CN1591809A - 半导体装置制造用粘合片 - Google Patents

半导体装置制造用粘合片 Download PDF

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Publication number
CN1591809A
CN1591809A CNA2004100579434A CN200410057943A CN1591809A CN 1591809 A CN1591809 A CN 1591809A CN A2004100579434 A CNA2004100579434 A CN A2004100579434A CN 200410057943 A CN200410057943 A CN 200410057943A CN 1591809 A CN1591809 A CN 1591809A
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Prior art keywords
semiconductor device
bonding sheet
adhesive phase
semiconductor element
adhesive
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CNA2004100579434A
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CN100559560C (zh
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细川和人
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Nitto Denko Corp
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Nitto Denko Corp
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Abstract

一种半导体装置制造用粘合片，在具有基体材料层(32)和粘合剂层(31)的粘合片(30)中的该粘合剂层(31)上，至少用密封树脂对与导体相连的半导体元件进行密封的半导体装置的制造工序中使用，其特征在于，所述粘合片(30)的粘合剂层(31)中含有橡胶成分和环氧树脂成分，且橡胶成分在粘合剂层的有机物中所占比例为5－40重量％。根据本发明可以提供不存在由硅酮成分产生的污染且在高温下也可以保持充分的弹性模数而且不易产生残余浆料问题的半导体装置制造用粘合片。

Description

半导体装置制造用粘合片
技术领域
本发明涉及在具有基体材料层和粘合剂层的粘合片中的该粘合剂层上，至少用密封树脂对与导体相连的半导体元件进行密封的半导体装置的制造工序中使用的粘合片。
背景技术
近年来，在LSI的安装技术中，CSP(Chip on Size/Scale Package)技术引人注目。在该技术中，以QFN(Quad Flat Non-leadaed Package)为代表的引脚被引入于封装内部的形式的封装，是在小型化和高集成方面特别引人注目的封装形式之一。在这种QFN的制造方法中，近年来还特别引人注目的是，将多个QFN用芯片整齐地排列在引线框的封装图形区域的裸片焊垫上，在金属模的模穴内用密封树脂一齐密封后，通过切割而切分为单独的QFN构造物，从而使每个引线框面积上的半导体元件的生产率得到显著改善的制造方法。
在这种将多个半导体芯片分批密封的QFN的制造方法中，被树脂密封时的模压金属模所夹紧的区域，只是比封装图形区域更向外侧扩展的、树脂密封区域的外侧。因此，在封装图形区域、特别是在其中央部分，无法用足够的压力将外部引线面压在模压金属模上，从而很难抑制密封树脂漏到外部引线侧的现象，容易发生QFN端子等被树脂覆盖的问题。
因此，就如上所述的QFN的制造方法，还提出了下述的制造方法，即，在引线框的外部引线侧贴上粘合带，通过基于该粘合带的自粘合力(masking)的密封效果，防止树脂密封时树脂漏到外部引线侧的制造方法(例如，参照特开2002-110884号公报)。
在这种制造方法中，耐热性粘合带最好在最初的阶段被贴在引线框的外部焊垫面上，之后，经半导体芯片的装配工序和引线接合工序，一直贴合到利用密封树脂的密封工序。因此，作为耐热性粘合带，不仅要求其能防止密封树脂的漏出，而且要求具备耐于半导体芯片的装配工序的高耐热性和对引线接合工序中的精细的操作性不会带来影响且在密封工序结束后可以很好地完成剥离并不会留下剩余浆料的、可以满足于这些所有工序的特性。
另外，近年还公开了为了更加薄型化在粘合带上贴合铜箔后进行蚀刻而形成导体的所谓无引线半导体装置制造方法(例如，参照特开平9-252014号公报)。在该方法中，由于在粘合带上形成导体，所以使导体可以薄型化，而且，当使由密封树脂成形的半导体装置分别成片时，由于不需要切断引线框，所以切割时的刀片的磨损等也较少。
作为用于这种用途的粘合带的特性，与使用引线框的情况相同，不仅要求能防止密封树脂的漏出，而且要求具备耐于半导体芯片的装配工序的高耐热性和对引线接合工序中的精细的操作性不会带来影响且在密封工序结束后可以很好地完成剥离并不会留下剩余浆料的、可以满足于这些所有工序的特性。
作为具有如上所述特性的耐热性粘合带，一般使用的是硅酮类粘合剂，这是因为此种粘合剂具有良好的耐热性和适度的弹性模数和粘合力。
但是，已知在耐热性粘合带上使用硅酮类粘合剂时，会产生如下的问题。即，耐热性粘合带的硅酮类粘合剂在经上述一系列的工序后剥离时，由于移向外部焊垫部分而污染该表面，其结果，在安装基板上焊半导体装置时润湿性差，从而会产生安装的合格率下降的问题。另外，为了在引线接合工序中获得引线和引脚焊垫的良好的金属接合，有时会在200℃附近进行加热，但是当使用硅酮类粘合带时，由于产生硅氧烷气体，会污染引线垫表面，而且因弹性模数的下降，会导致引线接合性下降的问题。
另外，如在上述的特开平9-252014号公报中所示，当在无引线的制作工序中使用时，在蚀刻工序、镀覆工序的湿式工艺中硅酮类粘合剂会暴露在药液中，所洗提出的硅酮成分会污染表面，导致引线接合性的下降。
发明内容
本发明的目的在于提供一种不会由硅酮成分造成污染且在高温下也可以保持足够的弹性模数并且不易产生剩余浆料问题的半导体装置制造用粘合片。
本发明人等为实现上述目的进行了钻心研究，结果发现，通过使用特定的橡胶/环氧类粘合剂，可以在固化后具有高耐热性，而且，对金属具有适度的接合性，在密封工序之后也可以良好地从密封树脂和外部垫板剥离，不会留下残余浆料，而且不用担心硅酮的污染，从而完成了本发明。
即，本发明的半导体装置制造用粘合片，在具有基体材料层和粘合剂层的粘合片中的该粘合剂层上，至少用密封树脂对与导体相连的半导体元件进行密封的半导体装置的制造工序中使用，其特征在于，所述粘合片的粘合剂层中含有橡胶成分和环氧树脂成分，且橡胶成分在粘合剂层的有机物中所占比例为5-40重量％。
根据本发明，由于不含有硅酮成分，所以没有由逸出气体和洗提产生的污染，如实施例的结果所示，即使在高温下也可以保持足够的弹性模数，还不易产生剩余浆料的问题。另外，由于适当地含有橡胶成分，可以保持耐热性，同时可以赋予粘合剂柔软性，从而可以使切割粘合片等时的加工性得到改善。
在上述中，上述环氧树脂成分的环氧当量优选在1000g/eq以下。由此，可以使交联密度变得适度，在剥离时更不易产生剩余浆料的问题。
另外，上述粘合剂层在固化后的、200℃下的拉伸储藏弹性模数优选在1MPa以上。因此，即使在高温下也可以更可靠地维持充分的弹性模数，提高引线接合的合格率。
附图说明
本发明的其它的目的、特征和优点将通过以下所示的记载进行充分的解释。另外，通过参照附图所进行的以下说明，可更加清楚地了解本发明的优点。
图1是本发明的半导体装置制造用粘合片的截面图。
图2A和2B是在本发明的半导体装置的制造方法(Ia)中使用的引线框的一个例子。
图3A-3C是本发明的半导体装置的制造方法(Ia)的工序示意图。
图4A-4E是本发明的半导体装置的制造方法(Ib)的工序示意图。
图5A-5C是在本发明的半导体装置的制造方法(Ib)中使用的引线框的一个例子。
图6是表示本发明的半导体装置的制造方法(Ib)的树脂密封工序的一个例子的截面图。
图7是由本发明的半导体装置的制造方法(II)得到的半导体装置的截面图。
图8是由本发明的半导体装置的制造方法(III)得到的半导体装置的截面图。
图9A-9H是本发明的半导体装置的制造方法(III)的工序示意图。
图10是由本发明的半导体装置的制造方法(III)得到的半导体装置的俯视示意图。
图11A-11H是在本发明的半导体装置的制造方法(III)中工序(1)的另一个例子。
图12A和12B是表示在本发明的半导体装置的制造方法(III)中通过工序(1)在粘合片上形成了导电部的状态的俯视图。
具体实施方式
下面，参照附图对本发明的半导体装置制造用粘合片和半导体装置的实施方式进行具体说明。首先，说明本发明的半导体装置制造用粘合片。在图1中，示出了其截面图。如图1中所示，本发明的半导体装置制造用粘合片30，具有基体材料层32和粘合剂层31。粘合剂层31含有橡胶成分和环氧树脂成分。
作为使用的橡胶成分，可以举例为NBR(丙烯腈丁二烯橡胶)、丙烯酸橡胶、酸性端基丁腈橡胶、热塑性弹性体等以往在环氧类粘合剂中使用的物质，作为市售品可以举例为Nipol1072(日本ゼォン(株)社制)、Nipol-AR51(日本ゼォン(株)社制)等。其中，从与环氧树脂的相溶性的观点出发，优选使用NBR，作为丙烯腈量特别优选10-50％。
橡胶成分是为了赋予粘合剂柔软性而加入的，但是如果含量变多，耐热性会下降。从该观点来看，橡胶成分在粘合剂层的有机物中所占的比例优选为5-40重量％，更优选为10-30重量％。如果少于5重量％，则粘合剂层的柔软性会下降，切割粘合片时的加工性等会变差，如果多于40重量％，则会导致耐热性的下降并容易产生残余浆料。
环氧树脂成分，是在分子内含有两个以上的环氧基的化合物，可以举例为缩水甘油基胺型环氧树脂、双酚F型环氧树脂、双酚A型环氧树脂、苯酚酚醛清漆树脂型环氧树脂、甲酚酚醛清漆树脂型环氧树脂、联苯型环氧树脂、萘型环氧树脂、脂肪族环氧树脂、脂环族环氧树脂、杂环式环氧树脂、含有螺环的环氧树脂、卤化环氧树脂等，可以单独或者二种以上混合使用。其中，从在密封工序后与密封树脂的剥离性的观点出发，优选双酚A型环氧树脂。
相对于有机物，这些物质的使用比例优选为60-95重量％，更优选为70-90重量％。如果少于60重量％，则固化不充分而且耐热性不足，而如果多于95重量％，则柔软性会下降，导致加工性变差。另外，环氧树脂的环氧当量在1000g/eq以下，优选500g/eq以下。如果环氧当量大于1000g/eq，则交联密度会变小，固化后的粘合强度将会变大，在密封工序后剥离时易于产生残余浆料。
另外，优选在本发明中加入用于使作为固化成分的环氧树脂固化的固化剂。作为环氧树脂固化剂，可以使用酚醛树脂、各种咪唑类化合物及其衍生物、酰肼化合物、双氰胺以及使这些微胶囊化的物质。特别是，当把酚醛树脂作为固化剂时，还可以使用三苯基膦等磷类化合物等作为固化促进剂。
这种固化剂的使用比例，当选择酚醛树脂作为固化剂时，可以将环氧树脂的一部分置换为酚醛树脂，以使酚醛树脂量达到与环氧树脂大致相等的当量。其它的固化剂和固化促进剂的使用比例相对于有机物为0.5-5重量％，优选为0.5-3重量％。
调节为上述范围的本发明的热固化性的粘合剂层固化后在200℃下的拉伸储藏弹性模数优选为1MPa以上，更优选为1.5MPa以上。如果小于1MPa，则会导致引线接合性的下降，并且密封工序后剥离时易于产生残余浆料。还有，关于拉伸储藏弹性模数的测量方法在后面进行说明。
另外，本发明的热固化性粘合片在200℃下由加热产生的硅氧烷类的气体产生量为1000ng/g以下，优选500ng/g以下，更优选为100ng/g以下。如果多于1000ng/g，则因对表面的硅酮污染、硅酮成分向外部焊垫侧的转印等有可能在引线接合时和软钎焊时引起金属接合不良。
此外，在粘合剂层中，在不影响粘合片的各种特性的范围内，可以根据需要加入无机填充剂、有机填充剂、颜料、抗老化剂、硅烷偶合剂、增粘剂等公知的各种添加剂。抗老化剂的加入在防止高温下的劣化方面特别有效。
在本发明中，可以用如上所述地调制的组合物，通过一般的制造方法制作成粘合片。即，可以举例为溶解在溶剂中之后，向基体材料薄膜涂敷并加热干燥形成粘合片的方法；把组合物作成水类分散溶液之后，向基体材料薄膜涂敷并加热干燥形成粘合片的方法。在这里，作为溶剂，没有特别限制，优选的是溶解性良好的甲乙酮等酮类溶剂。
作为基体材料层32，优选耐热性基体材料，例如包括聚酯、聚酰胺、聚苯硫醚、聚醚酰亚胺、聚酰亚胺等塑料基体材料及其多孔质基体材料；透明玻璃纸、优质纸(不含磨木浆的纸)、日本纸等纸基体材料；纤维素、聚酰胺、聚酯、芳族聚酰胺等无纺布基体材料；铝箔、SUS箔、Ni箔等金属薄膜基体材料等。
作为基体材料的厚度，通常为10-200μm，优选为25-100μm。如果薄于10μm，则操作性会下降，而如果厚于200μm，则成本将会增加。本发明的半导体装置制造工序用粘合片是，在基体材料层上设置如上所述地制造的厚度通常为1-50μm的粘合剂层而形成的，可作成片状和带状等使用。
另外，在粘合片30上，可以根据需要设置抗静电性能。在图1中示出了在粘合片30上赋予抗静电性能的方法。作为赋予抗静电性能的方法，可以举例为将抗静电剂、导电性填料与粘合剂层31、基体材料层32混合的方法。还可以举例为在基体材料层32和粘合剂层31的界面33或基体材料层32的背面34上涂敷抗静电剂的方法。根据该抗静电防止性能，可以抑制由半导体装置分离粘合片时产生的静电。作为抗静电剂，只要是具有所述抗静电性能的物质，就没有特别的限制。作为具体例子，例如，可以使用丙烯酸类两性表面活性剂、丙烯酸类阳离子表面活性剂、马来酸酐-苯乙烯类阴离子表面活性剂等表面活性剂等。
作为抗静电层用的材料，具体可以举例为ボンディップPA、ボンディップPX、ボンディップP(コニシ(株)制)等。另外，作为所述导电性填料，可以使用通用的物质，例如，可以列举为Ni、Fe、Cr、Co、Al、Sb、Mo、Cu、Ag、Pt、Au等金属、这些的合金或者氧化物、碳黑等碳等。这些可以单独或者组合二种以上使用。导电性填料可以是粉末状，也可以是纤维状。
由此构成的本发明的半导体装置制造工序用粘合片具有良好的耐热性，与密封树脂和金属的脱模性也良好，而且由于在粘合片中不含有硅酮成分，所以不容易产生由硅酮成分的表面污染导致的、软钎焊时的润湿性不良或引线接合工序时的接合不良的问题，可以适用于在粘合剂层上至少用密封树脂对与导体相连的半导体元件进行密封的半导体装置的制造工序中。具体地，可以用于如下的制作工序。
作为这种半导体装置的制造方法，可以举例为，例如使用引线框的半导体装置的制造方法(I)。在使用引线框的半导体装置的制造方法(I)中，在上述半导体装置制造用粘合片的粘合剂层上，层压具有在开口部分排列的导体部分的引线框，而且在将该导体部分和半导体元件连接的状态下，至少进行使用密封树脂的密封。在该半导体装置的制造方法(I)中，上述引线框可以用作在半导体装置制造用粘合片的粘合剂层上预先层压的引线框层压物。
参考图2A、2B和图3，对半导体装置的制造方法(I)的一个例子(Ia)进行说明。图2A和2B是表示引线框的例子的图，图2A是表示整体的立体图，图2B是表示其一个单元部分的俯视图。引线框121具有用于通过设置半导体元件102进行连接的开口121a，在该开口121a上排列有多个端子部分(导体部分)121b。引线框121中最好至少端子部分121b是导体部分，整体也可以为导体部分。
半导体元件102通过引线接合等与端子部分121b电连接，但是也可以在成为引线框层压物的状态下连接半导体元件102，另外也可以在成为层压物之前进行连接。因此，引线框层压物也包括预先与半导体元件102连接的结构。
端子部分121b的形状和排列没有特别的限制，并不限于矩形，也可以是图案化的形状和具有圆形部分的形状等。另外并不限于在开口121a的周围进行排列，也可以在开口121a的整个面上和对置的两个边上进行排列。
半导体装置的制造方法(Ia)中进行成形工序，其中使用在开口排列的端子部分为铜制的引线框，在将半导体元件与该端子部分连接的状态下进行树脂密封(参考图3A-3C)。
例如，通过将粘合片30粘附在用引线123在半导体元件102的电极和端子部分121b之间进行引线接合的引线框121上获得层压物。如图3A-3C中所示，使用该层压物配置成使半导体元件102位于下金属模103的模穴131内，用上金属模104闭模，接着通过传递模塑成形在模穴131内注入·固化树脂105，然后开模。根据需要，在粘着粘合片30的状态下在加热装置内进行PMC(后成型固化)工序。然后，剥离除去粘合片30。之后，还可以在端子部分121b上进行镀焊锡的镀覆工序。然后或者在到此为止的适当的时候，保留端子部分121b并通过修整切割引线框121。
另外，参考图4A-图6对半导体装置的制造方法(I)的一个例子(Ib)进行说明。图4A-4E是本发明的半导体装置的制造方法(Ib)的一个例子的工序图，是使用在引线框上预先贴合有粘合片的引线框层压物，至少进行半导体芯片的装配、连接和使用密封树脂的密封的图。如在图4A-4E中，示出了包括半导体芯片215的装配工序、用接合线216的连接工序、用密封树脂217的密封工序和切割密封的构造物21的切割工序的利用QFN的一齐密封的制造方法例。
装配工序如在图4A、4B中所示，是在外部焊垫侧(图的下侧)粘贴粘合片30的金属制的引线框210的裸片焊垫211c上接合半导体元件215的工序。
所谓引线框210是以铜等金属为原材料刻有QFN的端子图案的结构，而且在该电接点部分，有时也用银、镍、钯、金等原材料进行覆盖(镀覆)。
优选引线框210的每个QFN的配置图案整齐地排列，以便在以后的切割工序中易于切分。例如在图5A-5C中所示，在引线框210上纵横排列的矩阵状的形状等称为矩阵QFN或者MAP-QFN等，是最优选的引线框形状之一。
如在图5A、5B中所示，在引线框210的封装图形区域211上，整齐地排列有在相邻的多个开口211a上排列多个端子部分211b的QFN的基板图案。在一般的QFN的情况下，各个基板图案(在图5A中以格子划分的区域)由排列在开口211a的周围的在下侧具有外部焊垫面的端子部分211b、配置在开口211a的中央的裸片焊垫211c、和在开口211a的四个角上支撑裸片焊垫211c的裸片撑杆211d构成。
粘合片30优选至少贴在比包括开口211a和端子部分211b的封装图形区域211更靠外侧的部分，且贴在包括被树脂密封的树脂密封区域的外侧周围的区域。引线框210通常在端边附近具有用于在树脂密封时进行定位的定位销用孔213，优选贴在不会将该孔堵住的区域。另外，由于在引线框210的长度方向上设置有多个树脂密封区域，所以优选连续贴上粘合片30，以便使其覆盖多个区域。
在如上所述的引线框210上，装配半导体元件215、即作为半导体集成电路部分的硅片·芯片。在引线框210上设置有被称为裸片焊垫211c的固定区域，用于固定该半导体元件215，作为向该裸片焊垫211c接合(固定)的方法，可使用导电性膏219，或者也可采用使用粘合带、粘合剂等的各种方法。当使用导电性膏和热固化性的粘合剂进行芯片焊接时，通常在约150-200℃的温度下加热固化约30分钟～90分钟。
如图4C中所示，连接工序是用接合线216电连接引线框210的端子部分211b(内部引线)的顶端和半导体元件215上的电极焊垫215a的工序。作为接合线216，例如可使用金线或者铝线等。通常在加热到160-230℃的状态下，通过并用由超声波产生的振动能量和由施加压力产生的压接能量进行连接。此时，通过真空抽吸附着在引线框210上的粘合片30面，可以确实地固定在加热块上。
如图4D中所示，密封工序是用密封树脂217单面密封半导体芯片侧的工序。密封工序是为了保护装配在引线框210上的半导体元件215和接合线216而进行的，尤其典型的是使用以环氧类树脂为代表的密封树脂217在金属模中成形的方法。此时，如图6中所示，通常使用由具有多个模穴的上金属模218a和下金属模218b组成的金属模218，用多个密封树脂217同时进行密封工序。具体地讲，例如树脂密封时的加热温度是170-180℃，在该温度下固化数分钟之后再进行数小时后成型固化(post moldcure)。还有，优选在后成型固化之前剥离粘合片30。
如图4E中所示，切割工序是将密封的构造物221切割为单个的半导体装置221a的工序。通常可列举使用切割机等旋转切割刀切割密封树脂217的切割部分217a的切割工序。
贴合粘合片30和引线框210时，可以使用具有用夹持压力使两者粘合的夹持辊等的各种层压装置等。
还有，在上述的实施方式中，示出了利用QFN的一齐密封的制造方法的例子，但是制造方法(Ib)也可以是分别单独密封QFN的方法。此时，每个半导体芯片被设置在各个模穴内，并用密封树脂进行密封工序。另外在上述的实施方式中，示出了通过在裸片焊垫上的接合和引线接合进行半导体芯片的装配·连接的例子，但是可以根据封装的种类改变装配工序和连接工序，也可以同时进行装配和连接。
以上对使用引线框的半导体装置的制造方法(I)进行了说明，但是本发明的半导体装置制造用粘合片也可以适用于可薄型化的无引线结构的半导体装置的制造方法(II)、(III)。
半导体装置的制造方法(II)中，具有在半导体装置制造用粘合片的粘合剂层上局部形成多个导电部分的工序(1)；将形成有电极的至少一个半导体元件固着在上述导电部分的规定位置上，以使该半导体元件的没有形成有电极的一侧成为上述粘合剂层侧的工序(2a)；用导线电连接未固着有上述半导体元件的导电部分和上述半导体元件的电极的工序(3)；通过用密封树脂将上述半导体元件等密封，在上述粘合片上形成半导体装置的工序(4)；然后，从半导体装置分离粘合片的工序(5)。
该半导体装置的制造方法(II)例如记载于特开平9-252014号公报中。在图7中示出了由制造方法(II)得到的半导体装置的一个例子。该半导体装置的制造方法(II)中，首先在作为基体材料的粘合片30(粘合剂层31)上贴金属箔，并对该金属箔进行蚀刻，目的在于在规定部分保留金属箔(工序(1))。然后，在具有与半导体元件1同等大小的金属箔4a(裸片焊垫)上使用粘合剂2固着半导体元件1(工序(2))。进而，用导线6进行半导体元件1和金属箔4b的电接合(工序(3))。然后，用金属模并使用密封树脂5进行传递模塑(工序(4))，最后由基体材料3分离成形的密封树脂(工序(5))而完成半导体元件的封装。
其它的无引线结构的半导体装置的制造方法(III)，具有在半导体装置制造用粘合片的粘合剂层上局部形成多个导电部分的工序(1)；将形成有电极的至少一个半导体元件固着在上述粘合剂层上，以使该半导体元件的没有形成有电极的一侧成为上述粘合剂层侧的工序(2b)；用导线电连接上述多个导电部分和上述半导体元件的电极的工序(3)；通过用密封树脂将上述半导体元件等密封，在上述粘合片上形成半导体装置的工序(4)；然后，从半导体装置分离粘合片的工序(5)。
该半导体装置的制造方法(III)记载于专利申请2002-217680号中。
下面，参考附图对本发明的半导体装置的制造方法(III)的实施方式进行具体说明。首先，说明由制造方法(III)得到的半导体装置的结构。在图8A和8B中，示出了该半导体装置的截面图。
为了使半导体元件10与导电部分40电连接，用导线60对此进行连接。在半导体元件10上，在上侧形成有电极(未图示)。为了使半导体元件10和导线60等免遭外部环境的破坏，用密封树脂5进行密封。另外，半导体元件10、导电部分40的下面被暴露在用密封树脂50成形的树脂表面上，且半导体元件10的没有形成有电极的一侧和导电部分40的未与导线连接的一侧形成在同一面上。如上所述，在本发明的半导体装置中，构成了不具有裸片焊垫或半导体元件固着用的粘合剂层的结构。
还有，后面详述了图8A和8B的不同点，而简单地说其不同点是，在图8A中导电部分40的侧面46是露出的结构，与此相反，在图8B中导电部分40的侧面46被埋入于密封树脂50中。
在以往的半导体装置中，裸片焊垫的厚度大致为100-200μm，半导体元件的固着用粘合剂层的厚度大致为10-50μm。因此，当半导体元件的厚度和覆盖在半导体元件上的密封树脂的厚度相同时，根据本发明的半导体装置，则可以实现厚度为110-250μm的薄层化。作为半导体装置的构造例子，如由制造方法(II)得到的半导体装置(图7)，在电路基板上安装半导体装置的电极位于半导体装置的下侧的类型的半导体装置中，其厚度T1大致为300-700μm，从而由本发明的薄层化效果造成的影响非常大。
接着，在图9A-9H中示出了本发明半导体装置的制造方法的各工序(1)-(5)的示意例。
首先，对于在具有基体材料层32和粘合剂层31的粘合片30的该粘合剂层上局部形成多个导电部分40的工序(1)进行说明。形成上述导电部分40的工序(1)没有特别的限制，可以采用各种方法。例如，如图9A中所示，在粘合片30的粘合剂层31上，粘贴金属箔41。然后，如图9B中所示，可以通过使用通常采用的光刻法的图案蚀刻法形成导电部分40。金属箔41没有特别地限制，通常可以使用在半导体领域使用的材料，例如，可以使用铜箔、铜-镍合金箔、Fe-镍合金箔、Fe-镍-钴合金箔等。还有，可以根据需要事先对金属箔41和粘合剂层31相接合的面42进行适于向基板等安装半导体装置时的实施方式的表面处理。
图10是形成上述导电部分40时的导电部分40的配置俯视模式图。导电部分40可根据半导体元件10的电极数形成多个，且多个导电部分40可以用电解镀用的镀覆导线47实现电接通。图9B是在图10中用虚线表示的线a-b部分的截面图。
接着，进行将形成有电极的至少一个该半导体元件10固着在上述粘合剂层31上的工序(2b)，使该半导体元件10的没有形成有电极的一侧成为上述粘合剂层31侧。另外，还进行用导线6电连接上述多个导电部分40和上述半导体元件10的电极的工序(3)。这些工序(2b)、(3)示于图9E中。
还有，在工序(2b)之前，可以使用上述镀覆导线47，在导电部分40的表面44上实施最适于引线接合的电解镀。通常进行Ni镀覆，在其上进行金镀覆，但是并不限于这些。
接着，进行用密封树脂50将上述半导体元件10等密封并在上述粘合片30的粘合剂层31上形成半导体装置的工序(4)。利用密封树脂50的密封，可以用通常的传递模塑法，使用金属模进行。该工序(4)示于图9F中。还有，在传递模塑后，可以根据需要进行模压树脂的后固化加热。后固化加热既可以在下述的分离粘合片30的工序(5)之前进行，也可以在之后进行。
接着，实施从半导体装置分离粘合片30的工序(5)。由此获得半导体装置90。该工序(5)示于图9G中。还有，当使用上述镀覆导线47时，切断镀覆导线部分，从而获得半导体装置(图9H)。由此得到的半导体装置如图8A所示。还有，镀覆导线47的切断既可以在分离粘合片30之前进行，也可以在分离粘合片30之后进行。
本发明的半导体装置的制造可以按照图9A、9B、9E、9F、9G、9H的顺序进行，但是如在图9C中所示，优选在工序(2b)之前，预先在固着半导体元件10的区域的粘合剂层31上形成保护层45。通过附设上述保护层45，可具备能防止半导体元件10和粘合剂层31之间附着杂质的优点。
例如，上述保护层45的形成可以通过金属箔41的图案蚀刻来进行。在上述图9A-9H中的上述工序(1)中的图9B中，在金属箔41的图案蚀刻工序中，固着半导体元件10的区域的金属箔41也通过蚀刻被除去，但是如图9C所示，在金属箔41的图案蚀刻的工序中，可以保留固着半导体元件10的区域的金属箔45，而不用蚀刻除去，从而可以把金属箔45作为保护层。然后，在工序(2b)时剥离金属箔45(图9D)。对保护层45(金属箔45)的剥离方法没有特别限定，可以采用各种方法。之后可以与上述相同地通过图9E至9F获得半导体装置90。
还有，在电解镀导电部分40的表面44时，保护固着半导体元件10的区域的金属箔45既可以与镀覆导线电接通，以进行电解镀，另外也可以不与镀覆导线接通。当在电解镀工序中不赋予电位时，由于金属箔45的成分有可能在镀覆液中洗提出，所以优选进行镀覆。
另外，在工序(2b)以前，作为形成上述保护层45的方法，除了上述蚀刻法，也可以采用在图9B之后在粘合剂层31上印制保护被膜的方法等。但是，由于在该方法中增加了工序数量，所以保护层45的形成优选使用由上述蚀刻法形成金属箔45的方法。
在图9A-9H、以及图10的说明中，作为对导电部分40的表面44进行镀覆处理的方法，说明了使用电解镀法的情况，但是镀覆处理不限于电解镀，也可以采用无电解镀法。在无电解镀法中不需要上述的镀覆导线47，导电部分40未电连接，各个独立存在。因此在工序(4)的模压树脂形成后，不需要切断镀覆导线。由此得到的半导体装置如图8B所示。还有，无电解镀法中，对于通常不需要形成镀覆保护模的部分，有必要预先进行保护，以避免被实施镀覆，因增加了工序数，还是优选电解镀法。
在上述图9A-9H中示出的半导体装置的制造方法中，示出了作为在粘合片30的粘合剂层31上局部形成多个导电部分的工序(1)，在粘合剂层31上粘贴金属箔41的方法，作为向粘合剂层31上形成金属箔的方法，也可以采用镀覆法。例如，可以在粘合剂层31的整个表面上用无电解镀薄薄地镀覆金属(通常无电解镀厚度为约0.05-3μm)，然后，用电解镀形成所需厚度的金属箔，从而可以形成金属箔41。另外，也可以在粘合剂层31上，用蒸镀法或喷镀法形成薄金属层(通常为约0.05-3μm的厚度)，然后，通过电解镀形成所需厚度的金属箔，由此形成金属箔41。
另外，可以在粘合片30的粘合剂层31上形成抗蚀剂层，使用通常的光刻法，并使用所需形状和数量的导电部分形状的曝光掩膜，经过曝光、显影，在抗蚀剂层上形成所需形状和数量的导电部分形状。这时，形成曝光掩膜时，作成可用镀覆导线进行电连接，以使各导电部分40可以进行电解镀。然后，通过无电解镀进行薄层镀覆(通常无电解镀厚度为约0.05-3μm)，在无电解镀后，剥离抗蚀剂层，使用上述的镀覆导线，进行电解镀直至达到所需要的厚度，从而可以形成导电部分40。
另外，也可以采用如下的方法，即，在粘合片30的粘合剂层31上，用蒸镀法或喷镀法形成薄金属层41(通常为约0.05-3μm的厚度)，在该金属层41上形成感光性抗蚀剂层，之后通过通常的光刻法，并使用所需形状和数量的导电部分形状的曝光掩膜，经过曝光、显影，在抗蚀剂层上形成所需形状和数量的导电部分形状。这时，各导电部分40用镀覆导线进行电连接，以便可以进行电解镀。然后，使用镀覆导线进行电解镀直至达到所需要的厚度，并剥离抗蚀剂层，通过软蚀刻除去由蒸镀法或喷镀法形成的薄金属层41，从而获得导电部分43。在该方法中也可以在粘合片30的粘合剂层31上粘贴三井金属矿业(株)制的商品名为MicroThin等的薄铜箔(三井金属矿业(株)制，就铜箔而言厚度为3μm)，并以此代替通过蒸镀法或喷镀法获得非常薄的金属层41的方法。
另外，作为在粘合片30的粘合剂层31上局部形成多个导电部分的工序(1)，在图11A-11H中示出了用冲压加工法形成导电部分40的方法。图11A、11B、11D、11G是在粘合剂层31上在工序(2b)以前不形成保护层时的例子，图11A、11C、11E、11F、11H是在粘合剂层31上在工序(2b)以前形成保护层时的例子。
首先在图11A中，在工程薄膜70上粘贴金属箔41。然后，在图11B、11C中将金属箔41冲压加工成规定的图案。然后，在图11D、11E中在粘合片30的粘合剂层31上粘贴金属箔41侧。之后，剥离工程薄膜70，形成导电部分40(图11G、11H)。还有，在图11F中示出的金属箔45是在工序(2b)以前用于保护导体元件的固着区域的保护层。
作为工程薄膜70，为了在冲压加工后，将导电部分40和金属箔45转印在粘合片30上，优选具有弱粘合性的粘合片或者通过加热、电子射线、紫外线等可降低粘合性的粘合片。特别是在进行精细加工时由于接合面积变小，优选在加工时具有强粘合性而转印时呈弱粘合性的材料。作为这种粘合片，可以举例为加热发泡剥离带[日东电工(株)制：商品名リバァルファ]、紫外线固化型粘合片[日东电工(株)制：ェレップホルダ一]等。
为了便于理解，以半导体元件为1个的情况为例，说明上述本发明的半导体装置的制造方法，但是本发明半导体装置的制造方法中，实用的是制造多个单元的半导体元件。将例子示于图12A和12B中。图12A是表示粘合片30的俯视模式图。在粘合片30的上面，把固着一个半导体元件的区域及在其周围形成的导电部分作为一个块80表示，该块80在支撑体表面上形成为多个格子状。另一方面，图12B是上述一个块80的放大图。在固着半导体元件的区域81的周围形成有所需数量的导电部分40。
在图12A中，例如，粘合片的宽(W1)为500mm，在该例子中通过通常的光刻工序和金属箔蚀刻装置可获得连续卷绕为滚筒状的多个块80。可将由此得到的宽500mm的粘合片30适时切割为在接下来的半导体元件的固着工序(图12B)、引线接合工序(3)、利用传递模塑法等的树脂密封工序(4)中所需要的块数使用。如上所述用传递模塑法将多个半导体元件树脂密封时，在树脂模压后，切割为规定尺寸，获得半导体装置。
(实施例)
下面，根据本发明的实施例，进行更加具体的说明。在以下，“份”意味着“重量份”。
实施例1
将30份丙烯腈丁二烯橡胶(日本ゼォン(株)制，Nipol1072J)、65份双酚A型环氧树脂(日本环氧树脂(株)制，ェピコ-ト828；环氧当量190g/eq)、5份咪唑(四国化成(株)制，C11Z)混合，并溶解于MEK溶剂，浓度为35重量％，从而制作粘合剂溶液。将该粘合剂溶液涂敷在作为基体材料薄膜的厚35μm的铜箔上，然后在150℃下使其干燥3分钟，形成粘合剂厚度为10μm的粘合剂层，作成粘合片。
实施例2
将24份丙烯腈丁二烯橡胶(日本ゼォン(株)制，Nipol1072J)、65份双酚A型环氧树脂(日本环氧树脂(株)制，ェピコ-ト1002；环氧当量650g/eq)、10份酚醛树脂(荒川化学(株)制，P-180)、1份三苯基膦(北兴化成(株)制，TPP)混合，并溶解于MEK溶剂，浓度为35重量％，从而制作粘合剂溶液。将该粘合剂溶液涂敷在作为基体材料薄膜的厚35μm的铜箔上，然后在150℃下使其干燥3分钟，形成粘合剂厚度为10μm的粘合剂层，作成粘合片。
比较例1
将70份丙烯腈丁二烯橡胶(日本ゼォン(株)制，Nipol1072J)、28份双酚A型环氧树脂(日本环氧树脂(株)制，ェピコ-ト828；环氧当量190g/eq)、2份咪唑(四国化成(株)制，C11Z)混合，并溶解于MEK溶剂，浓度为35重量％，从而制作粘合剂溶液。将该粘合剂溶液涂敷在作为基体材料薄膜的厚35μm的铜箔上，然后在150℃下使其干燥3分钟，形成粘合剂厚度为10μm的粘合剂层，作成粘合片。
比较例2
将硅酮类粘合剂(东レダゥコ-ニング制SD-4587L)涂敷在作为基体材料薄膜的厚35μm的铜箔上，然后在150℃下使其干燥3分钟，形成粘合剂厚度为5μm的粘合剂层，作成粘合片。
对于上述的实施例1-2和比较例1-2的粘合片，用以下的方法，对拉伸储藏弹性模数、硅氧烷类气体产生量、残余浆料性进行评价。其结果如表1中所示。
[拉伸储藏弹性模数测量方法]
向进行了脱模处理的剥离衬板上进行涂敷，使粘合剂层厚为200μm，从而只得到粘合剂层。将该粘合剂层在150℃下置于烘箱中1小时，然后使用レォメトリックス社制的粘弹性光谱测量仪(RDS-II)，在频率1赫兹的条件下测量200℃下的拉伸储藏弹性模数。
[硅氧烷类气体产生量]
将各粘合片在200℃下加热30分钟，用GC-MS对产生的硅氧烷类气体进行定量。
[残余浆料性]
在端子部分排列有4个×4个边长为16Pin类型的QFN的铜制引线框(Cu-L/F)的外部焊垫侧，在100℃×0.5MPa×50mm/min的层压条件下粘贴各粘合片。接着，对于实施例中的热固化性粘合片，在150℃×1hr的条件下进行固化。另外用环氧类密封树脂(日东电工制HC-300)，将这些用模塑机(TOWA制Model-Y-serise)在175℃下预热40秒，并在喷射时间为11.5秒、固化时间120秒的条件下进行模压，然后剥离粘合片，并确认在密封树脂表面和引线框表面有无残余浆料。
表1
实施例1 实施例2 比较例1 比较例2
200℃下的弹性模数(MPa)  2.0   1.6   0.5   0.2
硅氧烷类气体产生量(ng/g)  7   10   7   1.5×104
残余浆料性  无  无   产生   无
由表1可知，本发明的实施例1-2对于密封树脂和引线框具有良好脱模性，也没有看到残余浆料。另外，由于是非硅酮类的材料，所以硅氧烷类的气体产生量也极少。与此相反，当在不同于本发明的比较例1中示出的橡胶成分多时，固化后的弹性模数也低，产生残余浆料。另外，当使用在比较例2中示出的硅酮类粘合剂时，虽然相对于密封树脂和引线框具有良好脱模性，也没有看到残余浆料，但是硅氧烷类气体产生量极多，因对表面的硅酮污染、对外部焊垫侧的硅酮成分的转印等，在接合引线时和软钎焊时引起金属接合不良的可能性较大。
在本发明的详细说明中所提出的具体的实施方式或者实施例只用于更清楚地解释本发明的技术内容，并不仅限于这种具体例子，而且不应该狭义地进行解释，可以在本发明的范围内，进行各种各样的改变后实施。

Claims (3)

1.一种半导体装置制造用粘合片，在具有基体材料层和粘合剂层的粘合片中的该粘合剂层上，至少用密封树脂对与导体相连的半导体元件进行密封的半导体装置的制造工序中使用，其特征在于，所述粘合片的粘合剂层中含有橡胶成分和环氧树脂成分，且橡胶成分在粘合剂层的有机物中所占比例为5-40重量％。
2.如权利要求1所述的半导体装置制造用粘合片，其中，所述环氧树脂成分的环氧当量在1000g/eq以下。
3.如权利要求1或2所述的半导体装置制造用粘合片，其中，所述粘合剂层在固化后的、200℃下的拉伸储藏弹性模数在1MPa以上。
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CN100559560C (zh) 2009-11-11
TWI375998B (en) 2012-11-01
US20050046021A1 (en) 2005-03-03

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