CN1636081A - 无电电镀系统 - Google Patents

无电电镀系统 Download PDF

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Publication number
CN1636081A
CN1636081A CN02826367.7A CN02826367A CN1636081A CN 1636081 A CN1636081 A CN 1636081A CN 02826367 A CN02826367 A CN 02826367A CN 1636081 A CN1636081 A CN 1636081A
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CN
China
Prior art keywords
substrate
sealing member
chamber
fluid
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN02826367.7A
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English (en)
Chinese (zh)
Inventor
约瑟夫·J·史帝文斯
德米翠·露波默斯基
伊安·潘乔
多诺·J·欧嘉度
霍华德·J·葛伦尼斯
尤克-法伊·埃德温·莫克
吉利西·迪克希特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1636081A publication Critical patent/CN1636081A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1689—After-treatment
    • C23C18/1692—Heat-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electroplating Methods And Accessories (AREA)
CN02826367.7A 2001-12-26 2002-12-20 无电电镀系统 Pending CN1636081A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/036,321 2001-12-26
US10/036,321 US6824612B2 (en) 2001-12-26 2001-12-26 Electroless plating system

Publications (1)

Publication Number Publication Date
CN1636081A true CN1636081A (zh) 2005-07-06

Family

ID=21887935

Family Applications (1)

Application Number Title Priority Date Filing Date
CN02826367.7A Pending CN1636081A (zh) 2001-12-26 2002-12-20 无电电镀系统

Country Status (5)

Country Link
US (1) US6824612B2 (enExample)
JP (1) JP2006501360A (enExample)
CN (1) CN1636081A (enExample)
TW (1) TWI258190B (enExample)
WO (1) WO2003057943A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102906868A (zh) * 2010-05-26 2013-01-30 应用材料公司 降低静电放电的设备及方法
CN113192859A (zh) * 2020-01-14 2021-07-30 长鑫存储技术有限公司 晶圆加工系统及晶圆加工方法

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US20030190426A1 (en) * 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
JP2004081988A (ja) * 2002-08-27 2004-03-18 Seiko Epson Corp 製膜方法と製膜装置及びデバイス製造方法並びにデバイス製造装置
US20050022909A1 (en) * 2003-03-20 2005-02-03 Xinming Wang Substrate processing method and substrate processing apparatus
US6881437B2 (en) * 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
US7883739B2 (en) 2003-06-16 2011-02-08 Lam Research Corporation Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
JP2005013787A (ja) * 2003-06-23 2005-01-20 Tokyo Electron Ltd 塗布成膜装置及び塗布成膜方法
US7827930B2 (en) 2004-01-26 2010-11-09 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7654221B2 (en) 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7311779B2 (en) * 2003-10-06 2007-12-25 Applied Materials, Inc. Heating apparatus to heat wafers using water and plate with turbolators
US7223308B2 (en) * 2003-10-06 2007-05-29 Applied Materials, Inc. Apparatus to improve wafer temperature uniformity for face-up wet processing
US7064065B2 (en) 2003-10-15 2006-06-20 Applied Materials, Inc. Silver under-layers for electroless cobalt alloys
US7205233B2 (en) 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
US7256111B2 (en) * 2004-01-26 2007-08-14 Applied Materials, Inc. Pretreatment for electroless deposition
JPWO2005105322A1 (ja) * 2004-04-28 2008-03-13 株式会社荏原製作所 基板処理ユニット及び基板処理装置
US8844461B2 (en) * 2007-04-16 2014-09-30 Lam Research Corporation Fluid handling system for wafer electroless plating and associated methods
US8069813B2 (en) * 2007-04-16 2011-12-06 Lam Research Corporation Wafer electroless plating system and associated methods
US8485120B2 (en) * 2007-04-16 2013-07-16 Lam Research Corporation Method and apparatus for wafer electroless plating
US20060000109A1 (en) * 2004-07-03 2006-01-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for reducing spin-induced wafer charging
US7714441B2 (en) * 2004-08-09 2010-05-11 Lam Research Barrier layer configurations and methods for processing microelectronic topographies having barrier layers
WO2006102318A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Electroless deposition process on a contact containing silicon or silicide
US20060252252A1 (en) 2005-03-18 2006-11-09 Zhize Zhu Electroless deposition processes and compositions for forming interconnects
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7644512B1 (en) 2006-01-18 2010-01-12 Akrion, Inc. Systems and methods for drying a rotating substrate
KR100829923B1 (ko) * 2006-08-30 2008-05-16 세메스 주식회사 스핀헤드 및 이를 이용하는 기판처리방법
US20080152823A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Self-limiting plating method
US7794530B2 (en) 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
US7521358B2 (en) * 2006-12-26 2009-04-21 Lam Research Corporation Process integration scheme to lower overall dielectric constant in BEoL interconnect structures
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8540819B2 (en) * 2008-03-21 2013-09-24 Ngk Insulators, Ltd. Ceramic heater
US9048088B2 (en) 2008-03-28 2015-06-02 Lam Research Corporation Processes and solutions for substrate cleaning and electroless deposition
TWI476299B (zh) 2010-06-23 2015-03-11 Ind Tech Res Inst 化學浴鍍膜設備及化合物薄膜的製造方法
US20120145201A1 (en) * 2010-12-13 2012-06-14 Chang-Hsin Wu Spin rinse dry apparatus and method of processing a wafer using the same
US9421617B2 (en) 2011-06-22 2016-08-23 Tel Nexx, Inc. Substrate holder
JP5666394B2 (ja) * 2011-06-29 2015-02-12 東京エレクトロン株式会社 めっき処理装置、めっき処理方法および記憶媒体
US8613474B2 (en) 2011-07-06 2013-12-24 Tel Nexx, Inc. Substrate loader and unloader having a Bernoulli support
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
TWI864428B (zh) * 2022-08-10 2024-12-01 日商荏原製作所股份有限公司 鍍覆方法及鍍覆裝置

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3727620A (en) 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US3772105A (en) 1970-07-24 1973-11-13 Shipley Co Continuous etching process
US3770598A (en) 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4027686A (en) 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
AU496780B2 (en) 1975-03-11 1978-10-26 Oxy Metal Industries Corporation Additives in baths forthe electrodeposition of copper
US3953265A (en) 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
US3990462A (en) 1975-05-19 1976-11-09 Fluoroware Systems Corporation Substrate stripping and cleaning apparatus
JPS5271871A (en) 1975-12-11 1977-06-15 Nec Corp Washing apparatus
JPS5819350B2 (ja) 1976-04-08 1983-04-18 富士写真フイルム株式会社 スピンコ−テイング方法
US4326940A (en) 1979-05-21 1982-04-27 Rohco Incorporated Automatic analyzer and control system for electroplating baths
US4315059A (en) 1980-07-18 1982-02-09 The United States Of America As Represented By The United States Department Of Energy Molten salt lithium cells
US4405416A (en) 1980-07-18 1983-09-20 Raistrick Ian D Molten salt lithium cells
US4336114A (en) 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
DE3272891D1 (en) 1981-10-01 1986-10-02 Emi Ltd Electroplating arrangements
US4429983A (en) 1982-03-22 1984-02-07 International Business Machines Corporation Developing apparatus for exposed photoresist coated wafers
US4439243A (en) 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal with fluid flow within a slot
US4439244A (en) 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal having a fluid filled slot
US4838289A (en) 1982-08-03 1989-06-13 Texas Instruments Incorporated Apparatus and method for edge cleaning
US4489740A (en) 1982-12-27 1984-12-25 General Signal Corporation Disc cleaning machine
US4510176A (en) 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4518678A (en) 1983-12-16 1985-05-21 Advanced Micro Devices, Inc. Selective removal of coating material on a coated substrate
JPS60210840A (ja) 1984-03-06 1985-10-23 Fujitsu Ltd スピン処理装置
US4519846A (en) 1984-03-08 1985-05-28 Seiichiro Aigo Process for washing and drying a semiconductor element
JPS61279858A (ja) 1985-06-05 1986-12-10 Mitsubishi Electric Corp ネガレジスト現像装置
US4677758A (en) 1985-10-08 1987-07-07 Seiichiro Aigo Spin drier for semiconductor material
US4693805A (en) 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4788994A (en) 1986-08-13 1988-12-06 Dainippon Screen Mfg. Co. Wafer holding mechanism
US4732785A (en) 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
US4875434A (en) 1987-04-02 1989-10-24 Mitsubishi Denki Kabushiki Kaisha Apparatus for coating a substrate with a coating material
FR2623134B1 (fr) 1987-11-13 1991-08-02 Salem Ali Procede technique de decoupe et d'ajourage de plaques metalliques en vue de leur reproduction et incrustation
US5224504A (en) 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5230743A (en) 1988-05-25 1993-07-27 Semitool, Inc. Method for single wafer processing in which a semiconductor wafer is contacted with a fluid
JPH01316936A (ja) 1988-06-17 1989-12-21 Toshiba Corp 半導体基板エッチング処理装置
US5316974A (en) 1988-12-19 1994-05-31 Texas Instruments Incorporated Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer
JPH02253620A (ja) 1989-03-28 1990-10-12 Oki Electric Ind Co Ltd 半導体基板の洗浄装置
JP2803143B2 (ja) 1989-04-14 1998-09-24 カシオ計算機株式会社 半導体ウエハのメッキ前処理方法
US5039381A (en) 1989-05-25 1991-08-13 Mullarkey Edward J Method of electroplating a precious metal on a semiconductor device, integrated circuit or the like
US5055425A (en) 1989-06-01 1991-10-08 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US5162260A (en) 1989-06-01 1992-11-10 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US4989345A (en) 1989-12-18 1991-02-05 Gill Jr Gerald L Centrifugal spin dryer for semiconductor wafer
US5155336A (en) 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
JP2841618B2 (ja) 1990-01-25 1998-12-24 日本電気株式会社 ウェットエッチング装置
US5232511A (en) 1990-05-15 1993-08-03 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous mixed acid vapors
US5222310A (en) 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
JP2902728B2 (ja) * 1990-05-29 1999-06-07 新光電気工業株式会社 片面めっき方法
US5259407A (en) 1990-06-15 1993-11-09 Matrix Inc. Surface treatment method and apparatus for a semiconductor wafer
US5252807A (en) 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5368711A (en) 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
US5256274A (en) 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
JPH0810686B2 (ja) 1990-09-14 1996-01-31 株式会社東芝 半導体基板エッチング処理装置
CA2059841A1 (en) 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method
DE4109955A1 (de) 1991-03-26 1992-10-01 Siemens Ag Verfahren zum nasschemischen aetzen einer wolframrueckseitenbeschichtung auf einer halbleiterscheibe
JPH04363022A (ja) 1991-06-06 1992-12-15 Enya Syst:Kk 貼付板洗浄装置
JPH0513322A (ja) 1991-07-09 1993-01-22 Ryoden Semiconductor Syst Eng Kk 被膜溶剤塗布装置
JPH0715897B2 (ja) 1991-11-20 1995-02-22 株式会社エンヤシステム ウエ−ハ端面エッチング方法及び装置
JPH05160104A (ja) 1991-12-05 1993-06-25 Fujitsu Ltd 半導体ウェーハのウェット処理方法及びウェット処理装置
DE4202194C2 (de) 1992-01-28 1996-09-19 Fairchild Convac Gmbh Geraete Verfahren und Vorrichtung zum partiellen Entfernen von dünnen Schichten von einem Substrat
JP3200468B2 (ja) 1992-05-21 2001-08-20 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用めっき装置
JP2654314B2 (ja) 1992-06-04 1997-09-17 東京応化工業株式会社 裏面洗浄装置
JPH0617291A (ja) 1992-07-03 1994-01-25 Nec Corp 金属めっき装置
US5328589A (en) 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
JP3277404B2 (ja) 1993-03-31 2002-04-22 ソニー株式会社 基板洗浄方法及び基板洗浄装置
US5337708A (en) 1993-06-15 1994-08-16 Chen We Yu Apparatus and method for automatic transmission system fluid exchange and internal system flushing
JP3247211B2 (ja) 1993-08-02 2002-01-15 富士通株式会社 配線用銅膜表面の酸化銅除去方法
US5608943A (en) 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5625170A (en) 1994-01-18 1997-04-29 Nanometrics Incorporated Precision weighing to monitor the thickness and uniformity of deposited or etched thin film
JP3377849B2 (ja) 1994-02-02 2003-02-17 日本エレクトロプレイテイング・エンジニヤース株式会社 ウエーハ用メッキ装置
JPH07235473A (ja) * 1994-02-24 1995-09-05 Hitachi Ltd 液体供給方法及び回転式液体供給装置及び回転式レジスト現像処理装置
US5651865A (en) 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5753133A (en) 1994-07-11 1998-05-19 Applied Komatsu Technology, Inc. Method and apparatus for etching film layers on large substrates
US5705223A (en) 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
TW402758B (en) 1996-05-20 2000-08-21 Tokyo Electorn Limtied Spin dryer and method of drying substrates
US5899216A (en) 1996-07-08 1999-05-04 Speedfam Corporation Apparatus for rinsing wafers in the context of a combined cleaning rinsing and drying system
US6264752B1 (en) * 1998-03-13 2001-07-24 Gary L. Curtis Reactor for processing a microelectronic workpiece
US5997653A (en) 1996-10-07 1999-12-07 Tokyo Electron Limited Method for washing and drying substrates
US6114254A (en) 1996-10-15 2000-09-05 Micron Technology, Inc. Method for removing contaminants from a semiconductor wafer
US5937469A (en) 1996-12-03 1999-08-17 Intel Corporation Apparatus for mechanically cleaning the edges of wafers
TW345681B (en) 1996-12-13 1998-11-21 Taiwan Semiconductor Mfg Co Ltd Method for removing covering layer on the peripheral edge portion of wafer
JP3300624B2 (ja) 1997-01-24 2002-07-08 東京エレクトロン株式会社 基板端面の洗浄方法
KR100249309B1 (ko) 1997-02-28 2000-03-15 윤종용 반도체 제조용 포토 레지스트 코팅 장치
TW419716B (en) 1997-04-28 2001-01-21 Tokyo Electron Ltd Processing apparatus
US5783097A (en) 1997-06-09 1998-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Process to avoid dielectric damage at the flat edge of the water
US6017437A (en) 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate
US5974681A (en) 1997-09-10 1999-11-02 Speedfam-Ipec Corp. Apparatus for spin drying a workpiece
JPH1192949A (ja) * 1997-09-16 1999-04-06 Ebara Corp 半導体ウエハーの配線メッキ装置
JP3830272B2 (ja) * 1998-03-05 2006-10-04 株式会社荏原製作所 基板のめっき装置
US6027631A (en) 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US5897379A (en) 1997-12-19 1999-04-27 Sharp Microelectronics Technology, Inc. Low temperature system and method for CVD copper removal
US6117778A (en) 1998-02-11 2000-09-12 International Business Machines Corporation Semiconductor wafer edge bead removal method and tool
US6632292B1 (en) * 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
JP3534605B2 (ja) * 1998-03-27 2004-06-07 大日本スクリーン製造株式会社 基板メッキ装置
DE69929967T2 (de) 1998-04-21 2007-05-24 Applied Materials, Inc., Santa Clara Elektroplattierungssystem und verfahren zur elektroplattierung auf substraten
US6099702A (en) 1998-06-10 2000-08-08 Novellus Systems, Inc. Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability
JP4162298B2 (ja) * 1998-08-11 2008-10-08 株式会社荏原製作所 基板めっき装置
JP2000064087A (ja) * 1998-08-17 2000-02-29 Dainippon Screen Mfg Co Ltd 基板メッキ方法及び基板メッキ装置
JP2000124156A (ja) * 1998-10-12 2000-04-28 Sony Corp 半導体製造装置
US6267853B1 (en) 1999-07-09 2001-07-31 Applied Materials, Inc. Electro-chemical deposition system
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6254760B1 (en) 1999-03-05 2001-07-03 Applied Materials, Inc. Electro-chemical deposition system and method
US6290865B1 (en) 1998-11-30 2001-09-18 Applied Materials, Inc. Spin-rinse-drying process for electroplated semiconductor wafers
DE19902194A1 (de) * 1999-01-21 2000-07-27 Stahlecker Fritz Flyer-Streckwerk mit nachfolgender Kondensierzone
US6136163A (en) * 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6254742B1 (en) 1999-07-12 2001-07-03 Semitool, Inc. Diffuser with spiral opening pattern for an electroplating reactor vessel
US6309981B1 (en) 1999-10-01 2001-10-30 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
KR100773165B1 (ko) * 1999-12-24 2007-11-02 가부시키가이샤 에바라 세이사꾸쇼 반도체기판처리장치 및 처리방법
JP3866012B2 (ja) * 2000-06-02 2007-01-10 株式会社荏原製作所 無電解めっき方法及び装置
US20020152955A1 (en) * 1999-12-30 2002-10-24 Yezdi Dordi Apparatus and method for depositing an electroless solution
JP2001192845A (ja) * 2000-01-13 2001-07-17 Tokyo Electron Ltd 無電解メッキ装置及び無電解メッキ方法
US6634370B2 (en) * 2000-05-08 2003-10-21 Tokyo Electron Limited Liquid treatment system and liquid treatment method
JP3668100B2 (ja) * 2000-06-07 2005-07-06 株式会社荏原製作所 基板処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102906868A (zh) * 2010-05-26 2013-01-30 应用材料公司 降低静电放电的设备及方法
CN102906868B (zh) * 2010-05-26 2016-06-01 应用材料公司 降低静电放电的设备及方法
CN113192859A (zh) * 2020-01-14 2021-07-30 长鑫存储技术有限公司 晶圆加工系统及晶圆加工方法
CN113192859B (zh) * 2020-01-14 2022-10-21 长鑫存储技术有限公司 晶圆加工系统及晶圆加工方法

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US6824612B2 (en) 2004-11-30
TWI258190B (en) 2006-07-11
WO2003057943A3 (en) 2005-07-07

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