JP2018133560A - 半導体基板を電気化学的に処理するための装置 - Google Patents
半導体基板を電気化学的に処理するための装置 Download PDFInfo
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- JP2018133560A JP2018133560A JP2018009665A JP2018009665A JP2018133560A JP 2018133560 A JP2018133560 A JP 2018133560A JP 2018009665 A JP2018009665 A JP 2018009665A JP 2018009665 A JP2018009665 A JP 2018009665A JP 2018133560 A JP2018133560 A JP 2018133560A
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Abstract
Description
メインチャンバ;
ウェハをメインチャンバに導入するための、メインチャンバに接続された少なくとも1つのローディングポート;
3つ又は4つ以上の実質的に鉛直方向にスタックされたウェハ処理モジュール(wafer processing modules)を含むウェハ処理モジュールの少なくとも1つのスタックであって、前記スタックにおいて隣接するウェハ処理モジュールは50cm未満の鉛直方向分離を有し、各処理モジュールは、ウェハ処理モジュール内にウェハの前面が上方に向いた状態でウェハが実質的に水平に配置されているときにウェハを処理するように構成されており、少なくとも1つのウェハ処理モジュールが電気化学的ウェハ処理モジュールである、ウェハ処理モジュールの少なくとも1つのスタック;及び
ローディングポートと処理モジュールとの間でウェハを搬送するための搬送機構;
を備える装置である。
ローディングポートを介してメインチャンバにウェハを導入するステップ;
搬送機構を使用してウェハをスタックにおける第1のウェハ処理モジュールに搬送し、ウェハを、その前面が上方に向いた状態で第1のウェハ処理モジュール内に実質的に水平に配置するステップ;及び
第1のウェハ処理モジュール内でウェハの前面に対して処理ステップを実施するステップ;
を含む方法である。
Claims (23)
- 半導体ウェハの前面を処理するための装置であって、
メインチャンバ;
前記ウェハを前記メインチャンバに導入するための、前記メインチャンバに接続された少なくとも1つのローディングポート;
3つ又は4つ以上の実質的に鉛直方向にスタックされたウェハ処理モジュールを含むウェハ処理モジュールの少なくとも1つのスタックであって、前記スタックにおいて隣接する前記ウェハ処理モジュールは50cm未満の鉛直方向分離を有し、各処理モジュールは、前記ウェハ処理モジュール内に前記ウェハの前面が上方に向いた状態で前記ウェハが実質的に水平に配置されているときに前記ウェハを処理するように構成されており、少なくとも1つのウェハ処理モジュールが電気化学的ウェハ処理モジュールである、ウェハ処理モジュールの少なくとも1つのスタック;及び
前記ローディングポートと前記処理モジュールとの間で前記ウェハを搬送するための搬送機構;
を備える装置。 - 前記電気化学的ウェハ処理モジュールが、使用時に、表面に対して封止して密封キャビティを規定するシールを備え、当該密封キャビティ内で電気化学的処理が行われる、請求項1に記載の装置。
- 前記シールが、使用時に、前記ウェハの表面、好ましくは前記ウェハの上面に対して封止して密封キャビティを規定し、当該密封キャビティ内で電気化学的処理が行われる、請求項2に記載の装置。
- さらに、少なくとも1つのウェハキャリアアレンジメントを備え、当該ウェハキャリアアレンジメントに前記ウェハをロードすることができ、前記ウェハキャリアアレンジメントは、使用時に、前記ウェハの表面、好ましくは前記ウェハの上面に対して封止するシールを備え、前記搬送機構は、前記ローディングポートと前記処理モジュールとの間でウェハをロードしたキャリアアレンジメントを搬送するように構成されている、請求項1又は2に記載の装置。
- 前記電気化学的ウェハ処理モジュールの前記シールが、使用時に、前記ウェハキャリアアレンジメントの表面に対して封止して密封キャビティを規定し、当該密封キャビティ内で電気化学的処理が行われる、請求項2に従属した場合の請求項4に記載の装置。
- さらに、前記ウェハキャリアアレンジメントにウェハをロードするためのウェハキャリアアレンジメントローディングステーションを備える、請求項4又は5に記載の装置。
- 前記スタックにおいて隣接する処理モジュールが25cm未満の鉛直方向分離を有する、請求項1〜6のいずれか一項に記載の装置。
- 前記搬送機構が、前記ローディングポートと前記処理モジュールとの間での前記ウェハの自動化搬送のために少なくとも1つのエンドエフェクタを有する搬送ロボットを備える、請求項1〜7のいずれか一項に記載の装置。
- 前記ウェハ処理モジュールのうちの少なくとも1つが電気化学的堆積ウェハ処理モジュールを備える、請求項1〜8のいずれか一項に記載の装置。
- 前記ウェハの前面が電極を備える、請求項1〜9のいずれか一項に記載の装置。
- 前記処理モジュールが前記スタックから取り出し可能である、請求項1〜10のいずれか一項に記載の装置。
- 前記処理モジュールが、前記スタックから実質的に水平方向に取り出し可能である、請求項11に記載の装置。
- 前記処理モジュールは、旋回、スライディングによって、又は任意の他の適切な手段によって、前記スタックから取り出し可能である、請求項11又は12に記載の装置。
- 2つ又は3つ以上の半導体ウェハの前面を並列に処理するように構成された、請求項1〜13のいずれか一項に記載の装置。
- 請求項1に記載の装置を使用して半導体ウェハを処理する方法であって、
前記ローディングポートを介して前記メインチャンバに前記ウェハを導入するステップ;
前記搬送機構を使用して前記ウェハを前記スタックにおける第1のウェハ処理モジュールに搬送し、前記ウェハを、その前面が上方に向いた状態で第1のウェハ処理モジュール内に実質的に水平に配置するステップ;及び
第1のウェハ処理モジュール内で前記ウェハの前面に対して処理ステップを実施するステップ;
を含む方法。 - 前記搬送機構を使用して前記スタックにおける第1のウェハ処理モジュールから第2のウェハ処理モジュールに前記ウェハを搬送して、前記ウェハを第2のウェハ処理モジュール内に実質的に水平に配置させるさらなるステップ;及び、
第2のウェハ処理モジュール内で前記ウェハの前面に対して処理ステップを実施するさらなるステップ;
を含む、請求項15に記載の方法。 - 前記装置からのその後の搬出のために前記搬送機構を使用してウェハ処理モジュールから前記ローディングポートに前記ウェハを搬送するさらなるステップを含む、請求項15又は16に記載の方法。
- 前記ウェハの前面に対して実施される少なくとも1つの処理ステップが、化学的、電気化学的、リンシング、クリーニング、スピニング又は乾燥ステップを含む群から選択される、請求項15〜17のいずれか一項に記載の方法。
- 前記ウェハの前面に対して実施される処理ステップが前記電気化学的ウェハ処理モジュール内で実施される電気化学的処理ステップであり、前記電気化学的ウェハ処理モジュールが、表面に対して封止して密封キャビティを規定するシールを備え、当該密封キャビティ内で電気化学的処理が行われる、請求項18に記載の方法。
- 前記ウェハの前面に対して行われる少なくとも1つの処理ステップの間に、前記ウェハに電気バイアスが印加される、請求項15〜19のいずれか一項に記載の方法。
- 2つ又は3つ以上の半導体ウェハが並列に処理される、請求項15〜20のいずれか一項に記載の方法。
- 前記ウェハ処理モジュールへのアクセスを提供するために前記スタックから実質的に水平方向にウェハ処理モジュールを取り出すステップを含む、請求項1に記載の装置を整備する方法。
- 前記スタックから実質的に水平方向に前記ウェハ処理モジュールを取り出すステップが、前記処理モジュールを旋回又はスライドさせることを含む、請求項22に記載の方法。
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