TW200525645A - Apparatus to improve wafer temperature uniformity for face-up wet processing - Google Patents

Apparatus to improve wafer temperature uniformity for face-up wet processing Download PDF

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Publication number
TW200525645A
TW200525645A TW093130104A TW93130104A TW200525645A TW 200525645 A TW200525645 A TW 200525645A TW 093130104 A TW093130104 A TW 093130104A TW 93130104 A TW93130104 A TW 93130104A TW 200525645 A TW200525645 A TW 200525645A
Authority
TW
Taiwan
Prior art keywords
substrate
liquid
liquid flow
patent application
item
Prior art date
Application number
TW093130104A
Other languages
Chinese (zh)
Other versions
TWI351725B (en
Inventor
Son T Nguyen
Gary J Rosen
Ian A Pancham
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/680,359 external-priority patent/US7311779B2/en
Priority claimed from US10/680,325 external-priority patent/US7223308B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200525645A publication Critical patent/TW200525645A/en
Application granted granted Critical
Publication of TWI351725B publication Critical patent/TWI351725B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C23C18/163—Supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1678—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/168—Control of temperature, e.g. temperature of bath, substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Weting (AREA)

Abstract

A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid diffusion member and contacts the backside of the substrate, thus heating the substrate. The heated fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side of the substrate.

Description

200525645 九、發明說明： 【發明所屬之技術領域】 本發明係主要關於-種控制材料的溫度之方法和步 5驟，尤指一種適用於無電電鍍處理時之方法和步驟。 【先前技術】 半導體產業利用各種方法將導電材料塗佈於一基板 j，例如石夕晶圓片或大面積的玻璃基板。廣為應用的技術 有物理氣相沈積法、化學氣相沈積法、以及電鍍法等。而 H)無電電鑛法則是另一種用於半導體製程中的方法，但此方 法卻有著導電材料不易均勻塗佈的缺點。 $無電電錢法的施行不易處乃是來自其對溫度敏感的影 I ’即使疋攝氏-度的差別，也會使基板上溫度較高處的 沈積速度明顯提高，而造成塗佈不均句。因此，本方法較 15 =被應用於半導體製程中。但是，如果基板溫度能被妥善 拴制…、私電鍍法則是相當適用於半導體製程中種子層修 補（seed layer repair)、覆蓋㈣卯㈣、與特徵填 _ filing)等製程。 …、電包鍍法的另一困難處則是基板背面的封蓋不易， 2〇且在化=處理時，欲用來塗佈的材料及其他成分易於擴散 、,J 土板月面，因而產生污染或在基板背面沈積。因此，目 =亟需一種無電電鍍祕，以解決上述基板之溫度控制而 塗佈均勻，並且可防止化學物在製程時接觸基板之背面。 200525645 【發明内容】 本發明係提供一種利用在基板背面以液流控制沈積時 溫度的無電電鍍反應池。此在基板背面的液流同時亦可防 止化學品擴散而產生污染。本發明更提供了上述當以液流 5 控制基板背面沈積溫度時，控制液流的溫度、流量、流向 和亂流的方法。 本發明亦提供一種具控制基板的溫度功能的無電電錢 用反應池。此反應池内含一能旋轉的基板承載元件，此基 板承載元件裝置於一反應池中，在基板承載元件上方有一 10 用以噴灑處理用劑於基板上的液體喷灑元件。基板承載元 件一般可具有一絕熱的基座，並且該基座可内含一能控制 内部流體空間，且具有許多放射狀分佈孔洞的液流擴散元 件。 本發明又提供一種無電電鍍用反應池，此反應池一般 15可包括一反應用的空間，並有一能旋轉的基板承載元件裝 置在其中。基板承載元件含有一具多個流體用孔洞的液流 擴散元件，且流體用孔洞係圍繞著元件的中心分佈，而液 流擴散元件與基板承載元件間以一個以上的支撐臂連結以 維持相互平行。反應池中另更可含有一液體噴嘴，以噴灑 2〇無電沈積之溶液到基板上表面。反應池也可加裝一可加熱 的上蓋於晶圓上方，以控制沈積時環境的溫度，此上蓋亦 具有控制基板上方之環境、以及防止蒸氣㈣的功能。 本發明另提供-種控制基板在以液體處^里步驟時的溫 度之方法。此方法大致上以液流擴散元件上方的多個基板 200525645 支撐點放置並固定基板，在基板正面進行處理溶液處理製 程步驟的同時，以加熱的液體沖刷基板的背面。 本發明也提供一多區塊的加熱器整合於導熱材料的液 流擴散板中，以進一步控制基板表面溫度的均一度。 5 為了進一步說明上述本發明之内容，下列以說明配合 圖示做更精確的表達。 【實施方式】 如圖1所示，為本發明一較佳實施例之一具有多個本發 10 明之無電電鍍用製程單元的工作平台100。此工作平台基本 上為一半導體工作平台，如電化學電鍍法的工作平台，其 中可包括一工廠介面130,其主要功用為運載基板。工廠介 面130包括一具有複數個基板儲存夾134連結的基板運載 站、一自動控制裝置132用以取用基板儲存夾134中的基板 15 I26。另外，自動控制裝置132也運行於連通管道115和工作 主基座（或平台）113間’自動控制裝置132因而能將基板126 從基板儲存夾134取出，並運送到工作主基座（平台）113中任 一製程單元114、116或是退火室135。同樣的自動控制裝置 132也能將處理完畢的基板126從製程單元H4、116或是退 2〇 火室135取出運送回基板儲存夾134以移出工作平台1〇〇。 退火室135基本上包括兩個退火熱處理房，其中冷卻盤 136與加熱盤137並列，另具有一自動控制裝置14〇用以運送 基板於冷卻盤136與加熱盤137之間。另外，雖然在本圖中 退火室135可連接在連通管道115旁，本發明並不被限制成 200525645 任何特定形式的配置，例如退火室135可直接連接於工作主 基座（平台）113,並以主基座之自動控制裝置12〇操作；或者 如圖1所示之退火室135可連接於工作主基座（平台）ιΐ3旁， 但各自分開操作。 5 工作平台100也具有一運輸用自動控制裝置120，主要 裝置於工作主基座（平台）113的中央。自動控制裝置12〇 一般 具有一個以上的機械手臂122、124用以載送基板。此外， 自動控制裝置120及其機械手臂122、124主要設計成可升 降、轉動、伸展，以能取送基板於工作主基座（平台）113中 10 的製程單元 102、1Q4、106、108、110、112、U4、116。 相同的，自動控制裝置132也可升降、轉動、伸展以能取送 基板，且此直線行進於工廠介面I%到工作主基座（平台）lU 的執道上。大致上製程單元l02、l04、a。l08、ll0、ll2、 114、116可以是任何數量及種類的半導體工作平台之反應 15 槽，例如化學電鍍槽、浸泡槽、清洗槽、旋轉乾燥槽、基 板表面清潔槽（整合浸泡槽、清洗槽及蝕刻槽）、無電電鍍 槽、品管檢查室及/或任何受益於平台整合的設施。每個工 作槽及自動控制裝置都可和中控單元1 1 1連線，且中控單元 111具多個微處理器及多工監測器並可依使用者程式化，以 2〇 適當的操控工作平台1 〇〇。 圖2a為本發明中一工作槽2〇〇的橫切面圖。工作槽2〇〇 一般可為一用以塗佈導電材料至基板的半導體製程用液體 工作槽’且可設置在圖1中任一個製程單元1〇2、1〇4、1〇6、 108、110、112、114、116中，也可單獨存在於一個工作平 200525645 台或連接另一個工作槽。工作槽200具一工作室202，其内 含上盍204(可不設置）、側壁206、及底座207。側壁206可設 置一用以移入或移去基板的活門208或開口。一具可旋轉的 基板承載元件212設於底座207的中央，且一用以自基板承 5 載元件212抬起基板250的針腳218(可不設置）。基板25〇以欲 處理面朝上的方式置於基板承載元件212,而針腳218則以 接觸基板250背面的方式移起基板承載元件212上的基板 250 〇 工作槽200另具有一液體喷灑臂223用以噴灑製程處理 10 溶液於基板承載元件212上之基板250，液體噴灑臂223以至 少一組的液體供給閥229連結至少一組的液體供給源228， 因此可提供多種處理溶液混合喷灑。至少一組的液體供給 源228可連接一加熱器265然後再連到基板承載元件212中 央的一孔洞（如圖三所示之308)。加熱器265可以是任一種用 15 以加熱半導體工作槽所用處理溶液的加熱器，在這裡可連 接多個溫度計（未示出）及控制器（未示出），以用來精確控制 一開放或一密閉迴圈控制系統之喷灑處理溶液的溫度。 工作槽200另在底座207更具有一液體排出口 227，其連 接一用以更新或添加收集的葯劑的液體回收裝置249，然後 20 再連結回到液體供給源228。工作槽200可另加裝一液體排 出口（未示出）來依據作業情形控制。 圖3為基板承載元件212的放大示意圖，基板承載元件 212包含了底盤元件3〇4及液流擴散元件302。多個基板承載 支架300可裝置於液流擴散元件302的邊緣，且用以承載基 200525645 板250於液流擴散元件302之上，此裝置亦可以環狀的支點 取代（未示出）。在設計上，環狀的支點是搭配上述針腳來移 動基板250，而設置基板承載支架300時則直接利用一自動 控制裝置以裝載移動基板250。 5 底盤元件304為一實心盤狀物，具有多個流體孔洞306 於中央或其他位置。底盤元件304與液流擴散元件302接合 而形成一流體容納空間3 10，底盤元件304與液流擴散元件 302間的空隙大致在2〜15mm之間，以形成此空間310,亦可 使用更大或更小的空隙。 10 液流擴散元件302更可具有多個流體孔洞306貫穿並連 通至流體容納空間310，而元件302的邊緣則和底盤元件304 接合密封，則引入的液體可由注入口 308進入空間310後， 在空間310達到一定壓力後流過孔洞306。 液流擴散元件302及底盤元件304可以為一陶瓷材料 15 (如 Aluminium Nitride, alumina A1203， silicon carbide(SiC))、一以聚合物包覆的金屬（如鐵氟龍包覆的鋁 或不銹鋼）、一聚合物材料或任何適合半導體製程的材料製 造。較為適用的聚合物材料可為氟化聚合物如 Tefzel(ETFE)、Halar(ECTFE)、PFA、PTFE、FEP、PVDF 20 等。 圖2b為本發明中另一種工作槽範例的部分放大示意 圖。工作槽201類似於圖2a中的工作槽200。工作槽201具有 一防護遮蓋260設置於基板承載元件212上方，防護遮蓋260 可垂直升起，以方便基板承載元件212可移動於一工作位置 200525645 (防護遮蓋260蓋於置放在基板承載支架4〇2的基板25〇之上） 到一裝卸位置（防護遮蓋26〇自基板承載元件212上方升 起’使自動控制裝置得以移入/移出工作槽内工作室2〇2的 基板）。防護遮蓋260至於工作位置時，其底部的平面到距 5 離基板的距離約為2〜15mm，形成一可容納液體的空間 264 °防護遮蓋260可内含液體注入孔262及流出孔263各 一，其用以聯結液體供給源228，並供應處理基板的處理溶 液〉谷液至基板表面與空間264。 圖4為圖3中所述基板承載元件的部分放大示意圖。基 10 板承載支架3〇〇可分解為一伸縮支臂4〇7、承載元件402。承 載元件402可用以支撐基板250邊緣部分，在兩者接觸處可 〇X支柱403，支柱4〇3的構成材料必須不會損傷其承載的 基板，如塑料或其他不會刮傷基板且不會被處理基板的處 理溶液侵蝕的材料。支臂4〇7亦可含有環繞基板25〇邊緣部 15分放射狀分佈的支點401，其用以維持一容納液體的空間 4〇4於基板表面。支點4〇1也具將基板固定於甲央的功能。 在本實施例中，溶液自液流擴散元件3〇2的孔洞3〇6(圖4中 之箭頭Β)流入基板25〇底部與裝置3〇2間的空間内，再放射 狀地延著基板250底部向邊源流（圖4中之箭頭句。在液流擴 散元件302的邊緣可設置一凸起物415以幫助去除基板25〇 底部的氣泡。 在本毛明的另-實她例中，多個支撐點可用以環狀的 組件代替。在此範例中支柱403可以—封口（如〇_ring)代替， 且多個支撐點可以連續的環狀支柱取代（環狀支柱的直徑 11 200525645 需小於基板的内直徑）。在此範例中流過液流擴散元件302 的液體可被位於基板承載支架300下的一接收裝置（未示出） 回收，而喷灑於基板表面的葯劑溶液則可被基板承載支架 300上/下的另一接收裝置（未示出）回收。本發明之此實施例 5 可分別回收用於基板上/下方的液體。200525645 IX. Description of the invention: [Technical field to which the invention belongs] The present invention mainly relates to a method and step 5 for controlling the temperature of a material, especially a method and step suitable for electroless plating treatment. [Previous Technology] The semiconductor industry uses various methods to apply a conductive material to a substrate j, such as a Shi Xi wafer or a large-area glass substrate. Widely used technologies include physical vapor deposition, chemical vapor deposition, and electroplating. H) The electroless power ore method is another method used in the semiconductor manufacturing process, but this method has the disadvantage that it is not easy to uniformly coat the conductive material. $ The difficulty of the implementation of the non-electricity electricity method is due to its temperature-sensitive effect I 'Even if the difference of 疋 Celsius-degrees, it will significantly increase the deposition rate at higher temperatures on the substrate, resulting in uneven coating . Therefore, this method is more applied to semiconductor processes. However, if the substrate temperature can be properly restrained ..., the private plating method is quite suitable for processes such as seed layer repair, overlaying, and feature filling in semiconductor processes. …. Another difficulty of the electroplating method is that the cover on the back of the substrate is not easy. During the chemical treatment, the materials and other components to be coated are easy to diffuse. Pollution or deposition on the back of the substrate. Therefore, the objective is to urgently need a kind of electroless plating to solve the above-mentioned substrate temperature control and uniform coating, and prevent chemicals from contacting the back surface of the substrate during the manufacturing process. 200525645 [Summary of the Invention] The present invention provides an electroless plating reaction cell that utilizes liquid flow to control the temperature during deposition on the back surface of a substrate. This liquid flow on the back of the substrate also prevents chemicals from spreading and causing pollution. The present invention further provides the method for controlling the temperature, flow rate, flow direction, and turbulence of the liquid flow when the deposition temperature on the back surface of the substrate is controlled by the liquid flow 5. The invention also provides a non-electricity electricity reaction cell with a function of controlling the temperature of the substrate. The reaction cell contains a rotatable substrate-bearing element. The substrate-bearing element is installed in a reaction cell. A liquid spraying element for spraying a treatment agent on the substrate is arranged above the substrate-bearing element. The substrate-bearing element may generally have an adiabatic pedestal, and the pedestal may contain a liquid flow diffusion element capable of controlling the internal fluid space and having a plurality of radially distributed holes. The present invention further provides a reaction cell for electroless plating. The reaction cell 15 may generally include a space for reaction, and a rotatable substrate-bearing component is arranged therein. The substrate carrying element contains a fluid diffusion element having a plurality of fluid holes, and the fluid holes are distributed around the center of the element, and the fluid diffusion element and the substrate carrying element are connected by one or more support arms to maintain parallel . The reaction cell may further include a liquid nozzle for spraying a solution of 20% electroless deposition onto the upper surface of the substrate. The reaction cell can also be equipped with a heatable cover above the wafer to control the temperature of the environment during deposition. This cover also has the function of controlling the environment above the substrate and preventing vapors from escaping. The present invention also provides a method for controlling the temperature of the substrate during the step of using a liquid. This method basically uses a plurality of substrates 200525645 support points above the liquid flow diffusing element to place and fix the substrate. While the processing solution processing step is performed on the front surface of the substrate, the back surface of the substrate is flushed with a heated liquid. The invention also provides a multi-block heater integrated in the liquid diffusion plate of thermally conductive material to further control the uniformity of the surface temperature of the substrate. 5 In order to further explain the content of the present invention described above, the following description is given in more precise terms with descriptions and illustrations. [Embodiment] As shown in FIG. 1, it is a working platform 100 having a plurality of process units for electroless plating according to the present invention, which is a preferred embodiment of the present invention. This work platform is basically a semiconductor work platform, such as the work platform of the electrochemical plating method, which may include a factory interface 130, whose main function is to carry the substrate. The factory interface 130 includes a substrate carrying station having a plurality of substrate storage clips 134 connected thereto, and an automatic control device 132 for accessing the substrates 15 I26 in the substrate storage clips 134. In addition, the automatic control device 132 also runs between the communication pipe 115 and the work main base (or platform) 113. The automatic control device 132 can therefore remove the substrate 126 from the substrate storage clip 134 and transport it to the work main base (platform). Any one of the process units 114, 116 or the annealing chamber 135. The same automatic control device 132 can also remove the processed substrate 126 from the processing unit H4, 116 or the retreat fire chamber 135 and transport it back to the substrate storage clip 134 to remove the work platform 100. The annealing chamber 135 basically includes two annealing heat treatment rooms, in which a cooling plate 136 and a heating plate 137 are juxtaposed, and an automatic control device 14 is used to transport the substrate between the cooling plate 136 and the heating plate 137. In addition, although the annealing chamber 135 can be connected next to the communication pipe 115 in the figure, the present invention is not limited to 200525645 any particular form of configuration, for example, the annealing chamber 135 can be directly connected to the working main base (platform) 113, and It is operated by the automatic control device 120 of the main base; or the annealing chamber 135 shown in FIG. 1 can be connected to the working main base (platform) 3, but is operated separately. 5 The work platform 100 also has an automatic control device 120 for transportation, which is mainly installed in the center of the work main base (platform) 113. The automatic control device 12 has generally more than one robot arm 122, 124 for carrying the substrate. In addition, the automatic control device 120 and its robot arms 122 and 124 are mainly designed to be able to lift, rotate, and extend so as to be able to take the substrates to the process units 102, 1Q4, 106, 108, and 110 of the working main base (platform) 113. , 112, U4, 116. Similarly, the automatic control device 132 can also be lifted, rotated, and extended to take the substrate, and this straight line travels from the factory interface I% to the work main base (platform) 1U. Roughly process units l02, l04, a. l08, ll0, ll2, 114, 116 can be the reaction of any number and type of semiconductor working platforms. 15 tanks, such as chemical plating tank, soaking tank, cleaning tank, spin drying tank, substrate surface cleaning tank (integrated immersion tank, cleaning tank) And etching tanks), electroless plating tanks, quality control inspection rooms, and / or any facility that benefits from platform integration. Each working slot and automatic control device can be connected to the central control unit 1 1 1, and the central control unit 111 has multiple microprocessors and multiplex monitors and can be programmed according to the user, with appropriate control by 20 Working platform 100. Figure 2a is a cross-sectional view of a working slot 200 in the present invention. The working tank 200 may generally be a liquid working tank for a semiconductor process for applying a conductive material to a substrate, and may be provided in any of the process units 102, 104, 106, 108, In 110, 112, 114, and 116, it can also exist in one work level 200525645 units or connected to another work slot. The working slot 200 is provided with a working chamber 202, which includes an upper sill 204 (optionally provided), a side wall 206, and a base 207. The side wall 206 may be provided with a shutter 208 or an opening for moving in or removing the substrate. A rotatable substrate carrying element 212 is disposed in the center of the base 207, and a pin 218 (optionally not provided) for lifting the substrate 250 from the substrate carrying element 212. The substrate 25 is placed on the substrate carrying member 212 with the side to be processed facing up, and the pins 218 move the substrate 250 on the substrate carrying member 212 so as to contact the back of the substrate 250. The working tank 200 also has a liquid spray arm 223 is used to spray and process 10 substrates 250 on the substrate supporting element 212. The liquid spraying arm 223 is connected to at least one set of liquid supply sources 228 by at least one set of liquid supply valves 229. Therefore, a plurality of processing solution mixed spraying can be provided. . At least one set of the liquid supply source 228 can be connected to a heater 265 and then to a hole in the center of the substrate carrying member 212 (see Fig. 3, 308). The heater 265 may be any heater that uses 15 to heat the processing solution used in the semiconductor working tank. Here, multiple thermometers (not shown) and controllers (not shown) can be connected to precisely control an open or A closed loop control system sprays the temperature of the treatment solution. The working tank 200 further has a liquid discharge port 227 on the base 207, which is connected to a liquid recovery device 249 for updating or adding the collected medicine, and then 20 is connected back to the liquid supply source 228. The working tank 200 may be additionally equipped with a liquid discharge port (not shown) to control according to the working situation. FIG. 3 is an enlarged schematic diagram of the substrate carrying element 212. The substrate carrying element 212 includes a chassis element 304 and a liquid flow diffusion element 302. Multiple substrate carrying brackets 300 can be installed on the edge of the liquid flow diffusion element 302 and used to support the substrate 200525645 on the liquid flow diffusion element 302. This device can also be replaced by a ring-shaped fulcrum (not shown). In design, the circular fulcrum is matched with the above-mentioned pins to move the substrate 250, and when the substrate carrying bracket 300 is set, an automatic control device is directly used to load the moving substrate 250. 5 The chassis element 304 is a solid disc with multiple fluid holes 306 at the center or other locations. The chassis element 304 and the liquid flow diffusing element 302 are joined to form a fluid containing space 3 10. The gap between the chassis element 304 and the liquid flow diffusing element 302 is approximately 2 to 15 mm to form this space 310, and a larger space can also be used Or smaller gaps. 10 The liquid flow diffusing element 302 may further have a plurality of fluid holes 306 penetrating and communicating with the fluid containing space 310, and the edge of the element 302 is jointed and sealed with the chassis element 304. The introduced liquid may enter the space 310 through the injection port 308, When the space 310 reaches a certain pressure, it flows through the hole 306. The liquid flow diffusion element 302 and the chassis element 304 may be a ceramic material 15 (such as Aluminium Nitride, alumina A1203, silicon carbide (SiC)), a polymer-coated metal (such as Teflon-coated aluminum or stainless steel) , A polymer material or any material suitable for semiconductor manufacturing. More suitable polymer materials can be fluorinated polymers such as Tefzel (ETFE), Halar (ECTFE), PFA, PTFE, FEP, PVDF 20 and so on. Fig. 2b is a partially enlarged schematic diagram of another working tank example in the present invention. The working slot 201 is similar to the working slot 200 in Fig. 2a. The working slot 201 has a protective cover 260 provided above the substrate carrying member 212, and the protective cover 260 can be raised vertically to facilitate the substrate carrying member 212 to be moved to a working position 200525645 (the protective cover 260 is placed on the substrate carrying bracket 4 〇2 on the substrate 25) to a loading and unloading position (the protective cover 26 rises from above the substrate carrying element 212 'to allow the automatic control device to move into / out of the substrate 2 in the working chamber 2 in the working tank). When the protective cover 260 is at the working position, the distance from the bottom of the plane to the distance from the substrate to the substrate is about 2 ~ 15mm, forming a space capable of containing liquids. It is used to connect the liquid supply source 228 and supply a processing solution for processing the substrate> valley to the substrate surface and the space 264. FIG. 4 is a partially enlarged schematic view of the substrate carrying element shown in FIG. 3. The base 10 board supporting bracket 300 can be decomposed into a telescopic arm 407 and a bearing element 402. The supporting element 402 can be used to support the edge portion of the substrate 250, and the pillar 403 can be located at the contact between the two. The constituent material of the pillar 403 must not damage the substrate it carries, such as plastic or other substrates that will not scratch the substrate Material eroded by the processing solution of the processing substrate. The arm 407 may also include a fulcrum 401 distributed radially around the edge of the substrate 25 and 15 minutes, which is used to maintain a space 404 containing the liquid on the surface of the substrate. The fulcrum 401 also has a function of fixing the substrate to the center. In this embodiment, the solution flows into the space between the bottom of the substrate 25 and the device 300 from the hole 3006 (arrow B in FIG. 4) of the liquid flow diffusion element 30, and then extends the substrate radially. The bottom of the 250 flows to the edge source (arrow sentence in FIG. 4). A protrusion 415 may be provided at the edge of the liquid flow diffusion element 302 to help remove bubbles at the bottom of the substrate 25. In another example of this Mao Ming, Multiple support points can be replaced by a ring-shaped component. In this example, the pillar 403 can be replaced by a seal (such as 〇_ring), and multiple support points can be replaced by a continuous ring-shaped pillar (the diameter of the ring-shaped pillar 11 200525645 requires Smaller than the inner diameter of the substrate). In this example, the liquid flowing through the liquid flow diffusion element 302 can be recovered by a receiving device (not shown) located under the substrate carrying bracket 300, and the agent solution sprayed on the surface of the substrate can be recovered. Another receiving device (not shown) on / under the substrate carrying bracket 300 is recovered. This embodiment 5 of the present invention can separately recover liquids used on / under the substrate.

圖5為本發明中基板承載元件212的平面示意圖，並特 別描述液流擴散元件302的上表面部分（具有支架3〇〇用來 承載基板的那一面）。此上表面另具有多個放射狀分佈的孔 洞306，且此孔洞306聯結到液流擴散元件302和底盤元件 10 304間的空間3 10 ’使導入空間3 10的加熱液體可以流進孔洞 306，並繼續接觸置於支架300上的基板25〇的底部後，再呈 放射狀流向基板外緣。更進一步說明，此孔洞3〇6一般可繞 著液流擴散元件302的中心呈環狀分佈，而每個孔洞3〇6的 孔洞大小皆可一致，或者越外緣的孔洞則越大。例如：最 15中心的孔洞是最外緣者的20%大小。當每個孔洞306的孔洞 大小皆一致時，則越外緣的環狀可分佈越多個孔洞。FIG. 5 is a schematic plan view of the substrate carrying member 212 in the present invention, and particularly describes the upper surface portion of the liquid flow diffusing member 302 (the side having the bracket 300 for carrying the substrate). This upper surface further has a plurality of radially distributed holes 306, and this hole 306 is connected to the space 3 10 'between the liquid flow diffusion element 302 and the chassis element 10 304 so that the heated liquid introduced into the space 3 10 can flow into the hole 306, After continuing to touch the bottom of the substrate 25 placed on the bracket 300, it flows radially to the outer edge of the substrate. To further explain, the holes 306 can generally be distributed in a ring around the center of the liquid flow diffusion element 302, and the size of each hole 306 can be the same, or the hole at the outer edge is larger. For example: The hole at the center of the most 15 is the size of the outermost 20%. When the hole size of each hole 306 is the same, the outer ring can distribute more holes.

本發明上述不同的孔洞306之分佈方法皆是為了基板 的均勻加熱，故其位置、間距、大小等設計都是為了使加 熱液流動於基板底部的過程中，能維持一定的溫度。越外 20 緣的孔洞越大或當每個孔洞306的孔洞大小皆一致時，則越 外緣的環狀分佈越多個孔洞就是為了達到上述的效果。在 一個範例中’上述的孔洞的配置可以使基板底部加熱液呈 放射狀且持續均勻的流向外緣，而使基板被均勻的加熱。 另外’孔洞的配置設計有一擾流的效果，因而避免當液體 12 200525645 呈放射狀流向邊緣時，液流平流化而造成導熱不均的缺 陷。在較外緣處的孔洞所流出的液流也可有擾流而加熱的 效果。如此，個別的環帶或孔洞306所形成之環形，一般可 使加熱液流通由液流擴散元件302與基板250之間所形成之 5 面積。當加熱液於此面積中，易於導致擾流喪失而平流化。 所以，可在導入加熱液時增加其擾流，並同時增加此溶液 之溫度。The different distribution methods of the holes 306 in the present invention are all for uniform heating of the substrate, so the design of its position, pitch, and size is to keep the heating liquid at a certain temperature during the process of the heating fluid flowing on the bottom of the substrate. The holes at the outer 20 edges are larger or when the hole size of each hole 306 is the same, then the more holes are distributed in the ring shape at the outer edges to achieve the above effect. In one example, the arrangement of the holes described above can cause the heating liquid at the bottom of the substrate to flow radially and uniformly to the outer edge, so that the substrate can be uniformly heated. In addition, the configuration of the holes has a turbulent effect, so that when the liquid 12 200525645 flows radially to the edge, the liquid flow is leveled and the defect of uneven heat conduction is avoided. The liquid flow flowing out of the holes at the outer edge can also have the effect of turbulence and heating. In this way, the loop formed by the individual endless belts or holes 306 can generally make the heating liquid flow through the area formed by the liquid flow diffusion element 302 and the substrate 250. When the heating liquid is in this area, it is easy to cause the loss of turbulence and advection. Therefore, it is possible to increase the turbulence when introducing the heating liquid, and at the same time increase the temperature of the solution.

在本發明的範例中，液流擴散元件302包含一加熱組 件，且該加熱組件可包含一或多個加熱器502。加熱器502 10 可有多個且設於複數個孔洞306所形成的環帶之間，並可各 自調整以達最佳化基板的加溫。例如較外側的加熱器502可 具有較高的功率，以平衡流至基板250外側較低溫的液體。 另外，亦可在加熱器週圍設置多個測溫器，以隨時監測溫 度並調控加熱器502的功率，使基板下方各處之溫度均勻。 15 在本發明的另一實施例中，亦可設置加熱器於液流擴散元 件302的基座（如底盤等），以先預熱基材承載組件（如··底 盤、液流擴散元件等），而減少熱能流失，並用以提高基板 加熱的均勻度。 為測試基板加熱的均勻度，本實施例係利用本發明一 20 實施例之工作槽200，進行一非電鍍式的鍍銅製程。在此實 施例中，溶液噴灑臂223可將處理溶液噴灑於放置在基板承 載支架300上的基板250表面，並使用一個以上的液體供給 源228供應處理基板的處理溶液。另外，再以一個以上液體 供給源228(液體供給源228皆可與加熱器256相連結）供應去 13 200525645 離子水（DI water)。本實施例中，一基材可於工作槽2〇〇内， 以洛液喷灑臂223將處理溶液喷灑於基板25〇之上表面，並 以加熱的去離子水藉由液流擴散元件3〇2來沖流基板25〇的 背面。 5 、由於無電電鍍的沈積製程（化學式）對溫度變化相當敏 感，其沈積速率通常隨溫度而呈現級數的成長，故製程時 維持基板表面的溫度均勻是相當重要的。因此，本發明液 流擴散元件302中，如··孔洞306的大小及位置、其連結於 外部的加熱益265、及/或液流擴散元件3〇2中的加熱器，都 10可用以精準控制一無電電鍍的沈積製程。例如，本發明者 發現以環狀或圈狀的孔洞3〇6並以越外緣的孔洞越大或當 每個孔洞306的孔洞大小皆一致，則越外緣的環狀分佈越多 個孔洞的作法可使直徑200MM的基板表面維持Oe8〇c〜2〇c 以内的溫差。原則上，孔洞3〇6的分佈與大小可取決於溶液 15自基板中心輻射向外所流出的面積，其加熱液流所增加之 流ϊ，是隨著覆蓋（或加熱）基板之面積增加，並可提供所需 求之加熱液流量，以將基板表面覆蓋完全。 圖8所示，係利用圖6、7之本發明實施例，關於一基板 月面其加熱液流之溫度與流速相對關係之示意圖，以及其 20與傳統工作槽（不具本發明中的擾流器604或液流擴散元件 中302)的比較。此傳統液流製程工作槽具有一中央處理溶 液喷灑孔’使加熱液流可從基板背面中央的出水孔向外流 出彳-疋此類傳統設計其底盤相較於本發明液流擴散元 件302 ’會產生較大的溫差，最高的溫差可達20°C，而本發 14 200525645 明只有2〇C以下的溫差。圖8顯示本發明之液流擴散元件可 明顯降低背面液流的溫差，使基板的溫度均勻。 表1可顯示本發明中的三種液流孔洞配置之方法，環帶 圈數係代表環狀或圓形孔洞自液流擴散元件中央到外圈的 號碼，半徑係表示不同環狀自擴散元件中心的距離，孔洞 數目係表不各圈環狀或圓形孔洞的數目。以下舉例之每個 孔洞’其孔洞或鑽孔的直徑大小為2mm。 表一In the example of the present invention, the liquid flow diffusion element 302 includes a heating element, and the heating element may include one or more heaters 502. The heaters 502 10 may be provided in a plurality and arranged between the endless belts formed by the plurality of holes 306, and may be individually adjusted to optimize the heating of the substrate. For example, the outer heater 502 may have a higher power to balance the lower temperature liquid flowing to the outside of the substrate 250. In addition, multiple temperature detectors can also be set around the heater to monitor the temperature at any time and regulate the power of the heater 502 to make the temperature uniform under the substrate. 15 In another embodiment of the present invention, a heater may also be provided on the base (such as a chassis, etc.) of the liquid flow diffusion element 302, so as to preheat the substrate carrying component (such as the chassis, the liquid flow diffusion element, etc.) first. ), While reducing heat loss, and used to improve the uniformity of substrate heating. In order to test the uniformity of the substrate heating, this embodiment uses the working tank 200 of the embodiment 20 of the present invention to perform an electroless copper plating process. In this embodiment, the solution spraying arm 223 can spray the processing solution on the surface of the substrate 250 placed on the substrate supporting bracket 300, and use more than one liquid supply source 228 to supply the processing solution for processing the substrate. In addition, more than one liquid supply source 228 (the liquid supply source 228 can be connected to the heater 256) is used to supply 13 200525645 DI water. In this embodiment, a substrate can be sprayed with a solution spraying arm 223 on the upper surface of the substrate 25 in the working tank 200, and the heated diffusion deionized water is used to pass the liquid flow diffusion element. 30 to the back surface of the substrate 25o. 5. As the deposition process (chemical formula) of electroless plating is quite sensitive to temperature changes, the deposition rate usually increases with the temperature. It is very important to maintain the uniform temperature of the substrate surface during the process. Therefore, in the liquid flow diffusion element 302 of the present invention, such as the size and position of the hole 306, its external heating element 265, and / or the heater in the liquid flow diffusion element 302, 10 can be used for precision Controls an electroless deposition process. For example, the inventors have found that the holes in the shape of a ring or a circle are 306 and the holes at the outer edges are larger or when the size of each hole 306 is the same, the more holes are distributed at the outer edges. The method can maintain the temperature difference between Oe80c ~ 20c on the surface of the substrate with a diameter of 200MM. In principle, the distribution and size of the holes 306 can depend on the area of the solution 15 radiating outward from the center of the substrate. The increase in the heating fluid flow is as the area covering (or heating) the substrate increases. And can provide the required heating fluid flow to completely cover the substrate surface. Figure 8 is a schematic diagram of the relative relationship between the temperature and the flow velocity of the heating liquid flow on the lunar surface of a substrate using the embodiment of the present invention shown in Figures 6 and 7, and its 20 and traditional working tank (without the turbulence in the present invention) Device 604 or 302). This traditional liquid flow process working tank has a central processing solution spraying hole 'allowing the heating liquid flow to flow out from the water outlet hole in the center of the back surface of the substrate 彳-疋 The traditional design of the chassis is compared with the liquid flow diffusion element 302 of the present invention. There will be a large temperature difference, the highest temperature difference can reach 20 ° C, while the hair 14 14 200525645 shows only a temperature difference of less than 20C. Fig. 8 shows that the liquid flow diffusing element of the present invention can significantly reduce the temperature difference of the liquid flow on the back surface and make the temperature of the substrate uniform. Table 1 shows the three methods of arranging liquid flow holes in the present invention. The number of loops represents the number of annular or circular holes from the center of the liquid diffusion element to the outer circle, and the radius indicates the center of different annular self-diffusion elements. The distance, the number of holes is the number of circular or circular holes in each circle. The diameter of each hole 'in the example below is 2mm. Table I

15 200525645 圖9為本發明表一所示之三種液流孔洞配置方法，其基 板背面之液體溫度與自擴散元件中心起算之距離相對關係 示意圖。由此可知，對於一 300mm的基板測試時，實施例 二及實施例三之孔洞配置方法可控制一基材中心到周圍的 5 温差低於攝氏一度。15 200525645 FIG. 9 is a schematic diagram showing the relative relationship between the liquid temperature on the back of the substrate and the distance from the center of the diffusing element, as shown in the three liquid flow hole arrangement methods shown in Table 1 of the present invention. It can be known that, for a 300mm substrate test, the hole arrangement method of Example 2 and Example 3 can control the temperature difference between the center of a substrate and the surrounding 5 to be lower than one degree Celsius.

圖6顯示本發明中另一種液流擴散元件的部份示意 圖。擴散元件600 —般可為一具有一中央開孔或液流管道 602的圓盤型元件。液流管道602 —般可連結一液流供應器 及/或一加熱器（圖未示），以控制流經液體的溫度。擴散元 10 件600的上表面603可具有複數個擾流物604，且擾流物604 係為上表面603所高起1〜4mm的凸起物。因此，當基板250 於製程進行時，擾流物604之頂部可距離上方的基板背面約 1〜5mm。如圖7所示，擾流物604之形狀如圖所示，其係平 面環繞於中央液流管道602之周圍。每環的擾流物604皆如 15 圖7所示之頭尾相對，並於彼此之間形成一液流溝608 ;而Fig. 6 shows a partial schematic view of another liquid flow diffusing element in the present invention. The diffusing element 600 may generally be a disc-type element having a central opening or a flow channel 602. The liquid flow pipe 602 can generally be connected to a liquid flow supplier and / or a heater (not shown) to control the temperature of the liquid flowing through. The upper surface 603 of the diffusive element 10 600 may have a plurality of spoilers 604, and the spoilers 604 are protrusions raised from the upper surface 603 by 1 to 4 mm. Therefore, when the substrate 250 is in the manufacturing process, the top of the spoiler 604 may be about 1 to 5 mm away from the rear surface of the substrate above. As shown in Fig. 7, the shape of the spoiler 604 is as shown in the figure, and its plane surrounds the central liquid flow pipe 602. The spoilers 604 of each ring are opposite to each other as shown in FIG. 7 and form a flow channel 608 between each other; and

各環擾流物604之間也距離一固定液流溝608。其中，擾流 物604之排列可使液體自液流管道602向外流時，都會先經 過第一内層環狀之擾流物604，再藉由液流溝608達至第二 層擾流物604，並向外輻射狀流開，進而達到擾流的效果。 20 在上述設置中，一基板可利用基板承載支架300達到支 撐目的，並位於液流擴散元件600的上方。當一加熱的液體 被加壓送入液流管道602後，此時加熱液會流入位於液流擴 散元件600上方的基板，且由中心的液流管道602向外放射 狀流向基板邊緣與液流擴散元件600。當液體向基板邊緣流 16 200525645 出時’至少會經過兩個擾流物604而產生擾流的效果，即由 液流管道602流出之平流化加熱液，可流經擾流物604後， 而產生液體擾流的現象。因此使基板自中心到外緣的溫差 更小而讓化學鍍膜的均勻度提昇。 5 圖3係顯示本發明中另一實施例液流擴散元件之部份 示意圖，並可配合圖6說明。本實施例之液流擴散元件皆具 有擾流物604以及多個放射狀分佈的液流孔洞6〇7，以使製 程中的基板表面其中心到外緣的溫差更小。如圖7所示，液There is also a fixed liquid flow groove 608 between each ring spoiler 604. Among them, the arrangement of the spoiler 604 allows the liquid to flow outward from the liquid flow pipe 602, and it will first pass through the first inner ring-shaped spoiler 604, and then reach the second layer of spoiler 604 through the flow channel 608 And radiate outwards to achieve the effect of turbulence. 20 In the above arrangement, a substrate can be supported by the substrate carrying bracket 300 and is located above the liquid flow diffusing element 600. When a heated liquid is sent into the liquid flow pipe 602 under pressure, the heating liquid will flow into the substrate above the liquid flow diffusion element 600, and the central liquid flow pipe 602 will flow radially outward to the edge of the substrate and the liquid flow. Diffusion element 600. When the liquid flows to the edge of the substrate 16 200525645, it will pass through at least two spoilers 604 and produce a turbulent effect, that is, the horizontal fluidized heating liquid flowing out of the liquid flow pipe 602 can flow through the spoiler 604, and The phenomenon of liquid turbulence. Therefore, the temperature difference from the center to the outer edge of the substrate is made smaller, and the uniformity of the electroless plating is improved. 5 FIG. 3 is a schematic diagram showing a part of a liquid flow diffusing element according to another embodiment of the present invention, and can be described with reference to FIG. 6. The liquid flow diffusing elements in this embodiment all have a spoiler 604 and a plurality of radially distributed liquid flow holes 607, so that the temperature difference from the center to the outer edge of the substrate surface in the process is smaller. As shown in Figure 7,

流孔洞306可分佈於擾流物之間任何理想的位置，亦可設在 10 擾流物之上。 上述範例僅係為了方便說明最實用而常見的情況，本 發明所主張之權利範圍自應以申請專利範圍所述之範圍和 精神為準，而非僅限於上述範例及圖示。 15 【圖式簡單說明】 圖1係本發明一較佳實施例之一具有多個本發明之無電電 鍵用製程單元的工作平台範例之平面圖。 圖2a係本發明一較佳實施例之無電電鍍用製程單元中一部 份的範例示意圖。 ° 20圖2b係本發明一較佳實施例之無電電鍍用製程單元中另一 部分的範例示意圖。 圖3係圖2b中本發明一較佳實施例之無電電鍍用製程單元 中基板基板承載元件的放大示意圖。 圖4係圖3中本發明一較佳實施例之無電電鍍用製程單元中 17 200525645The flow holes 306 can be distributed at any desired position between the spoilers, and can also be arranged above the spoilers. The above examples are only for the convenience of explaining the most practical and common situations. The scope of the rights claimed in the present invention should be based on the scope and spirit described in the scope of patent application, rather than being limited to the above examples and illustrations. 15 [Brief Description of the Drawings] FIG. 1 is a plan view of an example of a working platform having a plurality of process units for a keyless process according to the present invention, which is a preferred embodiment of the present invention. Fig. 2a is a schematic diagram showing an example of a part of a process unit for electroless plating according to a preferred embodiment of the present invention. ° 20 Fig. 2b is a schematic diagram of another example of a process unit for electroless plating according to a preferred embodiment of the present invention. Fig. 3 is an enlarged schematic view of a substrate substrate supporting element in a process unit for electroless plating in a preferred embodiment of the present invention shown in Fig. 2b. Fig. 4 shows a process unit for electroless plating in a preferred embodiment of the present invention shown in Fig. 3 17 200525645

基板基板承載元件的切面細_示H 圖5係本务明-較佳實施例之無電電鍵用製程單元令液流 擴散元件的平面示意圖。 圖6係本U &佳實施例之無電電鐘用製程單元中另一 5種液流擴散元件的切面示意圖。 圖7係圖6中本舍明一較佳實施例之無電電鍵用製程單元中 另一種液流擴散元件的上方平面之示意圖。 圖8係本毛明之無電電鑛用製程單元中基板基板承載元件 的/夜肌擴政元件與基板背面溫度和流體速率間相對關係之 _ 10 示意圖以及其與傳統裝置的比較。 圖9係本發明之無電電鐘用製程單元的三種範例中基板自 t心到外圍距離和溫度相對關係之示意圖。 【主要元件符號說明】 15 100 工作平台 115連通管道 13 0工薇介面 135退火室 Π1中控單元 113工作主基座 122、124機械手臂126基板 132自動控制裝置134基板儲存夾 136冷卻盤 137加熱盤Substrate The cutting plane of the substrate-bearing element is shown in detail. Figure 5 is a schematic plan view of a process unit for a non-electric key to make a liquid flow diffusion element according to a preferred embodiment of the present invention. Fig. 6 is a schematic cross-sectional view of another five kinds of liquid flow diffusion elements in a process unit for a non-electric clock according to the preferred U & FIG. 7 is a schematic diagram of an upper plane of another liquid flow diffusing element in the process unit for a non-electric key according to a preferred embodiment of the present invention shown in FIG. 6. FIG. Fig. 8 is a schematic diagram of the relative relationship between the temperature and fluid velocity of the backside of the substrate and the substrate expansion element of the substrate and the substrate in the electroless mining process unit of Maoming, and its comparison with the traditional device. FIG. 9 is a schematic diagram of the relative relationship between the distance from the substrate to the periphery and the temperature in three examples of the process unit for an electric clock according to the present invention. [Description of main component symbols] 15 100 work platform 115 communication pipe 13 0 industrial interface 135 annealing room Π1 central control unit 113 work main base 122, 124 robot arm 126 substrate 132 automatic control device 134 substrate storage clip 136 cooling tray 137 heating plate

102 、 104 、 106 、 108 、 110 、 112 、 114 、 14〇自動控制裝置200工作槽 116 製程單元 202工作室 204上蓋 206側壁 207底座 208活門 223液體噴灑臂 212基板承載元件218針腳 227液體排出口 228液體供給源 18 200525645102, 104, 106, 108, 110, 112, 114, and 140. Automatic control device 200 Working slot 116 Process unit 202 Working room 204 Upper cover 206 Side wall 207 Base 208 Valve 223 Liquid spray arm 212 Substrate carrying element 218 Pin 227 Liquid outlet 228 Liquid supply source 18 200525645

229 液體供給閥 250 基板 260 防護遮蓋 262 注入孔 263 流出？L 264 空間 265 加熱器 249 液體回收裝置 300 基板承載支架 302 液流擴散元件 304 底盤元件 306 孔洞 308 注入孔 310 流體容納空間 401 支點 402 基板承載支架 403 支柱 407 伸縮支臂 415 凸起物 502 加熱器 600 擴散元件 602 液流管道 603 上表面 604 擾流器 607 液流孔洞 608 液流溝229 Liquid supply valve 250 Base plate 260 Protective cover 262 Fill hole 263 Outflow? L 264 space 265 heater 249 liquid recovery device 300 substrate supporting bracket 302 liquid diffusion element 304 chassis element 306 hole 308 injection hole 310 fluid receiving space 401 fulcrum 402 substrate supporting bracket 403 pillar 407 telescopic arm 415 protrusion 502 heater 600 Diffusion element 602 Liquid pipe 603 Upper surface 604 Spoiler 607 Liquid hole 608 Liquid channel

1919

Claims (1)

200525645 十、申請專利範圍： 1 · 一種液體工作槽，係包括·· 一可旋轉之基板承載元件，其係置於一工作室内； 一基板加熱組件，内含··一具有一中央液流開孔的實 5 質平面底盤元件、與一液流擴散元件係密閉裝置於該底盤 上方而形成一流體空間，且該液流擴散元件上具有複數個 放射狀分佈的液流孔洞；以及 一液體噴灑元件，其係位於該基板承載元件上方，且 用以喷灑處理用劑於該基板承載元件上之一基板。 10 2·如申請專利範圍第1項之液體工作槽，更包括一液 體加熱器，其係與該中央液流開孔相連通。 3·如申請專利範圍第2項之液體工作槽，其中，該液 體加熱器係提供一已受熱且定溫的液體至該中央液流開 孔。 15 4·如申晴專利範圍第1項之液體工作槽，其中該可 旋轉之基板承載元件係包含複數個向中心延伸之基板承載 支架，其係用以支撐一基板，並使該基板與該液流擴散元 件呈平行狀。 5·如申請專利範圍第丄項之液體工作槽，其中該放射 20 狀分佈的液流孔洞包含複數個圈狀之孔洞環，且該環與該 液流擴散元件之一中央軸心越遠者，則該環之直徑越大。 6.如申請專利範圍第5項之液體工作槽，其中該放射 狀分佈的液流孔洞之直徑，係為距離該中央軸心越外緣的 孔洞直徑越大。 200525645 7·如申請專利範圍第1項之液體工作槽，其中該液體 喷灑元件包含一轉軸裝置的液體噴灑臂，且於該噴灑臂的 末端具有一液體喷嘴；該液體喷灑臂係連結到至少一具有 溫控無電處理溶液之液體供給源。 5 8·如申請專利範圍第5項之液體工作槽，其中該液流 擴散凡件更包含複數個加熱器，其係與該液流擴散元件相 連結；該加熱器單元係裝置於複數個圈狀分佈的孔洞環間。 9·如申請專利範圍第8項之液體工作槽，其中該加熱 係個別控制。 10 1〇· 一種無電電鍍之工作槽，其係包括·· I 一工作槽，係做為一製程工作室； 一可旋轉之基板承載元件係位於該工作室内； 底&元件，係位於該基板承載元件之下方，且具有 至少一個加熱液流供給孔洞；以及 15 一液體喷嘴，係將一無電處理用劑喷灑於該基板承載 元件上方之一基板之上表面。 11.如申請專利範圍第1〇項之工作槽，其中該底 盤元件上表面更包括複數個擾流物。 · 12·如申請專利範圍第u項之工作槽，其中該擾流物 2〇 的南度係介於1 mm〜4mm範圍之間。 13.如申請專利範圍第12項之工作槽，其中該擾流物 的長邊係相切於至少一加熱液流孔洞之圓周。 14·如申請專利範圍第1〇項之工作槽，更包含一液流 擴政tl件，其係密閉裝置於該底盤而形成一流體空間，且 21 200525645 該液流擴散元件上具有複數個貫穿的液流孔洞。 15·如申請專利範圍第14項之工作槽，其中該液流孔 /同的大小及位置皆為使液流擴散元件上方各處的液流溫度 均一而設計。 5 16·如申請專利範圍第14項之工作槽，其中該至少一 個液流孔洞係連通到一控溫的液流供應來源。 17·如申睛專利範圍第14項之工作槽，更包含複數個 加熱裔，係環狀設置於該液流擴散元件，且該等加熱器個 別被控制。 10 I8· 一種一基材於一鍍模工作槽之製程方法，其步驟 包括： 將該基板置於複數個基板承載支架上方，且該基板承 載支架係用以支撐該基板，以使該基板與其下方之一液流 擴散元件互相平行；導入一加熱的液流，由該液流擴散元 15 件通過到該基板的背面； 喷灑所需之一處理溶液於基板上表面，以進行一製程 步驟，以及 於該基板的邊緣，回收該製程用處理溶液和該加熱的 液流。 '、 20 19·如申請專利範圍第18項之製程方法，更包括一 + 驟係利用該加熱的液流而控制該基板的溫度。 ’ 20·如申請專利範圍第19項之製程方法，复 甘Λ ^、 具中控制該 基板的溫度係包括控制該加熱液流之流速與溫 ^ 又，且該加 熱液流係流通過該液流擴散元件。 22 200525645 21. 如申請專利範圍第20項之製程方法，其中控制該 流速之步驟係包括設置及調整該液流擴散元件上該液流孔 洞的大小及位置，以使該基板下方各處的溫度均一。 理 22. 如申請專利範圍第21項之製程方法， 用之該處理溶液係包括-不帶電的溶液，且；力二 係包括去離子水。 ⑨W加熱液流 23·如申請專利範圍第2〇項之 驟係於該喷灑的過程中，同時旋轉該基^㈣元更件包括一步200525645 10. Scope of patent application: 1 · A liquid working tank, including: · a rotatable substrate bearing element, which is placed in a working room; a substrate heating component, which contains a central liquid flow opening A solid 5-mass planar chassis element and a liquid flow diffusing element are enclosed above the chassis to form a fluid space, and the liquid diffusing element has a plurality of radially distributed liquid flow holes; and a liquid spray The component is a substrate which is located above the substrate carrying component and is used to spray a treatment agent on the substrate carrying component. 10 2. The liquid working tank according to item 1 of the scope of patent application, further comprising a liquid heater which is in communication with the central liquid flow opening. 3. The liquid working tank according to item 2 of the patent application scope, wherein the liquid heater provides a heated and constant temperature liquid to the central liquid flow opening. 15 4. The liquid working tank of item 1 in the scope of Shen Qing's patent, wherein the rotatable substrate-bearing element includes a plurality of substrate-bearing brackets extending toward the center, which are used to support a substrate and connect the substrate and the substrate. The liquid flow diffusion elements are parallel. 5. The liquid working tank according to item (1) of the scope of patent application, wherein the radiating 20-shaped liquid flow holes include a plurality of ring-shaped hole rings, and the ring is farther from the central axis of the liquid flow diffusing element. , The larger the diameter of the ring. 6. The liquid working tank according to item 5 of the scope of the patent application, wherein the diameter of the radially distributed flow holes is such that the diameter of the hole is larger as it is farther from the central axis. 200525645 7. The liquid working tank according to item 1 of the patent application scope, wherein the liquid spraying element includes a liquid spraying arm of a rotating shaft device, and a liquid nozzle is provided at the end of the spraying arm; the liquid spraying arm is connected to At least one liquid supply source having a temperature-controlled electroless treatment solution. 58. The liquid working tank according to item 5 of the patent application scope, wherein the liquid flow diffusion element further includes a plurality of heaters connected to the liquid flow diffusion element; the heater unit is installed in a plurality of circles. Like the distribution of holes between the rings. 9. The liquid working tank according to item 8 of the patent application scope, wherein the heating is controlled individually. 10 1〇 · An electroless plating work tank, including: · I a work tank, which is used as a process studio; a rotatable substrate bearing element is located in the work chamber; bottom & element, which is located in the Below the substrate bearing element, there is at least one heating liquid flow supply hole; and 15 a liquid nozzle, which sprays an electroless treatment agent on an upper surface of a substrate above the substrate bearing element. 11. The working slot according to item 10 of the patent application scope, wherein the upper surface of the chassis element further includes a plurality of spoilers. · 12. The working groove of item u in the patent application range, wherein the south of the spoiler 20 is in the range of 1 mm to 4 mm. 13. The working slot according to claim 12 in which the long side of the spoiler is tangent to the circumference of at least one heating fluid hole. 14. · If the working slot of item 10 of the scope of patent application includes a liquid flow expansion device, it is a closed device on the chassis to form a fluid space, and 21 200525645 the liquid flow diffusion element has a plurality of penetrations. Sap hole. 15. The working tank according to item 14 of the scope of patent application, wherein the size and position of the liquid flow holes are designed to make the temperature of the liquid flow uniformly above the liquid flow diffusion element. 5 16. The working tank according to item 14 of the scope of patent application, wherein the at least one liquid flow hole is connected to a temperature-controlled liquid flow supply source. 17. The working tank of item 14 in the scope of Shenyan's patent also includes a plurality of heating elements, which are arranged annularly on the liquid flow diffusion element, and each of these heaters is controlled. 10 I8 · A method for manufacturing a substrate in a plating working tank, the steps include: placing the substrate above a plurality of substrate supporting brackets, and the substrate supporting brackets are used to support the substrate so that the substrate and the substrate A lower flow diffusion element is parallel to each other; a heated liquid flow is introduced, and 15 pieces of the liquid flow diffusion element are passed to the back of the substrate; a required processing solution is sprayed on the upper surface of the substrate to perform a process step And recovering the processing solution for processing and the heated liquid stream at the edge of the substrate. ', 20 19. If the manufacturing method according to item 18 of the scope of patent application, further includes a step of controlling the temperature of the substrate by using the heated liquid flow. '20. If the process method of item 19 of the scope of patent application is applied, controlling the temperature of the substrate includes controlling the flow rate and temperature of the heating liquid flow, and the heating liquid flow passes through the liquid. Flow diffusion element. 22 200525645 21. The manufacturing method of item 20 in the scope of patent application, wherein the step of controlling the flow rate includes setting and adjusting the size and position of the liquid flow holes on the liquid flow diffusion element so as to make the temperature everywhere under the substrate Uniform. Principle 22. If the process method of the scope of patent application No. 21 is applied, the treatment solution used includes-an uncharged solution, and the force two system includes deionized water.加热 Wheating the liquid flow 23. If the procedure in the scope of patent application No. 20 is in the spraying process, rotating the element at the same time includes one step. 籲 23Appeal 23
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