US20050173253A1 - Method and apparatus for infilm defect reduction for electrochemical copper deposition - Google Patents
Method and apparatus for infilm defect reduction for electrochemical copper deposition Download PDFInfo
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- US20050173253A1 US20050173253A1 US10/774,194 US77419404A US2005173253A1 US 20050173253 A1 US20050173253 A1 US 20050173253A1 US 77419404 A US77419404 A US 77419404A US 2005173253 A1 US2005173253 A1 US 2005173253A1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
- C23C18/1692—Heat-treatment
- C23C18/1694—Sequential heat treatment
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/02—Heating or cooling
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/08—Rinsing
Abstract
Embodiments of the invention provide a method and apparatus for processing a substrate. The apparatus includes a substrate rinse cell configured to dispense a heated processing fluid onto the substrate prior to an annealing process. The method includes plating a conductive layer onto a substrate, heating the substrate in a cleaning cell via application of a heated cleaning fluid to the substrate, drying the substrate in the cleaning cell, and annealing the substrate at an annealing station at a temperature of between about 150° C. and about 450° C.
Description
- 1. Field of the Invention
- Embodiments of the invention are generally related to a method for minimizing defects resulting from thermal shock encountered by a substrate during transfer from a fluid processing cell into an annealing chamber.
- 2. Description of the Related Art
- Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio, i.e., greater than about 4:1, interconnect features with a conductive material. The most common conductive material used in large scale integration devices is copper. Copper is generally deposited into the high aspect ratio features of these devices using plating processes, such as electrochemical plating (ECP) and/or electroless plating.
- In an ECP process, for example, high aspect ratio features formed into the surface of a substrate, which generally have a conductive seed layer deposited thereon, are filled with a conductive material. ECP processes are generally performed in a two stages. First, the seed layer is formed over the surface features, generally through PVD, CVD, or other deposition process. Second, the surface features of the substrate having the seed layer thereon are exposed to an electrolyte solution, while an electrical bias is applied between the seed layer and an anode positioned in the solution. The solution contains the conductive material to be plated onto the surface of the substrate, and the application of the electrical bias between the seed layer and the anode is configured to cause the conductive material in the solution to be plated onto the seed layer and into the interconnect features, thus filling the features.
- Once the plating process is completed, the substrate is generally transferred to at least one of a substrate rinsing cell or a bevel edge clean cell. Bevel edge clean cells, often called IBC cells, are generally configured to dispense an etchant onto the perimeter of the substrate to remove unwanted metal plated thereon. The substrate rinse cells, often called spin rinse dry cells, or “SRD” cells, generally operate to rinse the entire surface of the substrate, front and/or back, with a rinsing and/or cleaning solution to remove any excess processing fluids or contaminants therefrom. The SRD cells are also generally configured to spin the substrate at a high rate of speed in order to spin off any fluid droplets adhering to the substrate surface. Once the remaining fluid droplets are spun off, the substrate is generally clean and dry.
- Once the substrate is clean and dry, the substrate is generally exposed to an increased temperature to stabilize film properties, such as the crystalline structure and the resistivity of the film. For this portion of the process, the substrate may be transferred to an annealing station. A typical annealing station may include an enclosure having a heated substrate support member positioned therein. Alternatively, a substrate support member may be used to support the substrate, while a heating source, such as heating lamps, is used to heat the substrate. Regardless of the heating source used, the annealing station is generally configured to increase the temperature of the substrate from room temperature to between about 200° C. and about 400° C. in less than about 1 minute.
- However, one challenge with conventional plating systems is that the rapid increase in the temperature of the substrate in the annealing chamber has been shown to cause voids and cracking in the plated layer and between the plated layer and the adjoining dielectric layer. Voids and cracks in the plated layer may be reduced by slowing the anneal temperature ramp, however, slowing the temperature ramp inherently slows the throughput of the ECP process, which is critical to semiconductor processing.
- Therefore, there is a need for an ECP system and method for processing substrates, wherein the system and method includes an annealing step that both maximizes throughput and minimizes voids and cracking that result from rapid temperature ramp processes.
- Embodiments of the invention generally provide a semiconductor processing apparatus and method configured to minimize voids and cracks in films resulting from rapid anneal temperature ramping. The apparatus of the invention includes a fluid processing cell configured to preheat the substrate prior to the substrate being transferred to the annealing chamber. The fluid processing cell that is used to preheat the substrate is generally an SRD cell. The method of the invention generally includes supplying a heated fluid to an SRD cell on a semiconductor processing platform. The heated fluid is used to increase the temperature of the substrate to a temperature between room temperature and the annealing temperature prior to the substrate being transferred to the annealing chamber. Further, the heated fluid is applied as part of a previously required processing step, i.e., a rinsing step, and as such, the application of the heated fluid does not have a negative impact on the throughput of the system. Preheating prior to anneal may also be used to shorten the required anneal time, and as such, increase throughput of the processing system.
- Embodiments of the invention may further provide a method for processing a substrate. The method includes plating a conductive layer onto a substrate, transferring the substrate from a plating cell to a cleaning cell, cleaning the substrate in the cleaning cell via application of a heated cleaning fluid to the substrate, drying the substrate in the cleaning cell, transferring the substrate from the cleaning cell to an annealing chamber, and annealing the substrate in the annealing chamber at a temperature of between about 150° C. and about 450° C.
- Embodiments of the invention may further provide a method for processing a substrate, wherein the method includes plating a conductive layer onto a substrate, rinsing the substrate of unwanted residue chemicals, preheating the substrate during the rinsing process to a temperature of between about 25° C. and about 100° C., and annealing the substrate in an annealing chamber at a temperature of up to about 450° C. subsequent to the preheating process.
- Embodiments of the invention may further provide an apparatus for processing a substrate, wherein the apparatus includes a plating cell positioned on a processing platform, the plating cell being configured to plate a conductive layer onto the substrate, a rinsing cell positioned on the processing platform, and an annealing station positioned on the processing platform. The rinsing cell generally includes a substrate support member configured to support the substrate for processing, a fluid dispensing nozzle positioned to dispense a rinsing solution onto the substrate, and a fluid heating assembly positioned in fluid communication with the fluid dispensing nozzle, the fluid heating assembly being configured to supply a heated rinsing solution at a temperature of between about 50° C. and about 100° C.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
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FIG. 1 illustrates a top plan view of one embodiment of an electrochemical plating system of the invention. -
FIG. 2 illustrates an exemplary embodiment of a plating cell used in the electrochemical processing system of the invention. -
FIG. 3 illustrates a partial perspective and sectional view of an exemplary substrate spin rinse dry cell of the invention. -
FIG. 4 illustrates a partial perspective and sectional view of an exemplary substrate rinse and dry cell of the invention. - Embodiments of the invention generally provide an electrochemical plating system configured to plate conductive materials onto semiconductor substrates. The plating system generally includes a substrate loading area in communication with a substrate processing platform. The loading area is generally configured to receive substrate containing cassettes and transfer substrates received from the cassettes into the plating system for processing. The loading area generally includes a robot configured to transfer substrates to and from the cassettes and to the processing platform or a substrate annealing chamber positioned in communication with the loading area. The processing platform generally includes at least one substrate transfer robot and a plurality of substrate processing cells, i.e., ECP cells, bevel clean cells, spin rinse dry cells, substrate cleaning cells, and/or electroless plating cells.
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FIG. 1 illustrates a top plan view of anexemplary ECP system 100 of the invention.ECP system 100 includes afactory interface 130, which is also generally referred to as a substrate loading station. Thefactory interface 130 includes a plurality of substrate loading locations (not shown) configured to interface withsubstrate containing cassettes 134. Arobot 132 is positioned in thefactory interface 130, and is configured to access the substrates contained incassettes 134. Further,robot 132 also extends into alink tunnel 115 that connects thefactory interface 130 to a substrate processing mainframe orplatform 113. Thefactory interface robot 132 generally includes the ability to rotate, extend, and vertically move an attached substrate support blade, while also allowing for linear travel along a robot track that generally extends from thefactory interface 130 to themainframe 113. - The position of the
robot 132 allows therobot 132 to accesssubstrate cassettes 134 positioned on the loading stations, and to then deliver the substrates to one of the processing cell stations shown at 114 and 116 on themainframe 113. Similarly, therobot 132 may be used to retrieve substrates from theprocessing cells annealing chamber 135. After a substrate processing sequence is complete,robot 132 generally operates to return substrates to one of thecassettes 134 for removal from theECP system 100. Additional configurations and implementations of an electrochemical processing system are illustrated in commonly assigned U.S. patent application Ser. No. 10/435,121 filed on Dec. 19, 2002 entitled “Multi-Chemistry Electrochemical Processing System”, which is incorporated herein by reference in its entirety. - The
anneal chamber 135 generally includes a two position annealing station, wherein acooling plate 136 and aheating plate 137 are positioned adjacently with asubstrate transfer robot 140 positioned proximate thereto, e.g., between the two plates. Therobot 140 is generally configured to move substrates between therespective heating 137 and coolingplates 136. Further, although theanneal station 135 is illustrated as being positioned such that it is accessed from thelink tunnel 115, embodiments of the invention are not limited to any particular configuration or placement. As such, theanneal station 135 may be positioned in communication with themainframe 113. Additional information relative to theanneal station 135 of the invention may be found in a commonly assigned U.S. Patent Application Ser. No. 60/463,860, entitled “Two Position Anneal Chamber,” which is hereby incorporated by reference in its entirety. -
ECP system 100 also includes aprocessing mainframe 113. Asubstrate transfer robot 120 is positioned on themainframe 113, and includes one ormore blades robot 120 and the accompanyingblades robot 120 may insert and remove substrates from a plurality of processingcells mainframe 113. Generally, processingcells process controller 111, which may be a microprocessor-based control system configured to receive inputs from a user and/or various sensors positioned on thesystem 100 and appropriately control the operation of thesystem 100 in accordance with the inputs and/or a predetermined control sequence. - In the exemplary plating system illustrated in
FIG. 1 ,processing stations mainframe 113, e.g., plating cells, cleaning cells, etc., and the dry processing regions in thelink tunnel 115, annealingchamber 135, and thefactory interface 130. The processing cells located at the interface stations may be spin rinse dry cells or other type of substrate cleaning cells. More particularly, processingcells cells cells -
FIG. 2 illustrates a partial perspective and sectional view of an exemplaryelectrochemical plating cell 200 that may be implemented in processingcell locations electrochemical plating cell 200 includes anouter basin 201 and aninner basin 202 positioned withinouter basin 201. Theinner basin 202 is generally configured to contain a plating solution that is used to plate a metal, e.g., copper, onto a substrate during an electrochemical plating process. During the plating process, the plating solution is generally continuously supplied toinner basin 202, and as such, the solution continually overflows the uppermost point (generally termed a “weir”) of theinner basin 202, and is collected by anouter basin 201. The plating solution is then drained and collected for chemical management and/or recirculation. Theframe member 203 of platingcell 200 supports an annular base member on an upper portion thereof. Sinceframe member 203 is elevated on one side, the upper surface ofbase member 204 is generally tilted from horizontal at an angle that corresponds to the angle offrame member 203 relative to a horizontal position.Base member 204 includes an annular or disk shaped recess formed into a central portion thereof, the annular recess being configured to receive a disk shapedanode member 205.Base member 204 further includes a plurality of fluid inlets/drains 209 extending from a lower surface thereof. Each of the fluid inlets/drains 209 are generally configured to individually supply or drain a fluid to or from either the anode compartment or the cathode compartment of platingcell 200.Anode member 205 generally includes a plurality ofslots 207 formed therethrough, wherein theslots 207 are generally positioned in parallel orientation with each other across the surface of theanode 205. The parallel orientation allows for dense fluids generated at the anode surface to flow downwardly across the anode surface and into one of theslots 207. Platingcell 200 further includes amembrane support assembly 206.Membrane support assembly 206 is generally secured at an outer periphery thereof to thebase member 204, and includes an interior region configured to allow fluids to pass therethrough. - A
membrane 208 is stretched across thesupport 206. The membrane operates to fluidly separate catholyte chamber and anolyte chamber portions of the platingcell 200. The membrane support assembly may include an o-ring type seal positioned near a perimeter of themembrane 208, wherein the seal is configured to prevent fluids from traveling from one side of the membrane secured on themembrane support 206 to the other side of themembrane 208. Adiffusion plate 210, which is generally a porous ceramic disk member, is configured to generate a substantially laminar flow or even flow of fluid in the direction of the substrate being plated. Thediffusion plate 210 is positioned in thecell 200 betweenmembrane 208 and the substrate being plated. The exemplary plating cell is further illustrated in commonly assigned U.S. patent application Ser. No. 10/268,284, which was filed on Oct. 9, 2002 under the title “Electrochemical Processing Cell”, claiming priority to U.S. Provisional Application Ser. No. 60/398,345, which was filed on Jul. 24, 2002, both of which are incorporated herein by reference in their entireties. -
FIG. 3 illustrates a partial perspective and sectional view of an exemplary substrate spin rinsedry cell 300 of the invention. The spin rinse dry cell 300 (SRD) includes afluid bowl 301 supported on a frame that may be attached to a plating system, such as themainframe 113 illustrated inFIG. 1 . TheSRD 300 further includes arotatable flywheel 302 centrally positioned in thefluid bowl 301. Theflywheel 302 may include a generally planar or curved upper surface that has a plurality of backsidefluid dispensing nozzles 308 formed thereon and at least onegas dispensing nozzle 310 formed thereon. Thesenozzles substrate 304. In one embodiment,flywheel 302 is covered by ahorizontal shield 330 on an upper surface thereof, and by avertical shield 331 on a side or vertical surface thereof. Both shields 330, 331 are positioned to be stationary and adjacent to theflywheel 302. More particularly,horizontal shield 330 may be attached to thecentral hub 320 and extend radially outward therefrom. Further, shield 330 may be positioned to essentially float above therotating flywheel 302 with a space between therotating flywheel 302 and theshield 330 being between about 1 mm and about 5 mm, for example. Similarly,vertical shield 331 may be attached tobasin shield member 312 and be positioned to be spaced from a vertical edge of theflywheel 302 by a distance of between about 1 mm and about 5 mm, for example. The positioning ofshields flywheel 302. More particularly, the exposedsurface area 332 offlywheel 302 is know to cause turbulent airflow incell 300. Since turbulent airflow does not facilitate effective drying of substrates, minimization of turbulent airflow is desired. Thus, in one embodiment of the invention, the exposed rotating surface area of theflywheel 332 is minimized in order to minimize induced turbulence in the airflow within thecell 300. - A plurality of upstanding
substrate engaging fingers 303 are positioned radially around the perimeter offlywheel 302. Generally,fingers 303 are airfoil shaped when viewed from the top, so that thefingers 303 will generate minimal turbulence whenflywheel 302 is rotated. In the illustrated embodiment of the invention, fourfingers 303 may be utilized, however, the invention is not limited to any particular number of fingers.Fingers 303 are configured to rotatably support asubstrate 304 at the bevel edge thereof for processing inSRD 300. Together, theflywheel 302 and thesubstrate engaging fingers 303 serve as a rotatable substrate support member. However, other embodiments may be provided where the engagingfingers 303 are connected to the side wall or other components of the cell than a flywheel. - The
processing cell 300 also includes afluid dispensing arm 350 that may be pivotally mounted to the side wall, or a structure positioned outside of thecell 300, such that a distal end of the arm having a fluid dispensing nozzle positioned thereon may be pivoted to a position over asubstrate 304 being processed in thecell 300. The pivotal motion of thearm 350 is generally in a plane that is parallel and above thesubstrate 304 being processed. The pivotal movement of thearm 350 allows the nozzle positioned on the end of thearm 350 to be positioned over specific radial positions on the substrate, i.e., over the center of the substrate or over a point that is a specific radius from the center of thesubstrate 304, for example. - Processing
cell 300 also includes anupper cell wall 309 attached to thecatch cup 314 andcurved surface 316, all of which may be raised and lowered to facilitate loading and unloading of substrates. For example, when a substrate is loaded,upper wall 309 may be raised fromcell bowl 301 to allow for access to thesubstrate engaging fingers 303. When processing begins, then wall 309 may be lowered to position thecatch cup 314 andcurved wall 316 next to the substrate so the that the fluid spun off of the substrate may be captured and airflow over the perimeter of the substrate controlled. Exemplary processing cells that may be used to advantage to practice the invention include commonly assigned U.S. patent application Ser. No. 10/680,616, filed Oct. 6, 2003 and U.S. Pat. No. 6,290,865, both of which are hereby incorporated by reference in their entireties. - Processing
cell 300 also includes a heating source configured to increase the temperature of the substrate during a fluid processing step. The heating source may include a heatedfluid source 375 in fluid communication with thefluid dispensing arm 350 and/or thebackside nozzles 308. The source ofheated fluid 375 may include a fluid tank having aresistive heating element 382 positioned therein.Heating element 380 is in electrical communication with a source ofpower 382. The source ofpower 382 may be in communication withcontroller 111, and as such, be controlled bycontroller 111 illustrated inFIG. 1 . The tank may be in fluid communication with another tank or supply, such as a deionized water supply, that is configured to supply fresh rinsing fluid to the tank. Other fluid sources that may be in communication with the tank include cleaning solutions, etching solutions, and/or other solutions that may be useful in an electrochemical plating process, such as acids, peroxides, and mixtures thereof. One exemplary solution may be a combination of an acid and peroxide, which is generally used to conduct a bevel etching process in semiconductor processing. Further, the source ofheated fluid 375 may include a fluid temperature measuring device, e.g., athermocouple 381, positioned in the tank to measure the temperature of the fluid in the tank. Thethermocouple 381 may be in electrical communication with thesystem controller 111, and as such, thesystem controller 111 may be used to control the temperature of the fluid in the tank by controlling the operation of theheating element 380 in accordance with data received from thethermocouple 381 and/or a processing recipe. Therefore, the source ofheated fluid 375 may be generally configured to maintain a fluid solution therein at a predetermined temperature. - In another embodiment of the invention, the source of
heated fluid 375 may be replaced or supplemented withheating lamps 402 positioned to heat the substrate during the fluid processing step, as illustrated on processingcell 400 inFIG. 4 . In this configuration, theheating lamps 402 may be used to apply radiant heat to the substrate while the rinsing solution is being applied to the substrate, which increases the substrate temperature during a rinsing step without having to provide a heated fluid. Further, the heating lamp may remain on during the spin dry process, which operates to further increase the substrate temperature even after the rinsing step is completed. Additionally, in this configuration, a temperature monitoring apparatus may be used to monitor the temperature of the substrate and to control the application of electrical power to thelamps 402 in accordance with the monitored temperature and a control program, for example. In addition to conducting the pre anneal-type process described above, the heated fluid and/or theheating lamps 402 may be used to completely anneal a substrate. For example,process cell lamps 402. The duration of the annealing process incells heating lamps 402, processingcell 400 is generally similar toprocessing cell 300, and as such, numbering has been preserved in the respective figures. However, in the embodiment wherecell 400 is used for a complete annealing process,cell 400 may be modified to include an enclosure that is configured to isolate the processing cell environment from ambient. Additionally, the processing cell environment may be in fluid communication with a vacuum pump and/or a process gas supply, such as nitrogen, hydrogen, helium, argon, etc. The combination of the vacuum pump and gas supply allows for the processing environment of the cell to be controlled, and more particularly, for the oxygen content to be minimized. - In operation, embodiments of the invention are generally configured to preheat a substrate prior to an anneal process in order to minimize voids, cracks, and peeling associated with the thermal shock of placing a room temperature substrate into a high temperature annealing chamber. The preheating process is generally conducted in a fluid processing cell, and more particularly, in an SRD cell positioned on the processing platform, wherein the SRD cell is configured to dispense a heated fluid onto the substrate to increase the temperature of the substrate prior to transferring the substrate to the anneal chamber.
- As noted above, a conventional ECP process includes plating a conductive layer onto a substrate, transferring to a bevel edge cleaning cell for bevel cleaning, transferring to a spin rinse dry cell for rinsing and/or cleaning and drying the substrate, and then transferring to an anneal chamber where the substrate is heated to stabilize the conductive layer. The present invention adds a substrate heating step into the spin rinse dry process. More particularly, a conventional substrate spin rinse dry process includes rotating the substrate at a rate of between about 10 rpm and about 500 rpm while a rinsing and/or cleaning solution is dispensed onto the top and/or bottom surfaces of the substrate. The rinsing fluid of the present invention is provided to the spin rinse dry cell at a temperature of between about 25° C. and about 100° C., or alternatively, between about 50° C. and about 100° C. or between about 75° C. and 100° C. The heated rinsing fluid may be applied to the front and/or backside of the substrate while the substrate is rotated. The fluid contacts the substrate surface and transfers heat from the fluid to the substrate, thus heating the substrate to a temperature near the temperature of the rinsing fluid. The heated rinsing fluid may be dispensed onto the substrate until the substrate surfaces are sufficiently clean and the substrate is heated to the desired temperature. In one embodiment of the invention, deionized water at a temperature of between about 50° C. and about 100° C. is dispensed onto the substrate surface while the substrate is rotated. The heated deionized water is dispensed for between about 5 seconds and about 20 seconds before the flow of the heated water is terminated and a drying process is initiated.
- Once the rinsing process is completed, the flow of the rinsing fluid is terminated, and the substrate may be rotated at a higher rotation rate to dry the substrate. For example, the substrate may be rotated at between about 500 rpm and about 3000 rpm for between about 10 seconds and about 60 seconds to dry the substrate, or alternatively, between about 5 seconds and about 25 seconds. The higher rotation speed of the substrate generates a centrifugal force sufficient to urge fluid outward and off of the surfaces of the substrate, thus drying the substrate. In the present invention, it is desirable to spin the substrate at between about 2000 rpm and about 3000 rpm during the drying process so that the drying time is minimized, as an extended drying time has been shown to decrease the substrate temperature. Therefore, once the substrate is heated with the heated rinsing fluid, embodiments of the invention are configured to minimize delay and transfer the substrate to the annealing chamber as soon as practicable.
- Once the drying process is completed, the substrate is transferred to the annealing chamber. In the system illustrated in
FIG. 1 , for example, the substrate may be transferred fromSRD cell annealing chamber 135 byrobot 132. Embodiments of the invention contemplate that the timeframe for transfer of the substrate from theSRD cell anneal chamber 135 is less than about 30 seconds, and more particularly, less than about 15 seconds. Further, embodiments of the invention contemplate that the timeframe between the time that the heated rinsing fluid is terminated and the time that the substrate is positioned in theanneal chamber 135 may be less than about 90 seconds, or more particularly, between about 20 seconds and about 60 seconds. The transfer time between the rinsing cell and the annealing station is critical to the invention, as longer transfer times allow the substrate to cool between the heated rinsing and the annealing stages of the process, which increases the thermal shock and stress on the substrate. Once the substrate is positioned in theannealing chamber 135, the temperature of the substrate may be increased to between about 150° C. and about 450° C., between about 200° C. and 400° C., or up to about 450° C.
Claims (20)
1. A method for processing a substrate, comprising:
plating a conductive layer onto a substrate;
transferring the substrate from a plating cell to a cleaning cell;
heating the substrate in the cleaning cell;
transferring the substrate from the cleaning cell to an annealing station; and
annealing the substrate at the annealing station at a temperature of between about 150° C. and about 450° C.
2. The method of claim 1 , wherein heating the substrate comprises applying a rinsing solution having a temperature of between about 50° C. and about 100° C.
3. The method of claim 1 , wherein heating the substrate comprises applying a rinsing solution having a temperature of between about 75° C. and about 100° C. and drying the substrate in the cleaning cell.
4. The method of claim 3 , further comprising rotating the substrate at a rate of between about 10 rpm and 500 rpm.
5. The method of claim 1 , wherein heating the substrate comprises radiating the substrate while a rinsing fluid is dispensed thereon.
6. The method of claim 1 , wherein a timeframe between drying the substrate and annealing the substrate is between about 20 seconds and about 60 seconds.
7. The method of claim 1 , wherein a duration of the drying is between about 5 seconds and about 25 seconds.
8. A method of processing a substrate, comprising:
plating a conductive layer onto a substrate;
rinsing the substrate of unwanted residue chemicals;
preheating the substrate during the rinsing process to a temperature of between about 50° C. and about 100° C.; and
annealing the substrate at an annealing station at a temperature of between about 150° C. and about 450° C. subsequent to the preheating process.
9. The method of claim 8 , wherein rinsing and preheating are conducted in a spin rinse dry cell.
10. The method of claim 9 , wherein heating comprises dispensing a heated rinsing solution onto the substrate.
11. The method of claim 10 , wherein the heated rising solution comprises deionized water at a temperature of between about 50° C. and about 100° C.
12. The method of claim 9 , further comprising transferring the substrate from the spin rinse dry cell to the annealing station when the preheating is finished, the transferring process having a duration of between about 20 seconds and about 60 seconds.
13. The method of claim 8 , wherein preheating the substrate comprises applying radiant heat to the substrate during the rinsing.
14. The method of claim 8 , wherein the rinsing and preheating steps are conducted simultaneously.
15. The method of claim 8 , further comprising controlling a temperature of a rinsing fluid to remain at a constant temperature.
16. The method of claim 15 , further comprising reading a temperature of a heated solution with a thermocouple and controlling a heater positioned in communication with the rinsing solution in accordance with a temperature indicated by the thermocouple.
17. An apparatus for processing a substrate, comprising:
a plating cell positioned on a processing platform, the plating cell being configured to plate a conductive layer onto the substrate;
a rinsing cell positioned on the processing platform, the rinsing cell comprising:
a substrate support member configured to support the substrate for processing;
a fluid dispensing nozzle positioned to dispense a rinsing solution onto the substrate; and
a fluid heating assembly positioned in fluid communication with the fluid dispensing nozzle, the fluid heating assembly being configured to supply a heated rinsing solution at a temperature of between about 50° C. and about 100° C.; and
a substrate annealing station positioned in communication with the processing platform.
18. The apparatus of claim 17 , wherein the rinsing cell is configured to dispense the heated rinsing solution onto the substrate during a spin rinse dry process.
19. The apparatus of claim 18 , further comprising a substrate transfer robot positioned on the processing platform, the substrate transfer robot being configured to transfer the substrate from the rinsing cell to the annealing station in less than about 15 seconds.
20. The apparatus of claim 18 , wherein the substrate heating assembly comprises a fluid tank having a controllable heating element therein, the heating element being configured to maintain fluid in the tank at a predetermined temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US10/774,194 US20050173253A1 (en) | 2004-02-05 | 2004-02-05 | Method and apparatus for infilm defect reduction for electrochemical copper deposition |
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US20110104396A1 (en) * | 2009-11-05 | 2011-05-05 | The Trustees Of Columbia University In The City Of New York | Substrate laser oxide removal process followed by electro or immersion plating |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
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