CN1922344A - 用于无电沉积的装置 - Google Patents
用于无电沉积的装置 Download PDFInfo
- Publication number
- CN1922344A CN1922344A CNA2004800300528A CN200480030052A CN1922344A CN 1922344 A CN1922344 A CN 1922344A CN A2004800300528 A CNA2004800300528 A CN A2004800300528A CN 200480030052 A CN200480030052 A CN 200480030052A CN 1922344 A CN1922344 A CN 1922344A
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- China
- Prior art keywords
- substrate
- fluid
- processing
- chamber
- electroless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/1619—Apparatus for electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1678—Heating of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1682—Control of atmosphere
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/28—Sensitising or activating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明的实施例一般地提供了一种流体处理平台。该平台包括具有衬底传输机械手的主机、主机上的至少一个衬底清洁室、以及至少一个处理外壳。处理外壳包括定位成与处理外壳的内部流体连接的气体供应、定位在外壳中的第一流体处理室、定位成支撑衬底用于在第一流体处理室中进行处理的第一衬底头组件设置、定位在外壳中的第二流体处理室、定位成支撑衬底用于在第二流体处理室中进行处理的第二头组件、以及定位在第一和第二流体处理室之间并设置为将衬底在流体处理室和主机机械手之间传输的衬底梭。
Description
技术领域
本发明的实施例一般地涉及用于进行无电沉积处理的处理平台。
背景技术
对尺寸在100纳米以下的特征的金属化是目前和未来几代集成电路制造工艺的基础技术。更具体地说,在例如超大规模集成电路器件的器件中,即具有超过一百万个逻辑门的集成电路的器件中,处于这些器件中心的多级互连通常是用导体材料例如铜填充互连特征而形成的,所述互连特征具有较高的长宽比,即大于约10∶1。传统上,例如化学气相沉积和物理气相沉积的沉积技术已经用于填充互连特征。但是,随着互连尺寸的减小和长宽比的增加,用传统的金属化技术进行无空洞的互连填充变得越来越困难。因此,已经出现了镀技术即电化学镀和无电沉积,作为集成电路制造工艺中用于对尺寸在100纳米以下的高长宽比互连特征进行无空洞填充的很有前途的工艺。而且,镀处理以及具体而言的无电沉积处理已经作为对后沉积层例如覆盖层(capping layer)进行沉积的有前途的处理而出现。
但是,对于无电沉积处理,传统的处理装置和方法面临着对无电沉积处理以及所得沉积层中的缺陷率进行精确控制的挑战。此外,需要一种用于无电沉积处理的功能集成平台,它能够进行衬底沉积前后的清洁、以最小限度的缺陷沉积均匀的无电层并对衬底进行退火。
发明内容
本发明的实施例一般地提供了一种无电衬底处理平台。该平台通常包括一般称为工厂接口的衬底接口部分,以及主机处理部分。衬底接口部分通常用于将衬底传递到处理主机和从处理主机取出衬底,其中沉积处理在所述处理主机处进行。主机通常包括斜边清洁室、可以与斜边清洁室结合的衬底清洗和干燥室、以及无电沉积组件,所有这些都可以由主机机械手操作。此外,退火台可以定位与主机相连或与衬底接口部分相连。
本发明的实施例一般地提供了一种流体处理平台。该流体处理平台包括带有衬底传输机械手的主机、定位在主机上的至少一个衬底清洁室、以及包含无电沉积组件的至少一个处理外壳。该处理外壳包括定位成与处理外壳的内部流体连接的气体供应组件、定位在外壳中的第一流体处理室、定位成支撑衬底用于在第一流体处理室中进行处理的第一衬底头组件、定位在外壳中的第二流体处理室、定位成支撑衬底用于在第二流体处理室中进行处理的第二头组件、以及定位在第一和第二流体处理室之间并设置为将衬底在流体处理室与主机机械手之间进行传输的衬底梭。
本发明的实施例还可以提供用于在衬底上沉积金属的方法。该方法一般地包括将衬底定位于设在处理外壳中的梭上、使惰性的气体流入沉积外壳以在外壳中提供小于约100ppm的氧气含量、用梭将衬底传输到第一流体处理室用于活化处理、以及用梭将衬底传输到第二流体处理室用于无电沉积处理。
附图说明
本发明在上面进行了简要概括,参考实施例可以对本发明有更具体的说明,以便可以详细地理解本发明的上述特征,附图图示了所述实施例中的一些。但是应当明白,附图只是图示了本发明的典型实施例,因此不应被认为对其范围的限制,因为本发明可以采用其他等效的实施例。
图1图示了本发明的无电沉积系统一种实施例的平面图。
图2图示了本发明的无电沉积平台另一实施例的平面图。
图3图示了本发明的无电沉积平台另一实施例的平面图。
图3A图示了本发明的无电沉积平台另一实施例的平面图。
图4图示了本发明的无电沉积平台另一实施例的平面图。
图5图示了图4所示的无电沉积外壳的立体图。
图6图示了本发明的流体处理室的局部剖视立体图。
图7图示了本发明的头组件的立体图。
图8图示了本发明的衬底梭的立体图。
具体实施方式
本发明的实施例一般地提供了一种集成的无电沉积系统或平台。该平台通常包括工厂接口(FI)和定位成与FI相连通的主机处理部分。主机处理部分通常包括衬底清洁室、无电沉积组件和机械手,所述机械手设置为对清洁室和无电沉积组件中的处理室进行操作。退火台可以定位成与主机相连通或与衬底接口部分相连通,一旦沉积和/或清洁处理结束,就对衬底进行退火,或者如果愿意,也可以在沉积处理之前进行退火。
图1图示了本发明的示例性处理系统100的俯视平面图。系统100包括FI 130,所述FI 130具有多个设置为与衬底容纳盒对接的衬底装载台134。机械手132定位在FI 130中并设置为对位于装载台134上的盒中容纳的衬底进行操作。此外,机械手132还延伸到连接通道115中,所述连接通道115将FI 130连接到处理主机113。机械手132的位置允许其可以对装载台134进行操作以从其取回衬底然后将衬底传输到定位于处理主机113上的处理位置114、116之一,或者传输到退火台135。类似地,机械手132可以用于在衬底处理程序完成之后从处理位置114、116或退火台135取回衬底。在这种情况下,机械手132可以将衬底传输回定位于装载台134上的盒中的一个以便从系统中除去。FI 130还可以包括度量/检验台160,所述度量/检验台160可以用于在处理步骤之前和/或之后对衬底进行检验。度量/检验台可以用于例如对衬底上所镀材料的特性如厚度、平面度、颗粒结构等进行分析。可以将度量信息传送到后续处理部件用于控制在衬底上进行的后续处理,或者也可以将度量信息用于控制处理室中的后续处理步骤,其中所测量的衬底是来自所述处理室的。可用于本发明的实施例中的示例性度量/检验台包括BX-30高级互连测量系统和CD-SEM或DR-SEM检验台,它们都可以从加利福尼亚州Santa Clara的AppliedMaterials,Inc.买到。
退火台135通常包括双位置退火台,其中冷却板136和加热板137定位成彼此邻近,衬底传输机械手140定位成与它们接近,例如设在两个台之间。机械手140设置成使衬底在各个加热板137与冷却板136之间移动。此外,尽管图示的退火台135设置为使之可以从连接通道115操作,但本发明的实施例不限于任何具体的结构或位置。同样,退火台135可以设置为与处理主机113直接相连,即由主机机械手120操作,或者,退火台135也可以设置为与处理主机113相连,即退火台可以设置在与处理主机113同一个系统上,但不是与处理主机113直接接触或可由主机机械手120操作。例如,如图1所示,退火台135可以定位成直接与连接通道115相连,这使得可以对处理主机113进行操作,同样,退火台113图示为与处理主机113相连。对退火台135的另外的说明可以在共同受让的美国专利申请No.60/463,860中找到,它提交于2003年4月18日,题为“TwoPosition Anneal Chamber”,其全部内容通过引用而结合于此。
处理主机113包括对中定位的衬底传输机械手120。对中定位的衬底传输机械手120通常包括一个或多个臂/托板122、124,所述臂/托板122、124设置为在处理主机113上的不同位置和邻近的处理位置之间对支撑和传输衬底。另外,机械手120和附带的托板122、124通常设置为延伸、转动、围绕节点枢转(水平运动)和垂直运动,以使机械手120可以将衬底插入定位在处理主机113上的多个处理位置102、104、106、108、110、112、114、116或从这些位置将衬底取下。机械手120的托板122、124可以共同作用,即它们可以同时从邻近的处理位置传输衬底,或者,托板也可以独立操作,即在同一时间每个托板可以对主机不同侧上的不同处理位置进行操作。类似地,工厂接口机械手132也可以包括使其衬底支撑托板进行转动、延伸、枢转和垂直运动,同时仍然允许沿机械手导轨150的直线行进,所述机械手导轨150从工厂接口130延伸到处理主机113。通常,处理位置102、104、106、108、110、112、114、116可以包括衬底处理系统中使用的任意数量的处理室。更具体地说,处理室可以设置为电化学镀室、清洗室、斜边清洁室(bevel clean cell)、旋转清洗干燥室、衬底表面清洁室(其共同地包括了清洁、清洗和刻蚀室)、无电沉积室(包括预清洁和后清洁室、清洗室、活化室、沉积室等)、度量检验台和/或可能有利于与沉积平台结合使用的其他处理室。各处理室和机械手中的每个通常都与处理控制器111相连,处理控制器111可以是基于微处理器的控制系统,它设置为接收来自用户和/或定位在系统100上的各种传感器的输入,并根据输入对系统100的操作进行适当的控制。此外,处理室还与流体传递系统相连,所述流体传递系统设置为在处理期间向每个室分别供给必须的处理流体。示例性的处理流体传递系统可以在共同受让的美国专利申请No.10/438,624中找到,它提交于2003年5月14日,题为“Multi-Chemistry Electrochemical Processing System”,其全部内容通过引用而结合于此。
在图1所示的示例性无电沉积系统中,处理位置可以如下设置。处理位置114和116可以设置为处理主机113上的湿处理台与连接通道115、退火台135和FI 130中通常的干处理区域之间的接口。位于接口室处的处理室可以是例如旋转清洗干燥室和/或衬底清洁室。更具体地说,每个位置114和116可以包括堆叠布置的旋转清洗干燥室和衬底清洁室。可以用于本发明的实施例中的示例性旋转清洗干燥室的详细说明可以在共同转让的美国专利申请No.60/463,862中找到,它提交于2003年4月18日,题为“Spin Rinse Dry Cell”,其全部内容通过引用而结合于此。
处理位置106、108可以设置为斜边清洁室,即设置为在沉积处理完成之后从衬底的周边去除多余的沉积物的室。一种示例性斜边清洁室可以在共同受让的美国专利申请No.60/463,970中找到,它提交于2003年4月18日,题为“Integrated Bevel Clean Chamber”,其全部内容通过引用而结合于此。
处理位置102、104、110和112可以设置为镀室或镀支撑室,例如电化学镀室、无电沉积室、活化室和/或衬底清洗或清洁室。在处理室是无电沉积室的实施例中,平台100每侧有一个室通常是活化室,而平台同侧的另一个室是无电沉积室。这种设置通常可以镜像到平台100的相反侧。例如,处理位置102和112可以设置为活化室(将在下文中进一步讨论),而处理位置104和110可以设置为无电沉积室(也将在下文中进一步讨论)。在这种实施例中,被处理的衬底通常由主机机械手120定位在活化室位置102、112中,其上分配有表面活性溶液。之后,衬底可以在处理室位置114、116处进行清洗或清洁,然后由主机机械手120传输到无电沉积室位置104、110,在该处将无电沉积溶液分配到活化和清洁的表面上。或者,衬底可以在处理室位置102、104、110、112之一处进行清洗。之后,衬底可以在处理室位置114、116、122、124中的一个或多个处,或者在活化室位置102、112中进行清洁和/或清洗。
在图1所示的实施例中,主机机械手120用于将衬底定位在各处理室位置110、112、102、104以便处理。各处理室位置可以包括衬底支撑组件,所述衬底支撑组件设置为将用于处理的衬底支撑在各个室中,因而,机械手120可以用于将衬底传递到用于各个室的衬底支撑,并且机械手120还可以用于将衬底从一个室传输到另一个以用于后续处理步骤。可用于此实施例中的示例性衬底支撑元件或头组件在本文中参考图2-7进行进一步的说明。在这种实施例中,衬底被支撑为面朝下的结构用于处理,因而,如果主机机械手120没有接触衬底的产品面,则将衬底从主机机械手120传递到衬底支撑通常需要中间支撑步骤。在衬底被支撑为面朝上的结构用于处理的实施例中,主机机械手可以将衬底定位在各个室中以便处理和收回。可以使用的示例性处理室可以在共同受让的美国专利No.6,258,223以及共同受让的美国专利申请No.10/036,321中找到,前者授权于2001年7月10日,题为“In-Situ Electroless Copper Seed LayerEnhancement in an Electroplating System”,后者提交于2001年12月26日,题为“Electroless Plating System”,二者的全部内容通过引用而结合于此。
图2图示了本发明的无电沉积平台200的另一种实施例。图2所示的实施例大体上类似于图1所示的实施例,因此,在适当位置已经使用了共同的编号。但是,平台200包括定位在每个处理室位置102、104与处理室位置110、112之间的衬底头组件202(将在下文中进一步讨论)。头组件202通常可枢转地安装在点点204处并具有从其延伸的衬底支撑组件206。头组件202的枢转运动使支撑组件206在邻近定位的室位置(室位置102、104或室位置110、112)之间运动,如箭头“A”所指示。因此,在这种结构中,主机机械手120可用于将衬底定位在头组件202上,然后可以用所述头组件202将衬底在活化室位置102、112与无电沉积室位置104、110之间传输。这种结构提供了衬底从活化室(例如室位置112)到无电沉积室(例如室位置110)的有效传输、在传输期间活化层的污染最小,并使主机机械手120能够对电镀溶液保持清洁。
图3图示了本发明的无电沉积处理平台300的另一种实施例。平台300类似于图2所示的平台,同样,在适当的位置保留了编号。平台300包括流体沉积处理外壳302,所述外壳302定位成对活化室位置102、112和无电沉积室位置104、110进行封闭。处理外壳302通常包括定位在处理主机113上、具有至少一个操作端口304的环境控制外壳,所述操作端口304例如狭缝阀门定位使得主机机械手120可以对各外壳302进行选择性操作,以从其插入或取下衬底。
处理外壳302连接到处理气源306,所述气源306定位成与其流体连接。处理气源306设置为向处理外壳302内部提供处理气体。更具体地说,气源306可以设置为在衬底处理步骤之前、之中或之后向处理外壳302的内部提供惰性的气体,例如氮、氦、氩、氢、其混合物或半导体处理中常用的其他气体。更具体地说,在衬底处理步骤之前,例如,可以向处理外壳302持续地供给处理气体并由排气系统或泵(未示出)从所述处理外壳302排出。当打开操作端口304以从处理外壳302插入或取下衬底时,流向处理外壳302的处理气体可能增加,使得维持处理气体从操作端口302向外正流动。处理气体向外的正流动使衬底插入外壳和从外壳取下的过程中进入处理外壳302的氧气最小化。一旦关闭操作端口304并将衬底定位于处理外壳302中用于处理,例如,就可以减少处理气体流动并对处理外壳的内部进行净化。净化处理包括持续地使处理气体流入处理外壳302并由排气口或泵从处理外壳302排出处理气体。处理气体的这种持续流动和排出起着从处理外壳清除残余氧气的作用。在本发明的实施例中,处理气体流通常被引入处理位置上方的处理外壳302上部。处理气体向下流向各处理位置并从各处理位置中或其下方位置处的处理外壳抽气或排出。
向处理外壳302供给处理气体的典型处理可以包括以约10slm到约25slm之间的流率供给惰性的气体,或者更具体地说,在约12slm到约20slm之间。当处理外壳关闭,即当操作端口304关闭时,惰性的气体的流率可以减小。处理外壳302还可以包括真空泵(未示出),所述真空泵定位成与处理外壳302的内部体积流体连接。真空泵可以用于通过清除抽气过程进一步减少处理体积中存在的不期望的气体。处理外壳302的内部还可以选择性地与制造设备排气系统流体连接。因此,排气系统可以用于从处理外壳302内部排出或抽出处理气体,以防由于在密闭体积中引入处理气体而造成外壳增压。系统控制器111可以用于控制从处理外壳引入和去除处理气体的速率,使处理外壳302内部的环境得到控制。此外,如果特定的处理技术需要进一步的环境控制,发明人预期可以将其他控制机构例如加热器、冷却器、空气过滤器或净化器、加湿器等包括在处理外壳302内部或与其相连并由控制器111控制。
对于图1-3所示的平台的化学品结构,这种结构的平台通常使用一次性使用的化学品室,即一份处理化学品将用于一个衬底,然后被丢弃而不用于处理另外的衬底。例如,平台200和300可以使用共同的室来对衬底进行活化、清洁和/或后处理。由于这些处理每个都可能使用不同的化学品,所以室通常设置为在需要时向衬底供给所需的每种化学品。但是,室通常不设置为重新收集化学品,因为从一个室中重新收集不同的化学品可能存在实际的污染问题。
例如,处理室位置102、112可以设置为活化室和清洁室,而处理室位置104、110可以设置为无电沉积室。在这种设置中,首先将衬底定位于活化/清洁室位置102、112,在该处,衬底可以具有分配于其上的预活化清洁溶液、清洗溶液和/或活化溶液。在使用预活化清洁溶液的实施例中,通常在使用清洁溶液之后对衬底进行清洗,以使衬底表面在使用活化溶液之前没有清洁溶液。一旦使用了活化溶液,通常将衬底从活化/清洁室位置102、112传输到无电沉积室位置104、110。室位置104、110设置为将无电沉积溶液分配到衬底上,以在其上沉积期望的层。一旦无电沉积处理完成,则可以将衬底传输回活化/清洁室,在该处,在衬底上对其进行后沉积清洁处理。一旦后沉积清洁处理完成,则可以将衬底运送到斜边清洁室位置106、108之一或旋转清洗干燥室位置114、116之一。由于无电沉积室位置104、110在这个实施例中没有使用不同的化学品,无电室可以设置为多用化学品室,例如可以将用于该室的化学品重新收集并重新用于多个衬底,直到化学品特性不再适用于处理。不过,如果愿意,沉积室可以用于另外的处理,例如后沉积清洁处理。在这种结构中,沉积室通常将设置为一次性使用型的化学品室,因为重新收集的溶液混合物通常不适用于后续的处理。
图3A图示了本发明的无电沉积平台350的另一种实施例。图3A类似于图3,因此,在适当的位置保留了两图之间的编号。与图3所示一样,平台350包括处理外壳302,但是外壳302中的元件在此实施例中设置不同。例如,用附图下部的外壳302来讨论(平台350对面一侧的外壳302包括相同但是镜像的结构),处理室位置112包括专用头组件353,它设置为处理室位置112服务。类似地,处理室位置110包括专用头组件352,它设置只为处理室位置110服务。因此,在这种结构中,衬底梭351定位和设置为从主机机械手120接收衬底。将衬底定位于梭351上,梭351枢转到头组件352、353之一下面的位置。各个头组件352、353降低到定位在梭351上的衬底正上方的位置,头组件通过真空夹具、重力或半导体处理领域中已知的其他衬底固定处理来与衬底接合并将其固定到所述头组件。一旦衬底被固定到头组件352、353,梭351即可从头组件352、353下方枢转出去。
然后,头组件352、353可以将衬底降低到各个处理室位置110、112中用于流体处理步骤。一旦流体处理步骤结束,就可以由头组件352、353通过将衬底抬高离开流体而将衬底从流体中取走。此后,梭351可以枢转,使得其定位于衬底之下,头组件352、353可以降低,以将衬底定位于梭351上,并解除真空夹紧力以释放衬底使之由梭351支撑。可以抬高头组件352、353并使梭351枢转到邻近的处理室,在该处,可以进行另一个流体处理步骤,或者,梭351也可以定位使得主机机械手120可以从处理外壳302取出衬底。
图3A所示的部件结构可以在无电沉积处理中实施。例如,处理室位置102和112可以设置为进行无电预清洁处理、无电活化处理和无电后活化清洁处理,而处理室位置104、110可以设置为无电沉积室和无电后沉积清洁室。在这种结构中,可以进行对来自各个处理的化学品的回收。图3A所示结构的一个优点是衬底可以在惰性环境中从活化溶液传输到无电沉积溶液,因为用于流体处理室位置102、104、110、112的处理空间在环境受控的处理外壳302中,即在传输步骤期间操作端口304保持关闭,因此,处理外壳中的氧含量可以被控制并维持在较低程度。此外,处理外壳302充满来自气源306的惰性的气体,因此,处理外壳302内部具有大大降低的氧气百分率,例如氧气小于约100ppm,或者更具体地说,氧气小于约50ppm,或者再进一步,氧气小于约10ppm。此外,处理室位置、梭351和头组件352、353的设置允许衬底在小于约10秒钟的时间内从活化室传输到无电沉积室。这些处理都有助于基本防止将要由无电处理来镀的表面在沉积处理本身之前就被氧化。
通常,图3和图3A所示的本发明的实施例可能用于相容或不相容的化学品。例如,在使用不相容的化学品例如酸性和碱性溶液的处理程序中,酸性溶液通常唯一地用于一个室中,而碱性溶液唯一地用于另一个室中。这些室可以邻近定位,衬底可以由梭之一在各个室之间传输。当使用相容的化学品时,可以用一个流体处理室进行处理的每个步骤。例如,可以用一个室来进行预清洁衬底、活化衬底、清洁活化后的衬底、进行无电沉积处理以及进行后沉积清洁处理。此外,当使用不相容的化学品时,衬底可以在第一室中进行处理,然后在将衬底传输到使用与第一室中的化学品不相容的化学品的另一个流体处理室之前,在该室或另一个邻近定位的清洁室中进行清洗或清洁。清洗步骤可以在衬底在使用不相容化学品的后续室中进行处理之前,将不相容的化学品从衬底表面除去。此外,发明人预期清洗步骤优选地在原位进行,即在使用最初的化学品的同一个室中,因为这种结构使化学元素对处理系统中其他元件例如衬底梭351造成污染的可能性减至最小,所述化学元素是后来可能与到达梭351上的其他污染物反应的。
图4和5图示了本发明的无电沉积平台400的另一种实施例。沉积平台400通常包括与图1-3A中所示平台类似的平台特征,因此,在适当的位置保留了编号。但是,平台在平台400的室位置102、104、110、112处有部分差异。更具体地说,平台400包括与供气源406相连的外壳402,以及用于将衬底插入外壳和从其中取出的操作端口404,它们的样式与前述平台类似。但是,与平台300中外壳302中图示的两个处理位置相比,例如,平台400在每个外壳402中包括四个处理位置。外壳402中的四个处理位置包括室位置414、416、418、420。这些处理位置可以设置为活化室、清洁室、清洗室和无电沉积室的组合。例如,室位置414和418可以设置为活化室,室位置416和420可以设置为无电沉积室(这些室的结构和设置将在下文中进一步讨论)。在这种设置中,平台400还包括第一衬底传输梭408(也图示于图8中),它定位成在外部处理室位置414、418(即定位于最接近主机机械手120的室)之间传输衬底。在这种设置中,梭408可以用于从主机机械手120接收衬底并将衬底传输到室位置414、418之一以便处理。类似地,梭可以用于从室位置414、418取下衬底,以使主机机械手120可以从外壳120取出衬底。
衬底梭408在图8中有更详细的图示,它通常包括可枢转地安装的臂元件804(安装在枢轴点802处),所述臂元件804包括远侧的衬底支撑表面806。衬底支撑表面806设置为通过与衬底外周边的接触将衬底支撑为面朝下的方式,以免损坏衬底的产品面。一旦衬底定位于衬底支撑表面806上,臂就可以枢转到处理室位置414、418之一上方的位置,头组件可以在该处将衬底从支撑表面806取走用于处理。
衬底支撑头组件410、412通常定位在各个处理室位置418、420与414、416之间。这些头组件410、412通常设置为在定位于头组件410、412每一侧的处理室之间传输衬底并在各个室中处理期间支撑衬底。例如,头组件410设置为在处理室418与处理室420之间传输衬底,类似地,头组件412设置为在处理室414与处理室416之间传输衬底。
尽管此处图示的头组件被一般地图示为面朝下形式的头组件,但本发明的实施例不应当限定为这种结构。例如,本发明的头组件可以设置为将衬底支撑为面朝上设置,如本领域一般所知的。类似地,尽管此处图示的处理室被一般地图示为以面朝下设置接收和处理衬底,但本发明的实施例不应当限定为这种结构,因为处理室可以设置为面朝上或面朝下型处理室。
在图4和5图示的平台设置中,头组件410、412可以用于以如下方式支撑单一化学品无电沉积设置。例如,处理室位置414、418可以设置为活化/清洗室,处理室位置416、420可以设置为无电沉积室。在这种设置中,衬底可以由主机机械手120传递到处理外壳402。之后,衬底可以由梭408输送到活化和清洗室位置414、418之一,头组件410、412之一在该处支撑衬底以便处理。在活化清洗室位置414、418,可以在活化之前对衬底进行清洁和/或清洗。之后,可以将无电活化溶液分配到衬底表面上。一旦衬底表面被活化,即可对其进行清洗和/或清洁并由相应的头组件410、412传输到无电沉积室416、420,衬底表面可以在该处暴露于无电沉积溶液以便沉积。一旦沉积处理结束,即可由头组件410、412将衬底传输回活化/清洗室位置414、418,如果需要,可以用于另一个活化层,或者用于清洗处理。如果需要另外的沉积,可以将活化的衬底输送到另一个沉积室用于进一步处理。如果需要的沉积处理结束于此处,则可以由梭408从活化室位置414、418取下衬底,然后接着由主机处理机械手120从外壳402取下。在这种结构中,可以经过外壳402同时处理两个衬底,即一个衬底使用室位置414、416,同时第二个衬底使用室位置418、420。
但是,在本发明的另一种实施例中,图4和5所示的平台可以设置为单一衬底多化学品处理外壳。更具体地说,外壳402可以设置为用每个室位置414、416、418、420处理一个衬底。每个室可以包括不同的化学品,例如酸性无电沉积和/或活化化学品以及碱性无电沉积和/或活化化学品。在这种实施例中,可以首先将衬底定位于设在室位置418处的活化室中,在该处,降温或升温头组件可以用于在将酸性反应预清洗化学品分配到衬底上的同时支撑衬底。降温头组件可以包括设置为吸热元件的衬底支撑表面,例如使冷却流体流经头组件的内部部分以降低衬底支撑表面的温度。升温头组件可以包括具有定位于其内的流体加热器或电阻加热器的衬底支撑表面,所述加热器设置为控制衬底支撑表面的温度。然后可以将衬底传输到定位在室位置420处的无电活化室,在该处将酸性活化溶液分配到衬底上。之后,衬底可以回到室位置418用于后活化清洁处理,然后可以将衬底(通过梭408和头组件412)传输到室位置414处的强碱性或碱性的预清洁室,在该处将强碱性或碱性清洁溶液分配到衬底表面上。
支撑衬底用于酸性活化、清洁或沉积处理的头组件412可以包定位在其中的加热器,所述加热器设置为加热头组件的衬底支撑表面,并从而在活化、清洁或沉积处理中加热衬底。加热的清洁处理还可以包括将清洁流体加热到例如约80℃到约90℃之间的温度,和/或将与衬底接触的支撑元件加热到上述加热后温度。然后可以在衬底回到室位置414用于后处理(即后沉积清洗和/或清洁)之前将衬底传输到室位置402处的无电沉积室,所述无电沉积室可能还包括碱性或强碱性无电溶液。在这种实施例中,每个单独的室可以包括特定的化学品,例如活化化学品、无电化学品、预清洁化学品等等,这使室中的化学品可以用于不止一个衬底,因为与在单个室中交叉化学品污染有关的问题被消除了。
图6图示了本发明的示例性流体处理室600和头组件604下部的局部剖视立体图。流体处理室600可以在此处所述的任意实施例中用作无电沉积室、活化室和/或清洁/清洗室。流体处理室600通常包括室体602,它具有可动地定位在室体602上方的头组件604。室体可以由已知不与流体处理(无电或ECP)溶液反应的各种物质来制造,例如塑料、聚合物和陶瓷。头组件604也图示于图7中,它通常包括衬底支撑元件606,所述衬底支撑元件606设置为转动、水平或枢转地动作以及垂直地动作,并且其尺寸适于容纳在室体602的开口中。衬底支撑元件606包括基本平面的支撑表面608,它通常也称为压板,其中具有形成于其中的多个真空孔610。支撑表面608可以镀有不与流体处理溶液发生反应的材料或由其制成,例如陶瓷或塑料。真空孔610选择性地与真空源(未示出)流体连接,同样,真空孔610可以用于将衬底614真空吸附到衬底表面608。环形密封件621,例如o形圈型的密封件,定位在衬底支撑表面608的周边附近。密封件621通常设置为接合到真空吸附到衬底支撑表面608上的衬底614的背面,以在衬底支撑表面608与衬底614之间产生真空密封以便真空吸附处理,同时还防止流体接触到衬底背面。
衬底支撑元件606的内部可以包括加热器组件,所述加热器组件可以包括多个集中布置的加热带612。加热带612可以包括电阻加热器、设置为使被加热的流体流过其的流体通道,或半导体处理方法所用的加热衬底支撑元件的其他方法。如果需要,可以对多个加热带612进行独立的控制,以在处理过程中更精确地控制衬底温度。更具体地说,对加热带612的独立控制允许对沉积温度的精密控制,这对于无电沉积处理是关键的。衬底支撑元件606还可以包括设置为在处理期间向衬底614赋予兆声(megasonic)或其他振动能量的激励器或振动器件(未示出)。
室体602的底部中心部分包括流体处理盆615。盆615通常包括基本平面的盆表面616,所述盆表面616具有围绕在盆表面616周围的环形流体堰618。流体堰618通常具有约2mm到约20mm之间的高度,并通常设置为使处理流体在处理区域620中的盆表面616上维持泥浆式(puddle-type)设置。盆表面616还包括形成于其中的多个流体孔622。流体孔622通常与多个处理流体源流体连接,所述处理流体源例如清洗溶液源、活化溶液源、清洁溶液源、无电沉积溶液源以及可以用于无电沉积处理中的其他流体源。因此,孔622可以用于向处理区域620供给处理流体。处理流体通常将向上流经孔622,然后向外经过处理区域620流向堰618,如箭头“B”所示。流体排出管624通常定位在室体602外侧下部,通常在流体堰618的外侧。因此,流体排出管624设置为收集溢出堰618的流体。
头组件604也图示于图7中,它通常包括可枢转地安装到处理主机113的垂直安装柱714,通常位于两个处理室之间的位置处,即头组件604定位成使得柱元件714可以围绕轴704转动以将衬底支撑元件606选择性地定位在每个邻近定位的处理室上。头组件604还包括结构臂元件716,所述结构臂元件716安装到柱元件714并从其延伸。结构臂元件716可移动地定位到柱元件714,即臂元件716的垂直位置可以由例如齿轮装置相对于柱元件714调整,所述齿轮装置中第一齿轮电机708与柱714侧面上的垂直轨706啮合,以使臂元件716沿着轨706选择性地垂直移动。第二电机712定位在臂元件716上并与衬底支撑元件606相连。第二电机设置为向衬底支撑元件606赋予旋转运动。
在本发明的另一种实施例中,头组件604可以额外地设置为使衬底支撑元件606倾斜,即不止是垂直、枢转(水平)和转动运动衬底。在这种实施例中,第二电机712的电机轴线可以定位在衬底支撑元件606的转动轴线上,电机712和衬底支撑元件606的组合可以绕轴线718枢转地安装到臂元件716。这种设置使衬底平面可以在处理步骤之前、期间或之后由水平倾斜以便例如需要时进行倾斜浸没处理。
在本发明的另一种实施例中,头组件604可以包括多区真空吸附式衬底支撑表面,它设置为对衬底背面上多个区上的吸附力进行控制。通常,这种类型的头组件使用定位在衬底支撑表面上的薄膜,薄膜定位成靠在衬底背面并在周边处密封。然后在衬底支撑表面与薄膜之间施加真空,从而使薄膜被拉向衬底支撑表面并进入形成于其中的一个或多个凹陷中。这在薄膜与衬底之间产生了真空,用于将衬底吸附到薄膜和衬底支撑表面。对使用薄膜来吸附衬底的头组件的详细说明可以在共同受让的美国专利No.6,183,354中找到,它提交于1997年5月21日,授权于2001年2月6日,题为“Carrier Head with Flexible Membrane for a Chemical MechanicalPolishing System”,其全部内容通过引用而结合于此。
在操作中,本发明的实施例,具体地说是平台400,可以用于通过无电沉积处理在衬底上沉积覆盖层。这种处理开始于用平台接收带有介质层的衬底,所述介质层具有形成于介质层中的特征以及在其上填充特征的导体材料(通常是铜)。此外,衬底通常具有基本平面的产品面,它将介质层暴露于场效应区和填充特征的铜的上表面。介质层和特征的基本平的上表面的原因通常是完成了化学机械抛光处理或通常在另外的处理平台上进行的其他后特征填充平面化处理。
衬底126由装载台134之一接收到平台400中并由机械手132输送到处理室位置114、116之一。在通常设置为衬底旋转清洗干燥室的处理室位置114、116处,可以用清洁溶液对衬底126进行初始清洗和/或清洁。或者,可以使衬底126简单地通过室位置114、116并由主机机械手120拾取。主机机械手接合衬底126并通过例如处理阀门404将衬底传输到处理外壳402。在传输处理期间,处理气源406使惰性的气体流入处理外壳402内部,所述惰性的气体通常是氮气或氮气与另一种气体例如氢气的混合物。此气流通常用于用惰性的气体充满处理外壳402的内部,并在接收衬底的同时使通过开启的操作阀门404进入处理外壳不期望的含氧的环境空气减至最小。
一旦将衬底126插入处理外壳402中,衬底126就被以面朝下取向定位在衬底梭408上。主机机械手托板120从处理外壳402缩回,操作阀门404关闭。如果需要,处理气源可以用氮气继续将处理外壳402的内部体积充满一段时间,以便进一步减小处理外壳402中的氧气含量。这可以通过将与处理空间402内部相连的一个或多个排气口或排气通道向环境开启而实现。
在衬底126定位在梭408上并且处理外壳用氮气充满的情况下,处理继续,用梭408将衬底126输送到头组件412。更具体地说,梭408的枢转使衬底126定位于头组件412下方,头组件412将衬底支撑表面608降低到紧挨着衬底126背面的位置,如同它位于衬底梭408上一样。可以使衬底支撑表面608与衬底126的背面接触。一旦表面608定位成紧挨着衬底126的背面,即可使真空孔610动作,将衬底126真空吸附并密封到支撑表面608。然后,头组件412将衬底126垂直升高离开梭408,梭408枢转离开衬底126。
然后,可以将衬底126降低到处理室位置414的流体盆620中,在该处可以通过将介质清洁溶液施加到衬底126而对衬底126进行清洁。介质清洁溶液可以包括一种或多种酸(例如柠檬酸、HF和/或HCl)并可以包括一种或多种阻蚀剂。阻蚀剂可以包括各种化合物中的任意一种,例如包含唑基的有机化合物如苯并三唑、巯基苯并三唑或5-甲基-1-苯并三唑中。介质清洁步骤可以在加热器612动作使衬底温度在约20℃和约60℃之间的情况下进行。
通常,介质清洁溶液设置为从介质层的暴露部分除去金属残余物。也可以理解,阻蚀剂在介质清洁处理期间保护铜层的暴露部分。如果未除去金属残余物,则通常会在介质上的这些金属残余物上发生不期望的无电沉积。
在本发明的另一种实施例中,在已进行介质清洁步骤的情况下,将衬底传递到处理平台400。在这种实施例中,本发明的处理步骤将简单地跳过介质处理步骤而前进到铜清洁步骤,这将在下面进行说明。
一旦介质清洁步骤完成,则处理继续进行到铜清洁处理。这部分处理通常也是在处理室414中进行的。更具体地说,可以升高头组件412以将衬底126从处理流体中取出,然后处理流体可以从介质清洁溶液改变为铜清洁溶液。一旦将铜清洁溶液定位于处理体积620中,即可将衬底126降低到溶液中。一种适当的铜清洁溶液示例是可以从加利福尼亚州SantaClara的Applied Materials,Inc.购买到的Electra CleanTM溶液。另一种适当的铜清洁溶液示例包括硫酸和HCl。另一种适当的铜清法溶液示例包括柠檬酸和过氧化氢的混合物。
铜清洁溶液通常设置为除去铜氧化物和任何残余的介质清洁溶液。例如,铜清洁溶液可以除去残留在铜层的暴露部分上的介质清洁溶液的阻蚀剂。残留在铜层的暴露部分上的阻蚀剂可能阻止覆盖材料在后续处理步骤中形成和/或粘附于其上。在一种实施例中,由铜清洁溶液刻蚀的铜层厚度小于约50埃,优选为小于约30埃,蚀去的介质层厚度小于约50埃,优选为小于约30埃。
在铜清洁步骤后,衬底由头组件412传输到处理室416,在该处可以将活化溶液施加到衬底结构。处理室416类似于处理室414(如图6所示),因此,将跳过头组件412将衬底126浸没在处理体积420中的具体情况。可用于活化室位置416中的活化溶液的一种示例包括钯盐。钯盐的例子包括氯化物、溴化物、氟化物、氟硼酸盐、碘化物、硝酸盐、硫酸盐、羰基物、金属酸盐及其组合。优选的钯盐是氯化物,例如氯化钯(PdCl2)、氯铂酸(H2PtCl6)及其组合。铜清洁溶液施加到室位置414中的结束时间与活化溶液施加到室位置416中的开始时间之间的等待时间通常小于约15秒,优选为小于约5秒。因此,头组件412从室位置414中的铜清洁溶液无延迟地直接移动到室位置416中的活化溶液。
活化溶液通常用于将活化金属种层沉积到特征中暴露的铜上。因而,铜层暴露部分的氧化在其清洁后可能不利于将金属种层沉积到铜层暴露部分上方,因为已知铜的氧化物比铜具有更高的电阻率。铜清洁与活化之间较短的等待时间使氧化减至最少,同时惰性的气体环境也有助于防止铜层的暴露部分氧化。
一旦活化处理完成,即可将衬底126移回室位置414或室位置416,在该处可以通过将后活化清洁溶液施加到衬底126来进行后活化清洁。后活化清洁溶液可以包括一种或多种酸(例如柠檬酸、HF和/或HCl)。施加活化溶液的结束时间与施加后活化清洁溶液的开始时间之间的等待时间可以小于约15秒,优选为小于约5秒。
后活化清洁溶液通常用于从介质层的暴露部分除去任何活化金属种层,以使活化金属种层只保留在铜层的暴露部分上。留在介质层的暴露部分上的活化金属种层可能在其上引起覆盖材料的不期望的无电沉积。
一旦活化层得到清洁,就将衬底传输到室位置420,在该处可以通过将无电沉积溶液施加到衬底结构,在暴露的铜层的活化部分上方进行选择性的无电沉积而沉积覆盖层。覆盖层可以包括CoP、CoWP、CoB、CoWB、CoWPB、NiB或NiWB,并优选为包括CoWP或CoWPB。无电沉积溶液可以包括一种或多种金属盐和一种或多种还原剂,这取决于待沉积的覆盖层材料。如本领域通常所知的,无电沉积溶液还可以包括pH调节成分,例如酸或碱。
当选择的覆盖层包含钴时,无电沉积溶液通常包括钴盐。钴盐的例子包括氯化物、溴化物、氟化物、氟硼酸盐、碘化物、硝酸盐、硫酸盐、羰基物、金属酸盐及其组合。优选的钴盐包括硫酸钴、氯化钴或其组合。如果要沉积含钨的覆盖材料,则无电沉积溶液包括钨盐。钨盐的例子包括氯化物、溴化物、氟化物、氟硼酸盐、碘化物、硝酸盐、硫酸盐、羰基物、金属酸盐及其组合。优选的钨盐包括钨酸盐,例如钨酸铵或钨酸四甲基铵。优选的钨盐包括钨酸铵。如果要沉积含镍的覆盖材料,则无电沉积溶液包括镍盐。镍盐的例子包括氯化物、溴化物、氟化物、氟硼酸盐、碘化物、硝酸盐、硫酸盐、羰基物、金属酸盐及其组合。
当选择的覆盖材料包含磷时,例如CoP、CoWP或CoWPB,则还原剂优选为包括磷化合物,例如次磷酸钠。如果覆盖材料包括硼,例如CoB、CoWB、CoWPB,则还原剂通常包括硼化合物,例如硼氢化钠、二甲胺硼烷(DMAH)或其组合物。除了上述还原剂之外或作为选择的大还原剂,也可以使用其他的还原剂,例如联氨。
无电沉积溶液和/或衬底可以加热到约40℃到约85℃之间的温度。一方面,加热无电沉积溶液和/或衬底结构增加了无电沉积率。在一种实施例中,覆盖材料的沉积率约为100埃/分钟或更高,优选为约200埃/分钟或更高。在一种实施例中,覆盖材料沉积的厚度在约100埃到200埃之间,优选为约150埃。但是,重要的是将整个衬底上的温度维持在一个均匀的温度,因为众所周知无电处理的沉积率高度取决于温度。因此,可以使用图6所示的加热器612的环形带和/或温度受控的处理流体供应源。
一旦通过无电沉积处理形成了所需厚度的覆盖层,即可通过对衬底结构进行后沉积清洁而进行后沉积清洁步骤。后沉积通常在室418中进行,因此,衬底可以由头组件410传输到该处。在一种实施例中,后沉积清洁可以包括一种或多种酸(例如柠檬酸、HF和/或HCl)。后沉积清洁通常设置为除去介质层的暴露部分上存在的覆盖材料。
一旦后沉积清洁步骤结束,即可将衬底126从处理外壳402取出。这通常包括头组件410将衬底126传输到衬底梭408,以及主机机械手120进入外壳402并从梭408取下衬底126。
此后,主机机械手可以将衬底传输到处理室位置106、108之一用于斜边清洁处理,在该处可以通过向斜边缘提供刻蚀溶液对衬底126的斜边缘进行清洁以从其除去堆积的材料(常称为边珠)。刻蚀溶液的一个例子包括硫酸、过氧化氢和去离子水的溶液。刻蚀溶液的另一个例子包括硝酸溶液。在本发明的一种实施例中,处理室位置106、108不包括斜边清洁台,或者更确切地说,可以将如此处所述的可用于活化和沉积的另一个处理外壳定位在位置106、108。
一旦斜边清洁处理结束,则通常由主机机械手120将衬底126传输到处理室114、116之一,在该处进行衬底的清洗和干燥处理。在一种实施例中,可以在旋转清洗干燥室中对衬底结构进行干燥,在另一种实施例中,由蒸汽干燥室对衬底结构进行干燥。蒸汽干燥包括将减小表面张力的挥发性化合物(例如挥发性有机化合物(VOC))引入衬底结构。例如,可以用载运气体(例如氮气)将VOC引入粘附到衬底结构的液体附近。引入VOC引起表面张力梯度,它使液体流动离开衬底而使之干燥。在一种实施例中,VOC是异丙醇(IPA)。一个方面,由蒸汽干燥对衬底结构进行干燥减少了其他干燥方法在衬底上留下的水印的形成。
一旦衬底126得到清洗和干燥,则用机械手132将衬底126传输到退火台135。然后对衬底126进行退火以帮助将吸收进介质层或金属层的小孔中的任何水分或湿气除去。可以由电阻加热器或加热灯将衬底结构加热到约200℃到约350℃之间的温度。
尽管前述针对的是本发明的实施例,但是在不脱离本发明基本范围的情况下,可以设计出其他的以及进一步的实施例,本发明的范围由所附权利要求来确定。
Claims (22)
1.一种用于半导体处理的流体沉积系统,包括:
主机,所述主机具有定位在其上的衬底传输机械手;以及
定位在所述主机上并且对于所述衬底传输机械手是可操作的至少两个衬底处理外壳,每个所述衬底处理外壳具有定位在其中的至少一个衬底流体处理室。
2.根据权利要求1所述的流体沉积系统,其中,所述至少一个衬底流体处理室包括定位在所述衬底处理外壳中的彼此邻近的无电流体活化室和无电流体沉积室。
3.根据权利要求2所述的流体沉积系统,还包括定位在所述无电流体活化室与所述无电流体沉积室之间的衬底传输梭,所述衬底传输梭设置为将衬底在所述无电流体活化室与所述无电流体沉积室之间传输。
4.根据权利要求2所述的流体沉积系统,其中,所述无电流体活化室和所述无电流体沉积室各包括衬底支撑元件,所述衬底支撑元件设置为在相应室中的流体处理期间支撑衬底,所述衬底支撑元件中具有温度控制组件。
5.根据权利要求4所述的流体沉积系统,其中,所述温度控制组件包括定位在所述衬底支撑元件中的多个独立控制的加热元件。
6.根据权利要求1所述的流体沉积系统,还包括与所述衬底处理外壳流体连接的处理气源和处理气体排出系统。
7.根据权利要求1所述的流体沉积系统,还包括定位在所述主机上的衬底清洁室。
8.根据权利要求6所述的流体沉积系统,还包括系统控制器,所述系统控制器设置为对所述处理气源和所述处理气体排出系统进行控制,以在所述衬底处理外壳中产生小于约100ppm的氧气含量。
9.根据权利要求6所述的流体沉积系统,其中,所述处理气源包括氮气源、氦气源、氩气源和氢气源中的至少一个。
10.根据权利要求1所述的流体沉积系统,还包括定位成与所述主机相连的退火台。
11.一种无电流体处理组件,包括:
定位在衬底处理系统上的衬底处理外壳,所述衬底处理外壳具有操作端口,所述操作端口设置为使得可以由外部机械手对所述处理外壳的内部部分进行操作;
定位在所述处理外壳的所述内部部分的无电活化室;
定位在所述处理外壳的所述内部部分的无电沉积室;
定位在所述处理外壳的所述内部部分中、所述无电活化室与所述无电沉积室之间的衬底传输梭。
12.根据权利要求11所述的无电流体处理组件,还包括:
与所述处理外壳的所述内部部分有选择性流体连接的处理气体供应;
与所述处理外壳的所述内部部分有选择性流体连接的处理气体排出系统;以及
与所述处理气体供应和所述处理气体排出系统电连接的控制器。
13.根据权利要求12所述的无电流体处理组件,其中,所述控制器设置为对所述处理气体供应和所述处理气体排出系统进行协同控制,以在衬底处理期间在所述处理外壳的所述内部部分中产生小于约100ppm的氧气含量。
14.根据权利要求11所述的无电流体处理组件,其中,所述无电活化室与所述无电沉积室中的至少一个包括加热的衬底支撑元件。
15.根据权利要求14所述的无电流体处理组件,其中,所述加热的衬底支撑元件包括设置为支撑衬底以便处理的基本平面的衬底支撑压板,所述压板具有定位在其中的多个独立控制的加热源。
16.根据权利要求11所述的无电流体处理组件,还包括定位成与所述衬底处理系统相连的退火台。
17.一种用于在半导体衬底的层上无电沉积金属的方法,包括:
将衬底定位于设在衬底处理外壳中的流体处理室中;
同时地使处理气体流入所述衬底处理外壳和将所述处理气体从所述衬底处理外壳排出,以在所述衬底处理外壳中产生小于约100ppm的氧气含量;
将活化溶液分配到所述流体处理室中的所述衬底上;
将无电沉积溶液分配到所述流体处理室中的所述衬底上;以及
从所述衬底处理外壳取出所述衬底。
18.根据权利要求17所述的方法,其中,分配活化溶液还包括:
将清洁溶液在所述活化溶液之前分配到所述衬底上;
将清洗溶液在所述活化溶液之后分配到所述衬底上。
19.根据权利要求17所述的方法,其中,将无电沉积溶液分配到所述衬底上还包括在所述活化溶液之后将清洁溶液和清洗溶液中至少一个分配到所述衬底上。
20.根据权利要求17所述的方法,还包括在分配所述活化溶液和分配所述无电沉积溶液中至少一个的过程中用加热的衬底支撑元件支撑所述衬底,以在相应的分配过程中控制所述衬底的温度。
21.根据权利要求17所述的方法,其中,分配所述活化溶液包括将所述衬底定位于设在所述衬底处理外壳中的无电活化室中。
22.根据权利要求21所述的方法,其中,分配所述无电沉积溶液包括将所述衬底定位于无电沉积室中,所述无电沉积室定位在所述衬底处理外壳中的所述无电活化室附近。
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US6913651B2 (en) * | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
US20030190426A1 (en) * | 2002-04-03 | 2003-10-09 | Deenesh Padhi | Electroless deposition method |
US6616967B1 (en) * | 2002-04-15 | 2003-09-09 | Texas Instruments Incorporated | Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process |
US6528409B1 (en) * | 2002-04-29 | 2003-03-04 | Advanced Micro Devices, Inc. | Interconnect structure formed in porous dielectric material with minimized degradation and electromigration |
US6699380B1 (en) * | 2002-10-18 | 2004-03-02 | Applied Materials Inc. | Modular electrochemical processing system |
JP4245996B2 (ja) | 2003-07-07 | 2009-04-02 | 株式会社荏原製作所 | 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置 |
KR101109299B1 (ko) | 2003-10-06 | 2012-01-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 페이스-업 습식 프로세싱을 위해 웨이퍼 온도 균일성을강화시키는 장치 |
-
2004
- 2004-03-05 US US10/794,592 patent/US7465358B2/en not_active Expired - Fee Related
- 2004-10-14 US US10/965,220 patent/US7341633B2/en active Active
- 2004-10-14 TW TW093131142A patent/TWI368665B/zh not_active IP Right Cessation
- 2004-10-15 KR KR1020067009430A patent/KR20060097029A/ko not_active Application Discontinuation
- 2004-10-15 CN CNA2004800300528A patent/CN1922344A/zh active Pending
- 2004-10-15 EP EP04795598A patent/EP1685280A2/en not_active Withdrawn
- 2004-10-15 WO PCT/US2004/034456 patent/WO2005038094A2/en active Application Filing
- 2004-10-15 JP JP2006535426A patent/JP4875492B2/ja not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101294291B (zh) * | 2007-04-27 | 2011-12-14 | 环太铜业株式会社 | 电解淀积金属的移载装置 |
WO2009114965A1 (en) * | 2008-03-19 | 2009-09-24 | Acm Research (Shanghai) Inc. | Electrochemical deposition system |
CN106024660A (zh) * | 2015-03-31 | 2016-10-12 | 朗姆研究公司 | 使用无电沉积以突出杂质、残留和不完全导孔蚀刻 |
CN106024660B (zh) * | 2015-03-31 | 2019-03-22 | 朗姆研究公司 | 使用无电沉积以突出杂质、残留和不完全导孔蚀刻 |
CN109314070A (zh) * | 2016-07-01 | 2019-02-05 | 卡本有限公司 | 用于旋涂多层薄膜的具有液体保存特征的方法和系统 |
CN109314070B (zh) * | 2016-07-01 | 2022-10-18 | 卡本有限公司 | 用于旋涂多层薄膜的具有液体保存特征的方法和系统 |
Also Published As
Publication number | Publication date |
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WO2005038094A2 (en) | 2005-04-28 |
US20050084615A1 (en) | 2005-04-21 |
TWI368665B (en) | 2012-07-21 |
EP1685280A2 (en) | 2006-08-02 |
JP2007509236A (ja) | 2007-04-12 |
US20050081785A1 (en) | 2005-04-21 |
TW200523391A (en) | 2005-07-16 |
JP4875492B2 (ja) | 2012-02-15 |
US7465358B2 (en) | 2008-12-16 |
WO2005038094A3 (en) | 2005-08-25 |
KR20060097029A (ko) | 2006-09-13 |
US7341633B2 (en) | 2008-03-11 |
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