CN1610969B - 外围晶体管的金属化触点形成方法 - Google Patents

外围晶体管的金属化触点形成方法 Download PDF

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Publication number
CN1610969B
CN1610969B CN028265254A CN02826525A CN1610969B CN 1610969 B CN1610969 B CN 1610969B CN 028265254 A CN028265254 A CN 028265254A CN 02826525 A CN02826525 A CN 02826525A CN 1610969 B CN1610969 B CN 1610969B
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China
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plug
insulating barrier
capacitor
transistor
conduction type
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Expired - Lifetime
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CN028265254A
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English (en)
Chinese (zh)
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CN1610969A (zh
Inventor
R·H·莱恩
T·麦克丹尼
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN028265254A 2001-11-07 2002-11-06 外围晶体管的金属化触点形成方法 Expired - Lifetime CN1610969B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/986,167 US6794238B2 (en) 2001-11-07 2001-11-07 Process for forming metallized contacts to periphery transistors
US09/986,167 2001-11-07
PCT/US2002/035425 WO2003041127A2 (en) 2001-11-07 2002-11-06 Process for forming metallized contacts to periphery transistors

Publications (2)

Publication Number Publication Date
CN1610969A CN1610969A (zh) 2005-04-27
CN1610969B true CN1610969B (zh) 2010-04-28

Family

ID=25532149

Family Applications (1)

Application Number Title Priority Date Filing Date
CN028265254A Expired - Lifetime CN1610969B (zh) 2001-11-07 2002-11-06 外围晶体管的金属化触点形成方法

Country Status (7)

Country Link
US (2) US6794238B2 (enExample)
EP (1) EP1442474A2 (enExample)
JP (1) JP2005509288A (enExample)
KR (1) KR100529769B1 (enExample)
CN (1) CN1610969B (enExample)
AU (1) AU2002348172A1 (enExample)
WO (1) WO2003041127A2 (enExample)

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WO2001080318A1 (fr) * 2000-04-14 2001-10-25 Fujitsu Limited Dispositif semi-conducteur et procede de fabrication
US6794238B2 (en) * 2001-11-07 2004-09-21 Micron Technology, Inc. Process for forming metallized contacts to periphery transistors
FR2832854B1 (fr) * 2001-11-28 2004-03-12 St Microelectronics Sa Fabrication de memoire dram et de transistor mos
JP2004128395A (ja) * 2002-10-07 2004-04-22 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
TW583754B (en) * 2002-12-02 2004-04-11 Nanya Technology Corp Bitline structure for DRAMs and method of fabricating the same
US7476945B2 (en) * 2004-03-17 2009-01-13 Sanyo Electric Co., Ltd. Memory having reduced memory cell size
KR101054341B1 (ko) * 2004-04-30 2011-08-04 삼성전자주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR100626378B1 (ko) * 2004-06-25 2006-09-20 삼성전자주식회사 반도체 장치의 배선 구조체 및 그 형성 방법
US7772108B2 (en) * 2004-06-25 2010-08-10 Samsung Electronics Co., Ltd. Interconnection structures for semiconductor devices and methods of forming the same
KR100653701B1 (ko) * 2004-08-20 2006-12-04 삼성전자주식회사 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법
US7605033B2 (en) * 2004-09-01 2009-10-20 Micron Technology, Inc. Low resistance peripheral local interconnect contacts with selective wet strip of titanium
US7445996B2 (en) * 2005-03-08 2008-11-04 Micron Technology, Inc. Low resistance peripheral contacts while maintaining DRAM array integrity
US7859112B2 (en) * 2006-01-13 2010-12-28 Micron Technology, Inc. Additional metal routing in semiconductor devices
JP4573784B2 (ja) * 2006-03-08 2010-11-04 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP2012089744A (ja) * 2010-10-21 2012-05-10 Elpida Memory Inc 半導体装置の製造方法
KR102235612B1 (ko) 2015-01-29 2021-04-02 삼성전자주식회사 일-함수 금속을 갖는 반도체 소자 및 그 형성 방법
CN106298788B (zh) * 2015-06-12 2019-07-02 中芯国际集成电路制造(上海)有限公司 存储器结构及其形成方法
US10109674B2 (en) 2015-08-10 2018-10-23 Qualcomm Incorporated Semiconductor metallization structure
KR102634947B1 (ko) 2016-08-18 2024-02-07 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
EP3507808B1 (en) 2016-08-31 2024-12-11 Micron Technology, Inc. Memory arrays
US10355002B2 (en) 2016-08-31 2019-07-16 Micron Technology, Inc. Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
US10115438B2 (en) 2016-08-31 2018-10-30 Micron Technology, Inc. Sense amplifier constructions
WO2018044456A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
WO2018044454A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
WO2018044457A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
WO2018044453A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory cells and memory arrays
WO2018132250A1 (en) 2017-01-12 2018-07-19 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
WO2019021098A1 (en) * 2017-07-26 2019-01-31 Semiconductor Energy Laboratory Co., Ltd. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
CN109427786B (zh) * 2017-08-21 2021-08-17 联华电子股份有限公司 半导体存储装置及其制作工艺
EP3676835A4 (en) 2017-08-29 2020-08-19 Micron Technology, Inc. MEMORY CIRCUITS
US10964590B2 (en) * 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US10566334B2 (en) * 2018-05-11 2020-02-18 Micron Technology, Inc. Methods used in forming integrated circuitry including forming first, second, and third contact openings
KR102775519B1 (ko) * 2019-03-26 2025-03-06 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조방법
EP4024456A4 (en) 2020-08-14 2023-01-04 Changxin Memory Technologies, Inc. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE THEREOF
CN114078778B (zh) * 2020-08-14 2024-07-23 长鑫存储技术有限公司 半导体结构及其制备方法

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US5689126A (en) * 1994-07-07 1997-11-18 Nec Corporation Semiconductor memory device having stacked capacitor
US5858831A (en) * 1998-02-27 1999-01-12 Vanguard International Semiconductor Corporation Process for fabricating a high performance logic and embedded dram devices on a single semiconductor chip
US5893734A (en) * 1998-09-14 1999-04-13 Vanguard International Semiconductor Corporation Method for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contacts
CN1230784A (zh) * 1998-03-26 1999-10-06 三星电子株式会社 具有高介电常数介质层的半导体器件电容器的制造方法
US6008084A (en) * 1998-02-27 1999-12-28 Vanguard International Semiconductor Corporation Method for fabricating low resistance bit line structures, along with bit line structures exhibiting low bit line to bit line coupling capacitance
US6294426B1 (en) * 2001-01-19 2001-09-25 Taiwan Semiconductor Manufacturing Company Method of fabricating a capacitor under bit line structure with increased capacitance without increasing the aspect ratio for a dry etched bit line contact hole

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JP3701469B2 (ja) * 1998-06-12 2005-09-28 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
KR100276390B1 (ko) * 1998-08-10 2000-12-15 윤종용 반도체 메모리 장치 및 그의 제조 방법
FR2800199B1 (fr) 1999-10-21 2002-03-01 St Microelectronics Sa Fabrication de memoire dram
US6534809B2 (en) * 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6436763B1 (en) * 2000-02-07 2002-08-20 Taiwan Semiconductor Manufacturing Company Process for making embedded DRAM circuits having capacitor under bit-line (CUB)
US6794238B2 (en) * 2001-11-07 2004-09-21 Micron Technology, Inc. Process for forming metallized contacts to periphery transistors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5689126A (en) * 1994-07-07 1997-11-18 Nec Corporation Semiconductor memory device having stacked capacitor
US5858831A (en) * 1998-02-27 1999-01-12 Vanguard International Semiconductor Corporation Process for fabricating a high performance logic and embedded dram devices on a single semiconductor chip
US6008084A (en) * 1998-02-27 1999-12-28 Vanguard International Semiconductor Corporation Method for fabricating low resistance bit line structures, along with bit line structures exhibiting low bit line to bit line coupling capacitance
CN1230784A (zh) * 1998-03-26 1999-10-06 三星电子株式会社 具有高介电常数介质层的半导体器件电容器的制造方法
US5893734A (en) * 1998-09-14 1999-04-13 Vanguard International Semiconductor Corporation Method for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contacts
US6294426B1 (en) * 2001-01-19 2001-09-25 Taiwan Semiconductor Manufacturing Company Method of fabricating a capacitor under bit line structure with increased capacitance without increasing the aspect ratio for a dry etched bit line contact hole

Also Published As

Publication number Publication date
WO2003041127B1 (en) 2004-05-13
KR100529769B1 (ko) 2005-11-17
US6794238B2 (en) 2004-09-21
CN1610969A (zh) 2005-04-27
WO2003041127A2 (en) 2003-05-15
JP2005509288A (ja) 2005-04-07
US20030183822A1 (en) 2003-10-02
KR20040064274A (ko) 2004-07-16
EP1442474A2 (en) 2004-08-04
WO2003041127A3 (en) 2003-10-02
US6784501B2 (en) 2004-08-31
AU2002348172A1 (en) 2003-05-19
US20030087499A1 (en) 2003-05-08

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