TWI343840B - Apparatus for electroless deposition of metals onto semiconductor substrates - Google Patents

Description

1343840 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION Embodiments of the present invention generally relate to an electroless deposition system for use in a semiconductor process. [Prior Art]

The metallization process of the sub-100 nanometer size feature is one of the key technologies for today's and next generation integrated circuit processes. In particular, it is a very large integrated circuit component having an integrated circuit composed of several million logic gates and a plurality of interconnecting wires at the core of the device, wherein the interconnecting wires are generally filled with a conductive material (for example, copper) to a high depth. Formed by a wiring structure within a width ratio (ie, greater than about 2 5 : 1). At this size, conventional deposition techniques, such as chemical vapor deposition (CVD) and physical vapor deposition (PVD), do not reliably fill the interconnect features. Therefore, the electro-bonding technique, that is, electrochemical plating and electroless plating, is considered to be a void-free filled high aspect ratio interconnect characteristic structure of the next 100 nm size. One of the integrated circuit processes. In addition, electrochemical plating and electroless plating are also considered to be useful in the deposition of subsequent deposited layers (e.g., capping layers). However, for electroless plating, conventional electroless plating systems and methods have faced several challenges, such as how to accurately control the deposition process and the defect ratio in the deposited layer. Especially when the impedance heater and the heating lamp in the conventional electroless plating chamber cannot provide uniform temperature to the surface of the substrate, the conventional system will have difficulty controlling the substrate temperature, which is the uniform 1343840 property of the electroless deposition process. . In addition, the conventional electroless plating system does not control the environment in the electroless plating chamber, but it has not been shown to have a substantial impact on the defect ratio. Moreover, based on the consideration of cost-of ownership (c〇〇), it is not only possible to reduce the amount of chemicals and make it enough to cover the surface of the substrate to reduce the waste of expensive chemicals in the electroless plating process. Since the speed and uniformity of the electroless plating solution transported to the surface of the substrate affect the deposition result, a preparation and method are needed to uniformly transport the various treatment solutions. In addition, the temperature of the substrate can be controlled by thermal conduction and thermal convection on the back side of the substrate as the fluid contacts the substrate and flows between the substrate and the substrate support assembly. Since an electroless and efficient integrated platform has not been developed in the electroless plating process, the layers are uniformly deposited with few defects. Therefore, there is a need for an integrated electroless plating apparatus for depositing a deposition layer having good uniformity and having the least defects. [Inventive room] The substrate surface thereof, which is rotated by a fluid side, and the side is a flow member. Embodiments provide an electroless process suitable for treating a substrate comprising a platform assembly located in a processing region, and a rotatable branch assembly positioned in a processing region and having a substrate support for rotatable substrate support assembly Suitable for relative to platform components. The platform assembly comprises: a base member having a flow hole therethrough; a diffusion member densely disposed on the base member and having an "upstream side" and a lower portion, wherein the flow diffusion structure has a plurality of flow passages and is in communication with the upstream weir and the downstream; a flow space 'formed between the base member and the upstream side of the flow diffusion; and a characteristic structure projecting a first distance above the downstream side of the fluid diffusion structure 6 1343840.

Embodiments of the present invention further provide an electroless process chamber suitable for treating a substrate, comprising a platform assembly located in a processing region, and a rotatable substrate support assembly disposed in a processing region and having a substrate A support surface, wherein the rotatable substrate support assembly is adapted to rotate relative to the platform assembly. The platform assembly includes: a base member through which the flow hole penetrates; a fluid diffusion member densely disposed on the base member and having an upstream side and a downstream side; and a fluid space formed on the upstream side of the base member and the fluid diffusion member And a plurality of flow passages formed in the fluid diffusion member, wherein the flow passage is in fluid communication with the upstream side and the downstream side of the fluid diffusion member, and at least the first passage further comprises a fluid communication with the upstream side and having the first load a first characteristic structure of the area, and a second characteristic structure having a second cross-sectional area, wherein the first characteristic structure and the second characteristic structure are in fluid communication with each other.

Embodiments of the present invention also provide an electroless process chamber suitable for treating a substrate, comprising: a rotatable substrate-receiving component disposed in a processing region in an electroless process chamber and having one or more substrates a support surface; a bank located in a processing area and having a first surface, wherein the substrate and/or a substrate positioned on the substrate support surface can be positioned on the first surface and the edge of the substrate A gap is formed therebetween; and a fluid source is adapted to transport the electroless treatment solution to the surface of the substrate disposed on the substrate support assembly. Embodiments of the present invention also provide an electroless process chamber suitable for treating a substrate, comprising: a rotatable substrate support assembly, a processing region in an electroless process chamber, and having one or more radially spaced Providing a substrate supporting feature structure, and each feature structure has a substrate supporting surface; 1343840

a bowl-shaped assembly, located in the treatment zone and having one or more inner walls, forming a fluid space for receiving one or more radially spaced substrate support features and fluids therein; a fluid source, The body space is in fluid communication with the substrate on the substrate support surface; and the primary heat exchanger is in thermal communication with the fluid within the fluid space. Embodiments of the present invention also provide a free-standing chamber suitable for processing a substrate, comprising a platform assembly located in a processing region, and a substrate support assembly that is rotated in a processing region and having a base support surface Where the rotatable substrate support assembly is adapted to rotate relative to the flat member. The platform group includes: a fluid diffusion member having a flow path in which the upstream side, the downstream side, and the plurality of upstream sides are in fluid communication with the downstream side; the first base member through which the first flow hole penetrates, wherein the first base is densely disposed in the fluid diffusion a member, wherein the first flow aperture is in fluid communication with the fluid diffusion member at least in the first direction; and a second member having a second flow aperture, wherein the second base member is densely disposed to the fluid diffusion member, and the first through hole and the fluid diffusion member At least the first pass is fluidly connected. Embodiment 1 FIG. 1 illustrates an embodiment of a system 100. The system 100 has a working interface 130 that includes a plurality of substrate loading stations 134 for attaching the substrate to the cassette. A working interface robot arm 132 is located in the working interface, and the 4 working interface robot arm 132 for accessing and transporting the substrate 126 into and out of the substrate loading station 134 can also extend to a connecting channel 115 connecting the working interface 130 to the platform 113. The working interface arm 132 is provided with an inner wall and a fluid-charged rotatable support set and a base in a component - the flow includes a 130 匣. And the main configuration is at a position of a coffin in the removable substrate loading station 134, and the substrate 126 can be transferred to the gem on the main platform 113. One of the processes to the position 114, 116 or to the annealing chamber 135 . Simultaneously from ^, after the substrate processing procedure is completed, the working interface robot 132 can retrieve the substrate 126 from the crucible to the position 114, 116 or the annealing chamber 135. In this case, the 1乍r® robot arm 132 can transfer the substrate 126 back into the card on the substrate loading station n 134 to remove it from the system 100° metric detection station 105, which can System substrate. The metric detection station 1 〇5 can be used to classify characteristics such as thickness, flatness, and grain characterization. The detection station includes, for example, the BX-300 working interface 130, and also includes 100 before and/or after processing to detect deposition on the substrate. The structure of the material on the 'topography and so on. Implementation of the invention

Advanced interconnect measurement system R, system, and macro scanning electron microscope (CDSEM) or defect re-scanning type S S λ eight electron microscope (Dr_SEM) inspection station, these equipment can be obtained from California Santa Clara Applied Materials (Applied

Materials, Incis Λ θ , , •). Another embodiment of a metrology detection station is described in U.S. Patent Application Serial No. 60/513,310, filed on Oct. 21, 2003, entitled "Plating System with Integrated Substrate Inspection" In the application, it is attached for reference. The annealing chamber 135 generally includes a two position annealing chamber 'one of which is adjacent to a heating plate 137' and a substrate transfer robot 140 is disposed adjacent to, for example, between the two disks. The substrate transfer robot 140 is generally used to move the substrate between the heating plate 137 and the cooling plate 136. System 100 can include a plurality of annealing chambers 135' wherein annealing chamber 135 1343840

Can be configured for stacking. Further, although the annealing chamber 135 is located at the position of the adjacent portion 15, the embodiment of the present invention is not limited to the annealing mode. Therefore, the annealing chamber 135 can be directly connected to and from the main platform robot 120; or, the retreat can be connected to the main platform 113, that is, the annealing chamber 135 is in the same system as the main, but not directly with the main platform. 113 connects the platform robot arm 120 in and out. As shown in Fig. 1, the annealing chamber is connected to the connecting passage 115 and enters the main platform 1 13 by the robot arm 132 and/or. For other related descriptions of the annealing chamber 135, see US Patent Application No. 10/823,849, Two Position Anneal Chamber, application for April 13th of the year, which is attached Reference. The main platform 113 includes a central 120. The main platform robot arm 120 generally includes one or more 124s for supporting and transporting the substrate. In addition, the main platform and the accompanying blades 122, 124 can be independently extended and rotated to move straight, so the main platform robot arm 120 can simultaneously move the plurality of process chamber positions 102, 104, 106 1 1 2, 1 on the base platform 113. 1 4, 1 1 6. Similarly, the working interface robot arm extends, pivots, and vertically moves its substrate support blades. The ability to extend from the working interface 130 to the main platform 113 is mechanically movable. In general, the process chamber locations 106' 108, 110, 112, 114' 116 in the substrate processing system can be any number of stations 1 1 3 of the proximal connection channel chamber 135, ie, the fire chamber 135 can be platform 113 or borrow Directly from the main 1 35, the robot arm 1 2 0 is described with the operator name "Double-fit please be the 2004 platform arm blade 122, the robot arm 1 2 0 I, the shaft rotation and the vertical material in and out of the main '108' 110, F The process chamber has a rotation, and can be along the line 150 line 102, 104. (S) 10 1343840 In particular, the process can be counted as an electrochemical key chamber, a wash chamber, a bevel cleaning to, a spin wash Sugancan room, substrate surface cleaning chamber (the whole includes cleaning chamber, washing chamber to and #刻室 electroless plating chamber (which includes pre-cleaning and post-cleaning chamber, activation chamber, deposition chamber, etc.), measurement station, and/or Other process chambers suitable for deposition process systems and/or platforms. Each process chamber location 1, 2, 4, 4, 106, 108, 110, 112, 114, 116 and mechanical arms 132, 120 are typically associated with a system Controller 111, which

It can be a microprocessor control system for receiving users and/or systems! The input values of the various sensors on the , are appropriately controlled and operated according to the input values and/or predetermined process parameters. The controller 1 1 1 generally includes a memory device (not shown) and a central processing unit (CPU, not shown), and the controller 11 1 utilizes the memory device and the CP u to reserve, process, and execute various functions as needed. Program. The memory device is connected to the CPU and can be one or more readily available memory components, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or other local area or A remote form of storage in the form of a digit. The software commands and data can be encoded and stored in the memory device to indicate cpu. A support circuit (not shown) is also connected to the CPU and supports the processor in a general manner. The support circuitry may include a cache memory, a power supply 'clock circuit' input/output device, an electrical system, a subsystem, and other components well known in the art. Controller 1 1 呤 The program (or computer command) read determines which action the process chamber should perform. It is estimated that the program is a software readable by the controller U1. The software includes instructions for monitoring the electroless process according to the defined rules and input data. In addition, the process chamber locations 102 〇 4, 106 , 108 , 11 〇 , 112 , 1343840 1 1 4 ' 1 16 are also associated with a fluid delivery system (such as the fluid introduction system 1 200 described below) for process execution. Provide the fluid required for each process chamber. The fluid delivery system is typically controlled by system controller 1 1 1. An example of a fluid delivery system can be found in U.S. Patent Application Serial No. 10/438,624, entitled "Multi-Chemistry Electrochemical Processing System", filed on May 14, 2003. The case is attached for reference.

According to one embodiment of the system 100, the process chamber position is 1 〇 2, 1 〇 4, 1 0 6

1 0 8 , 1 1 0, 1 1 2, 1 1 4, 1 1 6 can be configured as follows with reference to Fig. 1. The process chamber locations 114, 116 may be located between the wet processing station and the dry processing station on the main platform 113, or between the joining channel 115, the annealing chamber 35, and the working interface 130. The process chamber locations 114, 116 located at the interface are, for example, rotating spin-drying chambers and/or substrate cleaning chambers. Each of the process chamber locations 114, 116 can include a rotating wash drying chamber and a substrate cleaning chamber in a stacked configuration. Alternatively, the process chamber location 114 can include a spin wash chamber and the process chamber location 116 can include a substrate cleaning chamber. In another embodiment, each of the process chamber locations 114, 116 can include a combined rotary wash drying chamber and substrate cleaning chamber. A detailed description of the rotary washing and drying chamber of the embodiment of the present invention can be found in U.S. Patent Application Serial No. 10/680,616, entitled "Spin Rinse Dry Cell", filed on January 1, 2003. The application is attached for reference. The process chamber locations 106, 108 can be substrate cleaning chambers, and in particular can be substrate bevel cleaning cells', ie, after the deposition process is completed, used to remove excess deposits on the edge of the substrate or on the back side of the substrate. Process room. 12 1343840 An example of a bevel cleaning chamber is described in U.S. Patent Application Serial No. 10/826,492, entitled "Integrated Bevel Clean Chamber", filed on April 16, 2004. The case is attached as a reference. In yet another embodiment, the process chamber locations 106, 108 can be removed from the system 100 as desired. Additionally, the process chamber locations 106, 108 can be one or a set of electroless plating chambers, which will be described in further detail below. The process chamber locations 102, 104 and the process chamber locations 110, 112 can be electroless chambers. The electroless process chamber locations 102, 104, 110, 112 can be placed in a process enclosure 032 on the main platform 113, wherein each process enclosure 30 2 is configured with two process chambers, ie, the process chamber location 1 10, 112 as the first process chamber and the second process chamber in the first process enclosure 302, and the process chamber locations 102, 104 as the third process chamber and the fourth in the second process enclosure 302 Process room. In addition, as described above, the process chamber positions 106, 108 of the embodiment of the present invention may have a process enclosure area 3 0 2 disposed thereon, and the process chamber positions 1 0 6 and 1 0 8 may be similarly configured as required. The method of chamber locations 102, 104, 110, 112 is set.

The base is unified and the 12 is plated or the other is fixed, 1 electric i /, and the chamber is set or, for example, the room should be replaced by the chamber chamber to rectify the recurring electric power W 1 The living can be without electricity, but the package is not 00 for one. It can be '1 room type, such as the same room room. Example 02. Key record system treatment β 1 room electric plating body with 02 plating No current type, 3 digits of electricity, no one compartment has no medium room. Closed door 02 key The root chamber is sealed to 3 electricity. Cheng Platinum 'can be used in the classroom system of electricity system 04 closed cleaning group no side 1 sealed electric clear one for side placement such as or each pair of matching system, Suzhong room 00 fixed room room washing process 1 special Cheng Yongcai 10 system system (S:) 13 1343840 can be an electroless activation chamber, and the process chamber position n〇 can be - electroless plating chamber. The process chambers in each process enclosure 302 are typically controlled by a system controller Π 1 . Fig. 2 is a schematic view of an embodiment of an electroless plating system 1 〇 〇 and an enclosed area 3 〇 2, which includes, for example, a process chamber position 11 〇 '丨12. For the sake of clarity, the power saving device is not the hardware device of the process chamber position 11〇, 112 in the second figure. A closed area 302 defines a set of process control environments around the process chamber locations 11A, 112. The process enclosure 302 can include a central inner wall 308 that generally divides the process environment into two process spaces 3, 2, 3 1 3 of the same size. Although the central inner wall 308 may or may not be used, when the central inner wall 3〇8 is used, a first process space 312 is generally formed above the process chamber position 110, and a second process space 313 is formed above the process chamber position 112. The first and first process spaces 3 1 2, 3 1 3 are substantially separated by a central inner wall 3 〇 8 , and the lower portion of the inner wall 3 08 includes a recess or slit 31 〇. The slits 31 are fabricated to accommodate a substrate transfer device 305 located between the process chamber locations 110, 112. The substrate transfer device 3 〇 5 is generally used to transfer the substrate between the process chambers (process chamber position no - process chamber position U2) without the use of the main platform robot arm 120. The substrate transfer device 3〇5 can be a vacuum suction type substrate support member “because it can rotate at a point, so that the substrate support end of the substrate transfer device 305 can be referred to by the arrow 3〇3. The direction (as shown in Figure 1) is moved, and the substrate is transferred between the processing chambers in summer, between 10 and 112. Each of the process spaces 312, 313 also includes a sealable inlet 304 for engaging a robotic arm, such as the main platform robot arm 12, into each of the process spaces 3 1 2, 3 1 3 to place or remove the substrate.

14 1343840

Each process space 312, 313 also includes an environmental control component 315 located thereon (see Figure 2, and for clarity of presentation, the ring control component 3 15 is removed without the process space 3 1 2 , 3 1 3 contact). The environmental control assembly 315 includes a process gas source (not shown) that is in fluid communication with the process space 3 1 2, 3 1 3 and provides process gases to the various process spaces 3 1 2, 3 1 3 . The process gas source is typically supplied to a respective process space 312, 313 by providing a quantity of inert gas (e.g., nitrogen, helium, hydrogen, argon), and/or a mixture thereof, or other gases commonly used in semiconductor processes. The environmental control component 315 further includes a particle filtration system such as a high efficiency particulate air (HEPA) filtration system. The particle filtration system is used to remove contaminating particles contained in the gas flowing into the process space 3 1 2, 3 1 3 . The particle filtration system is also used to generate a generally linear and identical flow of process gas to the process chamber below it. The environmental control component 315 may further include components that control conditions such as humidity, temperature, pressure, and the like of the various process spaces 312'313. The system controller Π 1 can be used to adjust the operation of the environmental control assembly 3 1 5 and the vent 314, and other components in the system 100 to or according to process conditions or receive sensors in the process space 3 1 2 ' 3 1 3 or The input value of the detector (not shown) controls the oxygen content in the process spaces 312, 313. In operation, the environmental control component 315 is typically utilized to provide process air to process space 312, 313. The process gas is introduced into the process spaces 312, 313 such that the inert gas fills the closed process environment to expel gases (e.g., oxygen) that may deteriorate the electroless process from the process space 3 1 2, 3 I 3 . Generally, the process gas source is introduced into the process chamber position u〇, 11 2 in the vicinity of the upper portion of the process space 3 1 2, 3 1 3 and near the central portion of each process space 312, 313. Process gas is generally passed through a ηEPA tear

(S 15 1343840

The system is introduced into the process space 3 1 2, 3 1 3 to reduce the scattered particles and to divide the process gas flow and direction so that the gas flows evenly into the process chamber position Π 〇, 11 2 . Each of the process chamber positions 110, 112 also includes at least one discharge port, a plurality of radially arranged discharge ports 3 1 4), so that the environmental control component 3 1 5 process gas uniformly flows into the process chamber position 1 1 0, 1 1 2 . The discharge can be disposed below the substrate processed by each process chamber location 110, 112, and the discharge port 314 can be disposed outwardly from each process chamber location Π0,112. Regardless of the configuration, the vent 314 allows the process to flow evenly, or selectively discharges fluid and chemical vapors out of the various processes 1 1 0, 1 1 2 . An inert gas is supplied to the process space 3 1 2, 3 1 3 typically to provide an inert gas at a gas flow rate of from about 10 slm to about 300 slm, preferably from about 12 sl to about 80. The flow rate should generally be adjusted to the amount of bad gas generated, residual or infiltrated into the process space. When the systems 3 1 2, 3 1 3 are closed, ie when the inlet 3 04 is closed, the inertia is reduced. When the inlet 304 is opened, i.e., when the substrate is moved into or out of the zone 302, the process gas flow can be increased to allow the gas to flow out of the process 302. The effluent gas is used to prevent the surrounding gas (especially oxygen) from flowing in the enclosed area. Once the inlet 3 04 is closed, the process gas flow rate is the amount of flow that can be processed by the substrate. This flow is held for a period of time before the substrate is processed to drain the internal oxygen out of the process space 3 1 3 . The vent 3 1 4 cooperates with the process gas supply to oxygen in the process spaces 312, 313. The discharge port 314 is generally connected to the air and continuously 3 1 4 (or the supplied α 3 14 square; or the radial gas uniform chamber position method includes slm to reduce the space of the gas flow, and the closed range of the enclosed area is reduced to a suitable one. 312, and removed from a standard 16 1343840

A manufacturing equipment discharge system is used to move process gases out of processes 312, 313. In another embodiment, the process spaces 312, 313 can include vacuum pumps in fluid communication with the process spaces 3 1 2, 3 1 3 . The vacuum pump is used to reduce excess gas in the process spaces 312, 313. Regardless of the configuration of the discharge pump, the environmental control component 3 15 can generally be used to maintain the oxygen content of processes 312, 313, preferably less than about 500 ppm, preferably less than about 100 p pm, when the substrate is processed. The environmental control assembly 3 1 5 'discharge port 3 1 4 and the system controller 1 1 1 also enable the system 100 to control the oxygen content in the process 312, 313 during a particular process step, wherein the particular process The first step of the step requires a first oxygen content to obtain the best effect, and the other process step requires a second oxygen content to obtain the best effect, and the first oxygen content is different from the two oxygen content. In addition to the oxygen content, the system controller 111 can also control other parameters in the process enclosure area according to specific conditions, such as temperature, humidity, pressure parameters, such as heaters, coolers, humidifiers, dehumidifiers, vacuum gas sources, The air filter, the fan and the like are controlled, and the devices are in fluid communication with the process space 3 1 2, 3 1 3 in the environmental control component 3 1 5 , and are controlled by the system controller 1 1 1 . The process space 3丨2, 3 1 3 is made according to the size that can promote the electroless plating process, that is, the process space 3 1 2, 3 1 3 is adjusted, so that when a process step is performed, the environmental control component 3 1 5 The supply gas maintains an oxygen-containing state (generally less than about 50,000 ppm, preferably less than about ppm) and provides sufficient volume to allow the fluid solution to evaporate while the space is 3 1 2, 3 1 3 Does not reach vapor saturation. As for the top space, it is more versatile or space, and the combination of the space steps requires the second process. Pu, set in and subject to Cheng Jin in the low 100 space 17 1343840

Head space is usually required to avoid vapor saturation. For a 300 mm substrate processing chamber, the headspace required for each process chamber location 112 is typically between about 1000 cubic inches and cubic inches. Therefore, in the case of processing a 300 mm substrate, the head space of the clear process space 3 1 2, 3 1 3 may generally be about 1 500 Å to about 5000 cubic inches, or preferably 2,000 cubic inches.吋, cubic 吋, or more preferably from 2000 cubic feet to about 3000 cubics. Therefore, from the substrate located in each process chamber position Π0, 112, the process chamber area to the process space 3 1 2, 3 1 3 The vertical distance from the top (this space to the head space) is generally between about 6 inches and about 40, and the diameter is the same as the process chamber 11 0 '1 1 2 section. Preferably, the longitudinal height of the top is about 12 inches to about 36 inches, and the lateral dimension of the process space 313 is generally approximately the size of each of the process chambers 110, 112, which is typically smaller than the process chambers 110' 112. The treated substrate is directly from 10% to about 50% times. These are important for operating the apparatus of the present invention because of the small process space that can result in vapor and state, which can adversely affect the electroless plating process. It has thus been determined that an appropriate headspace (the cross-sectional area of the process chamber multiplied by the distance above the substrate area) is important to avoid vapor saturation and to reduce saturation-related defects. The process space 3 1 2, 3 1 3 is generally separated from each other, and the groove 3 1 0 of the gas in one process space flows into another adjacent process space embodiment, wherein the pressure in one process space is greater than the other The pressure of an adjacent space. This pressure difference can be used to control the various process spaces 3 1 2, 3 and find 110, about 5 000 in this hair cube, about 400 0 inch. The surface is more generally referred to as the space of the British 312. The size of the surface is approximately the size of the surface. The invention is closed to the seal and the vapor is allowed to be in the process of 13 (S:) 18 1343840

Cross talk ‘If this pressure difference is maintained, the gas will flow in the same direction with the amount of IL in the process space. Thus, a process chamber can be designed as a cooling process chamber, such as an activation chamber; and another process chamber can be designed as a heat treatment chamber, such as an electroless chamber. In this embodiment, the heat treatment chamber is subjected to a relatively large pressure so that the gas in the heat treatment chamber will always flow through the slit 310 to the cooling treatment chamber. This prevents the cooling chamber from lowering the temperature of the heating chamber. In general, the heat treatment chamber (i.e., the electroless chamber) is more susceptible to temperature changes than the cooling chamber (i.e., the activation chamber). According to another embodiment, the process spaces 312, 313 can be completely separated by the central inner wall 308, i.e., the substrate transport device 305 and the slit 310 are removed. In this embodiment, the main platform robot arm 20 can be passed through each of the inlets 304 to each of the isolated process spaces 3 1 2, 3 1 3, and the substrate can be transferred between the process spaces 312, 313.

Figure 3 is a perspective view of one embodiment of a deposition station 400 with the process enclosure 302 removed. The deposition station 400 generally represents an embodiment of the process chambers of Figures 1 and 2. The process chamber in deposition station 400 can be a non-electrical activation station 402 and an electroless plating station (or deposition station) 404. The substrate transfer device 305 is disposed between the stations 402, 404 to transfer the substrate between the stations 402, 404. Each station 402, 404 includes a rotatable substrate support assembly 414'. When a substrate 401 is processed in each station, it is supported in a face-up direction, that is, the treated surface of the substrate 401 is back-to-base. Material support assembly 414. In FIG. 3, the substrate support assembly 414 in the station 402 is not shown with a substrate 401', and the substrate support assembly 414 in the station 044 is supported with a substrate 401' for indicating each station. Loading and unloading status. Generally speaking, each station 19 丄州840

The hardware design of 02, 404 is the same, but the embodiment of the present invention does not. For example, the electroless plating station 404 can be provided with a platform assembly 403 (to be described later), but the electroless activation station 402 can be provided without the platform assembly 403. Substrate support assembly 414 (also shown in the cross-sectional view of Fig. 4) - ring structure 4 1 1 ' has a plurality of substrate support members 412 extending vertically therefrom. The substrate support finger member 412 generally includes an upper water jj for supporting the edge or bevel of the substrate 401, which can be seen in the key station 404 of Fig. 3 and the cross section of Fig. 4. The substrate support finger member 412 further includes a vertical rod member 415 for adjusting the center position of the substrate 401 placed on the support member 412. The substrate support assembly 414 further includes a lift 4 1 3 (see Fig. 4) for vertically moving the ring structure 41, so that the support member 412 can handle the substrate 401 in each of the stations 402, 404. Each of the stations 402, 404 includes a dispensing arm 406, 408, respectively, above the substrate 401 to dispense processing fluid to the front end of the substrate or to the processing surface during processing. The distance between the fluid distribution arms 406, 408 and the base of the fluid distribution arms 4 0 6 , 4 0 8 and the surface of the substrate 4 0 1 may be set to about 〇 5 mm to about 3 0 . The millimeter is preferably from about 1 mm to about 15 mm, more preferably from about 4 mm to about 10 mm. The vertical position and configuration angle of the fluid distribution of the dispensing arm 408 can be adjusted as needed for the substrate. The dispensing arms 406, 408 can include a plurality of fluids whereby the dispensing arms 406, 408 can dispense a plurality of processing fluids onto the substrate. In one embodiment, one or more fluid introduction systems 1 200 (described 9 , 9A and 9B are described below) connect the dispensing arms 406 and/or sub- 4 '8' to deliver processing fluid to the surface of the substrate 401. Restricted to include a finger-and-face, an electroless-envelopable component, a finger-joined 401, a material processing 5, 406, a processing tube, 401, a reference weight 20 1343840, an example of a fluid dispensed by a dispensing arm 406 or a dispensing arm 408 Including washing liquid, cleaning solution, activation liquid, no electro-key liquid, and other solutions required for the electroless key process. In addition, the flow conduits (not shown) in each of the distribution arms 4〇6, 408 can be heated/cooled. To control the temperature of the dispensed fluid. Heating/cooling the fluid conduit in the dispensing arm prevents the fluid from cooling down before dispensing. Since the uniformity of the electroless recording process is temperature dependent, the heating/cooling method also improves the uniformity. Moreover, according to an embodiment, the ends of the fluid dispensing arms 4 〇 6, 408 (i.e., the treatment fluid distribution) are movable. Thus, the distance between the fluid distribution of the dispensing arms 406, 408 and the surface of the substrate can be adjusted.

This distance is adjusted to reduce the spillage of the treatment solution and to control the position at which the fluid is dispensed to the substrate processing surface. Figure 4 is a cross-sectional view of an embodiment of a set of process stations 402, 404. Figure 4 also shows that the process enclosure 302 for defining the first and second process spaces si], 313 is separated by a central inner wall 308 (as in Figure 2 above). Each of the process stations 402, 4, 4 includes a substrate processing platform assembly 4, 3 which is formed to be substantially horizontal and abuts the upper surface below the substrate as the process progresses. The platform assembly 403 (shown in detail in section 5A) includes a fluid diffusion member 4〇5 above the base member 417, and a fluid space 4 1 is formed between the fluid diffusion member 405 and the base member 4丨7. Hey. ★ Referring to Figures 4 and 5A, a fluid supply pipe 409 is connected to the fluid upper portion 410 and the fluid diffusion member 4〇5. According to an embodiment of the fluid source 4 0 9 B, the 丨·4·- T \ cloud is separated from the water source or the inert gas source by the fluid supply tube 409 to the fluid to the fluid space 4丨0. According to another embodiment, the fluid of the fluid source 〇9B first utilizes the first-class Zhao heater 21 1343840 before flowing into the fluid space 4 1 0

The application for Temperature Uniformity for Face-up Wet Processing) is attached as a reference.

Referring to Fig. 5A, in operation, the substrate 401 is fixed by the finger member 412 and placed vertically above the fluid diffusion member 405. The space between the fluid diffusion member 405 and the substrate 406 is 50. The temperature control fluid delivered to fill the fluid source 4 0 9 B and the fluid heater 409A is distributed through the fluid diffusion member 405 and the fluid supply tube 409. The temperature control fluid contacts the back side of the substrate 401 to transfer heat to the substrate 401, thereby heating the substrate 401. In this embodiment, the substrate 40 1 is generally disposed parallel to the upper surface of the fluid diffusion member 405 and at a distance of from about 0.1 mm to about 15 mm from the upper surface of the fluid diffusion member 405, preferably from the fluid diffusion member. The upper surface of the 405 has a distance of from about 0.5 mm to about 2 mm. According to an embodiment, the substrate 401 is rotated relative to the diffusion member 405 and the temperature-controlled fluid flowing therefrom by a support motor 443 (Fig. 4) attached to the substrate support assembly 414. The heat transfer effect between the temperature control fluid and the substrate 40 1 is improved by the rotation of the substrate 401 relative to the diffusion member 405 and the temperature-controlled fluid flowing therefrom.

In another embodiment, the platform assembly 403 can include a heater 433' which can be a resistive heater for increasing the temperature of the platform assembly 403 to heat the substrate 110. According to an embodiment, the fluid source 4 0 9 B and the fluid heater 409A are first delivered to the fluid supply tube 409 before the fluid contacts the substrate 401 placed on the support finger member 412. Heaters (e.g., heaters 433, 409A) can be coupled to system controller 11 1 such that system controller 1 1 1 can adjust each heater ' to control the temperature of the temperature control fluid and the substrate. i 23 1343840 The fluid diffusion member 405 includes a miscellaneous μ* = a plurality of flow holes 407 extending through the soybean meal for communicating the fluid diffusion member 4〇5", the downstream side or upper surface 453 of the crucible and the fluid diffusion member 405 The lower surface or upper 彳β| " swim side 4 0 5 A. The edge portion of the flow diffusion member 405 is generally in close contact with the base 槿坻 member 4 1 7 , thus, the flow system is

^The supply tube thoroughly guides the fluid space 4 and • because of the introduction of the flow, the backpressure is generated in the closely connected fluid space 41〇, and the fluid can flow uniformly through the fluid diffusion member 4〇5. The flow hole 407 »flow space 41 is thus surrounded by the upstream side 405A of the diffusion member 4〇5 and the inner surface 417 of the base member 417. In one embodiment, the fluid diffusion member 405 can include from about 1 to 2 turns of flow holes 407, and the diameter of the flow 407 is generally from about 毫米$m to about $mm, preferably from about 0.7 mm to about 3. Millimeter. The flow holes 4〇7 may be perpendicular to the upper surface 45 3 of the diffusion member 405 or may be at an angle to the upper surface 453 of the diffusion member 4〇5. The flow holes 407 may be disposed at an angle of from about 5 degrees to about 45 degrees (from the vertical line) to allow fluid to flow outwardly through the surface of the fluid diffusion member 4〇5. In addition, the flow hole 407 provided at the angle can reduce turbulence generation „

FIG. 5B illustrates another embodiment of the flow boat diffusion member 405 having a plurality of multiple faces 452 and a side bank 45丨 to improve the uniformity of the temperature-controlled fluid dispersed on the surface of the substrate disposed above the support finger member 412. . According to an embodiment, referring to the fifth B - 5 D diagram, the entrance face 4 5 2 a of the multi-face 4 5 2 diameter (the 5th C" D]") is smaller than the diameter of the outlet face 452B (笫5C figure) D2"). The multi-face 45 2 has a smaller inlet surface 452A for restricting fluid flow through the multi-face 452 to improve the uniformity of fluid flow over the surface of the fluid diffusion member 4〇5 and the substrate. Exit Diaphragm 45 2B Diameter (D2 ) larger than the entrance

< S 24 1343840 The diameter 452A of the section 452A reduces the velocity of the temperature-control fluid flowing out of the outlet section 452B and reduces the surface area of the upper surface 453 (Fig. 5C) or the downstream side of the fluid diffusion member 405. Reducing the surface area of the upper surface 4 5 3 can be reduced below the surface of the substrate to form a region that does not contact the temperature control fluid or "dry region" « The person who pulls the surface. The surface tension of the flowing temperature control fluid, and the temperature control flow The ability to wet the substrate surface and/or the upper surface 45 3 of the fluid diffusion member 405 will result in the formation of the # dry region J. In one embodiment, the flow diffusion member 405 is preferably applied to the main surface 453. Roughening, such that the surface roughness (Ra) is about 1.6 micron (μηι) to about 2 μm to improve the wetting of the fluid, and if the dryness of the upper surface is "large enough", the temperature-control fluid is transferred to the base. The heat of the material will be insufficient, thus affecting the uniformity of temperature distribution on the substrate, which in turn affects the results of the electroless plating process. According to the embodiment, the method of roughening the upper surface 4 5 3 is bead blasting or grit blasting. Although "there is a diameter" hole, other embodiments may use multiple faces of different shapes (such as square, octagonal, etc.), which may have fixed or varying wear in the diffusion member 4〇5. Size 35. According to an embodiment of the invention, the multiple faces 452 may be different in size and shape throughout the surface of the diffusion member 4〇5 to achieve the desired fluid coverage, heat transfer effects, and/or process results. *疋451 or raised portion" is a circular ring that protrudes above the upper surface 453 of the fluid diffusion member 4G5, and is generally in the space 45 流出 between the substrate and the upper surface δ 45 3 Used to collect and compact the flow of temperature-controlled fluids (''Α'' in Figure 5). Since the temperature-control fluid flowing out of the multi-face 452 is collected before flowing over the bank 451, it can reduce or avoid the formation of the dry zone 25 1343840 region j. Thereby, the bank 45 can maintain or control the temperature. The fluid "pool" is on the upper surface 453 of the fluid diffusion member 405. Referring to an embodiment of Figure 5C, the bank 451 protrudes from the upper surface 453 by a distance ''X', wherein the distance ''X' is about 0.5 mm to about 25 mm.

5C is an enlarged schematic view of the edge of FIG. 5B. According to one embodiment of the platform assembly 403 and the fluid diffusion member 405, the outer diameter D3 (i.e., the outer surface) of the side wall 45 1 and the fluid diffusion member 405 is smaller than the substrate diameter D4. Thereby, the fluid on the upper surface (W i) of the substrate can be reduced in contact with the temperature control fluid, and the fluid on the upper surface of the substrate can be prevented from contaminating the back surface of the substrate (W2).

5C illustrates an embodiment of a platform assembly 403 having a multi-face 452, wherein the multi-face 4 5 2 includes two features: an entry face 4 5 2 A and an exit face 452B, and the multiple faces 452 are equidistant. A distance "'L" is separated. As shown in Fig. 5C, the depth of the inlet section 452A is H, and the depth of the outlet section 452B is H2. Figure 5D illustrates another embodiment of the fluid diffusion member 405, wherein the multifaceted The ceremony 452 includes a plurality of surfaces 454A, 454B, 454C that are not perpendicular to each other, but are gently transitioned from the inlet surface 452A to the outlet surface 4 5 2 B. For example, in one embodiment, the surface 4 5 4 B The angle of the centerline of the hole is preferably about 60 degrees. The number of surfaces shown in Fig. 5D (such as surface 454A, 454B, 454C) and the shape (that is, linear or nonlinear, such as an exponential or second-order curve) are not It is used to define the spirit and scope of the present invention. Although the multi-faces shown in Figures 5C and 5D have a coaxial structure, such as a left-right symmetric feature structure, other embodiments may adopt an asymmetric or non-symmetric center structure. It is also within the scope of the claimed invention. A three-dimensional view of the platform assembly 403, showing an embodiment in which a multi-faceted (S:) 26 1343840 hole pattern is arranged in a fluid expansion Μ μ λ i ^ ^ t, a dare member 405. Referring to Figure 5 e In an embodiment, the multi-faces 40 u 52 are arranged in a square hole pattern (e.g., Li by L 1 ). In another embodiment, the v & 流体 fluid diffusion member 410 is fanned, quartered, or entirely Surface area + „ 吟 has the hexagonal closest packing pattern (that is, a pattern in which a single hole is equidistantly arranged by six holes), a rectangular hole pattern, and a radial shape

Symmetrical hole pattern, and / or its # nsu, β Λ + +, he ~ τ adjust the substrate temperature distribution of the non-uniform hole pattern of the hole array, use w M + U t to improve the surface of the substrate Uniformity of Electroplating Processes Figure 5F is a cross-sectional view of the embodiment of the platform assembly 4〇3, where "ll bodywork 4 1 0 knife is divided into two sections' to transport multiple temperatures of different temperatures The warm fluid is in the space 45〇 between the fluid diffusion member 4〇5 and the substrate 4〇1. Thereby, the predetermined temperature distribution of the surface of the substrate and the pre-extrusion result of the electroless plating process are achieved. In this embodiment, the platform assembly 〇3 includes a first zone hardware 447 and a second zone hardware 448. The body assembly 447 includes a first fluid supply tube 446A, a first interval of hard-fluid heating

The device 446B, a first fluid source 446c and a first base member 446d. The second section hardware arrangement 448 includes a second fluid supply tube 445A, a second fluid heater 445B, a second fluid source 445 (with a second base member 445D. The second base member 445D of FIG. 5F is The base member 41 of the fifth and seventh figures. According to an embodiment, the first section hardware 447 is used to transport the first temperature control fluid "B", and the second section hardware 448 is used to transport the The second temperature-control fluid, A", is placed on the substrate 401 above the support finger 412, and the temperatures of the first and second temperature-control fluids are different. According to another embodiment, the platform assembly 304 may be internally included One or more impedance type heating 27 1343840

(not shown) for increasing the temperature of the fluid in the first base member 446D of the first section hardware assembly 447 and/or the second base member 445D of the second section hardware assembly 448. Heaters (e.g., impedance heaters 445B, 446B) can be coupled to system controller 1 1 1 such that system controller 1 1 1 can adjust each heater to control the temperature of the temperature control fluid and the substrate to be treated. While the platform assembly 403 of Figure 5F has two intervals, other embodiments may divide the fluid space 410 into three or more intervals to individually control the temperature at which the fluid contacts the substrate. According to one embodiment, the separately heated fluid is supplied to each of the back regions of the substrate through the respective flow holes 407 or the flow holes 407, and utilizes the flow holes 407 and flows through the flow holes 407. The temperature of the fluid is heated to control the temperature distribution of the substrate. For example, this embodiment can increase the temperature near or at the center of the substrate as the process progresses.

In another embodiment of the invention, the fluid diffusion member 405 may comprise a porous material, such as a porous ceramic, through which fluid flows. The porous ceramic material is, for example, an alumina material. This embodiment generally does not require a flow hole 410, and the present invention incorporates a flow hole 407 with a porous fluid diffusion member 405 at a desired location to promote fluid flow. According to an embodiment, the fluid diffusion member 405 can comprise a porous plastic material such as polyethylene, polypropylene, PVDF, PTFE, Teflon, or other suitable porous plastic material. A plastic material with a hydrophilic surface promotes "wetting" the surface of the fluid diffusion member 405. In one embodiment, the fluid diffusion member 405 may have a pore diameter of between about 1 micrometer and about 500 micrometers. Since the resistance of the fluid flowing through the fluid diffusion member 405 is the number of the distance (:S:) 28 1343840 of the fluid flowing through the fluid diffusion member 405, the vertical height of the fluid diffusion member 405 can be varied to provide the desired fluid. Flow characteristics -

Referring to Figures 4 and 7, the method of placing the substrate for processing generally includes moving the lift assembly 4 13 between the loading position and the processing position. Figure 4 The lift assembly 4]3 in the process station 402 on the left is in the stowed position and the lift assembly 413 is in the upright position to extend the support finger member 412 above the upper shackle 4 1 8 . In this case, the dispensing arm 460 is positioned vertically above the support finger member 4 1 2 and has a spacing to allow loading of the substrate 410. The dispensing arm 406 (and other fluid dispensing arms in the electroless plating system) includes a stationary base member 426 that telescopically receives an upper arm member 425. A drive motor can telescopically move the upper arm member 425 relative to the bottom member 426 to adjust the vertical position of the dispensing arm 406. The substrate 401 is placed on the support finger by the main platform robot arm 120 or the substrate transport device 305. On the object 412, the support finger member 412 then vertically activates and moves the substrate 40 1 from each of the robot arms 120 / transport device 305. When the substrate 401 has been supported on the support arm 120 / transport device 305 When the object 412 is used, the robot arm 12 0 / transmission device

The 3 0 5 can be removed from below the substrate 410 and the finger 4 1 2 can be lowered to the processing position. The lifting assembly 413 in the process station 404 on the right side of FIG. 4 is in the processing position, and the lifting assembly 413 is in the vertical position, so that the supporting finger member 412 can vertically position the substrate 401 and approach one of the shackles 4 1 8 ' 4 1 9. In this case, the fluid dispensing arm 408 is lowered to near the upper surface of the substrate 401 (as shown by the process station 404 of FIG. 4). The lift assembly 413 is generally activated by a power screw lifting device 427 for vertically actuating the riser assembly 1123 and the components attached thereto. In particular, the flow portion is coupled to the lift assembly 4 1 3 and the lift assembly 4 1 3 - the lower portion of the process chamber generally includes a substrate support assembly 414 (object 4 1 2 and ring structure 4 U )' lower partition wall 424, and: Referring to Figures 4 and 7, according to an embodiment, the platform is held 'not moving' and does not move with the lifting assembly 4丨3 (e.g., supporting ring structure 4 1 1). In this embodiment, the substrate support 442 attached to the base fluid diffusion member 405 is mounted on the main platform 113 through a floor (not shown). When the bottom support 442, the base member 417, and the fluid diffusion assembly 413 are raised from the substrate support assembly 414, the base support assembly 414 is not rotated, and according to an embodiment, the substrate support assembly 4 1 4 using one or not; see elements 1054A, 1054B) of Figure 9 and pair 442' which is also supported relative to the substrate support 442 and the lead 4 1 4 ° due to the use of rotating fluid by the base member 4 17 and the fluid diffusion member A gasket (not shown), which generally reduces the capacity of the component, so that this embodiment can be avoided. According to another embodiment, the substrate support 442 is further provided with f and a fluid supply tube 409 (Figs. 5A and 7). . Referring to Fig. 6, the substrate support assembly 414 is generally packaged 412, the vertical member 415, the substrate support surface 415A, and the substrate placed on the substrate support surface 415A is vertically inserted or retained. According to one aspect of the invention, the substrate support chamber is moved downward. The fluid contains support fingers. The assembly 403 is still in the form of a member 4 1 2. The bottom member 4 1 7 and the plurality of structural members 405 of this embodiment are moved up and down or are rotated. A plurality of bearings (the unillustrated base support guide substrate support group 405 is rotated to generate particles to cause a particle problem to occur.: Wires (not shown) include support fingers and ring structures 4 1 1 . Rods 4 1 5 Carrying the struts 4 1 4 can be 30 1343840

It is designed to avoid the effects of thermal expansion of the various components to maintain the material on the substrate support surface 415A. The expansion of the substrate support assembly 414 can cause misplacement and/or damage to the material placed between the vertical members 415. One of the methods for reducing the thermal expansion phenomenon is to fabricate a substrate supporting member 4 1 4 using a low expansion coefficient, such as tungsten, aluminum telluride, or boron. In accordance with another aspect of the present invention, the ring structure 41 1 can be designed as a geometry that allows the support finger member 4 1 2 and the vertical bar to move in a minimum range. Referring to Figures 4 and 7, the lower portions of each of the process stations 402, 404 include partition walls 422. The partition member 422 cooperates with the lifting assembly 41 3 - the loading position (shown as station 402 of Figure 4) and the processing position (shown in Figure 4 404). The partition member 422 generally includes an upper partition 423 fixed to the main table 113, and a lower partition 424 connected to the elevating assembly 413 and following. Between the lower partition walls 424 (especially the pair of partition walls 424 closest to the innermost portion of the chamber) may be filled with a fluid (e.g., deionized: to seal the lower portion of the process stations 402, 404, separate the outer portion of the closed area J| The ionic water can generally be continuously supplied between the partition walls 4 24 by, for example, a drip mechanism. The fluid-tight partition member 4 2 2 can form a reliable sealing environment in the stations 402, 04 04, and when the structure When linearly rotating and moving, it is not necessary to use a single gasket 428 for sealing. The transfer usually places the gasket with both rotational and linear movement functions on a common partition member 422, allowing the gasket 42 8 in Figure 7 only It is a single-turn seal, rather than a combination of a rotary seal and a vertical sliding seal. This composition is generally not easy to handle in a fluid system. The base-based thermal expansion of the base material or carbon has a 415 Move process K), environment. Should be in the way of the process. One spin, 31 1343840

As noted above, each station 402, 404 can also include an upper shackle 418 and a lower shackle 4 1 9 (see Figures 4, 5 and 7). Each shackle 4 1 8 , 4 1 9 generally includes an annular member extending inwardly and upwardly from the inner wall of each station 402 404. The shackles 418, 419 can be attached to the inner wall of the process chamber or can be integrated into a portion of the interior wall of the process chamber. The inner ends 421a, 421b of the shackles 418, 419 are generally larger than the diameter of the treated substrate 40 1 by between about 5 mm and about 50 mm. When the substrate 401 is treated as such, the substrate 401 can be lifted and lowered by the respective shackles 4 18 and 4 1 9 . In addition, each of the shackles 4 1 8 and 4 1 9 also includes a fluid discharge pipe 420a, 420b for collecting the treatment fluid on the fluid shackles 41 8 and 419 (Fig. 7), as shown in Fig. 7, the fluid The discharge pipes 420a, 420b communicate with the discharge port 314. The scallops 314 are connected to a separation box 429 (Fig. 4) which separates the gas from the fluid. The separation box 429 includes a gas discharge port 430 at an upper portion thereof and a fluid discharge port 43} at a lower portion thereof. The separation box 429 further includes a recovery port 432 (Fig. 4) for conveying the treatment fluid collected by the fluid discharge pipes 420a, 420b of the hook rings 418, 419 to a regeneration device (not shown) to make the fluid reusable. .

Referring to Fig. 7 'hook ring 418' 419, the substrate 4 can be treated with fluid from a plurality of vertical positions in each of the processing stations 4, 2, 404. For example, in the first fluid processing step, the substrate 401 can be placed with its upper surface slightly above the end 42la of the upper fishing ring 418. Thus, a first treatment fluid can be dispensed onto the substrate 4〇1 using the dispensing arms 406, 408, wherein the substrate support assembly 414 and the substrate 401 are supported by the motor 443 at a temperature of from about 5 rpm to about 12 〇 pm. Speed rotation. Rotating the substrate 4〇1 allows the fluid to flow radially outwardly out of the substrate as it is dispensed onto the substrate. When the fluid flows through the edge of the substrate, its 32 1343840

It flows outward and downward and is then received by the upper hook ring 4 1 8 . The fluid can be collected by the discharge pipe 420a as needed, and then sent to the recovery port 432 or recycled for use in the subsequent process. After the first fluid processing step is completed, the substrate 401 can be vertically moved to a second fluid processing position, wherein the upper surface of the substrate 401 is slightly placed over the end 42 1 b of the lower shackle 4 1 9 to perform a A second fluid treatment step. The substrate 401 is treated here in a manner similar to the first fluid processing step, and the fluid used in this step can be collected by the fluid discharge tube 420b. One of the advantages of this configuration is that a single processing station can use a variety of fluid handling chemicals. In addition, the fluid treatment chemicals may be compatible or incompatible, since the fluid shackles 4 18 and 419 each have separate fluid discharge tubes 420a, 420b, so that they can separately collect incompatible treatment fluids. .

Figure 8A is a cross-sectional view of one embodiment of a fluid processing chamber 800 that can be applied to various aspects of the present invention. The fluid processing chamber 800 can be placed in any of the process chamber locations 102, 104, 106, 108, 110, 112, 114, 116 in FIG. Alternatively, fluid processing chamber 800 can be a single plating chamber or combined with other substrate processing platforms. The fluid processing chamber 800 generally includes a processing section 28 having a top portion (not required, not shown), a side wall 1 〇 and a substrate 27. A bowl-like assembly 4 having a circular side wall and an opening 4 A at the center of the bottom portion 4 C is generally disposed intermediate the substrate 27. A shaft 13 is generally located in the opening 4A of the bowl assembly 4. A plurality of substrate support finger members 18 are attached to the shaft 13 in the opening 4A of the bowl assembly 4. The substrate supporting finger member 18 forms a vacuum by friction and/or a back surface W2 of the substrate W to "suck" the substrate, thereby supporting the substrate W. The shaft 13 and the substrate supporting finger member 18 can be raised and lowered with respect to the bowl assembly 4 by the linear slider 30. As shown in Figure 8A, at location 33 (S > 1343840

In the case of the position, the substrate W on the substrate supporting finger member 18 is positioned by the linear seat 30, and an adjustable gap 33 is formed between the top end 4D of the side wall of the bowl member 4 and the back W2 of the substrate W. The gap 3 3 is generally sized to limit and control the flow of the temperature-controlled fluid flowing out of the fluid space 25 between 25 points of the substrate between the back surface W2 of the substrate and the bowl assembly 4. The fluid source 3 delivers the temperature-controlled fluid to the fluid space 25. In one embodiment, the bank 1 is radially disposed on the edge of the substrate W. The bank 1 is generally a continuous ring around the substrate W which can be directly attached to the side wall 10 (as shown in Fig. 8B) or to the vertical lifting assembly 2 which can be vertically lifted. The bank 1 is generally used to maintain the flow of fluid from the flow distribution port 26 to the substrate W treatment surface W1. On the one hand, the substrate treating surface W, and the inner wall 1A of the bank 1 define a fluid space region 29 where the fluid on the treated surface is collected. On the other hand, since the diameter of the bank 1 is larger than the outer diameter of the substrate W, a gap 3 2 is formed between the edge of the substrate W and the inside of the bank 1. By adjusting the size of the gap 3 2 and the surface tension between the substrate W, the bank 1 and the fluid in the fluid space region 29, the flow rate of the body through the gap 3 2 can be reduced. According to one aspect, the bank 1 is used to concentrate fluid on the substrate treatment W1, to avoid fluid contamination of the back surface W2 of the substrate W, and to limit the amount of treatment dissolved into the fluid space region 29. According to an embodiment, the size of the chamber 3 is from about 0.5 mm to about 2 mm. In one embodiment, the bank 1 can be raised or lowered by the vertical lifting assembly 2 to be in two or more vertical positions. The vertical lifting assembly 2 is a conventional air compression thruster or a direct current servo motor that is connected to a lead screw (not shown as an air-sending external body 1 &W; an inner wall flow surface liquid lift can be drawn 34 1343840). On the one hand, the rising or falling side bank 1 adjusts the amount of processing fluid in the rectifying space area 29 and the amount of residual fluid on the substrate W processing surface Wi. On the other hand, if the bank 1 is lowered to a position where the upper end of the bank 1 is lower than the substrate W or rises to a position where the bottom of the bank 1 is higher than the substrate W, the fluid on the substrate W may be due to gravity or The centrifugal force generated by the rotation of the substrate radially outwardly flows out of the surface of the substrate W. When the bank 1 is lowered or raised, other processes such as a washing process and a drying process can also be performed.

8C and 8D show an embodiment of the bank 1, the extension 1C being located below the substrate W. According to an embodiment, the extension 1 C extends inward from the inner wall 1A of the bank 1 and the side bank 1 has a 'L shape'. The inner diameter of the extension 1C is generally smaller than the outer diameter of the substrate W. Referring to Figure 8C In the embodiment, the side bank is configured to form a gap 3 2 to restrict fluid flow in the fluid space region 29 when the process is progressing.

As shown in the embodiment of Fig. 8D, since the position of the bank 1 is lifted to a position high enough, the extension 1C of the bank 1 can be brought into contact with the surface of the substrate W, so that a static still is formed on the substrate W. "pool" ''distribution fluid (Fig. 8D). According to another embodiment, the extension 1 C can be used to raise the substrate W on the substrate supporting finger member 18, while the substrate W is being processed, The back surface W2 is not heated by the temperature control fluid in the fluid space 25. According to a further embodiment, the side elevation 1 can be lowered by the vertical lifting assembly 2 such that the upper end of the side bank 1 is lower than the substrate W, such that on the substrate The treatment fluid may radially out of the substrate W due to gravity or rotation of the substrate. When the bank 1 is lowered, other processes such as a washing process and a drying process may be performed. Referring to Fig. 8A, generally speaking, Three or more substrate supports

S 35 1343840

The finger member 18 is radially coupled to the top end of the shaft 13 to support the substrate thereon. In one embodiment, the three substrate support fingers 18 are radially aligned equally, i.e., at an angle of 120 degrees. The substrate support finger member 18 generally includes a central passage 17 that communicates with the shaft interface 13A of the sleeve 13. According to an embodiment, the shaft interface 1; 3A is in communication with the central passage 17 with a vacuum source 15, such as a venturi. In this configuration, the substrate is allowed to remain sealed on the substrate supporting finger member 18 by creating a pressure difference between the atmospheric pressure above the substrate processing surface W and the vacuum provided by the vacuum source 15 in the central channel I? Pad 16 (such as 0-ring ι6Α, elastic diaphragm 163). By retaining the substrate by vacuum, the base can be prevented when the substrate supporting finger motor 2 rotates the substrate W and the substrate supporting finger member 18, and/or the substrate supporting lifting member 5 〇 vertically moves the substrate w The material W slides down the substrate support finger member 18. 8E is a detailed view of the top end of the substrate supporting finger member is having a 〇-shaped ring 16A thereon to support the base material. The shape of the 〇-shaped ring 16A on each of the supporting finger members 18 and the material hardness can be matched with the flatness of the semiconductor wafer. Degree and surface roughness for optimal adjustment. It is preferred to select a large cross-sectional area and

The soft elastic seal of the non-slip material composition (such as VitonTM, buna_N, etc.) is used as the stirrup ring 16A. Here, when the vacuum source 15 provides a vacuum to hold the finger member 18 against the substrate W, The ring 16A is used as the primary seal. The ring 16A also prevents fluid leakage in the fluid space 25 from flowing into the central passage 1 7 » Figure 8F illustrates another embodiment of the substrate support finger member 18 One of the substrates w is positioned on the elastic diaphragm 16B. In this embodiment, an elastic diaphragm 16B may be provided on each of the substrate supporting finger members 18 to tightly close 36 1343840

The substrate supports the end of the finger member 18 to avoid fluid flow to the vacuum source 15 » by sub-atmospheric pressure or vacuum at the region 16F between the back surface W2 of the substrate and the upper surface 16C of the elastic diaphragm 16B. The elastic diaphragm 16B maintains the substrate in position. When the elastic diaphragm 16B is displaced (e.g., tensioned or twisted) by the vacuum source 15 generating sub-atmospheric pressure behind the back surface 16D of the elastic diaphragm 16B, a sub-atmospheric pressure or vacuum is formed. The displacement of the elastic diaphragm 16B forms a "vacuum" between the back surface w2 of the substrate and the seal, and the seal is located between the contact points 16E on the upper surface 16C of the elastic diaphragm 16B. In general, the elastic diaphragm 16B is more Preferably, it is composed of a soft and non-slip material such as vit〇nTM and buna_N. Referring to the 8A circle, the fluid processing chamber 800 further includes a substrate supporting finger motor 20 that is coupled to the shaft 13 and is generally Used to rotate and

The base member finger member 18 and the shaft 13 are supported. A rotary seal assembly 14 can be provided to provide a rotatable seal between the shaft 13 and the vacuum source port 5. The rotation of the motor 20 through the shaft 13 and the substrate supporting finger member is the W. The rotational speed of the substrate fulcrum member 18 and the shaft 13 can be varied depending on the requirements of a particular process (e.g., cleaning, washing, drying). Taking the deposition process as an example, the substrate supporting finger member 18 can take a lower rotational speed, for example between about 5 rpm and about 150 rpm, depending on the viscosity of the treatment fluid. The washing may be carried out at a medium rotational speed, for example, in the case of a drying process, for example, a substrate W having a substrate W of from about 50,000 r pm to about. The substrate support lifting assembly 31 can be attached to the substrate to support the lift motor process as an example. The substrate support finger member j 8 is between about 5 rpm and about 1 rpm. The finger-like member can take a higher rotational speed, between 3000 rpm, to spin dry the upper substrate-bearing finger-like motor 50, which typically includes a linear slide 30 coupled to the lead screw 37 1343840 1 9 . In one embodiment, the substrate support lift motor 1 9 is a precision motor for rotating the lead screw 31. The rotation of the lead screw 31 is converted into a linear movement of the linear slider 30, which in turn is converted into the movement of the shaft 13.

Referring to Figure 8, the bowl assembly 4 can be disposed on the base 27 with the bolt assembly 12. The shape of the bowl assembly 4 constitutes a fluid space 25 that communicates with the fluid source 3 through one or more inlets 4B at the bottom of the bowl assembly 4. Fluid source 3 can be used to deliver fluids such as heated deionized water. According to an embodiment, the fluid source 3 causes fluid to flow sequentially through one or more inlets 4 B and fluid spaces 25 and over the top ends 4D of the side walls of the bowl assembly 4. According to an embodiment, the substrate W can be suitably placed to form a gap 33 between the back surface W2 of the substrate and the top end 4D of the side of the bowl member 4 to ensure contact between the back surface W2 of the substrate and the fluid flowing out of the fluid source 3. The gap 3 3 can be sized to allow fluid to flow through the side wall tip 4D (as indicated by arrow "A") and to ensure fluid contact with the back side W2 of the substrate. According to another embodiment, the bowl assembly 4 can form a temperature-enhancing fluid and maintain the temperature of the fluid in the fluid space 25 (particularly near the substrate back W 2 ). In general, this can be accomplished by optimizing the size and shape of the fluid space 25 and/or placing one or more inlets away from the back side W2 of the substrate. The factors that optimize the fluid space 25 to achieve a uniform substrate temperature include, for example, the type of fluid flowing into the fluid space 25, the flow of fluid through the fluid space 25, the ignition temperature of the fluid, and the substrate supporting finger member 18. The physical dimensions, and the rotational speed of the substrate supporting finger member 18, and the like. The rotation of the substrate supporting finger member 18 also maintains turbulence in the fluid space 25 due to the poor heat transfer effect of the laminar flow region. In one embodiment, the fluid flowing into the fluid space 25 is temperature controlled by the (S) i 38 1343840 fluid heater 4 1 . The fluid heater 41 may include a line (i η -1 i n e ) fluid force sigma heater 4 2 connected to the fluid source 3 and/or a heating element 43 attached or embedded in the bowl assembly 4.

According to an embodiment, the outward flow of fluid from the fluid source 3 and through the gap 33 prevents or reduces the flow of fluid from the fluid space region 29 from improperly contacting the back side of the substrate W. Avoiding the contact of the treatment fluid with the back side of the substrate prevents particles or excess material from depositing on the back side of the substrate, thus affecting the yield of the semiconductor component.

In one embodiment, a gap 5 is formed between the shaft 13 and the opening 4A of the bowl assembly 4 to rotate the shaft 13 relative to the bowl assembly 4. The gap 5 has a width of about 0.1 mm to 0.5 mm. However, larger or smaller gaps can also be used. A collecting member 9 having an opening 9A is placed below the bowl assembly 4 and near the shaft 13. The inside of the collecting member 9 has a meandering seal formed between the baffle 7 and the collecting member 9. A tortuous gasket is generally defined as a set of partially overlapping features (i.e., baffle 7 and collection member 9 of Figure 8A) that prevent fluid flow through the seal due to the geometry and configuration of the partially overlapping features. pad. The fluid passing through the gap 5 is collected by the collecting member 9 to the collecting zone 8, and then guided to the discharge port 6 near the bottom of the collecting member 9. Alternatively, the gasket may be disposed between the shaft 13 and the opening 4A of the bowl assembly 4, since a tortuous gasket is not required. The side bank 1, the bowl-shaped component 4, the substrate supporting finger member 18, and the shaft 13 may be made of a ceramic material (such as fully pressed aluminum nitride, aluminum oxide (ai2o3), tantalum carbide (SiC)), coated Polymer-coated metals (such as TeflonTM-coated aluminum or stainless steel), polymer materials, or other (S) i 39 1343840 materials suitable for semi-conductive fluid processes The preferred polymer coating material is a gasified polymer such as Tefzel® ethylene tetrafluoroethylene copolymer (ΕτρΕ), Halar® ethylene-difluoroethylene copolymer (ECTFE), perfluoroalkane resin ( PFA), polytetrafluoroethylene (PTFE), tetrafluoroethylene all-propylene (pgp), polyvinylidene fluoride (PVDF), and the like.

The fluid processing chamber 800 further includes a porous disk u located above the substrate 27 between the outer wall 4 E of the bowl assembly 4 and the side wall 1 。. The outer wall 4E, the base 27, the side wall 1 〇, and the porous disk 1 1 of the bowl assembly 4 define an interval 34. The section 3 4 is connected to the processing section 28 through the hole 1 1 A in the porous disk 1 1 . The vent 24 is generally disposed in the base 27 and is coupled to the vent 21, wherein the vent 21 is generally coupled to a conventional wash venting system 2 3 and a drain 22 »

According to an embodiment, during the deposition process, the amount of oxygen or other gas in the treatment zone 28 is supplied by a process gas (such as nitrogen, helium, hydrogen, argon) and/or from these gases or other Controlled by a mixture of gases commonly used in semiconductor processes. The process gas can be introduced into the treatment zone 28 (see the process space 3 1 3 of the second circle) using the HEPA filtration system and discharged from the exhaust port 2 1 . The use of a porous disk 11 having a hole 1 1 A improves the uniformity of the process gas flowing through the treatment zone 28. The fluid processing chamber 800 further includes a fluid dispensing port 26 for dispensing the treatment fluid onto the substrate w as the substrate W is positioned on the substrate supporting finger member 18. Fluid dispensing port 26 is similar to fluid introduction system 1 200 (described later in conjunction with Figures 9, 9A, 9B), which is typically communicated via at least one fluid supply chamber (e.g., distribution valve! 209 of Figure 9). A fluid supply source (such as solution source 1 2 Ο 2, 1 2 Ο 4, 1 2 0 6 of Figure 9 1343840). Thereby, a plurality of chemicals can be mixed and provided by the fluid dispensing port 26 to perform the different no-key processes described below. System operation

In operation, the embodiment of the system of the present invention is used to perform an electroless preclean process, an electroless activation process, an electroless process, an electroless post-clean process, and/or other processes for electrodeless processes. Processing steps. An example of a powerless chain process performed in accordance with an embodiment of the present invention is described in the embodiment of the discussion herein. The process of the no-switching process is generally preceded by placing a substrate into the process enclosure 302 (see Figure 2). The insertion method generally includes opening the valve inlet 3 04 and placing a substrate 401 into the crucible enclosure 3〇2 using the main platform robot 1 20 . The substrate 4〇1 is placed in a face-up manner, i.e., the surface to be recorded of the substrate 401 is upward.

After the substrate 401 is brought into the process enclosure 302, the main platform robot 120 places the substrate 401 on the support finger 412 in the process station 404, and then the main platform robot 12 exits the process enclosure 3〇2. Then, the finger member 412 can be placed to vertically place the substrate 々οι for processing, and the reading inlet 304 is closed. During the process of placing the substrate, that is, when the valve inlet 3〇4 is opened, the gas supply source of the environmental control unit 3丨5 is also turned on to fill the process enclosure 3 〇2 with the process inert gas tank. Allowing the inert gas to flow into the process space will cause the process gas to flow out through the valve inlet 3〇4, thus avoiding the surrounding gas (especially oxygen) entering the process enclosure 3〇2, thus reducing the oxygen to the key material layer (especially Is the adverse effect of copper) (oxidation). Close 41 1343840

After the valve inlet 3 04, the process gas is continuously supplied, and generally the gas flows before the valve port 3 0 4 is opened. Process gas is continuously applied during the electroless process, activation, and electrical process; and when the valve inlet 304 is closed K, the discharge port 3 14 , the exhaust port, and/or the vacuum pump can be used to maintain the required force. The combination of the gas supply source, the HEPA filtration system and the vent 3 14 is used to control the oxygen content in the process enclosure 302 in a particular process step, and can be controlled and optimized to include and optimize the process enclosure 302 in each process step. Oxygen content. After the substrate is placed in the process chamber, the electroless plating process of the present invention is generally performed on a substrate pre-cleaning process. The pre-cleaning process first places the upper surface of the substrate over the end 421a of the upper shackle 418, typically about 2 mm to about 10 mm apart. The cleaning process utilizes a dispensing arm 406 to dispense cleaning fluid onto the surface of the substrate. The cleaning solution can be dispensed to the surface of the substrate during the process of reducing the substrate to save processing time and increase process capacity. The cleaning solution can be acidic or an intestine solution depending on the cleaning characteristics, and the temperature of the cleaning solution is controlled (heated or cooled) according to the process conditions. In addition, the cleaning solution can contain interfacial activity and agents. The substrate rotation speed is generally from about 10 rpm to about 60 rpm, so that the cleaning liquid flows out radially to the substrate and flows onto the upper shackle 4 1 8 , and the collected cleaning liquid can be transported to the discharge tube 420a as needed. Then, it flows through the discharge port 314 to the separation box 4 29 for separation and recovery. When the substrate is cleaned, the surface of the substrate is typically washed. The washing process involves dispensing a washing liquid (such as deionized water) to the surface of the substrate while rotating the substrate. The amount and temperature of the washing liquid can be adjusted to effectively remove the cleaning liquid remaining on the surface of the material. The substrate is sufficient to cause the washing liquid to leave the substrate. The plating is performed. The first step is to divide the base. The base may be included in the surface of the table. 42 1343840

The speed of rotation is generally, for example, between about 5 rpm and about 120. After the substrate is washed, a second washing step can be performed. In particular, an activation step (which typically involves applying an acidic activating solution to the substrate j prior to treating the substrate with an acidic conditioning solution. The conditioning solution generally comprises an acid, such as an acid used in the activation solution. The surface of the substrate is conditioned to make it suitable for acidic activation liquids. Examples of acids which can be used as conditioning treatment include nitric acid, vaporized acid as the main component, methyl sulphate and other acids commonly used in electroless activation fluids. The substrate conditioning process can be carried out in a neighboring hook. The processing position of the ring 418 is performed, or the substrate can be lowered to a processing position adjacent to the lower portion 419, which is determined by the compatibility between the chemicals of the conditioning process and the pre-treated chemicals. An activation liquid to the surface of the substrate, which is located in the vicinity of the lower hook ring 4 1 9 . The activation liquid is generally used as a post-sequence catalyst layer and/or to promote the interfacial adhesion between the substrate surface and the subsequent deposition layer. The activation liquid is distributed to the substrate by the distribution arm 408, and the activation liquid flows radially outward from the edge of the substrate to flow the ring 419 due to the rotation state of the base. Then, the activation liquid is collected by the fluid discharge tube 420b. The activation solution generally comprises a palladium-based component and an acid-based liquid solution. In the activated ruthenium, the back surface of the substrate (which is generally circular and has a diameter close to the diameter of the fluid diffusion member 405) is generally Disposed from the upper surface of the fluid diffusion member by about 0.5 mm to about 10 mm. The back surface of the substrate and the fluid expansion member 104 are filled with a temperature-controlled fluid, and the fluid can be distributed to the flow hole 410 in the fluid diffusion member. Deionized water. From the flow hole 4 0 7 rpm is in the surface of the material, the polyester material and the near-hook ring process time refined adhesive material is recovered from the hook to the 405 dispersion 405. 43 1343840 A temperature-control fluid (generally a heated fluid, but also a cooling fluid) contacts the back of the substrate and conducts heat to the substrate to heat/cool the substrate for processing. The fluid can be supplied continuously, or the fluid can be supplied after a predetermined volume of fluid is supplied. The flow rate of the fluid contacting the back side of the substrate can be controlled to maintain the substrate temperature during activation. In addition, during activation, the substrate can be rotated from about 10 rpm to about 100 rpm, which promotes dispersion of the fluid in addition to promoting heating/cooling fluid.

After the surface of the substrate is activated, an additional wash solution and/or cleaning solution can be applied to the surface of the substrate to remove the activation liquid from the surface of the substrate. One of the first strips and/or the cleaning solution may be used after activation to include another acid, preferably the acid is compatible with the acid contained in the activating solution. After washing the substrate with acid, the substrate can be washed with a neutral solution (e.g., deionized water) to remove the acid remaining on the surface of the substrate. The post-activation cleaning and washing steps can be carried out at the upper or lower processing position depending on the compatibility of the chemical.

Substrate transfer device 305 can transfer the substrate from electroless activation station 402 to deposition station 404 when the activation step is completed. The transfer process includes lifting the substrate with the support finger member 4 1 2 to move the substrate away from the electroless activation station 40, moving the substrate transfer device 305 under the substrate, lowering the substrate to the substrate transfer device 305, and The substrate is transferred from the electroless activation station 402 to the deposition station 404. After the substrate enters the deposition station 404, the substrate support fingers 412 in the deposition station 404 can be used to remove the substrate from the substrate transport device 305 and the substrate is placed for processing. The method of placing the substrate generally involves placing the substrate close to the upper shackle 4 1 8 for a pre-cleaning process. The pre-cleaning process comprises dispensing a pre-cleaning solution onto the substrate using a dispensing arm 40 8 (S ) 44 1343840, wherein the pH of the pre-cleaning solution generally approximates the pH of the electrolessly-bonded liquid used in the subsequent stages, such that the pre-cleaning solution The surface of the substrate can be adjusted to reach the pH of the electroless plating solution. The pre-cleaning solution can be an alkaline solution having the same base as the electroless plating solution used after the conditioning step. Pre-cleaning the surface of the substrate with a solution having the same pH as the electroless plating solution can also improve the wettability of the surface of the substrate during the deposition process. The pre-cleaning solution can be heated or cooled as required by the process.

After conditioning the surface of the substrate with an alkaline solution, the next step in the electroless plating process is to apply a keying solution to the surface of the substrate. The keying liquid generally includes a metal such as cobalt, tungsten, and/or phosphorus, etc., which is deposited on the surface of the substrate in the form of a single metal or metal alloy. Electroplating silver is generally an inspective and may have a surfactant and/or a reducing agent to facilitate the electroless plating process. The substrate is typically lowered to a position adjacent to the lower hook ring 419 for the electroless plating step. Thus, the plating solution provided by the dispensing arm 40 8 is outwardly flowed through the edge of the substrate and received by the lower hook ring 419. The plating solution can also be collected by the discharge tube 420b for recycling. Further, during deposition, the back side of the substrate is typically from about 0.5 mm to about 10 mm, or from about 1 mm to about 5 mm, from the upper surface of the fluid diffusion member 405. Between the back surface of the substrate and the fluid diffusion member 405 is a temperature-controlled fluid (generally a heating fluid) which can be deionized water dispensed through the flow holes 407 in the fluid diffusion member 405. The temperature-control fluid dispensed from the flow-through hole 407 contacts the back surface of the substrate to conduct heat contained in the fluid to the substrate to heat the substrate for use in the electroless plating process. The entire electroless plating process is generally continuous supply of temperature control fluid. The flow rate of the fluid contacting the back side of the substrate can be controlled during the electroless plating process to maintain the substrate temperature. In addition, when the electroless plating process is performed, the substrate can be about 1 0 > S ) 45 1343840

Rotate from rpm to about 100 rpm, which promotes heating and separation of the keying liquid on the surface. After the deposition process (or electroless plating process) is completed, the surface of the substrate is washed by a post deposition cleaning process, and the post-deposition cleaning process includes depositing a cleaning solution onto the substrate after application to deposit a cleaning process which can be processed thereon. The position or the lower processing position is determined by the compatibility of the process chemicals. The post-deposition cleaning solution typically comprises a solution having a pH approximately the same as the plating solution. The substrate is transferred during processing so that the cleaning solution is spun off the surface of the substrate. Upon completion of the processing of the roll, for example, deionized water can be used to wash the surface of the substrate and spin dry to retain the chemicals on the surface of the substrate. Alternatively, the substrate may be dried by steam by applying a solvent such as acetone, ethanol or the like at a high vapor pressure. According to the embodiment of the system of the present invention, the process chamber position 102 can be used for the electroless pre-cleaning process, the electroless activation process, and the non-activation process, and the process chamber position of 104, 1 1 0 can be an electroless plating chamber. Post deposition process chamber. According to this configuration, when the activated chemicals and the deposited materials are dispersed into the respective process chambers, another advantage of the chemical configuration that can be recycled for each process is that the processes of the fluid process chambers are 102, 104, and 1 112. When the space is within the process enclosure 302, the substrate is converted from an activation liquid to an electroless deposition solution in a gaseous environment. Furthermore, during the processing, the process enclosure is filled with an inert gas, so that there is substantially a small percentage of oxygen in the closure zone 302, and the oxygen content is, for example, about 1000 ppm, preferably less than about 5. 0 ppm, or more, less than, ppm. Here, the substantially reduced oxygen content, the activation chamber, and the 46-dispersion are combined. After the base is alkaline, it is rotated [after, after the residue, it, after 112 electricity and no chemical. 10, the inert load and the process seal, such as the distance between the small 10 electroplating 1343840 chambers, and the rapid transfer between each other (generally less than 1 sec), can avoid oxidizing the surface of the substrate between the activation step and the deposition step This is the challenge of traditional electroless plating systems.

In all fluid processing steps of the present invention, the substrate locations may be different. In particular, the vertical position of the substrate relative to the fluid diffusion member 405 can be varied. For example, the distance from the fluid diffusion member 405 can be increased to reduce the substrate temperature as required by the process. Similarly, the distance between the substrate and the fluid diffusion member 405 can be shortened during the process to increase the substrate temperature.

Another advantage of embodiments of the present invention is that the system 1 can use compatible or incompatible chemicals. For example, in the treatment process using incompatible chemicals (such as acidic activation solution and alkaline plating solution), the acidic solution can generally only be used in one process chamber or station, while the alkaline solution can only be used in another process. Room use. The process chamber can be disposed adjacent to each other and the substrate can be transferred between the process chambers by one of the transfer devices 305. The substrate is typically cleaned in the original process chamber before being transferred to an adjacent process chamber to avoid contamination of the other process chamber by chemicals in the original process chamber. In addition, multiple processing locations in each process station or chamber (such as the location of the shackle 4 1 8 , 4 1 9) allow for the use of incompatible chemicals in a single process chamber or station, and the chemicals may be different The shackles 4 1 8 , 4 1 9 are collected and remain separated. Embodiments of the invention may also be used in single-use chemical processing chambers, in other words, a single dose of treatment chemicals may be disposed of after a single substrate, ie, discarded without recycling the solution, meaning that the solution is no longer recovered for disposal. Substrate. For example, System 1000 can utilize a common process chamber to activate, clean, and/or post-treat substrates, while other process chambers are utilized for electroless plating, and/or post-deposition cleaning processes. Because each process may use a different chemical, the process chamber typically supplies the required chemicals to the substrate and, after the process is complete, drains the used chemicals. However, process chambers generally do not recycle chemicals because recycling of different chemicals from a single process chamber can cause contamination problems.

Other process chambers that can be used in embodiments of the present invention can be found in U.S. Patent No. 6,25,223, entitled "In-Situ Electroless Copper Seed Layer Enhancement in an Electroplating in Electroplating Systems". "System"", the announcement is July 10, 2001, and US Patent Application No. 1 0/036, 3 2 1 , the name "Electroless Plating System", the application number is 2001 12 The application for the month of 26 , is attached for reference. Spray Dispense System

Figure 9 is a cross-sectional side elevational view of one embodiment of a fluid processing chamber 1 0 1 0 facing upwards, similar to each of the process stations 402, 404 described above. As shown in Figure 9, the substrate 1250 is placed face up. Although the embodiment of the fluid processing chamber 1010 described herein completes a process in a face-up manner, aspects of the present invention are not limited to the direction of the substrate, so-called "electroless process" (or electroless process). All steps including depositing an electroless plating film onto a substrate, including, for example, one or more pre-cleaning steps (substrate preparation steps), electroless activation steps, electroless plating steps, and post-deposition cleaning and/or washing steps. Fluid processing chamber 1010 includes a chamber body 1015. The chamber body 1015 can be manufactured by using various materials that do not react with the fluid treatment solution (electroless v thermoelectric a electrochemical plating). Materials include plastic materials, 7-leaf non-materials and ceramic materials. Referring to Fig. 9, the main body of the chamber 1 〇 1 5 is set as a circle or a rectangular body as the side wall of the processing chamber 1010. The main body of the chamber 1〇15 is reddish~ the bottle is assembled and supported by an upper cover assembly 1〇33 at its upper end. An integrated bottom wall 1〇6 is provided along the bottom of the chamber body (8) 5. The bottom portion 1 has an opening to accommodate the substrate-receiving assembly 1299. The features of the substrate support assembly 1299 will be described below. In an embodiment, the substrate support assembly 1 299 generally includes a base member 1 304 and a fluid diffusion member 丨3〇2 coupled thereto. The substrate support assembly 1299 shown in Figures 9 through 12 illustrates another embodiment of the platform assembly described above. - An annular seal 塾 1121 (e.g., a ring seal 塾) is provided adjacent the periphery of the flow diffusion member 1 302. The annular seal 塾 ” is generally used to knit the upper and outer edges of the base structure # 13G4 to form a tight flow sealing zone between the flow diffusion member 1 302 and the base member 1304 to facilitate the flow transmission. The member 13〇4 generally defines a solid disc member having an integral 1308 extending through the center or other position of the base member 1304. The base member 1 3 0 4 is a ceramic material or a coating layer. The metal is made of PVDF material. The fluid space 1310 is formed under the fluid diffusion member 13G2 of the base member 13〇4. In this embodiment, the diffusion is in the base member 1 3 〇 4 above. The fluid space is generally 3 in the body diffusion member! 3G2 and the base member! 3 () 4 have a spacing of about 2 mm to 15 mm, however, the spacing can be larger or smaller. 3 ΐβτ a _ ..., 4, 5A-5E and 7 , the fluid diffusion member 13 〇 2 package <: S ) i 49 1343840 includes a plurality of flow channels 1 306 therethrough. In use, the fluid from the flow vessel inlet 1 308 flows into the closed fluid space 1310 and then through the fluid diffusion member 1 30 The flow path 1 306 in 2 is then re-flowed into the heat transfer zone 1 3 1 2 between the back surface of the substrate 125 and the fluid diffusion member 1 3 02. According to an embodiment, the first-class Zhao heater 1 1 64 is connected to the controller 1 1 1 and a temperature probe (not shown) to ensure that the fluid flowing from the fluid source 1 203 into the heat transfer zone 13 3 2 is maintained at a predetermined temperature. In one embodiment, the fluid source 1 203 is used to transport Ion (DI) water. The heating fluid behind the substrate 1250 can heat the back of the substrate ι25. The uniform and high substrate temperature contributes to the electroless plating process. A plurality of heating coils 1 1 1 2 can be selectively embedded in The base member 1 3 〇4, and can be individually controlled according to requirements, in order to more accurately control the flow into the heat transfer zone! The temperature of the deionized water and the temperature of the treated substrate. In particular, the individual control heating coil i丨丨2 Precise control of the substrate surface 'This is important for electroless plating processes. Figure 9B depicts another heating method that removes the heating coil 1112 from the base member 1 3 04 and retrofits to the fluid diffusion member 1 3 〇2. In order to achieve this design, the base member 1 304 can be changed. And increasing the size of the fluid diffusion member 1 302 "When the deionized water flows through the fluid inlet 13 〇 8 , the fluid diffusion member 1 302 and the flow channel 1 306 , it then flows into the back surface of the substrate 125 与 and the fluid diffusion member 13 〇 A heat transfer zone 1312 between the two. In this configuration, the separate fluid heaters 1 1 64 are selectively removable. It should be noted that the flow channels 1 306 can be used to direct deionized water to the substrate 125. back. The water on the back side of the substrate 125 can not only heat the substrate 1 2 50, but also prevent the electroless plating solution from improperly contacting the back surface of the substrate 1250. The base member 1 304 and the fluid diffusion member 1 302 may be made of Taman materials.

(S 50 1343840

(such as fully pressed aluminum nitride, alumina (Al2〇3), tantalum carbide (SiC)), polymer coated metal (such as TeflonTM coated aluminum or stainless steel), Polymer materials, or other materials suitable for semiconductor fluid processing. Preferred polymeric coatings or polymeric materials are fluorinated polymers such as Tefzel (ETFE), Halar (ECTFE), PFA, PTFE, FEP, PVDF, and the like.

A plurality of substrate support fingers 1300 are generally placed adjacent the edge of the fluid diffusion member 1302. The substrate support finger member 1300 is for supporting the substrate 1 250 to be positioned a predetermined distance ' above the fluid diffusion member 1 3 0 2 to form a heat transfer region 1312. When removed and/or placed in the substrate, a mechanical blade (not shown) can be extended between the substrate 1250 and the substrate supporting finger member 1 3 举 to lift and remove the substrate 1 2 5 0 » In addition, a continuous loop (not shown) may be used in place of the substrate support finger member 1 300 to support the substrate. Alternatively, a one-lift pin assembly (not shown) can be used to lift the substrate from the continuous loop. As such, the mechanical blades can extend below the substrate 1250 and transport the substrate 1250 into and out of the processing chamber 1010. The fluid processing chamber 1010 further includes a slit 1108. The slit 1108 defines an opening through the side wall of the chamber body 1015 for an arm (not shown) to enter and exit the processing chamber 1010 to receive the substrate 125. Referring to the processing chamber 1010 of Fig. 9, the substrate support assembly 1299 is selectively axially movable and rotated about the substrate support 1301 by the upper bearing 1054A and the lower bearing 1054B. To this end, a substrate lift assembly 1 0 60 is first provided. The substrate lifting assembly 1 0 6 0 includes a substrate support assembly motor 1 062. In one embodiment, the substrate support assembly motor 1 062 is a precision motor for rotating a lead screw 1061. The rotation of 51 1343840 of the support assembly motor 1062 translates into a linear movement of a finger slide i 064. The finger slide 1 064 moves along the slot cover 1 〇 6 6 to drive the carriage 1 0 6 4 up and down. Here, the 'discipline assembly motor 1062 is preferably activated by electric power. Alternatively, the substrate support assembly motor 1062 can be a pneumatic cylinder.

The substrate lift assembly 1 060 also includes a substrate support finger motor 1052. The finger member motor 1 052 rotates the substrate support finger member 1 300 and the supported substrate 1 2 50. The rotation of the substrate supporting finger member 1 300 is centered on a central axis formed by the non-rotating substrate support 1301. The rotational speed of the substrate support fingers 1300 can vary depending on the requirements of the particular process (e.g., deposition, washing, drying). In the deposition process, for example, the substrate support assembly can be operated at a lower rotational speed, for example, between about 5 rpm and about 150 rpm, depending on the viscosity of the fluid and the inertia of the fluid dispersed onto the surface of the substrate 1 250. And set. Taking the strip process as an example, the substrate supporting finger member 1 300 can take a medium rotational speed, for example, between about 5 r p m and about 1 0 0 r p m . In the case of a drying process, the substrate support assembly can be operated at a relatively high rotational speed, for example between about 500 rpm and about 3000 rpm, to spin dry the substrate 1 250.

The substrate support 1301 is attached to the bottom of the processing chamber or the platform 1 〇 12 through the bottom members 1013, 10M. Thus, in a preferred embodiment, the base member 1 3 04 does not move with the substrate lift assembly 1 060, but rather serves to guide the substrate support finger member 1 300. Upper bearing 1 054A and lower bearing 1 054B are used as supports. The substrate support 1301 can also serve as a conduit for wires (not shown), as well as a fluid inlet 1308 for the supply line 1166. The wires and tubing are through a base conduit 1305 in the base 1014. Figure 9A is a cross-sectional side view of the faceless electroless process chamber (electroless 52 i S 1343840 processing chamber) in Fig. 9. Wherein, the substrate lifting assembly 1060 is in the raised position. The substrate 1 250 is lifted off the surface of the base member ι3 〇 4, and since the substrate is not heated by the fluid contacting the fluid space 1310 and the base member 13 〇 4, the process is at room temperature of the processing chamber 1 〇 1 〇 Go on. This raised position is also the position where the substrate 1250 is placed before the robot arm enters the treated substrate 1250.

The processing chamber 1 0 1 0 also includes a fluid introduction system 1 200. Fluid introduction system 1 200 is used to deliver various treatment fluids (e.g., solution sources i 2 〇 2, 1 204, 1206, etc.) to the receiving surface of substrate 1250. The amount of fluid used in the treatment chamber loio will vary depending on the application and may be more than the three solutions indicated in Figure 9. A metering pump 1 208 is connected to each of the solution sources 1 202, 1 204, 1 2 0 6 . In addition, a distribution room 1 2 〇 9 is used to control each solution source 1 2 0 2

1 2 04, 1 2 0 6 Discharge solution to each corresponding front end line 1 2 1 0 » Solution source 1202, 1204, 1206 treatment solution is passed through inlet tube 1225, and is selectively guided from front end line 1210 to processing chamber 1〇 1〇. Typically, as shown in Section 9, 'Distribution valve 1 209 can be used to wash front end line 1 2 1 0 when the chemical has been transferred from the processing fluid source upstream of dispensing valve 1209. According to an embodiment, the inlet tube 1225 can inject a gas from a gas source 1207 connected thereto to remove residual fluid. A filter 11 62 can be selectively installed in the fluid introduction system 1 200 to prevent particles from upstream of the filter 116 2 from contaminating the fluid processing chamber 1 0 1 〇 'and thereby contaminating the substrate 1 250. If the inlet tube 1 2 2 5 is to be washed before or during the removal of the substrate, the addition of the filter will greatly increase the time for the line to be washed (due to the large surface area of the membrane), so that the filter can be omitted. 53 1343840

In another embodiment, a heater 161 is disposed in the fluid introduction system 1 200 to heat the fluid prior to flowing into the treatment zone 1 0 2 5 . The heater 1161 used in the present invention may be any form of device as long as it can introduce energy into the treatment fluid. Preferably, the heater 1 16 1 is an envelope-type heater (e.g., by heating the fluid through the inlet tube sidewall) rather than an immersed heater (e.g., directly contacting the solution with a heating element). The heater 1 1 6 1 can be connected to the controller 1 1 1 to ensure that the fluid flowing into the treatment zone 1 0 2 5 of the fluid processing chamber 1 0 10 is maintained at a predetermined temperature.

In yet another embodiment, the heater 1 16 1 is a microwave power source that conducts heat rapidly to the microwave cavity of the processing fluid. According to an embodiment, the microwave power source operates at a frequency of 2.54 GHz and has a power of from about 500 watts (W) to about 2,000 watts. According to one embodiment of an in-line microwave cavity heater, it is possible to immediately heat the fluid to an optimum temperature range before flowing various fluids (e.g., cleaning fluid, washing fluid, post-cleaning fluid, etc.) into the processing chamber. In one embodiment, two microwave heaters can be used to selectively heat fluid from each of the fluid lines of fluid introduction system 1 200. Therefore, in use, the fluids provided by the respective solution sources 1 2 0 2, 1 2 0 4, and 1 2 06 can be delivered to the surface of the substrate at different temperatures. In another embodiment, a fluid degassing unit 1 1 70 is disposed in the fluid introduction system 1 200 to remove gases trapped or dissolved in the fluid prior to flowing the treatment fluid into the treatment zone 1 025. Since the oxygen dissolved in the fluid inhibits electroless plating, oxidizes the exposed metal surface, and affects the etch rate of the electroless cleaning process, the use of a fluid degassing unit helps reduce corrosion and/or oxygen in the processing fluid. Process variability. The fluid degassing unit is generally a unit device capable of extracting dissolved gases from the fluid, such as a 54!34384〇 gas permeable membrane and a vacuum source. The flow degassing unit can be purchased, for example, from Mykrolis Corporation of Billerica, Massachusetts, USA.

Referring to fluid processing chambers 1 of Figures 9, 9A and 9B, the embodiment of the fluid introduction system 1 200 transports the treatment fluid to the surface of the substrate 1 250 through one or more nozzles 1 4〇2. In particular, the processing fluids of solution sources 1 202, 1 204, 1206 are selectively delivered to the receiving surface of substrate 1250 via a fluid delivery arm 1 406. A plurality of nozzles 1 402 are arranged along the fluid transport arm 1406. Nozzle 1402 receives fluid from inlet tube 1225 and directs the processing fluid to the receiving surface of substrate 1 250. Nozzle 1402 can be disposed at one end of delivery arm 1406 or along the entire delivery arm 1406. As shown in Figures 9, 9A and 9B, 'a set of nozzles 1 4 2 2 are equidistantly placed β. In one embodiment, one or more fluid introduction systems 1 200 and/or nozzles 1 402 are connected to Figures 3 and 4 The dispensing arm 406 and/or the dispensing arm 408.

As shown in Fig. 9, the length of the fluid transfer arm 1406 can be such that one end extends across the center of the substrate 1250. Preferably, at least one nozzle 1402 is disposed at the end of the fluid transfer arm 1604. Preferably, the fluid delivery arm 丨4 〇 6 is movable by a dispensing arm motor 1404 for returning the fluid delivery arm 1406 to the center of the substrate U50. Referring to Figures 9, 9 and 9, the fluid transfer arm 1 406 pivots in response to the operation of the dispensing arm motor 1 4〇4. The distribution arm motor 1 404 is preferably provided in a protective member! 4丨〇 rear, the distribution arm motor 1404 and the processing area 1〇25 are partially separated. In one embodiment, the fluid transfer arm 1 406 is not worth to be framed and more axially movable (Fig. 9 & Fig. 9B is a cross-sectional view of another embodiment of the upwardly facing electroless process chamber of Fig. 9; Among them, the fluid wheel arm 14〇6 is connected-pumped

55 To the motor 1 Ο 8 Ο (for example, linear motor). The axial movement of the flow transport arm 1 4 Ο 6 allows it to selectively move closer to the substrate 1250 as needed. Figure 10 is a top plan view of the face-up electroless process chamber of Figure 9. The flow-through transport arm 1 406 of the 'fluid introduction system 1 200 is disposed in proportion to the mounting base 1 250. It is shown that the four supporting finger members 1 3 0 0 are the base material 1250. In this view, the fluid transport arm 1406 is rotated away from the substrate. The position of the substrate 1 250 can be raised by the finger member 1 300 by the substrate lifting assembly 1 60 described above. However, 'arrow 1 004 indicates a path through which the fluid delivery arm 1406 can be rotationally moved' to indicate that the fluid delivery arm iAOG can rotate the nozzle 1402 above the substrate 1250 during the process. In one aspect, the fluid delivery arm 1406 can perform rotational and/or vertical movement during dispensing of the fluid to the surface of the substrate to achieve a uniform or desired treatment fluid distribution on the surface of the substrate. The transfer arm 1 406 can be rotated and/or vertically moved by the distribution arm motor 1 404 and the axial motor 1 080. Movement of the fluid transfer arm 1406 over the substrate 1250 improves the condition of the fluid covering the substrate 1 250. Preferably, when the nozzle 1402 disperses the fluid, the substrate supports the finger member 1 300 and the substrate 1250 to be rotated. This enhances the uniformity of fluid dispersion and increases the productivity of the system. In another embodiment, the delivery of the treatment fluid is through one or more nozzles disposed on the fluid delivery arm 1406 adjacent the axis of rotation of the substrate while simultaneously utilizing the nozzles on the delivery arm 1406 adjacent the outer edge of the substrate. To transport carrier gas (such as gas or argon). During fluid transport, the substrate is preferably in a rotating state. A carrier gas that is advanced into the edge of the substrate 1250 forms a gas blanket near the processing region 1025. Gas blanket can exclude any residue

S 56 1343840 Oxygen remaining in the treated area. Those skilled in the art of electroless plating will understand that oxygen can adversely affect specific steps, such as chemical activation steps.

In one embodiment, the nozzle 1402 is an ultrasonic spray nozzle or an air atomizing nozzle. Figure 13 is a cross-sectional view of one of the aerosol type nozzles 1 4 02. It is an internal fluid mixing nozzle. That is, the fluid is internally mixed and produces a fully atomized treatment fluid spray. As such, the carrier gas will contain a treatment solution that directs droplets of the surface of the substrate. In one embodiment, the carrier gas is an inert gas, such as argon, nitrogen, or helium, which can be used to deliver the atomized process fluid to the surface of the substrate.

Referring to the nozzle 1 402 design of FIG. 13 , the nozzle 1 402 includes a body 1 426 and a tip 1 424. Tip 1424 typically has a diameter of from about 10 microns to about 200 microns. In one embodiment, the tip 1 424 has a diameter of from about 10 microns to about 50 microns. When the gas supply source 1 244 feeds the high pressure gas, it causes a venturi effect to generate suction so that the fluid can flow through the tip 1424. In Figure 13, body 1426 has separate channels 1422, 1420 to each receive liquid and gas. The liquid passage 1422 merges with the gas passage 1 420 at the tip 1 424 to mix the liquid with the gas. This can be referred to as the "concentric venturi design". Thus, the fluid dispersed by the nozzle 1 4 2 2 is premixed and produces a fully atomized spray. The particular tip 1424 of Figure 13 is designed to form a circular spray pattern. However, other forms of nozzles can be used to create other spray patterns, such as flat or fan spray patterns. Figure 14 is a cross-sectional view of another design of the aerosol-type nozzle 142. It is an external fluid mixing type nozzle. Refer to the nozzle setting in Figure 14 (S) 57 14241343840

The nozzle '140' includes a body 1426 and a tip end 1424. The diameter of the tip is typically from about 1 micron to about 200 microns. In another embodiment, the tip 1424 has a diameter of from about 10 microns to about 50 microns. As shown in Fig. 14, the body 1426 has separate channels 1422, 1 420' for the respective liquid and gas. However, the liquid passage 1422 now passes the liquid through the nozzle, regardless of the gas passage 1420, so that the liquid mixes with the gas and the body 1426, but mixes outside the tip 1424. This can be: Parallel venturi design. The advantage of this arrangement is that it can control the inflow of gas and liquid separately, so it can provide a more liquid and grinding suspension. The internal mixing nozzle is just the opposite gas. Flow rate affects liquid flow. According to one embodiment, a conventional ultrasonic nozzle (similar to the nozzle of the first 3) can be used to generate a sprayed atomized treatment fluid sprayed onto the receiving surface of the substrate. Compared to the liquid stream, direct spray It saves the use of expensive electroless plating solution. It also covers the receiving surface more evenly. Moreover, when the base member motor 1 052 rotates the substrate 1 250, a fluid boundary layer is generated. Since the shape of the boundary layer on a rotating disk surface is generally parallel to the surface of the substrate in either direction, the fog can be improved. The distribution of the surface of the processing substrate 1250. Compared to the spray design that traditionally produces a liquid flow substrate surface, the non-uniform pattern produced by one or more nozzles can be controlled by controlling the atomized fluid to be delivered to the boundary layer on the surface of the substrate. A layer effect atomized treatment fluid is preferred. A fluid supply provides fluid delivered to the nozzle 丨 402. Figure 14 shows a storage tank 1212. The sump 1212 includes a fluid inlet 丨J, and the receiving 1402 is not in the reference type of south viscous, and it is 14 L. The phase treatment material supporting surface or body is in the impact spray minus 13 and I2lg 58 1343840 with an exhaust port 1214. The exhaust port 1214 is in communication with the atmospheric pressure. In addition, a fluid outlet 1 2 16 is provided. When the fluid is delivered, the gas of the gas supply source 1 2 44 is transmitted to the nozzle 1402 at a high speed because it communicates through the exhaust port 1214. At atmospheric pressure, a relatively negative pressure can be created in the fluid passage 1422. Then, the fluid is forced to flow out of the α 1 2 16 and into the nozzle 1 402.

In general, the treatment fluid output by fluid introduction system 1 200 can be an osmotic fluid, an electroless plating solution, and/or a cleaning fluid that is dispersed to the surface of the substrate as the process progresses. In an embodiment, the treatment fluid is an activation fluid. Examples of the activating liquid include palladium salts containing a vapor, a bromide, a fluoride, a bromine fluoride, a sulphate, a nitrate, a sulfate 'carbonyl compound, a metal salt, and a combination thereof. In one embodiment, the palladium salt is a vapor, such as palladium on gas (PdCl2). In another embodiment, the palladium salt is a nitrate, an alkyl sulfonate, or other soluble Pd + 2 derivative, the derivative comprising an uncoordinated anion and not in solution or on a metal surface Produce aggregation. In one embodiment, the waiting time between the end of the use of the copper cleaning fluid and the initiation of the use of the activating fluid is generally less than about 15 seconds, preferably less than about 5 seconds. The activation fluid is typically used to deposit an activated metal seed layer onto the exposed copper layer of the features. Since the resistance of copper oxide is greater than that of copper, oxidizing the exposed copper layer after cleaning the copper adversely affects subsequent processing steps. Shortening the waiting time between copper cleaning and activation reduces the deuteration reaction, and as described above, the formation of a carrier gas environment near the fluid processing chamber also avoids oxidation of the exposed copper layer. In one embodiment, the treatment fluid is an electroless plating solution. In one embodiment, the capping layer deposited by the electroless bonding method is a metal alloy including cobalt phosphorus alloy (CoP), cobalt tungsten phosphate alloy (CoWP), cobalt boron alloy 59 1343840

(CoB), cobalt tungsten boron alloy (coWB), cobalt tungsten boron boron alloy (C〇WPB), nickel boron alloy (NiB), or nickel tungsten boron alloy (NiWB), and preferably includes CoWP or CoWPB. The electroless chain solution used to form the cover layer may comprise one or more metal salts, and one or more reducing agents, depending on the cover material to be deposited. It is generally well known that electroless bond solutions can also include pH adjusting agents such as acids or bases. If the cover layer contains a drill, the electroless bond solution typically includes a drill salt. Examples of the drill salt include chlorides, bromides, fluorides, acetates, bromofluorides, iodides, nitrates, sulfates, salts of other strong or weak acids, and/or their progenitors. Preferably, the 'cobalt salt comprises a sulphuric acid drill, a gasified drill, or a combination thereof. If the tungsten-containing coating is to be deposited' then the electroless solution comprises a tungsten salt. Preferably, the <tungsten salt comprises a tungstate such as tungstic acid or tetramethylammonium tungstate or a salt obtained by the reaction of neutralizing tungstic acid. If a nickel-containing coating is to be deposited, the electroless plating solution generally includes a nickel salt. Examples of the nickel salt include gasification, bromide, fluoride, acetate, bromine fluoride, iodide, nitrate, sulfuric acid, carbonyl, strong acid or weak acid salts, and/or combinations thereof.

If the covering material contains ruthenium, such as CoP, CoWP, or CoWPB, the reducing agent preferably includes a phosphorus compound such as hypophosphorous acid (H2PO2). If the cover material comprises a shed, such as CoB'CoWB, or CoWPB', the reducing agent generally comprises a boron compound, a dimethylamine borane (DMAB), a non-acceptable metal salt of a boron hydride anion (BH4-), or a combination thereof. It is also possible to add other reducing agents or to replace the above reducing agents, such as hydrazine. In one embodiment, a copper co-reducing is utilized to initially treat the copper layer. It should be unintentionally that the electroless plating solution (treatment fluid) and/or the substrate can be heated 60 1343840

To a predetermined temperature. The temperature is, for example, between about 40 ° C and about 95 ° C. On the one hand, heating the electroless plating solution (treatment fluid) and/or the substrate structure can increase the electroless plating rate. This also compensates for the temperature dropped by the process fluid after it exits nozzle 1 402. In one embodiment, the deposition rate of the cover layer is about 1000 angstroms per minute or faster. In one embodiment, the cover layer is deposited to a thickness of from about 100 angstroms to about 300 angstroms, preferably from about 150 angstroms to about 200 angstroms. Since the deposition rate of the electroless plating process is temperature dependent, the substrate temperature can be maintained at a uniform temperature. Therefore, the heating coil 1112 and/or the heater 1164 of the base member 1 3 04 in Fig. 9 can be used.

The fluid processing chamber 110 also includes a fluid discharge system 1 240. The fluid discharge system 1 240 generally includes an outlet line 1227 that connects the fluid discharge device 1 249. Alternatively, more than one outlet line 1227 can be provided adjacent the processing chamber 1010 to evenly dispense fluid from the processing chamber 1010. Referring to Figure 10, four generally equidistantly disposed outlet lines 1 2 2 7 are illustrated. A plurality of outlet lines 1 2 2 7 can be connected to a single discharge space and fluid discharge device 1 249. The fluid discharge device 1 249 then delivers the effluent from the process chamber to a waste collection and discharge device (not shown). In summary, the treatment fluid generally flows through the inlet tube 1225, the nozzle 1 402 on the fluid delivery arm 1406, flows outward through the treatment zone 1 025 and flows to the substrate 1 250, and then flows out of the one or more outlet lines 1227. . Fluid discharge system 1 240 includes an exhaust device. An exhaust inlet 1 246 extends through the wall of the chamber body 1015. An exhaust system 1248 draws gas from the treatment zone 1 025. In one embodiment, the exhaust gas inlet 1 246 is an annular space for uniformly extracting the gas below the surface of the substrate 1 250, and then changing 61 1343840

Good airflow near the surface of the substrate 1250. Figure 11 is a cross-sectional view of another side of the fluid processing chamber 1010. Fluid introduction system 1 200 is used to deliver fluid to the receiving surface. The treatment fluid is passed through one or more nozzles 1 402. In this embodiment, the nozzles 1 402 are disposed in the upper cover assembly 1 〇 33 within the interior 1030. Referring to Figures 9, 9A-9B, 11, and 11A-11B, the upper cover includes a porous disk 1030. Preferably, the porous disk 1030 is a disk having a hole through which the fluid circulates. Examples of multi-disk materials are ceramic materials (such as alumina), polyethylene (PE), polypropylene, and PVDF in which the fluid circulates. In one embodiment, high efficiency particulate air (High Efficiency Particulate Ai filtration system. Typically, the HEPA filtration system uses a paper fiber material. Figures 9, 9A-9B, 11, and 11A-11B are mostly Supported by the upper support ring 1031. The process chamber upper cover assembly further includes a support ring 1 〇 3 1 on the upper cover 1 032' and a porous disk 1 030. The space between the upper cover assembly 1 033 and the porous disk 1 030 forms 1034. According to an implementation For example, the porous disk i 03 密 is closely attached to the upper cover 1 〇 32 by two cymbal pads 1036 ′ 1037. The configuration of Fig. 11 is supported by the porous disk 1030 and the upper support ring 1 〇 31. The upper cover assembly as shown in Fig. 11 1 〇3 3 The body shown in the embodiment extends from the solution source 1202, 1204, 1206 material 1250' into the σ tube 1225 through the inlet tube 1 225 through the upper cover 1032, and then - or more of the orifice plate 1 03 0 Nozzle! 4〇2, to process the substrate of the embodiment 1 250 f. The porous disk assembly of the porous disk assembly 1 0 3 3 holes or fines including ceramics and other holes with a hole configurable r; HEPA) Disk 1 0 3 0 1 〇3 3 General cover 1 032 One inflated ring seal upper cover 1 032 Process flow up to base the tap was directed to (S) 62 1343840

The surface of the substrate. In one aspect, to uniform the flow of gas in the treatment zone 1025, a line 1040 can be used to provide a flow path for gas from the gas supply source 1038 through the plenum 1034 and the porous disk 1030 to the treatment zone 1025. The valve 1 0 3 5 of the communication plenum 1 0 3 4 and the gas supply source 1 0 3 8 can be selectively opened and closed. According to an embodiment, the gas supply source 1 〇 38 provides an inert gas (e.g., argon, nitrogen, helium, or a combination thereof) to the treatment zone 1025. According to another embodiment, the gas supply source 1038 provides an oxygen-containing gas to the treatment zone 1 025. It should be noted that oxygen does not adversely affect some process steps. For example, oxygen can be supplied during the activation step. Preferably, a carrier gas containing a suitable proportion of hydrogen and oxygen can be transported to the processing zone 1 025 by the porous disk 1030.

The plenum 1034 and the porous disk 1030 are positioned above the substrate 1250 to transport the carrier gas in a laminar flow onto the substrate 1 250. The laminar flow mode produces a uniform and vertical flow of substrate 1250. As such, a uniform boundary layer is created around the substrate 1250. As a result, heat loss around the substrate 1250 becomes more uniform, and water and chemical vapors are reduced to condense on the wafer. The porous disk 1 0 3 0 can be used as a gas flow diffusing element. The gas flowing through the porous disk 1 0 30 0 helps to direct the treatment fluid flowing out of the uniform dispersion nozzle 1402 to the receiving surface of the substrate 1 250. Finally, the gas is exhausted from the exhaust inlet 1 246 by the exhaust system 1 248. Exhaust system 1 248 may typically include a pomelo fan or vacuum pump to vent gas out of the fluid processing chamber 101. It is worth noting that the exhaust inlet 1246 helps to ensure that the gas flowing through the substrate 1250 flows in a laminar flow. In an embodiment, a heating element (not shown) is placed adjacent to the inflator S) 63 1343840

1 Ο 3 4 upper cover assembly 1 Ο 3 3 in. For example, a heating coil (not shown) is within the porous disk 1 030. The gas output from the heatable line 1040 can reduce condensation and water droplet formation above the substrate 1250. In one embodiment, the gas line 1 040 is coupled to the fluid lead 1 200 - a fluid (such as a treatment fluid) can be pushed through the porous disk 1 03 0 to flow the gas. Here, the porous disk 1 0 30 can be used as a shower head to deliver a treatment fluid to the surface of the substrate 1250. In one embodiment, the gas line 1 040 can be used not only as a first-class pipeline, but also as a fluid removal line by using a vacuum source 1 〇3 9 in the plenum 1 0 3 4. Vacuum source 1 0 3 9 It is to prevent the fluid on the perforated disk 1030 from coming down before the substrate 1250 is removed from the processing chamber 1010. In this embodiment, a vacuum source 1 0 3 9, such as a vacuum gauge, is used in the inflator 1 03 4 A vacuum is generated therein, whereby the fluid on the lower surface of the 1030 can be drawn upward into the plenum 1034. Fig. 11A is a view of the upwardly facing electroless process chamber in Fig. 11. wherein a flow diverter 1102 is provided The processing chamber 1010 flow diverter 1 1 2 2 can be by a conventional lifting mechanism (not shown With reference to Figure 11A, the airflow diverter 1 1 0 2 is in the position, so that the substrate 1250 can be moved into and/or out of the fluid processing chamber. Figure 11B is the face-up powerless in Figure 11 A side view of the process chamber having an air flow diverter 102. Here, the air flow 1102 is in a raised position, so that it can be used to "horse" or direct the treatment solution (such as a treatment solution spray) during the process. The flow direction of the nozzles 1402 1250, and the gas from the gas supply source 1038 and the porous device, are introduced into the system, rather than being used to transport the vacuum into the profile side of the drop-flow flow porous disk. The top is down 1010°, the other 咅 U steering gear is ”" and to the substrate tray 1030 64 1343840

The flow direction to the substrate 1 250. Thus, the airflow diverter 1 102 can improve the reproducibility and particulate nature of the process and process gas flow by the amount of flow barrier and by controlling the flow of the fluid. A device may be provided as needed to observe the distribution of fluid on the 1250 from outside the processing chamber 1010. Referring to Fig. 1, a photographing apparatus is provided in the processing chamber 1010. The photographing device 1360 can be placed at the wall of the chamber body, below the porous disk 1 0 3 0 , along the upper support ring 1 0 3 1 , or at the position where the substrate 1 2 50 is observed. Preferably, the photographing device 136 is attached to a fixed portion of the upper cover. According to the embodiment of Fig. 1, the photographing device is fixed to the upper support ring 1031. The photographing device 1360 is preferably a charge coupled (CCD) camera that is coupled to the controller 1 1 1 and uses a facultite to record digital images. A screen (not shown) is provided in the processing chamber 10 1 to provide an optical image of the surface of the substrate 1 250. Thus, it is possible to immediately observe the case where the substrate 1250 is covered by the electroless plating when the fluid is being separated or when the deposition process is performed. In order to support the photographing device 1 3 6 0, a light source (not shown) may be added. Preferably, it is fixed to the upper cover, but it can also be placed adjacent to the processing area 1025. The light source is used to illuminate the substrate 1 250 when the process is performed. In one embodiment, photographic device 1 360 is used to detect visible spectral range lines. The method of observation and confirmation is preferably a manual monitoring method. However, in practice, observation and confirmation can be performed through mechanical monitoring. Here, the image of the sub-covered substrate 1 250 is transmitted to the controller 1 1 1 (see controller 1 1 1). According to an embodiment, the controller 1 1 1 then monitors the restriction fluid substrate 1360 10 15 适 - ό ό ό 360 360 360 360 360 360 360 360 360 360 0 0 0 0 0 0 上述 上述Fluid ¢5:) 65 1343840 The sputum image generated by the photographic device 1 306 during the dispersion process, and compares the image with the pre-stored image or other data, whereby the controller 111 can determine various parameters of the process. For example, the fluid will not stop dissipating until the actual substrate image detected by the camera's 132 pixels matches the pre-stored image.

In an embodiment, the photographing device 1 360 can be an infrared camera. The infrared camera filters out the visible wavelength and recognizes the thermal wavelength. The temperature can be converted to color or the intensity of the detected signal. The difference in color in the image can be used as an indicator of the temperature difference of the object (eg substrate 1 2 50). When the temperature of the dispersion fluid is different from the surface temperature of the substrate 1250, this temperature difference is converted into a color difference. Therefore, the fluid will continue to be dispensed until the temperature difference is eliminated, thereby serving as an indicator of completely covering the substrate 1 250. Preferably, the temperature difference can be observed by a mechanical monitoring method such as a controller and a photographing device 1360. This ensures that the substrate is completely covered.

In another embodiment, the photographic device 1360 can be a spectrometer for receiving light, and outputting data of various wavelengths and intensities of light. For example, red light has a strong light composition intensity in the low wavelength range in the visible spectrum. Spectrometers typically include an optical prism (or grating) interface to optically separate the incident signal into a light component and project it onto a linear C C D detector array. An embodiment of the spectrometer can include a C C D detector array of thousands of individual detection elements (e. g., pixels) to receive the spectrum produced by the prism (or grating). Collecting the data of the intensity corresponding to the wavelength, and then the controller 111 connected to the photographing device 1360 can compare the currently received information with the previous information or the user-defined value, thereby controlling the electroless plating process step or the process variable (such as fluid coverage, Processing time, substrate temperature, substrate speed, etc.), enter 66 1343840

The process results are optimized. In one embodiment, the photographic device 1366 operates under closed circuit control (c) οpc ο ntr ο 1 ), and the closed circuit control utilizes the soft vibrating fluid transport arm 1 406 to move and fluid From the flow of nozzle 1 402, it is ensured that the surface of the substrate 1 250 is continuously covered by the fluid. The closure can be performed using the photographic device I 360, the distribution arm motor I 404', and other components in the inflow system 1200, all of which are connected to each other and controlled by the controller 1. Figure 12 is a cross-sectional view showing still another embodiment of the upward facing fluid processing chamber 1010. Here, the treatment fluid is sprayed through the nozzle provided on the porous disk 1 0 3 0 to be concentrated on the receiving surface of the substrate 1 250. In this embodiment, the porous disk can be selectively raised or lowered relative to the substrate 1250. In particular, the process lid assembly 1033 can be moved axially relative to the substrate 1250. For the upward movement, a processing chamber upper cover element lifting assembly 1079 can be used. - The processing chamber upper cover element starter 1080' of the upper cover assembly 1033 can be regarded as a part of the component lifting assembly 1079. The starter 1080' is preferably activated. And in an embodiment, it is a linear DC servo motor. The speaker 1080' can also be a pneumatic cylinder. In this configuration, by the actuator 1080', the processing chamber upper cover element lifting assembly 079 can control the processing area 1025 between the bit hole disk 1030 and the substrate 1250 to be small. Thus, the substrate 1 2 50 surface can be controlled. Nearby airflow and oxygen content. The embodiments of the upward-facing electroless plating process chamber include a substrate 1 250, but in the case of maintenance or the like, the processing chamber 10 0 0 may also be placed on the support member 1300 (or On the support ring), the sed is optimally controlled by the control unit. The 1402 1030 room is connected to the upper part of the shaft and the power is turned on. The multi-product processing is performed without the base operation 67 1343840. In particular, the fluid introduction system 1 200 and the fluid discharge system 1 240 can be operated without the substrate being placed within the treatment zone 1 0 2 5 . For example, deionized water or other cleaning or washing solution may be injected into the substrate support finger by a fluid delivery arm (such as fluid delivery arm 1 406 of Figure 9) or a fluid delivery tray (such as porous disk 1 030 of Figure 11). Object 1 300 and other processing chamber components. This step can be used to clean the substrate support fingers 1300 and other process chamber components to reduce the particulate content within the process chamber 1010. To further assist in the cleaning step, the fluid transfer arm (Fig. 9B), or the fluid delivery head (12th) can be lowered, or the substrate support assembly can be raised (Fig. 9A). Although the present invention has been disclosed above by way of example, the other embodiments are not intended to be exhaustive. This is because the singularity of the stipulations of the stipulations of the stipulations of the stipulations of the stipulations of the stipulations of the stipulations of the stipulations of the stipulations of the stipulations of the stipulations of the present invention. Portions are depicted in the drawings. It is to be understood that the specific embodiments of the present invention are not intended to limit the spirit and scope of the present invention, and any one skilled in the art can example. Figure 1 is a plan view of one embodiment of a substrate processing system. Figure 2 is a perspective view of one embodiment of an enclosure in an electroless plating system and substrate processing system. Fig. 3 is a perspective view showing an embodiment of an electroless plating system in which the closed region is removed. 68 1343840 Figure 4 is a vertical cross-sectional view of one embodiment of an electroless plating system and an enclosed area. Figure 5A is a vertical cross-sectional view of one embodiment of a fluid processing station. Figure 5B is a vertical cross-sectional view of one embodiment of a platform assembly located in the fluid handling station of Figure 5A. Figure 5C is a vertical cross-sectional view of the platform assembly partially enlarged 5B.

Figure 5D is a vertical cross-sectional view of another embodiment of a platform assembly partially enlarged in a fluid processing station. Figure 5E is a vertical cross-sectional view of one embodiment of a platform assembly located in the fluid handling station of Figure 5A. Figure 5F is a vertical cross-sectional view of one embodiment of a fluid processing station. Figure 6 is a perspective view of one embodiment of a substrate support assembly. Figure 7 is a vertical cross-sectional view of one embodiment of a fluid processing station.

Figure 8A is an enlarged vertical cross-sectional view of one embodiment of a fluid processing station. Figure 8B is a vertical cross-sectional view of one embodiment of a side bank, which is located in the fluid processing station of Figure 8A. Figure 8C is a cross-sectional view of another embodiment of a bank, located in the fluid processing station of Figure 8A. Fig. 8D is a cross-sectional view showing the side bank of Fig. 8C, in which the side bank is in contact with the substrate. 8E is a cross-sectional view of one embodiment of the tip of the finger member of the wafer support assembly, which is located in the fluid processing station of Figure 8A. Figure 8F is a cross-sectional view of another embodiment of the finger support member of the wafer support struts (S) 69 1343840, which is located in the fluid processing station of Figure 8A. Figure 9 is a vertical cross-sectional view of an upwardly facing electroless process chamber using nozzles on the fluid transfer arms within the process chamber. Figure 9A is a vertical cross-sectional view of the electroless process chamber of Figure 9 with the substrate support assembly in a raised position. Fig. 9B is a vertical sectional view showing another embodiment of the electroless process chamber of Fig. 9.

Figure 10 is a transverse cross-sectional view of the electroless process chamber of Figure 9. Figure 11 is a vertical cross-sectional view of another embodiment of an electroless process chamber. Figure 11A is a cross-sectional view of the electroless process chamber of Figure 11 with a flow diverter disposed within the process chamber. Figure 11B is a vertical cross-sectional view of the other embodiment of the electroless process chamber of Figure 11A with the airflow diverter in a raised position. Figure 12 is a vertical cross-sectional view of another embodiment of an electroless process chamber in which the process chamber upper cover member is movable.

Sections 1 3 and 14 respectively illustrate cross-sectional views of an embodiment of a process fluid delivery system that includes nozzles of both embodiments and is connectable to the electroless process chamber. [Main component symbol description] 1 Side bank 1 A Inner wall 1C Extension 2 Lifting unit 3 Fluid source 4 Bowl assembly 4A Opening 4B Entrance 70 1343840

4C bottom 4D side wall top 4E outer wall 5 gap 6 vent 7 raft 8 collection area 9 collection member 9A opening 10 side wall II porous plate IIA hole 12 bolt assembly 13 shaft 1 3A interface 1 4 seal assembly 15 vacuum source 16 sealed Pad 1 6A O-ring 1 6B Elasticity every month 1 6C Upper surface 1 6D Back 1 6E Contact point 1 6F Area 17 Channel 18 Finger 19, 20 Motor 2 1 Exhaust 22 Drainage 23 Discharge system 24 Discharge port 25 Fluid Space 26 Distribution port 27 Base 28 Treatment interval 29 Area 30 Linear cleaning 3 1 Leading spiral 32 > 33 Clearance 34 Section 41, 42 Heater 43 Heating element 50 Lifting assembly 100 System 102, 104, 106, 108, 110, 112 , 114, 116 Process chamber position 10 5 Inspection station 1 1 1 Controller

(S 71 1343840

113 Main platform 115 Connecting channel 120, 132 Robot arm 122, 124 Blade 126 Substrate 130 Working interface 134 Loading station 135 Annealing chamber 136 Cooling plate 137 Heating plate 140 Robot arm 150 Track 302 Enclosed area 303 \ All head 304 Inlet 305 Transfer device 308 central inner wall 3 10 groove or slit 3 12, 3 13 process space 3 14 vent 3 15 environmental control assembly 400 deposition station 401 substrate 402, 404 station 403 platform assembly 405 diffusion member 405 A upstream or lower surface 406 408 Dispensing arm 407 Flow hole 409 Supply tube 409A Heater 409B Fluid source 410 Fluid space 4 11 Ring structure 412 Finger member 413 Lifting assembly 414 Support assembly 4 15 Vertical rod 415A Support surface 416 Bezel 417 Base member 417A Inner surface 418 '419 shackle 420a, 420b discharge 421a ' 421b end 422 partition member 423, 424 partition 425 upper member 72 1343840

1079 Lifting assembly 1080 Motor 1 0805 Actuator 1102 Steering 1 108 Slit 1112 Adding coil 1121 Seal 1161, 11 64 Heater 1162 Filter 1166 Line 1170 Degassing unit 1200 Introducing system 1 202, 1204 1026 Solution source 1203 Fluid source 1207 Gas source 1208 Pump 1209 Distribution valve 1210 Line 12 12 Tank 1214 Exhaust α 1216 (Fluid): Outlet 12 18 (Fluid) Into σ 1225 Inlet tube 1227 Outlet line 1240 Discharge system 1244 (Gas) Supply 1246 Exhaust gas into σ 1248 exhaust system 1249 discharge device 1250 substrate 1299 support assembly 1300 finger member 1301 support 1302 diffusion member 1304 base member 1305 base conduit 1306 flow channel 1308 into α 1310 fluid space 13 12 heat transfer 1360 photography device 1402 Nozzle 1404 Motor 1406 Transport arm 1410 Guard member 1420 · .1422 Channel 1424 Tip 1426 Body 74 1343840 Α Second temperature control fluid B Temperature fluid Di, D〗, D3, D4 diameter L, the distance X on the surface of the substrate Wi length L1 of the substrate W (treated surface) of the substrate back surface Η W2 1, Η 2 Depth

75

Claims (1)

1343840 The first year of the No. L special ill case diik » ·· . ·· ·> m λ X. Patent application scope: 1. An electroless process chamber 'having a treatment area for processing one substrate' The method includes: a platform assembly 'located in the processing area, the platform assembly includes a base member having a flow through hole formed therein: a fluid diffusion member densely disposed on the base member and having an upstream side and a downstream a side, wherein the fluid diffusion member has a plurality of flow channels 'fluid communication between the upstream side and the downstream side; - a fluid space formed in the base member and the diffusion Between the upstream sides of the member; - a feature 'projecting a first distance above the downstream side of the fluid diffusion member; and - a rotatable substrate support assembly 'located in the processing region and having - a substrate A support surface, the rotatable base member pivot member is attached to the platform assembly and adapted to rotate relative to the platform assembly. The electroless process chamber, wherein the fluid and one surface of the feature conforms to the disk. 2. The diffusion member is substantially disk-shaped, one of the outer edges of the fluid diffusion member. 3. The electroless process chamber of claim 1, wherein the distance is from about 0.5 mm to about 25 mm. S: 76 1343840 4. The electroless process chamber of claim 1, wherein the downstream crucible of the fluid diffusion member has a surface roughness (Ra) of from about 1.6 microns to about 20 microns. 5. An electroless process chamber having a processing area suitable for processing a substrate, including - a platform assembly, located in the processing area, the platform assembly comprising: a base member having a flow through hole formed therein; a fluid diffusion member densely disposed on the base member and having an upstream side and a downstream side; a fluid space formed between the base member and the upstream side of the fluid diffusion member; a plurality of flow passages formed in the fluid diffusion member, wherein the plurality of flow passages are in fluid communication between the upstream side and the downstream side of the fluid diffusion member, and at least one of the plurality of flow passages is further The method includes: a first characteristic structure in fluid communication with the upstream side and having a first loading area; and a second characteristic structure having a second wearing area, wherein the first characteristic structure and the second characteristic structure Fluidly connected to each other; and a rotatable substrate support assembly located in the processing region and having a 77 1343840 12. A substrate support surface, wherein the rotatable substrate support assembly is coupled to the assembly and adapted to rotate relative to the platform assembly. 6. The electroless process chamber of claim 5, wherein the cross-sectional area is greater than the first cross-sectional area. 7. The electroless process chamber according to claim 5, wherein the one flow channel comprises: an array consisting of at least four flow paths, which is a substantially evenly distributed swim side; and an annular feature structure protruding from the downstream side The first one above the first distance is from about 0.5 mm to about 25 mm. 8. The electroless process chamber of claim 5, wherein the one of the flow channels comprises an array of a plurality of flow channels arranged in a square, radial, or hexagonal close orientation. 9. The electroless process chamber of claim 5, wherein at least two or more of the flow channels further comprise a first cylindrical structure extending from the upstream side, and the first cylindrical structure is The fluid is a second cylindrical structure, wherein a portion of the second cylindrical structure is intercepted by the first cylindrical structure. The second plurality of the platform is at the lower distance, and the plurality of rectangular and packed channels are connected to each other with a large area. 78. 1343840 曰修(more) replacement page 10. An electroless process chamber suitable for processing a substrate comprising: a rotatable substrate support assembly located in a processing region of the electroless process chamber and having one or more Substrate support surface; a bank, located in the processing region and having a first surface, wherein the substrate and/or a substrate on the one or more substrate supporting surfaces are positionable, and the first surface of the bank is A gap is formed between an edge of the substrate; and a fluid source is positioned to transport an electroless treatment solution to a surface of a substrate on the substrate support assembly. 11. The electroless process chamber of claim 10, wherein the fluid source further comprises a fluid heater in thermal communication with the electroless treatment solution delivered by the fluid source. 12. The electroless process chamber of claim 10, wherein the side bank further comprises a lifting assembly adapted to be adapted to one of the substrates relative to the one or more substrate support surfaces. The surface is used to position the side bank. 13. An electroless process chamber adapted to process a substrate, comprising: a rotatable substrate support assembly disposed in a processing region of the electroless process chamber, wherein the rotatable substrate support assembly has one or more a substrate supporting feature structure, and each feature structure has a substrate supporting surface; 79 1343840 a day-repair (more) riding a bowl-shaped component, located in the processing area, and having one or more inner walls to form a a fluid space, wherein the fluid space is fabricated in a size that immerses the one or more substrate support features in a fluid within the fluid space; and a fluid source, the fluid space, and the one Or a substrate on a plurality of substrate support surfaces is in fluid communication. 14. The electroless process chamber of claim 13, wherein the electroless process chamber further comprises a fluid heater in thermal communication with the fluid located in the fluid space. 15. The electroless process chamber of claim 13, wherein the electroless process chamber further comprises a lifting assembly adapted to position the one or more inner walls relative to the bowl assembly Rotating substrate support assembly. 16. The electroless process chamber of claim 13, wherein the rotatable substrate support assembly further comprises: a plenum in fluid communication with the substrate support surface; and a vacuum source And being in fluid communication with the inflating portion and a substrate disposed on the substrate supporting surface. 80 1343840 挚 曰 曰 曰 更 更 更 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. 17. The material support assembly has one or more spaced apart substrate support features, and each feature structure has a substrate support surface; a bowl-shaped assembly, located in the processing region, and having one or more inner walls to form a fluid space, wherein the fluid space is immersed in the fluid space in accordance with the one or more spaced apart substrate support features a motor in a size; a motor adapted to rotate the one or more spaced apart substrate support features; a gap formed in the one or more spaced apart substrate support features a surface of one of the substrates and a surface of the one or more inner walls of the bowl assembly; and a fluid source associated with the fluid space and the substrate disposed on the one or more substrate support surfaces The surface is connected to the flow. 18. An electroless process chamber adapted to process a substrate, comprising: a platform assembly located in a processing region, the platform assembly comprising: a fluid diffusion member having an upstream side, a downstream side, and adapted to provide the a plurality of flow passages in fluid communication between the upstream weir and the downstream side; a first base member having a first flow passage therethrough formed therein, wherein the first base member is densely disposed in the fluid diffusion structure 81 1343840 and at least one of the plurality of flow passages formed in the fluid diffusion member is in fluid communication: and a base member having a second flow through therethrough The second base member is densely disposed in the flow diffusion member, and the second flow hole is in fluid communication with at least one of the plurality of flow channels formed in the fluid diffusion member: and - rotatable A substrate support assembly is disposed in the processing region and has a substrate support surface, wherein the rotatable substrate support assembly is coupled to the platform assembly and adapted to rotate relative to the platform assembly. 19. A method of processing a substrate in an electroless process chamber, comprising: positioning a substrate on a substrate receiving surface on a substrate support: positioning the substrate support with a diffusion member a distance from the plurality of flow channels in the diffusion member, the temperature control fluid is brought into contact with a first surface of the substrate; and the substrate is supported against the substrate by the diffusion member And dispensing an electroless deposition treatment fluid to a second surface of the substrate to deposit an electroless layer on the second surface. 20. The method of claim 19, wherein the step of dispensing an electroless plating treatment fluid further comprises: flowing an electroless plating treatment fluid from a source; and configuring a nozzle by using a movable arm assembly. The 822134340 of the substrate is repaired (more) over the surface of the page 2; and the electroless plating treatment fluid is dispensed from the nozzle onto the substrate. 21. The method of claim 19, further comprising removing the gas in the electroless plating treatment fluid prior to dispensing the electroless plating treatment fluid to the second surface of the substrate. 22. A method of processing a substrate in an electroless process chamber having a processing region, comprising: positioning a substrate to a substrate receiving surface held on a substrate support in the processing region; Positioning the substrate receiving surface at a distance from a diffusion member held in the processing region; rotating the substrate and the substrate support relative to the diffusion member; flowing a gas from a process gas source to The processing area; 1 flowing a fluid through a plurality of flow channels formed in the diffusion member; positioning the substrate receiving surface at a distance from the diffusion member such that a first surface of the substrate contacts the fluid; and dispensing a The first no-charge bond processes the fluid to a second surface of the substrate. 83 s 1343840 12. 〇 ι Figure 4 c