CN1574397A - 垂直金属氧化物半导体晶体管 - Google Patents
垂直金属氧化物半导体晶体管 Download PDFInfo
- Publication number
- CN1574397A CN1574397A CNA2004100616880A CN200410061688A CN1574397A CN 1574397 A CN1574397 A CN 1574397A CN A2004100616880 A CNA2004100616880 A CN A2004100616880A CN 200410061688 A CN200410061688 A CN 200410061688A CN 1574397 A CN1574397 A CN 1574397A
- Authority
- CN
- China
- Prior art keywords
- silicon trench
- high concentration
- mos transistor
- conduction type
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 89
- 239000010703 silicon Substances 0.000 claims description 89
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 88
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000007774 longterm Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000006731 degradation reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 230000007850 degeneration Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP180111/03 | 2003-06-24 | ||
JP180111/2003 | 2003-06-24 | ||
JP2003180111A JP4398185B2 (ja) | 2003-06-24 | 2003-06-24 | 縦形mosトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1574397A true CN1574397A (zh) | 2005-02-02 |
CN100524818C CN100524818C (zh) | 2009-08-05 |
Family
ID=33535117
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100616880A Expired - Fee Related CN100524818C (zh) | 2003-06-24 | 2004-06-24 | 垂直金属氧化物半导体晶体管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7034359B2 (zh) |
JP (1) | JP4398185B2 (zh) |
CN (1) | CN100524818C (zh) |
TW (1) | TWI338368B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102412249A (zh) * | 2011-10-13 | 2012-04-11 | 上海华虹Nec电子有限公司 | 降低闩锁效应的功率器件结构及其制造方法 |
CN103325685A (zh) * | 2012-03-23 | 2013-09-25 | 无锡维赛半导体有限公司 | 深沟槽功率半导体场效应晶体管及其制作方法 |
CN104241355A (zh) * | 2013-06-09 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
JP2020065021A (ja) * | 2018-10-19 | 2020-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN108538910B (zh) * | 2018-02-13 | 2020-08-14 | 株洲中车时代电气股份有限公司 | 具有复合栅的igbt芯片 |
CN112614879A (zh) * | 2020-11-27 | 2021-04-06 | 株洲中车时代半导体有限公司 | 碳化硅器件的元胞结构、其制备方法及碳化硅器件 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4913336B2 (ja) * | 2004-09-28 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4414863B2 (ja) * | 2004-10-29 | 2010-02-10 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
US7364997B2 (en) * | 2005-07-07 | 2008-04-29 | Micron Technology, Inc. | Methods of forming integrated circuitry and methods of forming local interconnects |
US7602015B2 (en) * | 2005-08-25 | 2009-10-13 | International Rectifier Corporation | Process to control semiconductor wafer yield |
DE102005041108B3 (de) * | 2005-08-30 | 2007-05-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines Trench-Transistors und Trench-Transistor |
US8384150B2 (en) | 2005-11-29 | 2013-02-26 | Rohm Co., Ltd. | Vertical double diffused MOS transistor with a trench gate structure |
JP2007208073A (ja) * | 2006-02-02 | 2007-08-16 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
DE102006046853B4 (de) * | 2006-10-02 | 2010-01-07 | Infineon Technologies Austria Ag | Randkonstruktion für ein Halbleiterbauelement und Verfahren zur Herstellung derselben |
KR100832718B1 (ko) * | 2006-12-27 | 2008-05-28 | 동부일렉트로닉스 주식회사 | 트랜치 게이트 모스 소자 및 그 제조 방법 |
US7648915B2 (en) * | 2007-01-12 | 2010-01-19 | Micron Technology, Inc. | Methods of forming semiconductor constructions, and methods of recessing materials within openings |
JP5604029B2 (ja) * | 2007-12-04 | 2014-10-08 | ローム株式会社 | 半導体装置およびその製造方法 |
JP4840370B2 (ja) * | 2008-01-16 | 2011-12-21 | トヨタ自動車株式会社 | 半導体装置とその半導体装置を備えている給電装置の駆動方法 |
US8610204B2 (en) * | 2011-03-15 | 2013-12-17 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
US8816715B2 (en) * | 2011-05-12 | 2014-08-26 | Nanya Technology Corp. | MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test |
JP5849882B2 (ja) * | 2011-09-27 | 2016-02-03 | 株式会社デンソー | 縦型半導体素子を備えた半導体装置 |
TWI470802B (zh) | 2011-12-21 | 2015-01-21 | Ind Tech Res Inst | 溝槽式金氧半導體電晶體元件及其製造方法 |
JP6135181B2 (ja) * | 2013-02-26 | 2017-05-31 | サンケン電気株式会社 | 半導体装置 |
TWI572040B (zh) * | 2013-06-21 | 2017-02-21 | 竹懋科技股份有限公司 | 溝槽型-垂直式雙擴散金氧半電晶體結構及其製造方法 |
DE102013108518B4 (de) * | 2013-08-07 | 2016-11-24 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zum herstellen derselben |
US9484404B2 (en) * | 2014-01-29 | 2016-11-01 | Stmicroelectronics S.R.L. | Electronic device of vertical MOS type with termination trenches having variable depth |
KR102150942B1 (ko) | 2014-12-01 | 2020-09-03 | 삼성전자주식회사 | 핀펫을 구비하는 반도체 장치 |
US10355132B2 (en) * | 2017-03-20 | 2019-07-16 | North Carolina State University | Power MOSFETs with superior high frequency figure-of-merit |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0746030B1 (en) * | 1995-06-02 | 2001-11-21 | SILICONIX Incorporated | Trench-gated power MOSFET with protective diodes in a periodically repeating pattern |
JP3410286B2 (ja) * | 1996-04-01 | 2003-05-26 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP3257394B2 (ja) * | 1996-04-04 | 2002-02-18 | 株式会社日立製作所 | 電圧駆動型半導体装置 |
JP2001024193A (ja) * | 1999-07-13 | 2001-01-26 | Hitachi Ltd | トレンチゲート型半導体装置およびその製造方法 |
JP2001274399A (ja) * | 2000-03-23 | 2001-10-05 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP4171268B2 (ja) * | 2001-09-25 | 2008-10-22 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
JP4171286B2 (ja) * | 2002-11-07 | 2008-10-22 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
-
2003
- 2003-06-24 JP JP2003180111A patent/JP4398185B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-15 US US10/867,906 patent/US7034359B2/en not_active Expired - Lifetime
- 2004-06-18 TW TW093117747A patent/TWI338368B/zh not_active IP Right Cessation
- 2004-06-24 CN CNB2004100616880A patent/CN100524818C/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102412249A (zh) * | 2011-10-13 | 2012-04-11 | 上海华虹Nec电子有限公司 | 降低闩锁效应的功率器件结构及其制造方法 |
CN102412249B (zh) * | 2011-10-13 | 2014-10-08 | 上海华虹宏力半导体制造有限公司 | 降低闩锁效应的功率器件结构及其制造方法 |
CN103325685A (zh) * | 2012-03-23 | 2013-09-25 | 无锡维赛半导体有限公司 | 深沟槽功率半导体场效应晶体管及其制作方法 |
CN104241355A (zh) * | 2013-06-09 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN104241355B (zh) * | 2013-06-09 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
CN108538910B (zh) * | 2018-02-13 | 2020-08-14 | 株洲中车时代电气股份有限公司 | 具有复合栅的igbt芯片 |
JP2020065021A (ja) * | 2018-10-19 | 2020-04-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP7144277B2 (ja) | 2018-10-19 | 2022-09-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN112614879A (zh) * | 2020-11-27 | 2021-04-06 | 株洲中车时代半导体有限公司 | 碳化硅器件的元胞结构、其制备方法及碳化硅器件 |
Also Published As
Publication number | Publication date |
---|---|
US7034359B2 (en) | 2006-04-25 |
TW200505025A (en) | 2005-02-01 |
TWI338368B (en) | 2011-03-01 |
JP4398185B2 (ja) | 2010-01-13 |
US20040262677A1 (en) | 2004-12-30 |
JP2005019558A (ja) | 2005-01-20 |
CN100524818C (zh) | 2009-08-05 |
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TR01 | Transfer of patent right |
Effective date of registration: 20160316 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
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Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20090805 Termination date: 20200624 |