CN1900358A - Apparatus for electroless deposition of metals onto semiconductor substrates - Google Patents
Apparatus for electroless deposition of metals onto semiconductor substrates Download PDFInfo
- Publication number
- CN1900358A CN1900358A CNA2006100985615A CN200610098561A CN1900358A CN 1900358 A CN1900358 A CN 1900358A CN A2006100985615 A CNA2006100985615 A CN A2006100985615A CN 200610098561 A CN200610098561 A CN 200610098561A CN 1900358 A CN1900358 A CN 1900358A
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- China
- Prior art keywords
- fluid
- substrate
- electroless
- distribution member
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- Prior art date
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- Pending
Links
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
Abstract
An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.
Description
Technical field
The embodiments of the invention relate generally to is used for the electroless deposition system of semiconductor processes.
Background technology
Metallization with inferior 100 nano-scale features is to be used for the basic technology that unicircuit manufacturing current and of future generation is handled.More specifically, (promptly such as ultra-large integrated form device, device with the unicircuit that comprises millions of logical gates) in and so on the device, usually be positioned at the multistage interconnected of these device cores by using electro-conductive material such as copper to fill the interconnect feature of large ratio of height to width (promptly greater than 25: 1), forming.For these size class, the conventional deposition such as chemical vapor deposition and physical vapor deposition can not be used for filling reliably interconnect feature.As a result, the tight of inferior 100 nano-scale large ratio of height to width interconnect features is filled for being used for handling in the unicircuit manufacturing, the spraying plating technology, i.e. electrochemistry plating and electroless plating have developed into promising treatment technology.In addition, for being used for deposition other layers such as tectum (capping layer), electrochemistry plating and electroless treatment have also developed into promising treatment technology.
But for electroless treatment, traditional electroless treatment system and method has faced some challenges, for example accurately controls depositing treatment and the ratio of defects in settled layer as a result.More specifically, can not on the surface of substrate, provide uniform temperature consistently because be used in unitary resistance heater of traditional electroless plating and thermolamp, and this is very crucial for the uniformity coefficient that electroless deposition is handled, so legacy system has been subjected to the influence of relatively poor underlayer temperature control.In addition, traditional electroless plating system does not also control the environment of electroless deposition chamber interior, has found that recently this can have substantial influence to ratio of defects.
And owing to the consideration to environment and cost of carry (CoO), desired is to obtain enough covering required liquid stream uniformly on the receiving surface of substrate by being reduced to, and reduces the waste of expensive electroless treatment chemicals.Because being delivered to the speed and the uniformity coefficient of substrate surface, electroless treatment solution can influence the depositing treatment result, so need to send equably the apparatus and method of various treatment soln.Also expectation be by contact with the supporting substrate member when liquid and substrate and when mobile betwixt on the back side at substrate use conduct and the convection heat transmitter, control underlayer temperature.
In addition, be used for the function and the efficient integrated platform that electroless deposition handles that can deposit homogeneous layer with minimal defects is not developed as yet.Equally, exist depositing the integrated electroless deposition need for equipment of homogeneous layer with minimal defects.
Summary of the invention
Embodiments of the invention provide a kind of electroless treatment chamber, and it is suitable for handling substrate, and described electroless treatment chamber comprises the platen assembly that is positioned in the described treatment zone, and described platen assembly comprises base member, and it has the fluid bore of formation by it; Fluid distribution member, it sealably navigates to described base member and has upstream side and the downstream side, and wherein said fluid distribution member has a plurality of fluid channels that fluid is communicated with between described upstream side and described downstream side; Fluid displacement, it is formed between the upstream side of described base member and described fluid distribution member; Feature portion, its downstream side from described fluid distribution member projects upwards first distance; With rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.
Embodiments of the invention also provide a kind of electroless treatment chamber, and it is suitable for handling substrate, and described electroless treatment chamber comprises the platen assembly that is positioned in the described treatment zone, and described platen assembly comprises base member, and it has the fluid bore of formation by it; Fluid distribution member, it sealably navigates to described base member and has upstream side and the downstream side; Fluid displacement, it is formed between the upstream side of described base member and described fluid distribution member; With a plurality of fluid channels, it is formed in the described fluid distribution member, wherein said a plurality of fluid channel fluid between the described upstream side of described fluid distribution member and described downstream side is communicated with, and at least one in described a plurality of fluid channel also comprises the first feature portion, and it is communicated with described upstream side fluid and has first cross-sectional area; With the second feature portion, it has second cross-sectional area, and wherein said first feature portion and the described second feature portion fluid are communicated with; With rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.
Embodiments of the invention also provide a kind of electroless treatment chamber, and it is suitable for handling substrate, and described electroless treatment chamber comprises rotatable substrate supports assembly, and it is positioned in the treatment zone of described electroless treatment chamber and has one or more substrate support surface; The edge dam abutment, it is positioned in the described treatment zone and has first surface, wherein said edge dam abutment and/or be positioned at substrate on described one or more substrate support surface and can be positioned between the edge of described first surface and described substrate and form the gap; And fluid source, it is located electroless treatment solution is delivered to the surface that is positioned the substrate on the described substrate supports.
Embodiments of the invention also provide a kind of electroless treatment chamber, it is suitable for handling substrate, described electroless treatment chamber comprises rotatable substrate supports assembly, it is positioned in the treatment zone of described electroless treatment chamber and has one or more substrate supports feature portion, its each all have substrate support surface; The basin body assembly, it is positioned in the described treatment zone and has the one or more walls that form fluid displacement, and described fluid displacement is suitable for taking in described one or more radially spaced substrate supports feature portion and is positioned at wherein fluid; Fluid source, it is communicated with described fluid displacement and the substrate fluid that is positioned on described one or more substrate support surface; And fluid heater, it is communicated with the described fluid thermal that is arranged in described fluid displacement.
Embodiments of the invention also provide a kind of electroless treatment chamber, it is suitable for handling substrate, described electroless treatment chamber comprises the platen assembly that is positioned in the treatment zone, described platen assembly comprises fluid distribution member, it has upstream side and downstream side, and a plurality of fluid channels that fluid is communicated with between described upstream side and described downstream side; First base member, it has the first-class body opening that forms by it, wherein said first base member sealably navigates to described fluid distribution member, and described first-class body opening be formed on described fluid distribution member in described a plurality of fluid channels at least one fluid be communicated with; With second base member, it has second fluid bore that forms by it, wherein said second base member sealably navigates to described fluid distribution member, and described second fluid bore be formed on described fluid distribution member in described a plurality of fluid channels at least one fluid be communicated with; With rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.
Description of drawings
For energy understood in detail above-mentioned feature of the present invention, reference example is carried out the of the present invention of above simplified summary illustrated that more specifically some of them embodiment is illustrated in the drawings.But, should be noted that accompanying drawing only illustrates exemplary embodiments of the present invention, and therefore should not be considered to the restriction of the scope of the invention, because the present invention can comprise the embodiment of other effects equivalent.
Fig. 1 is the vertical view of illustrative substrate treatment system.
Fig. 2 is exemplary electroless deposition system and the stereographic map that is included in the shroud in this lining treatment system.
Fig. 3 is the stereographic map of exemplary electroless deposition system under the state that has removed shroud.
Fig. 4 is the vertical sectional view of exemplary electroless deposition system and shroud.
Fig. 5 A is the vertical sectional view of exemplary fluid treatment bench.
Fig. 5 B is the sectional view that is positioned at the exemplary platen assembly in the fluid handling platform shown in Fig. 5 A.
Fig. 5 C is the vertical sectional view of amplification of the part of the exemplary platen assembly shown in Fig. 5 B.
Fig. 5 D is the vertical sectional view of amplification of a part of another embodiment that is positioned at the sectional view of the exemplary platen assembly in the fluid handling platform.
Fig. 5 E is the vertical sectional view that is positioned at the exemplary platen assembly in the fluid handling platform shown in Fig. 5 A.
Fig. 5 F is the vertical sectional view of exemplary fluid treatment bench.
Fig. 6 is the isometric view of illustrative substrate supporting component.
Fig. 7 is the vertical sectional view of exemplary fluid treatment bench.
Fig. 8 A is the vertical sectional view of the amplification of exemplary fluid treatment bench.
Fig. 8 B is the vertical sectional view that is positioned at the exemplary edge dam abutment in the fluid handling platform shown in Fig. 8 A.
Fig. 8 C is the sectional view that is positioned at another embodiment of the exemplary edge dam abutment in the fluid handling platform shown in Fig. 8 A.
Fig. 8 D is the sectional view of the exemplary edge dam abutment shown in Fig. 8 C, and wherein the edge dam abutment contacts with substrate.
Fig. 8 E is the vertical sectional view in finger that is positioned at the exemplary wafer maintenance assembly in the fluid handling platform shown in Fig. 8 A.
Fig. 8 F is the sectional view that is positioned at vertical another embodiment in finger of the exemplary wafer maintenance assembly in the fluid handling platform shown in Fig. 8 A.
Fig. 9 is that this treatment chamber has utilized the nozzle that is arranged on the indoor fluid dispense arm towards the vertical sectional view of last electroless treatment chamber.
Fig. 9 A is the vertical sectional view of electroless treatment chamber shown in Figure 9, and its substrate supports assembly is on its raised position.
Fig. 9 B is the vertical sectional view of optional embodiment of the electroless treatment chamber of Fig. 9.
Figure 10 is the horizontal cross of the electroless treatment chamber of Fig. 9.
Figure 11 is the vertical sectional view of the optional embodiment of electroless treatment chamber.
Figure 11 A is the sectional view of the electroless treatment chamber of Figure 11, and it has and is positioned at indoor gas flow diverter.
Figure 11 B is another vertical sectional view of the electroless treatment chamber of Figure 11 A, and wherein the gas flow diverter is in its raised position.
Figure 12 is the vertical sectional view of another embodiment of electroless treatment chamber, and wherein the chamber cap assembly is removable.
Figure 13 and 14 is the embodiment of treat fluid delivery system, comprises the sectional view of two embodiment that can be used as the nozzle that is connected with electroless treatment as herein described chamber.
Embodiment
Fig. 1 illustrates the embodiment of system 100.System 100 comprises factor interface 130, and it comprises and is configured to a plurality of substrate loading stages 134 of engaging with the substrate accommodation box.Factor interface automation 132 is positioned in the factor interface 130, and is constructed to obtain substrate 126 and substrate 126 transmission are come in and gone out and be positioned box on the substrate loading stage 134.Factor interface automation 132 also extends to factor interface 130 is connected in the connecting passage 115 of mainframe 113.The position of factor interface automation 132 allows visit substrate loading stage 134 obtaining substrate from it, and then substrate 126 is delivered to one of processing unit position 114,116 that is positioned on the mainframe 113, or is delivered to annealing chamber 135 alternatively.Similarly, factor interface automation 132 can be used for after the substrate processing EOS from the processing unit position 114,116 or annealing chamber 135 obtain substrates 126.In the case, factor interface automation 132 can be transmitted back to substrate 126 in one of box of being positioned on the substrate loading stage 134, removes from system 100 being used for.
Usually, processing unit position 102,104,106,108,110,112,114,116 can be any amount of processing unit that can use in lining treatment system.More specifically, processing unit or position can be configured to other processing units that electrochemistry is plated unit, cleaning unit, edge cleaning unit (bevelclean cell), rotation cleaning-drying unit, substrate surface cleaning unit (it always comprises cleaning, cleaning and etching unit), electroless plating unit (it comprises before the cleaning and cleans unit, back, activation unit (activation cell), sedimentation unit etc.), tolerance inspecting stand and/or can advantageously be used in combination with depositing treatment system and/or platform.
Each processing unit position 102,104,106,108,110,112,114,116 and automation 132,120 are communicated with central controller 111 usually, central controller 111 can be based on the Controlling System of microprocessor, its be configured to from the user and/or be positioned in the system 100 various transmitters both receive input, and according to input and/or the predetermined treatment process operation of Controlling System 100 suitably.Controller 111 comprises storing device (not shown) and CPU (not shown) usually, and its controlled device 111 is used for preserving where necessary various programs, handling procedure and steering routine.Storer is connected to CPU, and can be Local or Remote, one or more in the storer that obtains easily such as the number storage of random access storage device (RAM), read-only storage (ROM), floppy disk, hard disk or any other form.Software instruction and data can be encoded and be stored in the storer being used for CPU is sent instructions.Support the circuit (not shown) also to be connected to CPU, thereby support treater in a conventional manner.Support that circuit can comprise buffer memory well known in the art, power supply, clock circuit, input/output circuitry, subsystem etc.Can in treatment chamber, carry out those tasks by controller 111 readable programs (or computer instruction) judgements.Preferably, this program is by the readable software of treater 111, and comprises that instruction is to monitor and to control electroless treatment based on rule that defines and input data.
In addition, processing unit position 102,104,106,108,110,112,114,116 also is communicated with fluid delivery system such as following fluid drawing-in system 1200, and it is constructed to during handling required treat fluid is fed to each processing unit.Usually, by the one or more fluid delivery systems of central controller 111 controls.The U.S. Patent application No.10/438 that a kind of exemplary fluid delivery system can be that submit on May 14th, 2003, be entitled as the common transfer of " Multi-Chemistry ElectrochemicalProcessing System ", find in 624, here by reference its in full (not with the conflicting degree of the present invention in) it is incorporated herein.
As shown in Figure 1, in example system 100, processing unit position 102,104,106,108,110,112,114,116 can followingly be constructed.Processing unit position 114 and 116 can be configured in wet treatment bench and connecting passage 115, annealing chamber 135 and the factor interface 130 on mainframe 113 interface between the treatment bench of soma greatly.For example, the processing unit position 114,116 that is positioned at this interface can be rotation cleaning-drying unit and/or substrate cleaning unit.Processing unit position 114 and 116 each can comprise rotation cleaning-drying unit and the substrate cleaning unit that is in stacking construction.Alternatively, processing unit position 114 can comprise rotation cleaning-drying unit, and processing unit position 116 can comprise the substrate cleaning unit.In another embodiment, processing unit position 114 and 116 each can comprise the rotation cleaning-drying unit and the substrate cleaning unit of combination.In an embodiment of the present invention the unitary detailed description of exemplary rotation cleaning-drying of Shi Yonging can be that submit on October 6th, 2003, the U.S. Patent application No.10/680 that is entitled as the common transfer of " Spin Rinse Dry Cell ", find in 616, here by reference its in full (not with the conflicting degree of the present invention in) it is incorporated herein.
Processing unit position 106,108 can be configured to the substrate cleaning unit, and more specifically, processing unit position 106,108 can be configured to the edges of substrate cleaning unit, that is, be configured to that the circumference (with the optional back side) from substrate removes unnecessary sedimental unit after depositing treatment is finished.The U.S. Patent application No.10/826 that the exemplary edge cleaning unit is that submit on April 16th, 2004, be entitled as the common transfer of " IntegratedBevel Clean Chamber ", describe in 492, here by reference its in full (not with the conflicting degree of the present invention in) it is incorporated herein.Embodiments of the invention have also been conceived following situation: if desired, can save processing unit position 106,108 from system 100.In addition, processing unit position 106,108 can be configured to the electroless treatment unit or the unit right, it will be in this literary composition be further discussed.
Processing unit position 102,104 and 110,112 can be configured to the electroless treatment unit.Electroless treatment cell position 102,104,110,112 can be positioned to be handled in the shroud 302 on the mainframe 113, it is in each structure of handling two processing units in location in the shroud 302, promptly, processing unit position 110 and 112 can be handled in the shroud 302 first and be operated as first and second processing units, and processing unit position 102 and 104 can be operated as third and fourth processing unit in the second processing shroud 302.In addition, as mentioned above, embodiments of the invention have been conceived following situation: if desired, processing unit position 106 and 108 can have the processing shroud 302 that is positioned on the processing unit position 106,108, and these processing unit positions 106,108 can be configured to operate with processing unit position 102,104,110,112 similar modes.
Be positioned at the electroless treatment unit of handling in the shroud 302 and can comprise spraying plating or spraying plating support unit, for example, electrochemistry plating unit, electroless plating unit, electroless plating activation unit and/or substrate clean or cleaning unit.In exemplary electroless plating system 100, a fluid processing unit in every pair of unit in system 100 will be as activation unit, and this will be as the electroless deposition unit to another processing unit in the unit.This structure is replicated on the opposite side of system 100 in the relative processing shroud 302 usually.For example, though the invention is not restricted to any concrete structure, processing unit position 102 can be configured to the electroless plating activation unit, and processing unit position 104 can be configured to the electroless deposition unit.Similarly, the processing unit post-11.2 can be configured to the electroless plating activation unit, and processing unit position 110 can be configured to the electroless deposition unit.Usually under the control of central controller 111, operate independently of each other at each processing unit of handling in the shroud 302.
Fig. 2 is the stereographic map of exemplary electroless deposition system 100 and shroud 302, and it illustrates the example as processing unit position 110,112.For clarity sake, Fig. 2 has saved the hardware of processing unit position 110,112.Handling shroud 302 has defined around this controlled processing environment to processing unit position 110,112.Processing shroud 302 can comprise usually divides processing volume the central inwall 308 of the processing volume 312,313 that is two basic equidimensions equally.Though central inwall 308 is alternatively, when it was implemented, central inwall 308 was created in first processing volume 312 on the processing unit position 110 and second processing volume 313 on the processing unit post-11.2 usually.First and second processing volume 312 and 313 are by central inwall 308 basic isolation mutually; But, the bottom of central inwall 308 comprises recess or the groove 310 that is formed on wherein.Groove 310 is made certain size with accommodating substrates transmission shuttle 305, and it is positioned between processing unit position 110 and 112.Substrate transport shuttle 305 is constructed to (110 112) transmission substrate between each processing unit usually, and need not to use mainframe automation 120.Substrate transport shuttle 305 can be a vacuum chuck formula substrate support member, it is configured to rotating around a some pivot, make the far-end substrate supports end of substrate transport shuttle 305 on the direction of arrow 303 (see figure 1)s, move, between each processing unit position 110,112, to transmit substrate.Each of each processing volume 312,313 can also comprise access port 304, it is sealable, and is constructed to allow the automation such as mainframe automation 120 to visit each processing volume 312,313 to insert substrate to it or to remove substrate from it.
Each of each processing volume 312,313 also comprise the environment control unit 315 that is positioned on each processing volume 312,313 tops (as shown in Figure 2, for clarity sake, from handle the shroud state of contact and remove).Environment control unit 315 comprises the processing gas source (not shown) that is communicated with processing volume 312,313 fluids, and is constructed to processing gas is provided to each processing volume 312,313.Handle gas source and be constructed to usually inert gas flow is provided to each processing volume 312,313, described rare gas element is the mixture of for example nitrogen, helium, hydrogen, argon and/or these gases or is generally used for other gases in the semiconductor processes.Environment control unit 315 also comprises the micro particle filtering system, for example efficiency particulate air (HEPA) formula filtering system.The micro particle filtering system is used for removing particulate pollutant from the air-flow that enters processing volume 312,313.The micro particle filtering system also is used for the processing unit position of below is produced substantially linear and impartial processing gas stream.Environment control unit 315 can also comprise the equipment of the humidity that is configured to control in each processing volume 312,313, temperature, pressure etc.Central controller 111 can be used to regulate the operation of the miscellaneous part of environment control unit and discharge port 314 and system 100, controls oxygen level in the processing volume 312,313 with the input that receives according to treatment process or the transmitter from be positioned processing volume 312,313 or detector (not shown).
In operation, will handle gas by environment control unit 315 usually provides to processing volume 312,313.The step that processing gas is incorporated in each processing volume 312,313 is operated with the inside with rare gas element filling sealing treatment environment, thereby removes the gas that may make the electroless treatment deterioration such as oxygen of processing volume 312,313 inside.Usually, handle the position at gas source middle part of close each processing volume 312,313 above processing unit position 110,112, the top of close processing volume 312,313 or top will be handled gas and will be incorporated in the processing volume 312,313.Handling gas is incorporated in the processing volume 312,313 by HEPA formula filtering system usually, HEPA formula filtering system is constructed to the flow rate and the direction of minimized airborne particulates and Balance Treatment gas, makes gas 110,112 flow equably and with the successive flow rate towards the processing unit position.
Each of processing unit position 110,112 also comprises at least one discharge port 314 (perhaps if desired, the discharge port 314 of a plurality of radial locations), its be positioned as help from the processing gas of the gas supplying in the environment control unit 315 towards the processing unit position 110,112 evenly flow.Discharge port 314 can be positioned at just processed substrate below, each 110,112 places, processing unit position, or alternatively, discharge port 314 can be located radially outwardly from each processing unit position 110,112.Do not consider the location, discharge port 314 can be configured to help to handle evenly flowing of gas, helps the discharge from each processing unit position 110,112 of fluid and chemical evapn simultaneously alternatively.
The usually conduct that is used for rare gas element is fed to processing volume 312,313 comprises: with the flow rate supplying inert gas of (or more specifically, between about 12slm and the about 80slm) between about 10slm and the about 300slm.Usually, flow rate should be enough to minimize residual or leak in the processing volume and the gas volume of not expecting that produces.When each processing volume 312,313 is closed, when promptly access port 304 is closed, can reduce the flow rate of rare gas element.When access port 304 is opened, promptly handle shroud 302 or when handling shroud 302 and transfer out, increase and handle specific gas flow rate to produce gas from handling outwards flowing of shroud 302 when substrate is transmitted into.This outwards the flowing of gas is configured to prevent that surrounding gas (particularly, being oxygen) from entering the inside of handling shroud.In case access port 304 is closed, handle specific gas flow rate and can be reduced to the flow rate of allowing substrate processing.This flow rate can be kept for some time before the substrate processing initialize, make can remove any oxygen that enters from processing volume 312,313 before the initialization process sequence.Discharge port 314 and the collaborative work of processing gas supplying are to remove oxygen from processing volume 312,313.Discharge port 314 is communicated with standard manufacture equipment blowdown system usually, and is used for removing processing gas from processing volume 312,313.In optional embodiment of the present invention, processing volume 312,313 can comprise and is arranged as the vacuum pump that is communicated with processing volume 312,313 fluids.This vacuum pump can be used for further reducing the existence that processing volume 312,313 is not expected gas.Do not consider exhaust or pump structure, environment control unit 315 is configured to during the substrate processing oxygen level of processing volume 312,313 inside is being maintained below about 500ppm usually, more specifically, and below about 100ppm during the substrate processing.
The combination of environment control unit 315, discharge port 314 and central controller 111 also allows system 100 to control the oxygen level of processing volume 312,313 during the particular procedure step, one of them treatment step may need to be used for first oxygen level of optimum result, and second treatment step may need to be used for second oxygen level of optimum result, and this first and second oxygen level differs from one another.Except oxygen level, central controller 111 can also be configured to the particular procedure sequence is controlled other parameters of handling shroud, for example temperature, humidity, pressure etc. as required.These concrete parameters can be waited by well heater, water cooler, humidifier, moisture trap, vacuum pump, gas source, air filter, fan and change, it can be included in the environment control unit 315 all, be arranged as with processing volume 312,313 fluids and be communicated with, and by central controller 111 controls.
Processing volume 312,313 is made certain size usually to help electroless treatment, be that processing volume 312,313 is made certain size and made the gas supplying of environment control unit 315 can keep lower oxygen level (usually less than about 500ppm during treatment step, more specifically, less than about 100ppm), also allow enough volumes to support the evaporation of fluid solution in the volume simultaneously and can not make the saturated with vapor of processing volume 312,313.Consider the volume that is generally the headspace that prevents that saturated with vapor is required, the inventor has been found that the headspace that is used for each processing position 110,112 usually will be at about 1000in for 300mm substrate processing position
3With about 5000in
3Between.Simultaneously, being used for the headspace of processing volume 312,313 of the present invention when being configured to the 300mm substrate processing will be usually for example at about 1500in
3With about 5000in
3Between, or at about 2000in
3With about 4000in
3Between, or at about 2000in
3With about 3000in
3Between.Simultaneously, the top surface of the substrate from be positioned at one of processing unit position 110,112 to across in the vertical distance of (the so-called headspace of this volume) the top of the processing volume on the zone of this processing position 312,313 usually about 6 inches to about 40 inches high, and have diameter or the cross section of handling position 110,112.More specifically, the height of headspace can be between about 12 inches to about 36 inches, and the horizontal scale of processing volume 312,313 is usually near the circumference of dealing with cell position 110,112 separately, and it is made than the diameter of dealing with substrate just processed in the cell position 110,112 separately usually greater than the size between about 10% to about 50%.These yardsticks are important for the operation of apparatus of the present invention, because less processing volume reaches saturated with vapor easily, this has negative impact to electroless treatment.Simultaneously, the inventor determines that suitable headspace (transverse cross-sectional area in the processing position of extending from substrate to the distance at shroud top) is for preventing that saturated with vapor and relevant therewith defective from being considerable.
Though processing volume 312,313 is isolated from each other usually, groove 310 allows the gas in the processing volume to enter in the adjacent processing volume.Simultaneously, embodiments of the invention are set to that the pressure higher than adjacent processing volume is arranged in a processing volume.This pressure difference allows the control to crosstalking between each processing volume 312,313, because if keep this pressure difference, then the air-flow between the processing volume will be equidirectional and identical flow rate.Therefore, one in the processing unit can be configured to the deepfreeze unit, activation unit for example, and another processing unit can be configured to the heat-treated unit, for example electroless deposition unit.In this embodiment, the heat-treated unit is pressurized to more high pressure, and simultaneously, the heated fluid processing unit always makes gas flow in the colder fluid processing unit through groove 310.This structure prevents that colder processing unit from making the unitary temperature of heat-treated reduce, because heat-treated unit (that is electroless deposition unit) influenced by temperature fluctuation and produce defective than cooling fluid processing unit (that is activation unit) is easier usually.
In another embodiment, each processing volume 312,313 can be isolated from each other fully by central inwall 308,, removes substrate transport shuttle 305 and groove 310 that is.In this embodiment, mainframe automation 120 can be used for serving or visit each isolated processing volume 312,313 individually via each access port 304, and can operate to transmit substrate between each processing volume 312,313.
Fig. 3 is that exemplary deposition platform 400 is at the stereographic map that has removed from it under state of handling shroud 302.The embodiment of the processing unit shown in deposition table 400 ordinary representation Fig. 1 and 2.Processing unit shown in the deposition table 400 can be electroless plating activation platform 402 and electroless deposition platform 404.Substrate transport shuttle 305 is positioned between platform 402 and 404 and is configured to transmits substrate at each between 402,404.Each 402,404 comprises rotatable substrate supports assembly 414, its be constructed to support be used for handling at platform separately, towards the substrate 401 of upper position, that is, the treat surface of substrate 401 is towards the direction away from substrate supports assembly 414.In Fig. 3, the substrate 401 shown in platform 402 does not have on substrate supports assembly 414, and platform 404 have the substrate 401 that is supported on the substrate supports assembly 414 be illustrated in load and unloaded both states under each.Usually, each hardware construction of 402,404 will be identical; But embodiments of the invention are not limited to the structure that platform 402,404 has same hardware therein.For example, the present invention has conceived following situation: deposition table 404 can have at platen assembly 403 described herein, and electroless plating activation platform 402 can be configured to not have platen assembly 403.
Substrate supports assembly 414 (it is also shown in the sectional view of Fig. 4) comprises ring 411, and ring 411 has from the substrate supports of a plurality of vertical extensions of its extension and refers to 412.As among Fig. 3 and 404 places, processing position in the sectional view of Fig. 4 roughly shown in, substrate supports refers to that 412 generally include the edge that is configured to support substrates 410 or the last horizontal surface of groove.Substrate supports refers to that 412 can also comprise vertical post member 415, and it is orientated as substrate 401 is referred to centering on 412 in each support.Substrate supports assembly 414 also comprises lifting subassembly 413, it illustrates in Fig. 4 and will further describe in this article, lifting subassembly 413 is constructed to activate vertically encircling 411, thereby and support referred to that 412 activate vertically, with from each 402,404 loading and unloading substrate 401.
Each 402,404 each comprise dispense arm 406,408, it is constructed to during handling on pivot above the substrate 401 rotates with the front side or production surface that treat fluid are assigned to substrate 401.Fluid dispense arm 406,408 can also be configured to locate vertically with respect to substrate, promptly, the fluid distribution portion of dispense arm 406,408 can be positioned at apart between the about 0.5mm and about 30mm on the just processed surface of substrate 401, or more specifically, between about 5mm and the about 15mm, or between about 4mm and the about 10mm.If desired, the vertical and/or angle position of the fluid distribution portion of dispense arm 406,408 can be adjusted during the processing of substrate.Dispense arm 406,408 can comprise a more than fluid conduit systems therein, and simultaneously, dispense arm 406,408 can be configured to from it multiple treat fluid is assigned on the substrate 401.In one embodiment, will be connected to dispense arm 406 and/or 408 treat fluid is delivered to substrate 401 surfaces at one or more fluid drawing-in systems 1200 below in conjunction with Fig. 9 and 9A-B discussion.
Can comprise cleaning solution, cleaning soln, activated solution, electroless plating solution by the exemplary solution that dispense arm 406 or arm 408 distribute and can handle other required solution for supporting electroless deposition.In addition, the fluid conduit systems (not shown) in each dispense arm 406,408 can be heated/cool off with the fluid temperature (F.T.) of control by its distribution.Heating/cooling in the arm conduit provides advantage, that is, fluid is not free cooling before being assigned on the substrate.Therefore, the deposition uniformity coefficient of temperature is depended in this structure running with raising.In addition, in the present embodiment, the end of fluid dispense arm 406,408, that is, the position that treat fluid is assigned with is located movably.Simultaneously, can regulate in the fluid distribution portion of dispense arm 406,408 and the spacing between the substrate surface.This spacing running is with the sputter of minimization solution, and permission is controlled the location of the lip-deep fluid dispense operation of production of substrate.
Fig. 4 is the sectional view of exemplary a pair of treatment bench 402,404.The sectional view of Fig. 4 also shows as above according to the processing shroud 302 that Fig. 2 discussed, and it has defined first and second processing volume 312,313 of being separated by central inwall 308.Each treatment bench 402,404 comprises substrate processing platen assembly 403, and it is formed with the basic horizontal upper surface, and this basic horizontal upper surface is constructed to be positioned under the substrate during handling.Platen assembly 403 (it is also shown in the detailed section view of Fig. 5 A) always comprises the fluid distribution member 405 that is positioned on the substrate component 417, makes fluid distribution member 405 and substrate component 417 form fluid displacement 410 between the two at it.
With reference to figure 4 and 5A, fluid feed line 409 is arranged as with fluid displacement 410 and fluid distribution member 405 fluids and is communicated with.In one aspect, the fluid source 409B such as deionization (DI) water source or inert gas source is suitable for fluid sent by fluid feed line 409 and goes forward side by side in the fluid displacement 410.On the other hand, the fluid of sending from fluid source 409B can be heated through fluid heater 409A before it enters fluid displacement 410 by making this fluid.Fluid heater 409A is used to control the fluidic temperature that is delivered to fluid displacement 410.Fluid heater 409A can be the device that energy is given any kind of temperature-controlled fluid.Preferably, this well heater is jacketed type resistance heater (for example, well heater comes heating fluid by the inlet tube arm), rather than immersion heater (for example, plus heater element contact solution).The fluid heater 409A that is used in combination with controller 111 and temp probe (not shown) can be used to guarantee that the fluid temperature (F.T.) that enters fluid displacement 410 is in temperature required.
In one aspect, optionally traverse baffle 416 is attached to substrate component 417, and is positioned in the end and the fluid displacement 410 between the fluid distribution member 405 of fluid feed line 409.Traverse baffle 416 is adapted such that the temperature-controlled fluid of sending from fluid source 409B and fluid heater 409A is delivered to fluid distribution member 405 equably.
With reference to figure 5A, in when operation, the supported finger of substrate 401 412 is fastening and be positioned at vertically directly over the fluid distribution member 405.Space 450 between fluid distribution member 405 and substrate 401 is filled with from fluid source 409B and fluid heater 409A sends and pass through fluid feed line 409 and the temperature-controlled fluid of fluid distribution member 405 distribution.The back side of temperature-controlled fluid contact substrate 401 also transmits heat to it with heated substrate.In this embodiment, substrate is positioned as the relation parallel with the upper surface of fluid distribution member 405 usually, and be positioned at apart between the about 0.1mm of the upper surface of fluid distribution member 405 and the about 15mm, more specifically, between the about 0.5mm of the upper surface of fluid distribution member 405 and about 2mm.In one aspect, be attached to the support motor 443 (Fig. 4) of substrate supports assembly 414 by use, substrate 401 is with respect to pervasion component 405 with from its mobile temperature-controlled fluid rotation.Substrate 401 can help improving heat transfer between temperature-controlled fluid and the substrate 401 with respect to the rotation of fluid distribution member 405 and temperature-controlled fluid.
In another embodiment, the inside of platen assembly 403 can comprise well heater 433, and it is constructed to improve platen assembly 403 temperature to transmit heat to just processed substrate 401, and well heater 433 can be a resistance type heater.In one aspect, fluid supplying 409B and fluid heater 409A can be configured to contact at fluid and temperature-controlled fluid be sent through fluid feed line 409 before being positioned to support the substrate 401 that refers on 412.In this structure, well heater (for example, element 433 and 409A) can be communicated with central controller 111, makes central controller 111 can regulate the operation of each well heater with controlled temperature controlled fluid and just processed substrate temperature.
In one embodiment, fluid distribution member 405 can comprise the hole 407 between about 10 and about 200, and hole 407 has the diameter between about 0.5mm and the about 15mm usually, or more specifically, the diameter between about 0.7mm and the about 3mm.Hole 407 can be located vertically, or alternatively, with respect to the top surface 453 of fluid distribution member 405 with certain angle orientation.Hole 407 relatively vertical direction with the angle orientation between about 5 ° and about 45 °, to help fluid flow pattern outside on the surface of fluid distribution member 405.In addition, angled hole 407 can be configured to reduce fluid turbulence.
Fig. 5 B illustrates another embodiment of fluid distribution member 405, and it has a plurality of multiaspects hole 452 and dam abutment 451 is positioned to support the uniformity coefficient that temperature-controlled fluid distributes on the substrate surface that refers on 412 with raising.In one embodiment, shown in Fig. 5 B-D, multiaspect hole 452 has inlet part 452A, its diameter (label D among Fig. 5 C
1) less than diameter (the label D among Fig. 5 C of exit portion 452B
2).In this structure, the little inlet part 452A in multiaspect hole 452 is made into certain size and limits flowing of process multiaspect hole 452, to improve in the surface of fluid distribution member 405 and the mobile uniformity coefficient on the substrate.Exit portion 452B (label D
2) greater than inlet part 452A (label D
1) reducing the speed of the temperature-controlled fluid of reserving from exit portion 452B, and also reduced the top surface 453 (Fig. 5 C) of fluid distribution member 405 or the surface-area in downstream side.Have been found that the surface-area that reduces top surface 453 is favourable, this is because it has reduced the chance of the zone that formation does not contact with the mobile temperature-controlled fluid on the back side of substrate (or " doing the zone ").What be sure of is, these formation of " doing the zone " are subjected to the influence of ability of the top surface 453 of the surface tension of mobile temperature-controlled fluid and temperature-controlled fluid " moistening " substrate surface and/or fluid distribution member 405.In one aspect, desired is top surface 453 coarse surfaceness (R that turn between about 1.6 microns (μ m) to about 20 microns (μ m) with fluid distribution member 405
a), to improve the ability of fluid " moistening " top surface.If " do zone " enough greatly, then the temperature uniformity on the substrate will be subjected to being transferred to from temperature-controlled fluid the hot insufficient influence of substrate, thereby and influence the depositing treatment result.In one aspect, by using spray pearl or sandblasting to make top surface 453 roughenings.Though the use in the hole with " diameter " has been described in above discussion, other embodiment in multiaspect hole have conceived the use (for example, square, octagon etc.) of other shape area, and it can have by the constant of pervasion component 405 or the cross section of variation.According to an aspect of the present invention, the shape in multiaspect hole 452 and size can change on the surface of pervasion component 405 to realize required fluid covering, heat transfer profile and/or result.
Fig. 5 C also illustrates the enlarged view at the edge of the sectional view shown in Fig. 5 B.According to an aspect of platen assembly 403, the outer diameter D of dam abutment 451 and fluid distribution member 405
3(that is outside surface) is less than diameter (the label D of substrate
4).This structure is desired, is distributed in top surface (label W because it has minimized
1) on the chance of fluid contact temperature-controlled fluid, and will make and be distributed in the back side (the label W that composition in the fluid on the top surface avoids polluting substrate
2).
Fig. 5 C illustrates an embodiment of platen assembly 403, and it comprises with the equidistant multiaspect hole 452 at interval of distance " L ", and multiaspect hole 452 has aforesaid two features (inlet part 452A and exit portion 452B).Shown in Fig. 5 C, the inlet part 452A degree of depth is H
1, and the exit portion 452B degree of depth is H
2Fig. 5 D illustrates another embodiment of fluid distribution member 405, and it has such multiaspect hole 452, and multiaspect hole 452 has surface (label 454A-C) out of square mutually to have from inlet part 452A to exit portion 452B more demulcent transmission.For example, in one embodiment, it is favourable causing the angle of about 60 degree between the medullary ray in surperficial 454B and hole.Number of surfaces shown in Fig. 5 D (as directed 454A-C) and surface shape (that is, linear or non-linear (for example, index curve, quafric curve etc.)) and being not intended to limits the scope of the invention.Though Fig. 5 C-D illustrates the have coaxial feature multiaspect hole of (for example, these features have the common symmetry axis), other embodiment can have asymmetric feature, or do not have the common symmetry centre, and do not depart from base region of the present invention.
Fig. 5 E illustrates the isometric cross-sectional view of platen assembly 403, and it illustrates an embodiment of multiaspect hole pattern on fluid distribution member 405.In one embodiment, shown in Fig. 5 E, multiaspect hole 452 figures are arranged to square opening figure (for example, L
1Take advantage of L
1).In other embodiments, that fluid distribution member 405 can have is fan-shaped, quadrntnt or have the intensive figure of the sexangle of being arranged as (that is, single hole centered on circulation pattern) by six equidistant holes the hole array whole surface, rectangular opening figure, radial symmetry hole pattern and/or improve or be adjusted in temperature distribution on the substrate with other non-homogeneous hole pattern of the uniformity coefficient that improves the electroless deposition that on substrate surface, carries out and handle.
Fig. 5 F illustrates the sectional view of an embodiment of platen assembly 403, and it is divided into two zones with fluid displacement 410, one or more temperature-controlled fluid can be delivered in the space 450 between fluid distribution member 405 and the substrate 401 with different temperature.This structure can help being implemented in temperature distribution desired on the substrate, and therefore realizes desired electroless deposition result.In this structure, platen assembly 403 can comprise first area nextport hardware component NextPort 447 and second area nextport hardware component NextPort 448.First area nextport hardware component NextPort 447 can comprise first fluid feed line 446A, first fluid well heater 446B, first-class body source 446C and the first base member 446D.Second area nextport hardware component NextPort 448 can comprise the second fluid feed line 445A, the second fluid heater 445B, the second fluid source 445C and the second base member 445D.In the structure shown in Fig. 5 F, the second base member 445D is the base member 417 shown in Fig. 5 A and 7.In one aspect, first area nextport hardware component NextPort 447 is configured to first temperature-controlled fluid (label " B ") is delivered to and is positioned to support the substrate 401 that refers on 412, and second area nextport hardware component NextPort 448 is configured to second temperature-controlled fluid (label " A ") is delivered to and is positioned to support the substrate 401 that refers on 412, and wherein first and second temperature-controlled fluid are in differing temps.In another embodiment of the present invention, the inside of platen assembly 403 can comprise one or more resistance type heater (not shown), and it is suitable for improving the temperature of the second base member 445D of the first base member 446D of first area nextport hardware component NextPort 447 and/or second area nextport hardware component NextPort 448.In this structure, well heater (for example, resistance heater, element 445B, element 446B) be communicated with central controller 111, make central controller 111 can regulate the operation of each well heater with controlled temperature controlled fluid and just processed substrate temperature.Though Fig. 5 F illustrates an embodiment of the platen assembly 403 that comprises two zones, but in other embodiments of the invention, it can be divided into fluid displacement 410 the three or more zones that can control discretely with substrate fluid in contact temperature as expected.In one aspect, isolating heated fluid is fed to the different zones of substrate back via the hole 407 of independent or group, thereby the result as the temperature of the heated fluid in the location in each hole 407 and each hole 407 of flowing through provides the control to temperature fluctuation on the substrate.For example, this embodiment can be used for during handling the center of substrate or the temperature of edge annex generation rising.
In another embodiment of the present invention, fluid distribution member 405 can comprise and is configured to allow fluid from its porous material that flows through (for example porous ceramics).In one aspect, porous ceramic film material is an aluminum oxide material for example.In this embodiment, do not need hole 407 usually; But the inventor has conceived to combine with porous fluid distribution member 405 and has realized some holes 407, flows with enhance fluid when needed.In one aspect, fluid distribution member 405 can comprise porous plastic materials, for example polyethylene, polypropylene, PVDF, PTFE, Teflon or other compatible porous plastic materials.Plastic material with water-wetted surface can help promoting " moistening " on fluid distribution member 405 surfaces.
In one embodiment, fluid distribution member 405 is designed to have from about 0.1 micron pore to about 500 micro-meter scales.Because the fluid flow resistance by fluid distribution member 405 is a fluid the flow through function of distance of streaming fluid pervasion component 405, so vertically highly can being changed of fluid distribution member 405 so that required fluid flow characteristics to be provided.
With reference to figure 4 and 7, the processing of the substrate orientation that will be used to handle relates to moves lifting subassembly 413 between " loaded " position and processing position.In the left treatment bench 402 of Fig. 4, lifting subassembly 413 is shown on the " loaded " position, and this lifting subassembly refers to that 412 extend in above the acquisition loop 418 make supporting on the vertical position.On this position, dispense arm 406 refers to above in the of 412 vertically at interval to allow the loading of substrate 401 in support.Dispense arm 406 (with other fluid dispense arm of electroless deposition system) comprises that telescopically takes in the fixing base member 426 of arm member 425.CD-ROM drive motor make to go up arm member 425 with respect to base member 426 telescopic movings to regulate and distribute the vertical position of arm 406.Substrate 401 is positioned to support by mainframe automation 120 or substrate transport shuttle 305 and refers to 412 tops, then supports to refer to that 412 can be activated vertically to remove substrate 401 from each automation 120/ shuttle 305.In case substrate 401 by the support of automation 120/ shuttle 305 tops refer to 412 support, then automation 120/ shuttle 305 can remove from substrate 401 belows, refers to that 412 can drop to and handle on the position and support.
In the right treatment bench 404 of Fig. 4, lifting subassembly 413 is shown in to be handled on the position, and this lifting subassembly 413 is orientated as vertically to make to support and refer to that 412 are positioned near one of acquisition loop 418,419 vertical position place with substrate 401.Shown in the treatment bench 404 of Fig. 4, to handle on the position, fluid dispense arm 408 descends and is positioned near the upper surface of substrate 401.Lifting subassembly 413 is activated vertically by power lifting bolt assembly 427 usually, the parts that power hoisting screw assembly 427 is constructed to activate lifting subassembly 413 vertically and is attached to it.More specifically, the bottom of fluid processing unit is attached to lifting subassembly 413 and collaborative mobile with it.The bottom of processing unit comprise substantially substrate supports assembly 414 (it comprise support refer to 412 and ring 411), staggered wall 424 and discharge port 314 down.
With reference to figure 4 and 7, in one embodiment, platen assembly 403 is maintained fixed and does not move together with the parts of lifting subassembly 413 (for example, support refer to 412, ring 411).In this structure, the base plate supports 442 that is connected to substrate component 417 and fluid distribution member 405 is installed to mainframe 113 by one or more structural support (not shown).So in this embodiment, not translation when base plate supports 442, substrate component 417 and fluid distribution member 405 promote substrate supports assembly 414 in substrate lifting member 413 is not rotated when supporting motor 443 rotation substrate supports assemblies 414.In one aspect, substrate supports assembly 414 uses one or more bearings (not shown, see the element 1054A-B of Fig. 9) be registered to base plate supports 442, described one or more bearings also support and guide the parts of substrate supports assembly 414 with respect to base plate supports 442.Because need 405 rotations of substrate component 417 and fluid distribution member will require to use usually unreliable and can produce the rotating fluid sealing (not shown) of particulate, this may damage the production performance of equipment, so this embodiment is favourable.In one aspect, base plate supports 442 is also held electrical lead (not shown) and one or more fluid feed line 409 (Fig. 5 A and 7).
With reference to figure 6, substrate supports assembly 414 comprise usually support refer to 412, vertically post member 415, substrate support surface 415A and encircle 411.The substrate that is placed on the substrate support surface 415A is grasped or clamping by vertical post member 415.In one aspect of the invention, substrate supports assembly 414 is designed so that the thermal expansion of various parts will can not influence the performance that 414 clampings of substrate supports assembly are shelved on the substrate on the substrate support surface 415A.The thermal expansion of substrate supports assembly 414 may cause being placed on the dislocation and/or the damage of the substrate between the vertical post member 415.A method that reduces thermal expansion is to use the material (for example, tungsten, aluminium or norbide) with relatively low thermel expansion coefficient to come design substrate supporting component 414.On the other hand, ring 411 can be designed as and has energy minimization and support and to refer to 412 and the vertical geometry that moves of post member 415.
With reference to figure 4 and 7, the bottom of each all comprises a plurality of staggered wall assemblies 422 in each treatment bench 402,404.Staggered wall assembly 422 is constructed to and lifting subassembly 413 moves between the processing position shown in the position 404 of the " loaded " position shown in the position 402 of Fig. 4 and Fig. 4 synergistically.Staggered wall assembly 422 generally includes the following staggered wall 424 that is attached to the staggered wall 423 of going up of mainframe 113 rigidly and is attached to lifting subassembly 413 and is configured to therewith move.Down staggered wall 424 (particularly, locate the most close interior unitary a pair of staggered wall 424) can be filled with the fluid such as deionized water, and its running comes the bottom of encapsulation process platform 402,404 with the environmental externality from sealed environment.For example, deionized water is fed to down space between the staggered wall 424 constantly by traditional " dripping " mechanism usually.The use of the staggered wall assembly 422 of fluid sealing allows treatment bench 402,404 of the present invention to form sealing reliably, and also goes except when structure rotation and the needs that seal with single sealing 428 when moving with linear mode.In tradition is used, use sealing member usually as rotation and linear sealing, it is positioned on the public guide shaft.Staggered wall assembly 422 allows sealing 428 as shown in Figure 7 only to be used as rotary seal, rather than rotary seal and the vertically combination of slipper seal, and the latter often is difficult to operate in fluid handling system reliably.
As mentioned above, shown in Fig. 4,5 and 7, each of platform 402,404 can also comprise acquisition loop 418 and following fluid acquisition loop 419.Each acquisition loop 418,419 comprises the inside and upwardly extending annular component from each inwall of 402,404 substantially.It maybe can be the integral part of unit inwall that ring 418,419 can be attached to unitary inwall.Interior ora terminalis 421a, the 421b of acquisition loop 418,419 forms usually to have than the diameter of processed substrate 401 size greater than the diameter between about 5mm and the about 50mm.Simultaneously, substrate 401 can rise vertically during handling and descend by each ring 418,419.In addition, each of acquisition loop 418,419 also comprises discharge opeing road 420a, 420b respectively, and it is configured to collect the treat fluid (Fig. 7) that drops on the fluid capture ring 418,419.As shown in Figure 7, discharge opeing road 420a, 420b are communicated with discharge port 314.Discharge port 314 is connected to Seperating box 429 (Fig. 4), and wherein gas and fluid can be by disconnected from each other.Seperating box 429 comprises exhaust port 430 that is positioned on Seperating box 429 tops and the discharge opeing road 431 that is positioned on the box bottom.Seperating box 429 also comprises recovery port 432 (Fig. 4), and it is configured to accumulative treat fluid among the discharge opeing road 420b of the discharge opeing road 420a of acquisition loop 418 or acquisition loop 419 is delivered to the reclaim equiment (not shown) to be used for collection and to re-use.
With reference to figure 7, acquisition loop 418 and 419 is configured to allow the fluid handling at a plurality of vertical positions place of substrate 401 in each of treatment bench 402,404.For example, on a position, substrate 401 can be arranged so that the upper surface of substrate 401 is positioned at the place, summary top of the ora terminalis 421a of acquisition loop 418, is used for the first fluid treatment step.In this structure, first treat fluid can be assigned on the substrate 401 by dispense arm 406,408, simultaneously substrate supports assembly 414 and thus substrate 401 use and support motors 443 and rotate with the speed between about 5rpm and the about 120rpm.The feasible fluid that is assigned on the substrate of the rotation of substrate 401 radially flows and leaves substrate.Along with fluid flow is crossed the edge of substrate, it outwards and advance downwards and be received on the acquisition loop 418.Fluid can be taken in and deliver to recovery port 432 by discharge opeing road 420a or be recycled if desired to be used for subsequent disposal.In case the first fluid treatment step is finished, substrate 401 can move to second vertically and handle the position, and the ora terminalis 412b that the upper surface of this substrate 401 is positioned at down fluid acquisition loop 419 slightly locates the top, is used for second fluid manipulation steps.Substrate 401 is processed in the mode similar to the first fluid treatment step in this structure, and the fluid that uses in handling can be collected by discharge opeing road 420b.The advantage of this structure is to use in single treatment bench multiple fluid to handle chemicals.In addition, the fluid handling chemicals can be perhaps inconsistent mutually, because isolating fluid capture ring 418,419 (each has independently discharge opeing road 420a, 420b) allows to collect discretely inconsistent treat fluid.
Fig. 8 A illustrates the sectional view of exemplary fluid treatment chamber 800, and it is suitable for realizing all respects of the present invention.Fluid treatment chamber 800 can be positioned at any place in the processing unit position shown in Figure 1 102,104,106,108,110,112,114,116.Alternatively, fluid treatment chamber 800 may be embodied as independently spraying plating unit, or combines with another substrate processing platform.Fluid treatment chamber 800 generally includes handles compartment 28, and it comprises top (optionally, not shown), sidewall 10 and matrix 27.Have annular sidewall and be arranged in substantially on the central position of matrix 27 at the basin body 4 of supercentral hole 4A of its bottom 4C.Rotating shaft 13 is arranged among the hole 4A of basin body 4 substantially.A plurality of substrate supports refer to that 18 are connected to the rotating shaft 13 in the hole 4A that is positioned basin body 4.Substrate supports refers to be configured to by vacuum being applied to the back side W of substrate W
2, to come clamp substrate W by friction or " card is inhaled " substrate.By using linear slide 30, rotating shaft 13 and substrate supports refer to that 18 can rise or descend with respect to basin body 4.When being in when handling the position, shown in Fig. 8 A, be clamped in substrate supports and refer to that substrate W on 18 is by using slide 30 location with at the top side wall 4D of basin body 4 and the substrate back W of substrate W
2Between form adjustable gap 33.Gap 33 be adjusted to usually the restriction and the controlled temperature controlled fluid from substrate back W
2And flowing of the fluid displacement 25 that forms between the basin body 4.Fluid source 3 is delivered to fluid displacement 25 with temperature-controlled fluid.
In one embodiment, edge dam abutment 1 is positioned at substrate W circumference radially outward.Edge dam abutment 1 is the continuous cast ring of external substrate W substantially, and it can directly be attached to sidewall 10 (shown in Fig. 8 B), or is attached to and can makes the edge dams shoulder 1 vertical-lifting assembly 2 that rises vertically and descend.Edge dam abutment 1 is configured to keep a certain amount of usually and distributes port 26 to be delivered to the treat surface W of substrate W from fluid
1On fluid.In one aspect, the treat surface W of substrate W
1Define fluid displacement zone 29 with the inwall 1A of edge dam abutment 1, wherein assembled the fluid that on treat surface W1, keeps.In one aspect, edge dam abutment 1 is configured to have the internal diameter bigger than the external diameter of substrate W, makes to form gap 32 between the inwall of the circumference of substrate W and edge dam abutment 1.Gap 32 form usually certain size with since its size and substrate W, edge dam abutment 1 and remain on surface tension between the fluid displacement zone 29 and minimum stream through the gap 32 Fluid Volume.
In one aspect, edge dam abutment 1 is used to allow the treat surface W of fluid collection at substrate
1On, prevent the substrate back W of fluid contamination substrate W
2, and restriction is assigned to the consumption of the treatment soln in the fluid displacement zone 29.In one aspect, gap 32 can be between about 0.5mm and about 2mm.
In one embodiment, edge dam abutment 1 can be promoted or reduction by vertical-lifting assembly 2 (it is suitable for edge dam abutment 1 is positioned on two or more vertical positions).Vertical-lifting assembly 2 can be traditional pneumatic actuator or the DC servomotor that is attached to guide screw line (not shown).In one aspect, the rising of edge dam abutment or decline can be used for regulating the amount of the treat fluid that remains on fluid displacement zone 29, and therefore regulate the treat surface W that is positioned at substrate W
1On Fluid Volume.On the other hand, when can dropping to, edge dam abutment 1 make the top of edge dam abutment 1 be lower than substrate W, or rise to when making the bottom of edge dam abutment 1 be higher than substrate W, allow to remain on the fluid on the substrate W because gravity or the centrifugal force that produces by the rotation substrate flow radially outward and leave substrate W surface.When edge dam abutment 1 rises or descends, also can realize other processing such as clean and drying treatment.
Fig. 8 C and 8D illustrate an embodiment of edge dam abutment 1, and it has the prolongation 1C that is positioned at substrate W below.In one aspect, prolongation 1C extends internally from the inwall 1A of edge dam abutment 1, and therefore makes edge dam abutment 1 have " L " shape cross section.Prolongation 1C is configured to have the internal diameter littler than the external diameter of substrate W usually.In one aspect, shown in Fig. 8 C, edge dam abutment 1 is orientated formation gap 32 as and is flowed with the fluidic that restriction during handling remains in the fluid displacement zone 29.
In one aspect, shown in Fig. 8 D, edge dam abutment 1 rises enough high, makes the prolongation 1C of edge dam abutment 1 contact the surface of substrate W, is formed on substrate W with the static state " pond " that allows distributing fluids and goes up (Fig. 8 D).On the other hand, prolongation 1C can be used for that substrate supports is left in substrate W lifting and refer to 18 to allow at substrate back W
2Be not accommodated under the temperature-controlled fluid heating condition in the fluid displacement 25 substrate W is handled.On the other hand, by using vertical-lifting assembly 2, edge dam abutment 1 can drop to makes the top of edge dam abutment 1 be lower than on the position of substrate W, and the treat fluid that therefore remains on the substrate can flow radially outward and leave substrate W owing to the rotation of gravity or substrate.When edge dam abutment 1 descends, also can realize other processing such as cleaning and drying treatment.
With reference to figure 8A, usually, three or more substrate supports refer to that 18 tops that can radially be attached to rotating shaft 13 are with support substrates thereon.In one aspect, three substrate supports refer to that 18 are evenly arranged on the radial orientation, that is, refer to refer between the angle of separating be 120 degree.Substrate supports refer to 18 have usually be formed on rotating shaft 13 in the centre channel 17 that is communicated with of rotating shaft port one 3A.In one aspect, rotating shaft port one 3A and centre channel 17 are communicated with vacuum source 15 fluids such as vacuum venturi.In this structure, by at substrate processing surface W
1Pressure reduction between the vacuum that is produced by vacuum source 15 in normal atmosphere and the centre channel 17 of top, substrate can remain on substrate supports and refer in the sealing 16 (for example, O encircles 16A, elastic diaphragm 16B) on 18.Use vacuum to keep substrate can be used to prevent refer to that when substrate W and support 18 are just referring to motor 20 rotations by substrate supports and/or passing through substrate supports lifting subassembly 50 vertical when mobile, the substrate substrate supports that slips away refers to 18.
Fig. 8 E illustrates to have location O ring 16A thereon and refers to 18 vertical more detailed view with the substrate supports of support substrates W.The shape of O ring 16A and material hardness can refer to that 18 are optimized flatness problem and the surface imperfection that takes place with compensation in the semiconductor wafer of being everlasting based on each substrate supports.Has comparatively large cross-sectional area and by " non-smooth " material (for example, Viton
TM, butyronitrile (buna-N) etc.) and the soft resilient seal made is that the ideal that is used for O ring 16A is selected.In this structure, when being applied vacuum and referred to 18 so that substrate W is remained to by vacuum source 15, sealing 16A is as primary seal.O ring 16A can also prevent to remain on escape of liquid in the fluid displacement 25 in centre channel 17.
Fig. 8 F illustrates substrate supports and refers to another embodiment of 18, and it remains on substrate on the elastic diaphragm 16B.In this structure, elastic diaphragm 16B can be positioned at substrate supports refer to 18 each on referring to providing fluid-tight seal on 18 the end in substrate supports, thereby prevent that fluid from entering vacuum source 15.By using at substrate back W
2And the sub-atmospheric pressure or the vacuum that produce among the regional 16F that forms between the upper surface 16C of elastic diaphragm 16B, elastic diaphragm 16B is suitable for keeping locating substrate thereon.When using vacuum source the 16D of the back side of elastic diaphragm 16B after, to produce sub-atmospheric pressure to make elastic diaphragm 16B distortion (for example, extend or twist), form aforesaid sub-atmospheric pressure or vacuum.The distortion of elastic diaphragm 16B makes at substrate back W
2And form " vacuum " between the sealing (it is formed between the contact 16E on the upper surface 16C of elastic diaphragm 16B).Usually, it is desirable to, elastic diaphragm 16B is by soft and non-lubricious material (for example, Viton
TM, butyronitrile (buna-N) etc.) make.
With reference to figure 8A, fluid treatment chamber 800 comprises that also substrate supports refers to motor 20, and it is connected to rotating shaft 13 and is configured to rotation usually and the support substrates support refers to 18 and rotating shaft 13.Rotating seal component 14 can be located to provide rotary seal between rotating shaft 13 and vacuum source 15.Rotatablely move and refer to that by rotating shaft 13 and substrate supports 18 pass to substrate W from motor 20.Substrate supports refer to 18 and the rotating speed of rotating shaft 13 can change according to the particular procedure of carrying out (for example deposit, clean and dry).Under sedimentary situation, depend on the viscosity of treat fluid, substrate supports refers to be suitable for relative low speed rotation, between for example about 5rpm and the about 150rpm.During clean, substrate supports refers to that 18 can be suitable for relative middling speed rotation, between for example about 5rpm and the about 1000rpm.Under dry situation, substrate supports refers to that 18 can be suitable for relative high speed rotating, between for example about 500rpm and the about 3000rpm to dry position substrate W thereon.
Substrate supports refers to that motor 20 can be connected to substrate supports lifting subassembly 50, and it generally includes the linear slide 30 and the substrate supports that are coupled to guide screw line 31 and promotes motor 19.In a layout, it is it to be rotatablely moved be transferred to the precision motor of guide screw line 31 that substrate supports promotes motor 19.Rotatablely moving of guide screw line 31 is converted to the motion of translation of linear slide 30, and this motion of translation is passed to rotating shaft 13.
With reference to figure 8A, basin body 4 can be installed to matrix 27 with a plurality of bolt assemblies 12.The shape of basin body 4 forms fluid displacement 25, and it is communicated with fluid source 3 fluids by the one or more inlet 4B on basin body 4 bottoms.Fluid source 3 can be suitable for sending the fluid such as the DI water that is heated.In one aspect, fluid source 3 makes fluid one or more inlet 4B that flow through, then through fluid displacement 25 and then cross the top side wall 4D of basin body 4.In one aspect, substrate W orientates as and makes at substrate back W
2And form gap 33 between the top side wall 4D of basin body 4 to guarantee substrate back W
2With send from fluid source 3 or the mobile fluid between contact.The size in gap 33 is constructed to allow fluid flow to cross top side wall 4D (seeing the arrow that is labeled as " A ") and guarantees fluid contact substrate back W
2In one aspect, basin body 4 is constructed in fluid displacement 25, especially at substrate back W
2Near the fluid that produces and keep uniform temperature.Usually, this orientates as away from substrate back W by the size and dimension of optimization fluid displacement 25 and/or with one or more inlets
2Realize.The optimization size that can realize uniform underlayer temperature of fluid displacement 25 can be along with the fluid type that is delivered to fluid displacement 25, refer to that through fluid flow, fluidic design temperature point, the substrate supports of fluid displacement 25 18 physical size and substrate supports refer to 18 rotating speed and change.Because laminar flow regime has shown relatively poor heat transfer characteristic, can also be suitable for keeping turbulent flow in fluid displacement 25 so substrate supports refers to 18 rotation.In one aspect, the fluid that is delivered to fluid displacement 25 is controlled by temperature by using fluid heater 41.Fluid heater 41 can comprise serial fluid well heater 42 and/or the attaching that is attached to fluid source 3 or be embedded in heating unit 43 in the basin body 4.
In one aspect, be designed to prevent or minimize the back side that the treat fluid that flows out fluid displacement zone 29 contacts substrate W undesirably from fluid source 3 and through outside the flowing of the fluidic in gap 33.Prevent that contacting between treat fluid and the substrate back from will prevent that particulate or unwanted material are deposited on the back side of substrate, it can influence finished semiconductor device product rate.
In one embodiment, can be between the hole 4A of rotating shaft 13 and basin body 4 tectonic gap 5 to allow rotating shaft 13 rotatablely moving with respect to basin body 4.Gap 5 can be between about 0.1mm and about 0.5mm be wide.But, also can use greater or lesser gap.Capture element 9 with hole 9A is positioned at basin body 4 belows and centers on rotating shaft 13.In capture element 9 inside, labyrinth seal is formed between guard shield 7 and the capture element 9.Labyrinth seal is defined as one group of stacked feature (that is, the element 7 and 9 among Fig. 8 A) usually, and its geometrical shape and structure owing to stacked feature prevents that fluid flow from passing through sealing.Be collected in the collecting zone 8 by capture element 9 by gap 5 mobile fluids, and then be directed near the discharge opeing road 6, bottom that is positioned capture element 9.Alternatively, sealing can be used between the hole 4 of rotating shaft 13 and basin body 4, and has removed the labyrinth sealed needs.
In one aspect, during depositing treatment, by send such as the mixture of nitrogen, helium, hydrogen, argon and/or these gases or in semiconductor processes the processing gas commonly used other gases control the amount of handling oxygen in the compartment 28 or other gases.Handle gas and can be incorporated into processing compartment 28, and discharge from discharge port 21 by HEPA formula filtering system (seeing Fig. 2, element 313).Have the perforation plate 11 that forms a plurality of hole 11A that pass it and improved the uniformity coefficient that mobile process is handled the processing gas of compartment 28.
System operation
In when operation, the embodiment of system 100 of the present invention can be used for carrying out clean after electroless plating pre-clean processes, electroless plating activation treatment, electroless treatment, the electroless plating and/or can be used for other treatment steps of electroless treatment.Now, will the exemplary process sequence that the use embodiments of the invention are used to carry out electroless treatment be described for embodiments of the invention described herein.Electroless treatment starts from substrate is inserted in sealing treatment shroud 302 (see figure 2)s usually.Insert to handle to generally include and open band valve access port 304 and substrate 401 is inserted into processing shroud 302 with mainframe automation 120.Substrate 401 is with (that is, the surface to be plated of substrate 401 is towards last) insertion towards last orientation.
In case substrate is inserted in the sealing treatment shroud 302, mainframe automation 120 refers to the support of substrate orientation in treatment bench 404 on 412, and mainframe automation 120 is from handling shroud 302 withdrawals.Support refer to 412 then vertically position substrate 401 handle being used for, be with valve access port 304 to be closed simultaneously.During inserting processing, promptly during the time period of opening when band valve access port 304, the gas supplying in the environment control unit 315 is in " opening " and is impelled with rare gas element filling sealing treatment shroud 302.Make inert gas flows make that to the processing of handling in the volume handling gas outwards flows by access port 304, this is constructed to prevent surrounding gas, particularly oxygen enters sealing treatment shroud 302, because oxygen is known plating material (and particularly, be copper) to be had deleterious effect (oxidation).After band valve access port 304 is closed, handle gas flow and continue, and the processing gas flow had just begun before valve access port 304 is opened usually.In a single day the processing gas flow continues during electroless plating cleaning, activation and plating sequence, and is with valve access port 304 to close, discharge port 314, pore and/or vacuum pump can be used for keeping desired processing pressure at sealing treatment shroud 302.The combination of gas supplying, HEPA strainer and discharge port 314 is used to be controlled at the oxygen level in sealing treatment shroud 302 during the concrete treatment step, promptly, if desired, can be the oxygen level in each different treatment steps control and the optimization process shroud 302.
In case substrate is positioned in the processing unit, electroless treatment of the present invention will start from the substrate pre-clean processes usually.Pre-clean processes starts from the upper surface of substrate is positioned at the summary top of the ora terminalis 421a of acquisition loop 418, usually between about 2mm and about 10mm.Realize clean via the cleaning soln that is assigned on the substrate surface by dispense arm 406.Cleaning soln can just be assigned to during the processing that descends on the substrate surface to save the treatment time and to improve unit output.Depend on desired sanitary characteristics, cleaning soln can be acidity or basic solution, and the temperature of cleaning soln can be controlled (heating or cooling) according to treatment process.In addition, cleaning soln can comprise surfactant additive.The rotation of substrate (usually between about 10rpm and about 60rpm) makes cleaning soln flow radially outwardly to leave substrate and flow on the acquisition loop 418, be collected at this place's cleaning soln and be delivered to discharge opeing road 420a, and then flow to Seperating box 429 and separate and circulation being used for as required via discharge port 314.
In case substrate is cleaned, clean substrate surface usually.When clean is included in the rotation substrate cleaning solution such as deionized water is assigned to substrate surface.Cleaning solution is to be set to and can to distribute from flow rate and temperature that substrate surface removes any residual cleaning liq effectively.Substrate rotates with the speed that is enough to force cleaning solution to leave substrate surface, between promptly for example about 5rpm and the about 120rpm.
In case substrate is cleaned, can adopt second cleaning step.More specifically, generally include acidic activated solution is applied to the activation step of substrate surface before, substrate surface is at first regulated cleaning solution by tart and is handled.Regulate cleaning solution and generally include acid (acid of for example using) in activated solution, its running thinks that applying of acidic activated solution regulate substrate surface.The exemplary acid that can be used for regulator solution comprises that nitric acid, chloro acid, methylsulphonic acid and other are usually used in the acid of electroless plating activated solution.Substrate regulate to be handled and can be carried out in the processing position adjacent with last acquisition loop 418, perhaps substrate can drop to the processing position adjacent with following acquisition loop 419, and this depends on the consistency that is used to regulate the chemicals of processing and is used for the chemicals of pre-clean processes.
In case substrate is conditioned, under near the state the following acquisition loop 419, activated solution is applied to substrate surface in substrate orientation.The catalyzer that activated solution is handled as subsequent deposition usually and/or substrate surface and subsequent deposition layer between short stick.Activated solution is assigned on the substrate by arm 408, and is impelled as the result of substrate rotation to flow radially outwardly and cross the edge of substrate and flow on the acquisition loop 419.Activated solution is then collected to be used for recirculation by discharge opeing road 420.Activated solution generally includes the palladium based sols with acidic group plinth.During activation step, back side substrate surface (it typically is circle and its diameter is similar to fluid distribution member 405) is positioned at usually apart between the about 0.5mm of the upper surface of fluid distribution member 405 and the about 10mm.Space between the back side of substrate and the fluid distribution member 405 is filled with temperature-controlled fluid, and it can be the deionized water that the hole 407 from be formed on fluid distribution member 405 is distributed.The dorsal part of 407 temperature-controlled fluid (be generally heated fluid, but also can be cooling fluid) the contact substrates that distribute and the substrate that heat is transferred to substrate or is used to handle with heating/cooling from the substrate transport to the fluid from fluid from the hole.Temperature-controlled fluid can be supplied constantly, or alternatively, can supply the fluid of predetermined amount, stops the fluid supply then.Flowing of the temperature-controlled fluid of contact substrate back can be controlled to keep the constant underlayer temperature during activation treatment.In addition, substrate can rotate to help uniform heating/cooling and liquid distribution with the rotating speed between about 10rpm and the about 100rpm during the activation treatment.
In case substrate surface is activated, additional cleaning and/or cleaning soln can be applied to substrate surface to remove activated solution from it.First cleaning and/or the cleaning soln that can use after activation comprise another kind of acid, preferably are chosen as the acid coupling with activated solution.After the back cleaning of acid, can also use the neutral solution such as deionized water to clean substrate to remove any residual acid from substrate surface.Activation back cleaning and cleaning step can or be handled the position down and carry out in last processing position, and this depends on the consistency of chemicals.
When activation step was finished, substrate can be transferred to deposition table 404 from electroless plating activation platform 402 by substrate transport shuttle 305.Transmission process comprises with supporting and refers to that 412 raise substrate and leave electroless plating activation platform 402, the substrate transport shuttle 305 of mobile substrate below, substrate is reduced on the substrate transport shuttle 305, and substrate is transferred to deposition table 404 from electroless plating activation platform 402.In case substrate is in the deposition table 404, the substrate supports that is used for deposition table 404 refers to that 412 can be used for removing substrate and substrate orientation being handled being used for from substrate transport shuttle 305.
The location of substrate generally include with substrate orientation near last acquisition loop 418 to be used for pre-clean processes.Pre-clean processes comprises with arm 408 pre-clean solution is assigned on the substrate that wherein pre-clean solution is selected as having and the similar pH value of the follow-up electroless plating solution that applies usually, makes pre-clean solution substrate surface can be adjusted to the pH value of deposit solution.Pre-clean solution can be a basic solution, and the electroless deposition solution that itself and regulating step apply afterwards has same basic.The precleaning of substrate surface has also been improved the wettability of the substrate surface that is used for depositing treatment with solution with identical pH value with plating liquor.According to the needs of treatment process, pre-clean solution can be heated or cooled.
After substrate surface was regulated by basic solution, the next procedure during electroless deposition is handled was that plating liquor is applied to substrate surface.Plating liquor generally includes the alloy mode with pure metal or several metal is deposited to metal on the substrate surface, for example cobalt, tungsten and/or phosphorus etc.Plating liquor is alkaline on the pH value usually, and can comprise tensio-active agent and/or the reductive agent that is configured to help electroless treatment.Substrate is lowered to down fluid acquisition loop 419 usually and omits the position of top to be used for deposition step.Simultaneously, cross the edge of substrate by outside the flowing of deposit solution that arm 408 applies, and ring 419 receptions that are hunted down, at acquisition loop 419 places, solution is collected to be used for possible circulation by discharge opeing road 420b.In addition, during deposition step, the back side of substrate is positioned at usually apart between the about 0.5mm of the upper surface of fluid distribution member 405 and the about 10mm, or between about 1mm and the about 5mm.The back side and the space between the fluid distribution member 405 at substrate are filled with controlled temperature (be generally and be heated) fluid, and it can be the deionized water that distributes by the hole 407 that is formed in the fluid distribution member 405.The back side of the 407 temperature-controlled fluid contact substrates that distribute from the hole, and heat is transferred to substrate from fluid is used for depositing treatment with heated substrate.Temperature-controlled fluid supply constantly during whole depositing treatment usually.Temperature-controlled fluid mobile at contact substrate back during the depositing treatment is controlled to keep the constant underlayer temperature during depositing treatment.In addition, substrate can be applied to the even heating and the distribution of the solution of substrate surface with the rotation of the rotating speed between about 10rpm and the about 100rpm during the depositing treatment with help.
In case depositing treatment is finished, clean substrate surface in the clean after deposition usually, this deposition back clean comprise with deposition afterwards cleaning soln be applied to substrate.Deposition back clean can or be handled the position down and carry out in last processing position, and this depends on the consistency of handling chemicals.Deposition back cleaning soln generally includes the basic solution that has with the roughly the same pH value of plating liquor.Substrate rotates during clean to impel cleaning soln to leave substrate surface.In case clean is finished, can for example use the washed with de-ionized water substrate surface, and dry to remove any residual chemicals from substrate surface.Alternatively, substrate can come evaporate to dryness by applying the solvent (for example acetone, ethanol etc.) with high vapour pressure.
In example system 100 of the present invention, processing unit position 102 and 112 can be configured to carry out electroless plating pre-clean processes, electroless plating activation treatment and electroless plating activation back clean, and processing unit position 104,110 can be configured to cleaning unit behind electroless deposition unit and the electroless deposition.In this structure,, be possible so handle the recovery chemicals from each because each activation and sedimentation chemistry preparation been separated in processing position separately.Another advantage of this structure is: because the processing space that is used for fluid processing unit position 102,104,110,112 is in sealing treatment shroud 302, so substrate can be transferred to electroless deposition solution from activated solution under inert environments.In addition, during loading and handling, handle shroud and be full of, simultaneously by rare gas element, the inside of sealing treatment shroud 302 has the oxygen per-cent of abundant reduction, for example, and less than the oxygen of about 100ppm, or more specifically, less than the oxygen of about 50ppm, or further, less than the oxygen of about 10ppm.The abundant oxygen level that reduces, and in conjunction with between last activation and the plating unit near and transmission (usually less than about 10 seconds) fast, its running to be preventing the oxidation of substrate surface between activation and deposition step, this is great challenge to traditional electroless plating system.
During whole fluid manipulation steps of the present invention, substrate location can change.More specifically, substrate can change with respect to the vertical position of fluid distribution member 405.For example, during handling, if desired, can increase to reduce substrate temperature apart from the distance of fluid distribution member 405.Similarly, substrate can reduce with the rising substrate temperature to the spacing of fluid distribution member 405 during handling.
Another advantage of the embodiment of the invention is that system 100 can use perhaps inconsistent chemicals mutually.For example, in the processing sequence of utilizing incompatible chemicals (for example acidic activated solution and alkaline plating liquor), acidic solution will be specifically designed in a unit or the platform usually, and basic solution will be specifically designed in another unit.These unit can be adjacent to the location, and substrate can be by the transmission of one of shuttle 305 between each unit.Substrate was cleaned in each unit before being transferred to adjacent cells usually, and this prevents to pollute another unit from a unitary chemicals.In addition, a plurality of processing position in each treatment bench or unit (for example, the location of acquisition loop 418,419) allows in single cell or platform, to use inconsistent chemicals, because each chemicals can and keep separated from one another by 418,419 gatherings of different acquisition loops.
Embodiments of the invention also are configured to the unit of single use type chemicals, that is, the processing chemicals of single agent can be used for single substrate, and then are dropped and need not solution and reclaim, and promptly are not used further to handle other substrates.For example, system 100 can utilize the common unit with activation, cleaning and/or aftertreatment substrate, and uses another unit to carry out electroless deposition and/or deposition back clean simultaneously.Because each of these processing may be utilized different chemicals,, and in case finish dealing with, the exhausted chemicals is drained from it so the unit is fed to substrate when being constructed to usually every kind of required chemicals needed again.But the unit is not configured to reclaim chemicals usually, because will bring more serious pollution problem by reclaiming different chemicals from single cell.
Other processing units that can be used for the embodiment of the invention can be authorized in July 10 calendar year 2001, the U.S. Patent No. 6 that is entitled as the common transfer of " In-Situ Electroless Copper Seed Layer Enhancement in anElectroplating System ", 258,223 and submit December 26 calendar year 2001, the U.S. Patent application No.10/036 that is entitled as the common transfer of " Electroless Plating System ", find in 321, here by reference both full text (not with the conflicting degree of the present invention in) it is incorporated herein.
The spray distribution system
Fig. 9 illustrates towards the sectional view of an embodiment of last fluid processing unit 1010, and it is similar to above-mentioned each 402,404.Can see substrate 1250 among Fig. 9 towards last orientation.Though each embodiment of Xie Shiing has explained and has been configured to the processing unit 1010 that complete face is upwards handled herein, the orientation of substrate also is not intended to restriction all respects of the present invention.Term " electroless plating " (or electroless deposition processing) is intended to cover all sidedly and is used for electroless deposited films is deposited to all processing steps on the substrate, comprises one or more in for example pre-clean processes step (substrate preparation step), electroless plating activation treatment step, electroless deposition steps and deposition back cleaning and/or the cleaning step.
In one embodiment, substrate supports assembly 1299 generally includes substrate component 1304 and is attached to its fluid distribution member 1302.Substrate supports assembly 1299 shown in Fig. 9-12 illustrates another embodiment of above-mentioned platen assembly 403.Cast sealing 1121 such as the sealing of O ring type is positioned near the circumference of fluid distribution member 1302.Cast sealing 1121 is configured to cooperate with the outer top edge of substrate component 1304 usually, seals to produce fluid tight between fluid distribution member 1302 and substrate component 1304, thereby helps the fluid delivery process.
With reference to figure 9B, as the possibility that above-mentioned heating is arranged, optionally heater coil 1112 can remove from substrate component 1304, and is installed in the fluid distribution member 1302.For holding this transformation, substrate component 1304 can be thinner, and the geometrical dimension of fluid distribution member 1302 will increase.Along with deionized water flows through fluid intake 1308, it by fluid channel 1306, and then flows into the back side of substrate 1250 and the heat transfer zone 1312 between the fluid distribution member 1302 through heated fluid pervasion component 1302 belows.In this arranged, isolating fluid heater 1164 can remove alternatively.It should be noted that fluid channel 1306 can be configured to the guiding of DI water is the back side against substrate 1250.The existence of water heated substrate 1250 not only on the back side of substrate 1250, but also prevent that the electroless plating fluid from contacting the back side of substrate 1250 undesirably.
A plurality of substrate supports refer to that 1300 are positioned near the circumference of fluid distribution member 1302 usually.Substrate supports refers to that 1300 are configured to substrate 1250 is supported on the required separation distance place of fluid distribution member 1302 tops, to form heat transfer zone 1312.Automation carriage (not shown) can be inserted at substrate removal and/or when insert handling under the substrate 1250 between substrate supports refers to 1300 to lift and to remove substrate 1250.In optional structure, can use to replace substrate supports to refer to that 1300 continuous loop (not shown) comes support substrates.In this structure, can also adopt lifting pin assemblies (not shown) to come to promote substrate from continuous loop.Like this, the automation carriage can be visited the bottom of substrate 1250 once more, makes it can be transmitted the unit 1010 of coming in and going out.Fluid processing unit 1010 also comprises groove 1108.This groove has defined the opening that forms by sidewall 1015 being provided for the access path of automation (not shown), substrate 1250 be delivered to unit 1010 and 1010 obtain substrate 1250 from the unit.
In the unit 1010 of Fig. 9 structure, substrate supports assembly 1299 is axial translation and by using head bearing 1054A and lower bearing 1054B around base plate supports 1301 rotations optionally.For this reason, substrate lifting member 1060 at first is set.Substrate lifting member 1060 comprises substrate supports assembly motor 1062.In one was arranged in, substrate supports assembly motor 1062 was the precision motor that make 1061 rotations of guide screw line.Rotatablely moving of supporting component motor 1062 is converted to the motion of translation that refers to slide 1064.Refer to that slide 1064 is along there being slot shell 1066 to depend on, so that slide is driven up and down.In the case, supporting component motor 1062 electric actuation preferably.Alternatively, substrate supports assembly motor 1062 can be pneumatically actuated air cylinder.
Base plate supports 1301 is installed to chamber pedestal or platform 1012 by base member 1013 and 1014.So in a preferred embodiment, substrate component 1304 is by substrate lifting member 1060 translations, and refers to 1300 guiding piece with acting on substrate supports.Head bearing 1054A is set and lower bearing 1054B realizes this support.Base plate supports 1301 is also with the pipeline of the fluid intake 1308 that acts on the electrical lead (not shown) and presented by pipeline 1166.Lead and pipeline extend through the substrate pipeline 1305 in the base member 1014.
The sectional view towards last electroless treatment chamber of Fig. 9 A presentation graphs 9.In this view, substrate lifting member 1060 is in its raised position.Substrate 1250 is raised the surface of leaving substrate component 1304 and handles with the envrionment temperature of fluid processing unit 1010 with permission, and this is because substrate is not heated with fluid displacement 1310 and substrate component 1304 fluid in contact.This also is that automation enters and picks up the position that substrate 1250 is placed usually before the substrate handled 1250.
In another aspect of the present invention, well heater 1161 is attached in the fluid drawing-in system 1200, is heated before entering treatment zone 1025 at fluid.The well heater of conceiving among the present invention 1161 can be the equipment that energy is given any kind of treat fluid.Preferably, well heater 1161 is jacketed type resistance heater (for example, well heater comes heating fluid by introducing tube wall), rather than immersion heater (for example, plus heater element contact solution).The temperature of treat fluid that the well heater 1161 that is used in combination with controller 111 can be used for guaranteeing entering the treatment zone 1025 of fluid processing unit 1010 is in temperature required.
In another aspect of the present invention, well heater 1161 is microwave power sources and propagates microwave by microwave resonator that it is used for promptly giving treat fluid with energy.In one embodiment, microwave power source moves to the power of 2000W with about 500W on 2.54GHz.In an embodiment of series connection microwave resonator well heater, the temperature of various solution (for example, cleaning chemistry preparation, cleaning solution and back cleaning soln) before entering processing unit, it is increased to optimal degree.In one embodiment, can adopt two or more isolating microwave heaters to heat the separation of the fluid of in the separation of the fluid pipeline, sending selectively from fluid drawing-in system 1200.Therefore, when using, the different fluid of sending from each source of solvent 1202,1204,1206 can be delivered to the surface of substrate with differing temps.
In another aspect of the present invention, fluid removal unit 1170 is attached in the fluid drawing-in system 1200, wherein carries or any gas of dissolved to enter in treat fluid to remove before the treatment zone 1025.Because the etching rate during dissolved oxygen is tending towards suppressing the metallic surface of electroless deposition reaction, oxidation exposure and influences the electroless plating clean is so the use of fluid removal unit can help to reduce any corrosion that is caused by the dissolved oxygen that exists in the treat fluid and/or handle fluctuation.The fluid removal unit is defined as usually can be from any unit of solution separating gas dissolved (for example, by using gas permeable membrane and vacuum source).The fluid removal unit can be for example bought from the Mykrolis company of Massachusetts Billerica.
In an embodiment of fluid processing unit 1010, shown in Fig. 9,9A and 9B, fluid drawing-in system 1200 is suitable for one or more treat fluid are delivered to by one or more nozzles 1402 surface of substrate 1250.More specifically, send the receiving surface that arm 1406 is delivered to substrate 1250 selectively from the treat fluid of source of solvent 1202,1204,1206 via fluid.Send arm 1406 along fluid and form a plurality of nozzles 1402.Nozzle 1402 is from inlet tube 1225 reception fluids and with the receiving surface of treat fluid guiding at substrate 1250.Nozzle 1402 can be arranged in the place, end of sending arm 1406, perhaps sends the length layout of arm 1406 along fluid.In the layout of Fig. 9,9A and 9B, a pair of nozzle 1402 is with the layout of equidistantly arranging.In one embodiment, one or more fluid drawing-in systems 1200 and/or nozzle 1402 are connected to the dispense arm 406 and/or 408 shown in Fig. 3 and 4.
In the structure of Fig. 9, fluid is sent arm 1406 and is had the length that can make far-end extend across substrate 1250 centers.Preferably, at least one in the nozzle 1402 is positioned at the far-end that fluid is sent arm 1406.Further preferably, fluid is sent arm 1406 and can be moved around dispense arm motor 1404, its be suitable for making fluid send arm 1406 pivots rotate with near or away from the center of substrate 1250.In Fig. 9,9A and 9B, fluid is sent arm 1406, and pivot rotates in response to the motion of dispense arm motor 1404.Dispense arm motor 1404 preferably is arranged in protection member 1410 afterwards so that dispense arm motor 1404 is partly isolated with chamber treatment zone 1025.
In one embodiment, fluid is sent arm 1406 and is suitable for not only pivot rotation, but also axially moves (Fig. 9).Fig. 9 B is illustrated in the sectional view towards last electroless treatment chamber of Fig. 9 among the optional embodiment.Here, fluid is sent arm 1406 and is connected to axial motor 1080 (for example, linear motor).Fluid is sent arm 1406 mobile permission fluid in the axial direction and is sent arm 1406 and orientate more close substrate 1250 selectively when needed as.
Figure 10 illustrates the vertical view towards last electroless treatment chamber of Fig. 9.Here, can send arm 1406 with respect to the fluid that mounted substrate 1250 is observed fluid drawing-in system 1200.Four schematic supports refer to that 1300 are depicted as support substrates 1250.In this view, fluid is sent arm 1406 rotations away from substrate 1250.This position allows to use lifting to refer to that 1300 promote substrate 1350 by above-mentioned substrate lifting member 1060.But, the path that rotatablely moves that arrow 1004 expression is sent arm 1406 for fluid, it has illustrated that fluid sends arm 1406 nozzle 1402 is rotated on substrate.In one aspect, during treat fluid is distributed in substrate surface, finish fluid and send rotatablely moving of arm 1406 and/or vertical motion, with the uniformity coefficient that is implemented in treatment soln on the substrate surface and desired distribution.Can be used for finishing rotation and/or vertical motion by making of dispense arm motor 1404 and axial motor 1080.Fluid is sent fluid uniformity coefficient and the coverage speed that the motion of arm 1406 above substrate 1250 can help to improve the required surface of substrate 1250.Preferably, substrate supports refer to 1300 and substrate 1250 rotate between 1402 allotment periods to improve the output of even fluid distribution degree and system from nozzle at fluid.
In another embodiment, treat fluid is sent on the arm 1406 near one or more nozzles of the rotation of substrate and is sent by being arranged in fluid, and simultaneously, carrying gas is (such as N
2Or argon) sends by being arranged near the nozzle that is positioned at the substrate outward flange that fluid sends on the arm 1406.During the fluid delivery operations, substrate preferably rotates.The injection of carrying gas around at substrate 1250 edges has formed treatment zone 1025 gas-bearing formation on every side.Gas-bearing formation has replaced any residual O that may remain in the treatment zone
2The those of ordinary skill of electroless deposition process field will appreciate that oxygen can produce detrimentally affect to some treatment step such as the chemical activation step.
In one embodiment, nozzle 1402 is ultrasonic nozzle or " air atomization nozzle ".Figure 13 shows the sectional view of a kind of design of air atomization nozzle 1402.This is the hybrid nozzle of internal flow.This means that fluid is at complete atomisation or the droplet of internal mix with the generation treat fluid.In this structure, carrying gas thereby comprise the small droplets of treatment soln, it is directed to substrate surface.In one embodiment, carrying gas is the rare gas element such as argon, nitrogen or helium, is used for the treat fluid of atomizing is transported to substrate surface.
In the designs of nozzles of Figure 13, nozzle 1402 comprises main body 1426 and top 1424.Top 1424 general diameters are that about 10 μ m are to about 200 μ m.In one embodiment, the diameter on top 1424 is that about 10 μ m are to about 50 μ m.Owing to the suction that Venturi (venturi) effect that produces when orifice gas supplying 1244 is sent when high pressure gas causes, fluid is sent by top 1424.In the layout of Figure 13, main body 1426 is respectively the isolating liquids and gases stream of reception and is provided with isolating passage 1422,1420.1424 places converge on the top for fluid channel 1422 and gas passage 1420, allow two kinds of streams to mix.This can be called " Venturi design with one heart ".In this arranged, the fluid that distributes from nozzle 1402 was pre-mixed to produce complete atomisation.Concrete top 1424 designs of Figure 13 have produced round spray pattern.But, should be appreciated that other tip configuration can be used to produce other spray pattern, for example straight or fan-spray figure.
Figure 14 provides air atomization nozzle 1402 sectional views of different designs.This is the external fluid mixing nozzle.In the designs of nozzles of Figure 14, nozzle 1402 also comprises main body 1426 and top 1424.The diameter on top 1424 also is generally about 10 μ m to about 200 μ m, and perhaps in another embodiment, diameter is that about 10 μ m are to about 50 μ m.In the layout of Figure 14, main body 1426 also is respectively the isolating liquids and gases stream of reception and is provided with isolating passage 1422,1420.But in this layout, fluid channel 1422 is independent of gas passage 1424 sends liquid by nozzle 1402, makes two kinds of streams not mix in main body 1426, and on the top 1424 external mix.This can be called " parallel Venturi design ".This layout has can independent pilot-gas and the advantage of liquid flow, is effective for the liquid and the grinding suspension (abrasive suspension) of more speed.This is opposite with the interior hybrid nozzle 1402 that the change of air-flow will influence liquid stream.
In one aspect, the use to the conventional ultrasonic wave nozzle that is similar to the nozzle shown in Figure 13 and 14 is suitable for producing the atomizing droplet of treat fluid, and it is directed at the receiving surface place of substrate.The direction of droplet (relative with liquid stream) is used to save expensive electroless treatment fluid.It also provides more uniform covering on receiving surface.And, when the distribution of the lip-deep atomizing treat fluid of substrate 1250 can be improved in the hydrodynamic frictional belt that substrate 1250 produces when using substrate supports to refer to motor 1052 rotations, this be because the shape in disorder (turbulent) frictional belt of the surface of rotating disk normally smooth in any direction or be parallel to substrate.The observable effect of boundary layer of atomizing treat fluid is better than traditional spray design (it makes fluid stream impact the surface of substrate), and this is because can minimize the non-homogeneous spray pattern that is produced by one or more nozzles by atomizing fluids is controlled to the frictional belt of the transmission of substrate surface.
For the fluid that is delivered to nozzle 1402 is provided with the fluid supplying.In Figure 13 and 14, show casing 1212.Casing 1212 comprises fluid intake 1218 and ventage 1214.Ventage 1214 is communicated with normal atmosphere.In addition, be provided with fluid outlet 1216.Between the fluid delivery period, from the gas of orifice gas supplying 1214 to be delivered to nozzle 1402 at a high speed.Because be communicated with normal atmosphere by ventage 1214, this has produced relative negative pressure in fluid channel 1422.Fluid then is forced through fluid outlet 1216 and enters nozzle 1402.
Usually, the treat fluid of sending from fluid drawing-in system 1200 can be activated solution, electroless deposition solution and/or the cleaning soln that is assigned to during handling on the substrate surface.In one embodiment, treat fluid is an activated solution.The example of activated solution comprises: comprise muriate, bromide, fluorochemical, fluoroborate, iodide, nitrate, vitriol, carbonylic palladium salt, the hydrochlorate of metal, and combination.In one embodiment, palladium salt is muriate, for example Palladous chloride (PdCl2).In another embodiment, palladium salt is nitrate, sulfonated alkane or the Pd that comprises non-coordination anion
+ 2Other soluble derivative (and this soluble derivative be difficult on solution or metallic surface forming bunch).In one embodiment, at terminal point that the copper cleaning soln applies and apply Queue time (or waiting time) between the time of origin of activated solution usually less than about 15 seconds, and preferably less than about 5 seconds.Activated solution operates usually so that activated metal kind crystal layer is deposited on the exposed copper of exposed features.Because known cupric oxide has the resistivity higher than copper, so the oxidation of the expose portion of copper layer after its cleaning may be disadvantageous to subsequent step.Queue time short between copper cleaning and activation has minimized oxidation, simultaneously as mentioned above, also can help to prevent the oxidation of the expose portion of copper layer in the use of fluid processing unit carrying atmosphere surrounding on every side.
In one embodiment, treat fluid is an electroless deposition solution.In one embodiment, the tectum of electroless deposition (capping layer) is deposited, and it is the alloy that comprises CoP, CoWP, CoB, CoWB, CoWPB, NiB or NiWB, and preferably includes CoWP or CoWPB.Depend on and treat sedimentary covering layer material, be used to form tectal electroless deposition solution and can comprise one or more metal-salts and one or more reductive agents.Electroless deposition solution can also comprise the pH value conditioning agent well known in the art such as bronsted lowry acids and bases bronsted lowry.When selected tectum comprised cobalt, electroless deposition solution generally included cobalt salt.The example of cobalt salt comprises muriate, bromide, fluorochemical, acetate, fluoroborate, iodide, nitrate, vitriol, other strong acid or salt of weak acid and/or its combination.Preferably, cobalt salt comprises rose vitriol, cobalt chloride or its combination.If the covering material of deposition tungstenic, then electroless deposition solution comprises tungstate.Preferably, tungstate comprises the salt of wolframic acid, and for example ammonium tungstate or wolframic acid tetramethyl-ammonium maybe can produce by the neutralization of wolframic acid.If deposit nickeliferous covering material, then electroless plating solution generally includes nickel salt.The example of nickel salt comprises muriate, bromide, fluorochemical, acetate, fluoroborate, iodide, nitrate, vitriol, carbonic acyl radical, strong acid or salt of weak acid and/or its combination.
When selected tectum comprises phosphorus, for example CoP, CoWP or CoWPB, then reductive agent preferably includes phosphorus composition, for example Hypophosporous Acid, 50 negatively charged ion (H
2PO
2).If covering material comprises boron, for example CoB, CoWB, CoWPB, then reductive agent generally includes boron component, dimethylamine-borine (DMAB), hydroboration negatively charged ion (BH
4 -) non-alkaline metal salt or its combination.Other reductive agents also can additionally or alternatively use with above reductive agent, for example hydrazine.In one embodiment, borine cobalt reductive agent is used for initialized processing on copper.
As mentioned, electroless deposition solution (treat fluid) and/or substrate can be heated to certain temperature.Exemplary temperature is between about 40 ℃ and about 95 ℃.In one aspect, heating electroless deposition solution and/or substrat structure have improved electroless deposition speed.This helps to remedy the temperature fall by treat fluid experience when its mass flowing nozzle 1402.In one embodiment, the sedimentation rate of covering material is about 100 /min or faster.In one embodiment, covering material deposits to the thickness between about 100 and about 300 , is preferably about 150 to about 200 .But desired is with the temperature maintenance on the substrate in uniform temperature, and this is because the sedimentation rate of known electroless treatment depends on temperature.Simultaneously, can use the heater coil 1112 and/or the well heater 1164 of substrate component shown in Figure 9 1304.
Figure 11 provides towards the sectional view of last fluid processing unit 1010 in optional embodiment.Also be provided with the receiving surface that fluid drawing-in system 1200 is used for fluid is delivered to substrate 1250.Also by one or more nozzle 1402 delivery process fluids.But in this embodiment, nozzle 1402 is arranged in the porous plate 1030 in the chamber cap assembly 1033.
With reference to figure 9,9A-B, 11 and 11A-B, chamber cap assembly 1033 at first comprises porous plate 1030.Preferably, porous plate 1030 is to have the hole that is formed on wherein or pore to allow the plate of fluid flow process.The exemplary materials that is used for porous plate comprises stupalith (for example, aluminum oxide), polyethylene (PE), polypropylene and PVDF, wherein is formed with pore or makes porose to allow fluid communication.In one embodiment, can adopt the HEPA filter arrangement.Usually, utilize the glass fibre be rolled onto in the paper shape material as the HEPA strainer.Fig. 9,9A-B, 11 and 11A-B in porous plate 1030 support by upper support ring 1031.Chamber cap assembly 1033 then generally includes and covers 1032, upper support ring 1031 and porous plate 1030.Form plenum chamber 1034 in the volume of lid 1032 between cap assemblies 1033 and porous plate 1030.In one aspect, porous plate 1030 is sealed to and covers 1032 by using two O ring sealings ( element 1036 and 1037).In the layout of Figure 11, lid 1032 is by porous plate 1030 and 1031 both supports of upper support ring.
In an embodiment of cap assemblies 1033, as shown in figure 11, treatment soln is delivered to substrate 1250 from source of solvent 1202,1204,1206 by inlet tube 1225, and inlet tube 1225 extends through and covers 1032 and then be branched off into one or more nozzles 1402 that treatment soln are directed to the substrate surface place in the porous plate 1030.In one aspect, for evenly flowing of gas is provided in treatment zone 1025, uses pipeline 1040 gas to be sent by plenum chamber 1034 and porous plate 1030 from gas supplying 1038, and be delivered in the treatment zone 1025 so that flowing-path to be provided.Valve 1035 is suitable for opening and closing selectively the fluid passage between plenum chamber 1034 and the gas supplying 1038.In one aspect, gas supplying 1038 will be provided to treatment zone 1025 such as the rare gas element argon, nitrogen, helium or its combination.On the other hand, the gas supplying is provided to treatment zone 1025 with oxygen-containing gas.Should be noted that in some stages that electroless deposition is handled exclusion of oxygen not, for example, can during activation step, add oxygen.In this structure, preferably will comprise the hydrogen of required ratio and the carrying gas of oxygen and form or be delivered in the treatment zone 1025 by porous plate 1030.
In one embodiment, the heating unit (not shown) is arranged near the plenum chamber 1034 the cap assemblies 1033.For example, the heater coil (not shown) can be arranged in the porous plate 1030.This provides the heating to the gas of sending from pipeline 1040, and it has minimized the formation of condensing on the substrate 1250 with drop thus.
In one embodiment, pipeline 1040 is connected to fluid drawing-in system 1200 to allow fluid (for example, treat fluid) replacement gas pushed through porous plate 1030.Like this, porous plate 1030 will serve as shower nozzle treat fluid is delivered to the surface of substrate 1250.
In one embodiment, pipeline 1040 can serve as the fluid delivery line, and also the use by vacuum source 1039 produces vacuum pressure and serves as fluid and remove pipeline in plenum chamber 1034.Vacuum source 1039 can be used to prevent that any fluidic that remained on the porous plate 1030 from dripping before just substrate 1250 being transferred out unit 1010.In this, the vacuum source 1039 such as the vacuum Venturi tube activated to produce vacuum in plenum chamber 1034, and it makes that then any fluid on porous plate 1030 lower surfaces " is gone up and inhaled " in plenum chamber 1034.
Figure 11 A represents the sectional view towards last electroless treatment chamber of Figure 11.In this view, gas flow diverter 1102 is arranged in the unit 1010.By using traditional lifting mechanism (not shown), gas flow diverter 1102 raises selectively or reduces.Shown in Figure 11 A, gas flow diverter 1102 is in it and dips, and this can allow substrate 1250 to transfer out/go into fluid processing unit 1010.
Figure 11 B shows the sectional view towards last electroless treatment chamber of Figure 11, and it has gas flow diverter 1102.Here, air-flow flow diverter 1102 is in its raised position, thus its can be used for " reinforcement " and/or conduct process solution during handling (for example, treatment soln droplet) its when nozzle 1402 is advanced flow and gas its from gas supplying 1038 and porous plate 1030 flowing when substrate 1250 is advanced.Therefore gas flow diverter 1102 is used to arrive repeatability and the particulate performance that the fluidic flow pattern improves treat fluid and flow pattern during the processing by the quantity of restriction obstacle and control.
Desired is that generator comes to check the fluidic process that just is being distributed on the substrate 1250 from unit 1010 exterior visual ground.In the layout of Figure 11, camera 1360 is arranged on 1010 inside, unit.This camera can be arranged as along sidewall 1015, under porous plate 1030, along support ring 1031, maybe can obtain any other position to substrate 1250 enough visuals field.Preferably, camera 1360 is arranged on the fixed position of lid.In the embodiment of Figure 11, camera 1360 is attached to upper support ring 1031.Camera 1360 preferably electric charge coupling shows camera (" CCD camera "), and it is communicated with controller 111 and adopts a series of pixels to come record digital image.The watch-dog (not shown) is arranged on 1010 outsides, unit so that the optical visible to substrate 1250 surfaces to be provided.Like this, provide visual affirmation in the opportunity and the appropriate level that can cover the electroless treatment fluidic of substrate 1250 during the treat fluid allocation process or during the depositing treatment.
Be auxiliary camera 1360, the desired light source (not shown) that provides.Light source will preferably be arranged on the fixed part of lid; But it can be positioned at any position adjacent with treatment zone 1025.Light source is used for illumination substrate 1250 during handling.In one aspect, camera 1360 is used to detect the light on the visible spectrum.
Visual confirmation preferably monitors by manpower and provides.But in a layout, the visual confirmation processing is handled by the visual control type of machine and is provided.In this arranged, the image of the substrate 1250 that is fully covered was programmed in the controller 111 (seeing above element 111).In one aspect, controller 111 thereby the pixel image that supervision is produced by camera 1360 during the fluid allocation process, and this image and image or other data of record are in advance compared, make and can carry out the various judgements relevant by controller 111 with processing.For example, at least up to by the actual substrate image that pixel detected in the camera 1360 and the images match of record in advance, otherwise the fluid allocation process does not allow " overtime ", or stops.
In one aspect, camera 1360 is infrared cameras.Infrared camera will be ignored visible wavelengths, but the identification thermal wavelength.Difference on the temperature can be the intensity of color or institute's detection signal in the image internal conversion that is detected, with the temperature head in the expression object (being substrate 1250).When the fluid that just is being assigned with is in surperficial different temperature with substrate 1250, temperature head will be recorded as colour-difference.The fluid distribution will continue to disappear up to temperature head, and this provides the indication that substrate 1250 is covered fully.Preferably, temperature head will be once more the visual control type control of machine that produces of use by controller and camera 1360 be monitored.Thus, can guarantee covering fully to substrate.
In yet another aspect, camera 1360 can be the spectrometer that is used to receive incident light and exports the data of various wavelengths of visible light of expression and intensity thereof.For example, ruddiness will have the bigger light composition intensity of group in the low wavelength of visible spectrum.Spectrometer generally includes optical prism (or grating) interface so that incoming signal is divided into its component optically, and it then is transmitted to the linear CCD detector array and lists.An embodiment of spectrometer comprises that the CCD detector array of being made up of thousands of independent detector element (for example, pixel) comes from prism (or grating) reception result spectrum.By collecting the data of intensity to wavelength, the information that the controller 111 that is communicated with camera 1360 then will receive recently compared with past or user-defined value, make electroless deposition treatment step and treatment variable (for example, fluid fraction of coverage, treatment time, underlayer temperature, substrate rotating speed) can be controlled to the optimization process result.
In a layout, under closed-loop control, operate under motion that camera 1360 can fluid dispense arm 1406 and the software optimization situation from the fluidised form of chemicals nozzle 1402, have the successive chemicals with the surface of guaranteeing substrate 1250 and cover.This closed-loop control can by its all controlled device 111 connect and camera 1360, dispense arm motor 1404 and the fluid drawing-in system 1200 of control in making of parts be used for realizing.
Figure 12 is illustrated among another optional embodiment the sectional view towards last fluid processing unit 1010.Here, treat fluid is also by spraying the receiving surface that fluid is applied to substrate 1250 by the nozzle 1402 that is arranged in the porous plate 1030.In this embodiment, porous plate 1030 raises selectively with respect to substrate 1250 or reduces.More specifically, chamber cap assembly 1033 axially moves with respect to substrate 1250.For realizing that this moves axially, adopt chamber cap lifting subassembly 1079.The chamber cap actuator (by element 1080 ' schematically show) that is connected to chamber cap assembly 1033 can be as the part of chamber cap lifting subassembly 1079.The electric actuator of actuator 1080 ' preferably, and be linear DC servomotor in one embodiment.But, actuator 1080 ' can be pneumatically actuated air cylinder alternatively.In this structure, by making motor 1080 ' actuating, the volume of the treatment zone 1025 between the substrate 1250 of chamber cap lifting subassembly 1079 control porous plates 1030 and its below.The favourable air-flow and the oxygen level of near surface with control substrate 1250 of such layout.
In the description of handling substrate 1250, described be used for above-mentioned towards on the unitary various embodiment of electroless plating.But should be noted that during some service action desired is refers to not have on 1300 (or support rings) manipulation unit 1010 under the state of substrate in support.More specifically, fluid drawing-in system 1200 and fluid extraction system 1240 can not arranged in treatment zone 1025 under the situation of substrate and are operated.For example, deionized water or other cleanings or washing fluid can by fluid send arm (for example the fluid of Fig. 9 is sent arm 1406) or fluid send plate (for example porous plate 1030 of Figure 11) inject and be assigned to substrate supports refer to 1300 and other chamber components on.Can finish this step with clean substrate support refer to 1300 and other chamber components to reduce the fine grain level in the processing unit 1010.For further provide auxiliary in this cleaning, fluid is sent arm can reduce (Fig. 9 B), and the fluid delivery head can reduce (Figure 12) or the substrate supports assembly can raise (Fig. 9 A).
Though aforementioned at embodiments of the invention, of the present invention other can be changed with further embodiment and not depart from base region of the present invention, and base region of the present invention is indicated in the appended claims.
Claims (22)
1. electroless treatment chamber, it has the treatment zone that is suitable for handling substrate, and described electroless treatment chamber comprises:
Be positioned at the platen assembly in the described treatment zone, described platen assembly comprises:
Base member, it has the fluid bore of formation by it;
Fluid distribution member, it sealably navigates to described base member and has upstream side and the downstream side, and wherein said fluid distribution member has a plurality of fluid channels that fluid is communicated with between described upstream side and described downstream side;
Fluid displacement, it is formed between the upstream side of described base member and described fluid distribution member;
Feature portion, its downstream side from described fluid distribution member projects upwards first distance; With rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.
2. device as claimed in claim 1, wherein said fluid distribution member are discous substantially, and the surface of described feature portion is consistent with the outward flange of described discous fluid distribution member.
3. device as claimed in claim 1, wherein said first distance is between about 0.5mm and about 25mm.
4. device as claimed in claim 1, the downstream surface of wherein said fluid distribution member have the surfaceness (R between about 1.6 μ m and about 20 μ m
a).
5. electroless treatment chamber, it has the treatment zone that is suitable for handling substrate, and described electroless treatment chamber comprises:
Be positioned at the platen assembly in the described treatment zone, described platen assembly comprises:
Base member, it has the fluid bore of formation by it;
Fluid distribution member, it sealably navigates to described base member and has upstream side and the downstream side;
Fluid displacement, it is formed between the upstream side of described base member and described fluid distribution member; With
A plurality of fluid channels, it is formed in the described fluid distribution member, and wherein said a plurality of fluid channels fluid between the described upstream side of described fluid distribution member and described downstream side is communicated with, and in described a plurality of fluid channel at least one also comprises:
The first feature portion, it is communicated with described upstream side fluid and has first cross-sectional area; With
The second feature portion, it has second cross-sectional area, the wherein said first feature portion and
The described second feature portion fluid is communicated with; With
Rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.
6. device as claimed in claim 5, wherein said second cross-sectional area is greater than described first cross-sectional area.
7. device as claimed in claim 5, wherein said a plurality of fluid channels comprise:
The array of at least four fluid channels, it is evenly distributed on the described downstream side substantially; With
Cast feature portion, it projects upwards first distance from described downstream side, and wherein said first distance is between about 0.5mm and about 25mm.
8. device as claimed in claim 5, the arranged in arrays of wherein said fluid channel are square, rectangle, radially or the intensive orientation of sexangle.
9. device as claimed in claim 5, first drum that two or more parts that also comprise its length at least in wherein said a plurality of fluid channel are extended from described upstream side and second drum that is communicated with the described first drum fluid, wherein said second drum has than the big cross-sectional area of described first drum.
10. electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:
Rotatable substrate supports assembly, it is positioned in the treatment zone of described electroless treatment chamber and has one or more substrate support surface;
The edge dam abutment, it is positioned in the described treatment zone and has first surface, wherein said edge dam abutment and/or be positioned at substrate on described one or more substrate support surface and can be positioned between the edge of the described first surface of described edge dam abutment and described substrate and form the gap; With
Fluid source, it is located electroless treatment solution is delivered to the surface that is positioned the substrate on the described substrate supports.
11. device as claimed in claim 10, wherein said fluid source also comprise the fluid heater with the described electroless treatment solution thermal communication of sending from described fluid source.
12. device as claimed in claim 10, wherein said edge dam abutment also comprises lifting subassembly, the surface alignment that it is suitable for making described edge dam abutment with respect to being positioned at the described substrate on described one or more substrate supports.
13. an electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:
Rotatable substrate supports assembly, it is positioned in the treatment zone of described electroless treatment chamber, wherein said rotatable substrate supports assembly has one or more substrate supports feature portion, its each all have substrate support surface;
The basin body assembly, it is positioned in the described treatment zone and has the one or more walls that form fluid displacement, and the size of wherein said fluid displacement allows described one or more substrate supports feature portion to be immersed in the fluid that is arranged in described fluid displacement; With
Fluid source, it is communicated with described fluid displacement and the substrate fluid that is positioned on described one or more substrate support surface.
14. device as claimed in claim 13, wherein said electroless treatment chamber also comprises the fluid heater that is communicated with the described fluid thermal that is arranged in described fluid displacement.
15. device as claimed in claim 13, wherein said electroless treatment chamber also comprises lifting subassembly, and it is suitable for making the one or more walls location of described rotatable substrate supports assembly with respect to described basin body assembly.
16. device as claimed in claim 13, wherein said rotatable supporting component also comprises:
The plenum chamber that is communicated with described substrate support surface fluid;
With described plenum chamber be positioned the vacuum source that the substrate fluid on the described substrate support surface is communicated with.
17. an electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:
The substrate supports assembly, it is positioned in the treatment zone of described electroless treatment chamber, wherein said substrate supports assembly has the substrate supports feature portion at one or more intervals, its each all have substrate support surface;
The basin body assembly, it is positioned in the described treatment zone and has the one or more walls that form fluid displacement, and the size of wherein said fluid displacement allows the substrate supports feature portion at described one or more intervals to be immersed in the fluid that is arranged in described fluid displacement;
Motor, it is suitable for making the substrate supports feature portion rotation at described one or more intervals;
The gap, it is formed between the surface of described one or more walls of the surface of the substrate in the substrate supports feature portion that is positioned described one or more intervals and described basin body; With
Fluid source, it is communicated with described fluid displacement and the surfactant fluid that is positioned the substrate on described one or more substrate support surface.
18. an electroless treatment chamber, it is suitable for handling substrate, and described electroless treatment chamber comprises:
Be positioned at the platen assembly in the treatment zone, described platen assembly comprises:
Fluid distribution member, it has upstream side and downstream side, and a plurality of fluid channels of providing fluid to be communicated with between described upstream side and described downstream side are provided;
First base member, it has the first-class body opening that forms by it, wherein said first base member sealably navigates to described fluid distribution member, and described first-class body opening be formed on described fluid distribution member in described a plurality of fluid channels at least one fluid be communicated with; With
Second base member, it has second fluid bore that forms by it, wherein said second base member sealably navigates to described fluid distribution member, and described second fluid bore be formed on described fluid distribution member in described a plurality of fluid channels at least one fluid be communicated with; With
Rotatable substrate supports assembly, it is positioned in the described treatment zone and has substrate support surface, and wherein said rotatable substrate supports is suitable for respect to described platen assembly rotation.
19. a method of handling substrate in the electroless treatment chamber comprises:
With substrate orientation on the substrate receiving surface of substrate supports;
Described substrate supports is orientated as apart from pervasion component a distance;
Temperature-controlled fluid is flowed through being formed at a plurality of fluid channels in the described pervasion component, make described temperature-controlled fluid contact the first surface of described substrate;
Described substrate and described substrate supports are rotated with respect to described pervasion component; With
The electroless deposition treat fluid is distributed on the second surface of described substrate so that electroless plating is deposited on the described second surface.
20. method as claimed in claim 19 wherein distributes the step of described electroless deposition treat fluid also to comprise:
Make the electroless deposition treat fluid from source flow;
Use the moveable arm assembly nozzle to be positioned at the described second surface top of described substrate; With
Described electroless deposition treat fluid is assigned on the described substrate from nozzle.
21. method as claimed in claim 19 also is included in and described electroless deposition treatment liq is carried out degasification before being distributed in described electroless deposition treat fluid on the described second surface of described substrate.
22. a method of handling substrate in having the electroless treatment chamber of treatment zone comprises:
On the substrate receiving surface with the substrate supports of substrate orientation in remaining on described treatment zone;
Described substrate support surface is orientated as apart from the pervasion component a distance that remains in the described treatment zone;
Described substrate and described substrate supports are rotated with respect to described pervasion component;
Gas is flow to the described treatment zone from handling gas source;
Make fluid flow through being formed at a plurality of fluid channels in the described pervasion component;
Described substrate receiving surface is orientated as apart from pervasion component a distance, made the first surface of described substrate contact with described mobile fluid; With
The first electroless deposition treat fluid is distributed on the second surface of described substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/175,251 | 2005-07-06 | ||
| US11/175,251 US7654221B2 (en) | 2003-10-06 | 2005-07-06 | Apparatus for electroless deposition of metals onto semiconductor substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1900358A true CN1900358A (en) | 2007-01-24 |
Family
ID=37656337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006100985615A Pending CN1900358A (en) | 2005-07-06 | 2006-07-06 | Apparatus for electroless deposition of metals onto semiconductor substrates |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2007046156A (en) |
| KR (1) | KR101246838B1 (en) |
| CN (1) | CN1900358A (en) |
| TW (1) | TWI343840B (en) |
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| US7966968B2 (en) | 2007-04-27 | 2011-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electroless plating apparatus with non-liquid heating source |
| CN103160815A (en) * | 2011-12-14 | 2013-06-19 | 财团法人工业技术研究院 | Chemical water bath method coating equipment |
| TWI508793B (en) * | 2012-10-16 | 2015-11-21 | Screen Holdings Co Ltd | Substrate processing device |
| CN102057082B (en) * | 2008-04-07 | 2016-04-27 | Meco设备工程有限公司 | For the manufacture of the method and apparatus of solar cell |
| CN105551956A (en) * | 2015-12-29 | 2016-05-04 | 中国电子科技集团公司第五十五研究所 | Chemical palladium plating method for back through hole metallization seed layer of semiconductor |
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| JP3450179B2 (en) * | 1998-03-31 | 2003-09-22 | 京セラ株式会社 | Surface treatment equipment |
| JP3639151B2 (en) * | 1999-03-11 | 2005-04-20 | 株式会社荏原製作所 | Plating equipment |
| JP2003115474A (en) * | 2001-10-03 | 2003-04-18 | Ebara Corp | Substrate processor and processing method |
| JP3985858B2 (en) * | 2001-10-17 | 2007-10-03 | 株式会社荏原製作所 | Plating equipment |
| US7087117B2 (en) * | 2002-11-15 | 2006-08-08 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
| JP2004214508A (en) * | 2003-01-07 | 2004-07-29 | Ebara Corp | Method and apparatus for forming wiring |
| JP2004346399A (en) * | 2003-05-23 | 2004-12-09 | Ebara Corp | Method and apparatus for treating substrate |
| JP2005060722A (en) * | 2003-08-08 | 2005-03-10 | Ebara Corp | Method and apparatus for treating substrate |
| TWI351725B (en) * | 2003-10-06 | 2011-11-01 | Applied Materials Inc | Apparatus to improve wafer temperature uniformity |
| US7465358B2 (en) * | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
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- 2006-07-05 KR KR1020060062879A patent/KR101246838B1/en active IP Right Grant
- 2006-07-06 CN CNA2006100985615A patent/CN1900358A/en active Pending
- 2006-07-06 JP JP2006186953A patent/JP2007046156A/en active Pending
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| TWI508793B (en) * | 2012-10-16 | 2015-11-21 | Screen Holdings Co Ltd | Substrate processing device |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI343840B (en) | 2011-06-21 |
| JP2007046156A (en) | 2007-02-22 |
| KR101246838B1 (en) | 2013-03-28 |
| KR20070005511A (en) | 2007-01-10 |
| TW200800412A (en) | 2008-01-01 |
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