CN1531083A - 半导体保护元件、半导体器件及其制造方法 - Google Patents
半导体保护元件、半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1531083A CN1531083A CNA200410028496XA CN200410028496A CN1531083A CN 1531083 A CN1531083 A CN 1531083A CN A200410028496X A CNA200410028496X A CN A200410028496XA CN 200410028496 A CN200410028496 A CN 200410028496A CN 1531083 A CN1531083 A CN 1531083A
- Authority
- CN
- China
- Prior art keywords
- area
- zone
- exposed region
- silicide layer
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 494
- 230000001681 protective effect Effects 0.000 title claims description 208
- 238000000034 method Methods 0.000 title claims description 82
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 205
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 205
- 239000012535 impurity Substances 0.000 claims abstract description 161
- 239000000758 substrate Substances 0.000 claims abstract description 156
- 230000015572 biosynthetic process Effects 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 abstract description 59
- 230000020169 heat generation Effects 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000011084 recovery Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
Images
Classifications
-
- D—TEXTILES; PAPER
- D05—SEWING; EMBROIDERING; TUFTING
- D05B—SEWING
- D05B3/00—Sewing apparatus or machines with mechanism for lateral movement of the needle or the work or both for making ornamental pattern seams, for sewing buttonholes, for reinforcing openings, or for fastening articles, e.g. buttons, by sewing
- D05B3/02—Sewing apparatus or machines with mechanism for lateral movement of the needle or the work or both for making ornamental pattern seams, for sewing buttonholes, for reinforcing openings, or for fastening articles, e.g. buttons, by sewing with mechanisms for needle-bar movement
- D05B3/025—Sewing apparatus or machines with mechanism for lateral movement of the needle or the work or both for making ornamental pattern seams, for sewing buttonholes, for reinforcing openings, or for fastening articles, e.g. buttons, by sewing with mechanisms for needle-bar movement with a pair of needles mounted on the needle-bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- D—TEXTILES; PAPER
- D05—SEWING; EMBROIDERING; TUFTING
- D05B—SEWING
- D05B55/00—Needle holders; Needle bars
- D05B55/14—Needle-bar drives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Abstract
Description
Claims (56)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003066161A JP4390465B2 (ja) | 2003-03-12 | 2003-03-12 | 抵抗素子、半導体装置及びそれらの製造方法 |
JP066161/2003 | 2003-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1531083A true CN1531083A (zh) | 2004-09-22 |
CN100578777C CN100578777C (zh) | 2010-01-06 |
Family
ID=32767931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200410028496A Expired - Fee Related CN100578777C (zh) | 2003-03-12 | 2004-03-12 | 半导体保护元件、半导体器件及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7087999B2 (zh) |
EP (1) | EP1458033A3 (zh) |
JP (1) | JP4390465B2 (zh) |
KR (1) | KR100633192B1 (zh) |
CN (1) | CN100578777C (zh) |
TW (1) | TWI253176B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101154657B (zh) * | 2006-09-25 | 2010-04-07 | 联詠科技股份有限公司 | 静电放电防护电路的布局结构及其制造方法 |
CN103094277A (zh) * | 2011-11-04 | 2013-05-08 | 瑞萨电子株式会社 | 半导体装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004004585A1 (de) * | 2004-01-29 | 2005-08-18 | Infineon Technologies Ag | Integrierter Widerstand und Herstellungsverfahren |
JP2006165481A (ja) * | 2004-12-10 | 2006-06-22 | Toshiba Corp | 半導体装置 |
JP5078312B2 (ja) * | 2005-10-19 | 2012-11-21 | セイコーインスツル株式会社 | 半導体集積回路装置およびその製造方法 |
JP2007142041A (ja) * | 2005-11-16 | 2007-06-07 | Toshiba Corp | 半導体装置 |
US7465995B2 (en) * | 2006-01-10 | 2008-12-16 | Taiwan Semiconductor Manufacturing Co. | Resistor structure for ESD protection circuits |
JP4826281B2 (ja) * | 2006-02-22 | 2011-11-30 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP5210414B2 (ja) * | 2011-04-26 | 2013-06-12 | シャープ株式会社 | 半導体装置 |
US11430749B2 (en) * | 2018-10-31 | 2022-08-30 | Infineon Technologies Ag | ESD protection in an electronic device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208472A (en) * | 1988-05-13 | 1993-05-04 | Industrial Technology Research Institute | Double spacer salicide MOS device and method |
JP2773220B2 (ja) * | 1989-04-13 | 1998-07-09 | セイコーエプソン株式会社 | 半導体装置 |
JP2839375B2 (ja) | 1991-01-14 | 1998-12-16 | 三菱電機株式会社 | 半導体集積回路装置 |
US5838033A (en) * | 1993-09-08 | 1998-11-17 | Lucent Technologies Inc. | Integrated circuit with gate conductor defined resistor |
JP2737629B2 (ja) | 1993-12-28 | 1998-04-08 | 日本電気株式会社 | Cmos構成の出力回路を有する半導体装置 |
US5637902A (en) * | 1996-01-16 | 1997-06-10 | Vlsi Technology, Inc. | N-well resistor as a ballast resistor for output MOSFET |
JPH1098186A (ja) | 1996-09-20 | 1998-04-14 | Toshiba Corp | 半導体装置及びその製造方法 |
US5744395A (en) * | 1996-10-16 | 1998-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure |
US5702972A (en) * | 1997-01-27 | 1997-12-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of fabricating MOSFET devices |
JP2000156469A (ja) | 1998-09-18 | 2000-06-06 | Seiko Epson Corp | 半導体装置 |
US6265252B1 (en) * | 1999-05-03 | 2001-07-24 | Vlsi Technology, Inc. | Reducing the formation of electrical leakage pathways during manufacture of an electronic device |
US6531745B1 (en) * | 1999-12-30 | 2003-03-11 | Intel Corporation | Electro static discharge protection n-well ballast resistor device |
JP3467689B2 (ja) * | 2000-05-31 | 2003-11-17 | セイコーエプソン株式会社 | 静電気保護回路が内蔵された半導体装置 |
TW522542B (en) * | 2000-11-09 | 2003-03-01 | United Microelectronics Corp | Electrostatic discharge device structure |
US6534402B1 (en) * | 2001-11-01 | 2003-03-18 | Winbond Electronics Corp. | Method of fabricating self-aligned silicide |
-
2003
- 2003-03-12 JP JP2003066161A patent/JP4390465B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-11 TW TW093106445A patent/TWI253176B/zh not_active IP Right Cessation
- 2004-03-11 US US10/796,999 patent/US7087999B2/en not_active Expired - Fee Related
- 2004-03-11 EP EP04005858A patent/EP1458033A3/en not_active Withdrawn
- 2004-03-12 CN CN200410028496A patent/CN100578777C/zh not_active Expired - Fee Related
- 2004-03-12 KR KR1020040016933A patent/KR100633192B1/ko not_active IP Right Cessation
-
2006
- 2006-02-06 US US11/347,265 patent/US7271097B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101154657B (zh) * | 2006-09-25 | 2010-04-07 | 联詠科技股份有限公司 | 静电放电防护电路的布局结构及其制造方法 |
CN103094277A (zh) * | 2011-11-04 | 2013-05-08 | 瑞萨电子株式会社 | 半导体装置 |
CN103094277B (zh) * | 2011-11-04 | 2017-05-03 | 瑞萨电子株式会社 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2004273973A (ja) | 2004-09-30 |
EP1458033A2 (en) | 2004-09-15 |
JP4390465B2 (ja) | 2009-12-24 |
US7087999B2 (en) | 2006-08-08 |
US7271097B2 (en) | 2007-09-18 |
EP1458033A3 (en) | 2005-03-30 |
KR100633192B1 (ko) | 2006-10-12 |
US20060125104A1 (en) | 2006-06-15 |
KR20040081385A (ko) | 2004-09-21 |
TWI253176B (en) | 2006-04-11 |
US20040256681A1 (en) | 2004-12-23 |
TW200425512A (en) | 2004-11-16 |
CN100578777C (zh) | 2010-01-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1187839C (zh) | 半导体装置 | |
CN1277317C (zh) | 功率半导体装置及功率半导体装置的制造方法 | |
CN1135626C (zh) | 半导体器件及其制造方法 | |
CN1199281C (zh) | 半导体装置 | |
CN1320615C (zh) | 半导体器件的制造方法 | |
CN1445838A (zh) | 半导体器件及其制造方法 | |
CN1268003C (zh) | 半导体器件及其制造方法 | |
CN1231978C (zh) | 绝缘栅型半导体装置 | |
CN1841744A (zh) | 具有稳定静电放电保护能力的半导体器件 | |
CN1790743A (zh) | 晶体管及其制造方法 | |
CN1505839A (zh) | 半导体器件 | |
CN1728401A (zh) | 半导体器件及其制造方法 | |
CN1666325A (zh) | 纵向结型场效应晶体管及其制造方法 | |
CN1917231A (zh) | 欧姆电极及制造方法、场效应晶体管及制造方法与半导体装置 | |
CN1449040A (zh) | 半导体集成电路器件及其制造方法 | |
CN1665028A (zh) | 半导体器件 | |
CN1967850A (zh) | 半导体装置 | |
CN1153302C (zh) | 薄膜晶体管 | |
CN1574353A (zh) | 半导体器件及其制造方法 | |
CN1613153A (zh) | 半导体存储装置及其制造方法 | |
CN1531083A (zh) | 半导体保护元件、半导体器件及其制造方法 | |
CN1691355A (zh) | 半导体器件 | |
CN1306615C (zh) | 半导体器件及其制造方法 | |
CN1213473C (zh) | 半导体装置的制造方法 | |
CN1359156A (zh) | Cmos半导体器件及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ACER COMPUTER (CHINA) CO., LTD. Free format text: FORMER OWNER: BEIDA FANGZHENG SCIENCE + TECHNOLOGY COMPUTER SYSTEM CO., LTD., SHANGHAI Effective date: 20101029 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100871 8/F, FANGZHENG BUILDING, ZHONGGUANCUN, NO.298, CHENGFU ROAD, HAIDIANDISTRICT, BEIJING TO: 200001 3/F, NO.168, XIZANG MIDDLE ROAD, HUANGPU DISTRICT, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101103 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100106 Termination date: 20140312 |