TWI355298B - Apparatus for electroless deposition of metals ont - Google Patents

Apparatus for electroless deposition of metals ont Download PDF

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Publication number
TWI355298B
TWI355298B TW94102363A TW94102363A TWI355298B TW I355298 B TWI355298 B TW I355298B TW 94102363 A TW94102363 A TW 94102363A TW 94102363 A TW94102363 A TW 94102363A TW I355298 B TWI355298 B TW I355298B
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Taiwan
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fluid
processing
substrate
deposition system
volume
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TW94102363A
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Chinese (zh)
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TW200533424A (en
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Dmitry Lubomirsky
Arulkumar Shanmugasundram
Russell Ellwanger
Ian A Pancham
Ramakrishna Cheboli
Timothy Weidman
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Applied Materials Inc
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Priority claimed from US10/996,342 external-priority patent/US7323058B2/en
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Publication of TWI355298B publication Critical patent/TWI355298B/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

13552981355298

玖、本發明說明: 【發明所屬之技術領域】 本發明之具體實施例廣義上有關用於半導體處理之無 電沉積系統。 【先前技術】 次100奈米規模特徵之金屬化是用於現今與未來.世代 積體電路製程的基礎技術。尤其更是在譬如超大型積體元 件(即具有包含百萬個邏輯閘之積體電路元件)中,置於此 等元件核心部位之多層互連線大體上係藉由以導電材料 (譬如銅)填充高深寬比(即大於約 2 5 : 1)互連線特徵而形 成。以此等尺寸,譬如化學氣相沉積與物理氣相沉積之習 知沉積技術係無法可靠地填充互連線特徵。因此,電鍍技 術(即,電化學電鍍與無電電鍍)便成為積體電路製程中無 空洞地填充次1 00奈米規模之高深寬比互連特徵的可行製 程。此外,電化學與無電電鍍製程亦已成為沉積後沉積層 (例如覆蓋層)之可行製程。 然而,有關無電電鍍製程之習知無電處理系統與方法 已面臨一些挑戰,譬如精確地控制沉積製程及在所產生之 沉積層上的缺陷比例。尤其是習知系統已面臨遇不良之基 材溫度控制,因為用在習知無電單元上之電阻加熱器及熱 泵不具有提供一橫跨基材表面之均勻溫度的能力,其對於 無電沉積製程的均勻性至關重要.。此外,習知無電系統未 能施行無電沉積室内部的環境控制,此在前不久已顯示對 3 1355298 缺陷比例具有實質上的衝擊β 同時,由於對環境及所有權費用(c〇〇)之關注,因此 需求藉由減少在基材的接收表面上得到足夠均勻之覆蓋率 所需之流動,以減少昂貴之無電電鍍處理化學品的浪費。 由於將無電處理溶液傳遞到基枒表面的速度及均勻性可影 響沉積製程結果,因此需要均旬地傳遞各種處理溶液之設 備及方法。當流體係接觸且流經基材及支撐基板構件時, 也需求藉由在基材背側上之傳導及對流的熱轉換控制基材 溫度。 再者’由於能以最少缺陷方式沉積均勻層的無電沉積 製程其功能性及有效整合平台尚未發展出。因此,業界對 於月b/儿積具有最少缺陷的均勻層之整合性無電沉積設備仍 有需求。 【發明内容】 本發明之具體實施例提供一無電沉積系統。該系統包 括一處理主框架,至少一定位在該主框架上之基材清潔 站,及一定位在該主框架上之無電沉積站。該無電沉積站 包括一環境控制處理包圍件(encl〇sure),一設置以清潔及 活化(activate)—基材表面的第一處理站,_設置以無電沉 積一層至該基材表面上之第二處理站,及一經定位以在該 第一及第一處理站間轉移基材之基材轉移穿棧器。該系統 也包括一位在該主框架上之基材轉移機械臂且係設置以 存取該處理包圍件的内部》 4 1355298 本發明的具體實施例也提供一無電沉積系統,其係設 置以有效地用最少缺陷在半導體基材上沉積導電層。該系 統包括定位在一處理主框架上的一無電沉積包圍件。該沉 積包圍件内部環境係具有壓力及溫度控制,且包括一第一 及第二基材處理站。該第一基材處理站係設置以清潔及活 化基材,而第二基材處理站係設置以無電沉積一層至該基 材上。一基材穿梭器件係定位在該包圍件中,且係設置以 在各自的站間傳輸基材。BRIEF DESCRIPTION OF THE DRAWINGS [Technical Fields of the Invention] Specific embodiments of the present invention are broadly related to an electroless deposition system for semiconductor processing. [Prior Art] The metallization of the sub-100 nm scale feature is the basic technology used in today's and future generations of integrated circuit processes. In particular, in the case of ultra-large integrated components (ie, integrated circuit components having millions of logic gates), the multilayer interconnections placed at the core of such components are generally made of a conductive material (such as copper). Filled with high aspect ratio (ie greater than about 2 5 : 1) interconnect features. With such dimensions, conventional deposition techniques such as chemical vapor deposition and physical vapor deposition are unable to reliably fill interconnect features. Therefore, electroplating techniques (i.e., electrochemical plating and electroless plating) have become a viable process for the in-circuit circuit process to fill the high aspect ratio interconnect features of the next 100 nm scale without voids. In addition, electrochemical and electroless plating processes have become a viable process for deposits (such as overlays) after deposition. However, conventional electroless processing systems and methods for electroless plating processes have encountered challenges such as precise control of the deposition process and the proportion of defects on the resulting deposited layer. In particular, conventional systems have been faced with poor substrate temperature control because resistive heaters and heat pumps used on conventional electroless units do not have the ability to provide a uniform temperature across the surface of the substrate for electroless deposition processes. Uniformity is essential. In addition, the conventional electroless system failed to implement environmental control inside the electroless deposition chamber, which has recently shown a substantial impact on the ratio of defects in 3 1355298. At the same time, due to concerns about the environment and the cost of ownership (c〇〇), There is therefore a need to reduce the waste of expensive electroless plating treatment chemicals by reducing the flow required to obtain a sufficiently uniform coverage on the receiving surface of the substrate. Since the speed and uniformity of transferring the electroless treatment solution to the surface of the substrate can affect the deposition process results, there is a need for an apparatus and method for uniformly transferring various treatment solutions. When the flow system contacts and flows through the substrate and supporting the substrate member, it is also desirable to control the temperature of the substrate by thermal conduction of conduction and convection on the back side of the substrate. Furthermore, the functional and efficient integration platform has not been developed due to the electroless deposition process capable of depositing a uniform layer with minimal defects. Therefore, there is still a need in the industry for an integrated electroless deposition apparatus having a uniform layer with minimal defects in the month b/child. SUMMARY OF THE INVENTION A specific embodiment of the present invention provides an electroless deposition system. The system includes a processing main frame, at least one substrate cleaning station positioned on the main frame, and an electroless deposition station positioned on the main frame. The electroless deposition station includes an environmental control processing enclosure, a first processing station disposed to clean and activate the surface of the substrate, and is disposed to electrolessly deposit a layer onto the surface of the substrate A processing station, and a substrate transfer handler positioned to transfer the substrate between the first and first processing stations. The system also includes a substrate transfer robot arm on the main frame and is configured to access the interior of the process enclosure. 4 1355298 Embodiments of the present invention also provide an electroless deposition system that is configured to be effective A conductive layer is deposited on the semiconductor substrate with minimal defects. The system includes an electroless deposition enclosure positioned on a processing main frame. The interior of the deposition enclosure has pressure and temperature control and includes a first and second substrate processing station. The first substrate processing station is configured to clean and activate the substrate, and the second substrate processing station is configured to electrolessly deposit a layer onto the substrate. A substrate shuttle device is positioned in the enclosure and is configured to transport the substrate between the respective stations.

本發明的具體實施例更提供一用於半導體處理之沉積 系統。該沉積系統的一具體實施例大體上包括一處理包圍 件,其界定具有環境控制的處理容積、一定位在該處理容 積内的第一流體處理單元、一定位在該處理容積内之第二 流體處理單元,及一定位在該處理容積内之基材穿梭器 件,且其係設置以枢轉地在該第一及第二流體處理單元間 轉移基材。該第一及第二流體處理單元大體上包括一流體 擴散構件、一基材支撐組件係設置以支撐與流體擴散構件 平行之基材、及一流體分配臂,其係可移動地定位以分配 處理流體至該基材上。 【實施方式】 第1圖示範一無電沉積系統1 0 0之具體實施例。該系 統100包括一工廠介面130,其包括複數個設置以與基材 容納卡匣產生介面之基材載入站 134。一工廠介面機械臂 132係定位在工廠介面130中,且係設置以存取且轉移基 ⑧ 5 1355298 材126進出位在載入站134上的卡匣。機械臂132也延伸 到一連接工廠介面130到處理主框架113的連結隧道115 中。機械臂132的位置允許存取載入站134,以自其擷取 基材’且接著傳送基材126至位於主框架113上的處理單 元位置114、116中之一’或者是退火站135。同樣地,機 械臂132可用以在基材處理程序完成後,自處理單元位置 114、116或退火站135擷取基材126。在此情況中,.機械 臂t I32可將基材126傳遞回到位在載入站134上的卡匣 中之一,用以自系統100移走》 工廠介面130也可包括一計量檢查站1〇5,其可用以 在系統100中處理前及/或後檢查基材。計量檢查站1〇5可 用以(例.如)分析沉積在基材上之材料的特徵(如,厚度、平 坦度、晶粒結構、佈局等)。可用在本發明具體實施例的範 例性計量學檢查站包括BX-30先進互連線測量系統 (Advanced Interconnect Measurement System)、及 CD-SEM 或DR-SEM檢查站’其專均可從美國加州Santa Clara之 Applied Materials公司獲得。一範例性計量學檢查站也揭 示於共同受讓之美國專利申請案序號第60/513,310號 (2 00 3年10月21曰)中’其標題為「具有整合性基材檢查 的電鍍系統(Plating System with lntegrated SubstrateA particular embodiment of the invention further provides a deposition system for semiconductor processing. A particular embodiment of the deposition system generally includes a process enclosure defining an environmentally controlled process volume, a first fluid processing unit positioned within the process volume, and a second fluid positioned within the process volume A processing unit, and a substrate shuttle device positioned within the processing volume, and configured to pivotally transfer the substrate between the first and second fluid processing units. The first and second fluid processing units generally include a fluid diffusion member, a substrate support assembly disposed to support a substrate parallel to the fluid diffusion member, and a fluid dispensing arm movably positioned for dispensing processing Fluid is applied to the substrate. [Embodiment] FIG. 1 illustrates a specific embodiment of an electroless deposition system 100. The system 100 includes a factory interface 130 that includes a plurality of substrate loading stations 134 that are configured to receive a cassette interface with a substrate. A factory interface robot arm 132 is positioned in the factory interface 130 and is configured to access and transfer the base 8 5 1355298 material 126 into and out of the cassette on the loading station 134. The robot arm 132 also extends into a joining tunnel 115 connecting the factory interface 130 to the processing main frame 113. The position of the robot arm 132 allows access to the loading station 134 to pick up the substrate ' from it and then transport the substrate 126 to one of the processing unit locations 114, 116 on the main frame 113' or to the annealing station 135. Similarly, the robotic arm 132 can be used to extract the substrate 126 from the processing unit locations 114, 116 or the annealing station 135 after the substrate processing procedure is completed. In this case, the robot arm t I32 can transfer the substrate 126 back to one of the cassettes located on the loading station 134 for removal from the system 100. The factory interface 130 can also include a metering station 1 〇5, which can be used to inspect the substrate before and/or after processing in system 100. The metrology station 1〇5 can be used to analyze, for example, the characteristics of the material deposited on the substrate (e.g., thickness, flatness, grain structure, layout, etc.). Exemplary metrology checkpoints that may be used in embodiments of the present invention include the BX-30 Advanced Interconnect Measurement System, and CD-SEM or DR-SEM checkpoints, which are exclusively available from Santa, California, USA. Acquired by Clara's Applied Materials. An exemplary metrology checkpoint is also disclosed in co-pending U.S. Patent Application Serial No. 60/513,310 (October 21, 2003), entitled "Electroplating System with Integrated Substrate Inspection ( Plating System with lntegrated Substrate

Inspection)」,其係在此藉由引用方式全數併入本發明。 退火站135大體上包括一二位置的退火站,其中一冷 卻板136及一加熱板137之位置係彼此相鄰,具有一位於 與其最靠近(例如二站間)之基材轉移機械臂14〇。基材轉 ⑧ 6 1355298This is incorporated herein by reference in its entirety. The annealing station 135 generally includes a two-position annealing station in which a cooling plate 136 and a heating plate 137 are positioned adjacent to each other with a substrate transfer robot 14 located closest to (e.g., between two stations). . Substrate transfer 8 6 1355298

移機械臂140大體上係設置以在加熱板137及冷卻板l36 間移動該基材。系统1〇0<包括複數個退火站135’其中 該等站135可依堆疊之组態。此外,雖然所顯示之退火站 135的位置使得其係自速緒随道115存取’本發明的真艘 實施例不受限於退火站1 35的任何特定組態或放置方式° 因此,退火站135可定位在與主框架113直接連通,即由 主框架機械臂120存取’或另一選擇是退火站135定位在 與主框架113連通(即,退火站可與主框架Η]位_在相同系 統上),但可能不與主框架113直接接觸’或可自該主框朱 機械臂120存取。例如,如第1圖中所示,退火站135< 定位在直接與連結隧道115連通,其允許經由機械臂I32 及/或120存取到主框架113。退火站135的額外描述及其 操作可在20 04年4月13日共同讓渡予本案申請人的美國 專利申請案序號第10/823,849號中發現,其標題為「二位 置退火室(Two Position Anneal Chamber)」,其係在此以引 用方式全數併入本發明。The shifting arm 140 is generally disposed to move the substrate between the heating plate 137 and the cooling plate l36. The system 1 〇 0 includes a plurality of annealing stations 135' wherein the stations 135 are configurable according to the stack. In addition, although the location of the annealing station 135 is shown such that it is accessed from the quick track 115, the embodiment of the present invention is not limited to any particular configuration or placement of the annealing station 1 35. The station 135 can be positioned in direct communication with the main frame 113, i.e., accessed by the main frame robot arm 120. Alternatively, the annealing station 135 can be positioned in communication with the main frame 113 (i.e., the annealing station can be positioned with the main frame). On the same system, but may not be in direct contact with the main frame 113' or accessible from the main frame Zhu robot 120. For example, as shown in FIG. 1, the annealing station 135<> is positioned in direct communication with the joining tunnel 115, which allows access to the main frame 113 via the robotic arms I32 and/or 120. An additional description of the annealing station 135 and its operation can be found in U.S. Patent Application Serial No. 10/823,849, the entire disclosure of which is incorporated herein by reference. Anneal Chamber), which is hereby incorporated by reference in its entirety.

處理主框架113包括一中置的主框架基材轉移機械臂 12〇°主框架機械臂120大體上包括一或多個葉片122、 124’其等係設置以支撐及轉移基材。此外,主框架機械臂 12〇及伴隨之葉片122、124大體上係設置以獨立伸展、轉 動、框轉及垂直地移動,使得該主框架機械臂120可同時 送入及將基材移動至/自複數個位在主框架113上之處理 單元位置 102、104、106、108、110、112、114、116。同 樣地’工廠介面機械臂132也包括旋轉、伸展、樞轉及垂 ⑧ 7 1355298 直移動其基材支棺接 得葉片之能力,同時也允許沿著自工廠介 面1 3 0延伸至丨| φ 4 框架U3之機械臂轨道150線性地行進。 體上處理單元位置1〇2、104' 1〇6、108、110、 ‘ 112' H4> 116 了為用在一基材處理系統中的任何數量之 處單-尤其疋該等處理單元或位置可經設置為電化學 電鍍早70、沖洗單元、斜邊清潔單元、旋轉沖洗乾燥單元、 . 基材表面β潔單元(其總括清潔、沖洗及蝕刻單元)、無電 • t錄單7L (其包括前及後清潔單元 '活化單元沉積單元 等)、計量檢查站,及/或其他可有助於與一沉積處理系統 及/或平臺結合使用之處理單元。 各個別的處理單元位置102、104、106' 108、110、 112、114、116及機械臂132、12〇大體上係與一製程控制 器111連通’其可為一設置以從使用者及/或定位在系統 100上的各種感應器接收輸入的以微處理器為基礎之控制 系統’並且依據輸入及/或預定處理製程適當地控制系統 100的操作。此外,該等處理單元位置102、104、106、108、 • U〇、112、114、116也連通一流體傳遞系統(未顯示出), 其係設置以在處理期間供應必要之處理流體至各自的處理 - 單元位置,此大體上也在系統控制器111的控制下。一範 例性處理流體傳遞系統可在2003年5月14日之共同受讓 美國專利申請案第1 0/43 8,624號,標題為:「多重化學作 用之電化學處理系統(Multi-Chemistry Electrochemical Processing System)」中發現,其係在此以引用方式全數併 入本發明。 1355298The processing main frame 113 includes a center-mounted main frame substrate transfer robot. The main frame robot 120 generally includes one or more blades 122, 124' that are arranged to support and transfer the substrate. In addition, the main frame robot arm 12 and the accompanying blades 122, 124 are generally arranged to independently extend, rotate, frame and move vertically so that the main frame robot 120 can simultaneously feed and move the substrate to / Processing unit locations 102, 104, 106, 108, 110, 112, 114, 116 are located on the main frame 113. Similarly, the 'factory interface arm 132 also includes the ability to rotate, extend, pivot, and hang the blades of the substrate to directly move the blades, while also allowing to extend along the factory interface 130 to 丨| φ 4 The robot arm track 150 of the frame U3 travels linearly. The on-body processing unit positions 1〇2, 104' 1〇6, 108, 110, '112' H4> 116 are used for any number of locations in a substrate processing system - especially for such processing units or locations Can be set to electrochemical plating 70, flushing unit, bevel cleaning unit, rotary washing and drying unit, substrate surface β cleaning unit (its collective cleaning, rinsing and etching unit), no electricity • t record 7L (including Front and rear cleaning units 'activated unit deposition units, etc., metering stations, and/or other processing units that may be used in conjunction with a deposition processing system and/or platform. Each of the individual processing unit locations 102, 104, 106' 108, 110, 112, 114, 116 and the robotic arms 132, 12A are generally in communication with a process controller 111, which may be a setting for the user and/or The various sensors positioned on system 100 receive the input microprocessor-based control system' and appropriately control the operation of system 100 in accordance with input and/or predetermined processing procedures. In addition, the processing unit locations 102, 104, 106, 108, • U〇, 112, 114, 116 are also coupled to a fluid transfer system (not shown) that is configured to supply the necessary processing fluid to each during processing. Processing - unit location, which is also generally under the control of system controller 111. An exemplary treatment fluid delivery system is disclosed in commonly-assigned U.S. Patent Application Serial No. 10/43, 624, entitled "Multi-Chemistry Electrochemical Processing System", May 14, 2003. It is found that it is hereby incorporated by reference in its entirety in its entirety. 1355298

在範例性無電沉積系統100中(如第1圖中所示),該 等處理單元位置 102、104、106、108、110、112、114、 116可設置如下。處理單元位置114及116可被設置為一 在·主框架113上之溼式處理站及在連結隧道115中之大體 上乾式處理站或區域、退火站135、及工廠介面130間的 介面°定位在該介面之處理單元位置U4、116可例如為旋 轉’冲洗乾燥單元及/或基材清潔單元。各處理單元位置Π4 及11 6可包括在堆疊組態中的一旋轉沖洗乾燥單元及一基 材’清潔單元。或者是,處理單元位置114可包括一旋轉沖 洗乾燥單元,而單元位置116可包括一基材清潔單元。在 又另—具體賁施例中,各單元位置114、116可包括一旋轉 ’冲洗乾燥單元及基材清潔單元的組合。可用於本發明具體 實施例之範例性旋轉沖洗乾燥單元的詳細描述可在2003 年10月6曰之共同受讓美國專利申請案第1〇/680,616號 中發現’其標題為:「旋轉沖洗乾燥單元(Spin Rinse Dry Cel1)」,其係在此以引用方式全數併入本發明。In an exemplary electroless deposition system 100 (as shown in Figure 1), the processing unit locations 102, 104, 106, 108, 110, 112, 114, 116 can be set as follows. The processing unit locations 114 and 116 can be configured as an interface between the wet processing station on the main frame 113 and the substantially dry processing station or region in the connection tunnel 115, the annealing station 135, and the factory interface 130. The processing unit locations U4, 116 at the interface may for example be a rotary 'rinse drying unit and/or a substrate cleaning unit. Each of the processing unit locations Π4 and 117 can include a rotary rinsing drying unit and a substrate' cleaning unit in a stacked configuration. Alternatively, processing unit location 114 can include a rotary wash drying unit and unit location 116 can include a substrate cleaning unit. In still other embodiments, each of the unit locations 114, 116 can include a combination of a rotary 'flush drying unit and a substrate cleaning unit. A detailed description of an exemplary rotary rinsing and drying unit that can be used in a specific embodiment of the present invention can be found in the commonly assigned U.S. Patent Application Serial No. 1/680,616, the entire disclosure of which is incorporated herein by reference. The unit (Spin Rinse Dry Cel1), which is hereby incorporated by reference in its entirety.

處理單元位置106、108可被設置為基材清潔單元,且 尤其是處理單元位置106、108可被設置為基材斜邊清潔單 元(即’其係設置以自周邊移走過量沉積,且視需要在沉積 製程已完成時自基材背侧移走)。範例性斜邊清潔單元係揭 示於2004年4月16曰之共同受讓美國專利申請案第 10/826,429號標題為:「整合式斜邊清潔室(integratedThe processing unit locations 106, 108 can be configured as a substrate cleaning unit, and in particular the processing unit locations 106, 108 can be configured as a substrate bevel cleaning unit (ie, 'the system is configured to remove excess deposition from the perimeter, and Need to be removed from the back side of the substrate when the deposition process has been completed). The exemplary beveled cleaning unit is disclosed in U.S. Patent Application Serial No. 10/826,429, entitled,,,,,,,,,,,,,

Bevel Clean Chamber)」中,其係在此以引用方式全數併入 本發明。本發明的具體實施例更預期到處理單元位置 9 1355298 106、108視需要可從系統100中省略。此外,處理單元位 置106、108可被設置為無電處理單元或單元對,以下將進 一步討論。The present invention is hereby incorporated by reference in its entirety. Particular embodiments of the present invention more contemplate that processing unit locations 9 1355298 106, 108 may be omitted from system 100 as needed. In addition, processing unit locations 106, 108 can be configured as an electroless processing unit or pair of units, as discussed further below.

處理單元位置102、104及110、112可被設置為無電 處理單元。可將無電處理單元102、104、110、112定位在 處理包圍件302中之主框架113上,其組態為二處理單元 可定位在各處理包圍件302中;即,處理單元110及112 可在第一處理包圍件 302中操作成為第一及第二處理單 元,而處理單元102及104可在第二處理包圍件3 02中操 作成為第三及第四處理單元。此外,如以上指出,本發明 的具體實施例涵蓋處理單元位置106與108可具有一定位 於處理單元位置106、108上之處理包圍件302,且此等處 理單元位置106' 108視需要可被設置以與處理單元位置 102、104、110、112類似之方式操作。The processing unit locations 102, 104 and 110, 112 can be configured as an electroless processing unit. The electroless processing unit 102, 104, 110, 112 can be positioned on the main frame 113 in the processing enclosure 302, which is configured such that the two processing units can be positioned in each processing enclosure 302; that is, the processing units 110 and 112 can Operation in the first processing enclosure 302 becomes the first and second processing units, and the processing units 102 and 104 can operate as the third and fourth processing units in the second processing enclosure 032. Moreover, as indicated above, embodiments of the present invention contemplate that processing unit locations 106 and 108 may have processing enclosures 302 located at processing unit locations 106, 108, and such processing unit locations 106' 108 may be set as desired It operates in a similar manner to processing unit locations 102, 104, 110, 112.

定位在處理包圍件302中的無電處理單元可包括電鍍 或電鍍支撐單元,例如電化學電鍍單元、無電電鍍單元、 無電活化單元、及/或基材沖洗或清潔單元。在範例性無電 處理系統1 00中,在平台1 00上各對單元中的一流體處理 單元將是活化單元,且該對中的其他處理單元將是無電沉 積單元。此組態大體上將會被複製在相對之處理包圍件 3 0 2中平台10 0的相對側上。例如,雖然本發明不限於任 何特定組態,但是處理單元位置1 02可被設置為一無電活 化單元,而處理單元位置104可被設置為一無電沉積單 元。同樣地,處理單元位置112可被設置為一無電活化單 ⑧ 10 1355298 元設置’而處理單元位置n〇可被設置為一無電沉積單 元。在各自的處理包圍件3 〇2中之該等處理單元在系統控 : 制器111的控制下大趑上係彼此獨立地操作。 • 第2圖是為求明顯而省略處理單元位置110、112之硬 體的範例性沉積系統透視圖。包圍件3〇2界定圍繞該對處 -理單兀位置110、112的一受控制之處理環境。處理包圍件 . 302可包括-中央内部壁308,其大體上平分該處理容積成 為大小相等的處理容積312、313。儘管中央内部壁308係 © 具選擇性’當其實行時’中央内部壁3〇8大體上在處理單 元位置11〇上產生一第—處理容積312,及在處理單元位 置112上產生一處理容積313。第—及第二處理容積312、 313實質上係藉由中央内部壁3〇8彼此隔離,然而,中央 内部壁308的下部包括一形成於其内之缺口或狹縫31〇。 缺口 310形成之尺寸是要容納一定位在處理單元位置 110、112間的基材轉移穿梭器3〇5。該基材轉移穿梭器3〇5 大體上係設置以在各自的處理單元間轉移基材 • (110 112),而無須使用主框架機械臂120。基材轉移穿 梭器305可為設置以繞一點樞轉之真空卡盤型基材支撐構 件’使彳于穿梭器305的一末梢基材支稽·端係在箭頭3〇3之 方向移動(顯示在第1圖中),以在該等各自的處理單元位 置110、112之間轉移基材。各個各自的處理容積312、313 也包括一具有閥的接口 304,其係設置以允許一機械臂(例 如主框架機械臂120)存取各自的處理容積312、313,以從 其送入及移走基材。 ⑧ 11 1355298The electroless processing unit positioned in the process enclosure 302 can include an electroplated or electroplated support unit, such as an electrochemical plating unit, an electroless plating unit, an electroless activation unit, and/or a substrate rinsing or cleaning unit. In the exemplary electroless processing system 100, one of the pairs of cells on the platform 100 will be an activation unit, and the other of the pair will be an electroless deposition unit. This configuration will generally be replicated on the opposite side of the platform 10 0 relative to the processing enclosure 3 0 2 . For example, although the invention is not limited to any particular configuration, the processing unit location 102 can be configured as a powerless activation unit and the processing unit location 104 can be configured as an electroless deposition unit. Similarly, the processing unit location 112 can be set to an electroless activation unit 8 10 1355298 element setting and the processing unit position n〇 can be set to an electroless deposition unit. The processing units in the respective processing enclosures 3 〇 2 operate independently of each other under the control of the system controller 111. • Figure 2 is a perspective view of an exemplary deposition system that omits the hardware of processing unit locations 110, 112 for clarity. The enclosure 3〇2 defines a controlled processing environment surrounding the pair of locations 110, 112. The process enclosures 302 can include a central inner wall 308 that substantially bisects the process volume into equal-sized process volumes 312, 313. Although the central inner wall 308 is selectively 'when it is implemented', the central inner wall 3〇8 generally produces a first processing volume 312 at the processing unit location 11〇 and a processing volume at the processing unit location 112. 313. The first and second processing volumes 312, 313 are substantially isolated from each other by a central inner wall 3'8, however, the lower portion of the central inner wall 308 includes a notch or slit 31a formed therein. The notch 310 is formed to accommodate a substrate transfer shuttle 3〇5 positioned between processing unit locations 110,112. The substrate transfer shuttles 3〇5 are generally arranged to transfer the substrate (110 112) between the respective processing units without the use of the main frame robot 120. The substrate transfer shuttle 305 may be a vacuum chuck type substrate supporting member that is disposed to pivot around a point to move a peripheral substrate supporting end of the shuttle 305 in the direction of the arrow 3〇3 (display In Fig. 1), the substrate is transferred between the respective processing unit positions 110, 112. Each respective processing volume 312, 313 also includes a valved interface 304 that is configured to allow a robotic arm (e.g., main frame robotic arm 120) to access respective processing volumes 312, 313 for feeding and moving therefrom Take the substrate. 8 11 1355298

各個該等各自的處理容積312'313也包括一位在各自 的包圍件312、313上部上的環境控制組件315(在第2圓 中為求明顯而從與處理包圍件之接觸移走)。環境控制组件 315包括一處理氣體來源,其係設置以對各自的處理容積 312、313提供處理氣體《處理氣體來源大體上係設置以將 惰性氣體(例如氤、氦、氫、氬及/或此等之混合物)或一般 用於半導體處理中的其他氣體的一已控制容積,提供.至各 自的處理容積312、313。環境控制組件315更包括一微粒 過濾系統,譬如HEPA型過濾系統。微粒過濾系統係用以 自進入處理容積312、313的氣流中移除微粒污染物。該微 粒過濾系統也用以產生大體上線性及均等的處理氣體,流 向下方的處理單元位置。環境控制組件315可更包括設置 以控制在該等各自的處理容積312、313中的溼度、溫度、 壓力等的元件。控制器111可用以連同處理系統1〇〇的其 他組件,調節環境控制組件及排放口 3 1 4的操作,以依據 處理製程或從定位在處理容積312、313中的感應器或偵測 器接收到的輸入,控制在處理容積312、313内之氧含量。 在操作中,處理氣體大體上係藉由環境控制組件315 提供至處理容積312、313。將處理氣體引入各自的處理容 積312、313之操作,係以一惰性氣體填充被包圍之處理環 境的内部,因此清除處理容積312、313内部例如可能使無 電電鍍製程惡化的氣體,譬如氧氣。大體上,處理氣源將 處理氣體引入處理容積312、313中,靠近處理單元位置 110、112上的處理容積312、313之頂部或上部,且靠近Each of these respective processing volumes 312' 313 also includes an environmental control assembly 315 on the upper portion of the respective enclosure 312, 313 (which is removed from contact with the processing enclosure for clarity in the second circle). The environmental control component 315 includes a source of process gas disposed to provide a process gas to the respective process volumes 312, 313. The process gas source is generally configured to contain an inert gas (eg, helium, neon, hydrogen, argon, and/or A controlled volume) or a controlled volume of other gases typically used in semiconductor processing is provided to respective processing volumes 312, 313. The environmental control component 315 further includes a particulate filtration system, such as a HEPA type filtration system. The particulate filtration system is used to remove particulate contaminants from the gas stream entering the processing volumes 312, 313. The microfiltration system is also used to produce a substantially linear and uniform process gas that flows to the processing unit location below. The environmental control component 315 can further include elements configured to control humidity, temperature, pressure, etc., in the respective processing volumes 312, 313. The controller 111 can be used in conjunction with other components of the processing system 1 to adjust the operation of the environmental control assembly and the vent 31 to receive or receive from sensors or detectors positioned in the processing volumes 312, 313. The incoming input controls the oxygen content in the processing volumes 312, 313. In operation, the process gas is generally provided to the process volumes 312, 313 by the environmental control component 315. The operation of introducing process gases into the respective process volumes 312, 313 fills the interior of the enclosed process environment with an inert gas, thereby removing gases within the process volumes 312, 313, such as gases that may degrade the electroless plating process, such as oxygen. In general, the process gas source introduces process gases into the process volumes 312, 313 near the top or top of the process volumes 312, 313 on the process unit locations 110, 112, and is near

12 1355298 各自的處理容積312、313的中央。處理氣體大體上係透過 HEPA型過濾系統引入處理容積312、313,該HEPA型過 濾系統係設置以像空中微粒減到最少,且等化處理氣體之 流動速率及方向,使得氣體係線性地及流動,且以一連續 流動速率朝向處理單元位置110、112。12 1355298 The center of each of the processing volumes 312, 313. The process gas is generally introduced into the process volumes 312, 313 through a HEPA type filtration system that is configured to minimize airborne particulates and equalize the flow rate and direction of the process gas such that the gas system is linear and flowing. And toward the processing unit locations 110, 112 at a continuous flow rate.

各該等處理單元位置110、112也包括至少一排放口 314(或視需要多個徑向定位的接口 314),其位置有助.於處 理氣體之均勻流動,從在環境控制組件315中之氣體供應 器朝向處理單元位置110' 112。排放口 314可位於各自的 處理位置 110、112處之待處理基材下,或者是,排放口 314可從各自的處理位置110、112徑向朝外定位。不管如 何定位,排放口 3 1 4係設置以有助於處理氣體的均勻流 動,同時視需要可從各自的處理位置110、112排除流體及 化學蒸汽。Each of the processing unit locations 110, 112 also includes at least one vent 314 (or a plurality of radially positioned interfaces 314 as desired) in a position to facilitate uniform flow of process gas from the environmental control component 315 The gas supply is directed toward the processing unit location 110' 112. The vents 314 can be located under the substrates to be treated at respective processing locations 110, 112, or the vents 314 can be positioned radially outward from the respective processing locations 110, 112. Regardless of the positioning, the vents 3 1 4 are configured to facilitate uniform flow of the process gas while removing fluid and chemical vapor from the respective processing locations 110, 112 as needed.

一用於供應惰性氣體至處理容積312、313之典型製程 包括以介於約1 Oslm及約300slm間之流率供應惰性氣體, 或尤其是更介於約1 2slm及約80slm間。在當各自的處理 容積3 1 2、3 1 3關閉時(即,當具有閥的存取口 3 04關閉時), 可減少惰性氣體的流率。當具有閥的接口 3 04開啟時(即, 當基材正被轉移進出處理包圍件3 02時)會增加處理氣體 之流率,以產生從處理包圍件302的氣體之流出。此氣體 外流係設置以防止周圍氣體(且尤其是氧氣)進入處理包圍 件的内部。一旦具有閥的接口 3 04關閉,處理氣體流率可 減少到一適應基材處理的流率。在開始基材處理前,此流 ⑧ 13 1355298A typical process for supplying inert gas to the process volumes 312, 313 includes supplying an inert gas at a flow rate between about 1 Oslm and about 300 slm, or especially between about 12 sls and about 80 slm. When the respective processing volumes 3 1 2, 3 1 3 are closed (i.e., when the access port 304 with the valve is closed), the flow rate of the inert gas can be reduced. When the valve interface 408 is open (i.e., when the substrate is being transferred into and out of the process enclosure 022), the flow rate of the process gas is increased to produce an outflow of gas from the process enclosure 302. This gas outflow is arranged to prevent ambient gas (and especially oxygen) from entering the interior of the process enclosure. Once the valve interface 34 is closed, the process gas flow rate can be reduced to a flow rate that accommodates substrate processing. This flow is 8 13 1355298 before starting the substrate treatment

率可維持一段時間,使得在開始處理程序前,任何進入的 氧氣可從處理容積312、313移走。排放口 314與處理氣體 供應器協同運作以將氧氣從處理容積312、313移走。排放 口 314大體上是與一標準製造設施排放系統連通,且係用 以將處理氣體從處理容積312、313移走。在本發明的替代 性具體實施例中,處理容積312、313可包括一定位在與處 理容積312、313以流體連通的真空泵。該真空泵可用.以進 一步減少處理容積312、313中不需要氣體的出現。不管排 放或泵的組態如何,環境控制組件3 1 5大體上是設置以在 基材處理期間維持處理容積 312、313内部的氧含量在 500ppm以下,且更特別是在基材處理中低於1 OOppm。The rate can be maintained for a period of time such that any incoming oxygen can be removed from the processing volumes 312, 313 prior to beginning the processing procedure. The vent 314 operates in conjunction with the process gas supply to remove oxygen from the process volumes 312, 313. Discharge port 314 is generally in communication with a standard manufacturing facility exhaust system and is used to remove process gases from process volumes 312,313. In an alternative embodiment of the invention, the processing volumes 312, 313 can include a vacuum pump positioned in fluid communication with the processing volumes 312, 313. The vacuum pump can be used to further reduce the occurrence of unwanted gases in the process volumes 312, 313. Regardless of the discharge or configuration of the pump, the environmental control assembly 315 is generally configured to maintain the oxygen content inside the process volumes 312, 313 below 500 ppm during substrate processing, and more particularly below in substrate processing. 1 OOppm.

環境控制組件3 1 5、排放口 3 1 4及系統控制器1 1 1的 組合也允許系統 1 00在特定處理步驟期間控制處理容積 312、313的氧含量,其中一處理步驟可能需要第一氧含量 用於最佳結果,而一第二處理步驟可能需要一第二氧含量 用於最佳結果,其中第一及第二氧含量彼此不同。除氧含 量外,控制器111可被設置以視需要對於一特定處理程序 控制該處理包圍件的其他參數,譬如溫度、溼度、壓力等。 此等特定參數可藉由加熱器、冷卻器、濕潤器、除濕器、 真空泵、氣源、空氣過濾器、風扇等加以修改,所有此等 均包括在環境控制組件315中,且位置與處理容積312、 3 1 3以流體連通,並由系統控制器111控制》 處理容積312、313大體上經成形之尺寸有助於無電電 鍍處理,即處理容積312、313成形之尺寸使得環境控制組 ⑧ 14 1355298The combination of environmental control component 3 1 5, vent 3 1 4 and system controller 1 1 1 also allows system 100 to control the oxygen content of process volumes 312, 313 during a particular processing step, where a processing step may require a first oxygen The content is used for the best results, and a second processing step may require a second oxygen content for the best results, wherein the first and second oxygen contents are different from each other. In addition to the oxygen content, the controller 111 can be configured to control other parameters of the process enclosure, such as temperature, humidity, pressure, etc., for a particular process as needed. Such specific parameters may be modified by heaters, coolers, humidifiers, dehumidifiers, vacuum pumps, air sources, air filters, fans, etc., all of which are included in the environmental control assembly 315, and the location and processing volume 312, 3 1 3 are in fluid communication and are controlled by system controller 111. The substantially shaped dimensions of processing volumes 312, 313 facilitate electroless plating processing, i.e., the dimensions of processing volumes 312, 313 are shaped such that environmental control group 8 14 1355298

件 315之氣體供應可在處理步驟中維持低氧含量(大體上 小於約500ppm,或尤其是更小於約lOOppm),同時允許足 夠容積以支援該容積内流體溶液的蒸發,不會造成處理容 積312、313之蒸汽飽和。因此,自位於處理位置110、112 之一中的基材之上表面,到橫跨處理位置區域的處理容積 312、313頂部間之垂直距離(此容積大體上稱為頂部空 間),大體上係介於高約6英吋及約40英吋間,且具有處 理位置110、112的直徑或斷面。尤其是該頂部空間之高度 更可在約12英吋與36英吋間,且該處理容積312、313 的水平尺寸大體上接近各自的處理位置110、112之周界, 其尺寸大體上係比在各自的處理位置110、112中待處理的The gas supply of member 315 can maintain a low oxygen content (generally less than about 500 ppm, or especially less than about 100 ppm) during the processing step while allowing sufficient volume to support evaporation of the fluid solution within the volume without causing a treatment volume 312. The steam of 313 is saturated. Thus, the vertical distance from the top surface of the substrate in one of the processing locations 110, 112 to the top of the processing volumes 312, 313 across the processing location region (this volume is generally referred to as the headspace) is generally It is between about 6 inches high and about 40 inches high and has a diameter or section of the processing locations 110, 112. In particular, the height of the headspace may be between about 12 inches and 36 inches, and the horizontal dimensions of the processing volumes 312, 313 are substantially close to the perimeter of the respective processing locations 110, 112, which are substantially similar in size. To be processed in the respective processing locations 110, 112

基材直徑更大約1 〇%至約5 0%間。此等尺寸對於本發明設 備的操作很重要,因為已顯示出較小的處理容積傾向於使 蒸汽飽和,其在無電電鍍製程方面具有負面衝擊。因此, 本發明者確定足夠的頂部空間(在從基材到包圍件頂部的 距離上之處理位置的斷面)對於防止蒸汽飽和及與其相關 之缺陷係重要的。 有關大體上需要防止蒸汽飽和的頂部空間之容積,本 發明者頃發現對於一 300毫米處理位置而言,用於處理位 置110、112之頂部空間大體上是介於約1000立方英吋及 約5 0 0 0立方英吋間。因此,用於本發明處理容積3 1 2、3 1 3 的頂部空間當設置用於300毫米基材處理時,大體上將是 例如介於約1 5 0 0立方英吋及約5 0 0 0立方英吋間,或在約 2000立方英吋與4000立方英吋間,或介於約2000立方英 ⑧ 15 1355298 吋及3000立方英吋間。 雖然處理谷積312、313大趙上是彼此隔離,狹缝31〇 允許在一處理容積t之氣體通過進入鄰近之處理容積内。 因此’本發明的具體實施例在一處理容積中提供比鄰近處 理谷積更尚的壓力。此壓力差允許控制各自的處理容積 312、313間之串音’因為如果維持該座力差,處理容積間 的私流將在相同方向及相同速率。因此,處理單元中之The substrate diameter is more than about 1% to about 50%. These dimensions are important to the operation of the apparatus of the present invention because it has been shown that a smaller processing volume tends to saturate the vapor, which has a negative impact on the electroless plating process. Accordingly, the inventors have determined that a sufficient headspace (a section of the processing location at a distance from the substrate to the top of the enclosure) is important to prevent steam saturation and its associated defects. With regard to the volume of the headspace that is generally required to prevent steam saturation, the inventors have discovered that for a 300 mm processing position, the headspace for processing locations 110, 112 is generally between about 1000 cubic feet and about 5 0 0 0 cubic miles. Thus, the headspace for the treatment volume 3 1 2, 3 1 3 of the present invention, when disposed for 300 mm substrate processing, will generally be, for example, between about 1,500 cubic feet and about 5,000. Cubic miles, between about 2,000 cubic feet and 4,000 cubic feet, or between about 2,000 cubic inches, 8 15 1355298 吋 and 3,000 cubic feet. While the processing of the valleys 312, 313 Da Zhao is isolated from each other, the slit 31 〇 allows gas in a processing volume t to pass into the adjacent processing volume. Thus, embodiments of the present invention provide a greater pressure in a processing volume than the adjacent processing of the grain product. This pressure differential allows control of the crosstalk between the respective processing volumes 312, 313 because if the seating force difference is maintained, the private flow between the processing volumes will be in the same direction and at the same rate. Therefore, in the processing unit

可設置為冷處理單元(例如活化單元),而另—處理單元能 設置為加熱處理單元(例如無電沉積單元)。在此具體實施 例中’加熱處理單元係被加壓至較高壓力,且因此加熱流 艎處理早元總是透過狹縫310將氣體流入較冷的流體處理 單元内。此組態防止較冷的處理單元減低加熱處理單元的 溫度,因為加熱處理單元(即, 變化產生缺陷大體上係比冷卻的流體處理單元(即,該活化 單元)敏感。 在另一具體實施例中’各自的處理容積312、313可藉 由中央内部壁308彼此完全地隔離(即,基材穿梭器 及壁狹縫31〇被移走)。在此具體實施例中,主框架機械臂 i20可用於經由各自的存取間304維修或存取各個被隔離 之處理容積312、313,且可操作以在各白认老饱〜# %令自的處理容積312、 3 1 3間轉移基材。 第3圖是一包圍件302 透視圖。沉積站400大體上 單元的具體實施例。顯示在 從其移走的範例性沉積站4〇〇 代表第1及2圖中所示之處理 沉積站400中#處理單元可為 16 1355298It can be provided as a cold processing unit (e.g., an activation unit), and the other processing unit can be configured as a heat treatment unit (e.g., an electroless deposition unit). In this embodiment, the heat treatment unit is pressurized to a higher pressure, and thus the heat flow treatment early element always flows gas through the slit 310 into the cooler fluid treatment unit. This configuration prevents the colder processing unit from reducing the temperature of the heat treatment unit because the heat treatment unit (ie, the change produces a defect that is substantially more sensitive than the cooled fluid processing unit (ie, the activation unit). In another embodiment The respective process volumes 312, 313 can be completely isolated from each other by the central inner wall 308 (ie, the substrate shuttle and the wall slit 31 are removed). In this particular embodiment, the main frame robot arm i20 It can be used to repair or access each of the isolated process volumes 312, 313 via respective access rooms 304, and is operable to transfer the substrate between the respective processing volumes 312, 3 1 3 Figure 3 is a perspective view of a enclosure 302. A specific embodiment of the deposition station 400 is generally united. The exemplary deposition station 4 从 removed therefrom represents the processing deposition station shown in Figures 1 and 2. 400 processing unit can be 16 1355298

一無電活化站402及一無電沉積站404。基材轉移穿梭器 305係定位在站 402、404之間,且係設置以在各自的站 4〇2、4〇4間轉移基材。各站402、404包括一可轉動基材 支撐組件414,其係設置以支撐基材401依面朝上之方向 在各自的站中處理(即,基材的處理表面401係面朝離開支 撐组件414之方向)。在第3圖中,站402在顯示之基材支 撐组件414上不具有一基材401,而站404具有一基材401 被支撐在支撐組件414上,以顯示一各自在載入及空載狀 態中的站。大體上,各自的站402、404之硬體組態將相同, 然而,本發明的具韹實施例不限於站402、404具有相同硬 體於其中之組態。例如,本發明者預期到沉積站404可具 有一溫度控制平台403,在本文中會進一步說明,而活化 站4 02可被設置為不具有溫度控制平台403 »An electroless activation station 402 and an electroless deposition station 404. The substrate transfer shuttle 305 is positioned between the stations 402, 404 and is arranged to transfer the substrate between the respective stations 4, 2, 4, 4. Each station 402, 404 includes a rotatable substrate support assembly 414 that is configured to support the substrate 401 to be processed in a respective station in a face-up orientation (ie, the processing surface 401 of the substrate faces away from the support assembly) Direction of 414). In Figure 3, station 402 does not have a substrate 401 on the substrate support assembly 414 that is displayed, and station 404 has a substrate 401 supported on support assembly 414 to indicate that each is loaded and unloaded. The station in the state. In general, the hardware configuration of the respective stations 402, 404 will be the same, however, the embodiments of the present invention are not limited to configurations in which stations 402, 404 have the same hardware. For example, the inventors contemplate that deposition station 404 can have a temperature control platform 403, as further described herein, and activation station 422 can be configured without temperature control platform 403 »

也顯示在第4圖斷面圖中的基材支撑組件414包括一 支撐環結構411,其具有自其延伸之複數個垂直延伸基材 支撐指狀件412。基材支撐指狀件412大體上包括一上水 平表面,其係設置以支稽一基材401之邊緣或斜邊,大體 上如顯示在第3圖及第4圖之斷面圖中的處理位置404。 基材支樓指狀件412可更包括定位的一垂直柱件415,其 係定位以使在各自的指狀件4 1 2上之基材40 1被置於中 央。基材支樓組件414更包括一昇舉組件413,其係顯示 於第4圖且將參考該圖在此進一步說明,昇舉組件413係 設置以垂直地致動環411,且因此致動指狀件412,以從各 自的站402、404載入及卸載基材401。 17The substrate support assembly 414, also shown in the cross-sectional view of Figure 4, includes a support ring structure 411 having a plurality of vertically extending substrate support fingers 412 extending therefrom. The substrate support fingers 412 generally include an upper horizontal surface that is disposed to define the edges or beveled edges of the substrate 401, substantially as shown in the processing locations 404 of the cross-sectional views of Figures 3 and 4. . The substrate support fingers 412 can further include a vertical post 415 positioned to position the substrate 40 1 on the respective fingers 4 1 2 in the center. The substrate subassembly assembly 414 further includes a lift assembly 413, which is shown in FIG. 4 and further described herein with reference to the drawings, the lift assembly 413 is configured to actuate the ring 411 vertically, and thus actuate the finger The member 412 loads and unloads the substrate 401 from the respective stations 402, 404. 17

1355298 各自的站402、404各包括一流體分配 其等係設置以在處理期間在基材401上柩轉 流體到基材401的前侧或生產表面上《流趙 408也可設置以相對於基材垂直地定位,即 408的流體分配部分可定位在距離待處理之 約0.5毫米及約30毫米間,或尤其是更介於 15毫米間,或在約4毫米及約1 〇毫米間。 期間,分配臂406、408的流體分配部分的: 置視需要可加以調整。分配臂4 0 6、4 0 8在其 一流體導管,且因此,分配臂406、408可設 多種流體溶液到基材40 1上。 可由臂406或臂408分配的範例性溶液 液、清潔溶液、活化溶液、無電電鑛溶液、 電沉積製程所需的溶液。此外,在各自的臂 流體導管(未顯示出)可被加熱/冷卻,以控制 體的溫度。在該等臂導管中加熱/冷卻可提供 在行經該等導管而分配到基材前沒有時間冷 此可操作以改進無電沉積均勻性,該均勻 度。此外在本發明的具體實施例中,流體分 的終止端(即’處理流體被分配的位置)是可 因此,可調整臂406、408的流體分配部分與 間距。此間距可操作以使處理溶液的噴濺減 許控制在生產表面上之流體分配操作的定位 體的方法及設備的一具體實施例係揭示於下 臂 406 、 408 , ,以分配處理 :分配臂406、 ,分配臂406、 基材401表面 約5毫米及約 在處理一.基材 垂直及/或角位 中可包括多於 置以自其分配 包括,沖洗溶 及其他支援無 406' 408 中之 自其分配之流 優勢,即流體 卻。此組態因 性係取決於溫 配臂 406、408 移動地定位。 基材表面間的 到最少,且允 。用於分配流 ⑧ 18 第4圖是一對範例性處理站402、404的斷面。‘ 面 第4 圏的斷面圖也顯示界定由中央内部壁308區分之坌 _ <弟一及第 二處理容積312、313的包圍件3〇2,如以上參 亏第2囫之 描述。各處理站402、404包括一基材處理平台紐从 .叙 。飯件403, 丹^成一實質上水平上表面,係設置以在處 «3間位於_ 基材正下方。平台組件4〇3(也顯示在第5圓的 、 中、軟斷面圖 )整體包括一定位在基板構件417上方的流 m 散構伴 〇5,因此流體擴散構件405及基板構件417在其笑„ —奴體容積410〇 —流體供應導管409係與流體容積41〇 机體連通’且一流體流動擋板4〗6係裝附至基板構件 17且係定位在供應導管409的終止端及流體擴散構件 405的下表面間之流體容積41〇中。 凉體擴散構件405包括複數個形成其間的流動孔 其等連接流體擴散構件405的上表面到流體擴散構件 405的下表面。流體擴散構件4〇5的一周邊部分大體上是 與基板構件417具密封的連通,且因此流體可藉由流體供 應導官409引入流體容積41〇中,且因為藉由流體引入密 封流體容積410中所產生之流體壓力增加,造成流經形成 在擴散構件405中之孔4〇7。 流體擴散構件405可包括約1〇到約200間之流動孔 407,該等孔之直徑大體上在約0.5毫米及約15毫米之間, 或直徑尤其是介於約0.7毫米及約3毫米之間。該等孔4〇7 可垂直或交替地定位在相對於擴散構件4〇5上表面呈一角 度處。該等孔407可定位在與垂直呈約5度及約45度之 1355298 間,以有助於撗跨擴散構件4〇5的表面的一向外流體流動 模式。此外,有角度之孔407可設置以減少流體紊流。1355298 The respective stations 402, 404 each include a fluid distribution arrangement thereon to transfer fluid on the substrate 401 to the front side or production surface of the substrate 401 during processing. "Flower 408 can also be positioned relative to the base. The material is vertically positioned, i.e., the fluid dispensing portion of 408 can be positioned between about 0.5 mm and about 30 mm, or especially between 15 mm, or between about 4 mm and about 1 mm. During this time, the fluid dispensing portions of the dispensing arms 406, 408 can be adjusted as needed. The dispensing arms 4 0 6 , 4 0 8 are in one of the fluid conduits, and thus, the dispensing arms 406, 408 can be provided with a plurality of fluid solutions onto the substrate 40 1 . An exemplary solution, cleaning solution, activation solution, electroless ore solution, solution required for electrodeposition process may be dispensed by arm 406 or arm 408. In addition, the respective arm fluid conduits (not shown) can be heated/cooled to control the temperature of the body. Heating/cooling in the arm conduits provides for no time to cool before dispensing through the conduits to the substrate. This is operable to improve electroless deposition uniformity, which is uniform. Moreover, in a particular embodiment of the invention, the terminating end of the fluid component (i.e., the location at which the processing fluid is dispensed) is such that the fluid dispensing portion and spacing of the arms 406, 408 can be adjusted. A specific embodiment of the method and apparatus for arranging the spacing of the processing solution to reduce the priming of the fluid dispensing operation on the production surface is disclosed to the lower arms 406, 408 for dispensing processing: dispensing arms 406, the dispensing arm 406, the surface of the substrate 401 is about 5 mm and is about to be processed. The vertical and/or angular position of the substrate may include more than being disposed therefrom, including rinsing and other support without 406' 408. The advantage of the flow from its distribution, that is, the fluid. This configuration factor depends on the positioning of the warm arms 406, 408. The minimum between the surfaces of the substrate is acceptable. For distributing streams 8 18 Figure 4 is a cross section of a pair of exemplary processing stations 402,404. The cross-section of the fourth section also shows the enclosure 3 〇 2 defining the 坌 _ < the first and second processing volumes 312, 313 distinguished by the central inner wall 308, as described above. Each processing station 402, 404 includes a substrate processing platform. The rice cooker 403, Dan ^ a substantially horizontal upper surface, is set to be located at the "3" located directly below the substrate. The platform assembly 4〇3 (also shown in the fifth, middle, and soft cross-sectional views) integrally includes a flow m-dispersing struts 5 positioned above the substrate member 417, such that the fluid diffusion member 405 and the substrate member 417 are Laughing „—slave volume 410〇—the fluid supply conduit 409 is in fluid communication with the fluid volume 41〇” and a fluid flow baffle 4 is attached to the substrate member 17 and positioned at the terminating end of the supply conduit 409 and The fluid volume 41 〇 between the lower surfaces of the fluid diffusion member 405. The cooling body diffusion member 405 includes a plurality of flow holes formed therebetween, which connect the upper surface of the fluid diffusion member 405 to the lower surface of the fluid diffusion member 405. The fluid diffusion member A peripheral portion of the 4〇5 is generally in sealing communication with the substrate member 417, and thus fluid can be introduced into the fluid volume 41〇 by the fluid supply guide 409 and because it is introduced into the sealed fluid volume 410 by the fluid. The fluid pressure is increased to cause flow through the holes 4〇7 formed in the diffusion member 405. The fluid diffusion member 405 may include flow holes 407 of between about 1 Torr and about 200, the diameters of the holes being substantially at about 0.5 The meter is between about 15 mm, or in particular between about 0.7 mm and about 3 mm in diameter. The holes 4〇7 can be positioned vertically or alternately at an angle relative to the upper surface of the diffusing member 4〇5. The apertures 407 can be positioned between about 5 degrees and about 1355 of the vertical direction to help the outer fluid flow pattern of the surface of the diffusion member 4〇5. In addition, the angled aperture 407 can Set to reduce fluid turbulence.

在本發明的另一具體實施例中,流體擴散構件405可 至少包含—多孔材料(譬如多孔陶瓷),例如係設置以允許 流體通過其流動。在此具體實施例中,該等孔4〇7大體上 不需要,然而,本發明者已預期實施將一些孔4〇7結合多 孔流體擴散構件405以增加必要的流動。陶瓷材料也較具 優勢’因為其等係本質上地親水性且實質上可較堅硬。在 一態樣中’擴散構件405可經設計具有尺寸從約〇.丨微米 到約500微米的孔。因為通過擴散構件405的流體流動阻 力是擴散構件405厚度的函數,此特徵可加以變化或改變 以依需要提供符合需求的流體流動特徵。 在本發明另一具體實施例中,基板417可具有複數個 形成其間的流體供應導管4〇9,其中各流體供應導管4〇9 係設置以供應流體至個別及/或特定的孔4〇7。尤其是此具 體實施例更可用以實現一區域性流體供應系統,其中分離 之加熱流體可經由個別或成組的孔407供應到基材背側的 不同區域’因而提供根據個別孔407的位置而橫跨基材之 溫度控制,及流經個別孔4 0 7的加熱流體的溫度控制。此 具體實施例可例如用以在處理期間於基材的中央或邊緣附 近產生增加之溫度。 基板417及擴散構件405可使用一陶瓷材料(如完全壓 製之氮化鋁、礬土 Al2〇3、碳化矽(SiC))、聚合物塗布金屬 (例如聚四氟乙烯(Tefl〇n)TM聚合物塗布鋁或不鏽鋼),一聚In another embodiment of the invention, the fluid diffusion member 405 can comprise at least a porous material (e.g., a porous ceramic), for example, configured to allow fluid to flow therethrough. In this particular embodiment, the apertures 4〇7 are generally not required, however, the inventors have contemplated the practice of incorporating some of the apertures 4〇7 with the porous fluid diffusion member 405 to increase the necessary flow. Ceramic materials are also advantageous 'because they are inherently hydrophilic and substantially harder. In one aspect, the diffusing member 405 can be designed to have pores having a size from about 〇.丨 microns to about 500 microns. Because the fluid flow resistance through the diffusion member 405 is a function of the thickness of the diffusion member 405, this feature can be varied or varied to provide a desired fluid flow signature as desired. In another embodiment of the invention, the substrate 417 can have a plurality of fluid supply conduits 4〇9 formed therebetween, wherein each fluid supply conduit 4〇9 is configured to supply fluid to individual and/or specific apertures 4〇7 . In particular, this embodiment is more useful to implement a regional fluid supply system in which separate heating fluids can be supplied to individual regions of the back side of the substrate via individual or groups of apertures 407' thus providing a position depending on the individual apertures 407. Temperature control across the substrate, and temperature control of the heated fluid flowing through the individual holes 410. This particular embodiment can, for example, be used to create an increased temperature near the center or edge of the substrate during processing. The substrate 417 and the diffusion member 405 may use a ceramic material (such as fully pressed aluminum nitride, alumina Al2〇3, tantalum carbide (SiC)), polymer coated metal (for example, polytetrafluoroethylene (Tefl〇n)TM polymerization. Coating aluminum or stainless steel)

20 1355298 合物材料或適於半導體流體處理的其他材料製造^較佳的 聚合物塗層或聚合物材料是氟化聚合物,譬如20 1355298 Composite material or other material suitable for semiconductor fluid processing. Preferably, the polymer coating or polymer material is a fluorinated polymer, such as

TefZel(ETFE)、Halar(ECTFE)、PFA、PTFE、FEP,pVDFTefZel (ETFE), Halar (ECTFE), PFA, PTFE, FEP, pVDF

等。本發明之流體處理單元500的组態、組件及操作的更 詳細說明可在2003年10月6曰共同受讓予本案申請人之 美國專利申請案序號第10/680,325號中發現,其標題為r改 進用於面朝上之濕式處理的晶圓溫度均勻性的設備 (Apparatus to Improve Wafer Temperature Uniformity f〇r Face-up Wet Processing)」,其係在此藉由引用方式全數併 入本發明β 在操作中,基材401係由指狀件412固定,且係垂直 地定位在流體擴散構件405正上方β流體擴散構件405及 基材401間的空間,係以一藉由導管4〇9透過擴散構件4〇5 分配的溫度控制流體填充。該流體會接觸基材4〇!的背側 且轉移熱至其以加熱基材。在此具體實施例中,該基材大 體上是以與擴散構件405上表面平行之關係定位,且離開 擴散構件405上表面介於約0.1毫米與約15毫米之間,且 尤其是更遠離擴散構件405上表面在約〇.5及2毫米之間。 在本發明另一具體實施例中,平台組件4 0 3的内部可 包括一加熱器433,其可為一電阻式加熱器且係設置以增 加平台組件403之溫度’以加熱待處理的基材401。同樣 地,流體導管409及/或流體供應器可包括一加熱元件,係 設置以在流體接觸定位在支撐指狀件412上之基材4〇1 前’先加熱通過導管409的流體。該等加熱器可與系統控 21 制器ill連通,使得控制器lu可調節各自的 作,以控制流體及待處理之基材的溫度。 定位一基材401用於處理的過程,大體上 入位置及一處理位置間移動昇舉組件413。昇 係顯示在第4圖之左處理站4〇2中的—載入位 昇舉組件係在垂直位置,使得支撐指狀件412 418上方延伸。在此位置中,流體分配臂4〇6 在指狀件412上,以允許載入一基材4〇1。臂 積系統的其他流體分配臂)包括一靜止基座構辦 可伸縮地容置一上臂構件425。一驅動馬達可 構件426伸縮地移動上臂構件425,以調整臂 位置。基材401係藉由主框架機械臂120或基材 疋位在支撐指狀件412上,且接著指狀件412 動以從各自的機械臂/穿梭器12〇、3〇5移動基 旦基材401由指狀件412支撐在機械臂/穿梭】 上,接著機械臂/穿梭器12〇、3〇5可從基材4〇1 並且指狀件412可降低進到一處理位置内。 昇舉組件413係顯示在第4圖之右處理站 處理位置,其中昇舉組件413是垂直地定位, 412將基材401定位在最接近承接環418 419 直位置。在該處理位置中,流體分配臂4〇8被 在最接近基材401的上表面,如第4圖中處理在 昇舉組件413大體上係藉由一具動力之螺旋支 動,其係設置以垂直地致動昇舉組件413及裝 加熱器之操 涉及在一載 舉组件413 置中,其中 在上承接環 係垂直.分布 4 0 6(及該沉 ‘ 426 ,其係 相對於基座 406的垂直 穿梭器305 可垂直地致 材 401 。 一 i 120 ' 305 下方移走, 404中的一 因此指狀件 中之一的垂 降低且定位 404所示。 重具427致 附至其的組 22 1355298 且斑j:说 < 該流體處理單元的下部係、裳附至昇舉组件413 件41 4f自θ移動°處理單元的下部大體上包括基材支撐組 括指狀件4丨2及環411)、下方交錯壁424、及排 放口 314。i y ,, ^ ^ α组件403維持靜止且不隨著昇舉组件413 言膏參者性 6圖’基材支撐組件414大體上含有指狀件 枝件415、基材支撐表面415α、及環411。一置Wait. A more detailed description of the configuration, components, and operation of the fluid handling unit 500 of the present invention can be found in U.S. Patent Application Serial No. 10/680,325, the entire disclosure of which is incorporated herein by reference. r Appratus to Improve Wafer Temperature Uniformity f〇r Face-up Wet Processing, which is incorporated herein by reference in its entirety. In operation, the substrate 401 is fixed by the fingers 412 and vertically positioned between the β fluid diffusion member 405 and the substrate 401 directly above the fluid diffusion member 405, with a conduit 4〇9 The temperature control fluid dispensed through the diffusion member 4〇5 is filled. The fluid will contact the back side of the substrate 4 and transfer heat to it to heat the substrate. In this particular embodiment, the substrate is positioned generally parallel to the upper surface of the diffusing member 405 and is spaced apart from the upper surface of the diffusing member 405 by between about 0.1 mm and about 15 mm, and more particularly away from diffusion. The upper surface of member 405 is between about 55 and 2 mm. In another embodiment of the present invention, the interior of the platform assembly 430 may include a heater 433, which may be a resistive heater and configured to increase the temperature of the platform assembly 403 to heat the substrate to be processed. 401. Likewise, the fluid conduit 409 and/or fluid supply can include a heating element configured to heat the fluid passing through the conduit 409 prior to fluid contact with the substrate 4〇1 positioned on the support finger 412. The heaters can be in communication with the system controller ill such that the controller lu can adjust the respective operations to control the temperature of the fluid and the substrate to be treated. Positioning a substrate 401 for processing generally moves the lift assembly 413 between the position and a processing position. The lift-up is shown in the left processing station 4〇2 of Figure 4 - the load-lifting assembly is in a vertical position such that the support fingers 412 418 extend above. In this position, the fluid dispensing arms 4〇6 are on the fingers 412 to permit loading of a substrate 4〇1. The other fluid dispensing arms of the arming system include a stationary base structure that telescopically receives an upper arm member 425. A drive motor 426 can telescopically move the upper arm member 425 to adjust the arm position. The substrate 401 is clamped onto the support fingers 412 by the main frame robot 120 or substrate, and then the fingers 412 are moved to move the base from the respective arms/shuttles 12〇, 3〇5. The material 401 is supported by the fingers 412 on the robotic arm/shuttle, and then the robotic arms/shuttles 12〇, 3〇5 can be lowered from the substrate 4〇1 and the fingers 412 can be lowered into a processing position. The lift assembly 413 is shown in the right processing station processing position of Figure 4, wherein the lift assembly 413 is vertically positioned and 412 positions the substrate 401 in a straight position closest to the receiving ring 418 419. In this processing position, the fluid dispensing arm 4〇8 is positioned closest to the upper surface of the substrate 401, as in Figure 4, the lifting assembly 413 is generally supported by a powered helical screw. Actuating the lift assembly 413 and mounting the heater vertically involves positioning a carrier assembly 413, wherein the upper ring is vertically distributed. The distribution is 406 (and the sinker 426 is relative to the base The vertical shuttle 305 of 406 can be vertically 401. An i 120 ' 305 is removed below, and one of the 404s is thus lowered by one of the fingers and positioned 404. The weight 427 is attached thereto. Group 22 1355298 and spot j: said < the lower portion of the fluid treatment unit, attached to the lifting assembly 413 member 41 4f from the θ movement of the lower portion of the treatment unit substantially comprising the substrate support set including the fingers 4丨2 And ring 411), lower staggered wall 424, and drain 314. Iy , , ^ ^ α component 403 remains stationary and does not follow the lift component 413. The substrate support assembly 414 generally includes finger branches 415, substrate support surface 415α, and ring 411. . One set

放在基材支撐表面415Α上的基材係由垂直柱件415承接 或固定在本發明一態樣中,基材支撐組件4〖4係經設計 使得各種組件的熱膨脹不會影響基材支撐組件414固定停 留在基材支撐表面415A上的基材之能力。基材支撐組件 414的熱膨服可導致誤置及/或損壞置於垂直柱件415間的 基材。減少熱膨脹的一方法是使用具有低熱膨脹係數之材 料設計基材支撐組件414,例如鎢、礬土、或碳化硼《在 另一態樣中,環4 1 1可設計成具有之幾何形狀會使指狀件 4 1 2及垂直枉件4 1 5的移動減到最少。The substrate placed on the substrate support surface 415 is received or fixed by the vertical column member 415. The substrate support assembly 4 is designed such that thermal expansion of the various components does not affect the substrate support assembly. 414 The ability to secure a substrate that rests on the substrate support surface 415A. Thermal expansion of the substrate support assembly 414 can result in misplacement and/or damage to the substrate placed between the vertical columns 415. One method of reducing thermal expansion is to design a substrate support assembly 414 using a material having a low coefficient of thermal expansion, such as tungsten, alumina, or boron carbide. In another aspect, the ring 41 can be designed to have a geometric shape. The movement of the fingers 4 1 2 and the vertical jaws 4 1 5 is minimized.

各個各自的處理站4 02、4 04之下部各包括複數個交錯 受組件4 2 2。交錯壁组件4 2 2係設置以協同昇舉組件4 1 3 在第4圖中位置402所示的載入位置及在第4圖中位置404 所示的處理位置間移動。交錯壁組件422大體上包括上交 錯壁423’其係剛性地裝附至主框架113;及下交錯壁424, 其係裝附至昇舉組件413且設置以隨之移動。下交錯壁 424(特指位於最靠近單元之最内部的該對壁424)可用流體 充滿(譬如去離子水),其係搡作以密封處理站402 ' 404之 23 1355298 下部,與被包圍之環境的外部環境隔離。去離子水大體上 例例如透過一滴水器機構連續地提供至下交錯壁424間的 ♦ 空間。流體密封交錯壁组件422的使用允許本發明的處理 * 站402、4〇4脫離站402、404之旋轉密封428與該等站之 垂直密封的耦合,即在習知單元中,旋轉及垂直密封係定 位在一共同軸上,譬如本發明中的導管409。交錯壁組件 . 422允許在第7圖中所示之密封428僅是旋轉密封,而非 —旋轉密封及一垂直滑動密封的組合,其係難以在流體處 _ 理系…统中操作。 如上述,各該等站402、404、也可包括一上流體承接 環418及一下流體承接環419,如第4、5及7圖中所示。 各自的承接環418、419大體上至少包含從該等各自的站 402、40 4内部壁向内及向上延伸的環型構件。承接環418、 419可裝附至該等單元的内部壁或可與該等單元之内部壁 成為一體。承接環418、419之内部終止邊緣42u、42lb 大體上成形之直徑是大於待處理的基材401之直徑約5毫 φ 米與約5〇毫米間。因此,基材401在處理期間可透過各自 的環418、419垂直地昇舉及降低。此外,各承接環418、 41 9也分別包括一流體排水器42〇a、42〇b,係設置以收集 落在流體承接環418、419(參見第7圖)上之處理流體。流 體排水器420a、420b係與排放口 3 14以流體連通,如第7 圖尹所示。排放口 314連接至分離盒429上,在其中可使 氣體及液體彼此分離。分離盒429包括一定位在盒429上 部之氣體排出口 430,及一定位在盒下部的流體排出口Each of the respective processing stations 04, 044 includes a plurality of interleaved components 4 2 2 . The staggered wall assembly 4 2 2 is configured to move between the loading position shown at position 402 in FIG. 4 and the processing position shown at position 404 in FIG. 4 in conjunction with the lift assembly 4 1 3 . The staggered wall assembly 422 generally includes an upper interdigitated wall 423' that is rigidly attached to the main frame 113; and a lower staggered wall 424 that is attached to the lift assembly 413 and configured to move therewith. The lower staggered wall 424 (specifically, the pair of walls 424 located closest to the innermost portion of the unit) may be filled with a fluid (e.g., deionized water) that is sealed to seal the lower portion of the processing station 402'404, 23 1355298, and surrounded by The external environment of the environment is isolated. Deionized water is generally provided, for example, through a drip mechanism to the space between the lower staggered walls 424. The use of the fluid-tight staggered wall assembly 422 allows the processing* station 402, 4〇4 of the present invention to be disconnected from the vertical seals of the stations 402, 404 and the vertical seals of the stations, i.e., in conventional units, rotary and vertical seals The system is positioned on a common axis, such as conduit 409 in the present invention. The staggered wall assembly 422 allows the seal 428 shown in Figure 7 to be only a rotary seal, rather than a combination of a rotary seal and a vertical sliding seal that is difficult to operate in a fluid system. As noted above, each of the stations 402, 404 may also include an upper fluid receiving ring 418 and a lower fluid receiving ring 419 as shown in Figures 4, 5 and 7. The respective receiving rings 418, 419 generally comprise at least annular members extending inwardly and upwardly from the interior walls of the respective stations 402, 404. The receiving rings 418, 419 can be attached to the inner walls of the units or can be integral with the inner walls of the units. The inner end edges 42u, 42lb of the receiving rings 418, 419 are generally shaped to have a diameter greater than about 5 millimeters and about 5 millimeters from the diameter of the substrate 401 to be treated. Thus, the substrate 401 can be lifted and lowered vertically through the respective rings 418, 419 during processing. In addition, each of the receiving rings 418, 41 9 also includes a fluid drain 42a, 42b, respectively, configured to collect the treatment fluid that falls on the fluid receiving rings 418, 419 (see Figure 7). The fluid drains 420a, 420b are in fluid communication with the vents 3 14 as shown in Figure 7. The discharge port 314 is connected to the separation box 429 where the gas and liquid can be separated from each other. The separation box 429 includes a gas discharge port 430 positioned at the upper portion of the case 429, and a fluid discharge port positioned at the lower portion of the case.

24 —再承接口 432,其 集到的處理流體至一24 - Re-engagement interface 432, the processing fluid collected to one

1355298 431。分離盒429更包括 在承接環418、419上故 用β 請參考第7圖,承垃 八接環418及419係設 處理站402、404内之多 <夕個垂直位置用流體^ 例如,對於第一流體處理+ __ ^ y 步驟,可定位一基 材401上表面定位在稍微地超出上承接環 42la之上方。一第一處理流體可藉由流體分 分配至基材40 1上,同時基材4〇丨係在約每分 及約120 RPM間旋轉。基材4〇1的旋轉造成 的流體徑向向外流動離開基材。至於流過基 會向外及向下行進且被容置在上承接環418 體排水器420a承接,且如有需要可再循環用 一旦第一流體處理步驟完成,基材401 一第二處理位置,在該處基材401的上表面 下承接環419的終止端421b之上,用於第 驟。基材4 0 1係在此位置以與第一處理步驟 理,且在此過程中使用過之流體可由流體排 集。此組態的優點在於多種流體化學品可使 站中。此外,流體處理化學品可為相容或不 各具有獨立流體排水器420a、420b的分 4 1 8、4 1 9允許分開地收集不相容之處理流體 在操作中,本發明的沉積系統1 00之具 以實施一無電前清潔製程、一無電活化製程 係設置以傳遞 回收元件再利 置以在各該等 【理基材401。 材4 0 1使得基 4 1 8的終.止端 配臂 406 ' 408 鐘 5 轉(5RPM) 分配至基材上 材邊緣的流體 。流體可由流 於後續處理。 可垂直移動至 係稍微地超出 二流體處理步 相同之方式處 水器 420b收 用在單一處理 可相容,因為 _流體承接環 〇 體實施例可用 、一無電電鍍 25 1355298 製程、一無電後清潔製程及/或其他可用於一無電製程之處 理步驟。現將參考第1-5圖中所示的本發明具體實施例, 說明一使用本發明具體實施例供實施無電電鍍製程之範例 性製程程序。無電電鍍製程大體上從送入一基材到已被包 圍的處理環境302中開始。該送入製程大體上包括開啟具 有閥的接口 304且以主框架機械臂120送入一基材401進 到處理環境302中。基材401係以面朝上之方向送入,即, 待電鍍之基材401的表面係面朝上。1355298 431. The separation box 429 is further included on the receiving rings 418, 419. Therefore, reference is made to Figure 7, and the eight-rings 418 and 419 are arranged to be used in the processing stations 402 and 404. For the first fluid treatment + __ ^ y step, the upper surface of a substrate 401 can be positioned slightly above the upper receiving ring 42la. A first treatment fluid can be dispensed onto the substrate 40 1 by fluid dispensing while the substrate 4 is rotated between about every minute and about 120 RPM. The rotation of the substrate 4〇1 causes the fluid to flow radially outward away from the substrate. As for the flow through the base, it will travel outward and downward and be received by the upper receiving ring 418 body drain 420a, and if necessary, can be recycled. Once the first fluid processing step is completed, the substrate 401 has a second processing position. At this point, the upper surface of the substrate 401 is received over the terminating end 421b of the ring 419 for the first step. The substrate 410 is in this position with the first processing step, and the fluid used in the process can be discharged by the fluid. The advantage of this configuration is that multiple fluid chemicals can be placed in the station. In addition, the fluid treatment chemicals may be compatible or not each having separate fluid drains 420a, 420b, respectively, allowing for the separate collection of incompatible process fluids in operation, the deposition system of the present invention 1 The 00 is configured to implement an electroless pre-cleaning process, and an electroless activation process is provided to transfer the recycling components for further disposal of the substrates 401. The material 4 0 1 causes the final end of the base 4 1 8 to be 406 ' 408 rpm 5 rpm (5 RPM) to distribute the fluid to the edge of the substrate. Fluid can flow through subsequent processing. It can be moved vertically to the extent that it is slightly beyond the two-fluid processing step. The water 420b can be used in a single process to be compatible, because the _fluid-receiving ring body embodiment is available, an electroless plating 25 1355298 process, and a clean after no electricity. Process and/or other processing steps that can be used in an electroless process. An exemplary process for performing an electroless plating process using a specific embodiment of the present invention will now be described with reference to the specific embodiment of the invention illustrated in Figures 1-5. The electroless plating process generally begins with feeding into a substrate to a surrounding processing environment 302. The feeding process generally includes opening the valved interface 304 and feeding the substrate 401 into the processing environment 302 with the main frame robot 120. The substrate 401 is fed in a face-up direction, that is, the surface of the substrate 401 to be plated faces upward.

一旦基材送入被包圍的處理環境302中,主框架機械 臂120將基材定位在處理站404中之支撐指狀件412上,Once the substrate is fed into the enclosed processing environment 302, the main frame robot 120 positions the substrate on the support fingers 412 in the processing station 404,

且主框架機械臂從處理包圍件302縮回。指狀件412然後 可垂直地定位基材401用於處理,同時閥存取口 3 04關閉。 在送入過程中,即,當在具有閥之存取口 304開啟時,在 環境控制組件3 1 5中的氣體供應器開啟,且造成以惰性處 理氣體填充被包圍的處理環境3 0 2。將惰性氣體流入處理 容積的製程造成處理氣體通過具有閥之接口 304向外流 動,具有閥之接口 304係設置以防止周圍氣體(尤其是氧氣) 進入被包圍的處理環境302中,因為氧氣已知對已電鍍材 料具有不利的影響(氧化),且尤其是對於銅。處理氣體之 流動在具有閥之存取口 3 04關閉後仍繼續,並且大體上在 具有閥之接口 3 04開啟前會打開。處理氣體的流動在無電 清潔、活化及電鍍程序期間會持續,且排放口 3 1 4、一氣 體通風孔、及/或真空泵可用以在一旦具有閥之存取口 304 關閉時,維持在被包圍之處理環境302中的需求處理壓And the main frame robot arm is retracted from the process enclosure 302. Finger 412 can then position substrate 401 vertically for processing while valve access port 304 is closed. During the feed, i.e., when the access port 304 with the valve is open, the gas supply in the environmental control assembly 315 opens and causes the enclosed process environment 3 0 2 to be filled with the inert process gas. The process of flowing the inert gas into the process volume causes the process gas to flow outwardly through the interface 304 having a valve, and the interface 304 having the valve is arranged to prevent ambient gas (especially oxygen) from entering the enclosed process environment 302 because oxygen is known. It has an adverse effect (oxidation) on the plated material, and especially for copper. The flow of process gas continues after the valve having the valve opening 34 is closed and generally opens before the valve interface 34 is opened. The flow of process gas may continue during the electroless cleaning, activation, and plating process, and the vent 31, a gas vent, and/or a vacuum pump may be used to remain enclosed once the access port 304 having the valve is closed. Demand processing pressure in the processing environment 302

26 1355298 力。該氣體供應器、一 HEPA過濾器及排放口 314的组合, 係在特定處理步驟中控制在被包圍處理環境302中之氧含 量,即視需要可控制且對於各個別的處理步驟可最佳化在 包圍件302中之氧含量。26 1355298 Force. The combination of the gas supply, a HEPA filter, and the vent 314 controls the oxygen content in the enclosed processing environment 302 in a particular processing step, i.e., controllable as needed and optimized for each additional processing step. The oxygen content in the enclosure 302.

一旦基材已定位在處理單元中,本發明的無電電鍍製 程大體上從一基材前清潔製程開始。該前清潔製程以基材 的上表面開始,其係定位在比上承接環 418终止端 4 21a 的上表面稍微高(大體上在約2毫米及約1 0毫米間)。該清 潔製程經由一藉著流體分配臂4 0 6分配到基材表面上之清 潔溶液而完成。該清潔溶液可在降低過程中分配到基材表 面上,以節省單元的製程時間及增加產量。清潔溶液可為 酸性或鹼性溶液,取決於需求的清潔特徵,且可依據處理 製程控制清潔溶液的溫度(加熱或冷卻)。此外,清潔溶液 可包括一介面活性劑添加物。基材之旋轉(大體上在約1 0 RPM及60 RPM間)造成清潔溶液徑向向外流動離開基材且 流到承接清潔溶液之上承接環 41 8上、傳送至排水器 420a,且接著經由排放σ 3 14傳遞至分離盒429,視需要 用於分離及再循環。Once the substrate has been positioned in the processing unit, the electroless plating process of the present invention generally begins with a substrate pre-cleaning process. The pre-cleaning process begins with the upper surface of the substrate and is positioned slightly above the upper surface of the terminating end 4 21a of the upper receiving ring 418 (generally between about 2 mm and about 10 mm). The cleaning process is accomplished via a cleaning solution dispensed onto the surface of the substrate by a fluid dispensing arm 406. The cleaning solution can be dispensed onto the substrate surface during the reduction process to save unit time and increase throughput. The cleaning solution can be an acidic or alkaline solution, depending on the cleaning characteristics required, and the temperature of the cleaning solution (heating or cooling) can be controlled according to the process. Additionally, the cleaning solution can include a surfactant additive. The rotation of the substrate (generally between about 10 RPM and 60 RPM) causes the cleaning solution to flow radially outwardly away from the substrate and onto the receiving cleaning solution over the receiving ring 41 8 , to the drain 420a, and then It is passed to the separation box 429 via the discharge σ 3 14 for separation and recycling as needed.

一旦基材已清潔,大體上會沖洗基材表面。沖洗製程 包括分配一沖洗溶液(例如去離子水)到基材表面,同時轉 動基材。沖洗溶液係以一設置以有效從基材表面移走任何 殘餘清潔流體之流動速率及溫度分配。基材係以一足夠促 使沖洗溶液離開基材表面的速度轉動,即例如在約5 RPM 及約120 RPM之間。Once the substrate has been cleaned, the substrate surface is generally rinsed. The rinsing process involves dispensing a rinsing solution (e.g., deionized water) onto the surface of the substrate while rotating the substrate. The rinsing solution is in a set to effectively remove the flow rate and temperature distribution of any residual cleaning fluid from the surface of the substrate. The substrate is rotated at a rate sufficient to cause the rinsing solution to exit the surface of the substrate, i.e., between about 5 RPM and about 120 RPM.

27 135529827 1355298

基材一旦沖洗後,可利用一第二沖洗步驟。尤其是在 一活化步驟(其大體上包括施加一酸性活化溶液至基材表 面)前,首先以一酸性調節沖洗溶液處理基材表面。調節沖 洗溶液大體上包括酸,譬如使用於活化溶液之酸,例如其 可操作以調節基材表面,用於施加酸性活化溶液。可用作 調節溶液的範例性酸包括硝酸、以氣化物基礎之酸、曱基 硫酸基酸、及一般用於無電活化溶液的其他酸。基材.調節 過程可在一鄰近上承接環418之處理位置實施,或基材可 降低至一鄰近下承接環419之處理位置,取決於用於調節 製程之化學品與用作前清潔製程的化學品間的相容性。 一旦基材已調節後,當基材定位在最接近下承接環 4 1 9時,活化溶液會被施加於基材表面。活化溶液藉由臂 408被分配至基材,且由於基材轉動造成其徑向朝外流過 基材邊緣且到承接環4 1 9上。活化溶液則由流體排水器420 收集用於再循環。活化溶液大體上包括一具有酸基的鈀鹼 性溶液。在活化步驟期間,背側基材表面(其大體上是環形 及類似擴散構件405之直徑)大體上是定位在離擴散構件 405上表面約0.5毫米及約10毫米間。基材背側及擴散構 件4 0 5間的空間係用一溫度控制流體填充,其可為來自形 成於擴散構件405内之流動孔407所分配的去離子水。從 該等孔4 0 7分配的溫度控制流體(大體上是加熱流體,但也 可為冷卻流體)接觸基材背側且轉移熱從基材至流體/或自 流體轉移到基材,以加熱/冷卻基材用於處理。流體可連續 或交替地供應、可供應預定容積的流體然後終止流體供Once the substrate has been rinsed, a second rinsing step can be utilized. In particular, prior to an activation step which generally involves applying an acidic activation solution to the surface of the substrate, the surface of the substrate is first treated with an acidic conditioning rinse solution. The conditioning rinse solution generally comprises an acid, such as an acid used in the activation solution, for example, it is operable to condition the surface of the substrate for application of an acidic activation solution. Exemplary acids useful as conditioning solutions include nitric acid, vapor based acids, mercaptosulfato acids, and other acids commonly used in electroless activation solutions. The substrate. The conditioning process can be carried out at a processing location adjacent to the receiving ring 418, or the substrate can be lowered to a processing location adjacent to the lower receiving ring 419, depending on the chemicals used to adjust the process and used as a pre-cleaning process. Compatibility between chemicals. Once the substrate has been adjusted, the activation solution is applied to the surface of the substrate as the substrate is positioned closest to the lower receiving ring 4 1 9 . The activation solution is dispensed to the substrate by arms 408 and flows radially outward through the edge of the substrate and onto the receiving ring 4 1 9 due to rotation of the substrate. The activation solution is then collected by fluid drain 420 for recycling. The activation solution generally comprises a palladium alkaline solution having an acid group. During the activation step, the backside substrate surface (which is generally annular and similar to the diameter of the diffusion member 405) is positioned generally between about 0.5 mm and about 10 mm from the upper surface of the diffusion member 405. The space between the back side of the substrate and the diffusion member 405 is filled with a temperature control fluid which may be deionized water dispensed from the flow holes 407 formed in the diffusion member 405. The temperature control fluid (generally a heating fluid, but also a cooling fluid) dispensed from the holes 407 contacts the back side of the substrate and transfers heat from the substrate to the fluid/or from the fluid to the substrate for heating / Cooling the substrate for processing. The fluid may be supplied continuously or alternately, may supply a predetermined volume of fluid and then terminate the fluid supply

28 1355298 應。接觸基材背側的流體之流動可加以控制,以在活化製 程期間維持一固定基材溫度。此外,在活化製程中,基材 可在約1 Orpm及约1 OOrpm間轉動,以有助於均勻加熱/冷 卻及流體散開。28 1355298 should be. The flow of fluid contacting the back side of the substrate can be controlled to maintain a fixed substrate temperature during the activation process. In addition, during the activation process, the substrate can be rotated between about 10 rpm and about 100 rpm to aid in uniform heating/cooling and fluid spreading.

一旦基材表面已活化,可施加一額外沖洗及/或清潔溶 液至基材表面,以自基材清洗活化溶液。可在活化後使用 之第一沖洗及/或清潔溶液包括另一種酸,較佳是經選.定以 與活化溶液的酸匹配。在酸性後沖洗後,基材也可用一中 性溶液沖洗,例如去離子水,以從基材表面移走任何殘餘 酸。後活化清潔及沖洗步驟可在上處理位置或下處理位置 實施,取決於化學作用的相容性。Once the surface of the substrate has been activated, an additional rinse and/or cleaning solution can be applied to the surface of the substrate to wash the activation solution from the substrate. The first rinse and/or cleaning solution that can be used after activation includes another acid, preferably selected to match the acid of the activation solution. After rinsing after acid, the substrate can also be rinsed with a neutral solution, such as deionized water, to remove any residual acid from the surface of the substrate. The post-activation cleaning and rinsing steps can be carried out in the upper or lower processing position depending on the compatibility of the chemical action.

當完成活化步驟後,基材可藉由穿梭器305從活化站 404轉移到沉積站 402。轉移過程包括用昇舉指狀件412 升高基材離開活化站402、在基材下移動穿梭器305、降低 基材到穿梭器305上、且從活化站404轉移基材到沉積站 404。一旦基材在沉積站402中,用於沉積站402的基材支 撐指狀件412可用以從穿梭器305移走基材且定位基材用 於處理。 基材的定位大體上包括將基材定位在最靠近上承接環 4 1 8用於前清潔製程。前清潔製程包括以臂408分配前清 潔溶液至基材上,其中前清潔溶液大體上是經選擇以具有 與後續將施加之無電電鍍溶液類似的pH值,因此前清潔 溶液可調節基材表面成為沉積溶液的pH值。前清潔溶液 可為一鹼性溶液,其係與調節步驟後將施加的無電沉積溶Upon completion of the activation step, the substrate can be transferred from activation station 404 to deposition station 402 by shuttle 305. The transfer process includes lifting the substrate away from the activation station 402 with the lift fingers 412, moving the shuttle 305 under the substrate, lowering the substrate onto the shuttle 305, and transferring the substrate from the activation station 404 to the deposition station 404. Once the substrate is in deposition station 402, substrate support fingers 412 for deposition station 402 can be used to remove the substrate from shuttle 305 and position the substrate for processing. The positioning of the substrate generally includes positioning the substrate closest to the upper receiving ring 4 1 8 for the front cleaning process. The pre-cleaning process includes dispensing the pre-cleaning solution onto the substrate with arms 408, wherein the pre-cleaning solution is generally selected to have a similar pH value as the subsequent electroless plating solution to be applied, so the front cleaning solution can adjust the surface of the substrate to become The pH of the deposition solution. The pre-cleaning solution may be an alkaline solution which is dissolved in the electroless deposition to be applied after the conditioning step

29 1355298 以具有與電鍍溶液相同pH值的溶液前清29 1355298 Pre-cleared with a solution having the same pH as the plating solution

液之基礎相同。以 潔基材表面,也改 胃 性劑及/或還原劑。基材大體上是降低到一稍微在下承接環 419上方之位置,用於沉積步驟。因此,由臂4〇8施加之 沉積溶液向外流過基材的邊緣且由承接環419容置,在該 處其可被排水器420b收集用於可能的再循環。此外,在沉 積步驟期間’基材背側大體上定位於離擴散構件4〇5上表 面約0 · 5毫米及約1 〇毫米間,或介於約1毫米及約5毫米 間。基材背側及擴散構件405間的空間係用一溫度控制(大 體上係加熱)流體填充’其可為經由形成於擴散構件4〇5 φ 内之流動孔407所分配的去離子水。自該等孔407分配的 溫度控制流體接觸基材背側且從流體轉移熱到基材,以加 •熱基材用於沉積製程。在整個沉積製程中,流鱧大體上係 連續地供應。在沉積製程中接觸基材背側的流體流動係受 控制,以在沉積製程期間維持一固定基材溫度。此外, 沉積製程中,基材可在約10 RPM及約1 00 RPM間轉動, 以有助於均勻加熱及分散施加至基材表面之沉積溶液。 一旦完成沉積製程,基材表面大體上會在一後沉積青 1355298The basis of the liquid is the same. To clean the surface of the substrate, also change the stomach agent and / or reducing agent. The substrate is generally lowered to a position slightly above the lower receiving ring 419 for the deposition step. Thus, the deposition solution applied by the arms 4〇8 flows outwardly through the edge of the substrate and is received by the receiving ring 419 where it can be collected by the drain 420b for possible recirculation. Moreover, during the deposition step, the back side of the substrate is positioned generally between about 0.5 mm and about 1 mm, or between about 1 mm and about 5 mm, from the surface of the diffusion member 4〇5. The space between the back side of the substrate and the diffusion member 405 is filled with a temperature controlled (generally heated) fluid which can be deionized water dispensed through the flow holes 407 formed in the diffusion member 4〇5 φ. The temperature control fluid dispensed from the holes 407 contacts the back side of the substrate and transfers heat from the fluid to the substrate to add a thermal substrate for the deposition process. The flow is generally supplied continuously throughout the deposition process. The fluid flow contacting the back side of the substrate during the deposition process is controlled to maintain a fixed substrate temperature during the deposition process. In addition, the substrate can be rotated between about 10 RPM and about 100 RPM during the deposition process to help uniformly heat and disperse the deposition solution applied to the surface of the substrate. Once the deposition process is completed, the surface of the substrate will generally deposit a green after 1355298

潔製程中清潔,該製程包括施加一後沉積清潔溶液至基 材。該後沉積清潔製程可在上或下處理位置處實施,取決 於該等製程化學的相容性。後沉積清潔溶液大體上包括一 鹼性溶液,其具有與電鍍溶液大約相同的pH值。基材在 清潔製程期間中轉動,以促使清潔溶液離開基材表面。一 旦完成清潔製程,可例如用去離子水沖洗基材表面,且旋 轉乾燥以將任何殘餘化學品從基材表面移走。或者是.,基 材經由施加具有高蒸汽壓力之溶劑(譬如丙酮、酒精等等) 以蒸汽乾燥。 在本發明範例性處理系統1 00中,處理單元位置1 02 及 112可設置以實施一無電前清潔製程、一無電活化製 程、及一無電後活化清潔製程,同時處理單元位置104、Cleaning during the cleaning process involves applying a deposition of a cleaning solution to the substrate. The post deposition cleaning process can be performed at the upper or lower processing locations, depending on the compatibility of the process chemistries. The post-deposition cleaning solution generally comprises an alkaline solution having about the same pH as the plating solution. The substrate is rotated during the cleaning process to cause the cleaning solution to leave the surface of the substrate. Once the cleaning process is complete, the surface of the substrate can be rinsed, for example, with deionized water, and dried to remove any residual chemicals from the surface of the substrate. Alternatively, the substrate is dried by steam by applying a solvent having a high vapor pressure (e.g., acetone, alcohol, etc.). In the exemplary processing system 100 of the present invention, the processing unit locations 102 and 112 can be configured to implement an electroless pre-cleaning process, an electroless activation process, and an electroless post-activation cleaning process while processing the cell location 104,

11 0可經設置成為無電沉積單元及無電後沉積清潔單元。 在此組態中,來自各自的製程之化學品的回收係可行,因 為各自的活化及沉積化學品係分隔在各自的處理位置中。 此組態的另一優勢為基材是在惰性環境中從活化溶液轉移 到無電沉積溶液,因為流體處理單元位置1 02、1 04、11 0、 112的處理空間是在被包圍的處理環境302内。再者,該 處理包圍件在載入及處理期間係充滿惰性氣體,且因此被 包圍處理環境302的内部具有實質上已減少的氧百分比, 例如少於約lOOppm之氧,或尤其是更少於約50ppm之氧, 或仍更少於約l〇ppm之氧。實質上減少之氧含量,連同活 化及電鍍單元間緊密接近及快速轉移時間(大體上少於約 1 0秒)的組合,可操作以防止在活化及沉積步驟間基材表11 0 can be set as an electroless deposition unit and a deposition cleaning unit after no electricity. In this configuration, recovery of chemicals from their respective processes is feasible because the respective activation and deposition chemicals are separated in their respective processing locations. Another advantage of this configuration is that the substrate is transferred from the activation solution to the electroless deposition solution in an inert environment because the processing space of the fluid processing unit locations 102, 104, 110, 112 is in the enclosed processing environment 302. Inside. Moreover, the process enclosure is filled with inert gas during loading and processing, and thus has a substantially reduced percentage of oxygen, such as less than about 100 ppm oxygen, or especially less than the interior of the surrounding processing environment 302. About 50 ppm of oxygen, or still less than about 1 ppm of oxygen. The substantially reduced oxygen content, combined with the close proximity of the activation and plating units and the rapid transfer time (generally less than about 10 seconds), is operable to prevent substrate tables between activation and deposition steps.

31 (D 1355298 面的氧化,其對於習知無電系統是一明顯的挑戰。 在本發明的整個流體處理步驟中,基材位置可改變。 尤其是基材相對於流體擴散構件405的垂直位置可改變。 例如在處理期間,視需要可增加與擴散構件405之距離以 降低基材的溫度。同樣地,在處理期間可減少基材與擴散 構件405之接近距離,以增加基.材的溫度。31 (D 1355298 Surface oxidation, which is a significant challenge for conventional electroless systems. In the entire fluid processing step of the present invention, the substrate position can be varied. In particular, the vertical position of the substrate relative to the fluid diffusion member 405 can be For example, during processing, the distance from the diffusion member 405 may be increased as needed to lower the temperature of the substrate. Likewise, the proximity of the substrate to the diffusion member 405 may be reduced during processing to increase the temperature of the substrate.

本發明具體實施例的另一優勢是處理系統1 0 0可g己合 相容或不相容化學品使用。例如,在利用不相容化學品(例 如,酸性活化溶液及驗性電鐘溶液)之處理程序中,酸性溶 液大體上將專用於一單元或站中,而鹼性溶液專用於另一 單元中。可將該等單元相鄰地定位,且可由該等穿梭器305 中之一在各自的單元間轉移基材。基材大體上在被轉移到 鄰近單元前先在各單元中清潔,其防止來自一單元的化學 品污染另一單元。此外,各處理站或單元内的多重處理位 置,例如承接環4 1 8、4 1 9的定位允許在單一單元或站中使 用不相容化學品,因為各自的化學品可藉由不同承接環 418、419收集,並且彼此分離。 本發明的具體實施例也可經設置為單次使用型化學單 元,即,一單一劑量之製程化學品可用於一單一基材而後 拋棄而不回收溶液,即,不會再用以處理額外之基材。例 如,處理系統1 0 0可利用共同單元以活化、清潔、及/或後 處理一基材,同時用其他單元以實施一無電沉積及/或後沉 積清潔製程。由於各個此等製程可利用不同化學品,該單 元大體上係設置以當需要時供應各種所需之化學品給基Another advantage of a particular embodiment of the invention is that the treatment system 1000 can be used with compatible or incompatible chemicals. For example, in a treatment procedure using incompatible chemicals (eg, an acidic activation solution and an electrochemical clock solution), the acidic solution will generally be dedicated to one unit or station, while the alkaline solution is dedicated to another unit. . The cells can be positioned adjacently and the substrate can be transferred between the respective cells by one of the shuttles 305. The substrate is generally cleaned in each unit prior to being transferred to an adjacent unit, which prevents chemicals from one unit from contaminating another unit. In addition, the multiple processing locations within each processing station or unit, such as the positioning of the receiving rings 4 18 , 41 19 , allow the use of incompatible chemicals in a single unit or station, as the respective chemicals can be replaced by different rings. 418, 419 were collected and separated from each other. Particular embodiments of the invention may also be provided as single-use chemical units, i.e., a single dose of process chemical can be used on a single substrate and then discarded without recycling the solution, i.e., no additional processing is required. Substrate. For example, the processing system 100 can utilize a common unit to activate, clean, and/or post-treat a substrate while using other units to perform an electroless deposition and/or post-deposition cleaning process. Since each of these processes can utilize different chemicals, the unit is generally configured to supply a variety of desired chemicals to the base when needed.

32 1355298 材,且一旦完成製程時自其排出已使用的化學品》然而, 該等單元大體上不是設置以回收該等化學品,因為自單一 單元回收不同化學品會出現實質的污染問題。32 1355298 Materials, and the used chemicals are discharged from the process once the process is completed. However, these units are not generally designed to recover such chemicals, as substantial contamination problems can occur from the recovery of different chemicals from a single unit.

可用在本發明具體實施例之額外處理單元可在 2001 年7月10日領證且共同受讓予本案申請人之美國專利第 6,25 8,223號t ,其標題為「電锻系統中之就地無電銅晶種 層增進(In-Situ Electroless Copper Seed Layer Enhancement in an Electroplating System)」,及 2 00 1 年 12 月26曰之共同受讓美國專利申請案序號第i〇/036,321號 中發現’其標題為「無電電鍵系統(Electroless PlatingAn additional processing unit that can be used in a specific embodiment of the present invention can be issued on July 10, 2001, and is commonly assigned to the present applicant, U.S. Patent No. 6,25 8,223, entitled "In-Place in Electric Forging System" In-Situ Electroless Copper Seed Layer Enhancement in an Electroplating System, and the commonly-assigned U.S. Patent Application Serial No. i 〇/036,321, issued December 26, 2001 'The title is "Electroless Plating System" (Electroless Plating)

System)」,二者均在此係藉由引用方式將其全數一致地併 入本發明。 噴灑分配系統 第8圖示範面朝上之無電處理單元1010的一具體實施 例之斷面側視圖’其類似於上述各站4〇2、404。一方位朝 上之基材係顯示在第8圖中125〇處。名詞「無電製程」(或 者無電’沉積製程)大體上意指涵蓋所有沉積無電沉積薄膜 於基材上所完成之製程步驟,包括例如一或多個前清潔製 程步驟(基材準備步驟)、無電活化製程步驟、無電沉積步 驟、及後清潔及/或沖洗步驟。 無電處理單疋1〇1〇包括一單元本體1015。單元本體 1〇15可自已知與流體處理(無電或ECP)溶液不起作用的各 種物質製造。此等物質包括塑膠、聚合物及陶竞。在第8"System"", both of which are hereby incorporated by reference in their entirety in their entirety. Spray Dispensing System Figure 8 illustrates a cross-sectional side view of a particular embodiment of a face-up electroless processing unit 1010 that is similar to the stations 4, 2, 404 described above. The substrate facing in one direction is shown at 125 第 in Fig. 8. The term "electroless process" (or electroless deposition process) generally refers to a process step that covers all deposited electroless deposition films on a substrate, including, for example, one or more pre-cleaning process steps (substrate preparation steps), no electricity. An activation process step, an electroless deposition step, and a post-cleaning and/or rinsing step. The electroless processing unit 1疋1〇 includes a unit body 1015. The unit body 1〇15 can be fabricated from a variety of materials known to be ineffective with fluid handling (electroless or ECP) solutions. These materials include plastics, polymers and Tao Jing. At 8th

33 1355298 圖的配置令,單元本體1015界定一形成在用於單元ι〇ι〇 . 一徑向側壁之圓形本體》單元本體1015在其上端容置且支 撐一蓋組件1033。一體成形之底部壁1016在沿其底端設 * 置有單疋本想1015且可由一基板1〇12支撐。底部壁1〇16 具有一開口,用於容置一基材支樓组件1299。甚从士# i何又撰組 件1299的特性係描述於下。 在—具體實施例中,基材支撐組件1299大體上包括一 基板構件1 304,及—裝附至其之流體擴散構件13〇2。在第 ® 8-11圖中描述的基材支撐組件1299,示範上述平台組件 403的另一具體實施例。一環形密封1121(如〇形環型式 之密封件)係定位在靠近流體擴散構件1 3〇2的周邊。此環 形密封112 1大體上係設置以接合基板構件13〇4的頂部外 緣’以在流體擴散構件1 302及基板構件1 3 〇4間產生一济 體緊密密封,而有利於流體傳遞過程。 基板構件13 04大體上界定一固體盤狀構件,其具有一 通過其中央部分,或通過板1 304上另—位置形成的流體通 φ 道1308。基板13 04最好是從_陶瓷材料或已塗布的金屬 製造《也可以使用PVDF材料。流體容積13 1〇係形成在基 板構件1 304上且在流體擴散構件1302下面。以此方式, 流體擴散構件1 3 02係定位在基板構件1304上。流體容積 1310在流體擴散構件1302及基板13〇4間具有之間距大體 上係介於約2毫米及约15毫米間;然而,可使用較大或較 小的間距。 流體擴散構件1 302包括複數個形成其間的流體通道33 1355298 The configuration of the figure is such that the unit body 1015 defines a circular body formed on a radial side wall of the unit body 1015. The unit body 1015 receives and supports a cap assembly 1033 at its upper end. The integrally formed bottom wall 1016 is provided with a single cymbal 1015 along its bottom end and supported by a substrate 1 〇12. The bottom wall 1〇16 has an opening for receiving a substrate branch assembly 1299. The characteristics of the article 1299 are described below. In a particular embodiment, substrate support assembly 1299 generally includes a substrate member 1 304, and a fluid diffusion member 13A2 attached thereto. Another embodiment of the above described platform assembly 403 is illustrated by the substrate support assembly 1299 described in Figures 8-11. An annular seal 1121 (e.g., a serpentine type seal) is positioned adjacent the periphery of the fluid diffusion member 132. The annular seal 112 1 is generally configured to engage the top outer edge ' of the substrate member 13 〇 4 to create a tight seal between the fluid diffusion member 1 302 and the substrate member 13 〇 4 to facilitate the fluid transfer process. The substrate member 134 generally defines a solid disk member having a fluid passage φ 1308 formed through its central portion or through another position on the plate 1 304. Substrate 13 04 is preferably fabricated from a ceramic material or a coated metal. "PVDF materials can also be used. A fluid volume 13 1 is formed on the substrate member 1 304 and below the fluid diffusion member 1302. In this manner, the fluid diffusion member 103 is positioned on the substrate member 1304. The fluid volume 1310 has a distance between the fluid diffusion member 1302 and the substrate 13A4 that is generally between about 2 mm and about 15 mm; however, a larger or smaller spacing can be used. The fluid diffusion member 1 302 includes a plurality of fluid passages formed therebetween

34 1355298 1306。該等流體通道ISM $ 6連接》IL體擴散構件1 3 02的上表 面到流體容積1 3 1 〇。如已招屮的 已知出的’流體擴散構件1 302的 周邊部分大體上係密封地與基 兴丞坂構件13 04連通。依此方 式,流體可經由流體通道 U8 Μ入流體容積1 3 1 0。流體 係從流體通道13〇8λ σ + t /Λ已密封的流體容積1 3 1 0 ,然後通 過形成在擴散構件13〇2中 成體通道13〇6,且進入在基 材1 2 5 0背側與流體擴散 稱仔1302間之熱轉移區域1?12。34 1355298 1306. The fluid passages ISM $6 are connected to the upper surface of the IL body diffusion member 1 3 02 to a fluid volume of 1 3 1 〇. The peripheral portion of the known 'fluid diffusion member 1 302, as has been recruited, is in generally sealingly in communication with the enthalpy member 13 04. In this manner, fluid can be forced into fluid volume 1 3 1 0 via fluid passage U8. The flow system is from the fluid passage 13〇8λ σ + t /Λ the sealed fluid volume 1 3 1 0 , then through the adult passage 13〇6 formed in the diffusion member 13〇2, and enters the back of the substrate 1 2 50 The heat transfer zone between the side and the fluid diffusion weighs 1302 is 1-12.

在第8圖的配置中,可* jt 1 〇 π *3 β _ 直1F 了在12〇3見到流體來源。更明確 s之’流體來源是去離早士。、节Μ α 疋古離千水。流體自DI水源1203流動且 通過基材流體加熱器U64。峭辨 益Α i 。流體加熱器n 64將水加熱到 需求溫度。如在此使用, «用之流體加熱|§ 1164可為將能量賦予 處理流體的任何類型之+彳生 , 顆1之7^件。該加熱器較佳是具外套型電 阻加熱器(如’加熱器透過入口管壁加熱流體)而非浸入型 加熱器(如,加熱器元件接觸該溶液)。結合一製程控制器 1280及溫度探針1154(未顯示)一起使用的加熱器1164,可 用以確保進入熱轉移區域1312的DI水係在需求的溫度。 該DI水離開加熱器且流經管U66到達流體入口 1 308。DI水自該處會注入通過基板構件13〇4,通過流體 擴散構件1 302 ,且進入在流體擴散構件13〇2及基材125〇 間之熱轉移區域1312。基材1250後被加溫流體的存在, 最後會使基材1 2 5 0之背側加溫。一均勻且升高的基材溫度 有利於無電電鐘操作。複數個加熱帶1112視需要可嵌入基 板構件1304中’且需要時可個別地控制,以更精確地控制 流入熱轉移區域1312的DI水之溫度,且因此控制在處理 ⑧ 35 1355298 期間的基材温度。尤其是,對加熱帶1 11 2的個別控制更允 許精確控制基材表面溫度,其對於無電電鍍製程係很重要。In the configuration of Fig. 8, it is possible to see the fluid source at 12〇3 by *jt 1 〇 π *3 β _ straight 1F. More specifically, the source of the fluid is to leave the early sergeant. , thrift, 疋 疋 ancient away from thousands of water. Fluid flows from the DI water source 1203 and through the substrate fluid heater U64.峭 Α Α i. Fluid heater n 64 heats the water to the desired temperature. As used herein, «heated with fluids|§ 1164 can be used to impart energy to any type of treatment fluid, a 7-piece. Preferably, the heater is provided with an over-type resistive heater (e.g., the heater heats the fluid through the inlet tube wall) rather than the immersion heater (e.g., the heater element contacts the solution). A heater 1164, used in conjunction with a process controller 1280 and a temperature probe 1154 (not shown), can be used to ensure that the DI water entering the heat transfer zone 1312 is at the desired temperature. The DI water exits the heater and flows through tube U66 to fluid inlet 1 308. From there, the DI water is injected through the substrate member 13〇4, through the fluid diffusion member 1302, and into the heat transfer region 1312 between the fluid diffusion member 13〇2 and the substrate 125〇. The presence of the warming fluid after the substrate 1250 will eventually warm the back side of the substrate 1 250. A uniform and elevated substrate temperature facilitates operation without electrical clocks. A plurality of heating strips 1112 can be embedded in the substrate member 1304 as needed and can be individually controlled as needed to more precisely control the temperature of the DI water flowing into the heat transfer region 1312, and thus control the substrate during processing 8 35 1355298 temperature. In particular, the individual control of the heating strip 1 11 2 allows for precise control of the substrate surface temperature, which is important for electroless plating processes.

如上述加熱配置的一替代例,附加之加熱線圈1112 可從基板1304移走,且安裝到擴散板1 3 02中。為容納此 重新設計,基板1304可變薄,同時增加擴散板13〇2的幾 何尺寸。隨著去離子水流經流體入口 1308’其會通過已加 之熱擴散板1302下方、通過流體通道1306,而後進入在 基材1 2 5 0背側及流體擴散構件1 3 〇2間之熱轉移區域1 3 1 2 内。此一替代配置顯示在第8B圊中。在此配置中,分離 的流體加熱器116 4可視需要予以移走。 基板1304及擴散構件1302可自一陶瓷材料(如完全壓 製之氮化鋁、礬土(ai2o3)、碳化矽(SiC))、一聚合物塗布 金屬(例如TeflonTM聚合物塗布鋁或不鏽鋼),一聚合物材 料或適於半導體流體處理的其他材料製造》較佳的聚合物 塗層或聚合物材料是氟化聚合物,譬如 Tefzel(ETFE)、As an alternative to the heating arrangement described above, the additional heating coil 1112 can be removed from the substrate 1304 and mounted into the diffuser plate 103. To accommodate this redesign, the substrate 1304 can be thinned while increasing the geometry of the diffuser plate 13〇2. As the deionized water flows through the fluid inlet 1308', it passes through the heated diffusion plate 1302, through the fluid passage 1306, and then into the heat transfer region between the back side of the substrate 1 250 and the fluid diffusion member 1 3 〇2. 1 3 1 2 inside. This alternative configuration is shown in Section 8B. In this configuration, the separate fluid heaters 116 4 can be removed as needed. The substrate 1304 and the diffusion member 1302 may be from a ceramic material (such as fully pressed aluminum nitride, alumina (ai2o3), tantalum carbide (SiC)), a polymer coated metal (such as TeflonTM polymer coated aluminum or stainless steel), Manufacture of polymeric materials or other materials suitable for semiconductor fluid processing. A preferred polymeric coating or polymeric material is a fluorinated polymer such as Tefzel (ETFE),

Halar(ECTFE)、PFA、PTFE、FEP,PVDF 等。Halar (ECTFE), PFA, PTFE, FEP, PVDF, etc.

補充說明的是流體通道1306可設置以將DI水導向基 材1 2 5 0之背側。在基材1 2 5 0背側上出現的水不僅使基材 1250加溫’且防止無電流體不符合需求地接觸基材1250 的背側。 複數個基材支撐指狀件1300大體上是定位在最接近 流體擴散構件1302的周邊。基材支撐指狀件1300係設置 以在流體擴散構件13 02上方一需求距離支撐基材1250, 以形成熱轉移區域1312。一機械臂葉片(未顯示)可送入基 36 1355298 材1250下方,且在複數個指狀件1300間,以昇舉及移動 基材1250。在一替代性組態中,一連續環(未顯示;而非 基材支撐指狀件1300)可用以支撐此基材。在此組態中, 一昇舉銷组件(未顯示)也可用以該自連續環昇舉該基材β 依此方式,機械臂葉片可再次存取基材1250底部,因此其 可運輸進出單元1〇1〇。流體處理單元1〇1〇更包括一狹縫 1108。狹縫界定一通過側壁1〇15形成的開口,以提供存取It is additionally noted that the fluid passage 1306 can be configured to direct DI water to the back side of the substrate 1 250. The water present on the back side of the substrate 1 250 not only warms the substrate 1250' and prevents the currentless body from contacting the back side of the substrate 1250 undesirably. A plurality of substrate support fingers 1300 are generally positioned proximate to the periphery of the fluid diffusion member 1302. The substrate support fingers 1300 are configured to support the substrate 1250 at a desired distance above the fluid diffusion member 1300 to form a heat transfer region 1312. A robotic arm blade (not shown) can be fed into the base 36 1355298 under the material 1250 and between the plurality of fingers 1300 to lift and move the substrate 1250. In an alternative configuration, a continuous loop (not shown; rather than substrate support fingers 1300) can be used to support the substrate. In this configuration, a one-lift pin assembly (not shown) can also be used to lift the substrate β from the continuous loop. In this manner, the robot blade can re-access the bottom of the substrate 1250 so that it can be transported into and out of the unit. 1〇1〇. The fluid processing unit 1〇1〇 further includes a slit 1108. The slit defines an opening formed by the side wall 1 〇 15 to provide access

一機械臂(未顯示)來傳遞基材1250至單元1〇1〇及自其棟 取》 在第8圖的單元1〇1〇中,基材支撑組件lug可選擇 性地轴向轉移,且藉由使用上軸承1〇54Α及下軸承ι〇54Β 繞基板支撐件1301旋轉。為此目的,首先會提供基材支撐 昇舉組件1060。基材支撐昇舉组件1060包括一基材支撐 組件馬達1 〇 6 2。在一配置中,基材支樓組件馬達1 〇 6 2是 旋轉導螺桿106 1的一精準馬達。馬達1062的旋轉運動轉 換成指狀滑件1 〇64的線性運動。指狀滑件1 〇64沿一具有 φ 溝槽之殼體1066跨接’以驅動該滑件上與下。在此例中, 馬達1062最好是由電致動。或者是,基材支撐組件馬達 1062可為一氣壓致動的空氣用汽缸。 基材支撐昇舉組件1060也包括一基材支撐指狀件馬 .達1〇52°該指狀件馬達1052旋轉基材支撐指狀件13〇〇及 被支撐的基材1 250。基材支撐指狀件13〇〇繞—藉由不轉 動的基板支撐件1301形成的軸轉動。基材支撐構件1299 的旋轉速度可根據施行中的特定製程(如,沉積、沖洗、乾 ⑧ 37 1355298 燥)改變。在沉積之情況下,該基材支#構件可適應以相當 速度(例如約5RPM及約150RPM間;取決於流趙的 動,以藉助於流體之慣性將流體散開而橫跨基材 1 2 5 0表面。在·; φ,、生 以相斜从由f洗之情況下,基材支掠構件1299可適應a mechanical arm (not shown) for transferring the substrate 1250 to the unit 1〇1〇 and from the building thereof. In the unit 1〇1〇 of FIG. 8, the substrate supporting assembly lug is selectively axially transferable, and The substrate support member 1301 is rotated by using the upper bearing 1〇54Α and the lower bearing 〇54. For this purpose, a substrate support lift assembly 1060 will first be provided. The substrate support lift assembly 1060 includes a substrate support assembly motor 1 〇 6 2 . In one configuration, the substrate subassembly assembly motor 1 〇 6 2 is a precision motor that rotates the lead screw 106 1 . The rotational motion of the motor 1062 is converted into a linear motion of the finger sliders 1 〇 64. The finger slider 1 〇 64 is bridged along a housing 1066 having a φ groove to drive the slider up and down. In this example, motor 1062 is preferably electrically actuated. Alternatively, the substrate support assembly motor 1062 can be a pneumatically actuated air cylinder. The substrate support lift assembly 1060 also includes a substrate support finger. The finger motor 1052 rotates the substrate support fingers 13 and the supported substrate 1 250. The substrate support fingers 13 are wound - rotated by a shaft formed by the non-rotating substrate support 1301. The rotational speed of the substrate support member 1299 can be varied depending on the particular process being performed (e.g., deposition, rinsing, dry 8 37 1355298 drying). In the case of deposition, the substrate support member can be adapted to be at a comparable speed (e.g., between about 5 RPM and about 150 RPM; depending on the flow, to spread the fluid across the substrate by means of the inertia of the fluid 1 2 5 0 surface. In the case of φ, sheng, the phase slanting from the f wash, the substrate plucking member 1299 can be adapted

中間之速度旋轉,例如在大約5RP 1 000RPM間。在耔換+法 ^ 'Ί m . „ $之情況T ’該基材支撐件可適應以相 轉譬如在約500RPM及約3000RPM間以旋 乾基材1 2 5 0。 一〜基板支料13()1係藉由基座構件1()13及μη安裝至 :基座或平台(未顯示)。因此,在該較佳具體實施例中, 構件13〇4不會由基材支撐昇舉組件^⑼轉移而是 作為一用於基材支擔扣业从The intermediate speed is rotated, for example between approximately 5 RP and 1 000 RPM. In the case of 耔 + method ^ 'Ί m . „ $ T The substrate support can be adapted to phase-translate, for example, between about 500 RPM and about 3000 RPM to spin dry the substrate 1 250. One substrate support 13 (1) is attached to the base or platform (not shown) by the base members 1 () 13 and μη. Therefore, in the preferred embodiment, the member 13〇4 is not supported by the substrate. The component ^(9) is transferred as a substrate for the buckle industry from

克撐心狀件1300之導引。上轴承1054A 及下軸承1054B係巧署L、,你lL 地 ^ ^ . ^ f叹置以使此支撐可行。基板支撐件〗301 也作為導官,用於電線 姑 啄(禾顯不出)及由—基材流體入口管 66饋人的人σ管13G8ef線及管會通過基座構件Μ” 之基板導管1305。 視圖VA圖呈現第8圖中的面朝上無電處理室之斷面側 :圖。在此圖中,基材昇舉组件1060係在其升高位置。基 Γ〇1 昇舉離開基板1304的表面,以允許在處理單元 〇的至溫處理’因為基材未由與流體容積⑶〇及基座 =漬接觸的流體加溫。此也是在機械臂進入以拾取一 理基材1250前,基材125〇典型將被置放的位置。 處理單元1010也包括—流體引入系統"Ο。。流體引 入系統測係操作以傳遞各種處理流體(如,溶液·、Guide to the heart support 1300. The upper bearing 1054A and the lower bearing 1054B are instructed by L, and you are sighed to make this support feasible. The substrate support member 301 is also used as a guide for the wire guide (the wire is not shown) and the substrate of the human σ tube 13G8ef fed by the substrate fluid inlet tube 66 and the tube through which the tube passes through the base member Μ" 1305. The view VA diagram presents the cross-sectional side of the face-up electroless processing chamber in Figure 8: Figure. In this figure, the substrate lift assembly 1060 is in its raised position. The base lifts off the substrate by 1 liter. The surface of 1304 is allowed to be treated at the temperature of the processing unit 因为 because the substrate is not warmed by the fluid in contact with the fluid volume (3) and the pedestal = stain. This is also before the robot enters to pick up a substrate 1250. The substrate 125 is typically placed where it is placed. The processing unit 1010 also includes a fluid introduction system ". The fluid introduction system operates to transfer various processing fluids (eg, solution,

38 135529838 1355298

溶液1 204及溶液1 206、惰性氣源1 2Ο7等)到基材1 2 5 0的 表面。可用於流體處理單元1〇1〇的處理流體數目將隨應用 而變化’並且在第8圖中所示可超過三個。一計量泵1208 係提供連接各溶液1202、1204'1206。此外,一分配閥1209 係設置用於控制將各溶液1202、1204、1206釋放到各自的 前級管線1210内。流體1202、1204、1206被選擇性地從 前級管線1210透過入口管1225引入單元1〇1〇中。大體上 如第8圖中所示’分配閥1 209可設置以當化學品從分配閥 1 2 09之製程流體來源上游傳遞後,沖洗前級管線1 2丨〇。 視需要可將一過濾器11 62併入在入口系統1 200中, 以防止在過濾器11 62上游產生的微粒污染流體處理單元 1010且最終污染基材1250。當在移動基材前需要沖洗入口 線1225時’或在製程步驟間’由於過濾器薄膜的大表面區 域,增加過濾器可能大幅地增加沖洗該等管線的時間,且 因此可不使用。 在本發明另一態樣中,可將一加熱器11 6 1併入引入系 統1200中,以在流體進入處理區域1〇25前將其加熱。在 此本發明中涵蓋的加熱器11 6 1可為能將能量賦予處理流 體的任何類型之元件。該加熱器1161較佳是.一具外套塑電 阻加熱器(如,加熱器透過入口管壁加熱流體)而非浸入型 加熱器(如’加熱器元件接觸該溶液)。結合一控制器1280 一起使用的加熱器1161,可用以確保進入流體處理單元 MlO的處理區域1025之處理流體係在需求的溫度。 在本發明的另一方面,加熱器1161是一微波功率來 ⑧ 39 且流過用以迅速賦予能量進到處理流鱧内的微波腔 源 ·· 具體實施例中,此微波功率來源係以2_54GHz在500 瓦至、 . 約2〇〇〇瓦之功率間運作。在一同轴微波腔加熱器中之 具趙眘 I施例中,係在各種溶液(如,清潔化學品、沖洗溶液 及後·、,杳、 • 潔溶液等)進入該處理單元前立即增加其溫度至最 佳位· 卡°在一具體實施例中,可使用兩分離的微波加熱器 選择性地加熱分離之流鱧管線。 % 在本發明的另一態樣中,一流體除氣單元1170係併入 在弓丨入备 系統12〇〇中,以在處理流鱧進入處理區域1〇25前 移走在Ή· 具内任何被捕捉或溶解的氣體。因為已溶解的氧傾 市J無電沉積反應、氧化已曝露的金屬表面且影響無 t清潔匍:is + '教程中的蚀刻速率’使用流體除氣單元有助於減少 w 由於 P、、六 、 >谷解氧氣出現在處理流體中造成的任何腐蝕及/或 • 製程變異性。一流體除氣單元大體上係定義為可自一溶液 抽取已溶解氣體之任何單元,例如,藉由使用一氣體可滲 透薄膜及一真空來源。一流體除氣單元可從美國麻薩諸塞 φ 州Billerica市的Mykr〇lis公司購得。 可在Λ體處理單元1〇1〇中發現的各該等個別組件及 其他卜部系統組件(时淪於下)較佳是與一製程控制器1 2 8 〇 連通,其可為-設置以從使用者及/或定位在該系統上的各 種感應器接收輸入的以微處理器為基礎之控制系統,且依 據該輸入適當地拍?由丨封 备地控制該至及外部系統的操作。控制器128〇 含有記憶體(未顯示)及一中央 丫天處理單TG(未顯示),其等由 控制器利用以保接久插Θ斗. . 保持各種程式、處理該等程式且當必要時執 40 丄力5298Solution 1 204 and solution 1 206, inert gas source 1 2Ο7, etc.) are applied to the surface of the substrate 1 250. The number of treatment fluids available for the fluid treatment unit 1〇1〇 will vary with the application' and may exceed three in the Figure 8. A metering pump 1208 is provided to connect the respective solutions 1202, 1204 '1206. In addition, a dispensing valve 1209 is provided for controlling the release of each of the solutions 1202, 1204, 1206 into the respective foreline 1210. Fluids 1202, 1204, 1206 are selectively introduced into unit 1〇1 from the forward line 1210 through inlet tube 1225. In general, as shown in Figure 8, the dispensing valve 1 209 can be configured to flush the foreline 1 2丨〇 after the chemical is transferred upstream from the process fluid source of the dispensing valve 128. A filter 11 62 can be incorporated into the inlet system 1 200 as needed to prevent particulates generated upstream of the filter 11 62 from contaminating the fluid treatment unit 1010 and ultimately contaminating the substrate 1250. When the inlet line 1225 needs to be flushed before moving the substrate 'or between process steps', the addition of filters may greatly increase the time to flush the lines due to the large surface area of the filter membrane, and thus may not be used. In another aspect of the invention, a heater 1161 can be incorporated into the introduction system 1200 to heat the fluid before it enters the processing zone 1〇25. The heater 161 covered in this invention may be any type of component that imparts energy to the process fluid. The heater 1161 is preferably a jacketed plastic resistor heater (e.g., the heater heats the fluid through the inlet tube wall) rather than an immersion heater (e.g., the heater element contacts the solution). The heater 1161 used in conjunction with a controller 1280 can be used to ensure that the process stream system entering the processing zone 1025 of the fluid processing unit M10 is at the desired temperature. In another aspect of the invention, the heater 1161 is a microwave power 8 39 and flows through a microwave cavity source for rapidly imparting energy into the process stream. In a specific embodiment, the microwave power source is 2_54 GHz. Operates between 500 watts to about 2 watts of power. In the case of Zhao Shen I in a coaxial microwave cavity heater, it is added immediately before entering the processing unit in various solutions (eg, cleaning chemicals, rinsing solutions, and after, 杳, • cleaning solutions, etc.). Its temperature to the optimum position. In one embodiment, the separate flow lines can be selectively heated using two separate microwave heaters. In another aspect of the invention, a fluid degassing unit 1170 is incorporated into the bowing system 12〇〇 to remove the processing stream before entering the processing area 1〇25. Any gas that is trapped or dissolved. Because the dissolved oxygen dumps the electroless deposition reaction, oxidizes the exposed metal surface and affects the cleanliness of the 匍:is + 'etch rate in the tutorial' using the fluid degassing unit helps to reduce w due to P, 6, > Oxygen in the presence of any corrosion and/or process variability in the treatment fluid. A fluid degassing unit is generally defined as any unit that extracts dissolved gases from a solution, for example, by using a gas permeable membrane and a vacuum source. A fluid degassing unit is commercially available from Mykr〇lis, Inc. of Billerica, Massachusetts. Each of the individual components and other component system components that may be found in the carcass processing unit 1〇1〇 is preferably in communication with a process controller 1 2 8 , which may be set to The user and/or various sensors positioned on the system receive the input microprocessor-based control system and take appropriate shots based on the input. The operation to the external system is controlled by the enclosure. The controller 128 includes a memory (not shown) and a central processing unit TG (not shown), which are used by the controller to secure the long-term plugging. Maintain various programs, process the programs, and when necessary When the time is 40 丄力5298

订該等程式。該記憶體係連接在中央處理單元上,且可為 —或多個備便可用的記憶體,例如隨機存取記憶趙 (Ram)、唯讀記憶體(R0M)、軟碟、硬碟、或任何其他形 式的數位儲存器(區域性或遠端)。軟體指令及資料可經编 瑪且儲存在用於命令中央處理單元之記憶體内。支援電路 (未顯示)也連接至中央處理單元,用於以習知方式支援該 處理器。支援電路可包括快取記憶體、電源供應器、時脈 電路、輪入/輪出電路、子系統及在該項技術中所有已知之 類似者。可由控制器1280讀取之程式(或電腦指令)決定哪 些工作可在該處理室中執行。較佳的是,該程式係可由控 制器1280讀取的軟體,且包括用以根據已界定的規則及輸 入資料監控及控制該無電製程。Book these programs. The memory system is coupled to the central processing unit and can be - or a plurality of ready-to-use memories, such as random access memory Ram, read only memory (ROM), floppy disk, hard disk, or any Other forms of digital storage (regional or remote). The software instructions and data can be encoded and stored in the memory used to command the central processing unit. A support circuit (not shown) is also coupled to the central processing unit for supporting the processor in a conventional manner. Support circuits may include cache memory, power supplies, clock circuits, wheeling/rounding circuits, subsystems, and all similarities known in the art. The program (or computer command) that can be read by controller 1280 determines which jobs can be performed in the processing chamber. Preferably, the program is software readable by the controller 1280 and includes means for monitoring and controlling the unpowered process based on defined rules and input data.

在第8、8A及8B圖的單元之具體實施例中,流體引 入系統1200透過一喷灑機構操作。更明確言之,處理流體 (如,流體 1202、1204、1206)係經由一流體傳送臂 14〇6 選擇性地傳遞到基材1 250的接收表面。複數個嘴嘴丨402 係沿流體傳遞臂1406形成。喷嘴1402接收來自入口管 1225之流體,且將處理流體導至基材1250的接收表面。 喷嘴1402可置於傳遞臂1406的一端,或沿著臂14〇6的長 度。在第8、8A及8B圖的配置中,一對喷嘴14〇2係置於 一等距間隔所分隔的配置中。 在第8圖的組態中,臂1406具有之長度使得一末端可 延伸過基材1250中央。最好該等喷嘴14 02中至少之一被 定位在流體傳遞臂1406的末端。同時,最好流體傳遞臂 41 1355298 1406可繞一分配臂馬達14〇4移動,其係適應以造成該臂 1406樞轉至基材1250中央且自其樞轉。在第8、8A及8B 圊中’流體傳遞臂1406框轉以回應臂馬達1404的移動。 臂馬達14 04最好是置於防護構件1410後,以部分隔離臂 馬達1404與室處理區域1〇25。In a specific embodiment of the unit of Figures 8, 8A and 8B, fluid introduction system 1200 operates through a spray mechanism. More specifically, the processing fluid (e.g., fluids 1202, 1204, 1206) is selectively transferred to the receiving surface of substrate 1 250 via a fluid transfer arm 14〇6. A plurality of nozzles 402 are formed along the fluid transfer arm 1406. Nozzle 1402 receives fluid from inlet tube 1225 and directs the treatment fluid to the receiving surface of substrate 1250. Nozzle 1402 can be placed at one end of transfer arm 1406, or along the length of arm 14〇6. In the configuration of Figures 8, 8A and 8B, a pair of nozzles 14A are placed in an equally spaced configuration. In the configuration of Figure 8, the arm 1406 has a length such that one end can extend through the center of the substrate 1250. Preferably at least one of the nozzles 142 is positioned at the end of the fluid transfer arm 1406. At the same time, preferably, the fluid transfer arm 41 1355298 1406 is movable about a dispensing arm motor 14A4 that is adapted to cause the arm 1406 to pivot to and from the center of the substrate 1250. In the eighth, eighth and eighth embodiments, the fluid transfer arm 1406 is framed in response to movement of the arm motor 1404. Arm motor 14 04 is preferably placed behind guard member 1410 to partially isolate arm motor 1404 from chamber processing region 1〇25.

在一具體實施例中,流體傳遞臂1406係適應以不僅樞 轉,且也轴向運動。第8B圖以一替代性具體實施例.呈現 第8圖的面朝上無電處理室之斷面側視圖。在此,梅轉臂 1404係連接至一抽向馬達1〇8〇上(如,線性馬達)。臂1406 在轴向的運動允許臂1406視需要選擇性地移近基材1250。In one embodiment, the fluid transfer arm 1406 is adapted to not only pivot but also move axially. Figure 8B is a cross-sectional side view of the face-up, electroless processing chamber of Figure 8 in an alternative embodiment. Here, the plum boom 1404 is coupled to a pumping motor 1〇8〇 (e.g., a linear motor). Movement of the arm 1406 in the axial direction allows the arm 1406 to selectively move closer to the substrate 1250 as desired.

第9圖顯示第8圖的面朝上無電處理室之俯視圖。在 此,可見到流體引入系統1200的流體傳遞臂1406與一已 安裝的基材1250有關》四個示範性支撐指狀件1300係顯 示支撐基材1250。在此圖中臂1406係旋轉離開基材1250。 此位置允許使用昇舉銷或一基材再舉組件(譬如上述组件 1060)昇舉基材1250。然而,箭頭1004指出一用於臂1406 的旋轉運動路徑,其示範臂1406可在處理期間轉動喷嘴 14〇2到基材1250上方。傳遞臂1406在基材1250上的運 動增進了基材1250的流體覆蓋率。較佳的是,在自噴嘴 1402分配流體的期間,該基材支撐構件會轉動,以增加流 體分布均勻性及該系統的產量。 在另一具體實施例中,處理流體係透過一或多個置於 最接近基材旋轉軸的喷嘴傳遞。同時,承載氣體(例如氮或 氬氣)係透過喷嘴沿基材的外緣傳遞。在流體傳遞操作期 42 1355298 間,基材最好能旋轉。圍燒基材1250邊緣注入的承載氣體 在處理區域1025四周形成氣趙毯覆。氣體毯覆取代可能在 處理區域内徘掏的任何殘餘氧氣。熟習無電;儿積處理技術 的人士應瞭解氧氣對於某些製程步驟(例如化學活化步驟) 有不利的影響。Fig. 9 is a plan view showing the face-up electroless processing chamber of Fig. 8. Here, it can be seen that the fluid transfer arm 1406 of the fluid introduction system 1200 is associated with an installed substrate 1250. Four exemplary support fingers 1300 are shown to support the substrate 1250. In this figure, arm 1406 is rotated away from substrate 1250. This position allows the substrate 1250 to be lifted using a lift pin or a substrate re-assembly assembly (e.g., assembly 1060 described above). However, arrow 1004 indicates a rotational path for arm 1406 whose exemplary arm 1406 can rotate nozzle 14〇2 over substrate 1250 during processing. Movement of the transfer arm 1406 over the substrate 1250 enhances fluid coverage of the substrate 1250. Preferably, the substrate support member rotates during dispensing of fluid from the nozzle 1402 to increase fluid distribution uniformity and throughput of the system. In another embodiment, the process stream system is delivered through one or more nozzles disposed closest to the axis of rotation of the substrate. At the same time, a carrier gas (e.g., nitrogen or argon) is transmitted through the nozzle along the outer edge of the substrate. The substrate is preferably rotatable during the fluid transfer operation period 42 1355298. The carrier gas injected at the edge of the fire-extinguishing substrate 1250 forms a gas blanket around the treated region 1025. The gas blanket replaces any residual oxygen that may be trapped in the treated area. Those who are familiar with electricity; those skilled in the art of processing should understand that oxygen has an adverse effect on certain process steps, such as chemical activation steps.

在一具體實施例中,喷嘴140 2是超音速喷灑器喷嘴, 或是「空氣霧化喷嘴」。第12圖顯示在一設計中之空.氣霧 化喷嘴1402的斷面圖。此係一内部流體混合型噴嘴。此意 味著流體係在内部混合以產生一完全霧化的喷灑、或處理 流體的薄霧。在此組態t,該承載氣體(如氬氣)含有處理 氣體之小滴。在一具體實施例中,可用惰性氣體傳送霧化 的活化溶液到基材表面。或者是,可使用惰性氣體以傳送 霧化的無電沉積溶液到基材1 2 5 0。 在第12圖中的喷嘴設計1402中,喷嘴1402包括1本 體1426及一尖端1424。尖端1424之直徑大體上是^ 10 微米至約200微米。在一具體實施例中,尖端1424之直徑 是約10微米至約50微米。由於當高壓氣體從喷嘴氣體供 應器1244傳遞時引起的文氏管效應所產生的吸力,流體會 透過尖端14 24傳遞《在第12圖的配置中,本體142 6提供 分離的通道 1422、1420,用於分別接收分離的液體及氣 流。液體142 2及氣體142 0通道在尖端142 4合併,允許二 股流動混合。此可稱為「同心文氏管設計J。在此配置中, 從噴嘴1 402分布的流體係預先混合以產生完全霧化的噴 灑。第12圖中之特定尖端設計142 4產生圓形喷灑模式。 1355298 然而,應瞭解可用其他尖端組態以產生其他喷灑模式,譬 如扁平或扇狀喷灑模式。In one embodiment, the nozzle 140 2 is a supersonic sprinkler nozzle or an "air atomizing nozzle." Figure 12 shows a cross-sectional view of the air-atomizing nozzle 1402 in a design. This is an internal fluid mixing nozzle. This means that the flow system mixes internally to create a completely atomized spray, or a mist that treats the fluid. In this configuration t, the carrier gas (such as argon) contains droplets of the treatment gas. In a specific embodiment, the atomized activation solution can be delivered to the surface of the substrate with an inert gas. Alternatively, an inert gas may be used to deliver the atomized electroless deposition solution to the substrate 1 250. In the nozzle design 1402 of Fig. 12, the nozzle 1402 includes a body 1426 and a tip end 1424. The diameter of the tip 1424 is generally from about 10 microns to about 200 microns. In one embodiment, the tip 1424 has a diameter of from about 10 microns to about 50 microns. Due to the suction generated by the venturi effect caused by the high pressure gas as it passes from the nozzle gas supply 1244, the fluid passes through the tip 14 24. In the configuration of Fig. 12, the body 142 6 provides separate channels 1422, 1420, Used to receive separate liquids and gas streams, respectively. The liquid 142 2 and gas 142 0 channels merge at the tip 142 4 to allow for two flow mixing. This may be referred to as "concentric venturi design J. In this configuration, the flow system distributed from nozzle 1 402 is premixed to produce a fully atomized spray. The specific tip design 142 4 of Figure 12 produces a circular spray. Mode 1355298 However, it should be understood that other tip configurations may be used to create other spray patterns, such as flat or fan spray patterns.

第13圖提供不同設計中的一空氣霧化噴嘴14 02的斷 面圖。此係一外部流體混合喷嘴。在第 13圖的喷嘴設計 1402中,喷嘴1402再次包括一本體1426及一尖端1424。 尖端1424之直徑大體上再次是約10微米至約200微米, 或在另一具體實施例中,直徑約1 0微米至約5 0微米.。在 第13圖的配置中,本體1426再次提供分離的通道1422、 1420,用於接收到分離的液體及氣體流。然而在此配置中, 液體通道14 22透過喷嘴14 02傳遞液體而與氣體通道1420 獨立,因此二股流動不在本體 1 4 2 6内混合,而是在喷嘴 1 424外部混合。其可稱為一「平行文氏管設計」。此配置 具有之優勢在於可獨立地控制氣體及液體流動,此對於較 高黏性之液體及研磨用懸浮物較有效。此與内部混合型喷 嘴1402相反,在其中氣體流動的改變會影響液體的流動。 使用譬如第12及13圖喷嘴的超音速喷嘴,直接在基 材接收表面產生霧化的薄霧。薄霧之導入(與液體流相 反),其功能係節省昂貴的無電處理流體。其也在橫跨接收 表面上提供更均勻的覆蓋。同時,一流體動態邊界層(此係 當基材1250藉由使用基材支撐指狀件馬達1052旋轉時產 生),能改進在基材1250表面上之霧化處理流體的分布, 因為一在旋轉碟表面上之邊界層形狀大體上是扁平或與任 何方向之基材表面平行。藉由霧化處理流體所見的邊界層 效應可為一優於習知喷灑設計之優勢,其造成一股流體撞 ⑧Figure 13 provides a cross-sectional view of an air atomizing nozzle 142 in a different design. This is an external fluid mixing nozzle. In the nozzle design 1402 of Figure 13, the nozzle 1402 again includes a body 1426 and a tip end 1424. The diameter of the tip 1424 is again substantially from about 10 microns to about 200 microns, or in another embodiment, from about 10 microns to about 50 microns in diameter. In the configuration of Figure 13, body 1426 again provides separate channels 1422, 1420 for receiving separate liquid and gas streams. In this configuration, however, the liquid passages 14 22 pass liquid through the nozzles 142 to be independent of the gas passages 1420, so the two streams are not mixed in the body 1 4 2 6 but are mixed outside the nozzles 1 424. It can be called a "parallel venturi design". This configuration has the advantage of independently controlling gas and liquid flow, which is effective for higher viscosity liquids and abrasive suspensions. This is in contrast to the internal mixing type nozzle 1402, in which a change in gas flow affects the flow of the liquid. Using a supersonic nozzle such as the nozzles of Figures 12 and 13, produces an atomized mist directly on the substrate receiving surface. The introduction of mist (as opposed to liquid flow) is a function of saving expensive electroless treatment fluids. It also provides a more uniform coverage across the receiving surface. At the same time, a fluid dynamic boundary layer (which is produced when the substrate 1250 is rotated by the use of the substrate supporting finger motor 1052) can improve the distribution of the atomized treatment fluid on the surface of the substrate 1250 because one is rotating The shape of the boundary layer on the surface of the dish is substantially flat or parallel to the surface of the substrate in any direction. The boundary layer effect seen by atomizing the treatment fluid can be an advantage over conventional spray designs, which cause a fluid collision 8

1355298 擊基材表面,因為由一或多個喷嘴產生的任何非均勻 模式,可藉由邊界層控制霧化流體到基材表面的傳送 到最少。 一流體供應器係設置用於傳遞至喷嘴1402的流彳 第12及13圖中顯示一箱體1212。箱體1212包括流 口 1218及通風孔1214。通風孔1214係與大氣壓力以 連通。此外設置一流體出口 1 2 1 6。在流體傳遞期間, 來源1244的氣體以高速傳遞到喷嘴1402。由於透過孔 與大氣壓力連通,此會在流體管線1422產生一相對| 流體接著被驅使通過出口 1216且進入喷嘴1402内。 在一具體實施例中,該處理流體是一活化溶液。 溶液的實例包括叙鹽,其包括氣化物、溴化物、氟化 氟酸鹽、碘化物、硝酸鹽、硫酸鹽、羰基金屬化合物 屬酸的鹽類及其組合物。在一具體實施例中,該鈀鹽 化物,例如氯化鈀(PdCh)。在另一具體實施例中,該 是硝酸鹽、烷基磺酸鹽,或其他含有非耦合陰離子之 的可溶衍生物,其不傾向於在溶液中或金屬表面上形 串。在一具體實施例中,介於當施加銅清潔溶液之矣 及當施加活化溶液之開始二者間的佇候時間(或等待 大體上是少於約1 5秒,且較佳是少於約5秒。該活化 大體上係操作以沉積一已活化金屬晶種層到該已曝光 的露出銅上。在清潔後該銅層露出部分的氧化對後續 步驟不利,因為銅氧化已知具有比銅更高的電阻。銅 及活化間的短佇候時間使氧化減到最少,同時使用圍 噴灑 而減 證。在 體入 流體 .來自 1214 i壓。 活化 丨物、 、金 是氣 纪鹽 Pd + 2 成鎮 束, 時間) 、溶液 ,特徵 製程 清潔 繞流 45 1355298 體處理單元的承載氣體環境也有助於防止鋼層露出部分氧 化,如以上描述。 在一具趙實施例中,該處理流體是一無電沉積溶液。 在一具體實施例中,會沉積一無電沉積覆蓋層,其係一含 有 CoP、CoWP、CoB、CoWB、CoWPB、NiB 或 NiWB 的 合金’且較佳是包括C〇wp或CoWPB。用以形成覆蓋層的 無電沉積溶液可包括一或多種金屬鹽及一或多種還原劑1355298 Strikes the surface of the substrate, which minimizes the transfer of atomized fluid to the substrate surface by the boundary layer because of any non-uniform pattern created by one or more nozzles. A fluid supply is provided for the flow to the nozzle 1402. A box 1212 is shown in Figures 12 and 13. The housing 1212 includes a flow port 1218 and a venting opening 1214. Vents 1214 are in communication with atmospheric pressure. In addition, a fluid outlet 1 2 1 6 is provided. The gas from source 1244 is delivered to nozzle 1402 at high speed during fluid transfer. As the through hole is in communication with atmospheric pressure, this creates a relative flow in fluid line 1422 which is then driven through outlet 1216 and into nozzle 1402. In a specific embodiment, the treatment fluid is an activation solution. Examples of the solution include a salt, which includes a vapor, a bromide, a fluorinated fluoride, an iodide, a nitrate, a sulfate, a salt of a metal carbonyl compound, and a combination thereof. In a specific embodiment, the palladium salt compound, such as palladium chloride (PdCh). In another embodiment, the nitrate, alkyl sulfonate, or other soluble derivative containing a non-coupled anion does not tend to form a string in solution or on a metal surface. In one embodiment, the time between the application of the copper cleaning solution and the beginning of the application of the activation solution (or wait for substantially less than about 15 seconds, and preferably less than about 5 seconds. The activation is generally performed to deposit an activated metal seed layer onto the exposed exposed copper. The oxidation of the exposed portion of the copper layer after cleaning is detrimental to the subsequent step because copper oxidation is known to have a copper ratio Higher resistance. The short waiting time between copper and activation minimizes oxidation, while using the spray to reduce the evidence. In the body fluid. From 1214 i pressure. Activated sputum, gold is the gas salt Pd + 2 into the town bundle, time), solution, characteristic process cleaning around the flow 45 1355298 The carrier gas environment of the body treatment unit also helps to prevent partial oxidation of the steel layer, as described above. In a Zhao embodiment, the treatment fluid is an electroless deposition solution. In one embodiment, an electroless deposition cap layer is deposited which is an alloy containing CoP, CoWP, CoB, CoWB, CoWPB, NiB or NiWB' and preferably comprises C〇wp or CoWPB. The electroless deposition solution used to form the cover layer may include one or more metal salts and one or more reducing agents

取決於待沉積之覆蓋層材料。無電沉積溶液也可包括pH 值調整劑,大體上譬如此項技術中為人已知之酸或鹼。當 已選定之覆蓋層含有鈷時,無電沉積溶液大體上包括鈷 鹽。鈷鹽的實例包括氯化物、漠化物、氟化物、醋酸鹽、Depends on the cover material to be deposited. The electroless deposition solution may also include a pH adjusting agent, generally an acid or a base known in the art. When the selected cover layer contains cobalt, the electroless deposition solution generally comprises a cobalt salt. Examples of cobalt salts include chlorides, deserts, fluorides, acetates,

氟酸鹽、碘化物、硝酸鹽、硫酸 及/或其等之組合物。較佳的是 該無電溶液大體上包括鎳鹽。 化物、氟化物、醋酸鹽、氟酸 建 '幾基金屬化合物、強或弱 物。 包括磷(譬如CoP、CoWP或 包括填化合物,例如次磷酸鹽 料包括硼(譬如CoB、CoWB、 括蝴化合物、二甲基銨硼氫化 或其等之組合物。如果要沉積 溶液包括鎢酸鹽。較佳的是, 譬如鎢酸銨或四曱基鎢酸錄, 如果要沉積含錄覆蓋材料 鎳鹽的實例包括氣化物、填 鹽、峨化物、确酸鹽、硫酸_ 酸的鹽類、及/或其等之組合 當已選定的覆蓋層材料 CoWPB)時,該還原劑較佳是 陰離子(H2P〇2)。如果覆蓋持 CoWPB),該還原劑大體上包 鹽、其他強或弱酸之鹽類、 ,姑鹽包括硫酸鈷、氣化鈷 含鎢覆蓋材料,該無電沉積 該鎢酸鹽包括鎢酸之鹽類, 或可透過鎢酸的中和產生。 46 1355298 合物(DMAB)、硼氫化物陰離子(BH4·)之非鹼金屬鹽、或其 等之組合物。除上述還原劑外,也可使用其他還原劑以予 取代,譬如聯氨。纟-具體實施例中,—硼氫化合物共還 原劑係用於在銅上起始的製程。 如上述,可將無電沉積溶液(處理流體)及/或基材加熱 到一溫度。範例性溫度係在約攝氏4〇度及攝氏95度間。 在一態樣中,加熱無電沉積溶液及/或基材結構會增加無電 >儿積速率。此有助於補償當該處理流體離開喷嘴H〇2時經 歷的溫度降。在一具體實施例_,覆蓋材料的沉積速率是 大約100埃(A)/分或更多。在一具體實施例中,覆蓋材料 係/儿積至大約1 00埃及3 〇〇埃間之厚度較佳是約i 5 〇埃 至約200埃。然而,需求將橫跨基材的溫度維持在一均勻 級度因為已知無電製程的沉積速率是取決於溫度。因此, 可使用第8圖中所示基板構件1304的加熱線圈1112及/ 或加熱器1164。 處理單兀1 1010也包括流體出口系統1240。流體出口 系統1240大體上含有連接在流體排水器丨249之出口管線 1227。視需要’可置放超過一出口管線in?圍繞單元 WlO,以更均勻的抽取流體通過單元1〇1〇。在第9圖中, 可看到设置四個大體上等距分布的出口 1227。多個出口 1227可接到一單—排出增壓室及流體排水器ι 249。流體排 水器1249依次傳遞該室流出物至廢棄物收集排水器(未顯 不)°總之’處理流體大體上會流經入口管1225,接著通 過流體傳遞臂1406、通過喷嘴14〇2、然後向外通過處理區 47 1355298 域1025朝向基材支撐指狀件ι3〇〇,且接著離開一或多個 流體排水器1227。化學品將在處理區域1〇25中接觸且處 理基材1 250的接收表面。 流體出口系統1240包括氣體排放裝置。排放管1246 延伸通過壁1015。排放系統1248將氣體拉離開處理區域 1025。在一具體實施例中,此排放入口 1246是一環狀/增 壓室,其係在基材1250表面下均勻地抽進氣體,以改.進基 材1250表面附近之氣體流動。A composition of a fluorate, an iodide, a nitrate, a sulfuric acid, and/or the like. Preferably, the electroless solution comprises substantially a nickel salt. Compounds, fluorides, acetates, hydrofluoric acids, 'several metal compounds, strong or weak. Including phosphorus (such as CoP, CoWP or including a filling compound, such as a hypophosphite material including boron (such as CoB, CoWB, a butterfly compound, dimethylammonium borohydride or the like). If the solution to be deposited includes tungstate Preferably, for example, ammonium tungstate or tetradecyl tungstic acid is recorded, and examples of the nickel salt to be deposited include a vapor, a salt, a telluride, a sulphate, a sulphuric acid salt, And/or combinations thereof, when the selected cover material CoWPB) is selected, the reducing agent is preferably an anion (H2P〇2). If covered with CoWPB), the reducing agent is substantially salt-coated, other strong or weak acid The salt, the abundance salt comprises cobalt sulfate, a cobalt-containing cobalt-containing tungsten covering material, and the electroless deposition of the tungstate includes a salt of tungstic acid, or can be produced by neutralization of tungstic acid. 46 1355298 Compound (DMAB), a non-alkali metal salt of a borohydride anion (BH4.), or a combination thereof. In addition to the above reducing agents, other reducing agents may be used, such as hydrazine. In a particular embodiment, the borohydride co-reducing agent is used in a process initiated on copper. As described above, the electroless deposition solution (treatment fluid) and/or the substrate can be heated to a temperature. Exemplary temperatures are between about 4 degrees Celsius and 95 degrees Celsius. In one aspect, heating the electroless deposition solution and/or the substrate structure increases the rate of no electricity. This helps to compensate for the temperature drop experienced as the process fluid exits nozzle H2. In a specific embodiment, the deposition rate of the cover material is about 100 angstroms (A) per minute or more. In one embodiment, the thickness of the covering material/supplied to about 100 angstroms and 3 angstroms is preferably from about i 5 angstroms to about 200 angstroms. However, the demand maintains the temperature across the substrate at a uniform level because the deposition rate of known electroless processes is temperature dependent. Therefore, the heating coil 1112 and/or the heater 1164 of the substrate member 1304 shown in Fig. 8 can be used. Processing unit 1 1010 also includes a fluid outlet system 1240. Fluid outlet system 1240 generally includes an outlet line 1227 that is coupled to fluid drain 丨249. Depending on the need, more than one outlet line in? can be placed around unit W10 to more evenly draw fluid through unit 1〇1〇. In Figure 9, it can be seen that four generally equally spaced outlets 1227 are provided. A plurality of outlets 1227 can be connected to a single discharge plenum and fluid drain ι 249. The fluid drain 1249 sequentially transfers the chamber effluent to the waste collection drain (not shown). In general, the process fluid will generally flow through the inlet tube 1225, then through the fluid transfer arm 1406, through the nozzle 14 〇 2, and then The outer pass treatment zone 47 1355298 field 1025 faces the substrate support fingers ι3 〇〇 and then exits one or more fluid drains 1227. The chemical will contact and treat the receiving surface of substrate 1 250 in processing zone 1〇25. Fluid outlet system 1240 includes a gas discharge device. Discharge tube 1246 extends through wall 1015. The exhaust system 1248 pulls the gas away from the treatment zone 1025. In one embodiment, the venting inlet 1246 is an annular/pressure-increasing chamber that draws gas uniformly under the surface of the substrate 1250 to modify the flow of gas adjacent the surface of the substrate 1250.

第10圖以一替代性具體實施例提供一面朝上無電處 理單元1 0 1 0的斷面側視圖。流體引入系統1 2 0 0再次提供 用於將流體傳遞到基材1250的接收表面。處理流體係再次 通過一或多個噴嘴1 402傳遞。然而,在此具體實施例中’ 喷嘴1402係置於在室蓋組件1033内的一氣體傳遞多孔板 1030 中。Figure 10 provides a cross-sectional side view of an upwardly non-electrical processing unit 1010 in an alternative embodiment. The fluid introduction system 1 200 again provides a receiving surface for delivering fluid to the substrate 1250. The process stream system is again passed through one or more nozzles 1 402. However, in this particular embodiment, the nozzle 1402 is placed in a gas transfer perforated plate 1030 within the chamber lid assembly 1033.

室蓋組件1 033首先包括一氣體傳遞多孔板1〇3〇。較 佳的是,氣體傳遞多孔板1030是一多孔板,其允許空氣在 其内移動通過。用於多孔板的範例性材料包括陶瓷材料 (如,礬土)、聚乙烯(PE)及聚丙烯(PVDF),其形成有製造 於其中以允許流體連通之氣孔或洞。在一具體實施例中’ 可使用一 HEPA過濾器(「高效率微粒空氣過濾器」)配置。 HEPA過濾器利用捲成纸狀材料的玻璃纖維。第10圖中的 氣體傳遞多孔板1030係由一上支撐環1〇31支撐。 其次,室蓋組件1 03 3大體上包括一蓋1〇32、一氣體 傳遞多孔板1030、一上支撐環1031、及密封件1036及 48 1355298 1037。蓋1032在蓋組件1033及氣體傳遞多孔板1030間的 容積中形成一增壓室1034。在第10圖的配置中,蓋1032 係由氣體傳遞多孔板1030及上支撐環1031二者支撐。流 體入口管1225延伸通過蓋1032,然後分歧到多孔板1030 中的一或多個喷嘴1402。The chamber cover assembly 1 033 first includes a gas transfer perforated plate 1〇3〇. Preferably, the gas transfer perforated plate 1030 is a perforated plate that allows air to move therethrough. Exemplary materials for the multiwell plate include ceramic materials (e.g., alumina), polyethylene (PE), and polypropylene (PVDF) formed with pores or holes formed therein to allow fluid communication. In a specific embodiment, a HEPA filter ("High Efficiency Particulate Air Filter") can be used. HEPA filters utilize glass fibers that are rolled into a paper-like material. The gas transfer perforated plate 1030 in Fig. 10 is supported by an upper support ring 1〇31. Next, the chamber cover assembly 103 3 generally includes a cover 1 32, a gas transfer perforated plate 1030, an upper support ring 1031, and seals 1036 and 48 1355298 1037. The cover 1032 defines a plenum chamber 1034 in the volume between the cap assembly 1033 and the gas transfer perforated plate 1030. In the configuration of Fig. 10, the cover 1032 is supported by both the gas transfer perforated plate 1030 and the upper support ring 1031. Fluid inlet tube 1225 extends through cover 1032 and then branches to one or more nozzles 1402 in perforated plate 1030.

第 10圖中的流體處理單元1010顯示一氣體管線 1040。氣體管線1 040從一氣體供應器1 03 8提供一流動路 徑且進到室蓋增壓室1034中。閥1 03 5選擇性地開啟及關 閉與管線1 040的流體連通。在一態樣中,氣體供應器1 03 8 在處理區域12 99内提供氧氣。氧氣在一些製程中係可接 受。例如,在活化步驟期間可加入氧氣。較佳的是,一承 載氣體在一需求組合中是與氫及氧氣組合,且傳遞到增壓 室1 034内。在一具體實施例中,氣體供應器1 038供應惰 性氣體,譬如氬、氮、氦氣或其等之組合物。Fluid processing unit 1010 in Figure 10 shows a gas line 1040. Gas line 1 040 provides a flow path from a gas supply 108 8 and into chamber lid plenum 1034. Valve 1300 selectively opens and closes fluid communication with line 1 040. In one aspect, the gas supply 108 8 provides oxygen within the processing zone 1299. Oxygen is acceptable in some processes. For example, oxygen can be added during the activation step. Preferably, a carrier gas is combined with hydrogen and oxygen in a desired combination and passed to plenum 1 034. In one embodiment, gas supply 1 038 supplies an inert gas such as a combination of argon, nitrogen, helium or the like.

增壓室1034及氣體傳遞多孔板 1030係定位在晶圓 1 2 5 0上方,以允許承載氣體經由層流傳遞至晶圓1 2 5 0上 方。氣體層流在晶圓1 2 5 0上產生一均勻及垂直氣流。依此 方法,會沿晶圓1 2 5 0的半徑提供一均勻邊界層。其最終允 許一橫跨晶圓半徑之更均勻熱損失,且作為減少晶圓上方 及其上之水及化學蒸汽的凝結。 在一具體實施例中,一加熱元件(未顯示)係置放在最 接近增壓室1 0 3 4之蓋組件1 03 3中。例如,加熱線圈(未顯 示)可置於傳遞多孔板 1030内。此提供用於加熱自管線 1 040傳遞的氣體,其最終使晶圓1 250上凝結及小滴的形 ⑧ 1355298 成減到最少。 氣體從管線1040流入增壓室ι〇34 ,且然後貫穿多孔 * 板1〇3〇。多孔板1〇3〇作用為一氣體流動擴散器。氣體接 - 著流下橫越基材1250之接收表面用於處理。流經多孔板 1〇3〇的氣體可因此協助導引及均勻的分布自噴嘴1402流 ,到基材1250接收表面的處理流體薄霧。最後,氣體藉由排 _ 放系統1248透過排放入口 1246排放。排放系統ι248大體 上可含有一排放風扇或真空泵,以從流體處理單元1〇1〇 ® 抽取氣體。應注意到該排出入口 1246有助於確保通過基材 1250的氣流係層流。 在一具體實施例中,氣體管線1 〇4〇係連接在引入系統 1200,以允許液體(如,處理流體)而非氣體被推過多孔板 1030。依此方法,多孔板1〇3〇將作為類似淋浴頭,以將處 理流體傳遞到基材1250表面。The plenum 1034 and the gas transfer perforated plate 1030 are positioned above the wafer 1 250 to allow carrier gas to be transferred via laminar flow above the wafer 1 250. The gas laminar flow produces a uniform and vertical flow of gas over the wafer 1 250. In this way, a uniform boundary layer is provided along the radius of the wafer 1 250. It ultimately allows for a more uniform heat loss across the radius of the wafer and serves to reduce condensation of water and chemical vapors above and above the wafer. In one embodiment, a heating element (not shown) is placed in the lid assembly 103 3 that is closest to the plenum chamber 103. For example, a heating coil (not shown) can be placed within the transfer perforated plate 1030. This provides for heating the gas delivered from line 1 040, which ultimately minimizes the condensation on the wafer 1 250 and the shape of the droplets. Gas flows from line 1040 into booster chamber ι 34 and then through the porous plate 1〇3〇. The perforated plate acts as a gas flow diffuser. The gas is connected to the receiving surface that traverses the substrate 1250 for processing. The gas flowing through the perforated plate 1 〇 3 可 can thus assist in guiding and evenly distributing the flow from the nozzle 1402 to the substrate 1250 receiving surface mist of the treatment fluid. Finally, the gas is discharged through the discharge inlet 1246 by the discharge system 1248. The exhaust system ι248 may generally contain a discharge fan or vacuum pump to extract gas from the fluid processing unit 1〇1〇®. It should be noted that the venting inlet 1246 helps to ensure laminar flow through the substrate 1250. In one embodiment, the gas line 1 is coupled to the introduction system 1200 to allow liquid (e.g., process fluid) rather than gas to be pushed through the perforated plate 1030. In this way, the perforated plate 1 will be used as a shower head to transfer the treatment fluid to the surface of the substrate 1250.

氣體管線1040可不僅作為一流體傳遞管線,而且可作 為真空管線。真空來源1039提供用以防止與多孔板1〇3〇 相連的任何流體正好在轉移基材1250離開單元1010前滴 下。在此態樣中’該真空來源1039(如一真空文氏管 (vacuum venturi))被致動以產生室蓋增壓室 1034 中的真 空。此真空最後造成在多孔板1030之下表面上的任何流體 被「吸回」進到增壓室1 0 3 4内。 第10A圖顯示第10圖的面朝上無電處理室之斷面側 視圖。在此圖中,一氣體分流器1102係設置在單元1〇1〇 中。氣體分流器1102藉由使用一外部氣體分流器昇舉機構Gas line 1040 can function not only as a fluid transfer line, but also as a vacuum line. Vacuum source 1039 is provided to prevent any fluid associated with the perforated plate 1〇3 from dripping just before the transfer substrate 1250 exits the unit 1010. In this aspect, the vacuum source 1039 (e.g., a vacuum venturi) is actuated to create a vacuum in the chamber plenum 1034. This vacuum eventually causes any fluid on the lower surface of the perforated plate 1030 to be "sucked back" into the plenum chamber 103. Fig. 10A is a cross-sectional side view showing the face-up electroless treatment chamber of Fig. 10. In this figure, a gas splitter 1102 is disposed in unit 1〇1〇. Gas splitter 1102 by using an external gas splitter lift mechanism

50 1355298 (未顯示)選擇性地升高及降低。在此圖中,氣體分流器1102 係在其已降低位置。第1〇A圖示範當基材1250被轉移進 * 出流體處理單元1010時,該氣體分流器1102的位置。 - 第10B圊顯示第10圖的面朝上無電處理室之另一穿 斷面圊。在此,該氣體分流器係在其升高位置甲。在此位 -置中’當其在處理期間自喷嘴1402通過且朝向基材1250 - 時’氣體分流器1 102係用以「準直(straighten) J該薄霧的 流動。 # 需求提供構件以視覺檢查被分配至基材1 250上之流 體前進到單元1 0 1 0外部。在第1 〇圖的配置中,一照相機 1 3 6 0係設置在單元1 0 1 0内。該照相機可置放於沿著壁 1015、在氣體傳遞多孔板1〇30下、沿上支撐環1〇31或任 何可能需要充分目視基材1250之其他地方。較佳的是,照 相機1360係置於該蓋的一靜止部分。在第1〇圖的具體實 施例中’照相機1 3 6 0係固設至一上支撐環1 〇 3 1。 為有助於照相機1360之操作,需求提供光源(未顯 示)。該光源較佳是也置於該蓋的一靜止部分上;然而,其 Φ 讦被置於鄰近處理區域I025之任何位置。該光源用於在處 理期間照明基材1250 °50 1355298 (not shown) selectively raised and lowered. In this figure, the gas splitter 1102 is in its lowered position. Figure 1A illustrates the location of the gas splitter 1102 as it is transferred into the fluid handling unit 1010. - Figure 10B shows another cross-section of the face-up electroless treatment chamber of Figure 10. Here, the gas splitter is in its raised position A. In this position, the gas splitter 1 102 is used to "straighten" the flow of the mist as it passes from the nozzle 1402 and toward the substrate 1250 during processing. Visual inspection of the fluid dispensed onto substrate 1 250 proceeds to the exterior of unit 1 0 1 0. In the configuration of Figure 1, a camera 1 3 6 0 is placed within unit 1 0 1 0. The camera can be placed Placed along wall 1015, under gas-transporting perforated plate 1〇30, along upper support ring 1〇31 or anywhere else where substrate 1250 may need to be adequately visualized. Preferably, camera 1360 is placed over the cover. A stationary portion. In the particular embodiment of Figure 1 'camera 1 3 6 0 is fixed to an upper support ring 1 〇 3 1 . To facilitate operation of the camera 1360, a light source (not shown) is required. Preferably, the light source is also placed on a stationary portion of the cover; however, its Φ is placed anywhere adjacent the processing region I025. The light source is used to illuminate the substrate 1250° during processing.

• 照相機1360最好是一電荷耦合顯示器照相機(「ccD 照相機J ),其係使用一串列之像素以記錄數位影像。一監 祝器(未顯示)係設在單兀1010外部以提供基材1250表面 的光視學。依此方法,可對流體之分配、及由基材125〇 的無電處理流趙的足夠覆蓋&供視覺驗證。 ⑧ 51 1355298 配 期 許 材 過 主 係 〇 蓋 度 其 流 覆 上 在 處 降 運 視覺驗證最好透過人工監控提供。然而,在一配置中 視覺驗證係透過一機器視覺控制型式之過程提供。在此 置t’ 一已被足夠覆蓋的基材1250之影像經程式化進入 控制器(如電腦)中。該控制器接著監控在流體分配製程 間由照相機13 6 0產生的像素影像。該流體分配製程不允 暫停’至少直到由照相機1 360中的像素偵測到的實際基 影像匹配預先記錄的影像。 照相機13 60視需要可為紅外照相機。紅外照相機將 滤視覺波長,但可辨認熱波長。在影像争色差因此是該 題(即,基材1250)中溫度差異的指標。在被分配之流體 在與基材1250表面不同的溫度下,溫度差將記錄為色差 流體分配將繼續直到溫度差消失,提供基材i 2 5 0完全覆 的一指標。較佳的是,透過機器視覺控制可再次監控溫 差。因此,能確保基材的完全覆蓋。 在一配置中’照相機1360可在一回路控制下操作, 具有使化學品分配臂1406之動作及化學品喷嘴1402的 動最佳化之軟體,以培保晶圓1250表面具有連續的化學 蓋。 第11圖呈現在一額外替代性具體實施例中之面朝 無電處理單元1010的斷面圖。在此,再次藉著透過置放 一氣體傳遞多孔板1030中的喷嘴1402喷灑之流體,將 理流體施加到基材1 2 5 0的接收表面.在此具體實施例中 氣體傳遞多孔板1030係選擇性地相對基材1250昇舉及 低。更明確言之,室蓋組件1 033相對於基材1250轴向 52 1355298 動為達成此軸向運動,會使用一室蓋昇舉組件1〇79。一 室蓋馬達f A T5 « 咬、田項目108 0·概要表示)可用作為室蓋昇舉組件 1079的一邮八• Camera 1360 is preferably a charge coupled display camera ("ccD Camera J" that uses a series of pixels to record digital images. A reminder (not shown) is attached to the outside of unit 1010 to provide a substrate Photographics of the surface of the 1250. According to this method, the distribution of the fluid and the sufficient coverage of the electroless treatment of the substrate 125〇 can be visually verified. 8 51 1355298 The mating period is over the main system. The visual verification of the flow over landing is preferably provided by manual monitoring. However, in one configuration the visual verification is provided by a process of machine vision control. Here, a substrate 1250 that is adequately covered is placed. The image is programmed into a controller, such as a computer, which then monitors the image of the pixel produced by the camera 160 in the fluid dispensing process. The fluid dispensing process does not allow 'pause' at least until the pixel in camera 1 360 The detected actual base image matches the pre-recorded image. Camera 13 60 can be an infrared camera as needed. The infrared camera will filter the visual wavelength, but The thermal wavelength is the difference in the temperature difference in the image (ie, substrate 1250). The temperature difference will be recorded as the color difference fluid distribution will continue when the fluid being dispensed is at a different temperature than the surface of the substrate 1250. Until the temperature difference disappears, an indicator of the complete coverage of the substrate i 250 is provided. Preferably, the temperature difference can be monitored again by machine vision control. Therefore, complete coverage of the substrate can be ensured. In one configuration, the camera 1360 can Operating under primary loop control, there is a software that optimizes the action of the chemical dispensing arm 1406 and the movement of the chemical nozzle 1402 to protect the surface of the wafer 1250 with a continuous chemical cover. Figure 11 presents an additional alternative. A cross-sectional view of the electroless treatment unit 1010 in a specific embodiment. Here, the fluid is applied to the substrate 1 2 again by a fluid sprayed through a nozzle 1402 in which a gas-transporting porous plate 1030 is placed. The receiving surface of 50. In this embodiment, the gas-transporting porous plate 1030 is selectively lifted and lowered relative to the substrate 1250. More specifically, the chamber lid assembly 1 033 is axially oriented relative to the substrate 1250. 52 1355298 In order to achieve this axial movement, a one-chamber lift assembly 1〇79 is used. One chamber cover motor f A T5 «Bite, field project 108 0·summary) can be used as a cover lift assembly 1079 Post eight

句令。該馬達1080,最好是由電致動,且在一具 艘實施例Φ,-1» U 了使用線性馬達。然而,其或可表示氣動空 氣汽缸β 由致動該馬達1080,,室蓋昇舉組件1〇79控制在在 夕孔板1030及基材1250間之處理區域1〇25的容積》該蓋 係裝附至馬達滑件1 〇 8 2,其係由使馬達驅動以升高及 降低該蓋。一附加裙部1084係可裝附至蓋1〇32,以防止 喷濺及/或使進到處理區域1025内的大氣氣體滲漏減到最 乂。此—配置係可用於控制靠近基材1250表面的氣體流動 及氧氣位準。 上述面朝上無電電鍍單元之各種具體實施例已在處理 基材1250的文脈中描述。然而,應注意的是該電链單元 3在支撐指狀件13〇〇(或支撐環)上無基材時操作。更明確 流體引入系統1 200及流體出口系統i 24〇可在處理 區域12 99内未佈置基材時操作β例如,去離子水或其他清 或中洗流體可在無基材時,透過流體傳送臂(例如第8 圖的臂1406)或流體傳遞板(譬如帛1〇圖之氣體傳遞多孔 ,1〇3〇)注人。此可進行以提供對支撐指狀件β⑽及其他 室零件之清潔《為進一步協助此清潔步驟,可降低該流體 傳-臂(根據第则),可降低此流體傳遞頭件(根據第u 圖),或可升高基材支撐組件(根據第8Α圏)^ 雖然前述係關於本發明的具體實施例,可提出本發明 53 1355298 的其他及進一步的具體實施例而不脫離其基本範疇, 且其 範疇是由隨附申請專利範圍決定。Order. The motor 1080, preferably electrically actuated, uses a linear motor in one of the embodiments Φ, -1»U. However, it may mean that the pneumatic air cylinder β is actuated by the motor 1080, and the chamber cover lifting assembly 1〇79 controls the volume of the treatment area 1〇25 between the slab 1030 and the substrate 1250. Attached to the motor slide 1 〇 8 2, which is driven by the motor to raise and lower the cover. An additional skirt 1084 can be attached to the lid 1 32 to prevent splashing and/or minimize atmospheric gas leakage into the treatment zone 1025. This configuration can be used to control gas flow and oxygen levels near the surface of substrate 1250. Various embodiments of the above-described upward facing electroless plating unit have been described in the context of processing substrate 1250. However, it should be noted that the electrical chain unit 3 operates when there is no substrate on the support fingers 13 (or support rings). More specifically, the fluid introduction system 1 200 and the fluid outlet system i 24 can operate when no substrate is disposed within the processing region 12 99. For example, deionized water or other clear or intermediate wash fluid can be transported through the fluid when there is no substrate. An arm (such as arm 1406 of Figure 8) or a fluid transfer plate (such as a gas transfer porous, 1〇3〇) is noted. This can be done to provide cleaning of the support fingers β(10) and other chamber parts. To further assist in this cleaning step, the fluid transfer arm can be lowered (according to the first) to reduce the fluid transfer headpiece (according to Figure u) Or, the substrate support assembly can be raised (according to Section 8). Although the foregoing is a specific embodiment of the present invention, other and further embodiments of the present invention 53 1355298 can be proposed without departing from the basic scope and scope thereof. It is determined by the scope of the attached patent application.

【圖式簡單說明】 為詳細瞭解以上引用之本發明特徵,將综合以上 並藉由參考具體實施例(某些將示範於附圖中)對本發 行一更特別之說明。應注意的是,附圖僅示範本發明. 型具體實施例,因此不應視為對其範疇之限制,因為 明可容納其他同等有效之具體實施例。 第1圖是一範例性無電電鍍之平面圖。 第2圖是一範例性沉積系統之透視圖。 第3圖是一移走該包圍件之範例性沉積系統的 說明 明進 之典 本發 透視BRIEF DESCRIPTION OF THE DRAWINGS For a detailed understanding of the features of the present invention as set forth above, reference will be made to the appended claims. It should be noted that the drawings are merely illustrative of specific embodiments of the invention, and therefore should not be considered as limiting the scope of the invention. Figure 1 is a plan view of an exemplary electroless plating. Figure 2 is a perspective view of an exemplary deposition system. Figure 3 is an illustration of an exemplary deposition system that removes the enclosure.

圖。 第4圖是一範例性沉積系統的斷面圖。 第5圖是一範例性流體處理站的斷面圖。 第6圖是一範例性基材支撐組件的透視圖。 第7圖是一範例性流體處理站的斷面圖。 第8圖提供一使用置於該室内一流體傳送臂上之 的面朝上無電處理室的斷面圖。此外,所顯示之基材 組件係用於選擇性地昇舉或降低該室内之基材。在此 中,基材昇舉組件是在其已降低的位置。 第8A圖呈現第8圖中面朝上之無電處理室的斷 視圖。在此圖式中,基材支撐組件係在其昇舉位置。 第8B圖呈現在一替代性具體實施例中,第8圖 喷嘴 昇舉 圖式 面側 的面 54 1355298 朝上之無電處理室的斷面側視圖。在此圖中,該樞轉臂係 適應此不只柩轉而且也轴向移動。此外,該擴散板現包括 加熱元件。 第9圖顯示第8圖中面朝上之無電處理室的俯視圖。 在此圖中,流體引入系統的流體傳遞臂係顯示與已安裝的 基材有關。Figure. Figure 4 is a cross-sectional view of an exemplary deposition system. Figure 5 is a cross-sectional view of an exemplary fluid handling station. Figure 6 is a perspective view of an exemplary substrate support assembly. Figure 7 is a cross-sectional view of an exemplary fluid handling station. Figure 8 provides a cross-sectional view of a face-up, electroless process chamber using a fluid transfer arm disposed within the chamber. In addition, the substrate components shown are used to selectively lift or lower the substrate within the chamber. Here, the substrate lift assembly is in its lowered position. Figure 8A shows a broken view of the face-up electroless processing chamber of Figure 8. In this figure, the substrate support assembly is in its raised position. Figure 8B is a cross-sectional side elevational view of the electroless processing chamber facing upwards in an alternative embodiment, Figure 8 of the nozzle lift pattern side face 54 1355298. In this figure, the pivoting arm is adapted to this not only to twirling but also to move axially. In addition, the diffuser plate now includes a heating element. Fig. 9 is a plan view showing the electroless processing chamber facing upward in Fig. 8. In this figure, the fluid transfer arm of the fluid introduction system is shown to be associated with the installed substrate.

第1 0圖以一替代性流具體實施例提供面朝上之無電 處理室的斷面側視圖。在此圖中,處理流體係透過置於一 室蓋組件内一氣體傳遞板中的一或多個喷嘴傳遞。 第10A圓呈現第10圖中面朝上之無電處理室的斷面 側視圖。在此圖中,一氣體分流器係設置在該室内。在此 圖中,該氣體分流器係在其已降低之位置》 第10B圓呈現第10圖中面朝上之無電處理室的另一 斷面圖。在此圖中,該氣體分流器係在其已升高位置。Figure 10 shows a cross-sectional side view of an upwardly facing electroless processing chamber in an alternative flow embodiment. In this Figure, the process stream system is delivered through one or more nozzles disposed in a gas transfer plate within a chamber cover assembly. The 10A circle presents a cross-sectional side view of the face-up electroless processing chamber of Fig. 10. In this figure, a gas splitter is placed in the chamber. In this figure, the gas splitter is in a position where it has been lowered, and the 10th circle shows another sectional view of the face-up electroless treatment chamber in Fig. 10. In this figure, the gas splitter is in its raised position.

第 11圖以又一額外替代性流具體實施例呈現一面朝 上之無電處理室的斷面圖。在此圖中,處理流體係再次藉 由透過置於氣體傳遞板中的喷嘴喷灑流體,以應用到一基 材的接收表面。在此具體實施例中,該室蓋組件係相對於 基材轴向移動。 第12及13圖呈現可與本文中描述的無電處理室連接 使用之喷嘴的斷面圖。 【主要元件符號說明】 10 0 系統 10 2 處理單元位置Figure 11 is a cross-sectional view showing an upwardly facing electroless processing chamber in yet another additional alternative flow embodiment. In this figure, the process stream system is again applied to the receiving surface of a substrate by spraying fluid through a nozzle placed in the gas transfer plate. In this particular embodiment, the chamber cover assembly is moved axially relative to the substrate. Figures 12 and 13 show cross-sectional views of nozzles that can be used in connection with the electroless processing chambers described herein. [Main component symbol description] 10 0 System 10 2 Processing unit position

55 135529855 1355298

104 處 理 單 元 位 置 105 106 處 理 單 元 位 置 108 110 處 理 單 元 位 置 111 112 處 理 單 元 位 置 113 114 處 理 單 元 位 置 115 116 處 理 單 元 位 置 120 122 葉 片 124 126 基 材 130 132 工廠介面機械臂 134 135 退 火 站 136 137 加 敎 板 140 150 機 械 臂 轨 道 302 304 具 有 閥 之 接 σ 305 308 中 央 内 部 壁 3 10 312 隔 離 之 處 理 容積 3 13 3 14 排 放 σ 3 15 400 沉 積 站 401 402 無 電 活 化 站 403 404 無 電 沉 積 站 405 406 流 體 分 配 臂 407 408 流 體 分 配 臂 409 410 流 體 容 積 411 412 垂直延伸基材支撐指狀件 413 414 可 旋 轉 基 材 支撐組件4 1 5 計量檢查站 處理單元位置 製程控制器 處理主框架 連結隧道 主框架機械臂 葉片 工廠介面 載入站 冷卻站 基材轉移機械臂 處理包圍件 基材轉移穿梭器 缺口或狹缝 隔離之處理容積 環境控制組件 基材104 processing unit location 105 106 processing unit location 108 110 processing unit location 111 112 processing unit location 113 114 processing unit location 115 116 processing unit location 120 122 blade 124 126 substrate 130 132 factory interface robot 134 135 annealing station 136 137 Plate 140 150 Manipulator track 302 304 with valve connection σ 305 308 Central internal wall 3 10 312 Isolated treatment volume 3 13 3 14 Discharge σ 3 15 400 Deposition station 401 402 Electrostatic activation station 403 404 Electrodeposition station 405 406 Fluid distribution Arm 407 408 Fluid Dispensing Arm 409 410 Fluid Volume 411 412 Vertically Extending Substrate Support Finger 413 414 Rotatable Substrate Support Assembly 4 1 5 Metering Checkpoint Processing Unit Position Process Controller Process Main Frame Link Tunnel Main Frame Robot Blade Factory interface loading station cooling station substrate transfer robot arm processing enclosure substrate transfer shuttle notch or slit isolation processing volume environmental control component substrate

溫度控制平台 擴散構件 流動iL 流體供應導管 支撐環結構 昇舉組件 垂直柱件 56 ⑧ 1355298 415a 基材支撐表面 416 流體流動擋板 417 基板構件 418 承接環 419 承接環 420 流體排水器 420a 流體排水器 420b 流體排水器 421a 終止端 421b 終止端 422 交錯壁组件 423 上交錯壁 424 下交錯壁 425 上臂構件 426 靜止基座構件 427 螺旋支重具 428 旋轉密封 429 分離盒 430 氣體排放口 43 1 流體排放裝置 432 回收口 433 加熱器 1004 箭頭 1010 無電處理單元 1012 基板 1013 基座構件 1014 基座構件 1015 單元本體 1016 底部壁 1025 處理區域 1030 氣體傳遞多孔板 103 1 上支撐環 1032 蓋 1033 室蓋組件 1034 增壓室 1035 閥 1036 密封件 1037 密封件 1038 氣體供應器 1039 真空來源 1040 氣體管線 1052 基材支撐指狀 1054a上軸承 1054b下轴承 1060 基材支撐昇舉組件 1061 導螺桿 1062 馬達 1064 指狀滑件 57 ⑧ 1355298Temperature Control Platform Diffusion Member Flow iL Fluid Supply Conduit Support Ring Structure Lifting Assembly Vertical Column 56 8 1355298 415a Substrate Support Surface 416 Fluid Flow Baffle 417 Substrate Member 418 Receiving Ring 419 Receiving Ring 420 Fluid Drain 420a Fluid Drain 420b Fluid Drainer 421a Termination End 421b Termination End 422 Staggered Wall Assembly 423 Upper Staggered Wall 424 Lower Staggered Wall 425 Upper Arm Member 426 Static Base Member 427 Spiral Elevator 428 Rotary Seal 429 Separation Box 430 Gas Drain Port 43 1 Fluid Drain 432 Recovery port 433 heater 1004 arrow 1010 electroless processing unit 1012 substrate 1013 base member 1014 base member 1015 unit body 1016 bottom wall 1025 processing area 1030 gas transfer perforated plate 103 1 upper support ring 1032 cover 1033 chamber cover assembly 1034 plenum 1035 Valve 1036 Seal 1037 Seal 1038 Gas Supply 1039 Vacuum Source 1040 Gas Line 1052 Substrate Support Finger 1054a Upper Bearing 1054b Lower Bearing 1060 Substrate Support Lift Assembly 1061 Lead Screw 1062 Motor 1064 Finger Slider 57 8 1355 298

1066 具溝槽之殼體 1079 室蓋 1080 轴向馬達 1082 馬達 1 080' 室蓋馬達 1084 裙部 1102 氣體分流Is 1108 狹缝 1112 加熱線圈 1121 環狀 1154 溫度探針 1161 加熱 1162 過濾器 1164 基材 1166 基材流體入口管線 1170 流體 1200 引入系统 1202 處理 1203 DI水源 1204 處理 1206 處理流體 1207 惰性 1208 計量泵 1209 分配 1210 前級管線 1212 箱體 1214 iL 1216 流體 1218 流體入口 1225 入口 1227 出口管線 1240 流體 1244 喷嘴氣體供應器 1246 排放 1248 排放系統 1249 流體 1250 基材 1280 製程 1299 基材支撐組件 1300 基材 1301 非旋轉基板支撐件 1302 擴散 1304 基板構件 1305 基板 1306 流體通道 1308 流體 13 10 流體容積 1312 熱轉 昇舉组件 滑件 密封 器 流體加熱器 除氣單元 流體 流體 氣源 閥 出σ 管 出口系統 管 排水器 控制器 支撐指狀件 組件 導管 入口管 移區域 58 1355298 1360 1404 1410 1422 相機 配臂馬達 護構件 體通道 體 1402喷嘴 1406流體傳遞臂 1420氣體通道 1424尖端 14261066 grooved housing 1079 cover 1080 axial motor 1082 motor 1 080' cover motor 1084 skirt 1102 gas split Is 1108 slit 1112 heating coil 1121 ring 1154 temperature probe 1161 heating 1162 filter 1164 substrate 1166 Substrate Fluid Inlet Line 1170 Fluid 1200 Inlet System 1202 Process 1203 DI Water Source 1204 Process 1206 Process Fluid 1207 Inert 1208 Metering Pump 1209 Dispense 1210 Foreline 1212 Tank 1214 iL 1216 Fluid 1218 Fluid Inlet 1225 Inlet 1227 Outlet Line 1240 Fluid 1244 Nozzle gas supply 1246 discharge 1248 discharge system 1249 fluid 1250 substrate 1280 process 1299 substrate support assembly 1300 substrate 1301 non-rotating substrate support 1302 diffusion 1304 substrate member 1305 substrate 1306 fluid channel 1308 fluid 13 10 fluid volume 1312 heat transfer Lifting assembly sealer fluid heater degassing unit fluid fluid source valve out σ tube outlet system tube drain controller support finger assembly conduit inlet tube shifting area 58 1355298 1360 1404 1410 1422 camera arm motor Guard member body passage body 1402 nozzle 1406 fluid transfer arm 1420 gas passage 1424 tip 1426

Claims (1)

Γ355298 日修(更)正替換頁 月修正Γ355298 日修 (more) is replacing the page 拾、申請專利範圍: 1. 一種無電沉積系統,包含: 一處理主框架; 至少一基材清潔站,其係定位在該主框 一無電沉積站,其係定位在該主框架上 沉積站包含: 一環境受控制處理包圍件; 一第一流體處理站,其係定位在該j 一第二流體處理站,其係定位在該丨 一基材轉移穿梭器(shuttle),其係定 中,以在該第一及第二流體處理站間轉与 一基材轉移機械臂,其係定位在該主框 以存取該處理包圍件的内部, 其中該第一及第二流體處理站中之至少 一可旋轉基材支撐組件,其係設置以 處理;以及 複數個流體承接環,自該等處理站的 上延伸,朝向定位在該基材支撐組件上的 邊,其中各該複數個流體承接環係設置以在 一對應高度時,收集來自該基材之流體。 2.如申請專利範圍第1項所述之沉積系統, 基材支撐組件係設置以支撐一基材作方4 架上; ,其中該無電 ί理包圍件中; 色圍件中;及 位在該包圍件 多基材;及 架上且係設置 一者包含: 支撐一基材作 内部向内且向 該基材之一周 該基材定位於 其中該可旋轉 t朝上之處理。 60 Γ355298 w 丨 ι_ · 1 ........... v.r 日修(更)止替換頁: 3 .如申請專利範圍第2項所述之沉積系統,其中該可旋轉 基材支撐组件包含: 一垂直昇舉组件;及 複數個基材接合指狀件,其係定位以與該垂直昇舉組 件連通。Scope of application: 1. An electroless deposition system comprising: a processing main frame; at least one substrate cleaning station positioned in the main frame, an electroless deposition station, the system is positioned on the main frame, the deposition station comprises An environmentally controlled processing enclosure; a first fluid processing station positioned at the second fluid processing station, the system being positioned in the first substrate transfer shuttle, in the system, Transmitting between the first and second fluid processing stations and a substrate transfer robot, the main frame being positioned to access the interior of the processing enclosure, wherein the first and second fluid processing stations are At least one rotatable substrate support assembly disposed for processing; and a plurality of fluid receiving rings extending from the processing stations toward sides positioned on the substrate support assembly, wherein each of the plurality of fluids is received The ring system is arranged to collect fluid from the substrate at a corresponding height. 2. The deposition system of claim 1, wherein the substrate support assembly is configured to support a substrate as a four-piece; wherein the non-electrical enclosure is in the color; The enclosure is multi-substrate; and the shelf is provided and includes: a substrate that supports the substrate to be inwardly inwardly and to which the substrate is positioned to one of the substrates, wherein the rotatable t is upward. 60 Γ 355 298 w _ _ _ _ _ _ _ _ _ _ _ _ _ 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 沉积 沉积 沉积 沉积 沉积 沉积 沉积 沉积 沉积The assembly includes: a vertical lift assembly; and a plurality of substrate engaging fingers positioned to communicate with the vertical lift assembly. 4.如申請專利範圍第3項所述之沉積系統,其中該複數値 基材接合指狀件及該垂直昇舉组件係設置以協同地將 該基材定位平行於一流體擴散構件,該流體擴散構件係 定位在該第一及第二流體處理站中之至少一者内。 5.如申請專利範圍第2項所述之沉積系統,其中該第一及 第二流體處理站中之至少一者更包含: 一流體擴散構件; 一基板,其可密封地接合該流體擴散構件之一背側的 一周邊,且形成在該基板及該流體擴散構件之該背側間的 一流體容積;及 一流體供應導管,其流體連通該流體容積。 6 .如申請專利範圍第5項所述之沉積系統,其中該流體供 應導管係流體連通一溫度受控制流體來源。 7.如申請專利範圍第5項所述之沉積系統,其中該流體擴 61 Γ355298 W日修(更)正替換頁 散構件包含一多孔陶瓷盤。 8 ·如申請專利範圍第5項所述之沉積系統,其中該流體擴 散構件包含一盤狀構件,其具有複數個形成於其間的 孑L 。4. The deposition system of claim 3, wherein the plurality of substrate bonding fingers and the vertical lifting assembly are arranged to cooperatively position the substrate parallel to a fluid diffusion member, the fluid A diffusion member is positioned within at least one of the first and second fluid processing stations. 5. The deposition system of claim 2, wherein at least one of the first and second fluid processing stations further comprises: a fluid diffusion member; a substrate sealingly engaging the fluid diffusion member a periphery of the back side, and a fluid volume formed between the substrate and the back side of the fluid diffusion member; and a fluid supply conduit in fluid communication with the fluid volume. 6. The deposition system of claim 5, wherein the fluid supply conduit is in fluid communication with a temperature controlled fluid source. 7. The deposition system of claim 5, wherein the fluid expands (more) the replacement member comprises a porous ceramic disk. 8. The deposition system of claim 5, wherein the fluid diffusion member comprises a disk member having a plurality of 孑L formed therebetween. 9 ·如申請專利範圍第8項所述之沉積系統,其中該複數個 孔之直徑介於0.7毫米及3毫米間。 1 0.如申請專利範圍第1項所述之沉積系統,其中該第一及 第二流體處理站各包含一可移動流體分配臂,其流體連 通一溫度受控制處理流體的來源。9. The deposition system of claim 8, wherein the plurality of holes have a diameter between 0.7 mm and 3 mm. The deposition system of claim 1, wherein the first and second fluid processing stations each comprise a movable fluid dispensing arm fluidly coupled to a source of temperature controlled processing fluid. 1 1 ·如申請專利範圍第1項所述之沉積系統,其中該環境受 控制處理包圍件包含一第一處理容積,其係定位在該第 一流體處理站上方;及一第二處理容積,其係定位在該 第二流體處理站上方,該第一處理容積係藉由一中央壁 至少部分地與該第二處理容積分離。 12.如申請專利範圍第11項所述之沉積系統,其中該第一 及第二處理容積的一頂部空間容積各在1500立方英吋 及5 000立方英吋間。 62 1.355298 IN. 1 7月H3修(史)正替換頁 13.如申請專利範圍第11項所述之沉積系統,其中該第一 及第二處理容積具有一環境控制組件,其連通該等處理 容積。 1 4.如申請專利範圍第1 3項所述之沉積系統,其中該環境 控制組件包含一處理氣體供應器、一加熱器,及一濕潤 器中之至少一者。The deposition system of claim 1, wherein the environmentally controlled processing enclosure comprises a first processing volume positioned above the first fluid processing station; and a second processing volume, The system is positioned above the second fluid processing station, the first processing volume being at least partially separated from the second processing volume by a central wall. 12. The deposition system of claim 11, wherein a volume of the headspace of the first and second processing volumes is between 1500 cubic feet and 5,000 cubic feet. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Volume. The deposition system of claim 13, wherein the environmental control component comprises at least one of a process gas supply, a heater, and a humidifier. 1 5 .如申請專利範圍第1 4項所述之沉積系統,更包合一排 放口 ,其係定位在各該第一及第二流體處理站中。 1 6.如申請專利範圍第1 5項所述之沉積系統,其中該處理 氣體供應器及該排放口係協同地設置以在一處理步驟 期間,維持該第一及第二處理容積中的氧含量少於 1 OOppm 〇The deposition system of claim 14, further comprising a discharge port positioned in each of the first and second fluid processing stations. The deposition system of claim 15 wherein the process gas supply and the vent are cooperatively arranged to maintain oxygen in the first and second process volumes during a processing step Content less than 1 OOppm 〇 1 7. —種用於半導體處理之流體沉積系統,包含: 一處理包圍件,其界定一環境受控制處理容積; 一第一流體處理單元,其係定位在該受控制處理容積 内; 一第二流體處理單元,其係定位在該受控制處理容積 内:及 一基材穿梭器,其係定位在該受控制處理容積内,且 係設置以在該第一及第二流體處理單元間樞轉地轉移一基 63 1-355298 ^6.¾7日修(更)正替換頁 材, 其中該第一及第二流體處理單元各包含: 一流體可穿過擴散構件,其中該流體擴散構件包 含一盤狀構件,其具有複數個徑向分隔之流體分配孔 形成其間,且該等流體分配孔流體連通一溫度受控制 流體來源;1 7. A fluid deposition system for semiconductor processing, comprising: a processing enclosure defining an environmentally controlled processing volume; a first fluid processing unit positioned within the controlled processing volume; a two-fluid processing unit positioned within the controlled processing volume: and a substrate shuttle positioned within the controlled processing volume and disposed to intervene between the first and second fluid processing units Transferring a base 63 1-355298 ^6.3⁄47 day repair (more) replacing the sheet material, wherein the first and second fluid processing units each comprise: a fluid passable through the diffusion member, wherein the fluid diffusion member comprises a disc-shaped member having a plurality of radially spaced fluid dispensing apertures formed therebetween, and wherein the fluid dispensing orifices are in fluid communication with a temperature controlled fluid source; 一基材支撐組件,其係設置以可旋轉地支撐一基 材,該基材以一面朝上方式設置並與該流體擴散構件 平行,以進行處理;及 一流體分配臂,其係可移動地定位於該基材支撐 組件上方,以分配一處理流體至定位在該基材支撐組 件上之該基材。a substrate support assembly rotatably supporting a substrate disposed in an upwardly facing manner and in parallel with the fluid diffusion member for processing; and a fluid dispensing arm movable Positioned above the substrate support assembly to dispense a treatment fluid to the substrate positioned on the substrate support assembly. 1 8 ·如申請專利範圍第1 7項所述之沉積系統,更包含一受 控制處理氣體供應器及一處理氣體排放口,二者均流體 連通該受控制處理容積,該處理氣體供應器及該處理氣 體排放口係協同設置以在該處理容積内產生少於 lOOppm之氧氣。 19.如申請專利範圍第17項所述之沉積系統,更包含一中 央壁,其係定位以將該受控制處理容積分成定位在該第 一流體處理單元上之一第一處理容積,及定位在該第二 流體處理單元上之一第二處理容積。 64 1355298The deposition system of claim 17, further comprising a controlled process gas supply and a process gas discharge port, both of which are in fluid communication with the controlled process volume, the process gas supply and The process gas vents are cooperatively arranged to produce less than 100 ppm of oxygen within the process volume. 19. The deposition system of claim 17, further comprising a central wall positioned to divide the controlled processing volume into a first processing volume positioned on the first fluid processing unit, and positioned A second processing volume on the second fluid processing unit. 64 1355298 曰修(更)正替換頁 2 0 ·如申請專利範圍第1 9項所述之沉積系统,其中該 及第二處理容積中之至少一者具有介於1000立方 及5000立方英吋之間的一頂部空間容積。 2 1 ·如申請專利範圍第1 9項所述之沉積系統,其中自 材到該第一及第二處理容積頂部之一下表面的垂 離係介於1 2英吋及3 6英吋間。 2 2 .如申請專利範圍第1 7項所述之沉積系統,其中該 體分配孔係流體連通一溫度受控制液體來源。 2 3 .如申請專利範圍第1 7項所述之沉積系統,其中該 擴散構件包含一流體可穿過之多孔陶瓷盤構件。 24 ·如申請專利範圍第1 7項所述之沉積系統,其中該 支撐組件包含複數個可垂直致動的基材支撐指狀件 2 5 .如申請專利範圍第1 7項所述之沉積系統,其中該 分配臂係流體連通一溫度受控制處理流體來源。 26.—種無電沉積系統,包含: 一處理主框架; 至少一基材清潔站,位於該處理主框架上; 一無電沉積站,位於該處理主框架上,其中該無 第一 英吋 該基 直距 等流 流體 基材 〇 流體 電沉 65 Γ355298 %6f曰修(更)正替換頁 積站包括: 一環境受控制處理包圍件; 一第一流體處理站,位於該環境受控制處理包圍 件中; 一第二流體處理站,位於該環境受控制處理包圍 件中;以及The deposition system of claim 19, wherein at least one of the second processing volume has between 1000 and 5000 cubic feet. A head space volume. The deposition system of claim 19, wherein the separation from the material to the lower surface of one of the tops of the first and second treatment volumes is between 1 2 inches and 36 inches. The deposition system of claim 17, wherein the body distribution orifice is in fluid communication with a temperature controlled source of fluid. The deposition system of claim 17, wherein the diffusion member comprises a porous ceramic disk member through which a fluid can pass. The deposition system of claim 17, wherein the support assembly comprises a plurality of vertically actuatable substrate support fingers 25. The deposition system of claim 17 Where the dispensing arm is in fluid communication with a source of temperature controlled processing fluid. 26. An electroless deposition system comprising: a processing main frame; at least one substrate cleaning station on the processing main frame; an electroless deposition station on the processing main frame, wherein the first infinity base Straight-distance isotropic fluid substrate 〇 fluid sink 65 Γ355298%6f曰 (more) positive replacement page stack includes: an environmentally controlled processing enclosure; a first fluid processing station located in the environmentally controlled processing enclosure a second fluid processing station located in the environmentally controlled processing enclosure; 一基材轉移穿梭器,位於該環境受控制處理包圍 件中,以於該第一流體處理站與該第二流體處理站之 間轉移多個基材;以及 一基材轉移機械臂,位於該處理主框架上且經配置以 進入該環境受控制處理包圍件之一内部。 27.如申請專利範圍第26項所述之沉積系統,其中該第一 流體處理站與該第二流體處理站包含一可旋轉基材支 撐組件經設置以支撐一基材作方位朝上之處理。a substrate transfer shuttle located in the environmentally controlled processing enclosure for transferring a plurality of substrates between the first fluid processing station and the second fluid processing station; and a substrate transfer robot located at the Processing on the main frame and configured to enter the interior of one of the controlled enclosures of the environment. 27. The deposition system of claim 26, wherein the first fluid processing station and the second fluid processing station comprise a rotatable substrate support assembly configured to support a substrate for upward orientation . 28.如申請專利範圍第27項所述之沉積系統,其中該可旋 轉基材支撐組件包括: 一垂直昇舉組件;以及 複數個基材接合指狀件,其係定位以連通該垂直昇舉組 件。 29·如申請專利範圍第28項所述之沉積系統,其中該複數 個基材接合指狀件及該垂直昇舉組件係設置以協同地 66 Γ35529828. The deposition system of claim 27, wherein the rotatable substrate support assembly comprises: a vertical lift assembly; and a plurality of substrate engagement fingers positioned to communicate the vertical lift Component. The deposition system of claim 28, wherein the plurality of substrate bonding fingers and the vertical lifting assembly are arranged to cooperate 66 Γ 355298 曰修(更)正替換頁 將該基材定位平行於一流體擴散構件,該流體擴散構件 係定位在該第一及第二流體處理站中之至少一者内。 30.如申請專利範圍第27項所述之沉積系统,其中該第一 及第二流體處理站中之至少一者更包含: 一流體擴散構件; 一基板,其可密封地接合該流體擴散構件之一背側的一 周邊,且形成在該基板及該流體擴散構件之該背側間的一The repairing (more) positive replacement page positions the substrate parallel to a fluid diffusion member positioned within at least one of the first and second fluid processing stations. 30. The deposition system of claim 27, wherein at least one of the first and second fluid processing stations further comprises: a fluid diffusion member; a substrate sealingly engaging the fluid diffusion member a periphery of one of the back sides, and formed between the substrate and the back side of the fluid diffusion member 一流體供應導管,其流體連通該流體體積。 3 1 ·如申請專利範圍第3 0項所述之沉積系統,其中該流體 供應導管流體連通一溫度受控制流體來源。 3 2,如申請專利範圍第3 0項所述之沉積系統,其中該流體 擴散構件包含一多孔陶瓷盤。A fluid supply conduit is in fluid communication with the fluid volume. The deposition system of claim 30, wherein the fluid supply conduit is in fluid communication with a temperature controlled fluid source. The deposition system of claim 30, wherein the fluid diffusion member comprises a porous ceramic disk. 3 3 .如申請專利範圍第3 0項所述之沉積系統,其中該流體 擴散構件包含一盤狀構件,其具有複數個形成於其間的 孑L » 3 4.如申請專利範圍第3 3項所述之沉積系統,其中該複數 個孔之直徑介於0.7毫米及3毫米間。 673. The deposition system of claim 30, wherein the fluid diffusion member comprises a disk-shaped member having a plurality of 孑L » 3 formed therebetween 4. As claimed in claim 3 The deposition system, wherein the plurality of holes have a diameter between 0.7 mm and 3 mm. 67 Γ355298 饥¥·城日修(更)正替換頁 35.如申請專利範圍第26項所述之沉積系統,其中該第 及第二流體處理站各包含一可移動流體分配臂,其流 連通一溫度受控制處理流體的來源。 36.如申請專利範圍第26項所述之沉積系统,其中該環 受控制處理包圍件包含一第一處理容積,其係定位在 第一流體處理站上方;及一第二處理容積,其係定位 該第二流體處理站上方,該第一處理容積係藉由一中 壁至少部分地與該第二處理容積分離。 3 7 .如申請專利範圍第3 6項所述之沉積系統,其中該第 及第二處理容積的一頂部空間容積各在1500立方英 及5 0 0 0立方英吋間。 體 境 該 在 央 吋The deposition system of claim 26, wherein the second and second fluid processing stations each comprise a movable fluid dispensing arm, the flow communication being connected to a The temperature is controlled by the source of the treatment fluid. 36. The deposition system of claim 26, wherein the ring-controlled enclosure comprises a first processing volume positioned above the first fluid processing station; and a second processing volume Positioned above the second fluid processing station, the first processing volume is at least partially separated from the second processing volume by a central wall. The deposition system of claim 3, wherein a volume of the head space of the second and second processing volumes is between 1500 cubic feet and 5,000 cubic feet. The situation should be in the central government 3 8 .如申請專利範圍第3 6項所述之沉積系統,其中該第 及第二處理容積具有一環境控制組件,其連通該第一 3 9.如申請專利範圍第3 8項所述之沉積系統,其中該環 控制組件包含一處理氣體供應器、一加熱器,及一濕 器中之至少一者。 4 0 _如申請專利範圍第3 9項所述之沉積系統,更包含一 放口,其係定位在各該第一及第二流體處理站中。 及 境 潤 排 68 13552983. The deposition system of claim 36, wherein the second and second processing volumes have an environmental control component that communicates with the first 3 9. As described in claim 38 A deposition system, wherein the ring control assembly comprises at least one of a process gas supply, a heater, and a humidifier. The deposition system of claim 39, further comprising a venting port positioned in each of the first and second fluid processing stations. And the environment run the row 68 1355298 WV. ,¾7日修C更)正替換頁 4 1 .如申請專利範圍第4 0項所述之沉積系統,其中該處 氣體供應器及該排放口係協同地設置以在一處理步 期間,維持該第一及第二處理容積中的氧含量少 1 0Oppm ° 42.如申請專利範圍第28項所述之沉積系統,其中該第 及第二流體處理站中之至少一者包含複數個流體承 環,自該等流體處理站的内部向内且向上延伸,朝向 位在該等指狀件上的該基材之一周邊。 4 3 . —種用於半導體處理之流體沉積系統,包含: 一處理包圍件,其界定一環境受控制處理容積; 一第一流體處理單元,其係定位在該受控制處理容 内; 一第二流體處理單元,其係定位在該受控制處理容 内:及 一基材穿梭器,其係定位在該受控制處理容積内,且 設置以在該第一及第二流體處理單元間樞轉地轉移一 材,其中該第一及第二流體處理單元各包含: 一流體可穿過擴散構件; 一基材支撐組件,其係設置以可旋轉地支撐一基 與該流體擴散構件平行,以進行處理;以及 理 驟 於 接 定 積 積 係 基 材 69 Γ355298The deposition system of claim 40, wherein the gas supply and the discharge port are cooperatively disposed to be disposed during a processing step, in accordance with the fourth aspect of the invention. The deposition system of claim 28, wherein the at least one of the second and second fluid processing stations comprises a plurality of fluids, wherein the first and second processing volumes have a reduced oxygen content of less than 10 ppm. The retaining rings extend inwardly and upwardly from the interior of the fluid handling stations toward one of the sides of the substrate on the fingers. A fluid deposition system for semiconductor processing, comprising: a processing enclosure defining an environmentally controlled processing volume; a first fluid processing unit positioned within the controlled processing volume; a two-fluid processing unit positioned within the controlled processing volume: and a substrate shuttle positioned within the controlled processing volume and configured to pivot between the first and second fluid processing units Transferring a material, wherein the first and second fluid processing units each comprise: a fluid passable through the diffusion member; a substrate support assembly disposed to rotatably support a substrate in parallel with the fluid diffusion member Processing; and the process is based on the substrate of the integrated product 69 Γ 355298 一流體分配臂,可移動地定位以分配一處理流體至 定位於該基材支撐組件上的該基材。 44. 如申請專利範圍第43項所述之沉積系統,更包含一受 控制處理氣體供應器及一處理氣體排放口,二者均流體 連通該受控制處理容積,該處理氣體供應器及該處理氣 體排放口係協同設置以在該處理容積内產生少於 lOOppm之氧氣。A fluid dispensing arm is movably positioned to dispense a treatment fluid to the substrate positioned on the substrate support assembly. 44. The deposition system of claim 43, further comprising a controlled process gas supply and a process gas discharge port, both of which are in fluid communication with the controlled process volume, the process gas supply and the process The gas vents are cooperatively arranged to produce less than 100 ppm of oxygen within the processing volume. 45. 如申請專利範圍第43項所述之沉積系統,更包含一中 央壁,其係定位以將該受控制處理容積分成定位在該第 一流體處理單元上之一第一處理容積,及定位在該第二 流體處理單元上之一第二處理容積。45. The deposition system of claim 43, further comprising a central wall positioned to divide the controlled processing volume into a first processing volume positioned on the first fluid processing unit, and positioned A second processing volume on the second fluid processing unit. 46.如申請專利範圍第45項所述之沉積系統,其中該第一 及第二處理容積中之至少一者具有介於1〇〇〇立方英吋 及5000立方英吋之間的一頂部空間容積。 47.如申請專利範圍第45項所述之沉積系統,其中自該基 材到該第一及第二處理容積頂部之一下表面的垂直距 離係介於1 2英吋及3 6英吋間。 4 8.如申請專利範圍第4 3項所述之沉積系統,其中該流體 擴散構件包含一盤狀構件,其具有複數個徑向分隔之流 70 Γ355298 卿年6.另7日修(更)正替換買 體分配孔形成其間。 4 9.如申請專利範圍第4 8項所述之沉積系统,其中該等流 體分配孔流體連通一溫度受控制流體來源。 5 0.如申請專利範圍第4 3項所述之沉積系統,其中該流體 擴散構件包含一流體可穿過之多孔陶瓷盤構件。46. The deposition system of claim 45, wherein at least one of the first and second processing volumes has a headspace between 1 and 3 cubic feet. Volume. 47. The deposition system of claim 45, wherein a vertical distance from the substrate to a lower surface of one of the tops of the first and second processing volumes is between 1 2 inches and 36 inches. 4. The deposition system of claim 4, wherein the fluid diffusion member comprises a disk-shaped member having a plurality of radially separated flows 70 Γ 355298 qing qing 6. another 7 days repair (more) The replacement body dispensing hole is formed therebetween. 4. The deposition system of claim 4, wherein the fluid distribution orifices are in fluid communication with a temperature controlled fluid source. The deposition system of claim 4, wherein the fluid diffusion member comprises a porous ceramic disk member through which a fluid can pass. 5 1.如申請專利範圍第4 3項所述之沉積系統,其中該基材 支撐組件包含複數個可垂直致動之基材支撐指狀件。 5 2 ·如申請專利範圍第4 3項所述之沉積系統,其中該流體 分配臂係流體連通一溫度受控制處理流體來源。 53. —種無電處理系統,包含: 一處理主框架,經設置以支撐複數個流體處理單元;5. The deposition system of claim 4, wherein the substrate support assembly comprises a plurality of vertically actuatable substrate support fingers. The deposition system of claim 4, wherein the fluid dispensing arm is in fluid communication with a source of temperature controlled processing fluid. 53. An electroless processing system comprising: a processing main frame configured to support a plurality of fluid processing units; 一主框架機械臂,位於該主框架上,並經設置以存取各 該複數個流體處理單元;以及 至少二處理包圍件,定位於該處理主框架上,各該處理 包圍件包含: 一第一流體處理單元,經設置以在至少一溫度、壓 力與濕度受控制環境中,清潔並活化一基材之一表面; 一第二流體處理單元,經設置以在至少一溫度、壓 力與濕度受控制環境中,清潔並無電沉積一金屬層至該 71 Γ355298a main frame robot arm located on the main frame and configured to access each of the plurality of fluid processing units; and at least two processing enclosures positioned on the processing main frame, each of the processing enclosures comprising: a fluid processing unit configured to clean and activate a surface of a substrate in at least one temperature, pressure and humidity controlled environment; a second fluid processing unit configured to be subjected to at least one temperature, pressure and humidity In a controlled environment, clean without electrodepositing a metal layer to the 71 Γ 355298 基材之該表面上;以及 一基材穿梭器,經設置以於該第一及第二流體處 單元之間轉移多個基材。 理a surface of the substrate; and a substrate shuttle configured to transfer the plurality of substrates between the first and second fluid units. Rational 54.如申請專利範圍第53項所述之無電處理系统,其中 該等處理包圍件更包含一中央壁,用以將該處理包圍 分隔成一第一處理容積以及一第二處理容積,該第一 理容積與該第二處理容積係藉由形成於該中央壁中 一基材穿梭器狹缝而彼此連通。 55_如申請專利範圍第54項所述之無電處理系統,其中 第一處理容積與該第二處理容積各包含介於1500立 英吋至5 0 0 0立方英吋間之一頂部空間。54. The electroless processing system of claim 53, wherein the processing enclosure further comprises a central wall for dividing the processing enclosure into a first processing volume and a second processing volume, the first The conditioning volume and the second processing volume are in communication with one another by a substrate shuttle slit formed in the central wall. 55. The electroless processing system of claim 54, wherein the first processing volume and the second processing volume each comprise a headspace of between 1500 liters and 5,000 cubic feet. 56.如申請專利範圍第53項所述之無電處理系統,其中 第一及第二流體處理單元中之至少一者包含: 一流體擴散構件,具有一實質上平坦之上表面及貫通 形成的複數個流體分配孔;以及 一基材支撐組件,經設置以在一無電沉積製程期間, 一基材定位於距離該流體擴散構件1毫米至5毫米處。 各 件 處 之 該 方 該 其 將 57.如申請專利範圍第53項所述之無電處理系統,更包 一加熱流體來源連通該等流體分配孔。 含 72 1355298 7日修(更;正替換頁 58.如申請專利範圍第53項所述之無電處理系統,其中該 第一及第二流體處理單元各包含一可移動流體分配 臂,其連通一溫度受控制處理流體來源。 59.—種面朝上之無電電鐘單元,其係用來處理一基材,該 無電電鍍單元包含: 一基材支撐組件,用以支撐一基材;56. The electroless processing system of claim 53, wherein at least one of the first and second fluid processing units comprises: a fluid diffusion member having a substantially flat upper surface and a plurality of through-forming surfaces a fluid dispensing aperture; and a substrate support assembly configured to position a substrate 1 mm to 5 mm from the fluid diffusion member during an electroless deposition process. The portion of each of the parts is 57. The electroless treatment system of claim 53 is further provided with a source of heated fluid that communicates with the fluid dispensing orifices. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The temperature is controlled by the source of the treatment fluid. 59. A face-up electroless clock unit for processing a substrate, the electroless plating unit comprising: a substrate support assembly for supporting a substrate; 一流體擴散構件,具有一流體入口及一擴散板,其中加 熱流體流經该擴散板而接觸位於該基材支撐組件上之該基 材的一背側; 一蓋組件; 一流體處理區域,界定於該基材支撐組件與該蓋組件之 間;以及 一流體引入系統,用以提供處理流體至該流體處理區 域,其中該流體引入系統包含一或多個喷嘴,用以傳遞一 處理流體至該基材。a fluid diffusion member having a fluid inlet and a diffusion plate, wherein a heating fluid flows through the diffusion plate to contact a back side of the substrate on the substrate support assembly; a cover assembly; a fluid processing region, defining Between the substrate support assembly and the lid assembly; and a fluid introduction system for providing a treatment fluid to the fluid treatment region, wherein the fluid introduction system includes one or more nozzles for delivering a treatment fluid to the Substrate. 60.如申請專利範圍第59項所述之無電電鍍單元,其中該 基材支撐組件更包含: 數個基材支撐指狀件,用以將該基材支撐在該擴散板上 方,其中該等基材支撐指狀件適於藉由使用一支撐指狀件 馬達而旋轉。 61.如申請專利範圍第59項所述之無電電鍍單元,其中該 73 1355298 h修(更j正替換頁i 流體擴散構件更包含一加熱元件,其連通該擴散板。 62. 如申請專利範圍第59項所述之無電電鍍單元,其中該 流體擴散構件更包含: 一基板,位於該擴散板下方,且在該基板與該擴散板之 間提供一流體容積區域,該基板自該流體入口接收流體; 以及 一加熱元件,連通該基板。60. The electroless plating unit of claim 59, wherein the substrate support assembly further comprises: a plurality of substrate support fingers for supporting the substrate over the diffusion plate, wherein The substrate support fingers are adapted to be rotated by use of a support finger motor. 61. The electroless plating unit of claim 59, wherein the 73 1355298 h repair (more j positive replacement page i fluid diffusion member further comprises a heating element that communicates with the diffuser plate. 62. The electroless plating unit of claim 59, wherein the fluid diffusion member further comprises: a substrate below the diffusion plate, and providing a fluid volume region between the substrate and the diffusion plate, the substrate receiving from the fluid inlet a fluid; and a heating element that communicates with the substrate. 63. 如申請專利範圍第59項所述之無電電鍍單.元,其中該 流體引入系統更包含: 一流體傳遞臂,具有該至少一噴嘴沿著該流體傳遞臂設 置;以及 一流體傳遞臂馬達,其係用於在該無電電鍍單元之該流 體處理區域内樞轉該流體傳遞臂。63. The electroless plating unit according to claim 59, wherein the fluid introduction system further comprises: a fluid transfer arm having the at least one nozzle disposed along the fluid transfer arm; and a fluid transfer arm motor And for pivoting the fluid transfer arm within the fluid processing region of the electroless plating unit. 64.如申請專利範圍第59項所述之無電電鍍單元,其中該 流體引入系統更包含: 一氣體來源,連接一喷嘴,其中該氣體來源適於傳遞一 惰性氣體或一混有氫氣之惰性氣體到該喷嘴;以及 一流體來源,連接該喷嘴,其中該氣體來源及該流體來 源適於自該流體來源傳遞一處理流體至該基材表面。 65.如申請專利範圍第59項所述之無電電鍍單元,其中該 74 Γ355298 100. 7 曰叙更)正替換頁64. The electroless plating unit of claim 59, wherein the fluid introduction system further comprises: a gas source connected to a nozzle, wherein the gas source is adapted to deliver an inert gas or an inert gas mixed with hydrogen And to the nozzle; and a source of fluid connected to the nozzle, wherein the source of gas and the source of fluid are adapted to transfer a treatment fluid from the source of fluid to the surface of the substrate. 65. The electroless plating unit according to claim 59, wherein the 74 Γ 355298 100. 7 曰 ) )) replacement page 蓋組件包含: 一蓋组件馬達,用以相對於該基材支撐组件選擇性 高及降低該蓋組件。 66.如申請專利範圍第59項所述之無電電鍍單元,其 蓋組件更包含: 一照相機,用以於無電製程期間,確認該單元中之 材上的處理流體覆蓋。 67. 如申請專利範圍第66項所述之無電電鍍單元,其 照相機更包含: 一控制器,適於監控該照相機之輪出信號,以確保 材之該表面實質上由該處理流體覆蓋。 68. 如申請專利範圍第66項所述之無電電鍍單元,其 照相機係一紅外線照相機。 69. 如申請專利範圍第59項所述之無電電鍍單元,其 蓋組件更包含: 一頂部蓋構件;以及 一板,位於該頂部蓋構件下方,其中該頂部蓋構件 板一起形成一增壓室(plenum)。 70. 如申請專利範圍第69項所述之無電電鍍單元,其 地昇 中該 該基 中該 該基 中該 中該 及該 中該 75 1355298 ίου. 6. 1 7 年月曰修(更)正替換頁 板係由選自由陶瓷材料、聚乙烯及聚丙烯所組成之群组 t之一材料所製造。 71.如申請專利範圍第69項所述之無電電鍍單元,其中該 流體引入糸統更包含: 複數個噴嘴,置於該板中,各喷嘴自該流體引入管線接 收無電電鍍處理流體,並將該等無電電鍍處理流體傳遞進 入該流體處理區域。The lid assembly includes: a lid assembly motor for selectively selecting and lowering the lid assembly relative to the substrate support assembly. 66. The electroless plating unit of claim 59, wherein the lid assembly further comprises: a camera for confirming treatment fluid coverage on the material in the unit during the electroless process. 67. The electroless plating unit of claim 66, wherein the camera further comprises: a controller adapted to monitor the wheeling signal of the camera to ensure that the surface of the material is substantially covered by the processing fluid. 68. The electroless plating unit of claim 66, wherein the camera is an infrared camera. 69. The electroless plating unit of claim 59, wherein the lid assembly further comprises: a top cover member; and a plate located below the top cover member, wherein the top cover member plate together form a plenum (plenum). 70. The electroless plating unit according to claim 69, wherein the ground is raised in the base of the base and the 75 1355298 ίου. 6. 1 7 months repair (more) The positive replacement sheet is made of a material selected from the group consisting of ceramic materials, polyethylene, and polypropylene. 71. The electroless plating unit of claim 69, wherein the fluid introduction system further comprises: a plurality of nozzles disposed in the plate, each nozzle receiving an electroless plating treatment fluid from the fluid introduction line, and The electroless plating treatment fluid is delivered into the fluid treatment zone. 72. 如申請專利範圍第69項所述之無電電鍍單元,其中該 蓋組件更包含: 一真空管線,用來選擇性地施加負壓到該增壓室,以自 該板的一表面移走流體。 73. —種面朝上之無電電鍍單元,用來處理面朝上之一基 材,該無電電鍍單元包含: 一基材支撐組件,用以支撐一基材;The electroless plating unit of claim 69, wherein the cap assembly further comprises: a vacuum line for selectively applying a negative pressure to the plenum for removal from a surface of the plate fluid. 73. A face-up electroless plating unit for processing a substrate facing upwards, the electroless plating unit comprising: a substrate supporting component for supporting a substrate; 一流體擴散構件,具有一流體入口及一擴散板,其中加 熱流體流經該擴散板而接觸置於該基材支撐組件上之該基 材之一背側; 一蓋組件,其中該蓋組件包含: 一頂部蓋構件;以及 一板,其位於該頂部蓋構件下方,其中該頂部蓋構 件及該板一起形成一增壓室; 76 Γ355298 ________....— .· Ή 7 s#功正替换頁I 一流體處理區域,界定於該基材支撐組件與該蓋組件之 間;以及 一流體引入系統,連接該增壓室,以透過該增壓室及該 板提供一處理流體至該基材之該表面。a fluid diffusion member having a fluid inlet and a diffuser plate, wherein a heating fluid flows through the diffuser plate to contact a back side of one of the substrates disposed on the substrate support assembly; a cap assembly, wherein the cap assembly comprises : a top cover member; and a plate located below the top cover member, wherein the top cover member and the plate together form a plenum; 76 Γ355298 ________....-.· Ή 7 s# a fluid processing region defined between the substrate support assembly and the lid assembly; and a fluid introduction system coupled to the plenum for providing a processing fluid to the substrate through the plenum and the plate The surface. 7777
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