JP5210414B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5210414B2 JP5210414B2 JP2011097820A JP2011097820A JP5210414B2 JP 5210414 B2 JP5210414 B2 JP 5210414B2 JP 2011097820 A JP2011097820 A JP 2011097820A JP 2011097820 A JP2011097820 A JP 2011097820A JP 5210414 B2 JP5210414 B2 JP 5210414B2
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- 239000004065 semiconductor Substances 0.000 title claims description 45
- 230000001681 protective effect Effects 0.000 claims description 34
- 229910021332 silicide Inorganic materials 0.000 claims description 34
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 25
- 239000002344 surface layer Substances 0.000 claims description 14
- 230000015556 catabolic process Effects 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 238000000034 method Methods 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 208000024891 symptom Diseases 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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Description
第1のMOSFETが形成される第1領域を有し、
前記第1領域上に、前記第1のMOSFETに第1の保護抵抗回路を接続してなる第1ESD保護素子が形成され、
前記第1のMOSFETは、
第1ウェル上に、第1ゲート絶縁膜を介して形成された第1ゲート電極、及び、
前記第1ゲート電極を挟んで互いに対向するように前記第1ウェルの表層に形成される前記第1ウェルと逆導電型の第1ソース領域及び第1ドレイン領域と、
前記第1ソース領域及び前記第1ドレイン領域と同導電型であって当該第1ソース領域及び当該第1ドレイン領域より低濃度のドリフト領域とを備え、
前記第1のMOSFETの前記ドリフト領域が、前記第1のMOSFETの前記第1ソース領域から前記第1ゲート電極下方に向かって延伸するソース側ドリフト領域と、前記第1のMOSFETの前記第1ドレイン領域から前記第1ゲート電極下方に向かって延伸するドレイン側ドリフト領域に、前記第1のMOSFETの前記第1ゲート電極下方の前記第1ウェルを挟んで分離形成され、
前記第1の保護抵抗回路は、
前記第1ゲート絶縁膜を介して形成された第1ゲート電極、
前記第1ゲート電極を挟んで互いに対向するように前記第1ウェルの表層に分離形成される前記第1ウェルと逆導電型の二つの第1抵抗ドレイン領域、及び、
前記第1抵抗ドレイン領域と同導電型であって当該第1抵抗ドレイン領域より低濃度のドリフト領域を備え、
前記ドリフト領域が、前記第1抵抗ドレイン領域の双方と電気的に接続するように、前記第1ゲート電極下方に形成され、
前記第1ESD保護素子を構成する前記第1のMOSFETの前記ドレイン側ドリフト領域が、前記第1の保護抵抗回路の前記ドリフト領域と接続し、
前記第1のMOSFETより低耐圧の第2のMOSFETが形成される第2領域を有し、
前記第2領域上に、前記第2のMOSFETに第2の保護抵抗回路を接続してなる第2ESD保護素子が形成され、
前記第2のMOSFETは、
第2ウェル上に、第2ゲート絶縁膜を介して形成された第2ゲート電極、及び、前記第2ゲート電極を挟んで互いに対向するように前記第2ウェルの表層に分離形成される前記第2ウェルと逆導電型の第2ソース領域及び第2ドレイン領域を備え、
前記第2の保護抵抗回路は、
前記第2ゲート絶縁膜を介して形成された第2ゲート電極、
前記第2ゲート電極を挟んで互いに対向するように前記第2ウェルの表層に分離形成される前記第2ウェルと逆導電型の二つの第2抵抗ドレイン領域、及び、
前記第2抵抗ドレイン領域と同導電型であって当該第2抵抗ドレイン領域より低濃度の第2のドリフト領域を備え、
前記第2のドリフト領域が、前記第2抵抗ドレイン領域の双方と電気的に接続するように、前記第2ゲート電極下方に形成され、
前記第2のMOSFETにおいて、前記第2ソース領域及び前記第2ドレイン領域の何れかと電気的に接続し、前記第2ゲート電極の下方に向って延伸する、当該第2ソース領域及び当該第2ドレイン領域と同導電型であって当該第2ソース領域及び当該第2ドレイン領域より低濃度のLDD領域が形成されていることを特徴とする。
前記第2の保護抵抗回路の前記第2ゲート電極の上面に形成されたシリサイド層が、前記第2抵抗ドレイン領域の上面に形成されたシリサイド層と、前記第2の保護抵抗回路の前記第2ゲート電極の側壁に沿って形成される絶縁膜を介して電気的に分離されている構成とすることができる。
本発明の一実施形態に係る半導体装置(以降、適宜「本発明装置100」と称す)及び、その製造方法について以下に、詳細に説明する。図1及び図2は本発明装置1のデバイス構造を模式的に示す断面図である。尚、図1及び図2に示される断面図では、適宜、要部が強調して示されており、図面上の各構成部分の寸法比と実際の寸法比とは必ずしも一致するものではない。これは以降に示す断面図について同様とする。
2、3: Pウェル
4: 素子分離膜(STI)
5a〜5d: ドリフト領域
6: 第1のゲート絶縁膜(高耐圧用)
7: 第2のゲート絶縁膜(低耐圧用)
8a〜8d: ゲート電極
9: LDD領域
10a〜10d: 側壁絶縁膜
11a: 第1のソース領域(高濃度ソース領域)
11b: 第1のドレイン領域(高濃度ドレイン領域)
11c: 第2のソース領域(高濃度ソース領域)
11d: 第2のドレイン領域(高濃度ドレイン領域)
12: シリサイド層
13: 層間絶縁膜
14: コンタクトプラグ
15: 金属配線
16: 第1抵抗ドレイン領域
17: 第2抵抗ドレイン領域
21: HV保護素子(高耐圧用の第1のESD保護素子)
22: LV保護素子(低耐圧用の第2のESD保護素子)
23: HVトランジスタ(高耐圧の第1のMOSFET)
24: LVトランジスタ(低耐圧の第2のMOSFET)
25: 第1の保護抵抗回路
26: 第2の保護抵抗回路
31: 犠牲酸化膜
32〜34: レジストパターン
100: 本発明の一実施形態に係る半導体装置(本発明装置)
Claims (5)
- 第1のMOSFETが形成される第1領域を有する半導体装置において、
前記第1領域上に、前記第1のMOSFETに第1の保護抵抗回路を接続してなる第1ESD保護素子が形成され、
前記第1のMOSFETは、
第1ウェル上に、第1ゲート絶縁膜を介して形成された第1ゲート電極、及び、前記第1ゲート電極を挟んで互いに対向するように前記第1ウェルの表層に分離形成される前記第1ウェルと逆導電型の第1ソース領域及び第1ドレイン領域と、
前記第1ソース領域及び前記第1ドレイン領域と同導電型であって当該第1ソース領域及び当該第1ドレイン領域より低濃度のドリフト領域とを備え、
前記第1のMOSFETの前記ドリフト領域が、前記第1のMOSFETの前記第1ソース領域から前記第1ゲート電極下方に向かって延伸するソース側ドリフト領域と、前記第1のMOSFETの前記第1ドレイン領域から前記第1ゲート電極下方に向かって延伸するドレイン側ドリフト領域に、前記第1のMOSFETの前記第1ゲート電極下方の前記第1ウェルを挟んで分離形成され、
前記第1の保護抵抗回路は、
前記第1ゲート絶縁膜を介して形成された第1ゲート電極、
前記第1ゲート電極を挟んで互いに対向するように前記第1ウェルの表層に分離形成される前記第1ウェルと逆導電型の二つの第1抵抗ドレイン領域、及び、
前記第1抵抗ドレイン領域と同導電型であって当該第1抵抗ドレイン領域より低濃度のドリフト領域を備え、
前記ドリフト領域が、前記第1抵抗ドレイン領域の双方と電気的に接続するように、前記第1ゲート電極下方に形成され、
前記第1ESD保護素子を構成する前記第1のMOSFETの前記ドレイン側ドリフト領域が、前記第1の保護抵抗回路の前記ドリフト領域と接続し、
前記第1のMOSFETより低耐圧の第2のMOSFETが形成される第2領域を有し、
前記第2領域上に、前記第2のMOSFETに第2の保護抵抗回路を接続してなる第2ESD保護素子が形成され、
前記第2のMOSFETは、
第2ウェル上に、第2ゲート絶縁膜を介して形成された第2ゲート電極、及び、前記第2ゲート電極を挟んで互いに対向するように前記第2ウェルの表層に分離形成される前記第2ウェルと逆導電型の第2ソース領域及び第2ドレイン領域を備え、
前記第2の保護抵抗回路は、
前記第2ゲート絶縁膜を介して形成された第2ゲート電極、
前記第2ゲート電極を挟んで互いに対向するように前記第2ウェルの表層に分離形成される前記第2ウェルと逆導電型の二つの第2抵抗ドレイン領域、及び、
前記第2抵抗ドレイン領域と同導電型であって当該第2抵抗ドレイン領域より低濃度の第2のドリフト領域を備え、
前記第2のドリフト領域が、前記第2抵抗ドレイン領域の双方と電気的に接続するように、前記第2ゲート電極下方に形成され、
前記第2のMOSFETにおいて、前記第2ソース領域及び前記第2ドレイン領域の何れかと電気的に接続し、前記第2ゲート電極の下方に向って延伸する、当該第2ソース領域及び当該第2ドレイン領域と同導電型であって当該第2ソース領域及び当該第2ドレイン領域より低濃度のLDD領域が形成されていることを特徴とする半導体装置。 - 前記第1のMOSFETの前記第1ゲート電極、及び、前記第1の保護抵抗回路の前記第1ゲート電極が、ポリシリコンで構成されていることを特徴とする請求項1に記載の半導体装置。
- 前記第1の保護抵抗回路の前記第1ゲート電極の上面に形成されたシリサイド層が、前記第1抵抗ドレイン領域の上面に形成されたシリサイド層と、前記第1の保護抵抗回路の前記第1ゲート電極の側壁に沿って形成される絶縁膜を介して電気的に分離されていることを特徴とする請求項2に記載の半導体装置。
- 前記第2ゲート電極が、ポリシリコンで構成され、
前記第2の保護抵抗回路の前記第2ゲート電極の上面に形成されたシリサイド層が、前記第2抵抗ドレイン領域の上面に形成されたシリサイド層と、前記第2の保護抵抗回路の前記第2ゲート電極の側壁に沿って形成される絶縁膜を介して電気的に分離されていることを特徴とする請求項1〜3の何れか一項に記載の半導体装置。 - 前記第1の保護抵抗回路の前記第1ゲート電極には、電圧が印加されないことを特徴とする請求項1〜4の何れか一項に記載の半導体装置。
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US10199496B2 (en) | 2016-03-11 | 2019-02-05 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
US10418480B2 (en) | 2016-03-11 | 2019-09-17 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
US10396166B2 (en) | 2016-03-11 | 2019-08-27 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
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