KR101109299B1 - Apparatus to improve wafer temperature uniformity for face-up wet processing - Google Patents

Abstract

Methods and apparatus are provided for controlling substrate temperature during an electroless deposition process. The interfacial device includes a deposition cell configured to support a substrate at a location above the fluid dispersion member. The heated fluid is dispersed from the fluid diffusion member and contacts the substrate back surface, thereby heating the substrate. The heated fluid is dispersed from the opening configured to maintain a constant temperature with respect to the substrate surface. The method includes flowing heated fluid through the diffusion member against the back side of the substrate in a configuration configured to generate a constant processing temperature for the front side of the substrate.

Description

A device for enhancing wafer temperature uniformity for face-up wet processing {APPARATUS TO IMPROVE WAFER TEMPERATURE UNIFORMITY FOR FACE-UP WET PROCESSING}

Embodiments of the present invention generally relate to apparatus and methods for controlling substrate temperature during fluid processing.

The semiconductor processing industry relies on several methods of depositing a conductive material on a substrate, such as, for example, a silicon wafer or a large area glass substrate. In particular, deposition methods such as physical vapor deposition, chemical vapor deposition, and electrochemical plating are commonly used to deposit conductive materials or metals on or within a substrate. Another deposition method used in the semiconductor processing industry is electroless plating. However, electroless plating techniques present a problem in yielding uniform deposition of conductive materials.

The problem with an electroless deposition process is that the process is quite temperature related, i.e., if one part of the substrate is hotter by 1 ° C than the other part of the substrate, the hotter part of the substrate is transferred to the colder part of the substrate. In comparison, the electroless deposition plating rate is substantially increased. This deposition rate difference in the hotter regions of the substrate causes uniformity variations and the like, so that electroless plating processes are generally not suitable for semiconductor processing. However, if substrate temperature can be properly controlled, electroless deposition can provide advantages for semiconductor processing techniques such as seed layer recovery, capping, feature filling, and the like.

Another problem with electroless deposition cells lies in achieving effective backside sealing. In general, electroless deposition chemistry includes surfactants and other components that tend to diffuse to the substrate backside and cause contamination and / or deposition on the substrate backside. As such, there is a need for an electroless deposition cell configured to control the substrate temperature in order to perform a uniform electroless deposition process and to prevent surfactants and other processing chemicals from contacting the substrate backside.

Embodiments of the present invention generally provide an electroless plating cell configured to control the temperature of the substrate during the electroless plating process through fluid flow to the substrate backside or non-manufacturing surface. Fluid flow can be used to prevent contaminants from reaching the substrate backside during the electroless process. In addition, since the substrate temperature is controlled by the temperature of the fluid in contact with the substrate backside, the processing cell of the present invention is configured to control the temperature, fluid flow rate, pattern and turbulence of the fluid in contact with the substrate backside.

Embodiments of the present invention also provide a fluid processing cell configured to control the temperature of a substrate. The cell includes a rotatable substrate support member positioned at a processing volume and a fluid dispersion member positioned over the substrate support member and configured to disperse the processing fluid onto a substrate positioned at the substrate support member. In general, the substrate support member comprises a heated or thermally non-conductive base member having a central fluid opening therein and a fluid diffusion member sealably located in the base member and forming a fluid volume with the base member, wherein the fluid The diffusion member includes a plurality of radially located bores formed through the fluid diffusion member.

Embodiments of the present invention also provide an electroless deposition cell. The deposition cell generally includes a cell body defining a processing volume and a rotatable substrate support member positioned at the processing volume. The substrate support member includes a fluid diffusion member in which a plurality of fluid dispersion bores are formed through the upper surface thereof and at least one substrate support arm extending upward over the top surface of the fluid diffusion member, wherein the plurality of bores are fluid diffusion members. Arranged in an annular pattern near the central axis of the at least one substrate support arm is configured to support the substrate in a parallel relationship at the top surface of the fluid diffusion member in a face up orientation. The deposition cell also includes a fluid dispersion nozzle configured to disperse the electroless solution on the substrate top surface. The cell may also include a shield that heats and regulates the environment on the substrate during deposition on top of the wafer. This shield has the dual purpose of environmental control and exhaust shielding.

Embodiments of the present invention also provide a method of controlling substrate temperature during a fluid processing sequence. The method is generally configured to support a substrate over a fluid diffusion member and positioning the substrate on a plurality of substrate support fingers in a parallel relationship, flowing heated fluid through the diffusion member and against the backside of the substrate. And dispersing the processing fluid in front of the substrate to perform the fluid processing step.

Embodiments of the present invention also provide a multi-zone heater integrated into a diffuser plate made of a thermally conductive material that can be used to further enhance temperature uniformity on the wafer surface.

BRIEF DESCRIPTION OF DRAWINGS To understand the features of the invention disclosed above, a more detailed description of the invention briefly described above is disclosed with reference to embodiments, and some embodiments are disclosed in the accompanying drawings. It is to be understood, however, that the appended drawings illustrate only typical embodiments of this invention and are not intended to limit the scope of the invention, which allows other equivalent effective embodiments.

1 is a top view of an exemplary processing platform configured to include one or more processing cells of the present invention.

2A is a cross-sectional view of an exemplary processing cell of the present invention.

2B is a cross-sectional view of another exemplary processing cell of the present invention.

3 is an enlarged cross-sectional view of the substrate support member of the exemplary processing cell shown in FIG. 2A.

4 is a detailed view of the periphery of the substrate support member shown in FIG. 3.

5 is a plan view of an embodiment of a fluid diffusion member of the present invention.

6 is a cross-sectional view of an optional fluid diffusion member of the present invention.

FIG. 7 is a top perspective view of the fluid diffusion member shown in FIG. 6.

8 is a diagram showing the relationship between the fluid flow rate to the back of the substrate and the temperature of the diffusion member and conventional plate of the present invention.

9 is a view showing a relationship between the substrate temperature and the distance from the center of the substrate for the three cases in the present invention.

1 illustrates an example processing platform 100 that may be used to perform an embodiment of the present invention. An example processing platform, which is a general semiconductor processing platform such as an electrochemical plating platform, includes a factory interface 130, for example, generally defined as a substrate mounting station. Factory interface 130 includes a substrate mounting station configured to contact a cassette 134 having a plurality of substrates. The robot 132 is located at the factory interface 130 and is configured to enter the substrate 126 provided in the cassette 134. In addition, the robot 132 extends from the ink tunnel 115 to the processing mainframe or platform 113. The position of the robot 132 is entered by the robot into the substrate cassette 134 to recover the substrate and into one of the processing cells 114, 116 located on the mainframe 113, or optionally to the annealing station 135. Transfer substrate 126. Similarly, the robot 132 may be used to recover the substrate from the processing cells 114, 116 or the annealing station 135 after the substrate processing sequence is complete. In this situation, the robot 132 transfers the substrate back to one of the cassettes 134 for removal from the platform 100.

The annealing station 135 generally comprises two station annealing chambers, adjacent to the substrate transfer robot 140 where the cooling plate 136 and the heating plate 137 are located, ie between two stations. Is located in. In general, the robot 140 is configured to move the substrate between each heating plate 137 and cooling plate 136. In addition, although the annealing chamber 135 is shown to be positioned to enter from the ink tunnel 115, embodiments of the present invention are not limited to any particular configuration or arrangement. As such, the annealing station 135 may be positioned in direct communication with the mainframe 113, that is, entered by the mainframe robot 120, or optionally the annealing station 135 may be connected to the mainframe 113. The anneal station 135 is accessible from the mainframe robot 120 or is directly in contact with the mainframe 113, although the annealing station may be located on the same system as the mainframe 113, or in a communicating position. It is not contacted. For example, as shown in FIG. 1, the annealing station 135 may be positioned to communicate directly with the ink tunnel 115 allowing entry into the mainframe 113, and the annealing chamber 135 may be located in the mainframe ( 113 is shown in communication.

The processing platform 100 also includes a transfer robot 120 centered (generally) on the processing mainframe 113. Robot 120 generally includes one or more arms / blades 122, 124 configured to support and transport the substrate. Additionally, the robot 120 and the accompanying blades 122, 124 may comprise a number of processing locations 102, 104, 106, 108, 110, 112, where the robot 120 is located on the mainframe 113. It is configured to extend, rotate and move vertically to insert and remove substrates with respect to 114, 116. Similarly, factory interface robot 132 moves linearly along a robot track extending from factory interface 130 to mainframe 113 while having the ability to rotate, extend, and move the substrate support blade vertically. Can be. In general, process locations 102, 104, 106, 108, 110, 112, 114, and 116 may be any number of processing cells used on a semiconductor processing plating platform. In particular, process locations include electrochemical plating cells, rinse cells, bevel clean cells, spin rinse dry cells, substrate surface cleaning cells (including collectively clean, rinse, and etch cells), electroless plating cells, It may be configured as a measurement inspection station and / or other processing cell that may be usefully used in connection with a plating platform. In general, each of the individual processing cells and robots are microprocessor-based control systems configured to receive input from the user and / or various sensors located on the system 100 and to properly control the operation of the system 100 in accordance with the input. Communicate with a process controller, which may be

2A shows a schematic cross-sectional view of one embodiment of a processing cell 200 of the present invention. A processing cell 200, which is a general semiconductor processing fluid processing cell configured to plate a conductive material on a substrate, is any of the processing cell locations 102, 104, 106, 108, 110, 112, 114, 116 shown in FIG. 1. It can be located in one. Optionally, the processing cell 200 can be operated as a standalone plating cell or in conjunction with another substrate processing platform. Processing cell 200 generally includes a processing compartment 202 that includes a top 204 (optional), a sidewall 206, and a bottom 207. Inside the sidewall 206 is an opening or access valve 208 that can be used to insert and remove the substrate from the processing compartment 202. In general, the rotatable substrate support 212 is positioned at the center of the lower member 207 of the processing cell 200 and optionally configured to lift the substrate 250 from the substrate support member 212. ). In general, the substrate support 212 is configured to receive the substrate 250 in a “face-up” position for processing, in which the lift pin assembly 218 is generally a substrate from the substrate support member 212. It is configured to engage with the substrate 250 backside or non-fabricated surface to lift it off.

The processing cell 200 also includes a fluid dispersion arm assembly 223 positioned on the substrate support member 212 and configured to disperse the processing fluid on the substrate 250. Fluid dispersion arm assembly 223 is generally in fluid communication with at least one fluid source 228 via at least one fluid supply valve 229. As such, a plurality of chemicals are mixed and supplied to the fluid dispersion arm assembly 223. In addition, the at least one fluid source 228 is in fluid communication with a heater 265 in fluid communication with a central opening (shown as 308 in FIG. 3) formed in the substrate support member 212. The heater 265, which may be any type of heater used to heat the fluid to the semiconductor processing cell, is configured to precisely control the temperature of the fluid being dispersed. In particular, the heater 265 is one or more temperature sensors (not shown) and / or one or more controllers configured to adjust the output temperature of the fluid dispersed by the heater 265 in accordance with, for example, an open loop or closed loop control system. Communicate with (not shown).

The fluid processing cell 200 also includes a fluid drain 227 located in the lower portion 207 of the processing cell 200. The drain 227 is in fluid communication with, for example, a fluid circulation or regeneration device 249 in which the collected processing fluid is freshly supplied or resupplied, such that the processing fluid is returned to one or more fluid sources 228. . In addition, the fluid processing cell 200 may include an exhaust port (not shown) that can be automatically controlled based on process conditions.

3 illustrates an exemplary substrate support member 212 in more detail. In general, the substrate support member 212 includes a base plate member 304 and a fluid diffusion member 302 is attached to the substrate support member 212. In general, the plurality of substrate supporting fingers 300 is positioned near the periphery of the fluid diffusion member 302 and is configured to support the substrate 250 on top of the fingers at an upper position of the fluid diffusion member 302. Optionally, the plurality of substrate support fingers 300 may be replaced with a continuous substrate support ring member (not shown). In configurations where a continuous ring is used, the lift pin assembly mentioned above may generally be used. However, in an embodiment where multiple fingers 300 are used, a robot blade may be inserted below the substrate and between the fingers 300 to lift and remove the substrate.

Base plate member 304 generally includes a solid disk shaped member having a fluid passageway 306 formed through its central portion or through another location on plate 304. The fluid diffusion member 302 is generally positioned in communication with the base plate member 304 in a configuration that forms a fluid volume 310 between the base plate member 304 and the fluid diffusion member 302. In general, the fluid volume 310 has a space between about 2 mm and about 15 mm between the fluid diffusion member 302 and the base plate 304, and larger or smaller spaces may be used as needed.

In addition, a fluid diffusion member 302 is formed through the fluid diffusion member and includes a plurality of bores / fluid passages 306 connecting the lower surface of the member and the fluid volume 310 to the upper surface of the member. Include. In general, the peripheral portion of the fluid diffusion member 302 is sealed in communication with the base plate member 304, so that fluid is injected into the fluid volume 310 by the fluid inlet 308 and formed in the diffusion member 302 Flow through the bore 306 results in an increase in the fluid pressure generated in the sealed fluid volume 310 by fluid injection.

The base plate 304 and the diffusion member 302 are made of ceramic material (fully pressed aluminum nitride, alumina Al ₂ O ₃ , silicon carbide (SiC)), polymer coated metal (Teflon ^™ polymer coated aluminum or stainless steel), polymer material Or other materials suitable for semiconductor fluid processing. Preferred polymer coatings or polymer materials are fluorinated polymers such as Tefzel (ETFE), halar (ECTFE), PFA, PTFE, FEP, PVDF and the like.

2B shows a cross-sectional view of another exemplary processing cell of the present invention. The processing cell 201 shown in FIG. 2B is similar to the processing cell 200 shown in FIG. 2A, so that reference numerals have been maintained for application. The processing cell 201 generally includes a peripheral shield 260 positioned on the substrate support member 212. Peripheral shield is configured to be movable vertically, such that shield 212 is mounted with a processing position (position where shield 260 is located adjacent to substrate 250 located on support fingers 402) / It may be moved between dismantling positions (eg, where the shield 260 is raised above the substrate support member 212 for entry into the processing volume 202 by a robot or shuttle). In the processing position, the peripheral shield 260 is provided such that the lower planar surface of the shield 260 is parallel to the substrate 250 and has a space between about 2 mm and about 15 mm from the substrate, for example, the shield 260. And positioned to create a fluid volume 264 between the substrate 250. Shield 260 may include fluid inlet 262 and outlet 263 that are in fluid communication with processing fluid source 228 and may be used to supply processing fluid to substrate surface and fluid volume 264. .

4 shows the periphery of the substrate support member shown in FIG. 3 in more detail. The substrate support fingers 300 are shown as having an elongated arm portion 407 extending inwardly and terminating at the support member 402. Generally, the support member 402 is configured to provide a support at the periphery of the substrate 250 to be processed, and the support member 402 includes a support post 403 configured to engage the substrate 250. In general, the support post 403 is made of a material that does not damage the substrate 250 positioned thereon so that the post 403 is amenable plastic that does not scratch the substrate 250 and It is made of a relatively soft material like any other non-metallic material. The arm portion 407 also includes an upstanding member 401 positioned radially outwardly around the substrate 250 and can be configured to maintain a fluid volume 404 on the substrate surface. The protruding member 401 operates in concert to center the substrate between each member 401 for processing. In this embodiment, the fluid flows upward through the holes 306 formed in the diffusion member 302 to the processing volume formed between the bottom surface of the substrate 250 and the top surface of the diffusion member 302 (arrow in FIG. 4). Marked "B"). Processing fluid then flows radially outward relative to the bottom surface of the substrate 250 (indicated by arrow “A” in FIG. 4). The outer periphery of the diffusion plate 302 includes a rise 415 configured to help remove bubbles from the area under the substrate.

In another embodiment of the present invention, the plurality of fingers may comprise a continuous ring support member. In this embodiment, the support post 403 can be replaced with a seal, such as an O-ring seal, with the plurality of fingers replaced by a continuous annular ring having an inner diameter smaller than the outer diameter of the substrate to be treated. Can be. In this embodiment, the fluid passing through the diffusion member 302 can be collected by first receiving means (not shown) located below the ring member 300, while on the top or manufacturing surface of the substrate 250. The processing fluid sprayed on can be collected by second receiving means (not shown) located above and / or outwardly of the ring member. This embodiment allows separation and regeneration of the respective fluids used to contact the front and back of the substrate.

5 shows a plan view of a substrate support member 212 embodiment of the present invention. In particular, FIG. 5 shows the top surface of the fluid diffusion member 302, that is, the surface of the fluid diffusion member 302 facing the substrate when the substrate is positioned on the support fingers 300 for processing. The upper surface is a plurality of radially located holes 306 in fluid communication with the fluid volume 310 located between the lower surface of the fluid diffusion member 302 and the upper surface of the base member 304 (of the surface center). Located outwards). As such, the heated fluid injected into the fluid volume 310 flows through each of the openings or holes 306 such that the fluid contacts the bottom of the substrate 250 or below the substrate 250, which is located on the fingers 300. The fluid then moves radially outward toward the periphery of the substrate 250. In addition, the holes 306 are located in an annular band near the generally centrally located fluid opening 306 located near the geometric center of the fluid diffusion member 302. The diameter of the holes 306 is constant with respect to the top surface. Optionally, the diameter of the holes 306 increases as the distance from the center of the top surface increases. For example, the holes 306 located closest to the center of the fluid diffusion member 302 are about 20% of the diameter of the outermost holes 306 on the fluid diffusion member 302 (which are disposed near the periphery). Have a diameter. Optionally, the size of the holes 306 remains constant as the radial band increases at an interval from the center of the diffusing member 302, but in this situation the number of holes 306 is the center of the diffusing member 302. It increases with each radial band away from it.

Regardless of the configuration of the holes 306, the purpose of positioning the holes 306 is to produce uniform heating of the substrate. As such, the holes are positioned to maintain a constant temperature as the heated fluid dispersed from the hole moves outward relative to the backside of the substrate surface. In particular, the positioning, space and size of each of the holes 306 is configured to generate a uniform temperature profile for the backside of the substrate 250 disposed for processing. This is generally the size of the fluid dispersion holes 306 by increasing the number of holes 306 for dispersing the heated fluid as the radial distance from the substrate center increases and / or as the distance from the substrate center increases. Is achieved by increasing. In one embodiment, this configuration results in a continuous and uniform flow of the heated fluid moving radially outward relative to the entire backside area of the substrate, thereby promoting uniform heating of the substrate by the fluid. In addition, the positioning of the holes is configured to maintain a turbulent flow of the heated fluid as it moves radially outward relative to the backside of the substrate. In particular, as the fluid moves radially outward from the center of the diffusion member, the fluid flows in layers. Laminar fluid has been shown to exhibit poor heat transfer properties as a result of the boundary layer forming the laminar flow. As such, the rings of each band or holes 306 generally allow additional heating fluid to be injected into the area between the diffusion member 302 and the substrate 250 at a location where the heating fluid loses the turbulent effect and becomes laminar. Is located. Further fluid injection increases the temperature while increasing the turbulence of the fluid.

In another embodiment of the present invention, the diffusion member 302 includes a heating assembly. The heating assembly generally includes one or more resistive heaters 502 located inside the diffusion member 302. The heater 502 may be configured as a plurality of heaters located in the center and located in the space between the bands of holes 306. In this configuration, each of the individual heaters 502 can be individually controlled to optimize temperature control over the substrate. In particular, the external heater 502 can be activated over the internal heater 502 so that the heaters can be used to supplement fluid cooling as the fluid moves towards the edge of the substrate 250. In addition, a number of temperature sensors may be performed in conjunction with the heater, and the controller may be used to monitor the temperature and adjust the power for each heater 502 to equalize the temperature with respect to the backside of the substrate 250. have. In another embodiment of the present invention, a heater may be used to support the substrate against the diffusion member 302. In particular, the heater can be used to preheat the substrate support assembly (base plate, diffusion member, etc.) before the heated fluid flows, and preheating minimizes heat loss in the substrate and further enhances temperature uniformity. .

With respect to temperature uniformity, embodiments of the present invention are performed in an exemplary processing cell 200 of the present invention, which is configured to perform an electroless copper deposition process. In this configuration, the fluid dispersion arm assembly 223 is configured to disperse the electroless plating solution on the substrate surface, which surface is located on the fingers 300 of the processing cell 200, thereby providing one or more Fluid source 228 includes the components of the electroless solution. Additionally, at least one fluid source 228 (the fluid source 228 is in fluid communication with the heater 265) is a deionized water (DI) source. In this configuration, the substrate is located in the cell 200, and the electroless solution is dispersed on the surface facing the substrate by the fluid dispersion arm assembly 223 and the heated DI is carried out by the fluid ejecting member 302. It is distributed about the substrate back side.

However, since the electroless deposition process is known to be temperature sensitive, in particular, since the electroless deposition rate is known to be temperature related, that is, in general, the electroless deposition rate generally increases exponentially with temperature. In particular, it has become important to homogeneous electroless deposition to maintain all regions of the substrate at a constant temperature during the electroless deposition process. As such, the positioning and sizing of the holes in relation to the fluid diffusion member 302 of the present invention, ie, the output of the heater 265 and / or the ability to control the heater of the diffusion member 302, may result in an electroless deposition process. It is used to control precisely. For example, the inventors have found that patterned annular or ring shaped holes 306 may increase the density of the holes 306 as the diameters of the rings increase, resulting in a substrate (eg, For example, it has been found that it provides a temperature deviation for the surface of a 200 mm substrate). In general, the space and size of the holes 306 increases as the area of the substrate moves radially outward from the center of the substrate, so that the volume of heated fluid supplied to cover or heat the area of the substrate increases proportionally, It is essentially determined to provide freshly heated fluid to all regions with respect to the substrate surface.

For example, FIG. 8 shows a flow rate of heated fluid on the back of the substrate using the embodiments of the invention shown in FIGS. 6 and 7 and a substantially planar plate, ie a tubolator 604 or fluid, on the back of the substrate. The relationship between the heated fluid temperature for the fluid processing opening with diffusion member 302 is shown. The graph shows that a configuration for heating a conventional fluid processing cell (a central fluid dispersion assembly that provides a heated fluid to the center of the substrate backside and allows the heated fluid to flow outwards) is less than the diffuser plate 302 of the present invention. It indicates that the plate exhibits substantially larger temperature deviations. In particular, the temperature delta for conventional cells is about 20 ° C., while the temperature delta for embodiments of the invention is less than about 2 ° C. Thus, the plot of FIG. 8 shows that the diffuser plate of the present invention reduces the maximum-minimum temperature and also relaxes the temperature uniformity from the flow rate.

Table 1 shows the arrangement of three exemplary holes of the present invention. The number of bands denotes an arrangement or circular band of holes away from the center of the diffusion plate and the radius represents the spacing (or radius) of the band from the center of the diffusion plate. The column of number of holes indicates how many holes or bores are included in a particular band. For each of the holes in the following cases, the holes or bore diameters tested were 2 mm.

Case 1  Number of bands Radius (mm) Number of holes One 25 12 2 50 18 3 75 24 4 100 30 5 125 36 Case 2 Number of bands Radius (mm) Number of holes One 5 5 2 25 12 3 75 24 4 125 36 Case 3 Number of bands Radius Number of holes One 0 One 2 25 6 3 50 12 4 75 18 5 125 30

TABLE 1

9 shows the relationship between the distance from the center of the diffusion member and the temperature for the three cases of the invention shown in Table 1. FIG. In particular, the data in FIG. 9 represents a temperature of less than about 1 ° C. from the center of the substrate to the edge (for a 300 mm substrate) using the embodiments of the invention shown in Case 2 and Case 3 of Table 1. FIG.

6 is a cross-sectional view of another fluid diffusion member of the present invention. Generally, the fluid diffusion member 600 includes a disk-shaped member formed through the central opening or the fluid passage 602. In general, the fluid passage is in fluid communication with a fluid source and / or a heater (not shown) configured to control the temperature of fluid dispersed from the passage. A plurality of tubulators 604 are positioned on the upper surface 603 of the diffusion member 600. In general, the tubulators 604 include an elevation extending upward from the top surface 603. Generally the tubulators have a height (extending above the upper surface 603) between about 1 mm and about 4 mm. As such, the substrate 250 is generally positioned for processing such that the bottom surface of the substrate is between about 1 mm and about 5 mm above the top of the tubulators 604. Also, the tubulators are generally arc-shaped in plane and disposed in a circular pattern near the central fluid opening 602, as shown in the top view of FIG. The tubulators are located near the ends of the tubulators 604 with the closest ends of the respective tubulators 604 forming a fluid gap 608 between the respective tubulators 604. To be located. In such a configuration, the circularly located tubulators 604 allow the fluid gap 608 in the first inner ring of the tubulators 604 to flow fluid through the fluid gap 608 of the tubulators 604. It is positioned to face up the tubulators 604 in a second ring of tubulators 604 located radially outwardly of the first inner ring.

In this configuration, the substrate is again supported by the fingers 300, for example at a location above the fluid diffusion member 600. The heated fluid is pumped through the opening 602 so that the substrate is positioned directly above the fluid diffusion member 600 such that the fluid exiting the opening 602 is directed outward toward the periphery of the substrate and the fluid diffusion member 600. Will flow in the direction. As a result of the positioning of the tubulators 604, an outward flow of fluid passes over at least two tubulators 604. When the fluid passes over the tubulators, turbulent flow is introduced into the fluid flow, ie outward laminar flow generally occurring near the fluid opening 602 causes the fluid to form the tubulators 604. Flowing above causes turbulence. The injection of turbulent flow into the heated fluid has been shown to provide a more uniform temperature variation over the surface of the substrate, thus promoting deposition uniformity in the electroless plating process as mentioned above.

In another embodiment of the present invention, the fluid diffusion member shown in FIG. 3 may be combined with the fluid diffusion member shown in FIG. In this embodiment, the fluid diffusion member having both the tubulators 604 and the radially located plurality of fluid dispersion holes 607 may be used in combination such that a substantially uniform temperature is generated for the substrate surface to be treated. In this embodiment shown in FIG. 7, the fluid dispersion holes 306 can be positioned at substantially any position between each of the tubulators, and can also be formed through the tubulator if desired.

While the embodiments of the invention have been described so far, other and different embodiments of the invention can be devised without departing from the basic spirit and spirit of the invention as defined by the following claims.

Claims (23)

A fluid processing cell comprising a rotatable substrate support member positioned in a processing volume, the rotatable substrate support member comprising: A base member having a central fluid opening formed therein; And The fluid diffusion member sealingly located in the base member and defining a fluid volume therebetween, wherein the fluid diffusion member is formed with a plurality of fluid delivery holes radially located through the fluid diffusion member; An annular substrate support ring surrounding the fluid diffusion member and extending inward over the fluid diffusion member; And A fluid dispersion member positioned over the fluid diffusion member and configured to disperse the processing fluid onto a substrate located on the substrate support member A fluid processing cell comprising a. The method of claim 1, And a fluid heater in fluid communication with the central fluid opening. The method of claim 2, The fluid heater is configured to supply heated fluid to the central fluid opening at a constant temperature. The method of claim 1, Wherein the rotatable substrate support member further comprises a plurality of inwardly extending substrate support fingers positioned to support the substrate in a parallel relationship above the fluid diffusion member. The method of claim 1, The radially located plurality of fluid delivery holes includes a plurality of rings arranged in a circle with respect to the holes, wherein the plurality of rings arranged in a circle as the rings increase in distance from the central axis of the fluid diffusion member. Fluid processing cell with increasing ring diameter. The method of claim 5, And the diameter of the fluid transfer holes increases with increasing distance from the central axis. The method of claim 1, Said fluid dispersing member having a fluid dispensing nozzle positioned on a distal end and comprising a pivoted fluid arm, said fluid arm in fluid communication with at least one temperature controlled electroless solution source. The method of claim 5, And the fluid diffusion member further comprises a plurality of heating members positioned in communication with the diffusion member, wherein the heating members are annularly positioned between the plurality of rings disposed in a circle relative to the holes. The method of claim 8, And the plurality of heating elements are individually controlled. A cell body defining a processing volume; A rotatable substrate support assembly positioned at the processing volume; A base plate disposed below the substrate support assembly, the base plate having at least one heating fluid supply hole through the base plate; And Processing fluid dispersion nozzle positioned to disperse the electroless solution on the upper surface of the substrate located on the substrate support assembly Electroless deposition cell comprising a. 11. The method of claim 10, And the base plate further comprises a plurality of tubulators located on an upper surface of the base plate. The method of claim 11, And the tubulators comprise elongate members having a height between 1 mm and 4 mm. 13. The method of claim 12, And the tubulators are positioned such that the long axes of the tubulators are generally in contact with the at least one heating fluid supply hole. 11. The method of claim 10, And further comprising a diffusion member sealably positioned in the base plate and defining a volume of fluid therebetween, the diffusion member having a plurality of heating fluid dispersion holes formed therethrough. Cell. The method of claim 14, And the plurality of heating fluid dispersion holes are positioned and sized such that a uniform fluid temperature is generated with respect to the upper surface of the diffusion member. The method of claim 14, And the at least one heating fluid supply hole is in fluid communication with a controlled source of heated fluid. The method of claim 14, And a plurality of heaters annularly located in the fluid diffusion member, wherein the plurality of heaters are individually controlled. A method of processing a substrate in a fluid processing cell, Positioning the substrate on an annular substrate support member having a portion surrounding the fluid diffusion member and extending inwardly above the fluid diffusion member; Flowing heated fluid against the backside of the substrate through the fluid diffusion member; Dispersing a processing fluid on the front surface of the substrate to perform a fluid processing; And Collecting the heated fluid and the processing fluid near the periphery of the substrate Substrate processing method comprising a. The method of claim 18, And controlling the temperature of the substrate by the heated fluid. The method of claim 19, Controlling the temperature of the substrate comprises controlling the flow rate and temperature of the heated fluid flowing through the diffusion member. The method of claim 20, Controlling the flow rate comprises positioning and sizing the fluid dispersion holes formed through the diffusion member to generate a constant temperature with respect to the backside of the substrate. The method of claim 21, Wherein said processing fluid comprises an electroless solution and said heated fluid comprises deionized water. The method of claim 20, Rotating the substrate support member during the dispersing process.

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