AU2002348172A1 - Process for forming metallized contacts to periphery transistors - Google Patents

Process for forming metallized contacts to periphery transistors

Info

Publication number
AU2002348172A1
AU2002348172A1 AU2002348172A AU2002348172A AU2002348172A1 AU 2002348172 A1 AU2002348172 A1 AU 2002348172A1 AU 2002348172 A AU2002348172 A AU 2002348172A AU 2002348172 A AU2002348172 A AU 2002348172A AU 2002348172 A1 AU2002348172 A1 AU 2002348172A1
Authority
AU
Australia
Prior art keywords
metallized contacts
periphery transistors
forming metallized
transistors
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002348172A
Other languages
English (en)
Inventor
Richard H. Lane
Terry Mcdaniel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2002348172A1 publication Critical patent/AU2002348172A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2002348172A 2001-11-07 2002-11-06 Process for forming metallized contacts to periphery transistors Abandoned AU2002348172A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/986,167 2001-11-07
US09/986,167 US6794238B2 (en) 2001-11-07 2001-11-07 Process for forming metallized contacts to periphery transistors
PCT/US2002/035425 WO2003041127A2 (en) 2001-11-07 2002-11-06 Process for forming metallized contacts to periphery transistors

Publications (1)

Publication Number Publication Date
AU2002348172A1 true AU2002348172A1 (en) 2003-05-19

Family

ID=25532149

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002348172A Abandoned AU2002348172A1 (en) 2001-11-07 2002-11-06 Process for forming metallized contacts to periphery transistors

Country Status (7)

Country Link
US (2) US6794238B2 (enExample)
EP (1) EP1442474A2 (enExample)
JP (1) JP2005509288A (enExample)
KR (1) KR100529769B1 (enExample)
CN (1) CN1610969B (enExample)
AU (1) AU2002348172A1 (enExample)
WO (1) WO2003041127A2 (enExample)

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JP4335490B2 (ja) * 2000-04-14 2009-09-30 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
US6794238B2 (en) * 2001-11-07 2004-09-21 Micron Technology, Inc. Process for forming metallized contacts to periphery transistors
FR2832854B1 (fr) * 2001-11-28 2004-03-12 St Microelectronics Sa Fabrication de memoire dram et de transistor mos
JP2004128395A (ja) * 2002-10-07 2004-04-22 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
TW583754B (en) * 2002-12-02 2004-04-11 Nanya Technology Corp Bitline structure for DRAMs and method of fabricating the same
US7476945B2 (en) * 2004-03-17 2009-01-13 Sanyo Electric Co., Ltd. Memory having reduced memory cell size
KR101054341B1 (ko) * 2004-04-30 2011-08-04 삼성전자주식회사 유기 발광 표시 장치 및 이의 제조 방법
US7772108B2 (en) * 2004-06-25 2010-08-10 Samsung Electronics Co., Ltd. Interconnection structures for semiconductor devices and methods of forming the same
KR100626378B1 (ko) * 2004-06-25 2006-09-20 삼성전자주식회사 반도체 장치의 배선 구조체 및 그 형성 방법
KR100653701B1 (ko) * 2004-08-20 2006-12-04 삼성전자주식회사 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법
US7605033B2 (en) * 2004-09-01 2009-10-20 Micron Technology, Inc. Low resistance peripheral local interconnect contacts with selective wet strip of titanium
US7445996B2 (en) 2005-03-08 2008-11-04 Micron Technology, Inc. Low resistance peripheral contacts while maintaining DRAM array integrity
US7859112B2 (en) * 2006-01-13 2010-12-28 Micron Technology, Inc. Additional metal routing in semiconductor devices
JP4573784B2 (ja) * 2006-03-08 2010-11-04 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP2012089744A (ja) * 2010-10-21 2012-05-10 Elpida Memory Inc 半導体装置の製造方法
KR102235612B1 (ko) 2015-01-29 2021-04-02 삼성전자주식회사 일-함수 금속을 갖는 반도체 소자 및 그 형성 방법
CN106298788B (zh) * 2015-06-12 2019-07-02 中芯国际集成电路制造(上海)有限公司 存储器结构及其形成方法
US10109674B2 (en) 2015-08-10 2018-10-23 Qualcomm Incorporated Semiconductor metallization structure
KR102634947B1 (ko) 2016-08-18 2024-02-07 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
KR102134532B1 (ko) 2016-08-31 2020-07-20 마이크론 테크놀로지, 인크 메모리 셀들 및 메모리 어레이들
WO2018044458A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Memory arrays
US10355002B2 (en) 2016-08-31 2019-07-16 Micron Technology, Inc. Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
EP3507830A4 (en) 2016-08-31 2020-04-01 Micron Technology, Inc. MEMORY CELLS AND MEMORY MATRICES
US10115438B2 (en) 2016-08-31 2018-10-30 Micron Technology, Inc. Sense amplifier constructions
KR102171724B1 (ko) 2016-08-31 2020-10-30 마이크론 테크놀로지, 인크 메모리 셀 및 메모리 어레이
US10157926B2 (en) 2016-08-31 2018-12-18 Micron Technology, Inc. Memory cells and memory arrays
WO2018132250A1 (en) 2017-01-12 2018-07-19 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
KR102637403B1 (ko) * 2017-07-26 2024-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN109427786B (zh) * 2017-08-21 2021-08-17 联华电子股份有限公司 半导体存储装置及其制作工艺
WO2019045882A1 (en) 2017-08-29 2019-03-07 Micron Technology, Inc. MEMORY CIRCUITS
US10964590B2 (en) * 2017-11-15 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Contact metallization process
US10566334B2 (en) * 2018-05-11 2020-02-18 Micron Technology, Inc. Methods used in forming integrated circuitry including forming first, second, and third contact openings
KR102775519B1 (ko) * 2019-03-26 2025-03-06 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 제조방법
JP7513720B2 (ja) * 2020-08-14 2024-07-09 チャンシン メモリー テクノロジーズ インコーポレイテッド 半導体構造及びその製造方法
CN114078778B (zh) * 2020-08-14 2024-07-23 长鑫存储技术有限公司 半导体结构及其制备方法
US12260928B2 (en) * 2022-02-25 2025-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices with backside boost capacitor and methods for forming the same

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Publication number Priority date Publication date Assignee Title
JP2682455B2 (ja) 1994-07-07 1997-11-26 日本電気株式会社 半導体記憶装置およびその製造方法
US5858831A (en) 1998-02-27 1999-01-12 Vanguard International Semiconductor Corporation Process for fabricating a high performance logic and embedded dram devices on a single semiconductor chip
US6008084A (en) * 1998-02-27 1999-12-28 Vanguard International Semiconductor Corporation Method for fabricating low resistance bit line structures, along with bit line structures exhibiting low bit line to bit line coupling capacitance
KR100284737B1 (ko) * 1998-03-26 2001-03-15 윤종용 고유전율의유전막을갖는반도체장치의커패시터제조방법
JP3701469B2 (ja) * 1998-06-12 2005-09-28 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
KR100276390B1 (ko) * 1998-08-10 2000-12-15 윤종용 반도체 메모리 장치 및 그의 제조 방법
US5893734A (en) * 1998-09-14 1999-04-13 Vanguard International Semiconductor Corporation Method for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contacts
FR2800199B1 (fr) 1999-10-21 2002-03-01 St Microelectronics Sa Fabrication de memoire dram
US6534809B2 (en) * 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6436763B1 (en) * 2000-02-07 2002-08-20 Taiwan Semiconductor Manufacturing Company Process for making embedded DRAM circuits having capacitor under bit-line (CUB)
US6294426B1 (en) * 2001-01-19 2001-09-25 Taiwan Semiconductor Manufacturing Company Method of fabricating a capacitor under bit line structure with increased capacitance without increasing the aspect ratio for a dry etched bit line contact hole
US6794238B2 (en) * 2001-11-07 2004-09-21 Micron Technology, Inc. Process for forming metallized contacts to periphery transistors

Also Published As

Publication number Publication date
JP2005509288A (ja) 2005-04-07
CN1610969A (zh) 2005-04-27
CN1610969B (zh) 2010-04-28
US6784501B2 (en) 2004-08-31
US6794238B2 (en) 2004-09-21
KR20040064274A (ko) 2004-07-16
US20030087499A1 (en) 2003-05-08
WO2003041127B1 (en) 2004-05-13
EP1442474A2 (en) 2004-08-04
US20030183822A1 (en) 2003-10-02
WO2003041127A3 (en) 2003-10-02
KR100529769B1 (ko) 2005-11-17
WO2003041127A2 (en) 2003-05-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase