KR20070005511A - Apparatus for electroless deposition of metals onto semiconductor substrates - Google Patents

Abstract

An apparatus for an electroless deposition of metals onto a semiconductor substrate is provided to deposit a uniform layer without defects by using various fluid transfer paths of a fluid diffusing member. An apparatus for an electroless deposition of metals onto a semiconductor substrate includes a platen assembly(403) located at a processing region and a rotary substrate support assembly. The rotary substrate support assembly(414) is located on the processing region. The rotary substrate support assembly includes a substrate support surface. The platen assembly is composed of a base member with a fluid opening portion, a fluid diffusing member capable of sealing the base member, a fluid volume between the base member and an upstream side of the fluid diffusing member, and a feature protruded from an upper portion of a downstream side of the fluid diffusing member as much as a first distance. The fluid diffusing member includes a plurality of fluid paths.

Description

Apparatus for Electroless Deposition of Metals on Semiconductor Substrates {APPARATUS FOR ELECTROLESS DEPOSITION OF METALS ONTO SEMICONDUCTOR SUBSTRATES}

1 is a top view of an exemplary substrate processing system.

2 is an isometric view of an exemplary electroless deposition system and enclosure included in a substrate processing system.

3 is an isometric view of an exemplary electroless deposition system with the enclosure removed.

4 is a vertical cross-sectional view of an exemplary electroless deposition system enclosure.

5A is a vertical sectional view of an exemplary fluid processing station.

FIG. 5B is a cross-sectional view of an example platen assembly located within the fluid processing station shown in FIG. 5A.

FIG. 5C is an enlarged vertical cross-sectional view of a portion of the example platen assembly shown in FIG. 5B.

5D is an enlarged vertical cross-sectional view of a portion of another embodiment of an exemplary platen assembly located within a fluid processing station.

FIG. 5E is a vertical cross-sectional view of the exemplary platen assembly located within the fluid processing station shown in FIG. 5A.

5F is a vertical sectional view of an exemplary fluid processing station.

6 is an isometric view of an exemplary substrate support assembly.

7 is a vertical sectional view of an exemplary fluid processing station.

8A is an enlarged vertical cross-sectional view of an exemplary fluid processing station.

FIG. 8B is a vertical cross-sectional view of an exemplary edge partition located within the fluid processing station shown in FIG. 8A.

FIG. 8C is a cross-sectional view of another embodiment of an edge bulkhead located within the fluid processing station shown in FIG. 8A.

FIG. 8D is a cross-sectional view of the example edge partition shown in FIG. 8C with the edge partition contacting the substrate. FIG.

FIG. 8E is a cross-sectional view of the tip of an exemplary finger of the wafer holder assembly located within the fluid processing station shown in FIG. 8A.

FIG. 8F is a cross-sectional view of another embodiment of a tip of a finger of a wafer holder assembly located within the fluid processing station shown in FIG. 8A.

9 is a vertical cross-sectional view of an upwardly electroless treatment chamber using a nozzle disposed on a fluid delivery arm in the chamber.

9A is a vertical cross-sectional view of the electroless process chamber shown in FIG. 9 with the substrate support assembly in an elevated position.

9B is a vertical sectional view of an alternative embodiment of the electroless process chamber of FIG. 9.

10 is a horizontal cross-sectional view of the electroless process chamber of FIG. 9.

11 is a vertical sectional view of an alternative embodiment of an electroless treatment chamber.

FIG. 11A is a cross-sectional view of the electroless process chamber of FIG. 11 with a gas flow diverter located in the chamber. FIG.

FIG. 11B is another vertical cross-sectional view of the electroless process chamber of FIG. 11A with the gas flow diverter in an elevated position. FIG.

12 is a vertical sectional view of another embodiment of an electroless treatment chamber in which a chamber lid assembly is movable.

13 and 14 are embodiments of process fluid delivery systems including cross-sectional views of two embodiments of nozzles that may be used with the electroless process chambers disclosed herein.

※ Explanation of code for main part of drawing

401: substrate 402, 404: processing stations

403: platen assembly 445D, 446D: base member

405: fluid diffusion member 405A: upstream side

406, 408: fluid dispensing arm 411: ring

412: substrate support fingers 413: lift assembly

414: substrate support assembly 417: base plate member

The present invention relates to an electroless deposition system for semiconductor semiconductor processing.

Metallization of sub-100 nanometer size features is a fundamental technology for current and future generations of integrated circuit fabrication processors. In particular, for devices such as ultra-integrated-type devices, i.e. devices with integrated circuits of millions of logic gates, the multilevel interconnects of primary interest are those that are generally interconnected at high aspect ratios, i.e. at least about 25: 1. It is formed by filling the connection features with a conductor such as copper. In this dimension, conventional deposition techniques such as chemical vapor deposition and physical vapor deposition cannot be used to reliably fill interconnect features. As a result, plating techniques, namely electrochemical plating and electroless plating, have emerged as promising treatments for void-free filling of high aspect ratio interconnect features of up to 100 nanometers in integrated circuit fabrication processes. In addition, electrochemical and electroless plating processes have emerged as promising processes for depositing other layers, such as capping layers.

However, with regard to electroless plating processes, conventional electroless treatment systems and methods have encountered some problems, such as precise control of deposition processes and deposition layer defect rates. In particular, conventional systems do not provide good control of substrate temperature because resistive heaters and heat lamps used in conventional electroless cells, which are critical for uniformity of the electroless deposition process, do not consistently provide a uniform temperature across the substrate surface. I couldn't. In addition, conventional electroless systems do not control the environment inside an electroless deposition chamber, which has recently been found to have a substantially bad effect on defect rate.

In addition, environmental and cost-of-ownership (CoO) issues reduce waste of expensive electroless plating chemicals by reducing the flow required to obtain sufficiently uniform coverage on the receiving surface of the substrate. It is preferable. Since the rate and uniformity of electroless treatment solution delivery to the substrate surface can affect the deposition process results, an apparatus and method for uniformly delivering multiple treatment solutions are needed. In addition, substrate temperature control using heat conduction and heat convection movement at the back of the substrate is desirable when the liquid contacts and flows between the substrate and the support base plate member.

In addition, no functional and effective integration platform has been developed for an electroless deposition process capable of depositing uniform layers with minimal defects. As such, there is a need for an integrated electroless deposition apparatus capable of depositing uniform layers with minimal defects.

It is an object of the present invention to provide an integrated electroless deposition apparatus capable of depositing a uniform layer with minimal defects.

Embodiments of the present invention include a platen assembly including a base member located within a processing area and configured to penetrate a fluid aperture; A fluid diffusion member sealingly located in the base member and having an upstream side and a downstream side and having a plurality of fluid passages in fluid communication with the upstream side and the downstream side diffusion member); A fluid volume formed between the base member and the upstream side of the fluid diffusion member; A feature that projects at a first distance over the downstream side of the diffusion member; And a rotating substrate support located within the processing area and having a substrate supporting surface and rotating relative to the platen assembly.

Embodiments of the present invention also include a platen assembly including a base member positioned within a processing region and configured to penetrate a fluid aperture; A fluid diffusion member sealably located on the base member and including an upstream side and a downstream side; A fluid volume formed between the base member and the upstream side of the fluid diffusion member; A plurality of fluid passageways formed in the fluid diffusion member and in fluid communication with downstream and upstream sides of the fluid diffusion member, wherein at least one of the plurality of fluid passages is in fluid communication with the upstream side and has a first cross-sectional area; And a second feature having a second cross section wherein the first feature and the second feature are in fluid communication; And a rotating substrate support positioned within the processing region and having a substrate support surface, the rotating substrate support rotating about the platen assembly.

Embodiments of the present invention also provide a rotatable substrate support assembly positioned within a processing region of an electroless treatment chamber and having one or more substrate support surfaces; An edge dam located within the processing region and having a first surface, wherein the substrate located on the edge barrier and / or one or more substrate support surfaces can be positioned to form a gap between the first surface and the edge of the substrate. ; And a fluid source for delivering an electroless solution to the surface of the substrate located on the substrate support.

Embodiments of the invention also include a rotating substrate support assembly having one or more radially spaced substrate support features located within a processing region of an electroless treatment chamber, each having a substrate support surface; A bowl assembly having one or more walls located within the processing area and forming one or more radially spaced substrate support features and a fluid volume therein that is located therein; And a fluid heater in thermal communication with the fluid located within the fluid volume.

Embodiments of the present invention also include a platen assembly including a fluid diffusion member located within a processing region having an upstream side and a downstream side and a plurality of fluid passageways in fluid communication between the upstream side and the downstream side; A first base member formed therein, the first fluid aperture in fluid communication with at least one of a plurality of fluid passages formed in the fluid diffusion member, the first base member sealingly located to the fluid diffusion member ; A second base member having a second fluid aperture therein, the second fluid aperture in fluid communication with at least one of a plurality of fluid passages formed in four in the fluid diffusion portion, the second base member sealingly located at the fluid diffusion member; And a rotating substrate support assembly positioned within the processing region and having a substrate support surface and rotating relative to the platen assembly.

BRIEF DESCRIPTION OF THE DRAWINGS The above briefly summarized description is described in more detail with reference to embodiments so that the above-mentioned features of the present invention can be understood in more detail, some of which are illustrated in the accompanying drawings. However, since the accompanying drawings show only general embodiments of the invention and do not limit the scope of the invention, there may be many different equivalent embodiments.

1 illustrates one embodiment of a system 100. System 100 includes a factory interface 130 that includes a plurality of substrate loading stations 134 configured to interface with a substrate containing cassette. The factory interface robot 132 is configured to access and move the substrate 126 into and out of the cassette located within the factory interface 130 and located on the substrate loading station 134. The factory interface robot 132 extends into the link tunnel 115 connecting the factory interface 130 to the mainframe 113. The position of the factory interface robot 132 may approach the substrate loading station 134 to retrieve the substrate and then place the substrate at one of the processing cell positions 114, 116 located on the main frame 113, or optionally To the annealing chamber 135. Similarly, factory interface robot 132 may be used to recover substrate 126 from processing cell locations 114 and 116 or annealing chamber 135 after the substrate processing sequence is complete. In this case, the factory interface robot 132 may transfer the substrate 126 back to one of the cassettes located on the substrate loading station 134 to remove the substrate 126 from the system 100.

Factory interface 130 may also include a metrology inspection station 105 that may be used to inspect the substrate before and / or after processing of system 100. Metrology inspection station 105 may be used to analyze properties such as thickness, flatness, particle structure, shape, etc., of materials deposited on a substrate, for example. Exemplary metrology inspection stations that can be used in embodiments of the present invention include the BX-30 Advanced Interconnect Measurement System, and CD-SEM or DR-SEM inspection stations, all of which are Applied Materials in Santa Clara, California. It can be used commercially from the company. An exemplary metrology inspection station is also disclosed in US Patent Application No. 60 / 513,310 entitled "Plating System Using Integrated Substrate Inspection," filed October 21, 2003, which is incorporated herein by reference. The entire specification is incorporated by reference to the extent that it is inconsistent with the invention.

The annealing chamber 135 is a two position annealing chamber in which the cooling plate 136 and the heating plate 137 are adjacent to each other and the substrate transfer robot 140 is located close to these plates, for example between two stations. anneal chamber). The substrate transfer robot 140 is generally configured to move the substrate between the heating plate 137 and the cooling plate 136. System 100 may include a number of annealing chambers 135 that may be in a stacked configuration. In addition, although the annealing chamber 135 is shown to be located from access to the link tunnel 115, embodiments of the present invention are not limited to the specific configuration or arrangement of the annealing chamber 135. As such, the annealing chamber 135 is positioned to be in direct communication with the mainframe 113, ie accessible by the mainframe robot 120, or optionally the annealing chamber 135 is positioned to be in communication with the mainframe 113. That is, the annealing chamber is located in the same system as the mainframe 113, but is not in direct contact with the mainframe 113 or accessible from the mainframe robot 120. For example, as shown in FIG. 1, the annealing chamber 135 may be positioned to communicate directly with the link tunnel 115, which may access the mainframe 113 via robots 132 and / or 120. . Further description of the annealing chamber 135 and its operation is disclosed in US patent application Ser. No. 10 / 823,849 entitled "Two Position Annealing Chamber," which is incorporated herein by reference. The entirety is incorporated by reference.

The mainframe 113 includes a mainframe robot 120 located at the center. Mainframe robot 120 generally includes one or more blades 122, 124 configured to support and transport the substrate. In addition, the mainframe robot 120 and accompanying blades 122 and 124 allow the mainframe robot 120 to simultaneously insert and remove substrates to and from the multiple processing cell locations 102, 104, 106, 108, 110, 112, 114 and 116 located on the mainframe 113. It can be configured to extend, rotate, pivot and move independently. Similarly, factory interface robot 132 also moves linearly along robot track 150 to extend from factory interface 130 to mainframe 113 while rotating, extending, pivoting, and vertically moving substrate support blades. Have the ability to

In general, the processing cell locations 102, 104, 106, 108, 110, 112, 114, and 116 may be any number of processing cells used in a substrate processing system. In particular, the treatment cell or location may be an electrochemical plating cell, a rinsing cell, a bevel clean cell, a spin rinse dry cell, a substrate surface (collectively comprising a clean, rinse, and etch cell). As cleaning cells, electroless plating cells (including pre and post clean cells, excitation cells, deposition cells, etc.), metrology inspection stations, and / or other processing cells that can be advantageously used with deposition processing systems and / or platforms. Can be configured.

Each of the individual processing cell locations 102, 104, 106, 108, 110, 112, 114, 116 and the robots 132, 120 generally communicate with the system controller 111, which receives inputs from, and / or inputs from, and / or various sensors located in the system 100. It may be a microprocessor-based control system configured to properly control the operation of the system 100 in accordance with a predetermined processing recipe. The controller 111 generally includes a memory element (not shown) and a CPU (not shown) used to hold various programs by the controller 111, to process these programs, and to execute the programs as needed. The memory is connected to the CPU and may be one or more readily available memories, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage medium, local or remote. Can be. Software instructions and data may be coded and stored in memory to instruct the CPU. A support circuit (not shown) is also connected to the CPU to support the process in a conventional manner. The support circuit may include a cache, a power supply, a clock circuit, an input / output circuit, a subsystem, and everything known. The program (or computer instructions) readable by the controller 111 determines which tasks can be performed in the processing chamber. Preferably, the program is software readable by the controller 111 and includes instructions for monitoring and controlling the electroless process based on defined rules and input data.

In addition, the processing cell locations 102, 104, 106, 108, 110, 112, 114, and 116 communicate with a fluid delivery system, such as the fluid inlet system 1200 described below, which is configured to supply the necessary processing fluid to individual processing cell locations during processing. In general, the fluid delivery system (s) are controlled by the system controller 111. Exemplary treatment fluid delivery systems are disclosed in commonly assigned US patent application Ser. No. 10 / 438,624, entitled "Multi-Chemical Electrochemical Treatment System," filed May 14, 2003, which is incorporated herein by reference. The entire specification is incorporated herein by reference.

In an example system 100 such as shown in FIG. 1, processing cell points 102, 104, 106, 108, 110, 112, 114, and 116 may be configured as follows. Process cell points 114 and 116 are areas within the wet processing station on the mainframe 113, the interface between the normal dry processing station or link tunnel 115, the annealing chamber 135, and the factory interface 130. It can be configured as. The processing cell points 114, 116 located at the interface may be, for example, spin rinse dry cells and / or substrate clean cells. Each of the processing cell points 114 and 116 may comprise a spin rinse dry cell and a substrate clean cell in a stacked configuration. Optionally, process cell point 114 may comprise a spin rinse dry cell, and process cell point 116 may comprise a substrate clean cell. In yet another embodiment, each cell point 114, 116 may comprise a combination of spin rinse dry cells and substrate clean cells. Details of exemplary spin rinse dry cells that can be used in embodiments of the present invention are described in US Patent Application No. 10 / 680,616 entitled “Spin Rinse Dry Cells”, commonly filed October 6, 2003. And the entire US patent application specification is incorporated herein by reference to the extent that it is inconsistent with the invention.

Processing cell locations 106 and 108 may be composed of substrate cleaning cells, and in particular, processing cell locations 106 and 108 may be composed of substrate bevel cleaning cells. That is, the cells are configured to remove excess deposits from the perimeter, and optionally the substrate backside is completed after the deposition process. Exemplary bevel clean cells are commonly assigned and commonly assigned U.S. Patent Application No. No. " Integrated Bevel Clean Chamber " 10 / 826,492, which is incorporated herein by reference. In addition, embodiments of the present invention may omit processing cell points 106 and 108 in the system 100, if desired. Additionally, processing cell points 106 and 108 may be configured as electroless processing cells or cell pairs, described further below.

The processing cell points 102, 104, 110, 112 may be configured as electroless processing cells. The electroless processing cell points 102, 104, 110, and 112 represent a mainframe 113 inside the processing enclosure 302 in the situation where two processing cells are located in each processing enclosure 302. ) In other words, the processing cell points 110, 112 operate as first and second processing cells in the first processing enclosure 302, and the processing cell points 102, 104 are created in the second processing enclosure 302. It can operate as third and fourth processing cells. Additionally, as mentioned above, embodiments of the present invention, if desired, include processing enclosure 302 where processing cell points 106 and 108 are located above processing cell points 106 and 108. It is contemplated that these processing cell points 106, 108 may be configured to operate in a similar fashion as the processing cell points 102, 104, 110, 112.

Electroless treatment cells located in the processing enclosure 302 may be plated or plated support, such as, for example, electrochemical plating cells, electroless plating cells, electroless activation cells, and / or substrate rinse or clean cells. (support) cells may be included. In the exemplary electroless system 100, in each of the pair of cells on the system 100 one fluid processing cell becomes an activation cell and the other processing cell of the pair becomes an electroless deposition cell. Typically, such a configuration is replicated on opposite sides of the system 100 in opposing processing enclosures 302. Although the present invention is not limited to any particular configuration, for example, treatment cell point 102 is configured as an electroless active cell, while treatment cell point 104 is configured as an electroless deposition cell. Similarly, process cell point 112 is configured as an electroless active cell, while process cell point 110 is configured as an electroless deposition cell. In general, the processing cells in each processing enclosure 302 operate independently of each other under the control of the system controller 111.

2 is a schematic diagram of an exemplary electroless deposition system 100 and an enclosure 302 shown, for example, at processing cell points 110 and 112. The hardware of the processing cell points 110 and 112 has been omitted in FIG. 2 for clarity. The processing enclosure 302 defines a controlled processing environment near the pair of processing cell points 110, 112. The processing enclosure 302 may include a central interior wall 308 that separates the processing volume into two processing volumes 312 and 313 that are substantially the same size. The central interior wall 308 is optional, but if implemented, generally the central interior wall 308 creates a first processing volume 312 above the processing cell point 110 and a second processing volume (above the processing cell point 112). 312, 313). The first and second processing volumes 312, 313 are substantially separated from each other by a central inner wall 308; However, a notch or slot 310 is formed inside the lower portion of central inner wall 308. Slot 310 is sized to receive a substrate transfer shuttle 305 located between processing cell points 110, 112. In general, the substrate transfer shuttle 305 is configured to transfer the substrate between the respective processing cells 110, 112 without requiring the use of the mainframe robot 120. The substrate transfer shuttle 305 is oriented with an arrow 303 (shown in FIG. 1) so that the distal substrate support end of the substrate transfer shuttle 305 can transfer the substrate between the respective processing cell points 110, 112. And a vacuum chuck-type substrate support member configured to pivot near a point. In addition, each of the individual processing volumes 312 and 313 is a connection port 304 that is stably configured to allow a robot, such as mainframe robot 120, to access the individual processing volumes 312 and 313 for insertion and removal of substrates. It may include.

In addition, each of the individual processing volumes 312 and 313 is an environmental control assembly 315 located in the upper portion of the individual processing volumes 312 and 313 (shown in FIG. 2 with contacts with the processing enclosure removed for clarity). It includes. Environmental control assembly 315 includes a process gas source (not shown) in fluid communication with process volumes 312 and 313 and configured to provide process gas to individual process volumes 312 and 313. The process gas source generally provides a separate flow volume for controlled flow of inert gases such as nitrogen, helium, hydrogen, argon and / or mixtures thereof or other gases commonly used in semiconductor processing. The environmental control assembly 315 also includes a specific filtration system, such as a high efficiency particulate air (HEPA) filtration system. Certain filtration systems are used to remove particulate contaminants from the gas stream entering the treatment volumes 312 and 313. In addition, certain filtration systems are used to generate a generally linear and equivalent flow of process gas to the bottom process cell points. In addition, the environmental control assembly 315 may include devices configured to control humidity, temperature, pressure, and the like in individual processing volumes 312 and 313. The system controller 111, along with the various components of the system 100, is an environmental control assembly in accordance with one of the processing recipes or inputs received from sensors or detectors (not shown) located in the processing volumes 312 and 313. And the operation of the discharge port 314.

In operation, process gas is generally provided to process volumes 312 and 313 by environmental control assembly 315. Treatment gases are injected into the individual treatment volumes 312 and 313 to fill a closed process internal environment with an inert gas, for example treatment volumes 312 and 313 with a gas such as oxygen that can alleviate the electroless plating process. Inside is cleaned. Generally, the processing gas source is near the upper or upper portion of the processing volumes 312 and 313 above the processing cell points 110 and 112 and near the center of the individual processing volumes 312 and 313. Process gas is injected. In general, the process gas is HEPA-type filtration system configured to minimize airborne particles and to equalize the flow rate and direction of the process gas such that the gas flows at a uniform and continuous flow rate towards the processing cell points 110, 112. Is injected into the processing volumes 312 and 313.

Each of the processing cell points 110, 112 is at least one outlet port 314 positioned to encourage a uniform flow of processing gas from the gas supply to the processing cell points 110, 112 in the environmental control assembly 315. (Or a plurality of radially located outlet ports 314, if desired). The discharge port 314 may be located under the substrate being processed at the individual processing cell points 110, 112, or optionally radially outward from the individual processing cell points 110, 112. Regardless of the positioning, the discharge port 314 is configured to promote a uniform flow of process gas while selectively discharging fluid and chemical vapor from the individual process cell points 110, 112.

A typical process for supplying inert gas to the processing volumes 312 and 313 includes supplying an inert gas at a flow rate between about 10 slm and about 300 slm, or more specifically, between about 12 slm and about 80 slm. In general, the flow rate should be sufficient to minimize the amount of undesirable gas generated by residual or leaking in the processing volume. The flow rate of the inert gas is reduced when the individual processing volumes 312 and 313 are closed, ie when the connection port 304 is closed. When the connection port 304 is opened, i.e., when the substrate is transported in and out of the processing enclosure 302, the processing gas flow rate is increased to cause the outflow of gas from the processing enclosure 302. The outflow of this gas is configured to prevent atmospheric gases, in particular oxygen, from entering the interior of the processing enclosure. Once the connection port 304 is closed, the process gas flow rate can be reduced to a flow rate that allows substrate processing. This flow rate is maintained for a period of time prior to starting substrate processing, such that randomly entering oxygen is removed from the processing volumes 312 and 313 before starting the processing sequence. Discharge port 314 works in conjunction with a process gas supply to remove oxygen from process volumes 312 and 313. Discharge port 314 is generally in communication with a standard manufacturing facility discharge system and is used to remove process gas from process volumes 312 and 313. In an optional embodiment of the present invention, the processing volumes 312 and 313 may comprise a vacuum pump positioned in fluid communication with the processing volumes 312 and 313. Vacuum pumps may be used to further reduce the presence of unwanted gases in the processing volumes 312 and 313. Regardless of the discharge or pump configuration, the environmental control assembly 315 generally maintains the oxygen content within the processing volumes 312 and 313 to about 500 ppm or less during substrate processing, or more specifically, about 100 ppm or less during substrate processing. Is configured to.

The combination of the environmental control assembly 315, the exhaust port 314, and the system controller 111 allows the system 100 to control the oxygen content of the processing volumes 31, 313 during a particular processing step, and the first processing step. Requires a first oxygen content for optimal results and the second treatment step requires a second oxygen content for optimal results, the first and second oxygen contents being different from one another. In addition to the oxygen content, the system controller 111 may be configured to control other parameters of the processing enclosure, such as temperature, humidity, pressure, etc., as desired for the particular processing sequence. These specific parameters are included in the environmental control assembly 315 and are located in fluid communication with the processing volumes 312 and 313 and can be controlled by the system controller 111 such as a heater, cooler, wetting machine, dehumidifier, vacuum It can be modified by pumps, gas sources, air filters, fans and the like.

Treatment volumes 312 and 313 are generally sized to facilitate the electroless plating process. That is, the processing volumes 312 and 313 are low during the processing phase while the gas supply of the environmental control assembly 315 allows sufficient volume to support evaporation of fluid solutions in the volume without vapor saturation of the processing volumes 312 and 313. Oxygen content (generally less than about 500 ppm, or more specifically less than about 100 ppm) may be maintained. Regarding the volume of head spacing generally required to prevent steam saturation, the inventors have found that the head spacing for each treatment point 110, 112 is between about 1000 in ³ and about 5000 in ³ for a 300 mm substrate treatment point. I found that. As such, when configured for 300 mm substrate processing, the head spacing for the processing volumes 312 and 313 of the present invention may be, for example, between about 1500 in ³ and 5000 in ³ , or between about 2000 in ³ and about 4000 in ³ , Or between about 2000 in ³ and about 3000 in ³ . As such, the vertical spacing of the top of the processing volumes 312, 313 from the top surface of the substrate located at one of the processing cell points 110, 112 to the area of the processing point (these volumes are generally regarded as head spacing) Generally have a height between about 6 inches and about 40 inches and a diameter or cross section of treatment points 110, 112. In particular, the head spacing is from about 12 inches to about 36 inches in height, and generally the horizontal dimension of the processing volumes 312 and 313 is about 10% greater than the diameter of the substrate being processed at the individual processing cell points 110 and 112. To the periphery of individual processing cell points 110, 112 of size to about 50% larger. These dimensions are important for the operation of the apparatus of the present invention, as they indicate that smaller processing volumes tend to exhibit vapor saturation that adversely affects the electroless plating process. As such, the inventors have found that proper head spacing (cross-sectional area of the treatment point relative to the spacing above the enclosure from the substrate) is important in preventing vapor saturation and related defects.

In general, the processing volumes 312 and 313 are insulated from each other, while the slot 310 allows gases in one processing volume to pass into adjacent processing volumes. As such, embodiments of the present invention provide higher pressure in one processing volume than in adjacent processing volumes. This pressure difference enables control of crosstalk between individual processing volumes 312 and 313 because the gas flow between the processing volumes is in the same direction and at the same speed if the pressure difference is maintained. Thus, one of the processing cells may be configured as a cold processing cell, such as an active cell, and the other processing cell may be configured as a heat treatment cell, such as an electroless deposition cell. In this embodiment, the heat treatment cell is pressurized to a higher pressure, and as such, the heat fluid treatment cell always flows gas through the slot 310 into the cooling fluid treatment cell. This configuration prevents the cooling treatment cell from reducing the temperature of the heating treatment cell because the heat treatment cell, ie the electroless deposition cell, is more susceptible to damage as a result of temperature change than the cooling fluid treatment cell such as the active cell. .

In another embodiment, the individual processing volumes 312 and 313 may be completely insulated from each other by the central inner wall 308. That is, the substrate transfer shuttle 305 and the slot 310 are removed. In this embodiment, the mainframe robot 120 individually assists or accesses the insulated processing volumes 312 and 313 through the individual connection ports 304 and transfers the substrate between the individual processing volumes 312 and 313. Can work.

3 is a perspective view of an exemplary deposition station 400 with the processing enclosure 302 removed. Deposition station 400 generally represents an embodiment of the processing cells shown in FIGS. 1 and 3. The processing cells shown in deposition station 400 may be an electroless active station 402 and an electroless deposition station 404. The substrate transfer shuttle 305 is located between the stations 402, 404 and is configured to transfer the substrate between each station 402, 404. Each station 402, 404 includes a rotary substrate support assembly 414 configured to support a substrate 401 for processing at each station in a face up orientation. That is, the processing surface of the substrate 401 faces away from the substrate support assembly 414. In FIG. 3, the station 402 does not include the substrate 401 shown on the substrate support assembly 414, but the station 404 is mounted and the substrate support assembly 414 to represent individual stations in an empty state. And a substrate 401 supported on. In general, the hardware configuration of the individual stations 402, 404 is the same; However, embodiments of the present invention are not limited to a configuration in which stations 402 and 404 have identical hardware therein. For example, the inventors believe that the deposition station 404 may be a platen assembly 403 as described in more detail herein, and that the electroless active station 402 may be configured without the platen assembly 403. Is considering.

The substrate support assembly 414 shown in the cross-sectional view of FIG. 4 includes a ring 411 having a plurality of vertically extending substrate support fingers 412 extending therefrom. Generally, substrate support fingers 412 include an upper horizontal surface configured to support an edge or bevel of substrate 401, as shown at processing point 404 in FIGS. 3 and 4. Substrate support fingers 412 may also include a vertical post member 415 positioned for centering the substrate 401 on respective support fingers 412. In addition, the substrate support assembly 414 is shown and described in detail with reference to FIG. 4 and includes a ring 411, and support fingers 412 for mounting and removing the substrate 401 from the respective stations 402, 404. Lift assembly 413 configured to operate vertically.

Each of the individual stations 402, 404 is a dispensing arm 406, 408 configured to pivot over the substrate 401 during processing to dispense the processing fluid on the front or protruding surface of the substrate 401. It includes. In addition, the dispensing arms 406 and 408 can be configured to be positioned perpendicular to the substrate. That is, the fluid dispensing portion of the dispensing arms 406 and 408 is between about 0.5 mm and about 30 mm, or more specifically between about 5 mm and about 15 mm, or about 4 mm from the surface of the substrate 401 to be treated. And between about 10 mm. The vertical and / or angular position of the fluid distribution of the dispensing arms 406 and 408 can be adjusted during processing of the substrate, if desired. One or more fluid conduits may be included within the dispensing arms 406 and 408 such that the dispensing arms 406 and 408 may be configured to dispense a plurality of processing fluids on the substrate 401. In one embodiment, one or more fluid inlet systems 1200, described below with respect to FIGS. 9 and 9A-9B, dispense arms 406 and / or 408 to deliver processing fluid to the substrate 401 surface. Is connected to.

Exemplary solutions that can be dispensed by the dispensing arm 406 or the dispensing arm 408 include rinse solutions, cleaning solutions, active solutions, electroless plating solutions, and other fluid solutions needed to support the electroless deposition process. In addition, fluid conduits (not shown) of each dispensing arm 4-6, 408 can be heated / cooled to control the temperature of the fluids dispensed. Heating / cooling of the female conduit offers the advantage that it does not take time for cooling before the fluid is dispensed on the substrate. This configuration thus improves electroless deposition uniformity with respect to temperature. In addition, the ends of the fluid dispensing arms 406, 408, that is, the point where the processing fluid is dispensed, are fluidly positioned in embodiments of the present invention. In this way, the spacing between the fluid distribution of the dispensing arms 406 and 408 and the substrate surface can be adjusted. This spacing allows to reduce splashing of the treatment solutions and to control the positioning of the fluid dispensing action on the fabrication surface of the substrate.

4 is a cross-sectional view of an exemplary pair of processing stations 402, 404. 4 also shows a processing enclosure 302 defining first and second processing volumes 312 and 313 separated by a central interior wall 308, as described above with respect to FIG. 2. Each of the processing stations 402, 404 includes a substrate processing platen assembly 403 that forms a substantially planar top surface configured to be positioned directly below the substrate during processing. The platen assembly 403 shown in detail in cross section in FIG. 5A is a fluid disposed over the base plate member 417 such that a fluid volume 410 is formed between the fluid diffusion member 405 and the base plate member 417 as a whole. A diffusion member.

4 and 5A, the fluid supply conduit 409 is positioned in fluid communication with the fluid volume 410 and the fluid diffusion member 405. In one aspect, a fluid source 409B, such as a deionized water source or an injection gas source, is configured to deliver fluid to fluid volume 410 through fluid supply conduit 409. In another aspect, fluid delivered from fluid source 409B may be heated by passing the fluid through fluid heater 409A prior to entering fluid 401. Fluid heater 409A is used to control the temperature of the fluid delivered to fluid volume 410. Fluid heater 409A may be any type of device that energizes a temperature controlled fluid. Preferably the heater is of any type of jacketed type resistive heater (e.g., through the injection tube wall) rather than an immersion type heater (e.g., a heater member in contact with the solution). Heater to be heated). The fluid heater 409A used in combination with the controller 111 and a temperature probe (not shown) can be used to set the temperature of the fluid entering the fluid volume 410 to the desired temperature.

In one aspect, an optional fluid flow baffle 416 is attached to the base plate member 417 and the fluid volume 410 between the end of the fluid supply conduit 409 and the bottom surface of the fluid diffusion member 405. Is located in. Fluid baffle 416 allows temperature control of fluid delivered from fluid source 409B and fluid heater 409A uniformly delivered to fluid diffusion member 405.

Base plate member 417 and fluid diffusion member 405 may be formed of a ceramic material (fully pressurized aluminum nitride, alumina Al ₂ O ₃ , silicon carbide (SiC)), polymer coated metal (Teflon ^™ polymer coated aluminum or stainless steel) , Polymeric material, or other materials suitable for semiconductor fluid processing. Preferred polymer coatings or polymer materials include Tefzel (ETFE), Halar (ECTFE), perfluoroalkoxy resins (PFA), polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoropropylene ( Fluorinated polymers such as FEP), polyvinylidene fluoride (PVDF) and the like. A detailed description of the construction, components, and operation of the fluid treatment cell 500 of the present invention is filed and jointly filed on October 6, 2003, entitled "Apparatus to Improve Wafer Temperature Uniformity for Face-Up Wet Processing". US patent application Ser. No. 10 / 680,325, which reference is made to the extent that it is inconsistent with the present invention.

Referring to FIG. 5A, in operation, the substrate 401 is secured to the support fingers 412 and disposed vertically directly above the fluid diffusion member 405. The space 450 between the fluid diffusion member 405 and the substrate 401 is filled with a temperature control fluid delivered from the fluid source 409B and the heater 409A, and the fluid supply conduit 409 and the fluid diffusion member 405 Is distributed through. The temperature control fluid contacts the backside of the substrate 401 and transfers heat therefrom to heat the substrate. In this embodiment, the substrate is generally disposed parallel to the top surface of the fluid diffusion member 405, in particular about 0.5 mm to about 2 mm away from the top surface of the fluid diffusion member 405. In one embodiment, the substrate 401 is rotated relative to the diffusion member 405 and the temperature control fluid flowing from the diffusion member 405 by a support motor 443 (FIG. 4) attached to the substrate support assembly 414. do. Rotation of the substrate 401 relative to the diffusion member 405 and the temperature control fluid may be advantageous to improve heat transfer between the temperature control fluid and the substrate 401.

In another embodiment, the interior of the platen assembly 403 includes a heater 433, which may be a resistive heater configured to increase the temperature of the platen assembly 403 to transfer heat to the substrate 401 being processed. It may include. In one embodiment, the fluid supply 409B and the fluid heater 409A carry temperature controlled fluid through the fluid supply conduit 409 before the fluid contacts the substrate 401 disposed on the support fingers 412. It can be configured to deliver. In such a configuration, the heaters (eg, elements 433 and 409A) are system controller 111 such that the system controller 111 can regulate the operation of the respective heaters to control the temperature of the substrate and temperature control fluid being processed. ) Can be communicated with.

The fluid diffusion member 405 includes a plurality of holes 407 formed therethrough, and the plurality of holes 407 may pass the downstream side or top surface 453 of the fluid diffusion member 405 into the fluid diffusion member 405. To the bottom or upstream side 405A of the < RTI ID = 0.0 > The peripheral portion of the fluid diffusion member 405 is generally in sealed communication with the base plate member 417, likewise fluid may be introduced into the fluid volume 410 by the fluid supply conduit 409 and sealed due to fluid inflow. Flows uniformly through the holes 407 formed in the fluid diffusion member 405 as a result of the fluid back pressure pressure generated in the fluid volume 410. Fluid Thus, volume 410 is closed by upstream side 405A of fluid diffusion member 405 and inner surface 417A of base plate member 417.

In one embodiment, the fluid diffusion member 405 may generally include about 10 to about 200 holes 407 having a diameter of about 0.5 mm to about 15 mm, or particularly about 0.7 mm to about 3 mm in diameter. have. The holes 407 may be disposed perpendicular to the top surface 453 of the fluid diffusion member 405 or optionally at an angle with respect to the top surface 453. The holes 407 may be disposed at an angle of about 5 ° to about 45 ° with respect to the vertical axis so that the fluid easily flows out across the surface of the fluid diffusion member 405. In addition, the holes 407 disposed at an angle may be configured to reduce fluid turbulence.

5B illustrates another embodiment of a fluid diffusion member 405 having multiple facets 452 and a partition 451 to improve temperature controlled fluid distribution uniformity on the surface of a substrate disposed on support fingers 412. Describe an example. In one embodiment, the inlet with the, if the holes 452 are small in diameter (element D _1, Fig. 5c) than the diameter (element D _2, Fig. 5c) of the outlet section (452B) as shown in Fig. 5b-5d Has section 452A. In this configuration, the small inlet section 452A of the multi-faceted holes 452 is sized to limit the fluid flowing through the multi-faceted holes 452 to improve the flow uniformity on the surface of the substrate and the fluid diffusion member 405. The outlet section 452B (item # D ₂ ) reduces the speed of the temperature controlled fluid exiting the outlet section 452B and also reduces the downstream side or top surface 453 (FIG. 5C) of the fluid diffusion member 405. Larger than the inlet section 452A (item # D ₁ ) to reduce the surface area. Reducing the surface area of the top surface 453 is advantageous because this decrease reduces the chance of forming areas on the backside of the substrate that are not in contact with the flowing temperature control fluid or "dry areas." The formation of these "dry regions" is affected by the surface tension of the flowing temperature control fluid and the ability of the temperature control fluid to wet the top surface 453 of the fluid diffusion member 405 and / or the substrate surface. In one embodiment, the top surface 453 of the fluid diffusion member 405 with _a surface roughness Ra of from about 11.6 micrometers (μm) to about 20 micrometers (μm) to improve the fluid ability to wet the top surface. It may be desirable to roughen). If the "dry region" is large enough, temperature uniformity across the substrate will be affected by the lack of heat transferred from the temperature control fluid to the substrate and thus affect the deposition process results. In one embodiment, the top surface 453 is roughened by the use of a bead blasting or grit blasting process. While the foregoing discussion describes the use of holes having a "diameter," other embodiments of the multi-faceted hole may have different shaped regions (eg, rectangular, octagon, etc.) having a constant or variable cross-sectional area through the diffusion member 405. Consider the use of). In one embodiment of the present invention, the size and shape of the multifaceted holes 452 may be varied throughout the surface of the diffusion member 405 to achieve proper fluid coverage, heat transfer profile and / or process results.

The partition 451 or "rising portion" projects above the top surface 453 of the fluid diffusion member 405 and a flowing temperature control fluid (item "A" in FIG. 5B) is formed between the substrate and the top surface 453. It is an annular ring generally used to collect and suppress the flow of temperature control fluid flowing when remaining in the space 450. Thus, partition 451 is used to minimize or eliminate the formation of “dry regions” because partition 451 is used before the temperature control fluid discharged from the multifaceted holes 452 flows over partition 451. This is because it is collected. Thus, the partition 451 tends to hold the temperature control fluid or to cause the temperature control fluid to pull on the top surface 453 of the fluid diffusion member 405. Referring to FIG. 5C, in one embodiment, the partition 451 protrudes about a distance “X” above the top surface 453, where the distance “X” is about 0.5 mm to about 25 mm.

Figure 5c shows in detail the edge of the cross-sectional view shown in figure 5b. In one embodiment of the platen assembly 403, the outer diameter D ₃ (ie, outer surface) of the partition wall 451 and the fluid diffusion member 405 is smaller than the diameter of the substrate (Item # D ₄ ). This configuration is the top surface (item #W ₁₎ minimize the opportunity to contact the fluid dispensed on to the temperature control fluid and the components of the distribution on the upper surface of the substrate fluid to the back side of the substrate (item #W ₂₎ of the substrate It is preferable because it prevents contamination.

FIG. 5C illustrates one of the platen assembly 403 including holes 452 if it has two features, an inlet section 452A and an inlet section 452B evenly spaced at a distance “L” as described above. Examples are described. As shown in FIG. 5C, inlet section 452A has a depth H ₁ , and inlet section 452B has a depth H ₂ . FIG. 5D illustrates a fluid diffusion member 405 with multi-faceted holes 542 having surfaces that are not perpendicular to each other (Item # 454A-C) to change more gently from inlet section 452A to inlet section 452B. Another embodiment of) is described. For example, in one embodiment, it may be desirable to make an angle of 60 degrees between the centerline of the holes and the surface 454B. The surfaces shown in FIG. 5D (Item # 454A-C shown) and the shape of the surfaces (ie, linear or nonlinear (eg, exponential curve, quadratic curve, etc.)) do not limit the scope of the present invention. While FIGS. 5C-5D describe holes that are coaxial, such as holes having a coincident axis of symmetry, other embodiments describe features that are not symmetrical or have no coincident centers of symmetry without departing from the basic scope of the present invention. Can have

5E depicts an isometric cross-sectional view of platen assembly 403 describing one embodiment for a multi-sided hole pattern across fluid diffusion member 405. In one embodiment, as shown in FIG. 5E, the multi-sided hole 452 pattern is arranged in a rectangular hole pattern (eg, L ₁ × L ₁ ). In other embodiments, the fluid diffusion member 405 may have an entire surface with an array of sectors, quadrants, or holes, wherein the array of holes is hexagonal closed pack pattern (ie, six equidistantly spaced apart). Circular hole pattern surrounded by holes), rectangular hole pattern, radially symmetrical hole pattern, and / or other to improve or adjust the temperature profile across the substrate to improve the uniformity of the electroless deposition process performed on the substrate surface. It is arranged in a non-uniform hole pattern.

5F illustrates a platen assembly 403 that divides the fluid volume 410 into two regions capable of delivering one or more temperature control fluids at different temperatures into the space 450 between the fluid diffusion member 405 and the substrate 401. Is a cross-sectional view illustrating one embodiment. Such a configuration can be useful for achieving the desired temperature profile across the substrate to achieve the desired electroless deposition process results. In such a configuration, the platen assembly 403 can include a first region hardware assembly 447 and a second region hardware assembly 448. The first region hardware assembly 447 can include a first fluid supply conduit 446A, a first fluid heater 446B, a first fluid source 446C, and a first base member 446D. The second region hardware assembly 447 can include a second fluid supply conduit 445A, a second fluid heater 445B, a second fluid source 445C, and a second base member 445D. In the configuration shown in FIG. 5F, the second base member 445D is the base member 417 shown in FIGS. 5A and 7. In one embodiment, the first region hardware assembly 447 is configured to deliver a first temperature control fluid (assembly “B”), and the second region hardware assembly 448 is disposed on the support fingers 412. Configured to deliver a second temperature control fluid (element “A”) to the substrate 401, the first and second temperature control fluids being at different temperatures. In another embodiment of the present invention, the interior of the platen assembly 403 may include a first base member 446D of the first region hardware assembly 447 and / or a second base member of the second region hardware assembly 448. One or more resistive heaters (not shown) used to increase the temperature of the fluid in 445D. In this configuration, the heaters (eg, resistance heaters, element 445B, element 446B) are in communication with the system controller 111 so that the system controller 111 is at the temperature of the substrate and temperature control fluid being processed. In order to control the operation of each heater can be adjusted. While FIG. 5F describes one embodiment of a platen assembly 403 comprising two regions, in another embodiment of the present invention three or more regions capable of individually controlling the temperature of the fluid in contact with the substrate. It may be desirable to divide the fluid volume 410 into. In one embodiment, the individually heated fluids are supplied to the other areas of the backside of the substrate through individual holes 407 or groups of holes 407, thus allowing the flow of heated fluid flowing through the individual holes 407. As a result of the temperature and the location of the individual holes 407, changes in temperature throughout the substrate can be controlled. Such an embodiment may be used, for example, to generate increased temperature near the center or edge of the substrate during processing.

In another embodiment of the present invention, the fluid diffusion member 405 may comprise a porous material, such as porous ceramic, for example configured to allow fluid to flow there through. In one embodiment, the porous ceramic material is, for example, an alumina oxide material. In this embodiment, the holes 407 are generally not required, but the inventors considered implementing some holes 407 in connection with the porous fluid diffusion member 405 to increase the fluid flow as needed. In one embodiment, the fluid diffusion member 405 may comprise a porous plastic material, such as polyethylene, polypropylene, PVDF, PTFE, Teflon or other compatible porous plastic material. Plastic materials having a hydrophilic surface may be advantageous for promoting "wetting" of fluid diffusion member 405 surfaces.

In one embodiment, the fluid diffusion member 405 is designed with pores having a size of about 0.1 micrometers to about 500 micrometers. Since the fluid flow resistance through the fluid diffusion member 405 is a function of the distance that fluid travels through the flow fluid diffusion member 405, the vertical height of the fluid diffusion member 405 may be changed to provide the appropriate fluid flow characteristics. Can be.

4 and 7, the process for setting the position of the substrate for processing generally includes moving the lift assembly 413 between the loading position and the processing position. The lift assembly 413 is shown in the loading position of the left processing station 402 of FIG. 4, where the lift assembly is in a vertical position such that the support fingers 412 extend above the upper catch ring 418. In this position, the distribution arms 406 are vertically spaced vertically over the support fingers 412 to load the substrate 401. Distribution arm 406 (and other fluid distribution arms of the electroless deposition system) includes a fixed base member 426 that telescopically receives the complementary arm member 425. The drive motor moves the upper arm member 425 telescopically relative to the base member 426 to adjust the vertical position of the dispensing arm 406. The substrate 401 is disposed on the support fingers 412 by the mainframe robot 120 or the substrate transfer shuttle 305, and the support fingers 412 are separated from each robot / shuttle 120, 305 by the substrate ( It can be operated vertically to move 401. Once the substrate 401 is supported by the supporting fingers 412 on the robot / shuttle 120, 305, the robot / shuttle 120, 305 can be removed from below the substrate 401, and the supporting fingers ( 412 may be lowered to the treatment position.

The lift assembly 413 is described in the processing position of the right processing station 404 of FIG. 4, where the lift assembly 413 is in a vertical position where the support fingers 412 are close to one of the catch rings 418, 419. It is disposed vertically to place the substrate 401. In the processing position, the fluid dispensing arm 408 is disposed lowered close to the top surface of the substrate 401 as described in the processing station 404 of FIG. 4. The lift assembly 413 is generally operated by a powered jack screw assembly 427 configured to operate the wrist assembly 413 and components attached thereto vertically. In particular, the lower portion of the fluid treatment cell is attached to and moves in interaction with the lift assembly 413. The lower portion of the processing cell generally includes a substrate support assembly 414 (including support fingers 412 and a ring 411), lower interleaving walls 424, and an inlet port 314.

4 and 7, in one embodiment, the platen assembly 403 remains stationary and includes lift assembly 413 components (eg, support fingers 412, ring 411). Do not move together. In this configuration, the base plate support 442 coupled to the base plate member 417 and the fluid diffusion member 405 is mounted to the mainframe 113 through one or more structural supports (not shown). Thus, in this embodiment, the base plate support 442, the base plate member 417 and the fluid diffusion member 405 do not move in parallel when the substrate lift assembly 413 raises the substrate support assembly 414 or The support motor 443 rotates as it rotates the substrate support assembly 414. In one embodiment, the substrate support assembly 414 includes one or more bearings (not shown; see elements 1054A-B in FIG. 9) that support and guide the substrate support assembly 414 components relative to the base plate support 442. )) To the base plate support 442. This embodiment requires the use of an unreliable rotating fluid seal (not shown), which may require particles of the base plate member 417 and the fluid diffusion member 405 to generate particles that may be detrimental to device yield performance. Is advantageous. In one embodiment, base plate support 442 receives electrical wires (not shown) and fluid supply conduit (s) 409 (FIGS. 5A and 7).

Referring to FIG. 6, the substrate support assembly 414 generally includes support fingers 412, a vertical post member 415, a substrate support surface 415A, and a ring 411. The substrate disposed on the substrate support surface 415A is captured or held by the vertical post members 415. In one embodiment of the invention, the substrate support assembly 414 will not affect the thermal expansion of the various components of the substrate support assembly 414 to retain the substrate rest on the substrate support surface 415A. Thermal expansion of the substrate support assembly 414 may misplace and / or damage the substrates disposed at regular intervals between the vertical post members 415. One way to reduce thermal expansion is to design the substrate support assembly 414 using materials having a low coefficient of thermal expansion, such as tungsten, alumina or boron carbide. In another embodiment, the ring 411 may be designed to have a geometry that minimizes movement of the support fingers 412 and the vertical post members 415.

4 and 7, the lower portion of each station of each of the processing stations 402, 404 includes a plurality of interleaving wall assemblies 422, respectively. The interleaving wall assembly 422 is configured to move in interaction with the lift assembly 413 between the loading position described in position 402 of FIG. 4 and the processing position described in position 404 of FIG. 4. Interleaving wall assembly 422 generally includes upper interleaving walls 423 rigidly attached to mainframe 113 and lower interleaving walls 424 attached to lift assembly 413 and configured to move together. Lower interleaving walls 424 (especially the innermost pair of interleaving walls 424 disposed in close proximity to the cell) are fluids such as demineralized water to seal the lower portion of the processing stations 402, 404 from an environment outside the enclosed environment. Can be filled with. Demineralized water is generally supplied continuously continuously to the space between the lower interleaving walls 424, for example, via a conventional "drip" mechanism. Using the fluid sealing interleaving wall assembly 422, the processing stations 402, 404 of the present invention can form a reliable seal and also a single seal 428 for sealing while the structure is rotating and linearly moving. The need for can be eliminated. In conventional applications it is common to use a seal that acts as a rotating and linear seal disposed on a common guide axis. The interleaving wall assembly 422 allows the seal 428 described in FIG. 7 to be merely a rotary seal, not a combination of a rotary seal and a vertical sliding seal that often cannot operate reliably in fluid processing systems.

As mentioned above, each of the stations 402, 40 may include an upper catch ring 418 and a lower fluid catch ring 419 described in FIGS. 4, 5, and 7. Each catch rings 418, 419 generally include annular members extending inwardly or outwardly from the inner wall of the respective stations 402, 404. Rings 418 and 419 may be attached to the inner wall of the cells or may be integral with the inner wall of the cells. The inner end edges 421a and 421b of the catch rings 418 and 419 generally have a size with a diameter of about 5 mm to about 50 mm larger than the diameter of the substrate 401 being processed. Likewise, substrate 401 may be raised and lowered vertically through respective rings 418 and 419 during processing. Additionally, each of the catch rings 418, 419 includes fluid drains 420a, 420b, each configured to collect processing fluid on the fluid catch rings 418, 419 (FIG. 7). Fluid drains 420a and 420b are in fluid communication with drain port 314 as shown in FIG. 7. The drain port 314 is connected to a separation box 429 (FIG. 4) where gas and fluid can be separated from each other. Separation box 429 includes a gas drain port 430 disposed on an upper portion of separation box 429 and a fluid drain 431 disposed on a lower portion of separation box 429. Separation box 429 is a reclamation device (not shown) for collecting and reusing process fluids collected at fluid drain 420a of catch ring 418 or fluid drain 420b of carry ring 419. It further includes a recapture port 432 configured to forward to.

Referring to FIG. 7, the catch rings 418, 419 are configured to perform fluid processing of the substrate 401 at multiple vertical positions within each station of the processing stations 402, 404. For example, in one direction, the substrate 401 may be installed such that the top surface of the substrate 401 is disposed directly above the end edge 421a of the upper catch ring 418 during the first fluid processing step. In this configuration, the first processing fluid is transferred by the dispensing arms 406 and 408 while the substrate support assembly 414 and the substrate 401 are rotated at a speed of about 5 rpm to about 120 rpm using the support motor 443. 401 may be distributed. Rotation of the substrate 401 allows fluid dispensed on the substrate to flow radially out of the substrate. Fluid flow on the edge of the substrate travels outward and downward and is received on the upper catch ring 418. The fluid can be captured by the fluid drain 420a and sent to the recapture port 432 or recycled for further processing as needed. Once the first fluid treatment step has been completed, the substrate 401 has a second processing position where the top surface of the substrate 401 is disposed directly above the end end 421b of the lower fluid catch ring 419 during the second fluid processing step. Can be moved vertically. The substrate 401 is processed in this configuration in a similar manner to the first fluid treatment step, and the fluid used in the process can be collected by the fluid drain 420b. The advantage of this configuration is that multiple fluid treatment chemicals can be used in a single treatment station. Additionally, the fluid treatment compounds are compatible or compatible because the individual fluid catch rings 418, 419, each having independent fluid drains 420a, 420b, can individually collect incompatible process fluids. You can't.

8A illustrates a cross-sectional view of an example fluid processing chamber 800 that may be adapted to perform various aspects of the present invention. The fluid processing chamber 800 may be located at one of the processing cell points 102, 104, 106, 108, 110, 112, 114, 116 shown in FIG. 1. Alternatively, the fluid processing chamber 800 may be implemented as a separate plating cell or in combination with another substrate processing platform. Fluid treatment chamber 800 may generally include a treatment region 28 that includes a top (optional, not shown), sidewall 10, and base 27. A bowl 4 having an opening 4A in the center of the circular side wall and the bottom is generally disposed at the central position of the base 27. Spindle 13 is disposed in the opening of bowl 4. A plurality of substrate supporting fingers 18 are coupled to the spindle 13 located inside the opening 4A of the bowl 4. The substrate support finger 18 is configured to hold the substrate by using friction and / or "chucking" the substrate W, or by supplying a vacuum to the substrate backside W2 of the substrate W. do. Spindle 13 and substrate support finger 18 may be elevated relative to bowl 4 using linear slide 30. In the processing position, as shown in FIG. 8A, the substrate W held by the substrate support finger 18 is positioned using a linear slide 30 to allow the upper side wall 4D of the bowl 4 and the substrate W to be positioned. An adjustable gap 33 is formed between the substrate backside W2 of the substrate. The gap 33 is generally adjusted to limit and control the flow rate of the temperature controlled fluid from the fluid volume 25 formed between the substrate backside W2 and the bowl 4. Fluid source 3 delivers temperature controlled fluid to fluid volume 25.

In one embodiment, the edge partition 1 is radially located outside of the periphery of the substrate W. The edge bulkhead is generally a continuous enclosing substrate W that can be attached to a vertical lift assembly 2 capable of vertically elevating the edge bulkhead 1 or directly attached to the sidewall 10 (shown in FIG. 8B). Circular ring. The edge partition 1 is generally configured to retain the amount of fluid transferred from the fluid distribution port 26 onto the processing surface W1 of the substrate W. As shown in FIG. In one aspect, the processing surface W1 of the substrate W and the inner wall 1A of the edge partition wall 1 form a fluid volume region 29 in which fluid retained on the processing surface W1 is collected. . In one aspect, the edge partition wall 1 is configured such that the gap 32 has an inner diameter larger than the outer diameter of the substrate W such that the gap 32 is formed between the periphery of the substrate W and the inner wall of the edge partition wall 1. do. The gap 32 is generally the amount of fluid flowing through the gap 32 due to the size and surface tension formed between the fluid held within the substrate W, the edge partition 1 and the fluid volume region 29. To minimize the size.

In one aspect the edge partition 1 allows fluid to be collected on the processing surface W1 of the substrate, prevents the fluid from contaminating the substrate backside W2 of the substrate W, and the fluid volume region. It is used to limit the consumption of the treatment solution dispensed to (29). In one aspect, the gap 32 may be between about 0.5 mm and about 2 mm.

In one embodiment, the edge bulkhead 1 can be elevated by a vertical lifting assembly 2 which is adapted to position the edge bulkhead 1 in two or more vertical positions. The vertical lift assembly 2 may be a conventional pneumatic actuator or a DC servo motor attached to a lead screw (not shown). In one aspect, the elevating of the edge bulkhead 1 can be used to adjust the amount of processing fluid retained in the fluid volume region 29, and thus the amount of fluid remaining on the processing surface W1 of the substrate W. . In another aspect, the edge partition wall 1 is lowered to a predetermined position such that an upper portion of the edge partition wall 1 is lower than the substrate W, or a predetermined position such that the lower portion of the edge partition wall 1 is higher than the substrate W. The fluid retained in the substrate W can flow radially outside and away from the surface of the substrate W due to gravity or centrifugal forces generated by rotating the substrate. Other processes, such as a rinsing process and a drying process, can also be performed when the edge bulkhead 1 is elevated.

8C and 8D show one embodiment of an edge partition 1 having an elongated portion 1C located below the substrate W. FIGS. In one aspect, the elongated portion 1C extends inwardly from the inner wall 1A of the edge partition 1, thus providing the edge partition 1 with an "L" shaped cross section. The stretched portion 1C is generally configured to have an inner diameter smaller than the outer diameter of the substrate W. In one aspect, as shown in FIG. 8C, the edge partition 1 is arranged to form a gap that limits the flow rate of the fluid retained in the fluid volume region 29 during processing.

In one aspect, as shown in FIG. 8D, the partition wall is sufficiently raised so that the elongated portion 1c of the edge partition wall 1 is in contact with the surface of the substrate W and is a static " pool of fluid discharged. ) &Quot; can be formed on the substrate W (FIG. 8D). In another aspect, the elongated portion 1C may be used to elevate the substrate W from the substrate support finger 18 so that the substrate backside W2 is temperature controlled with the fluid volume 25 contained therein. The substrate W can be processed without being heated by the fluid. In another aspect, the edge bulkhead 1 can be lowered to a certain position using the vertical elevating assembly 2 such that the upper portion of the partition wall is lower than the substrate W, so that the processing fluid retained in the substrate Due to gravity or rotation, it may flow radially outside of the substrate W and away from the substrate. Other processes such as a rinsing process and a drying process can also be performed when the edge partition wall 1 is lowered.

Referring to FIG. 8A, generally three or more substrate supporting fingers 18 may be radially attached to the top of the spindle 13 to support the substrate thereon. In one aspect, the three substrate supporting fingers 18 are evenly arranged in the radial direction-that is, the angle between the fingers is spaced 120 degrees apart. The substrate support finger 18 generally has a central channel 17 in fluid communication with a spindle port 13A formed in the spindle 13. In one aspect, the spindle port 13A and the central channel 17 are in fluid communication with a vacuum source 15, such as a venturi. In this structure, a seal on the substrate support finger 18 by creating a pressure drop between the atmospheric pressure above the substrate processing surface W1 and the vacuum generated by the vacuum source 15 in the central channel 17; 16) (eg, O-ring 16A, elastic diaphragm 16B). The use of a vacuum to hold the substrate is such that the substrate W and the substrate support finger 18 are being rotated by the substrate support finger motor 20 and / or are moved vertically by the substrate support lift assembly 50. The substrate can then be used to prevent slip off from the substrate support finger 18.

8E is a more detailed view of the tip of the substrate support finger 18 with an O-ring 16A positioned thereon to support the substrate W. As shown in FIG. The shape and material hardness of the O-ring 16A can be optimized for each substrate support finger 18 to compensate for the flatness problems and surface irregularities often found on semiconductor wafers. Soft elastic seals, which have a large cross-sectional area and are made of "non-slip" materials (eg, Viton ^™ , buna-N, etc.), are the preferred choice for the O-ring 16A. In this structure, the seal 16A serves as the main seal when a vacuum is applied by the vacuum source 15 to grip the substrate W on the finger 18. O-ring 16A also prevents leakage of fluid retained in fluid volume 25 into central channel 17.

8F shows another embodiment of a substrate support finger 18 having a substrate held in the elastic diaphragm 16B. In this structure, the elastic diaphragm 16B is positioned at each substrate support finger 18 to provide a rigid seal against the fluid relative to the end of the substrate support finger 18 so that the fluid is attached to the vacuum source 15. To prevent passage. The elastic diaphragm 16B holds the substrate located thereon using a sub atmospheric pressure or vacuum generated in the region 16F formed between the substrate back surface W2 and the upper surface 16C of the elastic diaphragm 16B. Is adapted to. The sub atmospheric pressure or vacuum is formed when the elastic diaphragm 16B is displaced (eg, stretched or distorted) by the generation of the sub atmospheric pressure below the backside 16D of the elastic diaphragm 16B using the vacuum source 15. . The displacement of the elastic diaphragm 16B causes a "vacuum" to be formed between the sealing portion formed between the contact points 16E on the upper surface 16C of the elastic diaphragm 16B and the substrate back surface W2. In general, the elastic diaphragm 16B is preferably made of a soft, non-slip material such as Viton ^™ , buna-N.

Referring to FIG. 8A, the fluid processing chamber 800 further includes a substrate support finger motor 20 coupled to the spindle 13, generally to rotate and support the substrate support finger 18 and the spindle 13. It is composed. A rotary seal assembly 14 can be positioned to provide a rotary seal between the spindle 13 and the vacuum source 15. Rotational movement is transmitted from the motor 20 to the substrate W via the spindle 13 and the substrate supporting finger 18. The rotational speed of the substrate support finger and the spindle 13 may vary depending on the particular treatment to be performed, such as deposition, rinsing and drying. In the case of deposition, the substrate support fingers can be adapted to rotate at a relatively low speed, such as between about 5 rpm and about 150 rpm, depending on the speed of the processing fluid. During the rinsing process, the substrate support fingers 18 can be adapted to spin at relatively moderate speeds, such as between about 5 rpm and about 1000 rpm. In the case of drying, the substrate support finger can be adapted to spin at a relatively high speed, such as between about 500 rpm and about 3000 rpm, for rotationally drying the substrate W positioned thereon.

The substrate support finger motor 20 may be connected to a substrate support lift assembly 50 which generally includes a linear slide 30 coupled to the lead screw 31 and the substrate support lift motor 19. In one embodiment, the substrate support lift motor 19 is a precision motor that transmits rotational movement to the lead screw 31. The rotational movement of the lead screw 31 is converted to the linear movement of the linear slide 30 which changes the movement of the spindle 13 to another form.

Referring to FIG. 8A, the bowl 4 may be mounted to a base 27 having multiple bolt assemblies 12. The shape of the bowl 4 forms a fluid volume 25 in fluid communication with the fluid source 3 through at least one inlet 4B at the bottom of the bowl 4. Fluid source 3 may be adapted to deliver a fluid, such as heated DI water. In one aspect the fluid source 3 is adapted to allow fluid to flow through one or more inlets 4B, then through the fluid volume 25, and then over the side wall top 4D of the bowl 4. In one aspect, the substrate W is between the substrate backside W2 and the sidewall top 4D of the bowl 4 to ensure contact between the substrate backside W2 and the fluid being delivered or flowing from the fluid source 3. Is positioned to form a gap 33. The size of the gap 33 is configured to allow fluid to flow over the sidewall top 4D and to ensure fluid contact with the substrate backside W2. In one aspect, the bowl 4 is configured to produce and maintain fluid at a uniform temperature within the fluid volume 25, especially near the substrate backside W2. Generally, this is done by optimizing the size and shape of the fluid volume 25 and / or by positioning one or more infusions away from the substrate backside W2. The optimum size of the fluid volume 25 to obtain a uniform substrate temperature is in the form of fluid delivered to the fluid volume 25, the flow rate of the fluid through the fluid volume 25, the set point temperature of the fluid, the substrate support finger ( 18), and the rotational speed of the substrate support finger 18. Since laminar flow schemes have been known to exhibit poor heat transfer characteristics, the rotation of the substrate support fingers 18 can also be adapted to maintain a very coarse flow in the fluid volume 25. In one aspect, the fluid delivered to the fluid volume 25 is temperature controlled using the fluid heater 41. The fluid heater 41 may include an in-line fluid heater 42 attached to the fluid source 3 and / or a heating element 43 attached or inserted into the bowl 4.

In one aspect, the flow from the fluid source 3 and through the gap 33 to the outside of the fluid causes the processing fluid flow from the fluid volume region 29 to be undesirably in contact with the backside of the substrate W. It is designed to prevent or minimize. Preventing contact between the backside of the substrate W and the processing fluid will prevent deposition on the backside of the substrate where particles or unwanted materials can affect semiconductor device yield.

In one embodiment, the gap 5 can be configured between the spindle 13 and the opening 4A of the bowl 4 to enable rotational movement of the spindle 13 relative to the bowl 4. The gap 5 may be between about 0.12 mm and about 0.5 mm wide. However, larger or smaller gaps may be used. The catch member 9 with the opening 9A is arranged below the bowl 4 or around the spindle 13. Inside the capture member 9, a labyrinth seal is formed between the shield 7 and the capture member 9. Maze seals are generally a group of overlapping features (i.e. elements 7 and 9 in FIG. 8A) that, due to the geometry and configuration of the overlapping feature, prevent fluid from making its passage through the seal. Is defined. The fluid flow through the gap 5 is collected by the capture member 9 in the collection region 8 and then sent to a drain 6 located near the bottom of the capture member 9. Alternatively, the seal can be used between the spindle 13 and the opening 4A of the bowl 4, thus eliminating the need for a maze seal.

The edge bulkhead 1, the bowl 4, the substrate support fingers 18, and the spindle 13 are ceramic materials (such as fully press-molded aluminum nitride, alumina Al ₂ O ₃ , silicon carbide (SiC)), It may be made from polymer coated metals (such as Teflon ^™ polymer coated aluminum or stainless steel), polymeric materials, or other materials suitable for semiconductor fluid processing. Preferred polymer coatings or polymeric materials include Tefzel (ETFE), Halar (ECTFE), perfluoroalkoxy resin (PFA) polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoropropylene (FEP), PVDF and the like. Same fluorinated polymer.

The fluid processing chamber 800 further includes a perforated plate 11 positioned over the base 27 and between the outer wall 4E of the bowl 4 and the interior of the side wall 10. The side wall 4E, the base 27, the side wall 10, and the perforated plate 11 of the bowl 4 form a compartment 34. The compartment 34 is in fluid communication with the treatment area 28 through a plurality of holes 11A in the perforated plate 11. Drain port 24 is generally located in base 27 and is connected to drain port 21, which may be connected to conventional scrubbed drain system 23 and fluid drain 922.

In one aspect, the amount of oxygen or other gas in the treatment region 28 during the deposition process may be a treatment gas, such as nitrogen, helium, hydrogen, argon, and / or mixtures thereof or other gases commonly used in semiconductor processing. Controlled by passing. The process gas is introduced into the treatment region 28 through a HEPA-type filtration system (see element 313 in FIG. 2) and removed from the discharge port 21. The presence of the perforated plate 11 through which the plurality of holes 11A are formed improves the uniformity of the processing gas flow through the processing region 28.

The fluid processing chamber 800 further includes a fluid dispensing port 26 configured to be positioned on the substrate support finger 18 while dispensing the processing fluid on the substrate W. As shown in FIG. A fluid dispensing port 26 similar to the fluid injection system 1200 (to be described later in FIGS. 9, 9A, 9B, etc.) is generally at least one via at least one fluid supply valve (eg, valve 1209 shown in FIG. 9). In fluid communication with a fluid supply source (eg, solution source 1202, 1204, 1206 shown in FIG. 9). As such, multiple chemicals are mixed and supplied from the fluid distribution port 26 to perform the various electroless plating processes described below.

System behavior

In operation, the system 100 of the present invention may be used for electroless preclean treatment, electroless activation treatment, electroless plating iron, electroless postclean, and / or other electroless treatment. It can be used to perform processing steps. Exemplary processing sequences for carrying out the electroless plating treatment using embodiments of the present invention will now be described with reference to the embodiments of the present invention discussed herein. The electroless plating process generally begins with the insertion of the substrate into the enclosed process enclosure 302 (see FIG. 2). The insertion generally involves opening the valved connection port 304 and inserting the substrate 401 into the processing enclosure 302 into the mainframe robot 120. The substrate 401 is inserted face up; That is, the surface of the substrate 401 to be plated faces upward.

Once the substrate is inserted into the enclosed processing enclosure 302, the mainframe robot 120 positions the substrate with the support fingers 412 in the processing station 404, and the mainframe robot contracts from the processing enclosure 302. . The support finger 412 then positions the substrate 401 vertically for processing, while the valved connection port 304 is closed. During the insertion process, that is, during the time period during which the valved connection port 304 is open, the gas supply at the environmental control assembly 315 is in an "on" state such that the enclosed process enclosure 302 is replaced with an inert process gas. Filled up. A process for introducing an inert gas into the processing volume has a connection port configured to prevent entry of ambient gases, especially oxygen, into the processing enclosure 302, since it has an adverse effect (oxidation) on the oxygen plated material, especially copper. Flows out of the process gas through 304; The flow of process gas continues after the valved connection port 304 is closed and is generally turned on before the valved connection port 304 is opened. The flow of process gas continues during the electroless cleaning, activation, and plating sequence, and once the valved connection port 304 is closed, the discharge port 314, gas apertures, and / or vacuum pumps maintain the desired process pressure. To be used. A combination of gas supply, HEPA filter, and outlet port 314 is used to control the oxygen content in the enclosed processing enclosure 302 during the particular processing step; That is, the oxygen content in the treatment enclosure 302 can be controlled and optimized for individual treatment steps if desired.

Once the substrate is placed in the processing cell, the electroless plating process of the present invention generally begins with a substrate preclean process. The preclean process begins with the upper surface of the substrate being weakly positioned generally between about 2 mm and about 10 mm above the end edge 421a of the upper catch ring 418. The cleaning process is through the cleaning solution being dispensed by the dispensing arm 406 to the substrate surface. The cleaning solution is dispensed to the substrate surface during the lowering process to save processing time and increase the throughput of the cell. The cleaning solution can be an acidic or basic solution depending on the desired cleaning properties, and the temperature of the cleaning solution can be controlled (heated or cooled) depending on the treatment method. The cleaning solution may also contain a surfactant additive. Generally, rotation of the substrate between about 10 rpm and about 60 rpm causes the cleaning solution to flow radially out of the substrate and above the upper catch ring 418, where the cleaning solution is captured and delivered to the drain 420a, If desired, it is then passed to the separation box 429 through the discharge port 314 for separation and recirculation.

Once the substrate has been cleaned, the substrate surface is generally rinsed. The rinse treatment involves dispensing a rinse solution, such as deionized water, onto the substrate surface while rotating the substrate. The rinse solution is dispensed at a flow rate and temperature configured to effectively remove any residual cleaning fluid from the substrate surface. The substrate is rotated at a speed sufficient to drive the rinse solution out of the surface of the substrate, ie, between about 5 rpm and about 120 rpm.

Once the substrate has been rinsed, a second rinsing step may be employed. More specifically, the substrate surface may first be treated with an acidic conditioning rinse solution prior to the activation step, which generally involves the addition of an acidic activation solution to the substrate surface. Conditioning rinse solutions generally include an acid, such as an acid used in the activation solution, which serves to condition the substrate surface for the addition of an acidic activation solution. Exemplary acids that can be used as conditioning solutions include nitric acid, chloride based acids, methyl sulfonic acid, and other acids commonly used in electroless activating solutions. Depending on the compatibility with the chemistry used for the pre-cleaning process of the chemistry used for the conditioning process, the substrate conditioning process may be performed at a processing position adjacent to the upper catch ring 418, or the substrate may be Can be lowered to a processing position adjacent to 419).

Once the substrate is conditioned, the activation solution is added to the substrate surface with the substrate positioned near the lower catch ring 419. The activating solution is generally used to act as a catalyst layer for subsequent deposition treatment and / or to promote adhesion between the substrate surface and later deposited layers. The activating solution is distributed by the arm 408 on the substrate surface and flows radially outwards and above the catch ring 419 relative to the edge of the substrate as a result of the substrate rotating. The activating solution is then collected by the fluid drain 420 for recycling. Activation solutions generally include solutions of palladium substrates having an acid foundation. During the activation step, the backside substrate surface, which is generally circular and similar in diameter to the fluid diffusion member 405, is generally located between about 0.5 mm and about 10 mm from the top surface of the fluid diffusion member 405. The separation between the backside of the substrate and the fluid diffusion member 405 is filled with a temperature controlled fluid, which may be deionized water dispensed from the holes 407 formed in the fluid diffusion member 405.

A temperature controlled fluid (typically a heated or cooled fluid) exiting the holes 407 contacts the backside of the substrate and transfers heat from the fluid to the substrate to heat / cool the substrate for processing or Transfer heat from the substrate to the fluid. The temperature control fluid may be continuously supplied or the fluid supply may be stopped after a predetermined volume of fluid is supplied. The flow of temperature controlled fluid in contact with the backside of the substrate is controlled to maintain the substrate temperature constant during the activation process. In addition, the substrate may be rotated between about 10 rpm and about 100 rpm during the activation process to facilitate uniform heating / cooling and fluid spreading.

Once the substrate surface is activated, additional rinsing and / or cleaning solution can be applied to the substrate surface to clean the activation solution from the substrate. The rinsing and / or cleaning solution used after activation preferably comprises another acid, selected to match the acid of the activation solution. After acid post rinsing, the substrate may also be cleaned with a neutral solution such as deionized water to remove residual acid into the substrate. The post activation cleaning and rinsing step may be performed in the upper or lower treatment position, depending on the compatibility of the chemical properties.

When the activation step is complete, the substrate is transferred by a substrate transfer shuttle 305 from the electroless activation station 402 to the deposition station 404. The transfer process raises the substrate from the electroless activation station 402 with the support finger 412, moves the substrate transfer shuttle 305 under the substrate, lowers the substrate onto the substrate transfer shuttle 305, and lowers the substrate. Moving from the electroless activation station 402 to the deposition station 404. Once the substrate is placed in the deposition station 404, a substrate support finger 412 for the deposition station 404 removes the substrate from the substrate transfer shuttle 305 and positions the substrate for processing.

Positioning the substrate generally involves positioning the substrate adjacent the upper catch ring 418 for a preclean process. The preclean process discharges the preclean solution to the arm 408 on the substrate, where the preclean solution is generally selected to have a pH similar to that of the electroless plating solution that is subsequently applied to the preclean solution. The substrate surface is conditioned to the pH of the deposition solution. The preclean solution may be the same basic solution as the foundation for the electroless deposition solution provided after the conditioning step. Precleaning the substrate surface with a solution having a pH similar to the plating solution also enhances the substrate wettability for the deposition process. The pre-clean solution may be cooled or heated, as required by the treatment method.

When the substrate surface is adjusted to a basic solution, the next step in the electroless deposition process is to add a plating solution to the substrate surface. Plating solutions generally include metals such as cobalt, tungsten, and / or phosphorous that are deposited on the substrate surface in the form of alloys of pure metal or several metals. The plating solution is generally a pH phase base and may include a surfactant and / or a reductant to facilitate the electroless plating process. The substrate is generally lowered to a position just above the lower fluid catch ring 419 for deposition stage RP. The deposition solution applied by the arm 408 thus flows out over the substrate edge and is received by the catch ring 419 where it is collected by the drain 420b for recycling. The substrate backside is also generally located between about 0.5 mm and about 10 mm away from the top surface of the fluid diffusion member 405 during the deposition step, or between about 1 mm and about 5 mm. The space between the substrate backside and the fluid diffusion member 405 is filled with a temperature controlled (generally heated) fluid, which may be deionized water discharged through the holes 407 formed into the fluid diffusion member 405. . The temperature controlled fluid dispensed from the holes 407 contacts the backside of the substrate and transfers heat from the fluid to the substrate to heat the substrate during the deposition process. The temperature control fluid is generally supplied continuously throughout the deposition process. The flow of temperature control fluid in contact with the backside of the substrate during the deposition process is controlled such that a constant substrate temperature is maintained during the deposition process. In addition, the substrate may be rotated between about 10 rpm and about 100 rpm during the deposition process to facilitate uniform heating and fluid spreading of the deposition solution applied to the substrate surface.

Once the deposition process is complete, the substrate surface is generally cleaned in a post deposition cleaning process that applies a post deposition cleaning solution to the substrate. The post deposition process can be performed at the upper or lower processing position, depending on the compatibility of the processing chemistry. Post deposition cleaning solutions generally include a base solution having a pH that is approximately similar to the plating solution. The substrate is rotated during the cleaning process to remove the cleaning solution from the substrate surface. Once the cleaning process is complete, the substrate surface is cleaned and spin-dried, for example, with deionized water, to remove residual chemicals from the substrate surface. As an alternative, the substrate may be vapor dried by adding a solvent having a high vapor pressure, such as acetone, alcohol or the like.

In the exemplary system 100 of the present invention, the processing cell points 102 and 112 are configured to perform electroless preclean treatment, electroless activation treatment, electroless post activation cleaning treatment, 110 is configured as an electroless deposition cell and an electroless post deposition cleaning cell. In this configuration, because each activation and deposition chemical is separated at each treatment site, chemical recycling from each treatment is possible. Another advantage of this configuration is that the substrate is transferred from the activation solution to the electroless deposition solution in an inert atmosphere because the processing space for the fluid treatment cell points 102, 104, 110, 112 is placed in a closed processing enclosure 302. Is that. In addition, the processing enclosure is filled with an inert gas during loading and processing, wherein the percentage of oxygen within the processing enclosure 302 has been substantially reduced, for example less than about 100 ppm oxygen, in particular less than about 50 ppm oxygen, or in particular, about Has less than 10 ppm oxygen. The combination of substantially reduced oxygen content and proximity and rapid transfer between the activation and plating cells (typically less than about 10 seconds) prevents the substrate surface from oxidizing between the activation and deposition steps, which benefits from conventional radio It was a challenge that the solution had to solve.

Through the fluid processing steps of the present invention, the substrate position can be changed. More specifically, the vertical position of the substrate relative to the diffusion member 405 can be changed. The distance from the fluid diffusion member 405 can be increased if desired to reduce the temperature of the substrate, for example, during processing. Similarly, the proximity of the substrate to the fluid diffusion member 405 can be reduced to increase the temperature of the substrate during processing.

Another advantage of embodiments of the present invention is that system 100 can be used with compatible or incompatible chemicals. For example, in processing sequences that use incompatible chemicals, such as acidic activation solutions and basic plating solutions, acidic solutions are used exclusively in other cells. The cells can be placed adjacently and the substrate can be transferred between each cell by one of the shuttles 305. Substrates are generally cleaned in each cell before being transported to adjacent cells, which prevents the chemical of one cell from contaminating the other cell. Also, because each chemistry can be collected by different catch rings 418 and 419 and kept separate from each other, multiple processing locations within each processing station or cell, for example catch rings 418 and 419. Enables the use of incompatible chemicals in a single cell or station.

Embodiments of the invention may also be configured as a single use-type chemical cell. That is, a single dose of treatment chemical can be used for a single substrate and discarded without solution regeneration, ie without being used to process additional substrates. For example, system 100 may use a common cell to activate, clean, and / or post treat a substrate, and other cells may be used to perform electroless deposition and / or post-deposit clean processes. Because each of these treatments uses different chemicals, the cell is generally configured to provide the respective chemicals required for the substrate when needed and discharge the used chemicals when the treatment is terminated. However, gcells are generally not configured to recapture chemicals because significant contamination problems can occur by reacquiring different chemicals from a single cell.

A further treatment cell that may be used in an embodiment of the present invention is a U.S. Patent, assigned to the applicant and filed July 10, 2001 entitled "In-situ Electroless Copperseed Layer Improvement in Electroplating Systems". 6,258,223 and US patent application Ser. No. 10 / 036,321, filed Dec. 26, 2001, assigned to the applicant and entitled "Electroless Plating System", these two documents are consistent with the present invention. As long as it does not, it becomes a reference of this application as a whole.

Spray dispensing system

9 shows a side cross-sectional view of a face-up, fluid treatment cell 1010 similar to each of the stations 402, 404 described above. A substrate 1250 oriented face-up is shown in FIG. Although various embodiments show processing cells 1010 that make up a fully facing up process, the orientation of the substrate is not intended to limit the various embodiments of the present invention. The term “electroless treatment” (or electroless deposition treatment) may include, for example, one or more preliminary cleaning treatment steps (substrate preparation steps), electroless activation treatment steps, electroless deposition steps, post deposition cleaning and / or rinsing steps. It has the meaning including all processing steps performed to deposit an electroless deposited film on a substrate, including.

Fluid treatment cell 1010 includes a cell body 1015. The cell body 1015 may be manufactured from a fluid treatment (electroless or electrochemical plating) solution and various substances known to be inert. Such materials include plastics, polymers, and ceramics. In the arrangement of FIG. 9, the cell body 1015 forms an annular or square body that forms a sidewall with respect to the cell 1010. The cell body 1015 receives and supports a lid assembly 1033 at its upper end. The integrated bottom wall 1016 is provided with a cell body 1015 with a bottom end. Bottom wall 1016 has a hole for receiving substrate support assembly 1299. Features of the substrate support assembly 1299 are described below.

In one embodiment of the invention, substrate support assembly 1299 generally includes a base plate member 1304 and a fluid diffusion member 1302 attached thereto. The substrate support assembly 1299 shown in FIGS. 9-12 shows another embodiment of the platen assembly 403 described above. An annular seal 1121, such as an o-ring type seal, is disposed near the fluid diffusion member 1302. Circular seal 1121 is generally configured to be secured to the upper outer edge of base plate member 1304 to provide a fluid tight seal between fluid diffusion member 1302 and base plate member 1304 to facilitate fluid dispensing processing. Form a tight seal.

Base plate member 1304 generally forms a solid disk-shaped member having a fluid inlet 1308 formed through a central portion or through another location on base plate member 1304. Base plate member 1304 is preferably made from ceramic material or coated metal. Polyvinylidene fluoride (PVDF) materials may also be used. Fluid volume 1310 is formed above base plate member 1304 and below fluid diffusion member 1302. In this way, the fluid diffusion member 1302 is positioned above the base plate member 1304. Fluid volume 1310 generally has a spacing between about 2 mm and about 15 mm between fluid diffusion member 1302 and base plate member 1304, although larger or smaller spacing may also be used.

Fluid diffusion member 1302 includes a plurality of fluid passages 1306 formed therethrough, as described above in connection with FIGS. 4, 5A-5E, and 7. In use, fluid flows from the fluid inlet 1308 to the fluid volume 1310 sealed, and then through the fluid passageway 1306 formed in the fluid diffusion member 1302, the substrate backside 1250 and the fluid diffusion member. To heat transfer region 1312 between 1302. In one embodiment of the present invention, in order to be temperature, the fluid heater 1164, the temperature of the fluid entering the heat transfer region 1312 from the fluid source 1203 is the controller 111 and the temperature probe (not shown) Used with). In one embodiment of the present invention, the fluid source 1203 is adjusted to dispense DI water. If a heated fluid is present on the substrate 1250, the back side of the substrate 1250 is heated. The constant high substrate temperature facilitates electroless plating operation. A number of heating coils 1112 may optionally be embedded in the base plate member 1304 and, if desired, the deionized water (DI water) temperature flowing into the heat transfer region 1312 and thus the substrate temperature during processing. Can be individually controlled to precisely control. In particular, individually controlling the heating coils 1112 makes it possible to precisely control the entire substrate surface, which is important in electroless plating processes.

Referring to FIG. 9B, as an alternative to the heating arrangement described above, the optional heating coil 1112 may be removed from the base plate member 1304 and installed in the fluid diffusion member 1302. To accommodate this redesign, the geometry of the fluid diffusion member 1302 is increased while the base plate member 1304 is thin. As the deionized water flows through the fluid inlet 1308, the deionized water passes under the heated fluid diffusion member 1302, through the fluid passage 1306, and then back to the substrate 1250 and the fluid diffusion member 1302. It passes through the heat transfer region 1312 between. In this arrangement, the separated fluid heater 1164 is selectively removed. The fluid passage 1306 may be configured to allow deionized water to flow opposite the backside of the substrate 1250. The flow of deionized water on the backside of the substrate 1250 not only heats the substrate 1250, but also prevents the electrolytic fluid from contacting the backside of the substrate 1250 undesirably.

Base plate member 1304 and fluid diffusion member 1302 may be formed of a ceramic material (e.g., fully pressed aluminum nitride, alumina (Al ₂ O ₃ ), silicon carbide (SiC), polymer coated metal (Teflon) ™ polymer coated aluminum or stainless steel, etc.), polymeric materials, or other materials suitable for semiconductor fluid processing, Preferred polymeric coatings or polymeric materials include Tefzel (ETFE), Halar (ECTFE), perfluoroalkoxy ( fluorinated polymers such as perfluoroalkoxy resin (PFA), polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoropropylene (FEP), PVDF and the like.

The plurality of substrate supporting fingers 1300 is generally located adjacent the perimeter of the fluid diffusion member 1302. The substrate support finger 1300 is configured to support the substrate 1250 a predetermined distance above the fluid diffusion member 1302 to form the heat transfer region 1312. A robot blade (not shown) may be inserted under the substrate 1250 and into the substrate support fingers 1300 to lift and remove the substrate 1250 in substrate removal and / or insertion processing. As an alternative configuration, instead of the substrate support finger 1300 a continuous ring (not shown) may also be used to lift the substrate from the continuous ring. In this manner, the robot blade can be accessed under the substrate 1250 again to be transported in and out of the cell 1010. Fluid treatment cell 1010 also includes a slot 1108. Slots define holes formed through sidewalls 1015 to provide access to robots (not shown) for dispensing and withdrawing substrates into and out of cell 1010.

In the configuration of the cell 1010 of FIG. 9, the substrate support assembly 1299 optionally reciprocates axially with the upper bearing 1054A and the lower bearing 1054B and rotates around the base plate support 1301. Can be. To this end, a substrate lift assembly 1060 is first provided. The substrate lift assembly 1060 includes a substrate support assembly motor 1062. In one embodiment of the invention, the substrate support assembly motor 1062 is a precision motor that rotates a lead screw 1061. The rotational movement of the support assembly motor 1062 is transformed into the linear movement of the pinker slide 1064. The pinker slide 1064 slides up and down along the grooved housing 10665. In this case, the support assembly motor 1062 is preferably electrically driven. Alternatively, the substrate support assembly motor 1062 may be an aerodynamically driven air cylinder.

The substrate lift assembly 1060 also includes a substrate support finger motor 1052. The finger motor 1052 rotates the substrate supporting finger 1300 and the supported substrate 1250. The substrate support finger 1300 rotates about an axis formed by the non-rotating base plate support 1301. The rotational speed of the substrate support finger 1300 varies depending on the specific treatment (eg, deposition, rinsing, drying) performed. In the case of deposition, the substrate support member is adjusted to rotate at a relatively low speed, such as between about 5 rpm and about 150 rpm, to spread the fluid throughout the substrate surface 1250 by fluid inertia depending on the viscosity of the fluid. . In the case of rinsing, the substrate support finger 1300 may be adjusted to rotate at a relatively medium speed, such as between about 5 rpm and about 1000 rpm. In the case of drying, the substrate support may be adjusted to rotate at a relatively high speed, such as between about 500 rpm and about 3000 rpm.

The base plate support 1301 is mounted to the chamber base or platform 1012 through the base member 1013 1014. In a preferred embodiment of the present invention, the base plate member 1304 does not reciprocate by the substrate lift assembly 1060 and functions as a guide for the substrate support finger 1300. Upper bearing 1054A and lower bearing 1054B are provided to enable this support. Base plate support 1301 also serves as a fluid inlet 1308 supplied by a conduit and tube 1166 for electrical wiring (not shown). Wiring and tubing pass through the base plate conduit 1305 of the base member 1014.

FIG. 9A is a side cross-sectional view directed upward of the electroless process chamber of FIG. 9. In this figure, the substrate lift assembly 1060 is in an elevated position. Since the substrate is not heated by the fluid in contact with the fluid volume 1310 and the base plate member 1304, the substrate 1250 is raised from the surface of the base plate member 1304 to allow the ambient temperature of the fluid treatment cell 1010 to rise. Enable to be processed in. This is also where the substrate 1250 is typically placed before the robot enters to pick up the processed substrate 1250.

Fluid treatment cell 1010 also includes a fluid inlet system 1200. The fluid inlet system 1200 operates to distribute various processing fluids (eg, solution source 1202, solution source 1204, and solution source 1206, etc.) to the receiving surface of the substrate 1250. The number of process fluids that may be used in the fluid treatment cell 1010 may vary depending on the application, and may be three or more as shown in FIG. 9. Metering pumps 1208 are provided in connection with each solution source 1202, 1204, 1206. In addition, a dispensing valve 1209 is provided to control dispensing each solution source 1202, 1204, 1206 to each foreline. Process fluid from solution sources 1202, 1204, 1206 is selectively introduced from tubing 1210 through inlet tubing 1225 into cell 1010. As generally shown in FIG. 9, dispense valve 1209 may be configured to clean tubing 1210 after chemical has been dispensed upstream of dispense valve 1209 from the processing fluid source. In one embodiment of the invention, residual fluid may be removed from inlet tubing 1225 by injecting gas from gas source 1207 connected to inlet tubing 1225.

Filter 1162 may be selectively coupled to fluid inlet system 1200 to prevent particles generated upstream from filter 1162 contaminate fluid processing cell 1010 and ultimately substrate 1250. If the inlet tubing 1225 needs to be rinsed before removing the substrate or between processing steps, the surface area of the filter membrane is large, so the time taken to clean the line by the addition of a filter is quite significant. May be increased and thus not used.

In another embodiment of the present invention, the heater 1161 may be coupled to the fluid inlet system 1200 before the fluid enters the treatment region 1025 to heat the fluid. The heater 1161 contemplated by the present invention may be any type of device for supplying energy to the processing fluid. Preferably, the heater 1161 is a resistive heater in the form of a jacketed type (e.g., the heater is a wall of the inlet tubing) rather than an immersion type heater (e.g., the heater element touches the solution). Heating the fluid through). The heater 1161 used with the controller 111 may be used to ensure that the temperature of the processing fluid entering the processing region 1025 of the fluid processing cell 1010 is the desired temperature.

In another embodiment of the present invention, heater 1161 is a microwave power source and flows through a microwave cavity used to rapidly energize the processing fluid. In one embodiment of the invention, the microwave power source operates at 2.54 GHz with a power of about 500W to about 2000W. In one embodiment of an in-line microwave cavity heater, the heater is immediately and optimally leveled with various solutions (eg, cleaning chemicals, cleaning solutions, and post cleaning solutions) before entering the treatment cell. Raise it up. In one embodiment of the invention, two or more separate microwave heaters may be used to selectively heat the separated fluids dispensed in separate fluid lines coming from the fluid inlet system 1200. Thus, in use, different fluids dispensed from the respective solution sources 1202, 1204, 1206 may be dispensed at different temperatures to the substrate surface.

In one embodiment of the invention, prior to entering the treatment region 1025, a fluid degassing unit 1170 may be coupled to the fluid inlet system 1200 to remove gases trapped or costly in the treatment fluid. Can be. The use of fluid evacuation units is an inherent cost in the process fluid because undissolved oxygen tends to interfere with the electroless deposition reaction, oxidize exposed metal surfaces, and affect the etch rate during the electroless cleaning process. It may help to reduce corrosion and / or process variability caused by oxygen. The fluid evacuation unit can be any unit that can generally extract the undissolved gas from the solution, for example using a gas permeable membrane and a vacuum source. Fluid exhaust units are commercially available from, for example, Mykrolis Corporation of Billarica, Massachusetts.

As shown in FIGS. 9, 9A, and 9B, in one embodiment of the fluid treatment cell 1010, the fluid inlet system 1200 may direct process fluid through the one or more spray nozzles 1402 of the substrate 1250. Adjusted to distribute to the surface. More specifically, processing fluids from solution sources 1202, 1204, 1206 are selectively dispensed to the receiving surface of substrate 1250 via fluid distribution arm 1406. A number of nozzles 1402 are formed along the fluid distribution arm 1406. The nozzle 1402 receives fluid from the inlet tubing 1225 and directs the processing fluid to the receiving surface of the substrate 1250. The nozzle 1402 may be disposed at the distal end of the dispensing arm 1406 or along the length of the fluid dispensing arm 1406. In the arrangements of Figs. 9, 9A and 9B, a pair of nozzles 1402 are disposed spaced apart from each other by the same distance. In one embodiment of the invention, one or more fluid inlet systems 1200 and / or nozzles 1402 are connected to the dispensing arm 406 and / or the dispensing arm 408 shown in FIGS. 3 and 4.

In the configuration of FIG. 9, the fluid delivery arm 1406 has a length that allows the distal end to extend above the center of the substrate 1250. At least one of the nozzles 1402 is preferably located at the distal end of the fluid delivery arm 1406. In addition, the fluid delivery arm 1406 is preferably movable relative to the distribution arm motor 1404 that is adapted to pivot the fluid delivery arm 1406 from and to the center of the substrate 1250. 9, 9A and 9B, the fluid delivery arm 1406 is pivoted in response to the movement of the distribution arm motor 1404. In FIG. Dispensing arm motor 1404 is preferably disposed behind guard member 1410 that partially isolates dispensing arm motor 1404 from chamber processing region 1025.

In one embodiment, the fluid delivery arm 1406 is adapted not only to pivot but also to move axially (FIG. 9). 9B illustrates a cross-sectional view of the face-up electroless treatment chamber of FIG. 9 in an alternative embodiment. Here, the fluid delivery arm 1406 is connected to an axial motor 1080 (eg, a linear motor). Movement of the fluid delivery arm 1406 in the axial direction allows the fluid delivery arm 1406 to be selectively positioned closer to the substrate 1250 when desired.

10 shows a top view of the electroless treatment chamber of FIG. 9. Here, the fluid transfer arm 1406 of the fluid inlet system 1200 is shown with respect to the mounted substrate 1250. Four exemplary support fingers 1300 shown support the substrate 1250. Fluid delivery arm 1406 is rotated away from substrate 1250 in this figure. This position allows the substrate 1250 to be lifted using the lift fingers 1300 by the use of the substrate lift assembly 1060 described above. However, arrow 1004 represents a rotational movement path for fluid delivery arm 1406, which demonstrates that fluid delivery arm 1406 can rotate nozzles 1402 over substrate 1250 during processing. . In one embodiment, the rotational movement and / or vertical movement of the fluid delivery arm 1406 terminates during the process of dispensing the processing fluids on the substrate surface to achieve a uniform or desired distribution of the processing solution relative to the substrate surface. . Rotational movement and / or vertical movement may be terminated by the use of the distribution arm motor 1404 and the axial motor 1080. Movement of the fluid delivery arm 1406 above the substrate 1250 may help to improve the uniformity and speed of fluid coverage of the desired surface of the substrate 1250. Preferably, substrate support fingers 1330 and substrate 1250 are rotated during dispensing of fluid from nozzle 1402 to increase the fluid distribution uniformity and throughput of the system.

In another embodiment, the processing fluids are disposed on the fluid delivery arm 1406 and are delivered through one or more nozzles adjacent the axis of rotation relative to the substrate while a carrier gas (N ₂ or argon) is located near the outer edge of the substrate. Delivery is through nozzles disposed on the fluid delivery arm 1406. During the fluid transfer operation, the substrate is preferably rotated. Injection of carrier gas around the edge of the substrate 1250 forms a gas blanket around the processing region 1025. The gas blanket moves any residue O ₂ that may remain inside the treatment zone. One of ordinary skill in the art of electroless deposition treatment will understand that oxygen may adversely affect certain processing steps, such as chemical activation steps.

In one embodiment, the nozzles 1402 are ultrasonic spray nozzles, or “air injection nozzles”. 13 shows a cross sectional view of an air jet nozzle 1402 in one design. This is a nozzle of the internal fluid mixing type. This means that the fluids are mixed internally to form a mist of the spray or processing fluid that is completely injected. Thus, in this configuration the carrier gas contains droplets of treatment solution directed towards the substrate surface. In one embodiment, the carrier gas is an inert gas such as argon, nitrogen, or helium that is used to deliver the processing fluid injected to the substrate surface.

In the nozzle design of FIG. 13, nozzle 1402 includes a body 1426 and a tip 1424. Tip 1424 is generally about 10 μm to about 200 μm in diameter. In one embodiment, tip 1424 is a diameter of about 10 μm to about 50 μm. Fluids are delivered through the tip 1424 due to the intake generated by the venturi effect produced when high pressure gas is delivered from the nozzle gas supply 1244. In the apparatus of FIG. 13, body 1426 provides separate channels 1422, 1420 for receiving liquid and gas streams, respectively. Fluid channel 1422 and gas channel 1420 are coupled at tip 1424 to allow the two streams to mix. This may be referred to as "concentric Venturi design". In such an apparatus, the fluid dispensed from the nozzle 1402 is premixed to form a fully sprayed spray. The specific tip 1424 design of FIG. 13 forms a round spray pattern. However, it should be understood that other tip configurations may be used to form other spray patterns, such as planar or fan spray patterns.

14 provides a cross sectional view of an air jet nozzle 1402 of a different design. This is an external fluid mixing nozzle. In the nozzle design of FIG. 14, nozzle 1402 includes a body 1426 and a tip 1424. Tip 1424 is generally about 10 μm to about 200 μm in diameter, or in other embodiments, about 10 μm to 50 μm in diameter. In the apparatus of FIG. 14, body 1426 provides separate channels 1422 and 1420 for receiving separate fluid and gas streams, respectively. However, in such a device the fluid channel 1422 delivers liquid through the nozzle 1402 independent of the gas channel 1420 so that the two streams are not mixed within the body 1426 but outside the tip 1424. Are mixed. This may be referred to as a "parallel venturi design". Such a device has the advantage that the gas and liquid flow can be controlled independently, which is effective for viscous liquids and polishing suspensions. This is in contrast to the nozzle 1402 of the internal mixing type in which a change in gas flow affects the liquid flow.

In one embodiment, the use of a conventional ultrasonic nozzle, similar to the nozzles of FIGS. 13 and 14, is provided to form a sprayed mist of processing fluid directed at the receiving surface of the substrate. The direction of the mist as opposed to the liquid stream acts to preserve expensive electroless treatment fluids. This also provides more uniform coverage for the receiving surface. In addition, the fluid dynamic boundary layer produced when the substrate 1250 is rotated by the use of the substrate supporting finger motor 1052 is such that the shape of the turbulent boundary layer at the surface of the rotating disk is generally flat on the surface of the substrate in any direction. Since it is parallel, the distribution of the processing fluid sprayed on the surface of the substrate 1250 can be improved. Since any non-uniform spray patterns generated by one or more nozzles can be minimized by the control of the boundary layer for the delivery of the fluid injected to the surface of the substrate, the boundary layer effect exhibited by the injected processing fluid is a stream of fluid. It may have advantages over conventional spray designs that allow it to hit the surface of the substrate.

The fluid supply provides fluids that are delivered to the nozzles 1402. In Figures 13 and 14, tank 1212 is shown. Tank 1212 includes a fluid inlet 1218 and a hole 1214. The drain 1214 is in fluid communication at atmospheric pressure. In addition, a fluid outlet 1216 is provided. During fluid delivery, gases from nozzle gas supply 1244 are delivered to nozzle 1402 at high velocities. This creates a relatively negative pressure in fluid channel 1422 because it communicates at atmospheric pressure through hole 1214. The fluids are then pressurized through the fluid outlet 1216 to the nozzle 1402.

In general, the processing fluid delivered from the fluid inlet system 1200 may be an active solution, an electroless deposition solution, and / or a cleaning solution that is distributed to the substrate surface during processing. In one embodiment, the processing fluid is an active solution. Examples of active solutions include palladium, including chlorides, bromide, fluorides, fluorborates, iodides, nitrates, sulfates, carbonyls, salts of metal acids, and combinations thereof Salts. In one embodiment, the palladium salts are chlorides such as palladium chloride (PdCl ₂ ). In another embodiment, the palladium salt is nitrate, alkanesulfonate, or other soluble derivatives of Pd ^{+ 2} containing non-mixing anions that do not form clusters on solution or metal surfaces. In one embodiment, the waiting time between the end time when the copper cleaning solution is applied and the start time when the active solution is applied is generally less than about 15 seconds, preferably less than about 5 seconds. The active solution generally acts to deposit an activated metal seed layer onto exposed copper of exposed features. Oxidation of the exposed portion of the copper layer after cleaning can be detrimental to subsequent processing steps because copper oxides are known to have higher electrical resistivity than copper. The short waiting time between copper cleaning and activation minimizes oxidation, and the use of a carrier gas environment around the fluid treatment cell may help prevent oxidation of the exposed portion of the copper layer as described above.

In one embodiment, the processing fluid is an electroless deposition solution. In one embodiment, an electroless deposited capping layer is deposited, which is CoP, CoWP, CoB, CoWB, CoWPB, NiB, or an alloy containing NiWB, and preferably an alloy comprising CoWP or CoWPB. The electroless deposition solution used to form the capping layer may comprise one or more metal salts and one or more reducing agents, depending on the capping material to be deposited. The electroless deposition solution may comprise pH adjusters such as acids or bases as are generally known in the art. When the selected capping layer comprises cobalt, the electroless deposition solution generally comprises a cobalt salt. Examples of cobalt salts include chlorides, bromides, fluorides, acetates, fluoroborates, iodides, nitrates, sulfates, salts of other strong or weak acids, and / or combinations thereof. Preferably, the cobalt salt comprises cobalt sulfate, cobalt chloride or combinations thereof. Once the tungsten containing capping material is deposited, the electroless deposition solution includes tungstate. Preferably, the tungstate salt comprises a salt of tungstic acid, such as tungstate ammonium or tungstate tetramethyl ammonium, or may be produced through neutralization of tungstic acid. Once the nickel containing capping material is deposited, the electroless solution generally contains a nickel salt. Examples of nickel salts are chlorides, bromides, fluorides, acetates, fluoroborates, iodides, nitrates, sulfates, carbonyls, salts of strong or weak acids, and / or combinations thereof It includes.

Selected capping layer materials include phosphorus such as CoP, CoWP or CoWPB, and reducing agents include phosphorus compounds such as hypophosphite anions (H ₂ PO ₂ ). If the capping material comprises boron such as CoB, CoWB, CoWPB, the reducing agent is generally a non-alkali metal salt of a boron compound, dimethylamine-borane (DMAB), borohydride (BH ₄ ) anion, or a combination thereof Contains water. Other reducing agents such as hydrazine may be used in addition to or in place of the aforementioned reducing agents. In one embodiment, a borane co-reducing agent is used for the processes initiated from copper.

As mentioned above, the electroless deposition solution (treatment fluid) and / or the substrate may be heated to a constant temperature. Exemplary temperatures are about 40 ° C to about 95 ° C. In one embodiment, heating the electroless deposition solution and / or substrate structure increases the electroless deposition rate. This helps offset temperature drop caused by the processing fluid when exiting the nozzles 1402. In one embodiment, the deposition rate of the capping material is at least about 100 kW / min. In one embodiment, the capping material is deposited to a thickness of about 100 kPa to about 300 kPa, preferably about 150 kPa to 200 kPa. However, since the deposition rate of the electroless process is known to be temperature dependent, it may be desirable to maintain the temperature for the substrate at a uniform temperature. As such, heating coils 1112 and / or heater 1164 of base plate member 1304 shown in FIG. 9 may be used.

Fluid treatment cell 1010 may also include a fluid outlet system 1240. Fluid outlet system 1240 generally includes an outlet line 1227 connected to a fluid drain 1249. Optionally, one or more outlet lines 1227 may be disposed relative to the cell 1010 to draw the fluids more evenly through the cell 1010. In FIG. 10, it can be seen that four exit lines 1227 are generally provided spaced at equal distances. Multiple outlet lines 1227 may be coupled to a single outlet plenum and fluid drain 1249. Fluid drain 1249 delivers the chamber drain to a drain storage drain (not shown). In summary, processing fluids generally flow through inlet tubing 1225 and then through nozzles 1402 mounted to fluid delivery arm 1406 and then move processing area 1025 toward substrate 1250. Exits through and then out of one or more fluid lines 1227.

Fluid outlet system 1240 includes a gas drain. Gas inlet 1246 extends through sidewall 1015. Discharge system 1248 discharges gases out of treatment area 1025. In one embodiment, the outlet inlet 1246 is a ring / plenum that uniformly draws gas below the surface of the substrate 1250 to improve gas flow near the surface of the substrate 1250.

11 provides a cross-sectional side view of the fluid treatment cell 1010 in an optional embodiment. Fluid intake system 1200 is provided for delivering fluids to the receiving surface of substrate 1250. Process fluids are delivered through one or more nozzles 1402. However, in this embodiment, the nozzles 1402 are disposed in the porous plate 1030 in the chamber lid assembly 1033.

9, 9A-9B, 11 and 11A-11B, chamber lid assembly 1033 includes a porous plate 1030. Preferably, porous plate 1030 is a plate having holes or holes formed to allow fluid to move through. Exemplary materials for the porous plate include ceramic materials (eg alumina), polyethylene (PE), and polypropylene, PVDF, with holes or holes formed therein to allow fluid communication. In one embodiment, a HEPA filter device may be used. In general, HEPA filters use glass fibers that are rolled into a paper-like material. The porous plates 1030 of FIGS. 9, 9A-9B, 11 and 11A-11B are supported by an upper support ring 1031. Chamber lid assembly 1033 generally includes a lid 1032, an upper support ring 1031, and a porous plate 1030. Lead 1032 forms plenum 1034 in the volume between lead assembly 1033 and porous plate 1030. In one embodiment, the porous plate 1030 is sealed to the lid 1032 by the use of two o-ring seals (elements 1036, 1037). Lead 1032 is supported in the device of FIG. 11 by porous plate 1030 and top support ring 1031.

As shown in FIG. 11, in one embodiment of the lid assembly 1033, the treatment solution is formed from the substrate (from the solution sources 1202, 1204, 1206 through the inlet tubing 1225 extending through the lid 1032). Delivered to 1250 and then manifolded with one or more nozzles 1402 in porous plate 1030 leading to a treatment solution at the substrate surface. In one embodiment, to provide a uniform gas flow to the treatment region 1025, the line 1040 passes from the gas supply 1038 to the treatment region 1025 through the plenum 1034 and the porous plate 1030. It is used to provide a flow path for delivering gas. The valves 1035 are adapted to selectively open and close fluid communication between the plenum 1034 and the gas supplier 1038. In one embodiment, the gas supplier 1038 provides an inert gas, such as argon, nitrogen, helium, or a combination thereof, to the treatment region 1025. In another embodiment, the gas supplier 1038 provides an oxygen containing gas to the treatment region 1025. It should be noted that oxygen may be desirable in some steps of electroless deposition processes, for example oxygen may be added during the activation step. In such a configuration, it may be desirable to form or deliver a carrier gas comprising hydrogen and oxygen at a desired rate through the porous plate 1030 to the treatment region 1025.

The plenum 1034 and the porous plate 1030 are positioned on top of the substrate 1250 to allow a laminar flow of carrier gas delivered over the substrate 1250. The streamlined gas flow creates a uniform and vertical gas flow to the substrate 1250. In this way, a uniform boundary layer is provided along the radius of the substrate 1250. In other words, this allows more uniform heat loss over the wafer radius and serves to reduce the condensation and chemical vapors of water on the wafer top and on the wafer. Porous plate 1030 acts as a gas flow diffuser. Thus, the gas flowing through the porous plate 1030 may help induce and uniformly distribute the processing fluid mist flowing from the nozzles 1402 to the receiving surface of the substrate 1250. Finally, gas is exhausted through the exhaust inlet 1246 by the exhaust system 1248. Exhaust system 1248 may generally include a vacuum pump or exhaust fan that draws gas from fluid treatment cell 1010. Note that the outlet inlet 1246 helps to ensure that the gas flow through the substrate 1250 is streamlined.

In one embodiment, a heating element (not shown) is disposed in the lid assembly 1033 adjacent to the plenum 1034. For example, heating coils (not shown) may be disposed in porous plate 1030. This provides heating of the gases delivered from line 1040 and minimizes condensation and droplet formation on top of substrate 1250.

In one embodiment, line 1040 is connected to fluid inlet system 1200 that allows fluid (eg, processing fluids) to be pushed instead of gas through porous plate 1030. In this way, the porous plate 1030 acts like a showerhead delivering the processing fluid to the surface of the substrate 1250.

In one embodiment, line 1040 may act as a fluid delivery line and a fluid removal line through the generation of vacuum pressure at plenum 1034 by the use of vacuum source 1039. Vacuum source 1039 may be used to prevent dripping of any fluid remaining on porous plate 1030 immediately prior to delivering substrate 1250 out of cell 1010. In this regard, a vacuum source 1039, such as a vacuum venturi, is driven to create a vacuum in the plenum 1034, and any fluid on the lower surface of the porous plate 1030 "absorbs" into the plenum 1034. (sucked up) ".

FIG. 11A shows a yellow cross-sectional side view of the electroless process chamber of FIG. 11. In this figure, a gas flow diverter 1102 is provided within the cell 1010. The gas flow diverter 1102 is selectively raised and lowered by the use of a conventional lift mechanism (not shown). As shown in FIG. 11A, the gas flow diverter 1102 is in the lower position and may allow the substrate 1250 to be transferred into and / or out of the fluid processing cell 1010.

FIG. 11B shows another cross-sectional view of the electroless process chamber of FIG. 11 with gas flow diverter 1102. Here, the gas flow diverter 1102 is in an elevated position, thus “straightening” and / or directing the flow of the treatment solution as it passes from the nozzle 1402 and during the treatment, the gas supply 1038 and the porous plate 1030. It can be used to “straighten” and / or direct the flow of gas as it passes from the substrate 1250 toward. Thus, gas flow diverter 1102 is used to improve process fluid and gas flow pattern repeatability and particle performance during processing by limiting the number of obstacles and controlling the flow pattern of the arriving fluid.

It is desirable to provide a means for visually monitoring the progress of fluid dispensed on the substrate 1250 outside of the cell 1010. In the apparatus of FIG. 11, a camera 1360 is provided inside cell 1010. The camera may be disposed along the sidewall 1015, under the porous plate 1030, along the upper support ring 1031, or anywhere else where proper visualization of the substrate 1250 may be obtained. Preferably, the camera 1360 is disposed on the fixing portion of the lid. In the embodiment of FIG. 11, camera 1360 is attached to upper support ring 1031. Camera 1360 is preferably a charge coupled display camera (“CCD camera”) that uses a series of pixels that communicate with controller 111 and record a digital image. A monitor (not shown) is set up outside of cell 1010 to provide an optical visualization of the surface of substrate 1250. In this manner, visualization confirmation may be provided for the validity and timing of the coverage of the electroless treatment fluids of the substrate 1250 during the treatment fluid distribution process or deposition process.

In order to assist the camera 1360, it may be desirable to provide a light source (not shown). The light source is preferably disposed on a fixed portion of the lid, but can be located at any location adjacent to the treatment area 1025. The light source acts to illuminate the substrate 1250 during processing. In one embodiment, camera 1360 is used to detect light in the visible light spectrum.

The visual confirmation is preferably provided through human monitoring. However, in one device, a visual confirmation process is provided through a machine version control type of process. In such an apparatus, an image of the substrate 1250 suitably covered is programmed with the controller 111 (see element 111 above). In one embodiment, the controller 111 monitors the pixel images produced by the camera 1360 during the fluid dispensing process and compares the images with pre-recorded images or other data to determine various decisions about the process. To be done by For example, the fluid dispensing process is not allowed to "time out" or end until the actual substrate image detected by the pixels at camera 1360 at least matches a pre-recorded image.

In one embodiment, the camera 1360 is an infrared camera. Infrared cameras filter visual wavelengths but recognize thermal wavelengths. The temperature difference may be converted into the color or intensity of the detected signal in the detected image as an indication of the temperature differences of the object, ie, the substrate 1250. If the fluid to be dispensed is at a different temperature than the surface of the substrate 1250, the temperature difference will be recorded as the color difference. Fluid distribution continues until the temperature difference that indicates complete coverage of the substrate 1250 disappears. Preferably, the temperature difference is monitored again through the control of the machine version type created by the use of the controller and camera 1360. Thus, complete coverage of the substrate can be ensured.

In another embodiment, camera 1360 may be a spectrometer used to receive input light and output data representing various light wavelengths and their intensities. For example, red light has larger light component intensities that are grouped within the lower wavelengths of the visible light spectrum. The spectrometer typically includes an optical prism (or grating) interface that optically divides the input signal into components that project into a linear CCD detector array. One embodiment of the spectrometer may include a CCD detector array comprising thousands of individual detector elements (eg pixels) that receive a composite spectrum from the prism (or grating). After collecting the intensity for the wavelength data, the controller 111 in communication with the camera 1360 compares the currently received information with past or user-defined values, thereby providing electroless deposition process steps and processing variables (eg, Fluid coverage, processing time, substrate temperature, substrate rotation speed) can be controlled to optimize processing results.

In one device, camera 1360 closes through software optimization of flow duration and fluid delivery arm 1406 movement from chemical nozzles 1402 to ensure that the surface of substrate 1250 has continuous chemical coverage. Can be operated under loop control. Closed loop control may be performed by the use of components of the camera 1360, the dispensing arm motor 1404, and the fluid inlet system 1200, all connected and controlled by the controller 111.

12 illustrates a cross-sectional view of the fluid treatment cell 1010 in an additional optional embodiment. Here, processing fluids are provided to the receiving surface of the substrate 1250 by spraying the fluids through nozzles 1402 disposed in the porous plate 1030. In this embodiment, the porous plate 1030 is selectively raised and lowered relative to the substrate 1250. More specifically, chamber lid assembly 1033 moves axially relative to substrate 1250. To achieve this axial movement, chamber lead lift assembly 1079 is used. A chamber lead actuator (conceptually referred to as 1080 ') connected to the chamber lead assembly 1033 may be used as part of the chamber lead lift assembly 1079. Actuator 1080 'is preferably an electric actuator, and in one embodiment is a linear DC servo motor. However, actuator 1080 'may alternatively be a pneumatically driven air cylinder. In this configuration, by driving the motor 1080 ', the chamber lid lift assembly 1079 controls the volume of the treatment area 1025 between the porous plate 1030 and the substrate 1250 thereunder. Such a device is useful for controlling gas flow and oxygen levels near the surface of the substrate 1250.

Various embodiments of the electroless plate cell described above have been described in the scope of processing the substrate 1250. However, during some holding operations, it may be desirable to operate the processing cell 1010 without a substrate on the support fingers 1300 (or support ring). More specifically, the fluid inlet system 1200 and the fluid outlet system 1240 can be operated without the placement of a substrate in the treatment region 1025. For example, deionized water or other cleaning or rinsing fluid may be transferred to a substrate support finger through a fluid delivery arm (such as fluid delivery arm 1406 of FIG. 9) or a fluid delivery plate (such as porous plate 1030 of FIG. 11). To 1300 and other chamber components. This step may end to clean the substrate support fingers 1300 and other chamber portions to reduce particle levels in the processing cell 1010. For further assistance in this cleaning step, the fluid delivery arm can be lowered (FIG. 9B), the fluid delivery head can be lowered (FIG. 12) or the substrate support assembly raised (FIG. 9A).

While the foregoing detailed description is directed to embodiments of the invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. do.

The present invention has the effect of providing an integrated electroless deposition apparatus capable of depositing a uniform layer with minimal defects.

Claims (22)

An electroless processing chamber having a processing region adapted to process a substrate, Platen assembly located in the processing region The platen assembly, A base member having a fluid opening therethrough, A fluid diffusion member sealably positioned in said base member and having an upstream side and a downstream side and having a plurality of fluid passages in fluid communication between said upstream side and downstream side, A fluid volume formed between the base member and the upstream side of the fluid diffusion member, and A feature protruding a first distance above a downstream side of the fluid diffusion member; And A rotatable substrate support assembly positioned in the processing region and having a substrate support surface, the rotatable substrate support assembly adapted to rotate relative to the platen assembly Electroless processing chamber comprising a. The method of claim 1, And wherein the fluid diffusion member is substantially disk shaped and the surface of the feature coincides with an outer edge of the disk shaped fluid diffusion member. The method of claim 1, The first distance is about 0.5 mm to about 25 mm. The method of claim 1, And wherein the downstream surface of the fluid diffusion member has a surface roughness (R _a ) of about 1.6 μm to about 20 μm. An electroless processing chamber having a processing region adapted to process a substrate, the process comprising: Platen assembly located in the treatment area The platen assembly, A base member having a fluid opening therethrough, A fluid diffusion member sealably positioned in said base member and having an upstream side and a downstream side, A fluid volume formed between the base member and the upstream side of the fluid diffusion member, and A plurality of fluid passages formed in the fluid diffusion member, the plurality of fluid passages in fluid communication between a downstream side and an upstream side of the fluid diffusion member, at least one of the plurality of fluid passages being in fluid communication with the upstream side Further comprising a first feature in communication and having a first cross-sectional area, and a second feature having a second cross-sectional area; Including-; And A rotatable substrate support assembly positioned in the processing region and having a substrate support surface, the rotatable substrate support assembly adapted to rotate relative to the platen assembly Electroless processing chamber comprising a. The method of claim 5, And the second cross-sectional area is wider than the first cross-sectional area. The method of claim 5, The plurality of fluid passages, An array of at least four fluid passageways distributed substantially uniformly with respect to said downstream side; And An annular feature projecting a first distance above the downstream surface, the first distance being from about 0.5 mm to about 25 mm An electroless treatment chamber comprising a. The method of claim 5, And the array of fluid passageways is arranged in a square, rectangular, circular or hexagonal sealed packed orientation. The method of claim 5, At least two or more of the plurality of fluid passages further comprise a first cylindrical shape with respect to a length portion extending from the upstream side, and a second cylindrical shape in fluid communication with the first cylindrical shape, wherein the second cylinder And wherein the shape has a larger cross-sectional area than the first cylindrical shape. An electroless processing chamber adapted to process a substrate, A rotatable substrate support assembly positioned in the processing region of the electroless processing chamber and having one or more substrate support surfaces; An edge dam positioned in the processing region and having a first surface, wherein a substrate located on the edge barrier and / or the one or more substrate support surfaces is disposed between the first surface of the edge barrier and an edge of the substrate. Can be positioned to form a gap therein; And A fluid source positioned to deliver an electroless treatment solution to a surface of a substrate located on the substrate support surfaces Electroless processing chamber comprising a. The method of claim 10, And the fluid source further comprises a fluid heater in thermal communication with the electroless treatment solution delivered from the fluid source. The method of claim 10, And the edge partition wall further comprises a lift assembly adapted to position the edge partition wall relative to the surface of the substrate located on the one or more substrate support surfaces. An electroless processing chamber adapted to process a substrate, A rotatable substrate support assembly positioned in the processing region of the electroless processing chamber, the rotatable substrate support assembly having one or more substrate support features each having a substrate support surface; Bowl assembly having one or more walls located in the processing area and forming a fluid volume, the fluid volume being sized to allow the one or more substrate support features to erode the fluid located in the fluid volume. Has-; And A fluid source in fluid communication with the fluid volume and a substrate located on the one or more substrate support surfaces Electroless processing chamber comprising a. The method of claim 13, And the electroless processing chamber further comprises a fluid heater in thermal communication with the fluid located in the fluid volume. The method of claim 13, And the electroless processing chamber further comprises a lift assembly adapted to position the rotatable substrate support assembly relative to one or more walls of the bowl assembly. The method of claim 13, The rotary substrate support assembly, A plenum in fluid communication with the substrate support surface; And And a vacuum source in fluid communication with the substrate located on the plenum and the substrate support surface. An electroless processing chamber adapted to process a substrate, A substrate support assembly positioned in a processing region of the electroless processing chamber, the substrate support assembly having one or more spaced apart substrate support features each having a substrate support surface; A bowl assembly having one or more walls located in the processing region and forming a fluid volume, the fluid volume sized to allow the one or more spaced substrate support features to erode the fluid located in the fluid volume; A motor adapted to rotate the one or more spaced substrate support features; A gap formed between the surface of the substrate located on the one or more spaced substrate support features and the surface of one or more walls of the bowl; And A fluid source in fluid communication with the fluid volume and the surface of the substrate located on the one or more substrate support surfaces Electroless processing chamber comprising a. An electroless processing chamber adapted to process a substrate, Platen assembly located in the treatment area-The platen assembly, A fluid diffusion member having an upstream side and a downstream side and a plurality of fluid passages adapted to provide fluid communication between the upstream side and the downstream side, A first base member having a first fluid opening formed therethrough, wherein the first base member is sealably positioned in the fluid diffusion member, the first fluid opening being one of the plurality of fluid passages formed in the fluid diffusion member; In fluid communication with at least one-, and A second base member having a second fluid opening formed therethrough, the second base member being sealably positioned in the fluid diffusion member, the second fluid opening being at least one of the plurality of fluid passages formed in the fluid diffusion member; In fluid communication with one- Including-; And A rotatable substrate support assembly positioned in the processing region and having a substrate support surface, the rotatable substrate support assembly adapted to rotate relative to the platen assembly Electroless processing chamber comprising a. A method of processing a substrate in an electroless processing chamber, Positioning the substrate on a substrate receiving surface on the substrate support; Positioning the substrate support a distance away from the diffusion member; Flowing a temperature controlled fluid through a plurality of fluid passages formed in the diffusion member such that the temperature controlled fluid contacts the first surface of the substrate; Rotating the substrate and the substrate support relative to the diffusion member; And Distributing an electroless deposition treatment fluid on a second surface of the substrate to deposit an electroless layer on the second surface of the substrate Substrate processing method of an electroless processing chamber comprising a. The method of claim 19, Dispensing the electroless deposition treatment fluid, Flowing the electroless deposition treatment fluid from the source; Positioning a nozzle over a second surface of the substrate using a movable arm assembly; And And dispensing said electroless deposition process fluid from said nozzle to said substrate. The method of claim 19, Degassing said electroless deposition process fluid prior to dispensing said electroless deposition process fluid on said second surface of said substrate. A method of processing a substrate in an electroless processing chamber having a processing region, the method comprising: Positioning the substrate on a substrate receiving surface of the substrate support held in the processing region; Positioning the substrate receiving surface a distance away from the diffusion member held in the processing region; Rotating the substrate and the substrate support relative to the diffusion member; Flowing gas from a processing gas source into the processing region; Flowing a fluid through a plurality of fluid passages formed in the diffusion member; Positioning the substrate receiving surface a distance away from the diffusion member such that the first surface of the substrate is in contact with the flow fluid; And Distributing a first electroless deposition treatment fluid on a second surface of the substrate Substrate processing method of an electroless processing chamber comprising a.

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