 具有非欧姆选择层的非易失性存储单元 |
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US10910561B1 (en) | 2012-04-13 | 2021-02-02 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
USRE47506E1 (en) | 2012-10-30 | 2019-07-09 | SK Hynix Inc. | Variable resistance memory device |
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CN103794619A (zh) * | 2012-10-30 | 2014-05-14 | 爱思开海力士有限公司 | 可变电阻存储器件 |
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US10964388B2 (en) | 2014-03-11 | 2021-03-30 | Crossbar, Inc. | Selector device for two-terminal memory |
US11776626B2 (en) | 2014-03-11 | 2023-10-03 | Crossbar, Inc. | Selector device for two-terminal memory |
CN105244058A (zh) * | 2014-07-07 | 2016-01-13 | 科洛斯巴股份有限公司 | 使用选择器器件保持特性的非易失性存储器器件感测方法 |
US10211397B1 (en) | 2014-07-07 | 2019-02-19 | Crossbar, Inc. | Threshold voltage tuning for a volatile selection device |
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US10541025B2 (en) | 2017-03-24 | 2020-01-21 | Crossbar, Inc. | Switching block configuration bit comprising a non-volatile memory cell |
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KR100669313B1 (ko) | 2007-01-16 |
WO2004055828A2 (en) | 2004-07-01 |
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JP2006510220A (ja) | 2006-03-23 |
KR20050085533A (ko) | 2005-08-29 |
AU2003241617A1 (en) | 2004-07-09 |
MY133250A (en) | 2007-10-31 |
WO2004055828A3 (en) | 2004-11-04 |
TW200410327A (en) | 2004-06-16 |
US20040114413A1 (en) | 2004-06-17 |
TWI237315B (en) | 2005-08-01 |
CN100552812C (zh) | 2009-10-21 |
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